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1-1
1
CMOS
1-2
CMOS
1-3
LSI : Large Scale Integrated Circuit
12 30cm)
1-4
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000 2010
1906 1946 ENIAC1947
1959
1962MOSFET
1971
pMOS nMOS CMOS
110
1001000
104
105
106
107
108
109
1010
1011
/
(nm)
1965Moore
15 1/10
3 4
1-5
SiO2
n+
n-p
n+
n+ n+
p p
MOSFET
FET: Field Effect Transistor)
(1947)
FET
LSI (1990 )
LSI CMOSFET
1980 1985 1990 1995 20001
10
100
CMOSuni-processor5 10
Bipolaruni-processor5 2
n+ : n
1-6
ENIAC
18,800
1,000,000 cm2 (60
150,000 W
~ 0.05 MIPS
0.12 cm2
1946
4004
1971
2,300
1 W
0.06 MIPS
Core 2 (Penryn)
2007
410,000,000
1.07 cm2
65W
12500 MIPS
http://en.wikipedia.org/wiki/ENIAC http://www.4004.com/ http://www.intel.co.jp/technology/45nm/index.htm?iid=tech_sil+45nm
1-7n MOSFET
Metal-Oxide-Semiconductor Field Effect Transistor
source= )gate
(drain= )
n+
p
n+
1-8
n+ n+
S G D
VGS +
P
SiO2/Si p
1-9
np
n
np
n
+Q
Q
(0V) (> 0V)
(0V)
(0V) (> 0V)
(1.3V)
n MOSFET
1-10
- =
- = 0V
p MOSFET
p+
n
p+
1-11
n+ n+
p
nMOSFET
pMOSFET
p+ p+
n
VD > VS
VD < VS
- -
1-12
p+ p+ p+n+ n+ n+
n
p
B S G D S G D B
CMOS (Complementary MOS)
nMOSFET pMOSFET
p n-WELL
nMOSFET VB nMOSFET
pMOSFET VB pMOSFET
nMOSFET VB pMOSFETVB nMOSFET
pMOSFET
nMOSFET pMOSFET
1-13
p+ p+ p+n+ n+ p+
n
p
B S G D S G D B
CMOS
nMOSFET pMOSFET
D
S
G
D
S
G
D
S
G
B
S
D
G
B
S
D
G
S
D
G
p n=
npn, pnp
1-14MOS
CMOS(Complementary Metal-Oxide-Semiconductor)
pMOSFET
nMOSFET
VDD:
VSS:
vIN VSS VSS
0
0
vOUT
VDD VDD
VDD VDD
VSS VSS
V V1V2
V = V1 V2
1-15MOS
CMOS (Complementary Metal-Oxide-Semiconductor)
vIN
vOUT
VDD
VDD
VSSVSS
VDD:
VSS:
vIN vOUT
1-16
1-17
12 30cm)
~ 1 cm
1-18
CZ
CZ
200mm60 100kg
1200mm
http://www.sumcosi.com/products/process/step_01.html
1-19
1-20
CVD (Chemical Vapor Deposition)
(SiO2)(Si3N4)
(Si)
O2, H2O
Si
SiO2
O2 O2
700-1000
tox
0.44tox
Si
1-21Photolithography
Si
1/5
1-22
RIE (Reactive Ion Etching)
+ +
+N
= 7 : 1 (25 )SiO2 100 nm/min
= 10 : 1 (25 ) SiO2 35 nm/min
= 100:1 Si 100 nm/min
X = 500:50:1 (50 )
Si 8~18 nm/min
( 160-180 ) Si3N4 5nm/min
KOH: = 4:6 Si 25 nm/min(111)
Al = 75:15:5:5
Al 50 nm/min
1-23
B, P, As
p n
B P, As
http://www1.ocn.ne.jp/~raichi/test/raichi/timp/timp.html
Si(700 -1000
1-24
p
n
LSI
(Al)
(SiO2)
1-25
p
n
(Al)
(SiO2)
1-26
p
n
(Al)
(SiO2)STI : shallow trench isolation
1-27
p
n
(Al)
(SiO2)
1-28
p
n
(Al)
(SiO2)
1-29
p
n
(Al)
(SiO2)
1-30
p
n
(Al)
(SiO2)
1-31
p
n
(Al)
(SiO2)
1-32
p
n
(Al)
(SiO2)
1-33
p
n
(Al)
(SiO2)
1-34
(nm
)1mm
SiSi
45nm
1-35
LDD(Lightly Doped Drain)pocket
Si3N4 self-aligned S/D contact
High-kSiO2 SiON, Al2O3, HfO2, ZrO2
Si
Si
SiGe
/
1-36
(nm
)
1mm
SiSi
45nm
6nm
6nm
2025LSI
Si 15
6nm
B. Doris, et al. (IBM),International Electron Device Meeting (IEDM) Technical Digest, 10.6, 2002
1-37LSI
n+ n+
pp+ p+
n
M1
M2
M3
M4
M5
M6
VIA