©2001 Fairchild Semiconductor Corporation

www.fairchildsemi.com

Rev.1.0.1

Features• Precision fixed operating frequency (70kHz)• Low start-up current(typ. 100uA)• Pulse by pulse current limiting• Over Load protection• Over current protection• Over voltage protecton (Min. 25V)• Internal thermal shutdown function• Under voltage lockout• Internal high voltage sense FET• Latch mode

DescriptionThe SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed fre-quency oscillator, under voltage lock-out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shutdown protection, over voltage protection, and tempera-ture compensated precision current sources for loopcompen-sation and fault protection circuitry. Compared to discrete MOSFET and PWM controller or RCC solution, a SPS can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reli-ability. It has a basic platform well suited for cost-effective design in either a flyback converter or a forward converter.

TO-3P-5L

1. DRAIN 2. GND 3. VCC 4. FB 5. S/S

Internal Block Diagram

VO F F S E T

Sense

FET15V/9V

UVLO

Vref

2.5R

5uA

R

1mA

Good Logic

INTERNALBIAS

LEB++++

-

S

R

Q

OSCCLK

7.5V

ShutdownLatch

Power-on Reset/Auto-restart

Rsense

※ LEB : Leading Edge Blanking※ OCL : Over Current Limit

Vcc

GND

Drain

++++

-

14V

27V

++++

-OVP-out

OVP

S

RQ

3

2

1

VCC VREFVOLTAGE

LIMITCIRCUIT

OLP

OCL(VS=1.4V)

TSD(TJ=150)

OVP-out(VCC=27V)

VS

5V

Soft Start 5Feedback 4

KA5M0965QFairchild Power Switch(SPS)

KA5M0965Q

2

Absolute Maximum Ratings

Notes:1. Tj=25°C to 150°C2. Repetitive rating: Pulse width limited by maximum junction temperature3. L=20mH, VDD=50V, RG=27Ω, starting Tj=25°C

Characteristic Symbol Value Unit

Maximum Drain voltage (1) VD,MAX 650 V

Drain-Gate voltage (RGS=1MΩ) VDGR 650 V

Gate-source (GND) voltage VGS ±30 V

Drain current pulsed (2) IDM 36.0 ADC

Single pulsed avalanche energy (3) EAS 950 mJ

Continuous drain current (TC=25°C) ID 9.0 ADC

Continuous drain current (TC=100°C) ID 5.8 ADC

Maximum Supply voltage VCC,MAX 30 V

Input voltage range VFB −0.3 to VSD V

Total power dissipationPD (watt H/S) 170 W

Derating 1.33 W/°C

Operating ambient temperature TA −25 to +85 °C

Storage temperature TSTG −55 to +150 °C

KA5M0965Q

3

Electrical Characteristics (SFET part)(Ta = 25°C unless otherwise specified)

Note:Pulse test: Pulse width < 300µS, duty < 2%

Characteristic Symbol Test condition Min. Typ. Max. UnitDrain-source breakdown voltage BVDSS VGS=0V, ID=50µA 650 - - V

Zero gate voltage drain current IDSS

VDS=Max., Rating, VGS=0V - - 50 µA

VDS=0.8Max., Rating,VGS=0V, TC=125°C - - 200 mA

Static drain-source on resistance (note) RDS(ON) VGS=10V, ID=4.5A - 0.96 1.2 WForward transconductance (note) gfs VDS=50V, ID=4.5A 5.0 - - SInput capacitance Ciss

VGS=0V, VDS=25V,f=1MHz

- 1200 -pFOutput capacitance Coss - 135 -

Reverse transfer capacitance Crss - 25 -Turn on delay time td(on) VDD=0.5BVDSS, ID=9.0A

(MOSFET switchingtime are essentiallyindependent ofoperating temperature)

- 25 60

nSRise time tr - 75 160Turn off delay time td(off) - 130 270Fall time tf - 70 150

Total gate charge(gate-source+gate-drain) Qg

VGS=10V, ID=9.0A, VDS=0.8BVDSS

- 45 60nCGate-source charge Qgs - 8 -

Gate-drain (Miller) charge Qgd - 22 -

S 1R----=

KA5M0965Q

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Electrical Charcteristics (SFET part) (Continued) (Ta = 25°C unless otherwise specified)

NOTE:1. These parameters, although guaranteed, are not 100% tested in production2. These parameters, although guaranteed, are tested in EDS(water test) process3. These parameters are indicated Inductor current.

Characteristic Symbol Test condition Min. Typ. Max. Unit

UVLO SECTIONStart threshold voltage VSTART - 8.4 9 9.6 VStop threshold voltage VSTOP After turn on 14 15 16 VOSCILLATOR SECTIONInitial accuracy FOSC Ta=25°C 61 67 73 kHzFrequency change with temperature (2) - −25°C≤Ta≤+85°C - ±5 ±10 %Maximum duty cycle Dmax - 74 77 80 %FEEDBACK SECTIONFeedback source current IFB Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mAShutdown Feedback voltage VSD Vfb>6.5V 6.9 7.5 8.1 VShutdown delay current Idelay Ta=25°C, 5V≤Vfb≤VSD 4 5 6 µASOFT START SECTIONSoft Start Voltage VSS VFB =2V 4.7 5.0 5.3 VSoft Start Current ISS Sync & S/S=GND 0.8 1.0 1.2 mACURRENT LIMIT(SELF-PROTECTION)SECTIONPeak Current Limit IOVER Max. inductor current 5.28 6.00 6.72 APROTECTION SECTIONThermal shutdown temperature (Tj) (1) TSD - 140 160 - °COver voltage protection voltage VOVP VCC>24V 25 27 29 VTOTAL DEVICE SECTIONStart Up current ISTART VCC=14V - 0.1 0.17 mAOperating supply current (control part only) IOP VCC<28 - 7 12 mA

KA5M0965Q

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Typical Performance Characteristics

Figure 1. Output Characteristics Figure 2. Thansfer Characteristics

Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage

Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage

10-1 100 101

10-1

100

101

※ Note : 1. 250μ s Pulse Test 2. TC = 25

VGSTop : 15 V 10 V 8.0 V 7.5 V 7.0 V 6.5 V 6.0 V 5.5 VBottom : 5.0 V

I D , D

rain

Cur

rent

[A]

VDS , Drain-Source Voltage [V]2 4 6 8 10

10-1

100

101

※ Note 1. VDS = 50V 2. 250μ s Pulse Test

-55

150

25

I D ,

Dra

in C

urre

nt [

A]

VGS , Gate-Source Voltage [V]

0 2 4 6 8 10 12 14 160.8

0.9

1.0

1.1

1.2

1.3

VGS = 20V

VGS = 10V

RD

S(on

) , [ Ω

]D

rain

-Sou

rce

On-

Res

ista

nce

ID , Drain Current [A]0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

10-1

100

101

25150 ※ Note : 1. VGS = 0V 2. 250μ s Pulse Test

I DR

, Rev

erse

Dra

in C

urre

nt [

A]

VSD , Source-Drain Voltage [V]

10-1 100 1010

500

1000

1500

2000

2500

3000Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + Cgd

Crss = Cgd

※ Note ; 1. VGS = 0 V 2. f = 1 MHz

Crss

Coss

Ciss

Cap

acita

nces

[pF]

VDS, Drain-Source Voltage [V]0 5 10 15 20 25 30 35 40 45

0

2

4

6

8

10

12

VDS = 300V

VDS = 120V

VDS = 480V

※ Note : ID = 8.5 A

V GS,

Gat

e-S

ourc

e V

olta

ge [V

]

QG, Total Gate Charge [nC]

KA5M0965Q

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature

Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature

Figure 11. Thermal Response

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

※ Note : 1. V

GS = 0 V

2. ID = 250 μ A

BVDS

S, (

Norm

alize

d)Dr

ain-

Sour

ce B

reak

down

Vol

tage

TJ, Junction Temperature [oC]-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Note : 1. VGS = 10 V 2. ID = 6.0 A

RD

S(O

N),

(Nor

mal

ized

)D

rain

-Sou

rce

On-

Res

ista

nce

TJ, Junction Temperature [oC]

100 101 102 10310-1

100

101

102

10 µs

DC10 ms

1 ms

100 µs

Operation in This Area is Limited by R DS(on)

※ Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage [V]25 50 75 100 125 150

0

2

4

6

8

10

I D, D

rain

Cur

rent

[A]

TC, Case Temperature []

1 0 - 5 1 0 - 4 1 0 - 3 1 0 - 2 1 0 - 1 1 0 0 1 0 1

1 0 - 2

1 0 - 1

1 0 0

※ N o t e s : 1 . Z θ J C ( t ) = 0 . 7 5 / W M a x . 2 . D u t y F a c t o r , D = t 1 / t 2 3 . T J M - T C = P D M * Z θ J C ( t )

s in g le p u ls e

D = 0 . 5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

Z θJ

C(t),

Th

erm

al

Re

sp

on

se

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

KA5M0965Q

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typical performance characteristics (control part)(These characteristic graphs are normalized at Ta = 25°C)

Fig.1 Operating Frequency

0.80.850.9

0.951

1.051.1

1.151.2

-25 0 25 50 75 100 125 150

Fosc

Fig.2 Feedback Source Current

0.80.850.9

0.951

1.051.1

1.151.2

-25 0 25 50 75 100 125 150

Ifb

Fig.3 Operating Current

0.80.850.9

0.951

1.051.1

1.151.2

-25 0 25 50 75 100 125 150

Iop

Fig.4 Max Inductor Current

0.80.85

0.90.95

1

1.051.1

-25 0 25 50 75 100 125 150

Ipeak

Fig.5 Start up Current

0.5

0.7

0.9

1.1

1.3

1.5

-25 0 25 50 75 100 125 150

Istart

Fig.6 Start Threshold Voltage

0.850.9

0.95

11.051.1

1.15

-25 0 25 50 75 100 125 150

Vstart

Figure 1. Operating Frequency Figure 2. Feedback Source Current

Figure 3. Operating Supply Current Figure 4. Peak Current Limit

Figure 5. Start up Current Figure 6. Start Threshold Voltage

Iover

KA5M0965Q

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typical performance characteristics (continued)(These characteristic graphs are normalized at Ta = 25°C)

Fig.7 Stop Threshold Voltage

0.850.9

0.951

1.051.1

1.15

-25 0 25 50 75 100 125 150

Vstop

Fig.8 Maximum Duty Cycle

0.850.9

0.951

1.051.1

1.15

-25 0 25 50 75 100 125 150

Dmax

Fig.9 Vcc Zener Voltage

0.80.850.9

0.951

1.051.1

1.151.2

-25 0 25 50 75 100 125 150

Vz

Fig.10 Shutdown Feedback Voltage

0.850.9

0.95

11.051.1

1.15

-25 0 25 50 75 100 125 150

Vsd

Fig.11 Shutdown Delay Current

0.80.850.9

0.951

1.051.1

1.151.2

-25 0 25 50 75 100 125 150

Idelay

Fig.12 Over Voltage Protection

0.850.9

0.951

1.051.1

1.15

-25 0 25 50 75 100 125 150

Vovp

Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle

Figure 9. VCC Zener Voltage Figure 10. Shutdown Feedback Voltage

Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection

KA5M0965Q

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typical performance characteristics (continued)(These characteristic graphs are normalized at Ta = 25°C)

Figure13. Soft Start Voltage Figure 14. Static Drain-Source on Resistance

Fig.13 Soft Start Voltage

0.850.9

0.951

1.051.1

1.15

-25 0 25 50 75 100 125 150

Vss

Fig.14 Drain Source Turn-onResistance

00.5

1

1.52

2.5

-25 0 25 50 75 100 125 150

Rdson

( )

KA5M0965Q

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Package Dimensions

TO-3P-5L

KA5M0965Q

11

Package Dimensions (Continued)

TO-3P-5L (Forming)

KA5M0965Q

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Ordering Information

TU : Non Forming TypeYDTU : Forming Type

Product Number Package Rating Operating Temperature

KA5M0965Q-TU TO-3P-5L650V, 9A -25°°°°C to +85°°°°C

KA5M0965Q-YDTU TO-3P-5L(Forming)

KA5M0965Q

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KA5M0965Q

2/5/01 0.0m 001Stock#DSxxxxxxxx

2001 Fairchild Semiconductor Corporation

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1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

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