1

1. 2. 3. 4. 5. 6. 7.

1

2

3

4-(top down)(Nanolithography)(IC)X

(photolithography):(EBL, Electron Beam Lithography):(Ion Beam Lithography):(FIB, Focused Ion Beam)(Nanoimprint Lithography):nm(DPN, Dip Pen Nanolithography):AFMX(XRL, X ray Lithography):(SR)XX35nmX5

-(top down)(Lithography) (Etching) (PlasmaEtching)(Lift-off)?(exposure source)(mask)(stencil)(resist)() (ion implantation)(metal evaporation)(plasma etching)(features)(etching)(PE; plasma etching)()(lift-off)(deposit)()MESFET(ultra-large-scale IC)6

-(top down)AFMsi-(top down)(NIL, Nanoimprint Lithography)1994Chou(250ns)LADI(Laser Assited Direct Imprinting)XeCl(excimer laser)

1.(RIE)(liftoff)8-(top down) (Etching)

ICIC9

-(top down)-(Bottom up)

Quantum dotQuantum wellNano-thin film(lattice mismatch)1. (Frank and van Merwe, 1949) (a) =film +int sub 0

11 -(Bottom up)

(chemical vapor deposition, CVD)(physical vapor deposition, CVD)-(Bottom up) (chemical vapor deposition, CVD)(physical vapor deposition, CVD)(Thermal CVD)(Photo-assisted CVD)(Plasma-assisted CVD)(evaporation)(sputtering)(ion plating)13-(Bottom up)(Chemical Vapour Deposition, CVD)

-(Bottom up)(Chemical Vapour Deposition, CVD)

(1)(2)(boundary layer)15-(Bottom up)(Chemical Vapour Deposition, CVD)

(homogeneous reaction)(heterogeneous reaction)(solid reaction)(diffusion zone)1.(zone 1)2.(zone 2)3.(zone 3, 5)4.(zone 4)1.2.CVD3.4.16-(Bottom up)(Plasma assisted CVD)

1.(plasma)2.3.ArArAr+(Argon)ArArAr+4.5.(cold plasma)500KK17-(Bottom up)(Plasma assisted CVD)

18-(Bottom up)

SiSi3N4-(Bottom up)(Physical Vapor Deposition, PVD)

(evaporation)(sputtering)(ion plating)(collisions)(jonizations)(condensation)(nucleation)PVD20

-(Bottom up)( Evaporator )

cold finger10-4 Torrcold finger

21

-(Bottom up)( Molecular Beam Epitaxy, MBE )-(Bottom up)( Molecular Beam Epitaxy, MBE )

MBEIII-V10-8~10-9Torr66%layer-by-layerlayerinterfacebulk interdiffusionislandMBE(in-situ)(RHHD)(surface reconstruction)MBE23

-(Bottom up)( Molecular Beam Epitaxy, MBE )

-(Bottom up)( Sputtering )

19

25-(Bottom up)( Sputtering )

(Lorentzs law)(B)(v)(q)F=qvB(m)(r) r=mv/qB()26-(Bottom up) ( precipitation )( sol-gel )( hydrothermal )( solvothermal )( radiolytic )( photochemical )( sonochemical )( laser ablation )( chemical reduction )( electrochemical )( thermal decomposition )( solvent extraction-reduction )(seed)(capping agent)(1)(electric double layer)(2)(gel network)(3)(protective agents)(coupling agents)27-(Bottom up)

(1)(2)(3)(4)(5)(6)(1)(2)(3)(4)(5)28-(Bottom up)

(amorphous)PHFe3O4(a)SrFe12O19(b)OH-CO32-C2O42-29-(Bottom up)(sol-gel)(sol)1~100nm

(gel)

(colloid sol)(polymeric sol)

-(sol-gel)(alkoxide)(alcoholate)(organic polymer)(monomer)(cross coupling agent)(organic solvent)(hydrolysis)(condensation)(polymerization)(sol)(gel)-

(colloid sol)(polymeric sol)(hydrolysis)(polycondensation)-- pH

30-(Bottom up)(sol-gel)

NiFe2O4

M:R:n:-OR-OH-OR(dehydration)(dealcoholation)

PH10nm

-(1) (2) (3) (4) (5) 31-(Bottom up)

(autoclave)(1)():(2)(3)ZrO2(a)(b)1. PH32-(Bottom up)

160oC(a)pyridine(b)12hrCdS(1)(2)(3)(4)(5)(6)

-(Bottom up)

-(Bottom up)

g(1~2kHz)(cavitation)K-H-OH35-(Bottom up)

(cluster)()Nd:YAG-(Bottom up)

CuOAu (a) Cu (b) 37-(Bottom up)

(NaBH4, NaBEt3H, LiBet3H)(N3H4)38-(Bottom up)

PPV(polyvinylpyrrolidone)Pd (a) Ni (b) 78~80oC120~180oC(polyol process)(capping)

39-(Bottom up)

(a)PtPVPAg(b)CTABCu2+Cu2OPtPVPAgCTAB(cetyltrimethylamonium bromide)Cu2+Cu2OCTABCTAB40-(Bottom up)

()-(Bottom up)

Pd (a) Au (b)(a)(b)42-( self assemply )

(van der Waals)(Bottom up)43-(Bottom up)

FePt (a) Fe3O4 (b) (a)(b)

(a)(oleic acid) 1, 2-hexadecanediolPt(acac)2 (platinum acetylacetonate)Fe(CO)5(self-assamblly)FePt(b)oleylamineFe(acac)3Fe3O444-(Bottom up)

Au (a)Ag (b)(two phase)

(1)()(2)

()

45-(Bottom up)

//(reverse micelles)(wo)o(ms)(nanoreactors)AOT/heptane/waterAOT0.2Mo10100AOT2.3nm10200.05M1.4

46-(Bottom up)

Ni (a) SiO2 (b) (1)(2)(3)o

47-(Bottom up)

MCM-41PAMAM dendrimer

DNA

(1)(AAO)(2)CTABMCMSBA(1)(2)(dendrimer)(3)(di-block copolymer)48-(Bottom up)

Pt (a) PAMAM dendrimer Ni (b)(1)(2)(3)

49-( Vapor-Liquid-Solid VLS )

VLSVLS(eutectic point)50VLS( Vapor-Liquid-Solid )(A)(GAO)(a)15~40nm(b)15nm(c)7nm(B)-

-( template )

(a)AAM(b)AAM(anodic alumina membranes)AAMCVD(sol-gel)(reverse micell)(microemulsion or miniemulsion)(dendrimer)()(1)(2)(3)(4)

52

-( template )