II
References for Active Matrix Organic Light Emitting Diode
Displays
Directed by Hailong Jiao
ABSTRACT
Active matrix organic light-emitting diode (AMOLED) display is
regarded as the next-
generation mainstream display due to the advantages of fast
response, wide viewing angle,
high contrast, high saturation, low power consumption, and low
cost. AMOLED is widely
used in flexible and transparent displays. However, due to the
issues such as the drift of thin
film transistor (TFT) threshold voltage, non-uniform mobility, and
degradation of OLED, the
prevalence of AMOLED is still constrained. To obtain better display
effect, these undesirable
factors must be eliminated or at least mitigated. A systematic
research on two existing
compensation technologies is carried out in this thesis:
intra-pixel circuit compensation and
peripheral compensation. The main contributions of this thesis are
as follows.
First of all, a voltage-programming pixel circuit with mobility
compensation is proposed.
While compensating the threshold voltage variation, the proposed
pixel circuit can also
compensate the non-uniformity of mobility. Only two control signal
lines are required, which
can effectively reduce the complexity of the peripheral driver
integrated circuit (IC) and
increase the aperture ratio of the pixel array. Furthermore, the
propsoed pixel circuit is suitable
for microdisplay. The mobility compensation structure can
effectively increase the data input
range by controlling the discharge time of the data input
stage.
Second, an alternative voltage-programming pixel circuit also with
mobility
compensation is proposed. This circuit utilizes the fact that the
source voltage of the driving
TFT (TD), namely the anode voltage of OLED, follows the change of
the mobility to maintain
the gate voltage of TD through the coupling effect of capacitance
during the emission stage.
Therefore, the gate-source voltage can be tuned to reduce the
influence of mobility non-
uniformity on the saturation current of TD (the OLED luminous
current). Furthermore, the
timing of the pixel circuit is simple. The scan line can be
multiplexed to realize continuous
ABSTRACT
III
input of data, which can simplify the design of the timing control
circuit and improve the pixel
aperture ratio.
Third, based on the importance of the reference in the peripheral
compensation, a high
power supply rejection ratio (PSRR), low temperature coefficient
(TC), and variable output
voltage mode bandgap reference is studied. By adding a PSRR
enhancement structure, a
cascode current mirror, and a negative feedback loop in the startup
circuit, the PSRR of the
reference output is increased. Furthermore, the high-order
compensation of the reference
output is achieved by utilizing the mismatch of the current.
Fourth, a hybrid current mode voltage reference with low
temperature coefficient and low
power consumption is proposed. The different temperature
characteristics of the BJT-based
and MOS-based references in the subthreshold region are used to
obtain this current mode
reference with ultra-low temperature coefficient. This proposed
reference is especially suitable
for circuits that are with low supply voltage and require low power
consumption.
Finally, a hybrid current mode voltage reference with ultra-wide
range of operating
temperature is proposed. The negative temperature characteristics
of BJT and sub-threshold
MOS are used to make high-order compensation. Furthermore, the
low-temperature
segmentation compensation module is added to widen the operating
temperature range of the
circuit. This reference can be applied for circuits operating at
low supply voltage and
extremely wide temperature range.
1
VDD T1T2 CS1
A B OLED T3
VL VREFVREF = 0 T4 C
2
VSCAN2 T2T3T4 VSCAN1 T1
TD -TD A
T2TD T3 TD A VL + VTH_TD
3
VSCAN1 VSCAN2 T1 T2T3T4
0 VDATA CS2 CS1 CS2
A TD -TD A
ΔVµ_TD
S S
C C
2.2
2.2T k = µ • COX • (W/L)_TDµ
COX TFT W L TFT
CS1
V V Ck
VSCAN1 VSCAN2 T2T3 CS2
OLED T1TD OLED B
TD A B
OLED TD
C C C C C 2.4
OLED TFT OLED TFT
OLED µ
ΔVµ_TD ΔVµ_TD T
2.1.2
RPIRensselaer Polytechnic Institue IGZO TFT
Thin Film Transistor and Advanced Display Lab
OLED TFT OLED
I-V IGZO TFT OLED OLED
COLED
TFT OLED 2.1
0 1 2 3 4 5 6 7 8 9 10 0
200
400
600
800
1000
1200
% )
2.6 ΔVTH_TD = ±0.4 V ΔVTH_TD = 0.4 V OLED
2.6 OLED VTH_TD±0.4 V VTH_OLED 0.4 V
OLED
TFT OLED VTH_TD VTH_OLED 0.4 V
15.1%
OLED OLED
OLED
OLED OLED
AMOLED
2.2.1
2.7a CS1
-
a b
1
VEM(n) VSCAN(n) T1T2 T3
T3 A VDD T1T2 B VB
VHIGH
VEM(n)T1 BC
TD TD VB T2 TD TD
VB VTH_TD + VTH_OLEDVTH_TD VTH_OLED TD OLED
3
VSCAN(n+1)A T4 0 B
CS1 VB
VDATA VDD
VEM(n)T1 TD TD
OLED OLED
OLED TD VC VOLED(µ) OLED
2 _ ( )(| | )
C W I V V V
L
2.6
2.6OLED TD VTH_TD OLED
VTH_OLEDVOLED(μ)VOLED(μ)VTH_OLED
VOLED(μ) μ
VOLED(μ) VOLED(μ)
VTH_OLED OLED VTH_OLEDOLED VOLED(μ)
OLED
2.9 0.5 V
8% 2.10
±30%
OLED
0
5
10
15
V C
0 200 400 600 800 1000 1200 1400 1600 1800 2000
IOLED
-4 -3 -2 -1 0 1 0
200 400 600 800
VTH = 0V VTH_TD = -0.5V VTH_OLED = +0.5V VTH_TD = +0.5V
I O L
VDATA (V)
-10 -8 -6 -4 -2 0 2 4 6 8 10
C E
% )
2.9 ΔVTH_TD = ±0.5 V ΔVTH_OLED = 0.5 V IOLED
Reset VTH extraction Data coupling Emission
30%OLED
6% VTH_TD±0.4 V VTH_OLED 0.4 V
OLED 15.1%
OLED
AMOLED
0.5V 8%
CS1
OLED
Types of signal line 1 3 1 3 2 2
VTH variation No Yes No Yes Yes Yes
OLED degradation No Yes No Yes Yes Yes
Mobility deviation No No Yes No Yes Yes
IR-drop No Yes Yes Yes Yes Yes
VFB VSCAN
AMPEN C Vref
Vref < VOLEDVFB VSCANT2T3
VDATA T2 A T1 B OLED
AMOLED
OLED Ipixel T3 Cp
C C Vref C
C Ipixel
IFBIFB Iref
C1
C1C2 Vref IFB > Iref
VOUT
OLED
ΔVBE
MN Q1Q2 Q2Q1
VREF
Q3 - VEB3 Q1Q2 - ΔVEB
AMOLED
R 3.1
r r
T T
ln = T
VEB VTln(T/Tr)
Tr
r r r r
T kT T T T V ln T q T T T 3.2
PSRR
[ ( ) ]g ma B A mdd dd oav g v v g v r 3.3
1 1( )A m dd g Qv g v v r 3.4
30
3 1 2( )B m dd g Qv g v v R r 3.5
5 2 3( )( )ref m dd g Qv g v v R r 3.6
gmaroa gmddroa Ai Addgm1
gm2gm3 M1M2M3 rQ1rQ2rQ3 Q1Q2Q3
gm1 = gm2 = gm3 = gm
20 log ref
v A g R r r
Add = 1 vref/vdd
3.8 Strat Up
IBIASPSRR PSRR EnhancementBGR
CoreV-VV-I
ln =( )
+ T
R R R
ln =( )
+ T
R R R 3.10
ln =( )
( + ) T
3.11ROUT R2 32
trimming 3.9 R2
A PM6 B
AMOLED
NM17
C
Vg1
IB
Vg2
trimming trimming
trimming —
R— TC
32
VREF R I
3.9 trimming D<0:N-1> N
2N 2N
N = 5R20 = 0.8R2ΔR = 0.4R2/2N 10000
17 S17
V-V
AB PMOS
NMOS 1/f
PSRR 3.8 PSRR
3.6 PM3 PM4 VDD AB
VDD B R1 A
Vg1 VDD PTAT
PM1PM2 PM3PM4
VDD
PM2PM4 PM4 PM2
3.8 PM1 PM2 I1 I2
I1 I2 ΔIεS = ΔI/I I2/I1 = 1 + εS
εS 1 R1
2 1 1 1
V V V I ln N lnN
R R R 3.13
2 2
R lnN 3.14
poly
2 2 2 1 2( )[1 ( ) ( ) ]r r rR R T B T T B T T 3.15
3.15B1 B2 R2 B1 < 0B2 > 0
3.13.23.143.15
36
10-1 100 101 102 103 104 105 106 107 108 109 1010
-120
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
+ PSRR Enhancement
P S
R R
WNM12 = 1.5 m
WNM12 = 2 m
WNM12 = 2.5 m
WNM12 = 3m
B.
3 trimming
3.13 Sample1Sample2 Sample3 1.1 mV3.7 mV
8.9 mV 4.99 ppm/°C17.85 ppm/°C 46.85 ppm/°C
3.14 BGR PSRR
5 Hz 30 MHz PSRR -76.1
dB @ 10 Hz-69.8 dB @ 1 kHz-44.9 dB @ 10 MHz
1.2948
-40 -20 0 20 40 60 80 100 120 140
V re
f ( V
PSRR TC CSMC
0.25μm
PSRR
LDO
-40~130 °C
4.99 ppm/°C PSRR -80 dB
3.3 V 37 μA
3.4
38
BJT MOS
VREF=(αICTAT+βIPTAT)RO
BJT
4.2 VREF
1 1 2( ln / / )REF T EB OV V MN R V R R 4.2
MN Q2Q1 PM1PM2
MN R1R2 RO
a b
Vref
RO
PM
I
VDD
VSS
RO1
Vref
RO
PM
I
VDD
VSS
rQ
Q
4.3 1.2 V
μA BJT- 0.6 V
I VT 26 mV rQ kΩ
kΩ RORO1 PN
RO
[53][54][55]
[56]
4.4
VREG VDD VREF
VREF VOUT
4.6
io
1
_ 4 1 _ 4 _ 2 _ 2
o o o m NM
d s N M d s N M d s PM
v vv i g v
r r r 4.3
r r
_ 3 _ 2
/ / / / (1 )(1 )i
ds PM ds NMo O v ds PM ds NM
o m NM ds NM m PM ds PM
r rv R r r
i g r g r
I1 I2 _ 2ds PMr _ 2ds NMr
_ 4ds NMr _ 3 _ 3 1m PM ds PMg r
_ 4 _ 3 _ 3
R g g r
M4
_ 4 _ 31 m NM ds PMg r VDDVREG PSRR
_ 2 _ 2 _ 4 _ 3 _ 3
1 20lg 20lg 20lg
reg o V
dd o ds PM ds PM m NM m PM ds PM
v R PSRR
4.7
VREG
[62][61]
BJT - VBE
MOS - VGS
MOS
BJT
1 1 2 2( )REF PTAT PTAT CTAT OUTV N I N I N I R 4.8
IPTAT1
PTAT IPTAT1 NM1
NM2 - R1
1 1 1 1
R R 4.9
n 1~3 [58][59]
ln(10) (1 )S T
R R 4.11
( ) )/ ( ( ) 1
r r
T R
T k V ln T T T T
T q T T 4.13
2 3 0 1 2 3( )REF OUTV a a T a T a T R 4.14
a0a1a2 a3
0
R q R T q
4.16
2
C RT qR q
4.18
N2R2M2NRN1R1 M1 a1a2
Tr
R 5-bit trimmingtrimming MC
sigma 2~3 trimming 4.9b trimming
R
4.9 a trimming b trimming
4.9a trimming [57][58]
1.5 V 13 μA PSRR -57.55 dB
-76.87 dB -77.15 dB 1.3 V -71.17 dB 1.4 V -
84.24 dB 2.1 V -112 dB
4.17
PTAT
1 2( )REF PTAT CTAT OUTV N I N I I R 4.19
PTAT Q1Q2 R1
1 1
R R 4.20
2 5 2
R 4.21
r r
T T 4.22
I V V nV
I 4.23
( ) ( ) ( ) THTH TH r V rV T V T B T T ln(10) (1 )S
OX
VREF- +
A
53
2 3 0 1 2 3( )REF OU TV a a T a T a T I R 4.24
2
N kT a V V T B T
R q
R q R T q
4.26
2
R qT C Iq
4.19
PM6 PM7 PM8 PM9
NM6 NM7 PM7 PTAT
[1] Bernanose A, Comte M, Vouaux P. A new method of emission of
light by certain organic
compounds[J]. Journal de Chimie Physique, 1953, 50: 64-68.
[2] Pope M, Kallmann H P, Magnante P. Electroluminescence in
organic crystals[J]. The Journal of
Chemical Physics, 1963, 38(8): 2042-2043.
[3] Helfrich W, Schneider W G. Recombination radiation in
anthracene crystals[J]. Physical Review
Letters, 1965, 14(7): 229.
1983, 24(6): 733-738.
[5] Tang C W, VanSlyke S A. Organic electroluminescent diodes[J].
Applied physics letters, 1987, 51(12):
913-915.
[6] Tang C W, VanSlyke S A, Chen C H. Electroluminescence of doped
organic thin films[J]. Journal of
Applied Physics, 1989, 65(9): 3610-3616.
[7] Burroughes J H, Bradley D D C, Brown A R, et al. Light-emitting
diodes based on conjugated
polymers[J]. Nature, 1990, 347(6293): 539-541.
[8] Baldo M A, O'brien D F, You Y, et al. Highly efficient
phosphorescent emission from organic
electroluminescent devices[J]. Nature, 1998, 395(6698):
151-154.
[9] Han C W, Pieh S H, Pang H S, et al. 15inch RGBW panel using
twostacked white OLED and color
filter for largesized display applications[C]// SID Symposium
Digest of Technical Papers. Oxford, UK:
Blackwell Publishing Ltd, 2010, 41(1): 136-139.
[10] Kuni S, Šego Z. OLED technology and displays[C]// Proceedings
ELMAR-2012. IEEE, 2012: 31-35.
[11] Sang H J, Hong K L, Chang Y K, et al. 15-inch AMOLED display
with SPC TFTs and a symmetric
driving method [C]// SID Symposium Digest of Technical Papers,
2008, 39(1): 101-104.
[12] Ukai Y. TFT-LCDs as the future leading role in FPD [C]// SID
Symposium Digest of Technical Papers,
2013, 44(1): 28-31.
[13] Aziz H, Popovic Z D, Hu N X, et al. Degradation mechanism of
small molecule-based organic light-
emitting devices[J]. Synthetic Metals, 1996, 80(1): 7-10.
[14] Baldo M. The electronic and optical properties of amorphous
organic semiconductors[J]. Journal of
the Optical Society of America, 1952, 42(12): 898-903.
[15] Nakamura S, Mukai T, Senoh M, et al. InxGa(1−x)N/InyGa(1−y)N
superlattices grown on GaN films[J].
Journal of applied physics, 1993, 74(6): 3911-3915.
[16] Gu G, Forrest S R. Design of flat-panel displays based on
organic light-emitting devices[J]. IEEE
Journal of selected topics in quantum electronics, 1998, 4(1):
83-99.
[17] Dawson R M A, Kane M G. Pursuit of active matrix organic light
emitting diode displays[C]// SID
Symposium Digest of Technical Papers, 2001, 32(1): 372-375.
66
[18] Matsuura N, Zhao W, Huang Z, et al. Digital radiology using
active matrix readout: amplified pixel
detector array for fluoroscopy[J]. Medical Physics, 1999, 26(5):
672-681.
[19] Watanabe H. Statistics of grain boundaries in polysilicon[J].
IEEE Transactions on Electron Devices,
2007, 54(1): 38-44.
[20] Wang L, Sun L, Han D, et al. A hybrid a-Si and Poly-Si TFTs
technology for AMOLED pixel
circuits[J]. Journal of Display Technology, 2014, 10(4): 317 -
320.
[21] Meng Z, Wong M. Active-matrix organic light-emitting diode
displays realized using metal-induced
unilaterally crystallized polycrystalline silicon thin-film
transistors[J]. IEEE Transactions on Electron
Devices, 2002, 49(6): 991-996.
[22] Chen T F, Yeh C F, Lou J C. Investigation of grain boundary
control in the drain junction on laser-
crystalized poly-Si thin film transistors[J]. IEEE Electron Device
Letters, 2003, 24(7): 457-459.
[23] Li J, Kang K, Roy K. Variation estimation and compensation
technique in scaled LTPS TFT circuits
for low-power low-cost applications[J]. IEEE Transactions on
Computer-Aided Design of Integrated
Circuits and Systems, 2009, 28(1): 46-59.
[24] Park J S, Kim T W, Stryakhilev D, et al. Flexible full color
organic light-emitting diode display on
polyimide plastic substrate driven by amorphous indium gallium zinc
oxide thin-film transistors[J].
Applied Physics Letters, 2009, 95(1): 013503.
[25] Lee J S, Chang S, Koo S M, et al. High-performance a-IGZO TFT
with gate dielectric fabricated at
room temperature[J]. Electron Device Letters IEEE, 2010, 31(3):
225-227.
[26] Mativenga M, An S, Jin J. Bulk accumulation a-IGZO TFT for
high current and turn-on voltage
uniformity[J]. IEEE Electron Device Letters, 2013, 34(12):
1533-1535.
[27] Kim Y, Kanicki J, Lee H. An a-InGaZnO TFT pixel circuit
compensating threshold voltage and
mobility variations in AMOLEDs[J]. Journal of Display Technology,
2014, 10(5): 402-406.
[28] Lin C L, Lai P C, et al. Pixel circuit with parallel driving
scheme for compensating luminance variation
based on a-IGZO TFT for AMOLED displays[J]. Journal of Display
Technology, 2016, 12(12): 1681-
1687.
[29] Yi S, Wu J, Liao C, et al. An a-IGZO TFT AMOLED pixel circuit
to compensate threshold voltage
and mobility variations[C]// 2018 25th International Workshop on
Active-Matrix Flatpanel Displays
and Devices (AM-FPD). IEEE, 2018: 1-4.
[30] Kim D, Kim Y, Lee S, et al. High resolution a-IGZO TFT pixel
circuit for compensating threshold
voltage shifts and OLED degradations[J]. IEEE Journal of the
Electron Devices Society, 2017, 5(5):
372-377.
[31] Leng C, Wang L, Zhang S. An AMOLED pixel circuit with negative
VTH compensation function[C]//
IDW’13, 2013: 416-418.
[32] Wu J, Yi S, Liao C, et al. New AMOLED pixel circuit to
compensate characteristics variations of
LTPS TFTs and voltage drop[C]// 2018 25th International Workshop on
Active-Matrix Flatpanel
Displays and Devices (AM-FPD). IEEE, 2018: 1-4.
[33] Bang J S, Kim H S, Park S H, et al. 50.2: A Real-time TFT
compensation through power line current
sensing for high-resolution AMOLED displays[C]// SID Symposium
Digest of Technical Papers. 2014,
45(1): 724-727.
67
[34] Jeon J Y, Jeon Y J, Son Y S, et al. A double zeros compensated
direct fast feedback current driver for
medium to large AMOLED displays[J]. Circuits & Systems I
Regular Papers IEEE Transactions on,
2012, 59(10): 2197-2209.
[35] Jeon Y J, Jeon J Y, Son Y S, et al. A high-speed current-mode
data driver with push-pull transient
current feedforward for full-HD AMOLED displays [J]. Solid-State
Circuits, IEEE Journal of, 2010,
45(9): 1881-1895.
[36] Lin C L, Chang F C, Lai P C, et al. A charge-pump-based
current feedback method for AMOLED
displays[J]. Journal of Display Technology, 2013, 9(10):
783-786.
[37] Yang J H, Jeon J Y, Kim H S, et al. A Novel current-mode
driving technique for real-time image
compensation in AMOLED displays[C]// SID Symposium Digest of
Technical Papers, 2012, 43(1):
647-650.
[38] Bang J S, Kim H S, P S H, et al. A real-time TFT compensation
through power line current sensing
for high-resolution AMOLED displays[C]// Sid Symposium Digest of
Technical Papers, 2015, 45(1):
724-727.
[39] Li H G, Yin X Y, Zhang Z Y. High-precision mixed modulation
DAC for an 8-bit AMOLED driver
IC[J]. Journal of Display Technology, 2015, 11(5): 423-429.
[40] Jeon J Y, Jeon Y J, Son Y S, et al. A direct fast feedback
current driver using an inverting amplifier
for high-quality AMOLED displays[J]. IEEE Transactions on Circuits
& Systems II Express Briefs,
2012, 59(7): 414-418.
[41] Ono S, Miwa K, Maekawa Y, et al. VT compensation circuit for
AMOLED displays composed of two
TFTs and one capacitor[J]. IEEE Transactions on Electron Devices,
2007, 54(3): 462-467.
[42] Lin Y C, Shieh H P D, Kanicki J. A novel current-scaling a-Si:
H TFTs pixel electrode circuit for
AMOLEDs[J]. IEEE Transactions on electron devices, 2005, 52(6):
1123-1131.
[43] Lin C L, Chang W Y, Hung C C. Compensating pixel circuit
driving AMOLED display with a-IGZO
TFTs[J]. IEEE Electron Device Letters, 2013, 34(9):
1166-1168.
[44] Song S J, Nam H. In-pixel mobility compensation scheme for
AMOLED pixel circuits[J]. Journal of
Display Technology, 2015, 11(2): 209-213.
[45] Umeda K, Hori Y, Nakajima K. A novel linear digital-to-analog
converter using capacitor coupled
adder for LCD driver ICs [C]// SID Symposium Digest of Technical
Papers, 2008, 39(1): 885-888.
[46] Yin P Y, Lu C W, Hsu C Y, et al. An 11-bit two-stage
hybrid-DAC for TFT LCD column drivers[C]//
2013 4th International Conference on Intelligent Systems, Modelling
and Simulation. IEEE, 2013:
631-635.
[47] Wang C, Leng C, Lam H M, et al. A peripheral compensation
scheme for AMOLED with data voltage,
VTH and aging information analogously added in Pixel circuit[C]//
SID Symposium Digest of
Technical Papers, 2016, 47(1): 1250-1253.
[48] Fan J, Wang C, Lam H M, et al. A high accuracy current
comparison scheme for external compensation
circuit of AMOLED displays[J]. SID Symposium Digest of Technical
Papers, 2016, 47(1): 1261-1264.
[49] Razavi B. Design of analog CMOS integrated circuits[M]. ,
2005.
[50] Tsividis Y P. Accurate analysis of temperature effects in
IC-VBE characteristics with application to
68
bandgap reference sources[J]. EEE Journal of Solid-State Circuits,
1980, 15(6): 1076-1084.
[51] Lin S L, Salama C A T. A VBE(T) model with application to
bandgap reference design[J]. IEEE Journal
of Solid-State Circuits, 1985, 20(6): 1283-1285.
[52] Malcovati P, Maloberti F, Fiocchi C, et al.
Curvature-compensated BiCMOS bandgap with 1-V supply
voltage[J]. IEEE Journal of Solid-State Circuits, 2001, 36(7):
1076-1081.
[53] Wang L, Zhan C, Tang J, et al. Analysis and design of a
current-mode bandgap reference with high
power supply ripple rejection[J]. Microelectronics journal, 2017,
68: 7-13.
[54] Brooks T L, Westwick A L. A low-power differential CMOS
bandgap reference[C]// Proceedings of
IEEE International Solid-State Circuits Conference-ISSCC'94. IEEE,
1994: 248-249.
[55] Zhu Y, Fei L, Yang Y, et al. A -115dB PSRR CMOS bandgap
reference with a novel voltage self-
regulating technique[C]// Custom Integrated Circuits Conference.
2014.
[56] Qu Y, Peng X H, Hou L G, et al. A 0.662ppm/°C high PSRR CMOS
bandgap voltage reference[C]//
IEEE International Conference on Solid-state & Integrated
Circuit Technology. 2017.
[57] Gray P R, Hurst P, Meyer R G, et al. Analysis and design of
analog integrated circuits[M]. Wiley,
2001.
[58] Rudenko T, Kilchytska V, Colinge J P, et al. On the
high-temperature subthreshold slope of thin-film
SOI MOSFETs[J]. IEEE Electron Device Letters, 2002, 23(3):
148-150.
[59] . CMOS [M]. , 2012.
[60] Jiang J, Shu W, Chang J S. A 5.6 ppm/°C temperature
coefficient, 87-dB PSRR, sub-1-V voltage
reference in 65-nm CMOS exploiting the zero-temperature-coefficient
point[J]. IEEE Journal of Solid-
State Circuits, 2017, 52(3): 623-633.
[61] Duan Q, Roh J. A 1.2-V 4.2-ppm/°C high-order
curvature-compensated CMOS bandgap reference[J].
IEEE Transactions on Circuits and Systems I: regular papers, 2015,
62(3): 662-670.
[62] Wang R, Lu W, Zhao M, et al. A Sub-1ppm/°C current-mode CMOS
bandgap reference with piecewise
curvature compensation[J]. IEEE Transactions on Circuits and
Systems I: Regular Papers, 2018, 65(3):
904-913.
[63] Huang C, Zhan C, He L, et al. A 0.6-V minimum-supply, 23.5
ppm/°C subthreshold CMOS voltage
reference with 0.45% variation coefficient[J]. IEEE Transactions on
Circuits and Systems II: Express
Briefs, 2018, 65(10): 1290-1294.
[64] Wang L, Zhan C, Tang J, et al. A 0.9-V 33.7-ppm/°C 85-nW
sub-bandgap voltage reference consisting
of subthreshold MOSFETs and single BJT[J]. IEEE Transactions on
Very Large Scale Integration
(VLSI) Systems, 2018 (99): 1-5.
69
[1] Yi S, Wu J, Liao C, et al. An a-IGZO TFT AMOLED pixel circuit
to compensate threshold voltage
and mobility variations[C]// 2018 25th International Workshop on
Active-Matrix Flatpanel Displays
and Devices (AM-FPD). IEEE, 2018: 1-4.
[2] Yi S, Huo X, Liao C, et al. An a-IGZO TFT pixel circuit for
AMOLED display systems with
compensation for mobility and threshold voltage variations[C]//
2018 IEEE International Conference
on Electron Devices and Solid State Circuits (EDSSC). IEEE, 2018:
1-2.
[3] Wu J, Yi S, Liao C, et al. New AMOLED pixel circuit to
compensate characteristics variations of
LTPS TFTs and voltage drop[C]// 2018 25th International Workshop on
Active-Matrix Flatpanel
Displays and Devices (AM-FPD). IEEE, 2018: 1-4.
[4] Huo X, Liao C, Wu J, Yi S, et al. An OLEDoS pixel circuit with
extended data voltage range for high
resolution micro-displays[C]// SID Symposium Digest of Technical
Papers. 2018, 49(1): 1373-1376.
[5] Wu J, Wang Y, Huo X, Yi S, et al. An AMOLED LTPS-TFT pixel
circuit using mirror structure to
compensate Vth variation and voltage drop[C]// 2018 IEEE
International Conference on Electron
Devices and Solid State Circuits (EDSSC). IEEE, 2018: 1-2.
[6] Wang Y, Liao C, Ma Y, Wu J, Yi S, et al. P-48: Integrated
a-IGZO TFT gate driver with programmable
output for AMOLED display[C]// SID Symposium Digest of Technical
Papers. 2018, 49(1): 1377-
1380.