CO 2 Laser and Sn Droplet Target Development for EUVL We present the development status of the two key technologies that are the high-power RF-excited CO2 laser and the Sn droplet target developed at EUVA for a HVM Laser Produced Plasma EUV light source. Akira Endo, Hideo Hoshino, Tatsuya Ariga, Takashi Suganuma, Masato Moriya, Takayuki Yabu, Hiroshi Someya, Yoshifumi Ueno, Masaki Nakano, Takeshi Asayama, Tamotsu Abe, Hiroshi Komori, Georg Soumagne, Hakaru Mizoguchi, Akira Sumitani and Koichi Toyoda EUVA / Extreme Ultraviolet Lithography System Development Association Hiratsuka Research and Development Center, 1200 Manda, Hiratsuka, 254-8567 Japan [email protected] Abstract This work was supported by the New Energy and Industrial Technology Development Organization (NEDO), Japan. Summary • High power and short pulse RF-excited CO 2 MOPA laser performance: ü Output Power: 6 kW ü Pulse Width: 22 ns ü Repetition Rate: 100 kHz • Sn droplet supply ü High-speed droplet target demonstrated • EUV generation ü IF 40W EUV power (source power 110 W, 2pi sr, 2%bw) was produced with 5-kW CO2 laser and Sn rotating plate target • Next Step ü EUV generation with high power CO2 laser and high speed Sn droplet target High Power Short Pulse CO 2 Laser for LPP EUV Source Block Diagram Short Pulse (FWHM:15 ns) amplification performance Output power Beam quality High Power and Sort pulse RF-excited MOPA CO 2 laser for LPP EUV light source High-speed droplet generator 6 kw High Speed Sn Droplet Supply Sn droplet: Diameter 70 um, 50 mm from nozzle, position stability sigma 8 um IF 40W EUV power (source power 110 W, 2p sr, 2%bw) was produced from CO2 laser produced Sn plasma. EUV power : 40 W at IF (primary source to IF 34%) 110 W at primary source (2 pisr 2%bw) Irradiation condition: Target Rotating Sn plate Laser irradiation power 5 kW Conversion efficiency CE) 2.2 % EUV energy stability : 8% (3sigma, 50 pulse) EUV Generation

CO2 Laser and Sn Droplet Target Development for EUVL… · CO2 laser for LPP EUV light source High-speed droplet generator 6 kw High Speed Sn Droplet Supply Sn droplet: Diameter 70

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CO2 Laser and Sn Droplet Target Development for EUVL

We present the development status of the two key technologies that are the high-power RF-excited CO2 laser and the Sn droplet target developed at EUVA for a HVM LaserProduced Plasma EUV light source.

Akira Endo, Hideo Hoshino, Tatsuya Ariga, Takashi Suganuma, Masato Moriya, Takayuki Yabu, Hiroshi Someya, Yoshifumi Ueno, Masaki Nakano,Takeshi Asayama, Tamotsu Abe, Hiroshi Komori, Georg Soumagne, Hakaru Mizoguchi, Akira Sumitani and Koichi Toyoda

EUVA / Extreme Ultraviolet Lithography System Development AssociationHiratsuka Research and Development Center, 1200 Manda, Hiratsuka, 254-8567 Japan [email protected]

Abstract

This work was supported by the New Energy and Industrial TechnologyDevelopment Organization (NEDO), Japan.

Summary

• High power and short pulse RF-excited CO2 MOPAlaser performance:

ü Output Power: 6 kWü Pulse Width: 22 nsü Repetition Rate: 100 kHz

• Sn droplet supplyü High-speed droplet target demonstrated

• EUV generationü IF 40W EUV power (source power 110 W, 2pi sr, 2%bw) was

produced with 5-kW CO2 laser and Sn rotating platetarget

• Next Stepü EUV generation with high power CO2 laser and high

speed Sn droplet target

High Power Short Pulse CO2 Laser for LPP EUV Source

Block Diagram