3.

2017

3.1CMOS

i) Qp pMOSFET

S S B VGSp VDDVi VDD VGSp 0

Qn nMOSFET SB VGSn

FET ON/OFF Vi

ii) Vi=L Ø pMOSFET VGSp ONØ nMOSFET VGS=0 OFF

Vi=HØ pMOSFET VGSp=0 OFFØ nMOSFET VGS= ON

Ø invertor NOT

Ø MOSFET complementary• CMOSFET CMOS

Ø

iii) CMOS

S.M. 2

iv)

0.0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V 5.0V0.0V

0.5V

1.0V

1.5V

2.0V

2.5V

3.0V

3.5V

4.0V

4.5V

5.0VV(n003)

Vi

VoVDD=5V

VDD/2

VDD/2

Vtp

VtnVDD

Rp

Rn

Vo=VDDRp/(Rp+Rn)

nMOS nMOS nMOSnMOS

pMOS pMOS pMOS

pMOS

V1

5V2

M1NMOS

M2PMOS .dc V2 0 5 0.01

LTspice

: AO6408, AO6407Ø nMOSFET pMOSFET

• nMOS: 0.012Ω• pMOS: 0.034Ω

0.0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V 5.0V0.0V

0.5V

1.0V

1.5V

2.0V

2.5V

3.0V

3.5V

4.0V

4.5V

5.0VV(n003)

Vi

Vo

M1AO6407

M2AO6408

V1

V2

5

.dc V1 0 5 0.01

v)

Ø nMOS, pMOS IDS-VDSVi 2

2 FETØ Vi Vo

IDSp

IDSn

VDSn-VDSp=VDDIDSn= -IDSpVGSn-VGSp=VDDVDSn=VoVGSn=Vi

• VDSp VDSn VDD

• IDSp IDSn• VGSp Vi=0V -VDDVi=VDD 0V

-5.0V -4.5V -4.0V -3.5V -3.0V -2.5V -2.0V -1.5V -1.0V -0.5V 0.0V-270uA

-240uA

-210uA

-180uA

-150uA

-120uA

-90uA

-60uA

-30uA

0uAId(M1)

0.0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V 5.0V0uA

30uA

60uA

90uA

120uA

150uA

180uA

210uA

240uA

270uAId(M1)

Vi=5V VGSn=5V

Vi=4.5V VGSn=4.5V

Vi=4V

Vi=3.5V

Vi=3V

Vi=2.5VVi=2VVi=1.5VVi=1V

Vi=0.5VVi=0V

Vi=0V VGSp=5V

Vi=0.5V VGSp=4.5V

Vi=1V

Vi=1.5V

Vi=2V

Vi=2.5V

Vi=3VVi=3.5V

Vi Vo

VDSn=Vo

Vi=4V

vi) Ø

→→

Ø• propagation delay time

tp VDD/2

-GND

0.0ps 0.5ps 1.0ps 1.5ps 2.0ps 2.5ps 3.0ps 3.5ps 4.0ps 4.5ps 5.0ps0.0V0.5V1.0V1.5V2.0V2.5V3.0V3.5V4.0V4.5V5.0V5.5V

V(n003)

0.0ps 0.5ps 1.0ps 1.5ps 2.0ps 2.5ps 3.0ps 3.5ps 4.0ps 4.5ps 5.0ps0.0V0.5V1.0V1.5V2.0V2.5V3.0V3.5V4.0V4.5V5.0V5.5V

V(n002)

Vi Vo

Ø C

0.0us 0.5us 1.0us 1.5us 2.0us 2.5us 3.0us 3.5us0.0V

0.5V

1.0V

1.5V

2.0V

2.5V

3.0V

3.5V

4.0V

4.5V

5.0VV(n002) V(n003)

V1

5V2

PULSE(0 5 0.5u 0.01p 0.01p 1u 2u 5)

M1NMOS

M2PMOS

C1

20p

.tran 4u

Time

V i, V

o

tpHL

tpLH

ViVo

M1AO6407

M2AO6408

V1

PULSE(0 5 5n 0.01n 0.01n 20n 40n 4)

V2

5

.tran 60nØ

0ns 5ns 10ns 15ns 20ns 25ns 30ns 35ns 40ns 45ns 50ns 55ns 60ns0.0V

0.5V

1.0V1.5V

2.0V

2.5V

3.0V

3.5V4.0V

4.5V

5.0VV(n002) V(n003)ViVo

Ø H→L Vi: L→H

t=0 VGD=0, VGS=VDD nMOSFET ON

IDn

CL1/2

VGD VtON FET VD

0 V

IDsat =K(VGS −Vtn )

2

2=K(VDD −Vtn )

2

2

tpHL =q

2IDsat=

CLVDDK(VDD −Vtn )

2

CL

Ø L→H

Ø

|Vt|

1

• swVo

|Vt|=1V

CL

1. t=0 CL VO=0V2. sw OFF VO=0V

VGD=0V Vt=-1V FETVGS= -

5V FET ONVGS

CL3. VO=|Vt| VGD=Vt

FET

4. VGD

2

• Vo

CL

1. t=0 CL VO=5VVGS=5V>Vt=1V FET ON

2. sw OFF VO=5VVGD=0V Vt=1V FET

CL

3. VO=VDD-Vt=4VVGD=Vt FET

4. VGD>Vt VGS>VtFET ON t→∞

VO=0V

3

• Vo

CL

1. t=0 CL VO=5VVGS=-5VVt=-1V FET

CL3. VO VGS

VO

4. VO=|Vt|=1VVGS=Vt=-1V

FET OFF body=S

t→∞ VO=1V

4

• Vo

CL

1. t=0 FET

CL

2. VO=4 V VGS=Vt=1VFET

OFFt→∞ VO=4V

5

• 1 4 Voexp

Vo [V]

5

t0

1

VGD=-1V

Vt

1 3

Vo [V]

5

t

FET OFF

0

1

VGS=-1V

Vt

exp

6

• CMOS nMOSFETpMOSFET

vii) Ø : L→H

•CVDD2

•WC=CVDD2/2

• pMOSCVDD2/2

Ø : H→L• WC nMOS

CL

IDp

CL

Ø H→L→H 1 CVDD2 [J]

Ø f [Hz] p=fCVDD2 [W]

Ø C=nCL+Cpd• n: • CL: • Cpd: 20pF

[W]=[J/s]p

n=3

Ø 1• C=30 pF, VDD=5 V, f=1 GHz p=75 μW

Ø 2• Core2 duo (intel, 2008 ):

45nm 2GHz, VDD=1V 108 4

p=2μW total 200W spec sheet 60W 100W

• ARM11: 0.4mW/MHz, 400MHz 0.16W

Core2 duo 500mW/MHz

VDD=1V 3µW

ARM

3.2TTL

• TTL Transistor-Transistor LogicØ

Ø BJTØ

Ø VCC=4.5V 5.5V

• TTLØ H 2.0V L 0.8VØ H 2.4V L 0.4V

3.4

MOSFET VDDBJT VCC

B

C

E

BJTB:C: E:

• TTL

Vo [V]

2

4

3

2

1

2.4

3.6

1.510.5

0.4

0.8 Vi [V]

0 1

5V

01

0

3.3

•

Ø S=L• |Vi-Vo|

•A

A

A

A

B Y

sw1

sw2

A=L SW1 ON Y=BA=H SW2 ON Y=B’

Y=A’B+AB’=A XOR BXOR: exclusive OR

3.4CMOS

• ICØ 74 TTL

• 7404: hex invertor 6• 74S04: Schottky• 74LS04: low power Schottky• 74HC04: high speed CMOS• 74AHC04: advanced high speed• 74VHC04: very high speed

Ø 4000 CMOS• 4069: hex invertor

Ø• 74 1962 Texas Instruments• 4000 1968 RCA

– MOSFET: 1959– CMOS 1963

SOIC

14pin DIP

~2cm

~0.8cm

• 74VHC04 hex invertorØ VCC=2V 5.5VØ

• VIH=0.7 VCC VCC=4.5V VIH=3.15V• VIL=0.3 VCC VCC=4.5V VIL=1.35V

Ø• VOH=3.94V• VOL=0.36V

TC74VHC04F/FT/FK

2007-10-01 3

DC Ta = 25°C Ta = 40~85°C

VCC

(V)

“H” VIH

2.0

3.0~

5.5

1.50

VCC ×

0.7

1.50

VCC ×

0.7

“L” VIL

2.0

3.0~

5.5

0.50

VCC ×

0.3

0.50

VCC ×

0.3

V

IOH = 50 A

2.0

3.0

4.5

1.9

2.9

4.4

2.0

3.0

4.5

1.9

2.9

4.4

“H” VOH VIN

= VIL

IOH = 4 mA

IOH = 8 mA

3.0

4.5

2.58

3.94

2.48

3.80

IOL = 50 A

2.0

3.0

4.5

0.0

0.0

0.0

0.1

0.1

0.1

0.1

0.1

0.1

“L” VOL VIN

= VIH

IOL = 4 mA

IOL = 8 mA

3.0

4.5

0.36

0.36

0.44

0.44

V

IIN VIN = 5.5 V or GND 0~

5.5 ±0.1 ±1.0 A

ICC VIN = VCC or GND 5.5 2.0 20.0 A

AC (input: tr = tf = 3 ns)

Ta = 25°C Ta = 40~85°C

VCC (V) CL (pF)

15 5.0 7.1 1.0 8.5

3.3 ± 0.3

50 7.5 10.6 1.0 12.0

15 3.8 5.5 1.0 6.5

tpLH

tpHL

5.0 ± 0.5

50 5.3 7.5 1.0 8.5

ns

CIN 4 10 10 pF

CPD ( ) 18 pF

: CPD IC

ICC (opr) = CPD·VCC·fIN + ICC/6 ( )

74VHC04

TC74VHC04F/FT/FK

2007-10-01 1

CMOS

TC74VHC04F,TC74VHC04FT,TC74VHC04FK Hex Inverter

TC74VHC04 CMOSCMOS CMOS

TTL Q&Q

3

( VCC

) 5.5 V

2 5 V 3 V

: tpd 3.8 ns ( ) (VCC 5 V) : ICC 2 A ( ) (Ta 25°C) : VNIH VNIL 28% VCC ( ) : tpLH tpHL : VCC (opr) 2~5.5 V : VOLP 0.8 V ( ) 74ALS04

TC74VHC04F

TC74VHC04FT

TC74VHC04FK

SOP14-P-300-1.27A : 0.18 g ( ) TSSOP14-P-0044-0.65A : 0.06 g ( ) VSSOP14-P-0030-0.50 : 0.02 g ( )

~10mm

~5mm

~4mm

• CMOS TTL

Vo [V]

4

3

2

1

CMOS TTL

0.4V L

0.8V L

2.4V H

2.0V H

0.36V

1.35V

3.94V

3.15V

H-L

3.15V3.94V

G1 G2

1.35V0.36V

0V

H

L

H

L

•Ø CMOS

Ø TTL

3.15V

3.94V0.79V

G1 G2

G1 H -0.79VG2 L

1.35V

0.36V

0.99V

G1 L +0.99VG1 H

• TTLCMOS TTL TTLCMOS

3.5

•

Ø

t

V

t

V

Buffer

Ø

•• LED

Ø

D

S

nMOS ON: 0VOFF:

sinkID nMOS

LEDON/OFF

LED10mA

TTL