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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to [email protected].
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
![Page 2: ö ЮwÊ6 M ñ±Ñ/ìX ]§ e',¹Kö¢wÀø:uö·ÿ ¢¼³BÑú jû@Pq ÙfA ¾Æ¡ïÿmR · ö ЮwÊ6 M ñ±Ñ/ìX ]§ e',¹Kö¢wÀø:uö·ÿ ¢¼³BÑú jû@Pq ÙfA ¾Æ¡ïÿmR](https://reader030.pdfslide.tips/reader030/viewer/2022013021/5ebd5ef4a57ba9449e12d129/html5/thumbnails/2.jpg)
October 2013
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©2010 Fairchild Semiconductor CorporationFDP8N50NZ / FDPF8N50NZ Rev. C2
www.fairchildsemi.com1
FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET500 V, 8 A, 850 m
Features• RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A
• Low Gate Charge (Typ. 14 nC)
• Low Crss (Typ. 5 pF)
• 100% Avalanche Tested
• Improve dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
DescriptionUniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
• LCD/LED TV • Uninterruptible Power Supply
• Lighting • AC-DC Power Supply
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Thermal Characteristics
Symbol Parameter FDP8N50NZ FDPF8N50NZ Unit
VDSS Drain to Source Voltage 500 V
VGSS Gate to Source Voltage ±25 V
ID Drain Current- Continuous (TC = 25oC) 8 8*
A- Continuous (TC = 100oC) 4.8 4.8*
IDM Drain Current - Pulsed (Note 1) 32 32* A
EAS Single Pulsed Avalanche Energy (Note 2) 122 mJ
IAR Avalanche Current (Note 1) 8 A
EAR Repetitive Avalanche Energy (Note 1) 13 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns
PD Power Dissipation(TC = 25oC) 130 40.3 W
- Derate above 25oC 1 0.3 W/oC
TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC
TLMaximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds
300 oC
Symbol Parameter FDP8N50NZ FDPF8N50NZ Unit
RJC Thermal Resistance, Junction to Case, Max. 0.96 3.1 oC/WRJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5
*Drain current limited by maximum junction temperature
TO-220GDS TO-220F
GDS
G
D
S
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©2010 Fairchild Semiconductor CorporationFDP8N50NZ / FDPF8N50NZ Rev. C2
www.fairchildsemi.com2
Package Marking and Ordering Information
Electrical Characteristics TC = 25oC unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
FDP8N50NZ FDP8N50NZ TO-220 Tube N/A 50 units
FDPF8N50NZ FDPF8N50NZ TO-220F Tube N/A 50 units
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDSS Drain to Source Breakdown Voltage ID = 250A, VGS = 0V, TC = 25oC 500 - - V
BVDSS / TJ
Breakdown Voltage Temperature Coefficient
ID = 250A, Referenced to 25oC - 0.5 - V/oC
IDSS Zero Gate Voltage Drain CurrentVDS = 500V, VGS = 0V - - 1
AVDS = 400V, TC = 125oC - - 10
IGSS Gate to Body Leakage Current VGS = ±25V, VDS = 0V - - ±10 A
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250A 3.0 - 5.0 V
RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 4A - 0.77 0.85 gFS Forward Transconductance VDS = 20V, ID = 4A - 6.3 - S
Ciss Input CapacitanceVDS = 25V, VGS = 0Vf = 1MHz
- 565 735 pF
Coss Output Capacitance - 80 105 pF
Crss Reverse Transfer Capacitance - 5 8 pF
Qg(tot) Total Gate Charge at 10V VDS = 400V,ID = 8AVGS = 10V (Note 4)
- 14 18 nC
Qgs Gate to Source Gate Charge - 4 - nC
Qgd Gate to Drain “Miller” Charge - 6 - nC
td(on) Turn-On Delay TimeVDD = 250V, ID = 8ARG = 25, VGS = 10V
(Note 4)
- 17 45 ns
tr Turn-On Rise Time - 34 80 ns
td(off) Turn-Off Delay Time - 43 95 ns
tf Turn-Off Fall Time - 27 60 ns
IS Maximum Continuous Drain to Source Diode Forward Current - - 8 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 30 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 8A - - 1.4 V
trr Reverse Recovery Time VGS = 0V, ISD = 8AdIF/dt = 100A/s
- 228 - ns
Qrr Reverse Recovery Charge - 1.43 - C
Notes:1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3.8mH, IAS = 8A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 8A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
![Page 4: ö ЮwÊ6 M ñ±Ñ/ìX ]§ e',¹Kö¢wÀø:uö·ÿ ¢¼³BÑú jû@Pq ÙfA ¾Æ¡ïÿmR · ö ЮwÊ6 M ñ±Ñ/ìX ]§ e',¹Kö¢wÀø:uö·ÿ ¢¼³BÑú jû@Pq ÙfA ¾Æ¡ïÿmR](https://reader030.pdfslide.tips/reader030/viewer/2022013021/5ebd5ef4a57ba9449e12d129/html5/thumbnails/4.jpg)
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©2010 Fairchild Semiconductor CorporationFDP8N50NZ / FDPF8N50NZ Rev. C2
www.fairchildsemi.com3
Typical Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
0.03 0.1 1 10 200.03
0.1
1
10
30
*Notes: 1. 250s Pulse Test
2. TC = 25oC
VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
I D, D
rain
Cu
rren
t[A
]
VDS, Drain-Source Voltage[V]2 4 6 8 10
0.1
1
10
30
-55oC150oC
*Notes: 1. VDS = 20V
2. 250s Pulse Test
25oC
I D, D
rain
Cu
rren
t[A
]
VGS, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
0 3 6 9 12 15 180.4
0.8
1.2
1.6
2.0
*Note: TC = 25oC
VGS = 20V
VGS = 10V
RD
S(O
N) [],
Dra
in-S
ou
rce
On
-Res
ista
nc
e
ID, Drain Current [A]0.4 0.8 1.2 1.6 2.0 2.4
1
10
100
*Notes:1. VGS = 0V
2. 250s Pulse Test
150oC
I S, R
ever
se D
rain
Cu
rren
t [A
]
VSD, Body Diode Forward Voltage [V]
25oC
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
0.1 1 10 300
300
600
900
1200
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + CgdCrss = Cgd
*Note: 1. VGS = 0V
2. f = 1MHz
Crss
Ca
pa
cit
an
ces
[p
F]
VDS, Drain-Source Voltage [V]0 3 6 9 12 15
0
2
4
6
8
10
*Note: ID = 8A
VDS = 100VVDS = 250VVDS = 400V
VG
S, G
ate
-So
urc
e V
olt
age
[V
]
Qg, Total Gate Charge [nC]
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©2010 Fairchild Semiconductor CorporationFDP8N50NZ / FDPF8N50NZ Rev. C2
www.fairchildsemi.com4
Typical Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature
-100 -50 0 50 100 1500.8
0.9
1.0
1.1
1.2
*Notes: 1. VGS = 0V
2. ID = 250A
BV
DS
S, [
No
rma
lized
]
Dra
in-S
ou
rce
Bre
ak
do
wn
Vo
lta
ge
TJ, Junction Temperature [oC]
-100 -50 0 50 100 1500.0
0.5
1.0
1.5
2.0
2.5
3.0
*Notes: 1. VGS = 10V
2. ID = 4A
RD
S(o
n),
[No
rma
lize
d]
Dra
in-S
ou
rce
On
-Re
sis
tan
ce
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area - FDP8N50NZ - FDPF8N50NZ
1 10 100 10000.01
0.1
1
10
5010s
100s
1ms
10ms
I D, D
rain
Cu
rren
t [A
]
VDS, Drain-Source Voltage [V]
Operation in This Area is Limited by R DS(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
DC
1 10 100 10000.01
0.1
1
10
5010s
100s
1ms10ms
I D, D
rain
Cu
rren
t [A
]
VDS, Drain-Source Voltage [V]
Operation in This Area is Limited by R DS(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
DC
Figure 11. Maximum Drain Current Figure 12. Unclamped Inductive vs. Case Temperature
25 50 75 100 125 1500
2
4
6
8
10
I D, D
rain
Cu
rre
nt
[A]
TC, Case Temperature [oC]0.01 0.1 1 41
8
10
TJ = 25oC
TJ = 125oC
tAV, TIME IN AVALANCHE(ms)
I AS, A
VA
LA
NC
HE
CU
RR
EN
T(A
)
Switching Capability
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©2010 Fairchild Semiconductor CorporationFDP8N50NZ / FDPF8N50NZ Rev. C2
www.fairchildsemi.com5
Typical Characteristics (Continued)
Figure 13. Transient Thermal Response Curve - FDP8N50NZ
10-5 10-4 10-3 10-2 10-1 10.01
0.1
1
2
0.01
0.1
0.2
0.05
0.02 *Notes:
1. ZJC(t) = 0.96oC/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
0.5
Single pulse
Th
erm
al R
esp
on
se [
ZJ
C]
Rectangular Pulse Duration [sec]
t1
PDM
t2
ZJ
C(t
), T
herm
al R
espo
nse
[oC
/W]
t1, Square Wave Pulse Duration [sec]
Figure 14. Transient Thermal Response Curve
10-5 10-4 10-3 10-2 10-1 1 10 102 1030.01
0.1
1
0.01
0.1
0.2
0.05
0.02
*Notes:
1. ZJC(t) = 3.1oC/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
0.5
Single pulse
Th
erm
al R
esp
on
se [
ZJ
C]
Rectangular Pulse Duration [sec]
5
t1
PDM
t2
ZJ
C(t
), T
herm
al R
espo
nse
[oC
/W]
t1, Square Wave Pulse Duration [sec]
- FDPF8N50NZ
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©2010 Fairchild Semiconductor CorporationFDP8N50NZ / FDPF8N50NZ Rev. C2
www.fairchildsemi.com6
Figure 15. Gate Charge Test Circuit & Waveform
Figure 16. Resistive Switching Test Circuit & Waveforms
Figure 17. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VGS
IG = const.
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©2010 Fairchild Semiconductor CorporationFDP8N50NZ / FDPF8N50NZ Rev. C2
www.fairchildsemi.com7
Figure 18. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
DriverRG
Same Type as DUT
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
VDD
LI SD
10VVGS
( Driver )
I SD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =Gate Pulse Width
Gate Pulse Period--------------------------
DUT
VDS
+
_
DriverRG
Same Type as DUT
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
VDD
LLI SD
10VVGS
( Driver )
I SD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =Gate Pulse Width
Gate Pulse Period--------------------------D =Gate Pulse Width
Gate Pulse Period--------------------------
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©2010 Fairchild Semiconductor CorporationFDP8N50NZ / FDPF8N50NZ Rev. C2
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Mechanical Dimensions
Dimension in Millimeters
TO-220 3L
Figure 19. TO-220, Molded, 3Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
![Page 10: ö ЮwÊ6 M ñ±Ñ/ìX ]§ e',¹Kö¢wÀø:uö·ÿ ¢¼³BÑú jû@Pq ÙfA ¾Æ¡ïÿmR · ö ЮwÊ6 M ñ±Ñ/ìX ]§ e',¹Kö¢wÀø:uö·ÿ ¢¼³BÑú jû@Pq ÙfA ¾Æ¡ïÿmR](https://reader030.pdfslide.tips/reader030/viewer/2022013021/5ebd5ef4a57ba9449e12d129/html5/thumbnails/10.jpg)
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©2010 Fairchild Semiconductor CorporationFDP8N50NZ / FDPF8N50NZ Rev. C2
www.fairchildsemi.com9
Mechanical Dimensions
Dimension in Millimeters
TO-220F 3L
Figure 20. TO220, Molded, 3LD, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
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©2010 Fairchild Semiconductor CorporationFDP8N50NZ / FDPF8N50NZ Rev. C2
www.fairchildsemi.com10
TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONSDefinition of Terms
AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®
Dual Cool™EcoSPARK®
EfficentMax™ESBC™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™FACT®
FAST®
FastvCore™FETBench™FPS™
F-PFS™FRFET®
Global Power ResourceSM
GreenBridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louder and Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver®
OptoHiT™OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
PowerXS™Programmable Active Droop™QFET®
QS™Quiet Series™RapidConfigure™
Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®
STEALTH™SuperFET®
SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®
SyncFET™
Sync-Lock™®*
TinyBoost®
TinyBuck®
TinyCalc™TinyLogic®
TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*SerDes™
UHC®
Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™
®
™
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
Rev. I66
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®
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