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Efficient light sources at BEUV & water
window soft x-ray wavelengths
Utsunomiya University, Japan
Takeshi Higashiguchi
Coauthors & CollaboratorsYuhei Suzuki, Masato Kawasaki, Hayato Ohashi,Nobuyuki NakamuraRyoichi Hirose, Takeo EjimaWeihua JiangTaisuke Miura, Akira EndoChihiro SuzukiKentaro Tomita, Daisuke Nakamura, Akihiko Takahashi, Tatsuo OkadaMasaharu Nishikino Shinsuke Fujioka, Kensuke Yoshida, Teruyuki Ugomori, Nozomi Tanaka, Hiroaki Nishimura Atsushi SunaharaShuichi Torii, Tetsuya MakimuraScally Enda, Bowen Li, Colm O’Gorman, Thomas Cummins, Takamitsu Otsuka, Deirdre Kilbane, Rebekah D’Arcy, Padraig Dunne, Gerry O'Sullivan
Acknowledgments: Thanks a million!!!
Recent progress in Utsunomiya, Japan
- 13.5-nm microplasma high brightness source
- simulation to evaluate plasma parameter & spectra
- seed beam at 10.6 μm for ps-CO2 pulse
- 6.x nm & WW incoherent radiation by various elements
- x-ray microscope
!λ (nm)
!λ (nm)
2 4
2 4
(a) Line spectrum
(b) UTA
Sn V Sn VI Sn VII Sn VIII Sn IX Sn X Sn XI Sn XII Sn XIII Sn XIV0
20
40
60
80
100
120
Energ
y (
eV
)
Scheme for high-energy emission: unresolved transition array
Peak wavelength of UTA emission
2
3
4
5
6
7
8
9
10
60 65 70 75 80 85
Peak WL w/ ns-laser_180Peak WL w/ ps-laser_99
Peak
wav
elen
gth
(nm
)
Atomic number
Gd
TbRe
Pt
BiAu
Pb4.5 nm W
Ta
Er
0 1 2 3 4 5 6 7 8
Inte
nsity
/ Q
E (a
rb. u
nits
)
Wavelength (nm)
ns-laser_180
83Bi
82Pb
79Au
78Pt
75Re
65Tb
64Gd
74W
73Ta
68Tb
0 1 2 3 4 5 6 7 8
Inte
nsity
/ Q
E (a
rb. u
nits
)
Wavelength (nm)
ps-laser_99
83Bi
82Pb
79Au
78Pt
75Re
65Tb
64Gd
74W
73Ta
68Tb
laser wavelength: 1064 nmpulse duration: 10 ns (blue) 150 ps (red)
Sn plasma & Mo/Si @ 13.5 nm
ArF laser @ 193 nm
? & ? @ ? nm
G. Tallents et al., Nature Photonics 4, 809 (2010).
Beyond EUV at 6.x nm
6.0 6.5 7.0 7.5 8.00
70
70
70
70
70
70
70Gd12+
Gd13+
Gd14+
Gd15+
Gd16+
Gd17+
Gd18+
Wavelength (nm)
gf
6.0 6.5 7.0 7.5 8.00
35
35
35
35
35
35
35Gd19+
Gd20+
Gd21+
Gd22+
Gd23+
Gd24+
Gd25+
Wavelength (nm)
T. Otsuka et al., Appl. Phys. Lett. 97, 111503 (2010). B. Li et al. Appl. Phys. Lett. 99, 231502 (2010).
Rare-earth: Gd for 6.x nm
Charge separated spectra of Gd ions by E-BITExpt.! Calc. !
H. Ohashi et al. (to be published)
[Kr] 4d10
[Kr] 4d
Charge-defined emission spectra with FAC for 4d-4f transitions!
Summary in 2 years: 6.x-nm Beyond EUV sources
0
0.1
0.2
0.3
0.4
0.5
1011 1012 1013 1014 1015 1016
Con
vers
ion
effic
ienc
y (%
)at
6.7
nm
in 0
.6%
BW
and
2π
sr
Laser intensity (W/cm2)
nspsfs
0
0.1
0.2
0.3
0.4
0.5
0.6
Con
vers
ion
effic
ienc
y (%
)at
6.7
nm
in 0
.6%
BW
and
2 s
r
109 1010 1011
Laser intensity (W/cm2)1012
I.!/ D I0.!/e!!n`` ! cS !LAPL 99, 191502 (2011).
0
50
100
150
200
250
300
350
5.5 6 6.5 7 7.5 8 8.5 9 9.5 10
Inte
nsity
(arb
. uni
ts)
Wavelength (nm) APL 99, 231502 (2010).
APL 100, 061118 (2012).
low density target DPP CO2 LPP
ps LPP
0
50
100
150
200
250
300
5.5 6 6.5 7 7.5 8 8.5 9 9.5 10
Inte
nsity
(arb
. uni
ts)
Wavelength (nm)
1064 nm532 nm355 nm
Laser
10.1117/2.1201109.003765
Shorter-wavelength extreme-UVsources below 10nmTakeshi Higashiguchi, Takamitsu Otsuka, Noboru Yugami,Weihua Jiang, Akira Endo, Padraig Dunne, Bowen Li, andGerry O’Sullivan
A next-generation laser-produced plasma system based on rare-earthtargets generates strong resonant line emissions at 6.5–6.7nm.
In recent years, laser-produced dense plasmas have been attract-ing attention as high-efficiency, high-power sources of extremeUV (EUV) radiation. Sources with a wavelength less than 10nmare of particular interest for use in next-generation semiconduc-tor lithography and for other applications, such as materials sci-ence and biological imaging. Manufacturer Cymer, for example,has already shipped a high-average-power 13.5nm engineer-ing prototype to a semiconductor device company that wouldenable high-volume production at a power level of 80W.1 Thissource optimizes unresolved transition array (UTA) emission ofhighly ionized tin for high conversion efficiency (CE) of the in-put laser energy to the in-band (i.e., a bandwidth of about 2%around 13.5nm) EUV energy. Full recovery of the injected fuel isrealized through ion deflection in a magnetic field. Low-densitytargets like tin further enable suppression of satellite (i.e., peri-pheral) emission. Full ionization, which helps to control debrisand thus avoid damage to the source mirror, is attained withshort-pulse CO2 laser irradiation.
Recently, the possibility of switching to an even shorterEUV wavelength of 6.Xnm was suggested.2 In fact, 6.Xnmbeyond-EUV (BEUV) emission can be coupled with a molyb-denum/boron carbide (Mo/B4C) or lanthanum/boron carbide(La/B4C) multilayer mirror whose reflectivity is currently 40%at 6.5–6.7nm (theoretical maximum >70%). The UTA emissionexploited in tin is scalable to shorter wavelengths. The rare-earth element gadolinium (Gd) has a CE similar to that of tin,though at a higher plasma temperature, within a narrow spectralrange centered near 6.7nm. However, no fundamental researchhas been reported on spectral behavior at 6.7nm and its depen-dence on various parameters, such as laser wavelength, initialtarget density, and dual-laser-pulse delay. EUV emission at thislevel could be tuned for use with a Mo/B4C multilayer mirrorto power practical sources.
Figure 1. Electron temperature dependence of the gadolinium (Gd) ionpopulation according to the steady-state collisional-radiative model (a).The weighted oscillation strength (gf) spectra of the resonant lines foreach contributing ion stage are shown in (b) and (c).
In a proof-of-principle experiment, we produced a source withpeak emission around 6.5–6.7nm.3, 4 gadolinium and terbium(another rare-earth element) produce strong narrow-band emis-sion, again attributable to thousands of resonance lines that
Continued on next page
APL 97, 231503 (2010).
0
0.2
0.4
0.6
0.8
1.0
1.2
5 5.5 6 6.5 7 7.5 8 8.5 9
Inte
nsity
(arb
. uni
ts)
Wavelength (nm)5 5.5 6 6.5 7 7.5 8 8.5 9
Wavelength (nm)
GdTb
APL 97, 111503 (2010).
Self-absorption Spectral structure
Peak wavelength
0
0.1
0.2
0.3
0.4
0.5
0.6
-100 -50 0 50 100 150 200Pulse separation time (ns)
Con
vers
ion
effic
ienc
y (%
)at
6.7
nm
in 0
.6%
BW
and
2π
sr
Laser intensityPrepulse: 1.0 x 1011 W/cm2
Main pulse: 5.6 x 1012 W/cm2
APL 100, 141108 (2012).APL 101, 013112 (2012).
CO2Nd:YAG
1010 1011 1012 10130
0.2
0.4
0.6
0.8
1
Laser intensity (W/cm2)
Conv
ersio
n ef
ficie
ncy
(%)
3 4 5 6 7 8 9 10 11 120
0.2
0.4
0.6
0.8
1
Wavelength (nm)
Inte
nsity
(arb
. uni
ts)
3 4 5 6 7 8 9 10 11 120
0.2
0.4
0.6
0.8
1
Wavelength (nm)
Inte
nsity
(arb
. uni
ts)
Opt. Exp. (accepted).
Database experiment by GEKKO XII
SphericalPlanar
Polystyrene*φ50
*φ500*µm
*
Target*material*(Gd,*Tb,*Mo)*2*µm*coa=ng
support
Laser*beams*(λ=1.053*µm)@1011~1014*W/cm2**1.3*ns*
EUV$pinhole$camera$images$at$6.7$nm$with$0.6%BW$from$Gd$plasmas$(magnifica)on:,x,5.7),,Zr,filter,+,La/B4C,mirror,
650µm
φ500µm
1E+12,W/cm2
φ300µm
500µm
3E+12,W/cm2
φ100µm
150µm
3E+13,W/cm2
450µm
φ200µm
7E+12,W/cm2
stoke
120µm
φ50µm
1E+14,W/cm2
Spectra & CEs in GEKKO XII exp
6.7$nm6.5$nm
Gd#/#Tb#/#Mo#plasma#spectra1.0
0.8
0.6
0.4
0.2
Inte
nsity
[a.u
.]
121086
Wavelength [nm]
GdMoTb
[@1012 W/cm2]
0.8
0.6
0.4
0.2
0.0Co
nver
sion
Effic
ienc
y(%
)
2 3 4 5 61012
2 3 4 5 61013
2 3 4
Laser Intensity(W/cm)
Tb Gd Mo
Laser intensity (W/cm2)
Electron density profile
1018
2
3
4
5
6
789
1019
2
3
4
5
Ele
ctro
n de
nsity
[cm
-3]
10008006004002000
Distance [µm]
1.0
0.8
0.6
0.4
0.2
0.0
Intensity [a.u.]
Gdø500 µm 1x1012
W/cm2
Gdø200 µm 7x1012
W/cm2
Gd ø50 µm 1x1014
W/cm2
7×1012&W/cm2
1×1012&W/cm2
1×1014&W/cm2
Requirement in high-Z plasma UTA with high CE
Optically thin plasmas for reducing self-absorption effects
Suppression of satellite emission & higher spectral purity
Long wavelength (low critical density): CO2 laser@1019 /cc
Short laser pulse duration: ~1-2 ns@YAG laser (1064 nm)
Low density targets
Discharge plasmas (low density plasmas)
Low density, high temperature plasma
Nd:YAG & CO2 laser-produced Gd plasmas
3 4 5 6 7 8 9 10 11 120
0.2
0.4
0.6
0.8
1
Wavelength (nm)
Inte
nsity
(arb
. uni
ts)
3 4 5 6 7 8 9 10 11 120
0.2
0.4
0.6
0.8
1
Wavelength (nm)
Inte
nsity
(arb
. uni
ts)
T. Higashiguchi et al., Optics Express (accepted).
Spectral purity: efficiency in 0.6%BW at 6.x nm
CO2Nd:YAG
1010 1011 1012 10130
0.5
1
1.5
2
2.5
3
Laser intensity (W/cm2)
Spec
tral e
fficie
ncy
(%)
CO2Nd:YAG
1010 1011 1012 10130
0.2
0.4
0.6
0.8
1
Laser intensity (W/cm2)
Conv
ersio
n ef
ficie
ncy
(%)
T. Higashiguchi et al., Optics Express (accepted).
Plasma parameters
T. Higashiguchi et al., Optics Express (accepted).
log n e
(cm
-3)
log n e
(cm
-3)
T e (e
V)
T e (e
V)
(a) (c)
(b) (d)
Nd:YAG CO2
Toward a single shot flash source in WW for Bio Photo in LABOur objective is a demonstration of high-brightness, high energy EUV/soft x-ray source in water window (3.2 nm) for the first time in the world!!!
CO2 Laser
Multilayermirror
Laser
Plasma light source
Soft X-ray CCD
Biological sample
EUV
Pinhole
SchwarzchildOptics
0
50
100
150
200
250
300
350
Inte
nsity
(arb
. uni
ts) ExperimentCalculation
6 6.5 7 7.5 8
Wavelength (nm)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Inte
nsity
(arb
. uni
ts)
EUV & BEUV source study Wavelength: 13.5 & 6.x nm
Lithography Life Innovation Compact source development for Bio.
Wavelength: 2-4 nm
Proposal (APL x 1)
10.1117/2.1201109.003765
Shorter-wavelength extreme-UVsources below 10nmTakeshi Higashiguchi, Takamitsu Otsuka, Noboru Yugami,Weihua Jiang, Akira Endo, Padraig Dunne, Bowen Li, andGerry O’Sullivan
A next-generation laser-produced plasma system based on rare-earthtargets generates strong resonant line emissions at 6.5–6.7nm.
In recent years, laser-produced dense plasmas have been attract-ing attention as high-efficiency, high-power sources of extremeUV (EUV) radiation. Sources with a wavelength less than 10nmare of particular interest for use in next-generation semiconduc-tor lithography and for other applications, such as materials sci-ence and biological imaging. Manufacturer Cymer, for example,has already shipped a high-average-power 13.5nm engineer-ing prototype to a semiconductor device company that wouldenable high-volume production at a power level of 80W.1 Thissource optimizes unresolved transition array (UTA) emission ofhighly ionized tin for high conversion efficiency (CE) of the in-put laser energy to the in-band (i.e., a bandwidth of about 2%around 13.5nm) EUV energy. Full recovery of the injected fuel isrealized through ion deflection in a magnetic field. Low-densitytargets like tin further enable suppression of satellite (i.e., peri-pheral) emission. Full ionization, which helps to control debrisand thus avoid damage to the source mirror, is attained withshort-pulse CO2 laser irradiation.
Recently, the possibility of switching to an even shorterEUV wavelength of 6.Xnm was suggested.2 In fact, 6.Xnmbeyond-EUV (BEUV) emission can be coupled with a molyb-denum/boron carbide (Mo/B4C) or lanthanum/boron carbide(La/B4C) multilayer mirror whose reflectivity is currently 40%at 6.5–6.7nm (theoretical maximum >70%). The UTA emissionexploited in tin is scalable to shorter wavelengths. The rare-earth element gadolinium (Gd) has a CE similar to that of tin,though at a higher plasma temperature, within a narrow spectralrange centered near 6.7nm. However, no fundamental researchhas been reported on spectral behavior at 6.7nm and its depen-dence on various parameters, such as laser wavelength, initialtarget density, and dual-laser-pulse delay. EUV emission at thislevel could be tuned for use with a Mo/B4C multilayer mirrorto power practical sources.
Figure 1. Electron temperature dependence of the gadolinium (Gd) ionpopulation according to the steady-state collisional-radiative model (a).The weighted oscillation strength (gf) spectra of the resonant lines foreach contributing ion stage are shown in (b) and (c).
In a proof-of-principle experiment, we produced a source withpeak emission around 6.5–6.7nm.3, 4 gadolinium and terbium(another rare-earth element) produce strong narrow-band emis-sion, again attributable to thousands of resonance lines that
Continued on next page
In vivo cell observation Original micro source
Single shot, flash biological imaging
Si / SiO
Sn: 10 - 15 um φ
Laser 2
Shorter wavelength
APL x 7 (2010-2012)
CE ~ 5% CE ~ 0.1%, 100 μJ (?)WW 100-μJ at 100-mJ laser
Low temperature result from Bi by 150-ps laser
0
100
200
300
400
500
600
0
0.2
0.4
0.6
0.8
1.0
Inte
nsity
(arb
. uni
ts)
Experimental result700 eV
0
0.04
0.08
0.12
0.16
0.20190 eV(a)
12
3
4
1 2 3 4 5 6
Wavelength (nm)In
tens
ity (a
rb. u
nits
) 1: 4f-5g, < Bi35+
2,3: 4p-4d, 4d-4f, Bi36+-Bi45+ 4: 4d-4f
T. Higashiguchi et al., Appl. Phys. Lett. 100, 014103 (2012).
Laser intensity dependence in Bi emission
1 2 3 4 5 6
Inte
nsity
(arb
. uni
ts)
Wavelength (nm)
9.5 x 1013 W/cm25.4 x 1013 W/cm22.9 x 1013 W/cm2
(a) n=4 - n=4n=4 - n=5
200
300
400
500
600
700
Pho
ton
ener
gy (e
V)
1013 1014
Laser intensity (W/cm2)
(b)600
500
400
300
200
100
0
T. Higashiguchi et al., Appl. Phys. Lett. 100, 014103 (2012).
Concept: Unresolved transition array (UTA) many resonant lines
!λ (nm)
!λ (nm)
2 4
2 4
(a) Line spectrum
(b) UTA
02
46
500
1000
15000
0.01
0.02
0.03
0.04
0.05
Wavelength (nm)Te (eV)
Rel
ativ
e in
tens
ity (a
.u.)
Figure 2: Takeshi Higashiguchi et al.
13.5 nm CE ~ 5% by Sn6.x nm CE ~ 1% by Gd/Tb
3 nm and/or 4 nm CE > 0.1% by Bi
T. Higashiguchi et al., Appl. Phys. Lett. 100, 014103 (2012).
Extreme Condition: keV Bi plasma spectra
Low density, high temperature 1-keV plasma
optical thin, low density optical thick, high densityOct.17 : 30 shots May 27 - May 31 : 49 shots
0 500 1000 15000
0.5
1
Ion
fract
ion
Te (eV)
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
24+
27+30+ 33+36+
39+42+ 45
+
0 500 1000 15000
50
Aver
age
ioni
zatio
n
0 500 1000 15000
50
Aver
age
ioni
zatio
n
0 500 1000 15000
50
Aver
age
ioni
zatio
n
0 500 1000 15000
50
Aver
age
ioni
zatio
n
0 500 1000 15000
50
Aver
age
ioni
zatio
n
0 500 1000 15000
50
Aver
age
ioni
zatio
n
0 500 1000 15000
50
Aver
age
ioni
zatio
n
0 500 1000 15000
50
Aver
age
ioni
zatio
n
0 500 1000 15000
50
Aver
age
ioni
zatio
n
0 500 1000 15000
50
Aver
age
ioni
zatio
n
0 500 1000 15000
50
Aver
age
ioni
zatio
n
0 500 1000 15000
50
Aver
age
ioni
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T. Higashiguchi et al., Appl. Phys. Lett. 100, 014103 (2012).
15
Figure 5
Lower temperature ~0.2 keV vs 1 keV
J. Phys. B 45, 245004 (2012).Appl. Phys. Lett. 102, 041117 (2013).
Zr Bi
J. Phys. B 45, 245004 (2012).Appl. Phys. Lett. 102, 041117 (2013).
Zr plasma WW source for 1-μm laser
252
Fig. 6 Deˆnition of parameters for ellipsoid (a) and KB mirrors(b).
252 July 2006 Vol.19 No.4
y
Rm Rs 1)
Rm 2/(1/p 1/q)/sin ui (8)
Rs 2 sin ui/(1/p 1/q) Rm sin2 ui (9)
p q
q 1/q 0
X p 15 50 m, q 5 20 m, ui1 10 mrad Rm 0.1 10 km, Rs 30 100 mm
4 6
uiRm Rs
S
F
F S q/p (10)
M q/p
M 0.1 1
4.2 11 1
4 1 km
1 m
Rm 1 km
0.1 mm
km
7
mm
1
4.3 2
Fig. 6(b)
mm
mm
Fig. 6(a)
1 2 2
2
Rm100 m Zeiss
KEK PF
BL9A
2
2 10)
1 2 mm