Reece - Commissioning the JLab 7.5 GHz Surface Impedance Characterization (SIC) System

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http://www.surfacetreatments.it/thinfilms Commissioning of the JLab Surface Impedance Characterization (SIC) System (Charles Reece - 20') Speaker: Charles Reece - Jefferson Lab, Newport News (VA) USA | Duration: 20 min. Abstract Binping Xiao, Larry Phillips, and Charles Reece A system for making direct calorimetric measurements of the surface resistance at 7.5 GHz of small samples of variously prepared superconducting surfaces has been commissioned at JLab. The flat, 50 mm diameter sample temperature is regulated independently of the balance of the TE011 sapphire-loaded cavity, enabling Rs and Δλ measurements from 2 K to Tc of the sample. Initial operation, limited by available rf power, has extended to Bpk of 18 mT. The calorimeter resolution is better than 10 nΩ, and the sampled surface area is ~ 0.8 cm2. The SIC has been commissioned with a bulk Nb sample, demonstrating excellent agreement with standard BCS characterizations. Initial application to SRF thin films has begun. We are eager to apply it to non-niobium materials. Preparations for a second generation with extended dynamic range have already begun.

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Commissioning the JLab 7.5 GHz Surface Impedance Characterization (SIC) System

Charles Reece

for

Binping Xiao

Oct 4, 2010

Outline• A 7.5 GHz surface impedance characterization system

based on a sapphire-loaded TE011 Nb cavity has been under development at JLab for several years.

• The system provides calorimetric measurements of Rsand ∆λ vs T and Bpk on area < 1 cm2 in the center of 5.0 cm diameter disk sample.

• The system has recently completed initial commissioning and is well suited for characterization of higher Tc candidate films.

• A next generation system capable of measurements approaching Bpk ~160 mT is under development.

Characterization of Potential Materials for SRF Cavities

Surface Characterization : Morphology : SEM, AFM Structure & Orientation : XRD, EBSD, TEMChemistry : XPS, SIMS

RF Characterization : Field- and temperature-dependent SRF properties of

new candidate materials

How to correlate these two?Small flat sample surface characterization (SIC System)

SIC System Design

Calorimeter

Nb cavity

Sapphire rod

Sample under test

)(02 Mff

ikB

PZ ref

refpk

rfs

−++= λωµSurface Impedance:

SIC System Key RF Parameters

Key parameters from Microwave Studio simulation

6

RF Calibration

Sample position tuning sensitivity of TE011 mode.Confirms the mode correspondence with MWS simulation.

7.43

7.44

7.45

7.46

7.47

7.48

7.49

7.5

7.51

7.52

0 0.2 0.4 0.6 0.8 1 1.2

Gap [mm]

Freq

[GH

z]

-30.0±0.5Hz/nm,MWS simulation

-34.4±0.1Hz/nm, measured at 4K

-31±2Hz/nm, measured at room T

SIC System: Characterization of Calorimeter

Sample temperature versus heater power under equilibrium with bath temperature at 2 K,without RF . Solid line is calculation based on standard materials database.

The thermal impedance of the calorimeter determines the envelope of accessible calorimetric heat measurements as a function of sample temperature.

Roughly, 1 mKtemperature increase corresponds to 1 μW @ 2 K and 6 μW @ 9 K.

Apply heat on sample Apply heat on holder

SIC System: Characterization of Calorimeter

Characterization of delta-Tbetween sample and sample holder for standard Cu-Cu interface.

9

(T, Rs, Bpk) Measurement Range of SIC

Present 2.0 K working range

10

(T, Rs, Bpk) Measurement Range of SIC

11

SIC Commissioning Test: Rs vs T for Bulk Nb

Rs for bulk Nb sample brazed to Cu.Solid line is BCS fit.

12

SIC Measurements: ∆λ vs T

Penetration depth temperature dependencefor bulk Nb sample brazed to Cu. Solid line is BCS fit.

13

SIC Measurements: BCS Fit Parameters for Nb-brazed-to-Cu sample

Δ/k Tc = 1.87

Tc = 9.26 K

London penetration depth = 45.5 nm

Coherence length = 102 nm

Mean free path = 571 nm

λ(0) = 26.9 nm

Residual resistance = 1.13 µΩ

14

Summary• SIC measurement capability has been demonstrated

with bulk niobium.

• The resolution of the surface resistance in this system can be as low as 1.2 nΩ at 5 mT peak magnetic field and will be higher with higher fields.

• The maximum peak magnetic field presently attained is 14 mT, limited by RF power and cavity Q.

• Since sample temperature is independent of cavity temperature, the SIC system is ideally suited for characterizing samples of higher-Tc materials.

15

Future of SIC

2nd Generation:

• A CW 200 Watt RF source

seeking

• A higher quality factor cavity

For increased Bpk

design -> draw -> machine -> assemble -> test

• A new calorimetry system

For increase heat dynamic range

design -> draw -> machine -> assemble -> test

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(T, Rs, Bpk) Measurement Range Expected of 2nd Generation SIC System

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(T, Rs, Bpk) Measurement Range Expected of 2nd Generation SIC System

Anticipated 2.0 K working range without Q improvement

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(T, Rs, Bpk) Measurement Range Expected of 2nd Generation SIC System

Anticipated 2.0 K working range without Q improvement

Full 2.0 K working range with Q improvement

Thanks to J. Delayen, S. Dutton, R. Geng, P. Kushnick, F. Marhauser, M. Morrone, J. Nance, J. Ozelis, L. Phillips, T. Powers, H. Wang for their contributions and support during the development of this system.

See Reference:

“Radio Frequency Surface Impedance Characterization System for Superconducting Samples at 7.5 GHz,” B. P. Xiao, C. E. Reece, H. L. Phillips, R. L. Geng, H. Wang, F. Marhauser, and M. J. Kelley, Rev. Sci. Inst. (submitted) (2010).

Authored by Jefferson Science Associates, LLC under U.S. DOE Contract No. DE-AC05-06OR23177.