Электронная техника - j. ?урнал издатся с 1958 года Учредитель: АО Научно-производственное предприятие Пульсар

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  • 2

    -

    3 (246) 2017

    ElEctronic EnginEEringSEriES 2

    SEmiconductor dEvicESScientific & technical journal

    issue 3 (246) 2017

    , 2017

  • 1958

    : - :.. , ..., , :.. , ..., , .. , ..., .. , .. , ..., , .. , , ().. , , ..-.., , ().. , ..., , .. , ..., () :.. , ..., : .. , ..., .. , ..... , ..-.. .. , ..... , ..., .. , ..... , ..-.... , ..., .. , ..... , ..., .. , ..... , ..-.., .. , ..., .. , ..... , ... .. , ..., .. , ..-.... , :.. .. :.. :.. .. 77-63844 27.11.2015 :105187, , , 27.: 8-495-366-50-65E-mail: journal@pulsarnpp.ru : - 59890 29.09.2017 . .-. . 18,7 1000 . 61 29.09.2017 .

    . ., . . - - .................................................... 4

    . ., . . GaN ................................................................ 10

    . ., . ., . ., . ., . ., . ., . . - .................................................................................... 15

    . ., . ., . . ...................................... 26

    . ., . ., . ., . ., . ., . . GaN ................................................. 34

    . ., . ., . ., - . ., . . GaN ......................................................... 44

    . . ........................................................ 52

    ..... 59

    , , 2017

  • ContentsGruzdov V. V., Kolkovsky Y. V. Radiation-hardened gallium nitride microwave technology ................ 4

    Kontsevoy Yu. A., Shamkhalov F. I. Material and structural inspection in the design of GaN microwave transistors .......................................................... 10

    Belolipetskiy A. V., Borisov O. V., Kolkovsky Yu. V., Legai G. V., Minnebaev V. M., Redka Al. V., Redka An. V. Electronic antenna unit for X-band space application AESA ............ 15

    Savchenko E. M., Budyakov P. S., Surkov N. S. Gain-block based ultra-high-speed ADC drivers .............................. 26

    Benuni I. S., Valamin E. A., Minnebaev V. M., Evgrafov A. Yu., Minnebaev S. V., Zubkov A. M. Extraction of GaN transistor model for large signal operation .......... 34

    Benuni I. S., Dyakonitsa O. Yu., Klimov A. O., Pavlyuk-Moroz N. A., Redka Al. V. Features of microwave GaN power amplifier dies solder bonding ... 44

    Kiselev M. N. Intellectual property management in the process of high-tech microwave electronic products creation............................ 52

    Formal rules for personal works submitted to journal ....................... 60

    Journal was published from 1958 yearFounder: JSC Scientific & Production Enterprise PulsarSupervisory CouncilPresident of the Supervisory Council:V.V. Gruzdov, Ph.D., Professor,General Director of JSC S&PE PulsarDeputy Chairman of the Supervisory Council:F.I. Shamkhalov, Sc.D., Professor,Scientific Secretary of JSC S&PE PulsarG.A. Egorochkin, Ph.D., General Director of JSC FSPC NNIIRTS.N. Ignatkov, General Director of JSC CB KuntsevoV.G. Nemudrov, Sc.D., Professor, General Director of JSC NIIMA ProgressV.L. Pankov, Professor, First Vice-Rector of Moscow Technological University (MIREA)A.S. Sigov, Academician of RAS, Sc.D., Professor, President of Moscow Technological University (MIREA)V.A. Telets, Sc.D., Professor, Director of IAEE NRNU MIFIA.A. Schuka, Sc.D., Professor of Moscow Technological University (MIREA)Editorial boardChief Editor:Yu.V. Kolkovsky, Sc.D., ProfessorDeputy Chief Editor:V.F. Sinkevich, Sc.D., ProfessorA.A. Shapovalov, Ph.D.A.N. Aleshin, Sc.D.A.S. Evstigneev, Ph.D.I.P. Zhigan, Sc.D., ProfessorV.I. Isyuk, Ph.D.E.V. Kaevitser, Ph.D.Yu.A. Kontsevoy, Sc.D., ProfessorI.V. Malyshev, Ph.D.E.I. Minakov, Sc.D., Associate ProfessorV.M. Minnebaev, Ph.D.V.A. Moshnikov, Sc.D., ProfessorK.O. Petrosyants, Sc.D., ProfessorE.M. Savchenko, Ph.D.A.S. Skrylev, Ph.D.V.A. Telets, Sc.D., ProfessorV.P. Chaliy, Ph.D..O. Minnebaeva, Editorial Board Executive SecretaryEditors:V.M. MinnebaevA.O. MinnebaevaDesign & layout:E.A. RepkinaTranslate:E.M. TemperD.I. LekanovThe certificate of registration of mass media 77-63844 of 27.11.2015The Journal is included in the list of the leading peer-reviewed scientific journals and publications HAC in Russia and the Russian Science Citation IndexJournal recognized at VINITI database and Abstract JournalPublishers & Editorial Staff Address:105187, Moscow, Okruzhnoy proezd, 27Tel.: 8-495-366-50-65E-mail: journal@pulsarnpp.ruSubscribe to catalogs Rospechat:Publication of scientific and technical information authority index number 59890Signed in print 29.09.2017Printing offset in colorPublisher's sheets 18.7 Print run 1000 copiesOrder 61 at 29.09.2017

  • . 2. . 3 (246) 20174

    . 2. . 3 (246) 2017, . 4-9Electronic engineering. Series 2. Semiconductor devices. Issue 3 (246) 2017, pp. 4-9

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    radiation-HardEnEd gallium nitridE microwavE tEcHnology

    v. v. gruzdov, y. v. KolkovskyJSC S&PE Pulsar, 105187, Moscow, Okruzhnoy proezd, 27

    In this paper, the results of uniform process development for the creation of space application microwave electronic devices are presented. Comparative analysis of physical and chemical characteristics of the main types of radiation-hardened gallium nitride microwave devices was performed, using a set of incoming and process inspection methods.

    Keywords: radiation-hardened gallium nitride microwave devices, uniform process, incoming inspection, process inspection

    Data of authors: Gruzdov Vadim Vladimirovich, Ph.D., Prof.; Kolkovsky Yury Vladimirovich, Sc.D., Prof., kolk@pulsarnpp.ru

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  • Electronic engineering. Series 2. Semiconductor devices. Issue 3 (246) 2017 9

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    5. Rudiger Quay Gallium Nitride Electronics