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Esec 2100 xPplus
The Fastest 12” Epoxy Die Bonder
The revolutionary Phi-Y pick-and-place produces a quantum
leap in speed, with an increasing standard accuracy of 20 μm.
Optionally, the accuracy can even be improved, down to 15 μm.
Minimal distances between pick and bond positions coupled with
the stiff symmetrical bondhead and vibration compensation provide
the shortest settling times imaginable, which ultimately lead to the
unsurpassed speed of the Die Bonder Esec 2100 xPplus
.
Standard accuracy 20 μm
Optional 15 μm accuracy (at highest speed)
Fastest Time to Yield
Highest uptime
Flexible platform for all epoxy packages
Process Quality for Highest Yield
Future Proof Equipment
2nd GENERATION VISION SYSTEM
CLEAN MACHINE
STRIP THICKNESSCOMPENSATION
HIGH PRECISION BONDING
DOUBLEYhS PATTERN
www.besi.com
Esec 2100 xPplus
The Fastest 12” Epoxy Die Bonder
The revolutionary Phi-Y pick-and-place produces a quantum
leap in speed, with an increasing standard accuracy of 20 μm.
Optionally, the accuracy can even be improved, down to 15 μm.
Minimal distances between pick and bond positions coupled with
the stiff symmetrical bondhead and vibration compensation provide
the shortest settling times imaginable, which ultimately lead to the
unsurpassed speed of the Die Bonder Esec 2100 xPplus
.
Standard accuracy 20 μm
Optional 15 μm accuracy (at highest speed)
Fastest Time to Yield
Highest uptime
Flexible platform for all epoxy packages
Process Quality for Highest Yield
Future Proof Equipment
QFFN PSiP
OtherO
MEMS
Automotiv
e
Consumer
EElleectronics
Mobile
Su
bstrateLeadfr
ame
Epoxyx
Die AtA
tach Film
2nd GENERATIONVISION SYSTEM
CLEANMACHINE
STRIP THICKNESSCOMPENSATION
HIGH PRECISIONBONDING
DOUBLEYhS PATTERNN
www.besi.com
Double YhS PatternGood quality at double process speed
Better tailing characteristics
Best suitable for medium sized rectangular dice
Clean MachineISO class 5 (class 100) inside machine
Reduces airborne particle through laminar flow
Specially designed for CIS
2nd Generation Vision SystemGood image quality with improved signal to
noise ratio
Reduced image transfer time
Better recognition with new image sensor
High Precision BondingImproved placement accuracy by optimizing
dynamics, Pick & Place Z-axis guides and bearings
Standard pickup tools for high precision mode
Position auto correction at dispense and bond
Optionally available
Strip Thickness CompensationStrip thickness based Z-height correction
Excellent bond line thickness control
No UPH impact and easy setup
Optionally available
Machine Dimensions
Footprint: WxDxH: 1785 x 1448 x 1400 mm
Weight: approx. 1400 kg
Supply Requirements
Voltage: 208 - 230 VAC (@ 47 - 63 Hz)
Power rating: 800 - 1.100 VA
Compressed air: min. 5.2 bar
Vacuum: min. -0.75 bar
Nitrogen blow: 1.8 - 6 bar
Wafer and Die Dimensions
Wafer size: 4” - 12”
Frame size: 8” - 12”
Die size: 0.5 - 20 mm
Die thickness: > 0.75 mm
Leadframe Size
Width: 9 - 84 mm (100 mm opt.)
Length: 90 - 300 mm
Thickness: 0.1 - 2.5 mm
Process
Bond force: 0.2 - 50 N
Bond rotation 360°
Heating at bond for WBC & Simple WBL
Accuracy / Productivity
>2 mm: 20 μm / 0.2° (3 )
>2 mm: 15 μm / 0.2° (3 ) (option)
0.5 - 2 mm: 20 μm / 0.5° (3 )
MTBF: > 200h
Double YhS PatternGood quality at double process speed
Better tailing characteristics
Best suitable for medium sized rectangular dice
Clean MachineISO class 5 (class 100) inside machine
Reduces airborne particle through laminar flow
Specially designed for CIS
2nd Generation Vision SystemGood image quality with improved signal to
noise ratio
Reduced image transfer time
Better recognition with new image sensor
High Precision BondingImproved placement accuracy by optimizing
dynamics, Pick & Place Z-axis guides and bearings
Standard pickup tools for high precision mode
Position auto correction at dispense and bond
Optionally available
Strip Thickness CompensationStrip thickness based Z-height correction
Excellent bond line thickness control
No UPH impact and easy setup
Optionally available
Machine Dimensions
Footprint: WxDxH: 1785 x 1448 x 1400 mm
Weight: approx. 1400 kg
Supply Requirements
Voltage: 208 - 230 VAC (@ 47 - 63 Hz)
Power rating: 800 - 1.100 VA
Compressed air: min. 5.2 bar
Vacuum: min. -0.75 bar
Nitrogen blow: 1.8 - 6 bar
Wafer and Die Dimensions
Wafer size: 4” - 12”
Frame size: 8” - 12”
Die size: 0.5 - 20 mm
Die thickness: > 0.75 mm
Leadframe Size
Width: 9 - 84 mm (100 mm opt.)
Length: 90 - 300 mm
Thickness: 0.1 - 2.5 mm
Process
Bond force: 0.2 - 50 N
Bond rotation 360°
Heating at bond for WBC & Simple WBL
Accuracy / Productivity
>2 mm: 20 μm / 0.2° (3 )
>2 mm: 15 μm / 0.2° (3 ) (option)
0.5 - 2 mm: 20 μm / 0.5° (3 )
MTBF: > 200h
www.besi.com - [email protected]
