24N60C3 Pwr Xistor

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    SPW24N60C3

    CoolMOSTM

    Power Transistor

    Features

    New revolutionary high voltage technology

    Ultra low gate charge

    Periodic avalanche rated

    Extreme dv/dt rated

    Ultra low effective capacitances

    Improved transconductance

    Maximum ratings, at Tj=25 C, unless otherwise specified

    Parameter Symbol Conditions Unit

    Continuous drain current ID TC=25 C A

    TC=100 C

    Pulsed drain current1) ID,pulse TC=25 C

    Avalanche energy, single pulse EAS ID=12.1 A,VDD=50 V 780 mJ

    Avalanche energy, repetitive tAR1),2) EAR ID=24.3 A, VDD=50 V

    Avalanche current, repetitive tAR1) IAR A

    Drain source voltage slope dv/dtID=24.3 A,

    VDS=480 V, Tj=125 CV/ns

    Gate source voltage VGS static V

    VGS AC (f>1 Hz)

    Power dissipation Ptot TC=25 C W

    Operating and storage temperature Tj, Tstg C

    1.5

    24.3

    50

    Value

    24.3

    15.4

    72.9

    20

    30

    240

    -55 ... 150

    VDS @ Tj,max 650 V

    RDS(on),max 0.16

    ID 24.3 A

    Product Summary

    Type Package Ordering Code Marking

    SPW24N60C3 P-TO247 Q67040-S4640 24N60C3

    P-TO247

    Rev. 1.0 page 1 2004-04-27

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    SPW24N60C3

    Parameter Symbol Conditions Unit

    min. typ. max.

    Thermal characteristics

    Thermal resistance, junction - case RthJC - - 0.52 K/W

    RthJA leaded - - 62

    Soldering temperature Tsold1.6 mm (0.063 in.)

    from case for 10 s- - 260 C

    Electrical characteristics, at Tj=25 C, unless otherwise specified

    Static characteristics

    Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=250 A 600 - - V

    Avalanche breakdown voltage V(BR)DS VGS=0 V, ID=24.3 A - 700 -

    Gate threshold voltage VGS(th) VDS=VGS, ID=1.2 mA 2.1 3 3.9

    Zero gate voltage drain current IDSSVDS=600 V, VGS=0 V,

    Tj=25 C- 0.1 1 A

    VDS=600 V, VGS=0 V,

    Tj=150 C- - 100

    Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 100 nA

    Drain-source on-state resistance RDS(on)VGS=10 V, ID=15.4 A,

    Tj=25 C- 0.14 0.16

    VGS=10 V, ID=15.4 A,

    Tj=150 C- 0.34 -

    Gate resistance RG f=1 MHz, open drain - 0.7 -

    Transconductance gfs|VDS|>2|ID|RDS(on)max,

    ID=15.4 A- 24 - S

    Values

    Thermal resistance, junction -

    ambient

    Rev. 1.0 page 2 2004-04-27

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    SPW24N60C3

    Parameter Symbol Conditions Unit

    min. typ. max.

    Dynamic characteristics

    Input capacitance Ciss - 2800 - pF

    Output capacitance Coss - 930 -

    Reverse transfer capacitance Crss - 66 -

    Effective output capacitance, energy

    related3) Co(er) - 114 -

    Effective output capacitance, timerelated

    4) Co(tr) - 204 -

    Turn-on delay time td(on) - 13 - ns

    Rise time tr - 21 -

    Turn-off delay time td(off) - 73 -

    Fall time tf - 6 -

    Gate Charge Characteristics

    Gate to source charge Q gs - 15 - nC

    Gate to drain charge Q gd - 49 -

    Gate charge total Q g - 105 137

    Gate plateau voltage Vplateau - 5.4 - V

    4)Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

    Values

    VGS=0 V, VDS=25 V,

    f=1 MHz

    VDD=480 V,

    VGS=10 V, ID=24.3 A,

    RG=3.3

    VDD=480 V,

    ID=24.3 A,

    VGS=0 to 10 V

    VGS=0 V, VDS=0 V

    to 480 V

    1)Pulse width limited by maximum temperature Tj,max only

    2)Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.

    3)

    Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

    Rev. 1.0 page 3 2004-04-27

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    Parameter Symbol Conditions Unit

    min. typ. max.

    Reverse Diode

    Diode continuous forward current IS - - 24.3 A

    Diode pulse current IS,pulse - - 72.9

    Diode forward voltage VSDVGS=0 V, IF=24.3 A,

    Tj=25 C- 0.96 1.2 V

    Reverse recovery time trr - 600 - ns

    Reverse recovery charge Q rr - 13 - C

    Peak reverse recovery current Irrm - 70 - A

    Typical Transient Thermal Characteristics

    VR=480 V, IF=IS,

    diF/dt=100 A/s

    TC=25 C

    Values

    5)Cth6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if

    RthCA=0 K/W.

    Symbol Value Unit Symbol Value Unit

    typ. typ.

    Rth1 0.00705 K/W Cth1 0.000231 Ws/K

    Rth2 0.00972 Cth2 0.0014

    Rth3 0.0546 Cth3 0.00197

    Rth4 0.0906 Cth4 0.0112

    Rth5 0.133 Cth5 0.0612

    Cth6 4.45)

    Rev. 1.0 page 4 2004-04-27

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    SPW24N60C3

    1 Power dissipation 2 Safe operating area

    Ptot=f(TC) ID=f(VDS); TC=25 C; D =0

    parameter: tp

    3 Max. transient thermal impedance 4 Typ. output characteristics

    ID=f(VDS); Tj=25 C ID=f(VDS); Tj=25 C

    parameter: D=tp/T parameter: VGS

    0

    50

    100

    150

    200

    250

    0 40 80 120 160

    TC [C]

    Ptot[W]

    1 s

    10 s

    100 s

    1 ms

    10 ms

    DC

    103

    102

    101

    100

    102

    101

    100

    10-1

    VDS [V]

    ID

    [A]

    limited by on-state

    resistance

    single pulse0.01

    0.02

    0.05

    0.1

    0.2

    0.5

    100

    10-1

    10-2

    10-3

    10-4

    10-5

    10-6

    100

    10-1

    10-2

    10-3

    tp [s]

    ZthJC[K/W]

    4 V

    4.5 V

    5 V

    5.5 V

    6 V

    6.5 V

    7 V20 V

    0

    10

    20

    30

    40

    50

    60

    70

    80

    0 5 10 15 20

    VDS [V]

    ID[A]

    Rev. 1.0 page 5 2004-04-27

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    SPW24N60C3

    5 Typ. output characteristics 6 Typ. drain-source on-state resistance

    ID=f(VDS); Tj=150 C RDS(on)=f(ID); Tj=150 C

    parameter: VGS parameter: VGS

    7 Drain-source on-state resistance 8 Typ. transfer characteristics

    RDS(on)=f(Tj); ID=15.4 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|RDS(on)max

    parameter: Tj

    4 V 4.5 V 5 V 5.5 V

    6 V

    20 V

    0

    0.1

    0.2

    0.3

    0.4

    0.5

    0.6

    0.7

    0.8

    0 10 20 30 40

    ID [A]

    RDS(on)

    []

    typ

    98 %

    0

    0.1

    0.2

    0.3

    0.4

    0.5

    -60 -20 20 60 100 140 180

    Tj [C]

    RDS(on)[]

    25 C

    150 C

    0

    20

    40

    60

    80

    100

    0 2 4 6 8 10

    VGS [V]

    ID[A]

    4 V

    4.5 V

    5 V

    5.5 V

    6 V

    6.5 V

    7 V

    20 V

    0

    10

    20

    30

    40

    0 5 10 15 20

    VDS [V]

    ID

    [A]

    Rev. 1.0 page 6 2004-04-27

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    SPW24N60C3

    9 Typ. gate charge 10 Forward characteristics of reverse diode

    VGS=f(Q gate); ID=24.3 A pulsed IF=f(VSD)

    parameter: VDD parameter: Tj

    11 Avalanche SOA 12 Avalanche energy

    IAR=f(tAR) EAS=f(Tj); ID=12.1 A; VDD=50 V

    parameter: Tj(start)

    120 V 480 V

    0

    2

    4

    6

    8

    10

    12

    0 20 40 60 80 100 120

    Qgate [nC]

    VG

    S[V]

    0

    200

    400

    600

    800

    1000

    20 60 100 140 180

    Tj [C]

    EAS[mJ]

    25 C

    150 C

    25 C, 98%

    150 C, 98%

    102

    101

    100

    10-1

    0 0.5 1 1.5 2 2.5

    VSD [V]

    IF[A]

    125 C 25 C

    103

    102

    101

    100

    10-1

    10-2

    10-3

    0

    5

    10

    15

    20

    25

    tAR [s]

    IAV[A]

    Rev. 1.0 page 7 2004-04-27

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    SPW24N60C3

    13 Drain-source breakdown voltage 14 Typ. capacitances

    VBR(DSS)=f(Tj); ID=0.25 mA C=f(VDS); VGS=0 V; f=1 MHz

    15 Typ. Coss stored energy

    Eoss= f(VDS)

    540

    580

    620

    660

    700

    -60 -20 20 60 100 140 180

    Tj [C]

    VBR(DSS)[V]

    Ciss

    Coss

    Crss

    105

    104

    103

    102

    101

    0 100 200 300 400 500

    VDS [V]

    C[pF]

    0

    4

    8

    12

    16

    20

    0 100 200 300 400 500 600

    VDS [V]

    Eoss

    [J]

    Rev. 1.0 page 8 2004-04-27

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    SPW24N60C3

    Definition of diode switching characteristics

    P-TO247: Outline

    Dimensions in mm

    Rev. 1.0 page 9 2004-04-27

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    SPW24N60C3

    Published by

    Infineon Technologies AG

    Bereich KommunikationSt.-Martin-Strae 53

    D-81541 Mnchen

    Infineon Technologies AG 1999

    All Rights Reserved.

    Attention please!

    The information herein is given to describe certain components and shall not be considered as

    warranted characteristics.

    Terms of delivery and rights to technical change reserved.

    We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,regarding circuits, descriptions and charts stated herein.

    Infineon Technologies is an approved CECC manufacturer.

    Information

    For further information on technology, delivery terms and conditions and prices, please contact your

    nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide

    (see address list).

    Warnings

    Due to technical requirements, components may contain dangerous substances.

    For information on the types in question, please contact your nearest Infineon Technologies office.

    Infineon Technologies' components may only be used in life-support devices or systems with the

    expressed written approval of Infineon Technologies if a failure of such components can reasonably

    be expected to cause the failure of that life-support device or system, or to affect the safety or

    effectiveness of that device or system. Life support devices or systems are intended to be implanted

    in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,

    it is reasonable to assume that the health of the user or other persons may be endangered.

    Rev. 1.0 page 10 2004-04-27