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AC/DC
u TrueWaveTM
u
u 1.5A
u 5V 25V
u 5V
u
u 160V
u LowRdsON MOS
u 1mA
u DCM/QR/LLC
u 250kHz
u
u 3
u SOP8
²
² USB
²
CoC V5 DoE 2016 6
TrueWaveTM
LowRdsON MOSFET
MOSFET 1.5A
MOSFET
160V 25V
15V
DCM/QR/PSR
LLC
250kHz.
5V 4
RoHs SOP8
Ú·¹ïò
Rev:CFT5S01
FT5S01
FT5S01
Hdrive
Ldrive
Pump
Out CTRL
PMU
TrueWaveTM
VisoS
VS
AGND
VDD
GATE
PGNDVRIR
Analysis
1
2
3
4 5
8
7
6SOP8
GATE
PGND
AGND
VS NC
VR
IR
VDD
PIN
1 GATE MOSFET
2 PGND
3 AGND
4 VS
5 NC
6 VR
7 IR
8 VDD
Ú·¹íò
Ú·¹îò
FT5S01
YY: , 01-99à2001-2099
WW: , 01-52 Week
Z:
VS 160 V
VS +1 to -30*
mA
VDD 25 V
Other PIN -0.3 to VDD+0.3 V
PD 500 mW
Min/Max TJ -40 to 150
Min/Max Tstg -55 to 150
ESDHBM 2500 V
MM 250 V
Note*: Only allow width is 1ms pulse and period is 1s.
VDD VDD 4 25 V
VS VS 150 V
TAMP -20 100
YYWWZ
1 4
58
FT5S01
FT5S01FT5S01
Ta=25
VDD VDD 4 - 25 V
VOL VDD = 12V, Io = -300 mA 0.2 V
VOH VDD = 12V, Io = 300 mA 10 V
T_r VDD = 12V, CL = 1nF 20 nS
T_f VDD = 12V, CL = 1nF 20 nS
VVR VR VDD=5V 1 V
IVR VR 2 mA
VIR IR VDD=5V 1 V
IIR IR 3 mA
VVSBR VS IVS=10uA 160 V
IVSLK VS VS=+150V 5 uA
VSTH VS 0 V
FT5S01
IC
DCM/CCM/CrM
CoC V5 DoE 2016 6
12V
VDD GND
1uF.
4V 5V
VDD
25V.
VS
MOSFET VS
20 .
VS 160V
160V
VR IR VDD
21−
=−
=VDD
IVVDDR
VR
VRVR
31−
=−
=VDD
IVVDDR
IR
IRIR
5V RVR 2K
RIR 1.3K
12V RVR
5.6K RIR 3.6K
4.5V
5V
MOSFET
12V
MOSFET
4.5V
Q1
R2R1
E1
Vout
GND
R3
Sec.
R4
E2
Z1
D1
R5
FT5S01
FT5S01
FT5S01
FT5S01
FT5S01
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