Extended eklavya solar

Eklavya Solar ProjectBY ADISHAKTI SURYANSHI TECHNOLOGY

Solar Cell: Design relicsConceptualization & Design Development”(extended)

Member No 137343

The solar cell widely adopt technology across the world.Ekalvya Solar pioneered are developed a piece of technology which give phenomenal response in wec 2016 . These paper give a short view the interrelationship between different Parameter of solar cell The synthetic research are prominent role for developing these paper and overview of it.This is small version which correct the data related to Journal .We want to give virtual design of solar cell to enhance better possibility of combination of finger & bus bar .These software give a under lab condition to define basic solar cell esp Mr. Green research paper . we also release test condition for different solar parameter as Annexure A for future release

Introduction

We are previously work on different model using software like Griddler.These paper clearly worked on the development on Design algorithm of grid & metallization process .Relationship of parameter are set design made by griddler and relationship mapping is done with the Graph. Additionally as it is weekend version it is strongly provided of solar cell fundamental & Basics

.

Solar cell basic

Previously we more exciting which variation of finger width to the power losses .Now we concentrate on the more define design , distilled inside picture through spectral view & modeling through stabilize simulator

Shockley–Queisser limit

Most basic work for solar cell are define limit of solar cell.It defines as the maximum theoretical efficiency under the Standard single p-n junction to generate the maximum power of cell. The theoretical value single junction photovoltaic cell is 31 %.The efficiency are limited due to loss: Blackbody radiation,Recombination,Spectrum losses,Impedance matching &Limited mobility


One of interesting fact is that Multi Crystalline is less efficiency than mono crystalline because recombination loss in grain boundary of multi crystalline solar cell

Cell Fundamentals

Photovoltaic are best known as a method for generating electric power by using solar cells to convert energy from the sun into a flow of electrons. The photovoltaic effect refers to photons of light exciting electrons into a higher state of energy, allowing them to act as charge carriers for an electric current.

The operation of a photovoltaic (PV) cell requires 3 basic attributes:

The absorption of light, generating either electron-hole pairs or exactions. The separation of charge carriers of opposite types. The separate extraction of those carriers to an external circuit.If we consider generic cell are as follow

As we sees the diagram it have three part one Thick P doped region-thin n doped reason & diffusion layer where neutral layer by junction two different layer.

The Regeneration & recombination process of electron are take when the photon with sufficient energy are strike on the process .The electron are start flow and hole is created ,This process is called Regeneration & when the hole & electron are combine it called Recombination .Thumb Role inside the material is to minimize the Recombination process & maximize of Regeneration process .

According to favorable situation the regeneration take place in emitter process & recombination process take in the base Region(P- type) Although under the standard condition , about 49% of regeneration process at base region .This is disadvantage that thermal electron lifetime very less .So BSf so introduced into the

Base

BSF

https://en.wikipedia.org/wiki/Photovoltaic_effect


cell. It acts as mirror and cause to ray multi layerscattering absorption.This is lead based regeneration of pair is less than 21%

The example using adept software to get light of influence of Bsf& showing that the change of energy by 0.13 ev. Same example show the difference of parameter

with Bsf& without BSFParametric shown ideally simulate Result.

Quantum efficiency

The Quantum efficiency is point parameter which used to defined the solar cell mathematically


where Voc is the open-circuit voltage;where Isc is the short-circuit current; andwhere FF is the fill factorwhere η is the efficiency

Definitions

The fill factor define the real flatness of Iv Curve. solar cell with a higher voltage has a larger possible FF since the "rounded" portion of the IV curve takes up less area. The maximum theoretical FF from a solar cell can be determined by differentiating the power from a solar cell with respect to voltage and finding where this is equal to zero

The open-circuit voltage is the maximum voltage at when all current is equal zero. The open-circuit voltage corresponds to the amount of forward bias on the solar cell due to the bias of the solar cell junction with the light-generated current

The short-circuit current is maximum current at which all resistance is zero. The short-circuit current is due to the generation and collection of light-generated carriers Here we are using current density define the cell current properties. If we want to change into current area X thickness

Illuminated Current IL is the light generated current inside the solar cell and is the correct term to use in the solar cell equationIt is also difference with

short circuit current which is define the current flow in the internal current


Simulation

Equivalent circuit of cell:

The solar cell can simply with the help of one diode model in which the the light illuminated current as act source of current which denoted by JL .The Forward bias diode shown are solar cell which followed by series resistance & shunt resistance .

the load current defined short circuit current

The diagram shown the 2 diode model, The diode shown forward bias shown emitter –diffusion layer .The another have function is negligible small ,so we are

neglected for the solar cell functioning so the diode series resistance & shunt resistance are taking in account .These resistance are taking of loss due shading , contact resistance & other loss .The R shunt ina optimize level are good for fill

factor .so better it could after wards on r shunt & r series

Shunt Resistance:

The shunt resistance are parallel component in Equivalent circuit diagram .It is one important component for deciding of the efficiency. Shunt resistance refer to the defect loss in solar cell. Optimized shunt resistance is needed for good solar cell

and it greatly impact on Fill factor of the solar cell .Low shunt resistance create a


alternative current flow path in the solar cell which lead to produce of Leakage current . High Shunt resistance is lead to create localized heatspot in the cell

which lead failure of the cell.

Series ResistanceThe series resistance is series components of Equivalent circuit of solar cell. This

is mainly cause by three reason:1. The movement of current through the emitter and base of the solar cell

2. The contact resistance between the metal contact and the silicon3. The resistance of the top and rear metal contacts.

Series resistance does not affect the solar cell at open-circuit voltage since the overall current flow through the solar cell, and therefore through the series

resistance is zero. However, near the open-circuit voltage, the IV curve is strongly affected by the series resistance.

The series & shunt resistance is given by:

We are considering for spectral or process value as collector design under investigation

We are developed on the basis on collector design (Bus Bar + Finger design ) using Gridler software which are based by finite element method


The upper diagram showrelationship between minimum finger width with the efficiency theoretical Euetatic point are around 60 micron But we goes for 45

micron as no of spacing less(Finger no 108)

So we Start some result

We input basic inputFront Surface

No of finger : 108No of bus bar :3Bb Width : 1 mmFinger Width:45Single print print

We input basic inputBack Surface

No of finger : Full PrintNo of bus bar :3

Bb Width : 3.8 mmPadded No : 4

Pad Centre Line: .980 mmThis is generalized model autocad .dfx of cell

This daigram show itensity of voltage our whole current system .We will maximum at the BUsbar & near by area


Diode Volatge at 500 mV(Front sid2.This daigram show itensity of Lmininous e our whole current system .We will minimum at the BUsbar

& near by area

Luminous at 500 mV3.This daigram show itensity of collecting current our whole current system .We will minimum at the

BUsbar


Current Density at 500 mV

Result I V curve is as follow

Losses Distribution chart


The quantum efficiency is always small total efficiency The loss are in Design are in graph


These graph are showing Loss Distribution under STP condition Result:

Maximum diode voltage are occur at Bus Bar near By area Minimum Collecting Current occur at the bus bar

When the increase the width of Bus bar then it is decrease of efficiency

Effect of Bus Bar Width With the Various Parameter:

Sno BUS baRwidh Eff Fill F Voc Jsc


1 0.7 20.11 80.75 0.66 37.722 0.8 20.07 80.75 0.66 37.643 0.9 20.02 80.76 0.66 37.674 1 19.98 80.77 0.66 37.55 1.1 19.94 80.78 0.66 37.426 1.2 19.9 80.78 659 37.357 1.3 19.85 80.79 659 37.288 1.4 19.81 80.79 659 37.21

0.700000000000001

0.8 0.9 1 1.1 1.2 1.3 1.4

20.1120.07

20.0219.98

19.9419.9

19.8519.81

Eff Graph

Series1Linear (Series1)

Bus Bar WIdth

Eff:

0.700000000000001

0.8 0.9 1 1.1 1.2 1.3 1.436.9

37

37.1

37.2

37.3

37.4

37.5

37.6

37.7

37.8 37.7237.64 37.67

37.537.42

37.3537.28

37.21

ISC Graph

Series1 Linear (Series1)

Thank You All The Person To Show the Interest my Working .ThIs is conceptualization model like cad but give theoretical overview of solar cell

Extended Version(V 2.0.1/)


This analysis give detailed graph analysis impact of parameter with the no of Bus bar on the 108 finger solar cell

Bus bar Vs front Shading loss

BB Front shading (W/cm2)2 0.993 1.134 1.95 1.6

2

3

4

5

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

Power Loss

Bus B

ar

The maximum loss are in 4 bb the trend shown the loss in 5 bb less due better grid distribution 5 than 4

Bus Bar Vs Power OutputBB Power Output2 19.853 19.864 20.065 20


v

1.5 2 2.5 3 3.5 4 4.5 5 5.519.7

19.8

19.9

20

20.1

BB VS POWER O/P

Bus Bar

Pow

er O

utpt

The maximum power output are in 4 bb . The trend shown first increase to 4 then decreaseBus bar vs Jsc

BB JSC2 37.883 37.634 37.545 37.36

2 3 4 537

37.1

37.2

37.3

37.4

37.5

37.6

37.7

37.8

37.9

38

No Of Bus Bar

Isc

The trend shown the short circuit current are decrease with increase of bb .The lowest is in 5 (the series resistance increase due to metallization

Bus bar vs Fill factor

BB Fill factor2 79.39


3 80.14 81.25 81.39

2 3 4 578

78.5

79

79.5

80

80.5

81

81.5

82

Bus bar

Fill

Fact

or

The Fill factor is increase with increase of no of bus bar. show maximum are at 5 bb

Bus bar Vs Front Resistive Loss

BB Front Resistive Loss2 1.483 0.574 1.65 1.3

2

3

4

5

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

Front Resistive loss

Bus b

ar


The front Resistive is maximum at 4 bb .This trend unusual but region which ,metallization per unit area are more

Bus Bar Vs Efficiency

BB eff2 19.873 19.894 20.125 20.06

2

3

4

5

19.7 19.75 19.8 19.85 19.9 19.95 20 20.05 20.1 20.15

Efficency

Bus B

ar

The maximum efficiency in bus bar in 4 bus bar but decrease in 5 bus bar

Bus Bar Vs semiconductor LossBB Semiconductor loss2 0.163 0.164 0.165 0.15

2

3

4

5

0.144 0.146 0.148 0.15 0.152 0.154 0.156 0.158 0.16 0.162

Semiconductor Loss

Bus B

ar

The minimum loss are in bus bar 5


Result:

Main condition the no of finger that is 108 . we found behave of solar cell is if we change of number bus bar .Maximum efficiency is given in 4 Bus bar in 108 finger under set condition. The short circuit current is always shown decrease trend with the increase of number Bus bar .The fill factor is increased with increased of No of bus bar .The maximum power are generated in 4 bus bar

Credit

Sri satya are pioneered for development of this extended for deep information about this paper .This is extended version which extended & define relationship. Ms Aditi chauhan & Mr Divya also thank for valuable feedback for the same.

This work done under the Adishakti Suryanshi Technology which are copyright work (Reg no W0XC-DR5Z-Y3J4-BI42)

Regards

Prateek verma

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Extended eklavya solar