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分子動力学冬季講習 ポテンシャル 3 共有結合性材料. 東京大学工学系研究科 泉 聡志. 概要. 近年のナノテクノロジーの進歩により、シリコンプロセスやカーボンナノチューブの MD 解析が脚光を浴びている。ここでは、シリコン・炭素系の Stillinger-Waber 、 Tersoff 、 Brenner ポテンシャルをその原理に踏み込んで解説し、応用例をいくつか紹介する。. 講習内容. 共有結合ポテンシャルの概要 ポテンシャルの紹介・微分形等の実践に必要な知識 Stillinger-Waber ポテンシャル (Si) Tersoff ポテンシャル (Si, C) - PowerPoint PPT Presentation
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3
MDStillinger-WaberTersoffBrenner
Stillinger-Waber(Si)Tersoff(Si, C)Brenner(C, H)
sp2,sp3C, Sis, px, py, pz4sp3
()Ab-initio (CP)Tight-BindingOrder-NC.Z.Wang, et al.Tersoff, Stillinger- Waber, Brenner, Pettifor, .Car-Parinello
SiCStillinger-WaberTersoff
Brenner(C-H)Marty(Si-H)(Si-H)
b
Stillinger-Waber(Si)Tersoff(Si, C)Brenner(C, H)
SWrr r cosh1/3=109.47h=cos()(1)(6)
SW
SWcosr r rV3r r cos,,
SW
(16)(18)
SW 5
Diamond struct.Exp.SWT3Lattice constants5.429[]5.4315.432Cohesive energy4.63[eV]4.634.63Elastic constants C11167.0[GPa]161.6142.5C1265.0[GPa]81.675.4C4481.0[GPa]60.369.0Vacancy energy(3-4) [eV]2.823.70Interstitial energy Td(5-6) [eV]5.253.45H(4-5) [eV]6.954.61Bond-centered(4-5) [eV]5.995.86Surface energy (100)1.57[/11 cell]1.4161.367Surface energy (111)1.39[/11 cell]1.1580.957
SW 3
SWSiH. BalamanePhys. Rev. B46(1992), 2250 [7]
SWBrown, Maroudas 1994(Bulatov, Yip 1996)Epitaxy(Gilmer 1992)(Rubia, Gilmer 1995)SiO2(Jiang, Brown 1995)
Stillinger-Waber(Si)Tersoff(Si, C)Brenner(C, H)
Tersoff,g()
120g()Bond-orderg()126
TersoffBCCFCCT2T3)
Tersoff
Tersoff(27)(29)
b1 b10 b 0!!2
Tersoff 5
Diamond struct.Exp.SWT3Lattice constants5.429[]5.4315.432Cohesive energy4.63[eV]4.634.63Elastic constants C11167.0[GPa]161.6142.5C1265.0[GPa]81.675.4C4481.0[GPa]60.369.0Vacancy energy(3-4) [eV]2.823.70Interstitial energy Td(5-6) [eV]5.253.45H(4-5) [eV]6.954.61Bond-centered(4-5) [eV]5.995.86Surface energy (100)1.57[/11 cell]1.4161.367Surface energy (111)1.39[/11 cell]1.1580.957
Tersoff 3
TersoffT2SiH. BalamanePhys. Rev. B46(1992), 2250 [7]
Tersoff(Kitabatake 1993)(Motooka 1993, 2000)(Mizushima, Yip 1994)Nordlund 1998Bond-defect(Marques 2001)Si-H Marty(1995), (1994), (2002)C-H Brenner(1990), (2002)
Tersoff
SPE)TersoffNPT, 1600K
SiH4CVD300K SiH4AVI
MBEMolecular Beam EpitaxyK
10keV Ar impacted to the silicon substrate at 300K
Stillinger-Waber(Si)Tersoff(Si, C)Brenner(C, H)
BrennerTersoffTersoffV=1/2(Vab+Vba)C-C(CH3)2C=C(CH3)2Tersoff
BrennerFCC, HCC, HCH5Tersoff
Brenner6
Diamond struct.Exp.TersoffBrennerLattice constants3.566[]3.563.56Cohesive energy7.35[eV]7.377.32Elastic constants C111081[GPa]1090613(1078*)Elastic constants C12125[GPa]120405(131*)Elastic constants C44579[GPa]640631(680*)Vacancy energy(7.2)[eV] 4.327.4GraphiteExp.TersoffBrennerBond length1.42 []1.461.45Cohesive energy7.38[eV]7.407.38Elastic constants C111060[GPa]12101037Elastic constants C12180[GPa]-190155
BrennerCVD(Brenner 1990)(Harrison 1992)C60(Brenner 1991)(Yamaguchi, Maruyama 1997)
Brenner2002
Brenner(Sinnott 1997)(Shenderova 2000)(Che 1999, Mao 1999, Srivastava 1999)
C60
CNT
CNTNi
CNT
Stillinger-Waber(Si)Tersoff(Si, C)Brenner(C, H)
Tight-BindingTightBindingTBTBO(N2)
Tight-Bindingn(n)ii,
TightBindingHijSlater-Koster
Tight-BindingHi,j
Order-NTbBond Order PotentialDensity MatrixFermi OperatorGlobal Density of StateBOPAbell-Tersoff
AbellEAMFSTersoff
(1)LOCAL
NHOP4-Hops 2-Hops
1/2
[email protected], Comp. Mater. Sci, 12(1998),278 ElsevierHPWGWG http://www.fml.t.u-tokyo.ac.jp/wg-cmd/