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Automotive Test SolutionsE-band Radar、MEMS and Wireless Charging Component Test OverviewE-band雷達、微機電系統及無線充電測試簡介
Kenny Liao
Senior Project Manager
AEO, Taiwan
2016/03/16
Page
Automotive Applications
Automotive Radar
CTD Automotive Test Solutions 2
High power impedance
In-Vehicle Mobile Device
Charging (WPT)
MEMS Sensors
Page
• Component Evaluation• MEMS Sensors
Automotive Solutions
3
Automotive RadarSemiconductor / Components Connected Car
• Wireless Power Transfer (WPT)
Analysis SW
• ENA Option TDR• E5052B Signal Source
Analyzer (SSA)
• mmWave Vector Network Analyzer
• Impedance Analyzers / LCR Meters
CTD Automotive Test Solutions
• Automotive Ethernet
• In-Vehicle Mobile Device Charging
(WPT)
• EMC
Page
What is a MEMS device?
MEMS Production Test Challenges
MEMS: Micro Electro Mechanical Systems
4
• MEMS is a miniaturized device that contain components of minute dimensions
(on the order of micometers) that work as a system
• Usually a system consists of one or more sensors, actuators, and control
electronics on a chip
• MEMS devices are energy transducers: they take mechanical or chemical
energy and transform it into electrical energy
• Some common applications include accelerometers, gyroscopes, and
microphones
Movable
Parttransducer
Electronic
Circuit
External
Circuit
MEMS ASIC
Page
MEMS Applications
MEMS Production Test Challenges 5
(noise cancellation and
voice recognition)
(motion sensing)
(ESC, airbag)
(TPMS)
(GPS)
“MEMS shipments on 28.4% CAGR,
says Semico” (July 8, 2015)
http://www.electronics-
eetimes.com/en/mems-shipments-on-
28.4-cagr-says-semico.html
"MEMS are growing in part as they
replace conventional non-MEMS
sensors in automotive and industrial
applications. Accelerometers and
microphones will account for the bulk of
these shipments."
Page
Pressure Sensor Accelerometer
Piezoelectric
Capacitive
MEMS Devices
MEMS Production Test Challenges
Piezoelectric element
detect capacitance change
6
Page
MEMS DevicesSilicon Microphone
MEMS Production Test Challenges 7
detect capacitance change
Page
MEMS CustomersTypical Customers
MEMS Production Test Challenges 8
Automotive MEMS Silicon Microphone
Packaged Suppliers Bare Die Suppliers
Page
MEMS Production Test Challenges
Test Challenges
• Low yield, because MEMS technology
involves working with very precise structures
which are fragile and many failure parts are
integrated into final packages
• Low throughput, because devices are tested
with mechanical stimulus (such as pressure
and acceleration)
• Low repeatability, because the stability of
mechanical stimulus is difficult to control
Solutions
CTD Automotive Test Solutions 9
• Use high speed tester
• Minimize the mechanical test, by
screening with on-wafer electrical test
• Use high accuracy tester
• Test as early as possible (on-wafer) to
lower production cost
• Use high repeatability tester
Page
Lowering Production Cost in Mass Production
MEMS Production Test Challenges
Stop bad dice before packaging to lower production cost
10
Testing as early in the process as possible is key to
lowering production cost
30 40 50 60 70 80 90 1005
10
15
20
25
30
35
40
with test
without test
pri
ce
of
go
od
co
mp
on
en
t
Yield/%
Production price per good component as a
function of the yield
Cost after dicing is about 80%
MEMS wafer Die
Dicing Packaging
Packaged
Device
ShipFinal
Test
CMOS
On-wafer testing effectively lowers production cost
Source: MEMUNITY www.memunity.org/on-wafer_testing.htm
Page
Lowering Production Cost in Mass Production
MEMS Production Test Challenges
On-wafer electrical tests results in faster, more accurate, and more repeatable results
11
On-wafer
Test
MEMS wafer Die
Dicing Packaging
Packaged
Device
ShipDie
TestFinal
Test
Process
Feedback
Process feedback is key to
lowering production cost.
CMOS
C-V test
E4980A LCR Meter
Leakage test
B2980A High Resistance Meter
Frequency response test
E4990A Impedance Analyzer
Micro-machining Verification
Measure the resistance between
the mass/membrane and the
frame. Well micro-machined chips
shows high resistance.
Static Performance
Sweep DC bias between the
electrodes and measure the
capacitance (C). The C-V curve is
a good measure of the static
mechanical performance of the
mass/membrane.
Dynamic Performance
Apply fixed DC bias between the
electrodes and measure the
impedance (Z). The Z is the
combination of the mechanical
impedance of the mass/membrane
and the C between the
mass/membrane and the frame.
Page
MEMS Production Test Challenges
Test Challenges
• Low yield, because MEMS technology
involves working with very precise structures
which are fragile and many failure parts are
integrated into final packages
• Low throughput, because devices are tested
with mechanical stimulus (such as pressure
and acceleration)
• Low repeatability, because the stability of
mechanical stimulus is difficult to control
Solutions
MEMS Production Test Challenges 12
• Use high speed tester
• Minimize the mechanical test, by
screening with on-wafer electrical test
• Use high accuracy tester
• Test as early as possible (on-wafer) to
lower production cost
• Use high repeatability tester
Page
DC Bias Voltage
Capacitance
C0
1.5C0
0
Capacitive MEMS Sensor Electrical Performance TestStatic Performance
Displacement
Capacitance
C0
1.5C0
0
Movable
electrode
Spring
Displacement
Damper
Mass
Capacitance
change
Fixed
electrode
Electrostatic
attraction
DC bias
voltage
Movable
electrode
Spring
Displacement
Damper
Mass
Capacitance
change
Fixed
electrode
Electrostatic
attraction
DC bias
voltage
MEMS Production Test Challenges 13
Capacitance-Voltage (C-V) measurement
Static physical input replaced by DC voltage bias sweep and
the electrostatic capacitance is measured, which is
equivalent to the static mechanical characteristic.
Faster and more accurate
physical stimulus
electrical stimulus
Page
E4980A LCR Meter
Capacitive MEMS Sensor Electrical Performance TestTest Considerations
MEMS Production Test Challenges 14
Most capacitive sensors have 0.5 to 1 pF capacitance at
the neutral position.
=> Test equipment needs to be capable of measuring
electrostatic capacitance accurately in the order of 0.1 pF
The AC test signal used for capacitance measurement
may actuate the electrodes of the DUT and cause errors.
=> Test frequency should be set much higher than the
mechanical operating frequency of the device under test.
Generally, the operating frequency of the MEMS device is in
the low kHz range, so a 1 MHz test frequency is sufficient.
Capacitive sensors have hysteresis characteristics based
on the amount of electrical charge being inducted to the
electrodes.
=> Caution must be exercised for DC voltage bias sweep
measurement
σ < 1 fF
2 MHz maximum frequency
Function available to turn off
DC bias ranging
Page
Capacitive MEMS Sensor Electrical Performance Test Accelerometer Static Performance Example
Courtesy of Murata Electronics Oy (formerly VTI Technologies)
MEMS Production Test Challenges 15
Page
Capacitive MEMS Sensor Electrical Performance TestDynamic Performance
MEMS Production Test Challenges 16
Dynamic physical input replaced by AC voltage
stimulus and the impedance vs frequency profile is
measured, which is equivalent to the mechanical
characteristics.
Movable
electrode
Spring
Displacement
Damper
Mass
Fixed
electrodeDC bias
voltage
AC Stimulus
Movable
electrode
Spring
Displacement
Damper
Mass
Fixed
electrodeDC bias
voltage
AC Stimulus
Model of the movable part of the electrode
(Electrostatic capacitance representing the electrode displacement)
Page
Capacitive MEMS Sensor Electrical Performance TestTest Considerations
MEMS Production Test Challenges 17
DC bias voltage function up to
40 V
Equivalent circuit analysis
function enables quick-and-
easy analysis of both dynamic
performance and electrostatic
capacitance evaluation
The movable part being driven by the AC voltage has
electrostatic force between the electrodes which may
cause measurement error.
=> Apply DC bias voltage to the AC test signal. When the
amplitude of the AC voltage is adequately smaller than that of
DC bias voltage, the error is negligible.
The measured impedance profile has both impedance
representing the dynamic performance and the
electrostatic capacitance representing the electrode
displacement.
=> Subtract the electrostatic capacitance to determine the
dynamic performance of the device itself.
E4990A Impedance Analyzer
Page
Additional ResourcesWebsites
• MEMS Application Portal http://www.keysight.com/find/mems/
• LCR Meters and Impedance Measurement Products http://www.keysight.com/find/impedance/
Brochure
• Accelerate Your MEMS Device Development and Manufacturing Efficiency Using Best-In-Class Impedance
Test Instruments Brochure (5989-7517EN)
Application Notes
• Impedance Measurement Handbook (5950-3000)
• MEMS On-wafer Evaluation in Mass Production (5989-7691EN)
• Accurate Evaluation of MEMS Piezoelectric Sensor and Actuator using the 4294A (5989-6516EN)
• Characterizing MEMS Magneto-Impedance Sensor using the Keysight Impedance Analyzer (5989-6517EN)
• Improving the Test Efficiency of the MEMS Capacitive Sensor using the E4980A (5989-6518EN)
• Characterizing Electromagnetic MEMS Optical Switch Actuator using the E4980A (5989-6519EN)
• Characterizing Electromagnetic MEMS Optical Scanner using the E4980A (5989-6520EN)
• Improving Test Efficiency of MEMS Electrostatic Actuator using the E4980A (5989-6521EN)
• Accurate Impedance Measurement with Cascade Microtech Probe System (5988-3279EN)
• Evaluation of MOS Capacitor Oxide C-V Characteristics Using the Agilent 4294A (5988-5102EN)
MEMS Production Test Challenges 18
Page
On-Wafer MEMS Sensor Test
MEMS Production Test Challenges
Lower your production costs with electrical test solutions
PC
Probe
Station
Switch Matrix
C-V Test
E4980A LCR Meter
Leakage Test
B2985A High Resistance Meter
Frequency Response Test
E4990A Impedance Analyzer
Probe Card
19
Test Station
Device
• Best-in-class accuracy (0.05%)
• Superb repeatability (σ<1fF)
• 40 Vmax built-in DC voltage source
• Fast (typically 5x faster than 4284A)
• 10 PΩ (10x1015Ω) measurement range
• High stability
• Fast (20,000 readings/s)
• ±40 Vmax built-in DC voltage source
• Resonance/Anti-Resonance, Q-Factor
Evaluation
• Equivalent Circuit Analysis
www.keysight.com/find/mems/
Page
• Component Evaluation• MEMS Sensors
Automotive Component Test Solutions
20
Automotive RadarSemiconductor / Components Connected Car
• Wireless Power Transfer (WPT)
Analysis SW
• ENA Option TDR• E5052B Signal Source
Analyzer (SSA)
• mmWave Vector Network Analyzer
• Impedance Analyzers / LCR Meters
CTD Automotive Test Solutions
• Automotive Ethernet
• In-Vehicle Mobile Device Charging
(WPT)
• EMC
mmW Component Evaluation for Automotive Radar
Page
Oscillator Phase Noise MeasurementE5052B Signal Source Analyzer (SSA)• Oscillator phase noise affects the clarity of the target
• Measure CW phase noise of automotive radar oscillator
• Ability to measure unstable oscillators, which can not be measured on a spectrum
analyzer
76 GHz Oscillator Phase Noise Measurement
CTD Automotive Test Solutions 22
Page
Automotive Radar Component TestingAnalog / Microwave Component Test
MM Tx
MM Rx
DAC AMP
AMPADC
VCO
LPF
AMP
LNA
Millimeter Section
AMP
Analog Section
Xn
23
Page
Automotive Radar Component Testing
Flexible signal routing
• Internal signal combiner
• Use for IMD, Hot S22, phase versus drive measurements
• Easily switch between one and two source measurements
• Front panel jumpers to access couplers and receivers
• Add high-power components for power amplifier
measurements
• Add reference mixer for mixer/converter measurements
• Rear-panel signal routing with mechanical switches
• Add signal-conditioning hardware like filters, amplifiers
• Add other test equipment to extend suite of measurements
Key Features Enabling Testing
24
Page
Automotive Radar Component TestingSingle Connection Multiple Measurements
Ch1: S-parameters
Ch6: Pulse profile
Ch3: Gain compression
Ch2: Two-tone IMD
Ch4: Noise figure
• Internal signal combiner (IMD, Hot S22, phase versus drive)
• Front panel jumpers to access couplers and receivers (power
amplifier, mixer)
• Rear-panel signal routing (signal-conditioning, other test
equipment)
CTD Automotive Test Solutions 25
PageAgenda
• Automotive Component Testing
• Analog / Microwave Component testing
• Solutions For Millimeter wave Component Testing
26
Page
Automotive Radar Component Testing
Millimeter Wave Component Testing
Millimeter wave Devices Millimeter wave Measurements
• Passive Devices
• Amplifiers
• Mixers
• Semiconductors
• Antennas
• Materials
MM Tx
MM Rx
DAC AMP
AMPADC
VCO
LPF
AMP
LNA
Millimeter Section
AMP
Analog Section
Xn
• S-Parameters (N-Port,Differential )
• Absolute power
• Gain compression
• Pulsed measurements
• Material parameters
• Time domain
27
Page
Network Analyzer is the measurement engine.
Optional Test Set Controller interfaces to modules
THz Frequency Extenders provide frequency conversion and signal coupling
HUAWEI PresentationPage 28
Automotive Radar Component testing
Vector Network Analyzer
Millimeter Wave Test Set controller
Frequency
Extenders
Device under test
Frequency
Extenders
Frequency
Extenders
Frequency
Extenders
Millimeter Wave Solution Architecture
28
Page
• Single-sweep over 10MHz-110GHz
• 2-port & 4-port options
• Uses 67GHz PNA-X
• Interface = 1mm coax
• Features
• Bias Tees
• Power leveling
• True differential drive
• Pulse measurements
• Mixer measurements
Automotive Radar Component TestingBroadband 10 MHz to 110 GHz Solution
29
Page
Automotive Radar Component testing Example Banded Millimeter Wave Solutions
PNA / PNA-X Banded Waveguide
Solution With Test Set Controller
Banded Waveguide solution Without
Test Controller
• Interfaces to WinCal to provide S-
Parameter and Power Cal
• Receiver levelling allows for
controlled power applied to DUT
at the probe tip
• Ability to make a single
connection measurement of on-
wafer components.
• Four port configuration for support
of True Mode measurements of
differential components.
30
Page
Automotive Radar Component testing Application Example for 77 GHz Automotive Component test
G
S
G
S
G
G
S
G
S
G
IN
GSGSG
100um
OUT
GSGSG
100um
V1
GSGSG 150um
V2
V3 V4
GSGSG
150um
RF
GSGSG
100um
OL
GSGSG
100um
PPGPP 100um
(Z-probe)
DC
GSGSG 100um
80 GHz Power Amplifier 80 GHz Mixer
31
Page
• Automotive Ethernet
• In-Vehicle Mobile Device Charging
(WPT)
• EMC
• Component Evaluation• MEMS Sensors
CTD Automotive Solutions
32
Automotive RadarSemiconductor / Components Connected Car
• Wireless Power Transfer (WPT)
Analysis SW
• ENA Option TDR• E5052B Signal Source
Analyzer (SSA)
• mmWave Vector Network Analyzer
• Impedance Analyzers / LCR Meters
CTD Automotive Test Solutions
Page
• BroadR-Reach is an Ethernet PHY standard
designed for use in automotive connectivity
applications. BroadR-Reach enables 100 Mbps data
transmission over one unshielded twisted pair
• The OPEN Alliance SIG is a special interest group
formed to establish BroadR-Reach as an open
standard.
Automotive Ethernet
CTD Automotive Test Solutions
BroadR-Reach - Optimized for a broad spectrum of ADAS and infotainment applications
33
Why single pair?
Cable harness is 3rd heaviest and 3rd most costly
component (behind engine and chassis)
•Reduces connectivity costs up to 80%
•Reduces cabling weight up to 30%
Source: CFI 1 Twisted Pair 100 Mbit/s Ethernet (1TPCE)
http://www.ieee802.org/3/cfi/0314_2/CFI_02_0314.pdf
Page
BroadR-Reach PHY Compliance Solutions
CTD Automotive Test Solutions
Link Segment Test Solution
34
TDR
Scope
Vector
Network
Analyzer
(VNA)
Frequency Domain
•Insertion Loss (Sdd21)
•Return Loss (Sdd11)
•Mode Conversion (TCT,
TCTL)
•Alien Crosstalk
(PSANEXT, PSAACRF)
BroadR-Reach link segment testing requires parametric measurements in both time and frequency
domains.
Traditional Solution New Solution
ALL parameters can be
measured with
ENA Option TDR
Time Domain
•Characteristic Impedance
(TDR)
One-box solution
Page
• Automotive Ethernet
• In-Vehicle Mobile Device Charging
(WPT)
• EMC
• Component Evaluation• MEMS Sensors
CTD Automotive Solutions
35
Automotive RadarSemiconductor / Components Connected Car
• Wireless Power Transfer (WPT)
Analysis SW
• ENA Option TDR• E5052B Signal Source
Analyzer (SSA)
• mmWave Vector Network Analyzer
• Impedance Analyzers / LCR Meters
CTD Automotive Test Solutions
Wireless Power TransferTest Solution Overview
Agenda
• WPT Introduction and Market Trends
• Visualize WPT Coupling Efficiency with the ENA Series Network
Analyzer
Page
What is Wireless Power / Charging?
38
Wireless power transfer (WPT) is the transmission of electrical power from a power
source to a consuming device without using discrete manmade conductors. It is a
generic term that refers to a number of different power transmission technologies
that use time-varying electromagnetic fields.
(Source: Wikipedia https://en.wikipedia.org/wiki/Wireless_power)
Wireless Power Transfer
Page
Wireless Power Transfer (WPT) Market Overview
• WPT market will increase
3x in revenue to $8.5B in
2018
• Market growth driven by
mobile terminals with 4x
growth in number by 2018
• Challenge: there are
currently conflicting
standards and multiple
alliances which are not
interoperable => multi-
mode solutions
forecast
forecast
Wireless Power Transfer 39
Page
Wireless Power Transfer (WPT) Market OverviewIn-Vehicle Mobile Device Charging
40
http://www.dbusiness.com/daily-news/Annual-2014/Visteon-Debuts-
Wireless-Charging-on-2015-Cadillac-ATS/
http://toyotanews.pressroom.toyota.com/releases/toyota+2013+avalon+fi
rst+qi+wireless+charging+dec19.htm
Wireless Power Transfer
Page
What types of wireless power transfer technologies exist?
Wireless Power Transfer 41
Inductive (tightly coupled – requires
precise alignment)
Magnetic Resonance (loosely coupled –
allows spatial freedom)
Overview
Frequency 10 kHz to several 100 kHz Several 100 kHz to several 10s of MHz
Transmit power Several W to several kW Several W to several kW
Transmit distance Short (Z: “mm”) Mid (Z: “cm”)
Efficiency 70 to 90% 40 to 60%
Cost Lowest Fair
Device placement flexibility No (* multi-coil designs only, which add cost) Yes
• Existing solutions are predominantly built
on inductive or magnetic resonance
technology
• Power efficiency is key parameter
• Lower efficiency of magnetic resonance
offset by better user experience
Page
Standard Bodies
WPC PMA A4WP
Logo
(Qi) (Power 2.0) (Rezence)
Technology Inductive Inductive Magnetic resonance
Frequency100 ~ 205 KHz
80 ~ 300 kHz205 ~ 300 KHz 6.78 MHz
Communication SystemIn-band load modulation
(bi-phase modulation)
In-band load modulation
(pulse frequency modulation)Bluetooth (BLE)
Max. Power Transfer
15 W (Low)
120 W (Medium)
2 kW (High)
5 W 70 W
Max. Transfer Distance 5 mm 50 mm
# of Device Charging Single Multiple
Key MembersPhilips, TI, Logitech, Fulton,
SANYOIEEE, Powermac, P&G
Broadcom, Qualcomm, Intel,
Samsung, Witricity
Members 216 companies 68 companies 124 companies
Wireless Power Transfer (WPT) Standards
• PMA & A4WP merged in Jun-15, announced new name “AirFuel Alliance” Nov-15
• WPC currently working on magnetic resonance spec
Wireless Power Transfer 42
Page
Keysight Taiwan WPT Forum (Sep 22, 2015)
12:40~13:20 報到暨展攤交流.
13:20~13:30 歡迎詞及簡介.
13:30~13:55 Qualcomm® WiPower™ Technology
Qualcomm, Jack Chen
13:55~14:20 PTU and PRU Design Challenges
iCirround, Boson Chuang
14:20~14:45 Overview of Wireless Charging Technologies
Gotrend, Benson Wang
14:45~15:10 Wireless Charging Turnkey Test Solutions
Keysight, Hidekazu Manabe
15:35~16:00 Multi-mode Wireless Charging Solutions
NXP, Rebecca Chen
16:00~16:25 Wireless Charging Applications and Markets
Avnet, Andy Yang
16:25~16:50 WPC Overview and Certification Process
SGS, Leo Hsu
16:50~17:15 Introduction of MR Technology and Standard
ETC, Roy Lin
Wireless Power Transfer 43
Agenda
• WPT Introduction and Market Trends
• Visualize WPT Coupling Efficiency with the ENA Series Network
Analyzer
Page
• PTU Output Impedance => Z ≠ 50 Ω
• PRU Impedance => ZL=R+jX
• Measurement System => 50 Ω
• Different impedances…
• What is the voltage?
current? efficiency?
WPT Measurement Challenges
45
PTU (Power Transmitter Unit)
Output Z ≠ 50 Ω
PRU (Power Receiver Unit)
Arbitrary load impedance ZL=R+jXLC resonant circuit
Measure in 50 Ω environment
DC
Supply
Rectifier
Load
Wireless Power Transfer
Page
Wireless Power Transfer Coupling EfficiencyOption 006 Wireless Power Transfer Analysis Software
46
Note:
• Available on E5072A / E5061B / E5063A with Win7 OS
• Not applicable for E5061B Options 1x7/2x7 (75 ohm) and 1x5 (T/R)
• Supports RCE measurements (specified by A4WP)
Port1 Port2
Device Under Test
LoadZ(Ω)=R+jX*Defined
by userMeasured
S-parameter(S11,S21,S12,S22)
Iin(A)
Vout(V)
Iout(A)
Vin(V)*Defined
by user
Pin Pout
Efficiency(%)=Real(Pout)/Real(Pin)x100
Zin(Ω)
Option 006 provides real-time analysis of voltage, current, and power transfer
efficiency of Wireless Power Transfer (WPT) coils and resonators, from 50 ohm S-
parameter measurements.
Wireless Power Transfer
• Intuitive WPT parameter display,
based on arbitrary load impedance
• Real-time power transfer efficiency
analysis
• Advanced 2D/3D simulation for
efficient determination of optimum load
impedance
Page
Option 006 Wireless Power Transfer Analysis
47
Modes of Operation
Source voltage and
load impedance can
be user defined
Display real-time measurement results of
power transfer efficiency. Resonator Coupling
Efficiency (RCE) measurements available.
Display simulated results in 2D/3D by
sweeping one or two of the following
parameters:
・ R
・ X
・ Frequency
Useful for R&D engineers to evaluate the
load impedance dependency.
Mode-1: Real-time analysis Mode-2: Advanced 2D/3D simulation
Measures up to four parameters at the same time
Select parameters for
analysis, including.
coupling efficiency.
Maximum power transfer efficiency
Wireless Power Transfer
Page
Power Receiver (Rx)
Power Transmitter (Tx)
VNA Test Items in WPT System
48
Power
Inverter
Power
Amp
Matching
CircuitTx Coil
Rx CoilRectifier,
DC-DCLoad
Coupling Efficiency
(Tx & Rx Coils/Resonators)
Loop Gain, Output Z
(DC-DC Converter)
S-parameters
(S11, S22, S21)
(High Power Amp)
Impedance (R, X)
(Matching Circuit,
Tx Coil/Resonator and Rx
Coil/Resonator including Load)
Impedance(R, X),
Inductance (L), Q
(Coils/Resonators)
Coupled Coils/Resonators
Compliance Test Requirements
Component Characterization
(provides additional value for R&D)
Capacitance (C)
(Matching Circuit)
Impedance(R, X),
Inductance (L), Q
(Coils/Resonators)
Wireless Power Transfer
Page
A4WPSpec Documents & Working Committees(WC)
49
Baseline System Spec (BSS)
Conformance Test Spec
Interoperability Test Spec (IOT)
ApplicationPhysical
Layer
Base Spec
Test Specs
Evaluation of PRU, PTU and BTLE
(e.g., power transfer/control, state transition, signaling)
Testing of overall system functions
(mimic real-world use cases, e.g.,
charging multi-devices, fault operation)
PTU Resonator
Acceptance Test
(RAT)
Qualification of new PTU
resonators (golden device
used in Conformance Test)
to be added into Approved
PTU Resonator List
Technical requirements for WPT systems such as behaviors and interfaces necessary for
ensuring interoperability.
RAT VNA Measurements:
4.1 RAT/ScanPattern/MinMaxX
4.2 RAT/ScanPattern/MinMaxZ21
4.4 RAT/ImpedanceBox (HPNA)
4.5 RAT/RCE
4.6 RAT/kandZ21 (informative)
4.7 RAT/QandL (informative)
Technology
Conformance &
Interoperability
WC (TCIWC)
Technical WC
(TWC)
Resonator
Administration WC
(RAWC)
PTU: Power Transmitting Unit
Wireless Power Transfer
Page
RAT HPNA Measurement4.6 RAT/ImpedanceBox
50
E5072A
This test characterizes the range of reflected Impedance to the PTU Resonator by
all valid RITs (approved Rx devices)
Wireless Power Transfer
Page
RAT TestingMethod of implementation (MOI) using Option 006
51
(Reserved for Ch1)
Ch2
2-port meas.
(MinMaxZ21*, RCE*)* Directly display above parameters
with Option 006
Ch1
1-port meas.
(MinMaxX, ImpedanceBox)
Ch3
1-/2-port meas.
(k*, Q* and L*)* Post processing is required
to calculate above parameters
Ch4
Wireless Power Transfer
Page
Tx
Rx
Option 006 Wireless Power Transfer Analysis
Demo
52Wireless Power Transfer
Page
ENA Selection Guide for WPT customers
53
Requirements Solutions for WPT customers List Price
For compliance tests (A4WP RAT)
High-power measurements
Reflected impedance test
Coupling efficiency test• E5072A-245/006*
4.5 GHz, $44K
For component characterization
Wireless power transfer analysis
Impedance analysis
Power integrity analysis• E5061B-3L5/005/006
3GHz, $42K
Affordable solution
Wireless power transfer analysis
• E5063A-205/006
500 MHz, $15K
(*) Option 006 is optional
Wireless Power Transfer
Page
Measurement Results VerificationMeasurement Setup and DUT
54Wireless Power Transfer
Page
Measurement Results VerificationADS Simulation Circuit
7.57 uH 1.74 uH
Efficiency
Calculation
Variables used in the circuit model are determined by actual
measurements using E4990A Impedance Analyzer.
Load Impedance:
R=10 Ohm, X=0 Ohm
Wireless Power Transfer 55
Page
Measurement Results VerificationWPT Analysis Software (E5061B Option 006) vs. ADS
Excellent correlation!
efficiency @ 6.78 MHz
= 85.5% (E5061B Option 006)
= 85.3% (ADS)
Wireless Power Transfer 56
Page
Measurement Results VerificationComparison among VNAs (E5072A/61B/63A)
Excellent correlation!
Wireless Power Transfer 57
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Three New A4WP Application Notes Available
Wireless Power Transfer 58
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Keysight InfiniiVision X-Series Oscilloscopes
Bandwidth Sample
Rate
Mem
(max)
Seg
Mem
Update
Rate
MSO
Option
Zone
Trig
Power
Option
2000X70 to 200
MHz2 GSa/s 1M Option 50k/sec 8-ch No No
3000X100 MHz to
1 GHz5 GSa/s 4M Std 1M/sec 16-Ch Yes Yes
4000X200 MHz to
1.5 GHz5 GSa/s 4M Std 1M/sec 16-Ch Yes Yes
6000X1 GHz to
6 GHz20 GSa/s 4M Std 500k/sec 16-Ch Yes Yes
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Wireless Power Transfer 59
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Keysight products for characterizing power supplies
B1506A Power Device Analyzer
InfiniiVision & Infiniium S-Series Oscilloscopes
PA2201A IntegraVision AC Power Analyzer
N6705B DC Power Analyzer
E5061B Network Analyzer
New!
Wireless Power Transfer 60
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