AOD2N1001000V,2A N-Channel MOSFET

General Description Product Summary

1100V@150

ID (at VGS=10V) 2A

RDS(ON) (at VGS=10V) < 9Ω

100% UIS Tested!100% Rg Tested!

SymbolVDS

The AOD2N100 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliverhigh levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along withguaranteed avalanche capability this part can be adoptedquickly into new and existing offline power supplydesigns.

VDS

VUnitsParameter

Absolute Maximum Ratings T A=25°C unless otherwise notedMaximum

Drain-Source Voltage 1000

G

D

SG

S

D

G

S

D

Top View

TO252

DPAK

Bottom View

AOD2N100

VDS

VGS

IDM

IAR

EAR

EAS

Peak diode recovery dv/dt dv/dt

TJ, TSTG

TL

SymbolRθJA

RθCS

RθJC

Maximum Case-to-sink A

Maximum Junction-to-CaseD,F °C/W°C/W

1.20.51.5

mJ

Avalanche Current C

54Repetitive avalanche energy C

Derate above 25oC

83

0.7

A1.9

Single pulsed avalanche energy H 108 mJV/ns5

PD

VDrain-Source Voltage 1000

V±30Gate-Source Voltage

TC=100°C AID

TC=25°C 2

1.2

7Pulsed Drain Current C

Continuous DrainCurrentB

°C

Junction and Storage Temperature Range -50 to 150 °C

Power Dissipation B

Maximum Junction-to-Ambient A,G

TC=25°C

-

55Maximum

Thermal CharacteristicsUnits°C/W45

Parameter Typical

W

W/ oC

Maximum lead temperature for solderingpurpose, 1/8" from case for 5 seconds 300

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AOD2N100

Symbol Min Typ Max Units

1000

1100BVDSS

/∆TJ1 V/ oC

1

10

IGSS Gate-Body leakage current ±100 nΑVGS(th) Gate Threshold Voltage 3.3 4 4.5 V

RDS(ON) 7.5 9 ΩgFS 2 S

VSD 0.76 1 V

IS Maximum Body-Diode Continuous Current 2 A

ISM 7 A

Ciss 380 477 580 pF

Coss 20 31 45 pF

Crss 1.5 2.7 4.0 pF

Rg 1.5 3.1 4.8 Ω

Qg 6 9.7 15 nC

Qgs 2.6 nC

Qgd 3.5 nC

tD(on) 20 ns

tr 19 ns

tD(off) 29 ns

Static Drain-Source On-Resistance VGS=10V, ID=1A

Reverse Transfer Capacitance

VGS=0V, VDS=25V, f=1MHz

SWITCHING PARAMETERS

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=500V, ID=2A,RG=25Ω

Electrical Characteristics (T J=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter Conditions

BVDSS

µA

V

Zero Gate Voltage Drain Current ID=250µA, VGS=0V

VDS=0V, VGS=±30V

Drain-Source Breakdown VoltageID=250µA, VGS=0V, TJ=25°C

ID=250µA, VGS=0V, TJ=150°C

IDSS Zero Gate Voltage Drain CurrentVDS=1000V, VGS=0V

Gate Drain Charge

VDS=5V, ID=250µA

VDS=800V, TJ=125°C

IS=1A,VGS=0V

VDS=40V, ID=1AForward Transconductance

DYNAMIC PARAMETERS

Diode Forward Voltage

Gate resistance VGS=0V, VDS=0V, f=1MHz

Total Gate ChargeVGS=10V, VDS=800V, ID=2AGate Source Charge

Maximum Body-Diode Pulsed Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

tD(off) 29 ns

tf 21 ns

trr 220 287 350 nsQrr 1.5 2.2 3.0 µC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

IF=2A,dI/dt=100A/µs,VDS=100V

Turn-Off DelayTime G

Turn-Off Fall Time

Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/µs,VDS=100VBody Diode Reverse Recovery Time

A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.H. L=60mH, IAS=1.9A, VDD=150V, RG=10Ω, Starting TJ=25°C

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AOD2N100

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0

0.5

1

1.5

2

2.5

3

0 5 10 15 20 25 30

I D(A

)

VDS (Volts)Fig 1: On-Region Characteristics

VGS=5V

6.5V

10V

6V

5.5V

0.1

1

10

2.00 4.00 6.00 8.00 10.00

I D(A

)

VGS(Volts)Figure 2: Transfer Characteristics

-55°CVDS=40V

25°C

125°C

0

3

6

9

12

15

18

0 1 2 3 4 5

RD

S(O

N)( ΩΩ ΩΩ

)

ID (A)Figure 3: On-Resistance vs. Drain Current and Gate

Voltage

VGS=10V

0

0.5

1

1.5

2

2.5

3

-100 -50 0 50 100 150 200

Nor

mal

ized

On-

Res

ista

nce

Temperature (°C)Figure 4: On-Resistance vs. Junction Temperature

VGS=10VID=1A

40

1E-04

1E-03

1E-02

1E-01

1E+00

1E+01

1E+02

0 0.2 0.4 0.6 0.8 1

I S(A

)

VSD (Volts)Figure 6: Body-Diode Characteristics

25°C

125°C

ID=30A

25°

125°

Voltage

0.8

0.9

1

1.1

1.2

-100 -50 0 50 100 150 200

BV

DS

S(N

orm

aliz

ed)

TJ (oC)Figure 5: Break Down vs. Junction Temperature

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AOD2N100

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0

3

6

9

12

15

0 3 6 9 12 15

VG

S(V

olts

)

Qg (nC)Figure 7: Gate-Charge Characteristics

VDS=800VID=2A

1

10

100

1000

10000

0.1 1 10 100

Cap

acita

nce

(pF

)

VDS (Volts)Figure 8: Capacitance Characteristics

Ciss

Coss

Crss

0.01

0.1

1

10

100

1 10 100 1000 10000

I D(A

mps

)

VDS (Volts)Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

10µs

10ms

1msDC

RDS(ON) limited

TJ(Max)=150°CTC=25°C

100µs

0

200

400

600

800

1000

0.0001 0.001 0.01 0.1 1 10

Pow

er (

W)

Pulse Width (s)Figure 10: Single Pulse Power Rating Junction -to-

TJ(Max)=150°CTC=25°C

Operating Area (Note F)Figure 10: Single Pulse Power Rating Junction -to-

Case (Note F)

0.01

0.1

1

10

1E-05 0.0001 0.001 0.01 0.1 1 10 100

Zθθ θθJ

CN

orm

aliz

ed T

rans

ient

T

herm

al R

esis

tanc

e

Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

D=Ton/TTJ,PK=TC+PDM.ZθJC.RθJC

RθJC=1.5°C/W

In descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Single PulseTon

T

PD

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AOD2N100

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0

20

40

60

80

100

0 25 50 75 100 125 150

Pow

er D

issi

patio

n (W

)

TCASE (°C)Figure 12: Power De-rating (Note B)

0

0.5

1

1.5

2

2.5

3

0 25 50 75 100 125 150

Cur

rent

rat

ing

ID(A

)

TCASE (°C)Figure 13: Current De-rating (Note B)

0

100

200

300

400

0.0001 0.001 0.01 0.1 1 10 100 1000

Pow

er (

W)

Pulse Width (s)

TJ(Max)=150°CTA=25°C

Pulse Width (s)Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)

0.001

0.01

0.1

1

10

1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000

Zθθ θθJ

AN

orm

aliz

ed T

rans

ient

T

herm

al R

esis

tanc

e

Pulse Width (s)Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)

D=Ton/TTJ,PK=TA+PDM.ZθJA.RθJA

RθJA=55°C/W

In descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Single PulseTon

T

PD

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AOD2N100

-

+VDC

Ig

Vds

DUT

-

+VDC

Vgs

Vgs

10V

Qg

Qgs Qgd

Charge

Gate Charge Test Circuit & Waveform

-

+VDC

DUT VddVgs

Vds

Vgs

RL

Rg

Vgs

Vds

10%

90%

Resistive Switching Test Circuit & Waveforms

t t rd(on)

t on

t d(off) t f

toff

VddVgs

Id

+VDC

L

Vgs

Vds

BV

I

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

Vds

AR

DSS

2E = 1/2 LI ARAR

VddVgs

Vgs

Rg

DUT

-VDC

Id

Vgs

I

Ig

Vgs-

+VDC

DUT

L

Vgs

Vds

IsdIsd

Diode Recovery Test Circuit & Waveforms

Vds -

Vds +

IF

AR

dI/dt

IRM

rr

VddVdd

Q = - Idt

trr

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