24N60C3 Pwr Xistor

8/3/2019 24N60C3 Pwr Xistor

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SPW24N60C3

CoolMOSTM

Power Transistor

Features

New revolutionary high voltage technology

Ultra low gate charge

Periodic avalanche rated

Extreme dv/dt rated

Ultra low effective capacitances

Improved transconductance

Maximum ratings, at Tj=25 C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current ID TC=25 C A

TC=100 C

Pulsed drain current1) ID,pulse TC=25 C

Avalanche energy, single pulse EAS ID=12.1 A,VDD=50 V 780 mJ

Avalanche energy, repetitive tAR1),2) EAR ID=24.3 A, VDD=50 V

Avalanche current, repetitive tAR1) IAR A

Drain source voltage slope dv/dtID=24.3 A,

VDS=480 V, Tj=125 CV/ns

Gate source voltage VGS static V

VGS AC (f>1 Hz)

Power dissipation Ptot TC=25 C W

Operating and storage temperature Tj, Tstg C

1.5

24.3

50

Value

24.3

15.4

72.9

20

30

240

-55 ... 150

VDS @ Tj,max 650 V

RDS(on),max 0.16

ID 24.3 A

Product Summary

Type Package Ordering Code Marking

SPW24N60C3 P-TO247 Q67040-S4640 24N60C3

P-TO247

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Thermal characteristics

Thermal resistance, junction - case RthJC - - 0.52 K/W

RthJA leaded - - 62

Soldering temperature Tsold1.6 mm (0.063 in.)

from case for 10 s- - 260 C

Electrical characteristics, at Tj=25 C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=250 A 600 - - V

Avalanche breakdown voltage V(BR)DS VGS=0 V, ID=24.3 A - 700 -

Gate threshold voltage VGS(th) VDS=VGS, ID=1.2 mA 2.1 3 3.9

Zero gate voltage drain current IDSSVDS=600 V, VGS=0 V,

Tj=25 C- 0.1 1 A

VDS=600 V, VGS=0 V,

Tj=150 C- - 100

Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 100 nA

Drain-source on-state resistance RDS(on)VGS=10 V, ID=15.4 A,

Tj=25 C- 0.14 0.16

VGS=10 V, ID=15.4 A,

Tj=150 C- 0.34 -

Gate resistance RG f=1 MHz, open drain - 0.7 -

Transconductance gfs|VDS|>2|ID|RDS(on)max,

ID=15.4 A- 24 - S

Values

Thermal resistance, junction -

ambient

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Dynamic characteristics

Input capacitance Ciss - 2800 - pF

Output capacitance Coss - 930 -

Reverse transfer capacitance Crss - 66 -

Effective output capacitance, energy

related3) Co(er) - 114 -

Effective output capacitance, timerelated

4) Co(tr) - 204 -

Turn-on delay time td(on) - 13 - ns

Rise time tr - 21 -

Turn-off delay time td(off) - 73 -

Fall time tf - 6 -

Gate Charge Characteristics

Gate to source charge Q gs - 15 - nC

Gate to drain charge Q gd - 49 -

Gate charge total Q g - 105 137

Gate plateau voltage Vplateau - 5.4 - V

4)Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

Values

VGS=0 V, VDS=25 V,

f=1 MHz

VDD=480 V,

VGS=10 V, ID=24.3 A,

RG=3.3

VDD=480 V,

ID=24.3 A,

VGS=0 to 10 V

VGS=0 V, VDS=0 V

to 480 V

1)Pulse width limited by maximum temperature Tj,max only

2)Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.

3)

Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

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Reverse Diode

Diode continuous forward current IS - - 24.3 A

Diode pulse current IS,pulse - - 72.9

Diode forward voltage VSDVGS=0 V, IF=24.3 A,

Tj=25 C- 0.96 1.2 V

Reverse recovery time trr - 600 - ns

Reverse recovery charge Q rr - 13 - C

Peak reverse recovery current Irrm - 70 - A

Typical Transient Thermal Characteristics

VR=480 V, IF=IS,

diF/dt=100 A/s

TC=25 C

Values

5)Cth6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if

RthCA=0 K/W.

Symbol Value Unit Symbol Value Unit

typ. typ.

Rth1 0.00705 K/W Cth1 0.000231 Ws/K

Rth2 0.00972 Cth2 0.0014

Rth3 0.0546 Cth3 0.00197

Rth4 0.0906 Cth4 0.0112

Rth5 0.133 Cth5 0.0612

Cth6 4.45)

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SPW24N60C3

1 Power dissipation 2 Safe operating area

Ptot=f(TC) ID=f(VDS); TC=25 C; D =0

parameter: tp

3 Max. transient thermal impedance 4 Typ. output characteristics

ID=f(VDS); Tj=25 C ID=f(VDS); Tj=25 C

parameter: D=tp/T parameter: VGS

0

50

100

150

200

250

0 40 80 120 160

TC [C]

Ptot[W]

1 s

10 s

100 s

1 ms

10 ms

DC

103

102

101

100

102

101

100

10-1

VDS [V]

ID

[A]

limited by on-state

resistance

single pulse0.01

0.02

0.05

0.1

0.2

0.5

100

10-1

10-2

10-3

10-4

10-5

10-6

100

10-1

10-2

10-3

tp [s]

ZthJC[K/W]

4 V

4.5 V

5 V

5.5 V

6 V

6.5 V

7 V20 V

0

10

20

30

40

50

60

70

80

0 5 10 15 20

VDS [V]

ID[A]

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SPW24N60C3

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

ID=f(VDS); Tj=150 C RDS(on)=f(ID); Tj=150 C

parameter: VGS parameter: VGS

7 Drain-source on-state resistance 8 Typ. transfer characteristics

RDS(on)=f(Tj); ID=15.4 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|RDS(on)max

parameter: Tj

4 V 4.5 V 5 V 5.5 V

6 V

20 V

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0 10 20 30 40

ID [A]

RDS(on)

[]

typ

98 %

0

0.1

0.2

0.3

0.4

0.5

-60 -20 20 60 100 140 180

Tj [C]

RDS(on)[]

25 C

150 C

0

20

40

60

80

100

0 2 4 6 8 10

VGS [V]

ID[A]

4 V

4.5 V

5 V

5.5 V

6 V

6.5 V

7 V

20 V

0

10

20

30

40

0 5 10 15 20

VDS [V]

ID

[A]

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SPW24N60C3

9 Typ. gate charge 10 Forward characteristics of reverse diode

VGS=f(Q gate); ID=24.3 A pulsed IF=f(VSD)

parameter: VDD parameter: Tj

11 Avalanche SOA 12 Avalanche energy

IAR=f(tAR) EAS=f(Tj); ID=12.1 A; VDD=50 V

parameter: Tj(start)

120 V 480 V

0

2

4

6

8

10

12

0 20 40 60 80 100 120

Qgate [nC]

VG

S[V]

0

200

400

600

800

1000

20 60 100 140 180

Tj [C]

EAS[mJ]

25 C

150 C

25 C, 98%

150 C, 98%

102

101

100

10-1

0 0.5 1 1.5 2 2.5

VSD [V]

IF[A]

125 C 25 C

103

102

101

100

10-1

10-2

10-3

0

5

10

15

20

25

tAR [s]

IAV[A]

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SPW24N60C3

13 Drain-source breakdown voltage 14 Typ. capacitances

VBR(DSS)=f(Tj); ID=0.25 mA C=f(VDS); VGS=0 V; f=1 MHz

15 Typ. Coss stored energy

Eoss= f(VDS)

540

580

620

660

700

-60 -20 20 60 100 140 180

Tj [C]

VBR(DSS)[V]

Ciss

Coss

Crss

105

104

103

102

101

0 100 200 300 400 500

VDS [V]

C[pF]

0

4

8

12

16

20

0 100 200 300 400 500 600

VDS [V]

Eoss

[J]

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SPW24N60C3

Definition of diode switching characteristics

P-TO247: Outline

Dimensions in mm

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SPW24N60C3

Published by

Infineon Technologies AG

Bereich KommunikationSt.-Martin-Strae 53

D-81541 Mnchen

Infineon Technologies AG 1999

All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be considered as

warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices, please contact your

nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide

(see address list).

Warnings

Due to technical requirements, components may contain dangerous substances.

For information on the types in question, please contact your nearest Infineon Technologies office.

Infineon Technologies' components may only be used in life-support devices or systems with the

expressed written approval of Infineon Technologies if a failure of such components can reasonably

be expected to cause the failure of that life-support device or system, or to affect the safety or

effectiveness of that device or system. Life support devices or systems are intended to be implanted

in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,

it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 1.0 page 10 2004-04-27

Documents

24N60C3 Pwr Xistor