EUV Source Workshop, 23 Feb 20031

EUV Light Source DevelopmentEUV Light Source Developmentat EUVAat EUVA

EUVA(Extreme Ultraviolet Lithography System Development Association)

Akira Endo, Hiroto Sato, Hiroshi Komori, Tamotsu Abe, Hakaru Mizoguchi, Koichi Toyoda,

Yasuhiro Horiike

EUV Source WorkshopFebruary 23, 2003

Santa Clara, California

EUV Source Workshop, 23 Feb 20032

OutlineOutline

••EUVA Members and Organization EUVA Members and Organization ••Main Research TopicsMain Research Topics••Targets and Time SchedulesTargets and Time Schedules••Light Source Development: LPP & DPPLight Source Development: LPP & DPP

••Summary

--

Summary

- Hiratsuka R&D Center- Gotenba Branch Lab.

Hiratsuka R&D CenterGotenba Branch Lab.

EUV Source Workshop, 23 Feb 20033

EUVA OrganizationEUVA Organization

High Power LPP SystemKomatsu, USHIO,

Gigaphoton

Capillary discharge

Gotenba Branch Lab.High Power DPP System

USHIO, Gigaphoton

Nikon, CanonEvaluation

Universities

Tokyo Institute of Technology

Kumamoto UniversityCapillary discharge

Osaka UniversityPlasma Simulation

Himeji Institute of TechnologySolid Xe Target

Kyushu University LPP

Miyazaki UniversityLPP

HiratsukaResearch Center

Light Source Development ProjectLight Source Development Project

AISTSn Target

AIST: National Inst. of Adv. Industrial Sci. & Technology

EUV Source Workshop, 23 Feb 20034

EUVA Main TopicsEUVA Main Topics

Osaka UniversityOsaka University

Kyushu University Kyushu University

UniversitiesUniversities

Miyazaki UniversityMiyazaki UniversityHimeji Institute of TechnologyHimeji Institute of Technology

Tokyo Institute of TechnologyTokyo Institute of Technology

Kumamoto UniversityKumamoto University

High Power and High Quality EUV Light Source

Development

Topic 1Diagnostics of EUV Light Sources and

Mirror Damage

Topic 2

EUV Source Workshop, 23 Feb 20035

Targets and Time SchedulesTargets and Time Schedules

•High rep-rate power supply•Capillary discharge

20022002 20032003 20042004 20052005EUV Power@Intermediate focus

Development of DPP

Development of LPP

4W 10W

•Hiratsuka Research Center(Komatsu, Gigaphoton)

•AIST•Himeji Institute of Technology•Osaka University•Miyazaki University•Kyushu University

•Gotenba Branch Lab.(USHIO, Gigaphoton)

•Tokyo Institute of Technology•Kumamoto University

～2.5kW Nd:YAG ～5kW Nd:YAGXenon target

•Development of other targets•Simulation of plasma physics

Improved High repetition rateExperimental system

New targets

2006Fiscal YearFiscal Year

EUV Source Workshop, 23 Feb 20036

LPP DevelopmentLPP Development

Mar. 2003Mar. 2003Completion of 1st experimental setup.Completion of 1st experimental setup.

Evaluation of liquid jet target.Evaluation of liquid jet target.

Middle 2004Middle 2004Collector optics installed into chamber.Collector optics installed into chamber.Improved high power laser system.Improved high power laser system.

Mar. 2006Mar. 2006Higher EUV power and longer system lifetime.Higher EUV power and longer system lifetime.(Debris & thermal management).

1W(primary source)

(Debris & thermal management).

Milestone 14W @intermediate focus

Milestone 210W @intermediate focus

Collector optics

EUV source

Primarysource

Intermediatefocus Exposure system

LPPLPP

EUV Source Workshop, 23 Feb 20037

LPP System SchematicLPP System Schematic

Complete EUV SystemComplete EUV System

Xenon Xenon recirculation recirculation

systemsystem

EUV EUV chamberchamber

Laser Laser (MOPA)(MOPA)

Master Oscillator

Power Amplifier

Vacuum ChamberVacuum Chamber

TMPTMP

Collector Collector MirrorMirror

Nozzle Nozzle SystemSystem

PlasmaPlasma

LPPLPP

EUV Source Workshop, 23 Feb 20038

LPP SystemLPP System

ChamberChamber

Flying CircusFlying CircusⅡⅡ

NozzleNozzle　　SystemSystem

SpectrographSpectrographTMPTMP

LaserLaser

LPPLPP

EUV Source Workshop, 23 Feb 20039

Xenon Jet Experimental TestXenon Jet Experimental Test--StandStand

Nozzle SystemNozzle System

Xenon LiquefactionXenon LiquefactionSystemSystem

TestingTestingChamberChamber

XeXe Temperature: 160K Temperature: 160K -- 190K190KXeXe Pressure: Pressure: <5MPa<5MPa

50 mm50 mm

XeXe JetJet

Liquid Xenon Jet SystemLiquid Xenon Jet System

LPPLPP

EUV Source Workshop, 23 Feb 200310

Driver Laser System Driver Laser System -- SchematicSchematic --

AMP module--Average Power: 500 WattAverage Power: 500 Watt--Rep. Rate: Rep. Rate: 10 kHz10 kHz--Pulse duration: 30 nsPulse duration: 30 ns

Main-AMP1 Main-AMP2 Main-AMP3 Main-AMP4

LPPLPP

Pre-AMP4 Pre-AMP3 Pre-AMP2 Pre –AMP1

Master Oscillator Isolator

EUV Source Workshop, 23 Feb 200311

Driver Laser System Driver Laser System -- Beam ProfileBeam Profile --

After 3After 3--Main AmplifierMain Amplifier350W

Before Main AmplifierBefore Main Amplifier60W 350W60W

--We achieved 500 Watt @ 10kHz.We achieved 500 Watt @ 10kHz.--Further driver laser system improvements:Further driver laser system improvements:

Deformable mirror (beam quality)Deformable mirror (beam quality)Shorter pulse duration oscillator (several ns)Shorter pulse duration oscillator (several ns)

LPPLPP

EUV Source Workshop, 23 Feb 200312

Characteristics of EUV RadiationCharacteristics of EUV Radiation

EUV EnergyEUV Energy

0

2000

4000

6000

8000

10000

12000

14000

10 11 12 13 14 15Wavelength [nm]

Inte

nsity

[a.u

.]

EUV SpectraEUV Spectra

0

0.2

0.4

0.6

0.8

0 20 40 60 80 100 120

Laser energy [mJ]

In-b

and

EUV

ene

rgy

[mJ]

0

0.2

0.4

0.6

0.8

C.E

. [%

]

EUV energy

C.E.

--InIn--band EUV energy: 0.61 band EUV energy: 0.61 mJmJ--Conversion efficiency (C.E.): 0.53% (2%BW, 2Conversion efficiency (C.E.): 0.53% (2%BW, 2ππ srsr))

LPPLPP

EUV Source Workshop, 23 Feb 200313

DPP DevelopmentDPP Development

Mar. 2003Mar. 2003Construction of an experimental system.Construction of an experimental system.Primary source evaluation. Primary source evaluation.

Middle 2004Middle 2004Build collector optics into chamber.Build collector optics into chamber.Improved high repetition pulse power generator.Improved high repetition pulse power generator.

Mar. 2006Mar. 2006Higher power and longer lifetime.Higher power and longer lifetime.Debris mitigation,thermal management.

5W(primary source)

Debris mitigation,thermal management.

Milestone 14W @intermediate focus

Collector optics

EUV source

Primarysource

Intermediatefocus

Milestone 210W @intermediate focus

Exposure system

DPPDPP

EUV Source Workshop, 23 Feb 200314

Picture of EUV Diagnostics SystemPicture of EUV Diagnostics System

EUV spectrometer

EUV energy monitor

TMPs

Debris monitorDebris shield(to be installed)

EUV angular distribution monitor

Discharge head

DPPDPP

EUV Source Workshop, 23 Feb 200315

Capillary ZCapillary Z--pinch Discharge Headpinch Discharge HeadEUV detectorsFlying Circus II (Scientec Engineering)

φ200 mm, r=500 mm, Mo/Si, multi-layer concave mirror+ Zr filter (Luxel Corp., 150-nm thick)+ AXUV-100G (IRD Inc.) photodiode

9-V biased, 50-Ohm terminatedEUV Spectrometer

9-17 nm1200 g/mm2-stage MCP + CCD

Diagnostics chamber

Downstream (~10-4 Torr)

Grounded anode

CapillaryMaterial : silicon carbide (SiC)Diameter : 2.3 mmLength : 6.0 mm

Filled gasXenonControlled by mass-flow controller

Insulator

High voltage cathode

Z-axis

5° 5°EUV monitor Spectrometer

Upstream (~1 Torr)Xenon gas flow

DPPDPP

EUV Source Workshop, 23 Feb 200316

Comparison of EUV spectra forComparison of EUV spectra forthe voltage scan and the gasthe voltage scan and the gas--pressure scanpressure scan

0

1 104

2 104

3 104

4 104

5 104

6 104

7 104

8 104

10 11 12 13 14 15 16 17

0.44 Torr (58 Pa)0.83 Torr (110 Pa)1.12 Torr (149 Pa)

Inte

nsity

(a.u

.)

Wavelength (nm)

0

5 104

1 105

1.5 105

2 105

2.5 105

3 105

10 11 12 13 14 15 16 17

2.5 kV3.5 kV4.5 kV5.4 kV

Inte

nsity

(a.u

.)

Wavelength (nm)

EUV spectra for 2.5 kV of charging voltage

EUV spectra for 1.12 Torr (149 Pa) of upstream gas pressure

7

8

9

10

11

12

13

14

15

0.2 0.4 0.6 0.8 1 1.2

2.5 kV3.5 kV4.5 kV5.4 kV

Rer

ativ

e in

-ban

d EU

V en

ergy

(%)

Upstream pressure (Torr)

Xe XIXe XII

Xe X

Xe IXSi VI

Relative spectral in-band EUV energy

[%]100)dI(

)dI(energyspectralbandinRerative nm 17.46

9.37nm

nm 13.77

13.23nm ×=−∫∫

λλ

λλ

- Higher gas pressure caused increase both in spectral intensity and relative in-band spectral intensity.- Higher current caused increase in spectral intensity. However, relative in-band spectral intensity decreased for 4.5 and 5.4 kV of charging voltage.- Higher current resulted in higher spectral intensity of Si VI lines. It means the higher debris generation for the given experimental parameters.

DPPDPP

EUV Source Workshop, 23 Feb 200317

Dependencies of EUV energy on gas pressure and Dependencies of EUV energy on gas pressure and conversion efficiency on stored energy for unit solid angleconversion efficiency on stored energy for unit solid angle

0

1

2

3

4

5

6

7

8

9

0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2Upstream pressure (Torr)

In-b

and

EUV

ener

gy (m

J/sr

)

2.5 kV3.5 kV4.5 kV5.4 kV

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

2 4 6 8 10 12 14 16 18

0.44 Torr (58.2 Pa)0.65 Torr (86.8 Pa)0.83 Torr (110 Pa)0.99 Torr (132 Pa)1.12 Torr (149 Pa)

Dis

sipa

ted

ener

gy-to

-EU

V co

nver

sion

effi

cien

cy (%

/sr)

Stored energy (J)

In-band EUV energy per pulseElectrical-to-EUV energy

conversion efficiency

- EUV energy increased in proportion as gas pressure increased, and was in proportion to stored energy of the generator.- 7.4 J of stored energy showed the highest conversion efficiency for the given current pulse and capillary load configuration at any gas pressure.

DPPDPP

EUV Source Workshop, 23 Feb 200318

Development Activities Development Activities Top 3 issues of technology developmentTop 3 issues of technology development

Issue 1 EUV conversion efficiencyIssue 1 EUV conversion efficiency：Optimization of the plasma(Pump pulsewidth, Size, density, Lower reabsorption)

Issue 2 Thermal managementIssue 2 Thermal management:Efficient cooling( Mirror & Chamber)

Issue 3 Background Gas absorptionIssue 3 Background Gas absorption:Efficient pumping, prevent diffusion

Topics for Precompetitive research/developmentTopics for Precompetitive research/developmentTopic 1Topic 1 Higher Repetition RateTopic 2Topic 2 Uniform EmissionTopic 3Topic 3 Stability Improvement

EUV Source Workshop, 23 Feb 200319

Update EUV Source Development Roadmap

EUV Source Performance RoadmapMetrics Mar-03 Sep-04 Mar-06

Demonstrated collectable EUV power in a2% spectral bandwidth in the regionbetween13-14nm (W)

LPP 1 WDPP 5 Wat primary

source

>4 >10

Available collection solid angle (sr) >πEtendue (mm2str) - <1 <1Demonstrated maximum repetition rate(kHz) 1 >5 >5Demonstrated steady state repetition rate(kHz) 1 >5 >5Dissipated total power in source region (atsteady state) (kW) 1 2.5 5Source-facing condenser lifetime (# ofpulses to 10% reflectance loss) - - >5x108

Pulse to pulse intensity stability (3σ ) <10% <10%Pulse to pulse angular stability (3σ ) <10% <5%Key risk areas Efficiency/Thermal

EUV Source Workshop, 23 Feb 200320

SummarySummary

Achieved performanceAchieved performanceLPPLPP-- Average power of Driver laser ~500 Watt@10kHzAverage power of Driver laser ~500 Watt@10kHz-- Plasma Target Plasma Target XeXe jetjet-- EUV inEUV in--band energy per pulse ~0.61band energy per pulse ~0.61 mJmJ / 2%BW , 2/ 2%BW , 2ππ srsr-- EUV conversion efficiency EUV conversion efficiency ~0.53 % / 2%BW , 2~0.53 % / 2%BW , 2ππ srsr

DPPDPP-- EUV inEUV in--band energy per pulse ~8band energy per pulse ~8 mJmJ//srsr-- EUV conversion efficiency with EUV conversion efficiency with Xe Xe ~0.15 %/~0.15 %/srsr-- Repetition rateRepetition rate

Continuous mode operation 10HzContinuous mode operation 10HzBurst mode operation 400HzBurst mode operation 400Hz

EUV Source Workshop, 23 Feb 200321

Acknowledgements

This work was performed under the management of

Extreme Ultraviolet Lithography System Development AssociationExtreme Ultraviolet Lithography System Development Association

　　　　　　　　,

a research and development program of

METIMETI.