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Mitsuru SatoTOKYO OHKA KOGYO CO., LTD.Advanced Material Development Division 1
TOK Resist & Material Development Status for Immersion Lithography
TOK Resist & Material Development Status for Immersion Lithography
TOK Resist &Material Development Status for Immersion Lithography (January 28, 2004)
Contents
Development Approaches
Imaging Performance
Contamination Study and Resist Screening
Development Roadmap
Summary
TOK Resist &Material Development Status for Immersion Lithography (January 28, 2004)
Development Approaches for Immersion Materials
Cover Material ConceptApplication with Conventional Resist
New Cover Material Development
Non Cover Material ConceptModification of Conventional Resist
New Resist Development
Cover Material ConceptApplication with Conventional Resist
New Cover Material Development
Non Cover Material ConceptModification of Conventional Resist
New Resist Development
TOK Resist &Material Development Status for Immersion Lithography (January 28, 2004)
TOK Cover Material Concept
Prospects+ Protection of Resist Film (Water Uptake, Outgas)+ Less Contamination Effect to Fluid and Lens+ Control of Surface Tension (Fluid Supply and
Removal)+ Stabilization of Process Delay Effect+/- Reflectance ControlConcerns- Additional Coat/Removal Steps for Cover Material
BARC/Substrate
Resist Film
Fluid
Cover Material
TOK Resist &Material Development Status for Immersion Lithography (January 28, 2004)
Feasibility Study on 193nm Immersion Lithography
BARC/Substrate
Resist Film
Fluid
Cover Material
BARC/Substrate
193nm Acrylate Resist
DIW
TSP-3A
In Collaboration with Nikon
Two Beam Interference Exposure(65nm Lines in 130nm Pitch)
Mag.:100k
TOK Resist &Material Development Status for Immersion Lithography (January 28, 2004)
Feasibility Study on 157nm Immersion Lithography
BARC/Substrate
Resist Film
Fluid
Cover Material
BARC/Substrate
157nm Fluoro Resist
Fluorinated Fluid
TSP-5A
Mag.:150k
In Collaboration with Nikon
Two Beam Interference Exposure(65nm Lines in 130nm Pitch)
TOK Resist &Material Development Status for Immersion Lithography (January 28, 2004)
Resist Components DependencyTOK-ILP01
Dry
Wet
213nm Two-beam Interference Exposure (0.81NA)Target: 131nm pitch
TOK-ILP03 TOK-ILP06
BARC/Substrate
193nm Acrylate Resist
DIW
TOK Resist &Material Development Status for Immersion Lithography (January 28, 2004)
Contamination Study ConceptR
esis
tex
.100
nmFl
uid
ex.
500
µmLe
nsStatic Scanning Exposure
TOK Resist &Material Development Status for Immersion Lithography (January 28, 2004)
Contamination StudyR
esis
tex
.100
nmFl
uid
ex.
500
µmLe
ns
Scanning/Exposure
1
2
3
4
Contamination and/or Declaration
Media
BehaviorLens Fluid Resist
Possible Less Less
Possible Possible Possible
Possible Possible Possible
Less Less Possible
Pressure and Temperature: Constant
1
4
2
3
Refractive IndexTransparency
pHConductivity
Impurity Conc.(Gas/Contaminant)
Bubble
ThicknessRoughness
Surface EnergySensitivity
ProfileRmax/Rmin/etc
::
ThicknessRoughness
TransparencySurface Energy
:::
ThicknessRoughness
TransparencySurface Energy
:::
Refractive IndexTransparency
pHConductivity
Impurity Conc.(Gas/Contaminant)
Bubble
ThicknessRoughness
Surface EnergySensitivity
ProfileRmax/Rmin/etc
::
TOK Resist &Material Development Status for Immersion Lithography (January 28, 2004)
Thickness Change Measurement
Fluid
QCM Oscillator Measurement equipment
QCM Cell
O-ring
Cell Body
Quartz CrystalResist FilmSpacer
Cap
Electrode
QCM Cell
Data Analysis Equipment
Acryl Platform
Swel
ling
Swel
ling
Dis
solv
ing
Dis
solv
ing
0 10 20 30 40 50 60
Soaking Time (s)
Unexposed
Exposed
-5
-4
-3
-2
-1
0
1
2
3
4
5
0 10 20 30 40 50 60
Soaking Time (s)∆
T (n
m)
Unexposed
Exposed
COMA Platform
TOK Resist &Material Development Status for Immersion Lithography (January 28, 2004)
Resist Surface AnalysisNon Exposure Post Exposure
RMS: 0.35nm
RMS: 0.38nm
RMS: 0.37nm
RMS: 0.40nm
DrySample PreparationResist: TOK-ILP03PAB: 110°C-90sThickness: 350nmExposure: 193nm Open Frame
30mJ/cm2
(Immersion in DIW: 600s)
AFM MeasurementScan Mode: TappingScan Speed: 1HzScan Area: 3x3mm2
Z Axis: 5nm
Wet
TOK Resist &Material Development Status for Immersion Lithography (January 28, 2004)
Resist Sensitivity Measurement with R-SSS
Resist CoatingResist Coating
PABPAB
PEBPEB
TSP CoatingTSP Coating
Soft BakeSoft Bake
ExposureExposure
TSP RemovalTSP RemovalDevelopmentDevelopment
Soaking (**min)
Cover Material Concept
Resist CoatingResist Coating
PABPAB
PEBPEB
ExposureExposure
DevelopmentDevelopment
Soaking (**min)
Conventional ApproachExposure Latitude Plots
Soak Seq.Dry Seq.
TargetCD
Eop (Soak)Eop (Dry)
“Eop Ratio” =Eop (Soak)
Eop (Dry)
Dry Seq. Soak Seq. Eop Ratio
101.0%
107.7%
Resist
AcrylPlatform
COMAPlatform
Measurement: 130nm 1:1 L/S
TOK Resist &Material Development Status for Immersion Lithography (January 28, 2004)
Dissolution Rate Monitoring Method
Exposure Rmin Rmax tan θ
Dry 4.7 x 10-3 2.4 x 102 9.6
Wet 4.7 x 10-3 2.3 x 102 9.5
0.001
0.01
0.1
1
10
100
1000
0.1 1 10 100
Exposure Energy (mJ/cm²)
Dis
olut
ion
Rat
e (n
m/s
)
Dry
Wet
Sample PreparationResist: TOK-ILP03PAB: 110°C-90sThickness: 350nmExposure: 193nm Open Frame 30mJ/cm2
(Immersion in DIW: 600s)PEB: 110°C-90sDevelopment:NMD-3 2.38%, 23°C-60s
TOK Resist &Material Development Status for Immersion Lithography (January 28, 2004)
Extraction Method with Model ResistResist Formulation• Base Resin: Acrylic ter-polymer• PAG: Triphenylsulfonium perfluorobutanesulfonate
(3.0wt% of Base Resin)• Quencher: Trioctylamine (0.25wt% of Base Resin) • Solvent: Ethyl lactate (EL)
Propylene grycol monomethyl ether acetate (PGMEA)Process Conditions• Substrate: Silicon• Resist PAB: 130°C-90s• Resist Thickness: 200nm• TSP-3A PAB: 90°C-60s• TSP-3A Thickness: 38nm• Exposure: 193nm Open Frame 30mJ/cm2 (58% Area)Sampling• Extraction: DIW 30ml, RT-300s, Post PAB/Exp.
TOK Resist &Material Development Status for Immersion Lithography (January 28, 2004)
Extraction Method Results
SubstrateModel Resist
DIW
Sample
Exposure Non Post
EL UDL UDL
PGMEA UDL UDL
Trioctyl amine (2*10-13) (3*10-13)
(TPS)+ 6*10-12 UDL
(PFBS)- 3*10-11 3*10-11
F- UDL UDL
(Lactic acid)- UDL 1*10-12
(Acetic acid)- 3*10-12 2*10-12
(Formic acid)- 5*10-12 NDUDL: Under the calculated detection limit
Model Resist
Substrate
DIW
TSP-3ASubstrate
Model Resist
DIW
TSP-3A
(mol/cm²)
Non Post Non Post
UDL UDL UDL UDL 2*10-12
UDL UDL UDL UDL 2*10-12
UDL UDL UDL UDL 6*10-13
UDL UDL UDL UDL 2*10-12
UDL UDL UDL UDL 1*10-11
UDL UDL UDL UDL 3*10-12
UDL UDL 1*10-12 UDL 8*10-13
UDL UDL 2*10-12 2*10-12 1*10-12
UDL UDL 5*10-12 3*10-12 2*10-12
CalculatedDetected Limit
TSP-3A TSP-3A / Model Resist
Analysis Methods: GC-MS (Organic Compounds), Ion Chromatography (Organic Acid), Capillary Electrophoresis (Sulfonic Acid)
TOK Resist &Material Development Status for Immersion Lithography (January 28, 2004)
Positive Consideration
The maximum value of 3 x 10-11 mol/cm2 means;
2.7 × 10-10 mole fraction per 30 x 30mm2
Remarks: 300 seconds soaking
In comparison to the NIST Update;
∆n ~ (0.05 – 4) x 10-6 per 10-6 mole fractionJohn H. Burnett, ISMT Immersion Lithography Workshop (July 11, 2003)
Further data collection during exposure and under various conditions are necessary
TOK Resist &Material Development Status for Immersion Lithography (January 28, 2004)
Negative Consideration
The extracted PAG amount of 3 x 10-11 mol/cm2 means over 2 % of the total PAG amount of 1.2 x 10-9
~ 1.2 x (1 x 1 x 200nm) x (3.0 / 103.25) / 562
The extracted amine amount of 3 x 10-13 mol/cm2
means around 0.2 % of the total amine amount of 1.6 x 10-10
~ 1.2 x (1 x 1 x 200nm) x (0.25 / 103.25) / 353 Remarks: resist film density ~ 1.2 g/cm2 and 300 seconds soaking
The cover material application would be recommended in the initial development stage
TOK Resist &Material Development Status for Immersion Lithography (January 28, 2004)
2003 2005 2006
TOK 193nm IL Resist and MaterialDevelopment Roadmap
2004
Feasibility ConfirmationFeasibility Confirmation
γ-Resist
β-Resist
Application PhaseApplication Phase
193nm Initial Resist Screening
TOK-ILP SeriesImaging Evaluation: 2-BIEResist Screening: R-SSS, QCM, DRM New Resist Development for <1.0NA Scanner
Pattern Target: IL (35nm), L/S (65nm), CH (70nm)Process Latitude: Sensitivity, EL, DOF, LER
Resist Optimization for >1.0NA Scanner
Pattern Target: IL (25nm), L/S (45nm), CH (50nm)Process Latitude: Sensitivity, EL, DOF, LERProcess Stability: PCD, PED, Bake Time/Temp., CD Uniformity, Defect Control
QC/Manufacturing Establishment
Quality Control: Metrology, Resist SpecificationScale-up: Manufacturing Flow
Fundamental Evaluation (Contamination Study), Components Research, Resist Process Establishment
Resist Development Program
Cover Material Development Program
Key Research and Development
Proof of Concept of Cover Material
TSP-SeriesProcess Stability: PCD, PED, Bake Time/Temp., CD Uniformity
New Cover Material Development
Process Stability: PCD, PED, Bake Time/Temp., CD Uniformity, Defect Control
ScaleScale--up Stageup Stage
C/N 0610309259
TOK Resist &Material Development Status for Immersion Lithography (January 28, 2004)
Summary
• TOK has currently investigated both (non) cover material concepts
• Several resist screening methods for immersion lithography have been established and are ready for the evaluations with full field scanning tools
• The contamination from resist to fluid in immersion was calculated to be a small impact to the change of water refractive index, however;
further data collection during exposure and the investigation of long term impact to lens are necessary
TOK Resist &Material Development Status for Immersion Lithography (January 28, 2004)
Acknowledgments
TOK will like to thank the Resist Task Force organized by International SEMATECH for their kind support
We will also like to thank tool companies for all expertise discussions
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