datasheet bu2508df

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2508DF

GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very lowworst case dissipation.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 VVCEO Collector-emitter voltage (open base) - 700 VIC Collector current (DC) - 8 AICM Collector current peak value - 15 APtot Total power dissipation Ths ≤ 25 ˚C - 45 WVCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.12 A - 1.0 VICsat Collector saturation current 4.5 - AVF Diode forward voltage IF = 4.5 A 1.6 2.0 Vtf Fall time ICsat = 4.5 A; IB(end) = 1.1 A 0.4 0.6 µs

PINNING - SOT199 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 base

2 collector

3 emitter

case isolated

LIMITING VALUESLimiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 VVCEO Collector-emitter voltage (open base) - 700 VIC Collector current (DC) - 8 AICM Collector current peak value - 15 AIB Base current (DC) - 4 AIBM Base current peak value - 6 A-IB(AV) Reverse base current average over any 20 ms period - 100 mA-IBM Reverse base current peak value 1 - 5 APtot Total power dissipation Ths ≤ 25 ˚C - 45 WTstg Storage temperature -65 150 ˚CTj Junction temperature - 150 ˚C

1 2 3

case

b

c

e

Rbe

1 Turn-off current.

July 1998 1 Rev 1.600



THERMAL RESISTANCES


Rth j-hs Junction to heatsink without heatsink compound - 3.7 K/W

Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W

Rth j-a Junction to ambient in free air 35 - K/W

ISOLATION LIMITING VALUE & CHARACTERISTICThs = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Visol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 Vthree terminals to externalheatsink

Cisol Capacitance from T2 to external f = 1 MHz - 22 - pFheatsink

STATIC CHARACTERISTICSThs = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICES Collector cut-off current 2 VBE = 0 V; VCE = VCESMmax - - 1.0 mAICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA

Tj = 125 ˚CIEBO Emitter cut-off current VEB = 7.5 V; IC = 0 A - 227 - mABVEBO Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - VRbe Base-emitter resistance VEB = 7.5 V - 33 - ΩVCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V

L = 25 mHVCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.12 A - - 1.0 VVBEsat Base-emitter saturation voltage IC = 4.5 A; IB = 1.7 A - - 1.1 VhFE DC current gain IC = 1 A; VCE = 5 V - 13 -hFE IC = 4.5 A; VCE = 1 V 4 5.5 7.0VF Diode forward voltage IF = 4.5 A - 1.6 2.0 V

DYNAMIC CHARACTERISTICSThs = 25 ˚C unless otherwise specified


Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 80 - pF

Switching times (16 kHz line ICsat = 4.5 A; IB(end) = 1.1 A; LB = 6 µH;deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs)

ts Turn-off storage time 5.0 6.0 µstf Turn-off fall time 0.4 0.6 µs

Switching times (38 kHz line ICsat = 4.0 A; IB(end) = 0.9 A; LB = 6 µH;deflectioin circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs)

ts Turn-off storage time 4.7 5.7 µstf Turn-off fall time 0.25 0.35 µs

2 Measured with half sine-wave voltage (curve tracer).

July 1998 2 Rev 1.600



Fig.1. 16kHz Switching times waveforms.

Fig.2. Switching times definitions.

Fig.3. 16kHz Switching times test circuit.

Fig.4. Typical DC current gain. hFE = f (IC)parameter VCE

Fig.5. Typical base-emitter saturation voltage.VBEsat = f (IC); parameter IC/IB

Fig.6. Typical collector-emitter saturation voltage.VCEsat = f (IC); parameter IC/IB

IC

IB

VCE

ICsat

IBend

64us

26us20us

t

t

t

TRANSISTOR

DIODE

0.01 1IC / A

BU2508DF100

10

1 0.1 10

Tj = 25 C

Tj = 125 C5V

h FE

1V

ICsat

90 %

10 %

tfts

IBend

IC

IB

t

t

- IBM0.1 1 10

IC / A

VBESAT / V BU2508DF1.2

1.1

1

0.9

0.8

0.7

0.6

0.5

0.4

Tj = 25 C

Tj = 125 C

IC/IB=

3

4

5

+ 150 v nominal adjust for ICsat

1mH

12nF

D.U.T.LBIBend

-VBB Rbe

0.1 1 10IC / A

VCESAT / V BU2508DF1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

Tj = 25 C

Tj = 125 C

IC/IB=

4

5

3

July 1998 3 Rev 1.600



Fig.7. Typical base-emitter saturation voltage.VBEsat = f (IB); parameter IC

Fig.8. Typical collector-emitter saturation voltage.VCEsat = f (IB); parameter IC

Fig.9. Typical turn-off losses. Tj = 85˚CEoff = f (IB); parameter IC; f = 16 kHz

Fig.10. Transient thermal impedance.Zth j-hs = f(t); parameter D = tp/T

Fig.11. Typical collector storage and fall time.ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz

Fig.12. Normalised power dissipation.PD% = 100⋅PD/PD 25˚C = f (Ths)

0 1 2 3 4IB / A

VBESAT / V BU2508DF1.2

1.1

1

0.9

0.8

0.7

0.6

Tj = 25 C

Tj = 125 C

IC=

6A

4.5A

3A2A

0.001

0.01

0.1

1

10

0

0.2

0.1

0.05

0.02

0.5

BU2508AX

tp / sec

Zth K/W

1.0E-06 1E-04 1E-02 1E+00

D = tptp

T

TP

t

D

0.1 1 10IB / A

VCESAT / V BU2508DF10

1

0.1

Tj = 25 C

Tj = 125 C

Tj = 25 C

Tj = 125 C

IC=2A

3A

4.5A

6A

0.1 1 10IB / A

ts, tf / us BU2508DF12 11 10

9 8 7 6 5 4 3 2 1 0

IC =

4.5A3.5A

ts

tf

0.1 1 10IB / A

Eoff / uJ BU2508DF1000

100

10

IC = 4.5A

3.5A

0 20 40 60 80 100 120 140Ths / C

PD% Normalised Power Derating120

110

100

90

80

70

60

50

40

30

20

10

0

with heatsink compound

July 1998 4 Rev 1.600



Fig.13. Forward bias safe operating area. Ths = 25˚CI Region of permissible DC operation.II Extension for repetitive pulse operation.

NB: Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope.

Fig.14. Forward bias safe operating area. Ths = 25˚CI Region of permissible DC operation.II Extension for repetitive pulse operation.

NB: Mounted without heatsink compound and 30 ± 5 newton force on the centre of the envelope.

1 10 100 1000

100

10

1

0.1

0.01

tp =

10 us

100 us

1 ms

10 ms

DC

IC / A

VCE / V

ICM max

IC max

= 0.01

II

I

Ptot max

1 10 100 1000

100

10

1

0.1

0.01

tp =

10 us

100 us

1 ms

10 ms

DC

IC / A

VCE / V

ICM max

IC max

= 0.01

II

I

Ptot max

July 1998 5 Rev 1.600



MECHANICAL DATA

Dimensions in mm

Net Mass: 5.5 g

Fig.15. SOT199; The seating plane is electrically isolated from all terminals.

Notes1. Refer to mounting instructions for F-pack envelopes.2. Epoxy meets UL94 V0 at 1/8".

6.25.8

3.5

21.5max

15.7min

1 2 32.1 max 1.2

1.00.4 2.0

0.7 max

45o

3.2

5.2 max3.13.37.3

15.3 max

0.7

5.45

seatingplane

5.45

3.5 maxnot tinned

M

July 1998 6 Rev 1.600



DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.

LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.

July 1998 7 Rev 1.600

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datasheet bu2508df