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This is information on a product in full production.
March 2014 DocID023012 Rev 3 1/12
STT6N3LLH6
N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™ Power MOSFET in a SOT23-6L package
Datasheet - production data
Figure 1. Internal schematic diagram
Features
• RDS(on) * Qg industry benchmark• Extremely low on-resistance RDS(on)• High avalanche ruggedness• Low gate drive power losses
Applications• Switching applications
DescriptionThis device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
SOT23-6L
12
365
4
Order code VDSS RDS(on) max ID PTOT
STT6N3LLH6 30 V
0.025 Ω (VGS= 10 V)
6 A 1.6 W0.036 Ω
(VGS= 4.5 V)
Table 1. Device summary
Order code Marking Package Packaging
STT6N3LLH6 STG1 SOT23-6L Tape and reel
www.st.com
http://www.st.com
Contents STT6N3LLH6
2/12 DocID023012 Rev 3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
DocID023012 Rev 3 3/12
STT6N3LLH6 Electrical ratings
12
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage 30 V
VGS Gate-source voltage ± 20 V
ID Drain current (continuous) at Tpcb = 25 °C 6 A
ID Drain current (continuous) at Tpcb = 100 °C 3.75 A
IDM (1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 24 A
PTOT Total dissipation at TC = 25 °C 1.6 W
Derating factor 0.013 W/°C
Tstg Storage temperature -55 to 150 °C
Tj Max. operating junction temperature 150 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
Rthj-pcb(1)
1. When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec
Thermal resistance junction-pcb max 78 °C/W
Electrical characteristics STT6N3LLH6
4/12 DocID023012 Rev 3
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSSDrain-source breakdown Voltage
ID = 250 μA, VGS= 0 30 V
IDSSZero gate voltage drain current (VGS = 0)
VDS = 30 VVDS = 30 V, Tc = 125 °C
110
μAμA
IGSSGate body leakage current(VDS = 0)
VGS = ± 20 V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA 1 V
RDS(on)Static drain-source on- resistance
VGS = 10 V, ID = 3 A 0.021 0.025 Ω
VGS = 4.5 V, ID = 3 A 0.032 0.036 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VDS = 24 V, f=1 MHz, VGS = 0
- 283 - pF
Coss Output capacitance - 61 - pF
CrssReverse transfer capacitance
- 31 - pF
Qg Total gate charge VDD = 10 V, ID = 6 A
VGS = 4.5 VFigure 14
- 3.6 - nC
Qgs Gate-source charge - 1.5 - nC
Qgd Gate-drain charge - 1.1 - nC
Table 6. Switching on/off (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay timeVDD = 10 V, ID = 3 A, RG = 4.7 Ω, VGS = 4.5 VFigure 13
- 4.8 - ns
tr Rise time - 11.2 - ns
td(off) Turn-off delay time - 9.4 - ns
tf Fall time - 5.4 - ns
DocID023012 Rev 3 5/12
STT6N3LLH6 Electrical characteristics
12
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISDISDM
(1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)-
6
24
A
A
VSD(2)
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage ISD =6 A, VGS = 0 - 1.1 V
trr Reverse recovery time ISD = 6 A, di/dt = 100 A/μs,
VDD = 16 V, TJ=150 °CFigure 15
- 10.6 - ns
Qrr Reverse recovery charge - 2.8 - nC
IRRM Reverse recovery current - 0.5 - A
Electrical characteristics STT6N3LLH6
6/12 DocID023012 Rev 3
2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance
ID
10
1
0.1
0.1 1 VDS(V)10
(A)
Opera
tion in
this ar
ea is
Limited
by ma
x RDS
(on)
100ms
10msTj=150°CTc=25°C
Singlepulse
1s
0.01
100
AM15373v1
10-4 10-210-3 10
-1 10 101 10
2 t (s)p
10-3
10-2
10-1
10
K
0.02
0.05
0.1
0.2
s=0.5
Single pulse
0.01
Zthj-pcb=K*Rthj-pcb,Rthj-pcb=78 C/W
0
AM15363v1
ID
12
8
4
00 1 VDS(V)3
(A)
2
16
20
3V
4VVGS=5, 6, 7, 8, 9, 10V
4
AM15361v1 ID
16
12
4
00 3 VGS(V)
(A)
1
20
8
2
VDS=3 V
4
AM15369v1
VGS
6
4
2
00 2 Qg(nC)
(V)
8
4 6
10
VDD=10V
ID=6A
AM15358v1RDS(on)
15
10
5
02 10 ID(A)
(mΩ)
6
20
25
4 8 12
VGS= 4.5 V
30
35
40
AM15372v1
DocID023012 Rev 3 7/12
STT6N3LLH6 Electrical characteristics
12
Figure 8. Capacitance variations Figure 9. Normalized on-resistance vs temperature
Figure 10. Normalized gate threshold voltage vs temperature
Figure 11. Normalized V(BR)DSS vs temperature
Figure 12. Source-drain diode forward characteristics
C
100
10 10 VDS(V)
(pF)
20
Ciss
Coss
Crss
10
f= 1 MHz
AM15370v1 RDS(on)
1.2
1
0.4
00-55 -5 TJ(°C)
(norm)
-30 7020 45 95
0.2
0.6
0.8
1.4
1.6
120
ID= 3 A
VGS= 10 V
145
1.8
AM15360v1
VGS(th)
0.6
0.4
0.2
0-55 -5 TJ(°C)
(norm)
-30
0.8
7020 45 95 120
ID =250 µA
145
1
1.2
AM15368v1 V(BR)DSS
-55 -5 TJ(°C)
(norm)
-30 7020 45 950.8
0.85
0.9
0.95
1
1.1
1.15
1.05
ID = 1mA
120
AM15364v1
VSD
0 4 ISD(A)
(V)
2 106 80.2
0.3
0.4
0.5
0.6
0.7
TJ=-55°C
TJ=150°C
TJ=25°C
0.8
0.9
1
AM15365v1
Test circuits STT6N3LLH6
8/12 DocID023012 Rev 3
3 Test circuits
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 16. Unclamped inductive load test circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF3.3μF
VDD
AM01469v1
VDD
47kΩ 1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX2200μF
PW
IG=CONST100Ω
100nF
D.U.T.
VG
AM01470v1
AD
D.U.T.
SB
G
25 Ω
A A
BB
RG
G
FASTDIODE
D
S
L=100μH
μF3.3 1000
μF VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200μF
3.3μF VDD
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tftr
90%
10%
10%
0
0
90%
90%
10%
VGS
DocID023012 Rev 3 9/12
STT6N3LLH6 Package mechanical data
12
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
Figure 19. SOT23-6L package drawing
7049714_K_FU
http://www.st.com
Package mechanical data STT6N3LLH6
10/12 DocID023012 Rev 3
Figure 20. SOT23-6L recommended footprint(a)
Table 8. SOT23-6L package mechanical data
Dim.mm
Min. Typ. Max.
A 1.25
A1 0.00 0.15
A2 1.00 1.10 1.20
b 0.36 0.50
C 0.14 0.20
D 2.826 2.926 3.026
E 1.526 1.626 1.726
e 0.90 0.95 1.00
H 2.60 2.80 3.00
L 0.35 0.45 0.60
θ 0° 8°
a. All dimensions are in millimeters
7049714_K_footprint_FU
DocID023012 Rev 3 11/12
STT6N3LLH6 Revision history
12
5 Revision history
Table 9. Document revision history
Date Revision Changes
11-Oct-2012 1 First release.
24-Oct-2013 2Modified: RDS(on) value on : Features table and in Table 4.Document status promoted from preliminary to production data.
11-Mar-2014 3Updated Section 4: Package mechanical data.Minor text changes
STT6N3LLH6
12/12 DocID023012 Rev 3
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Figure 1. Internal schematic diagramTable 1. Device summary1 Electrical ratingsTable 2. Absolute maximum ratingsTable 3. Thermal resistance
2 Electrical characteristicsTable 4. StaticTable 5. DynamicTable 6. Switching on/off (inductive load)Table 7. Source drain diode2.1 Electrical characteristics (curves)Figure 2. Safe operating areaFigure 3. Thermal impedanceFigure 4. Output characteristicsFigure 5. Transfer characteristicsFigure 6. Gate charge vs gate-source voltageFigure 7. Static drain-source on-resistanceFigure 8. Capacitance variationsFigure 9. Normalized on-resistance vs temperatureFigure 10. Normalized gate threshold voltage vs temperatureFigure 11. Normalized V(BR)DSS vs temperatureFigure 12. Source-drain diode forward characteristics
3 Test circuitsFigure 13. Switching times test circuit for resistive loadFigure 14. Gate charge test circuitFigure 15. Test circuit for inductive load switching and diode recovery timesFigure 16. Unclamped inductive load test circuitFigure 17. Unclamped inductive waveformFigure 18. Switching time waveform
4 Package mechanical dataFigure 19. SOT23-6L package drawingTable 8. SOT23-6L package mechanical dataFigure 20. SOT23-6L recommended footprint
5 Revision historyTable 9. Document revision history