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分分分分分分分分分 分分分分分分 3 分分分分分分分 分分分分分分分分分分 分 分分

分子動力学冬季講習 ポテンシャル 3  共有結合性材料

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分子動力学冬季講習 ポテンシャル 3  共有結合性材料. 東京大学工学系研究科 泉 聡志. 概要. 近年のナノテクノロジーの進歩により、シリコンプロセスやカーボンナノチューブの MD 解析が脚光を浴びている。ここでは、シリコン・炭素系の Stillinger-Waber 、 Tersoff 、 Brenner ポテンシャルをその原理に踏み込んで解説し、応用例をいくつか紹介する。. 講習内容. 共有結合ポテンシャルの概要 ポテンシャルの紹介・微分形等の実践に必要な知識 Stillinger-Waber ポテンシャル (Si) Tersoff ポテンシャル (Si, C) - PowerPoint PPT Presentation

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  • 3

  • MDStillinger-WaberTersoffBrenner

  • Stillinger-Waber(Si)Tersoff(Si, C)Brenner(C, H)

  • sp2,sp3C, Sis, px, py, pz4sp3

  • ()Ab-initio (CP)Tight-BindingOrder-NC.Z.Wang, et al.Tersoff, Stillinger- Waber, Brenner, Pettifor, .Car-Parinello

  • SiCStillinger-WaberTersoff

    Brenner(C-H)Marty(Si-H)(Si-H)

  • b

  • Stillinger-Waber(Si)Tersoff(Si, C)Brenner(C, H)

  • SWrr r cosh1/3=109.47h=cos()(1)(6)

  • SW

  • SWcosr r rV3r r cos,,

  • SW

    (16)(18)

  • SW 5

    Diamond struct.Exp.SWT3Lattice constants5.429[]5.4315.432Cohesive energy4.63[eV]4.634.63Elastic constants C11167.0[GPa]161.6142.5C1265.0[GPa]81.675.4C4481.0[GPa]60.369.0Vacancy energy(3-4) [eV]2.823.70Interstitial energy Td(5-6) [eV]5.253.45H(4-5) [eV]6.954.61Bond-centered(4-5) [eV]5.995.86Surface energy (100)1.57[/11 cell]1.4161.367Surface energy (111)1.39[/11 cell]1.1580.957

  • SW 3

  • SWSiH. BalamanePhys. Rev. B46(1992), 2250 [7]

  • SWBrown, Maroudas 1994(Bulatov, Yip 1996)Epitaxy(Gilmer 1992)(Rubia, Gilmer 1995)SiO2(Jiang, Brown 1995)

  • Stillinger-Waber(Si)Tersoff(Si, C)Brenner(C, H)

  • Tersoff,g()

  • 120g()Bond-orderg()126

  • TersoffBCCFCCT2T3)

  • Tersoff

  • Tersoff(27)(29)

  • b1 b10 b 0!!2

  • Tersoff 5

    Diamond struct.Exp.SWT3Lattice constants5.429[]5.4315.432Cohesive energy4.63[eV]4.634.63Elastic constants C11167.0[GPa]161.6142.5C1265.0[GPa]81.675.4C4481.0[GPa]60.369.0Vacancy energy(3-4) [eV]2.823.70Interstitial energy Td(5-6) [eV]5.253.45H(4-5) [eV]6.954.61Bond-centered(4-5) [eV]5.995.86Surface energy (100)1.57[/11 cell]1.4161.367Surface energy (111)1.39[/11 cell]1.1580.957

  • Tersoff 3

  • TersoffT2SiH. BalamanePhys. Rev. B46(1992), 2250 [7]

  • Tersoff(Kitabatake 1993)(Motooka 1993, 2000)(Mizushima, Yip 1994)Nordlund 1998Bond-defect(Marques 2001)Si-H Marty(1995), (1994), (2002)C-H Brenner(1990), (2002)

  • Tersoff

  • SPE)TersoffNPT, 1600K

  • SiH4CVD300K SiH4AVI

  • MBEMolecular Beam EpitaxyK

  • 10keV Ar impacted to the silicon substrate at 300K

  • Stillinger-Waber(Si)Tersoff(Si, C)Brenner(C, H)

  • BrennerTersoffTersoffV=1/2(Vab+Vba)C-C(CH3)2C=C(CH3)2Tersoff

  • BrennerFCC, HCC, HCH5Tersoff

  • Brenner6

    Diamond struct.Exp.TersoffBrennerLattice constants3.566[]3.563.56Cohesive energy7.35[eV]7.377.32Elastic constants C111081[GPa]1090613(1078*)Elastic constants C12125[GPa]120405(131*)Elastic constants C44579[GPa]640631(680*)Vacancy energy(7.2)[eV] 4.327.4GraphiteExp.TersoffBrennerBond length1.42 []1.461.45Cohesive energy7.38[eV]7.407.38Elastic constants C111060[GPa]12101037Elastic constants C12180[GPa]-190155

  • BrennerCVD(Brenner 1990)(Harrison 1992)C60(Brenner 1991)(Yamaguchi, Maruyama 1997)

  • Brenner2002

  • Brenner(Sinnott 1997)(Shenderova 2000)(Che 1999, Mao 1999, Srivastava 1999)

  • C60

  • CNT

  • CNTNi

  • CNT

  • Stillinger-Waber(Si)Tersoff(Si, C)Brenner(C, H)

  • Tight-BindingTightBindingTBTBO(N2)

  • Tight-Bindingn(n)ii,

    TightBindingHijSlater-Koster

  • Tight-BindingHi,j

  • Order-NTbBond Order PotentialDensity MatrixFermi OperatorGlobal Density of StateBOPAbell-Tersoff

  • AbellEAMFSTersoff

  • (1)LOCAL

  • NHOP4-Hops 2-Hops

  • 1/2

  • [email protected], Comp. Mater. Sci, 12(1998),278 ElsevierHPWGWG http://www.fml.t.u-tokyo.ac.jp/wg-cmd/