Features - Digi-Key Sheets/Semtech PDFs... · 2019-11-25 · RClamp0512TQ Final Datasheet Rev 6.0 December 17, 2015 Page 2 Semtech Parameter Symbol Conditions Min. Typ. Max. Units

RClamp0512TQFinal Datasheet Rev 6December 17, 2015

www.semtech.com Page 1 Semtech

RClamp0512TQ

PROTECTION PRODUCTS

Features• TransientProtectionto

IEC61000-4-2(ESD)30kV(Air),30kV(Contact) IEC61000-4-4(EFT)4kV(5/50ns) IEC61000-4-5(Lightning)20A(8/20µs) ISO-10605(ESD)30kV(Air),30kV(Contact)

• QualifiedtoAEC-Q100,Grade1• VerySmallPCBArea:0.6mm2

• ProtectsTwoHigh-SpeedDataLines• WorkingVoltage:5V• LowCapacitance:3pFMaximum• DynamicResistance:0.075Ohms(Typ)• Solid-StateSilicon-AvalancheTechnology

Mechanical Characteristics• SGP1006N3TPackage• Pb-Free,HalogenFree,RoHS/WEEECompliant• NominalDimensions:1.0x0.60x0.40mm• LeadFinish:NiAu• MoldingCompoundFlammabilityRating:UL94V-0• Marking:MarkingCode+DotMatrixDateCode• Packaging:TapeandReel

Applications• AutomotiveApplications• IndustrialEquipment• IntegratedMagnetics/RJ-45Connectors• 10/100/1000Ethernet• 2.5GbE• USB2.0

Nominal Dimensions in mm

Nominal Dimensions Functional Schematic

Low Capacitance RailClamp® 2-Line Surge and ESD Protection

Device Schematic

DescriptionRClamp®0512TQisspecificallydesignedtoprovidesecondarysurgeandESDprotectiononhigh-speedports.RClamp0512TQintegrateslowcapacitance,surge-ratedsteeringdiodeswithahighpowertransientvoltagesuppressor(TVS).TheTVSutilizessnap-backor“crow-bar”technologytominimizedeviceclampingvoltageandfeatureshighsurgecurrentcapabilityof20A(tp=8/20us).ESDcharacteristicsarehighlightedbyhighESDwithstandvoltage(+/-30kVperIEC61000-4-2)andextremelylowdynamicresistance(0.075Ohmstypical).Eachdevicewillprotecttwolinesoperatingat5voltsandarequalifiedtoAEC-Q100,Grade1(-40to+125oC)forautomotiveapplications.

RClamp0512TQisina3-pinSGP1006N3Tpackage.Itmeasures1.0x0.6mmwithanominalheightofonly0.4mm.Theleadsarefinishedwithlead-freeNiAu.Theflow-throughpackagedesignsimplifiesPCBlayout.

1.00

0.40

0.60

0.701 2

1 2

3

RClamp0512TQFinal Datasheet Rev 6.0December 17, 2015


Parameter Symbol Conditions Min. Typ. Max. Units

ReverseStand-OffVoltage VRWM

-40OCto125OCBetweenanytwopins

5 V

ReverseBreakdownVoltage VBR

It=10mA,Pin1or2toPin3

-40OCto125OC 6.5 9.5 11.5 V

HoldingCurrent IH T=25OC 75 150 250 mA

ReverseLeakageCurrent IR VRWM=5VT=25OC 0.01 0.100 μA

T=125OC 0.03 0.250 μA

ClampingVoltage(3) VC

IPP=20A,tp=1.2/50µs,Pin1or2toPin3

5 8.5 V

ESDClampingVoltage(4) VC

IPP=4A,tp=0.2/100ns(TLP)Pin1or2toPin3

4.3 V

ESDClampingVoltage(4) VC

IPP=16A,tp=0.2/100ns(TLP)Pin1or2toPin3

5.2 V

DynamicResistance(4),(5) RDYN

tp=0.2/100ns(TLP)Pin1or2toPin3

0.075 Ohms

JunctionCapacitance CJ

VR=0V,f=1MHzPin1or2toPin3

T=25OC 2 3 pF

VR=0V,f=1MHzPin1toPin2

T=25OC 1.1 2 pF

Notes:(1): ESD Gun return path to Ground Reference Plane (GRP)(2): ESD Gun return path to Horizontal Coupling Plane (HCP); Test conditions: a)150pF/330pF, 330W b) 150pF/330pF, 2kW(3): Measured using a 1.2/50us voltage, 8/20us current combination waveform, RS = 8 Ohms. Clamping is defined as the peak voltage across the device after the device snaps back to a conducting state.(4): Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, ITLP and VTLP averaging window: t1 = 70ns to t2 = 90ns.(5): Dynamic resistance calculated from ITLP = 4A to ITLP = 16A

Absolute Maximum Ratings

Electrical Characteristics (T=25OC unless otherwise specified)

Rating Symbol Value UnitsPeakPulsePower(tp=1.2/50µs) PPK 170 W

PeakPulseCurrent(tp=1.2/50µs) IPP 20 A

ESDperIEC61000-4-2(Contact)(1)

ESDperIEC61000-4-2(Air)(1)VESD

±30±30

kV

ESDperISO-10605(Contact)(2)

ESDperISO-10605(Air)(2)VESD

±30±30

kV

OperatingTemperature TJ -40to+125 OC

StorageTemperature TSTG -55to+150 OC



Typical Characteristics

Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve

Clamping Characteristic (20A, 1.2/50us Pulse)

ESD Clamping (+8kV Contact per IEC 61000-4-2)

0

5

10

15

-10 0 10 20 30 40 50

Cla

mpi

ng V

otla

ge (V

)

Time (us)

Waveform Parameters:1.2/50µs (Voltage) / 8/20µS

(Current) combination waveform with 8Ω source impedance.

Injected current = 20APin 1 or Pin 2 to Pin 3

TA = 25OC

0

10

20

30

40

50

60

-10 0 10 20 30 40 50 60 70 80

Cla

mpi

ng V

olta

ge -

V C(V

)

Time (ns)

Measured with 50 Ohm scope inputimpedance, 2GHz bandwidth. Correctedfor 50 Ohm, 26dB attenuator. ESD gunreturn path connected to ESD ground plane.

-5

0

5

10

15

20

25

30

0 2 4 6 8 10 12

TLP

Cur

rent

(A)

Clamping Voltage (V)

Transmission Line Pulse Test(TLP) Settings:tp = 100ns, tr = 0.2ns,ITLP and VTLP averaging window:t1 = 70ns to t2 = 90nsPin 1 or Pin 2 to Pin 3

-30

-25

-20

-15

-10

-5

0

-10 0 10 20 30 40 50 60 70 80

Cla

mpi

ng V

olta

ge -

V C(V

)

Time (ns)

Measured with 50 Ohm scope inputimpedance, 2GHz bandwidth. Correctedfor 50 Ohm, 26dB attenuator. ESD gunreturn path connected to ESD ground plane.

0.01

0.1

1

10

0.1 1 10 100 1000

Peak Pulse Pow

er ‐P P

P(kW)

Pulse Duration ‐ tp (µs)

DR040412‐170

TA = 25OC

0

20

40

60

80

100

120

0 25 50 75 100 125 150

% of R

ated

Pow

er or I

PP

Ambient Temperature ‐ TA (OC)

DR040512:25:125:150

TLP IV Curve (Positive Pulse)

ESD Clamping (-8kV Contact per IEC 61000-4-2)



Typical Characteristics

ESD Clamping (+15kV Contact per ISO-10605 150pF, 330W) ESD Clamping (-15kV Contact per ISO-10605 150pF, 330W)

ESD Clamping (+15kV Contact per ISO-10605 330pF, 330W)

ESD Clamping (+15kV Contact per ISO-10605 330pF, 2kW)

-10

0

10

20

30

40

50

60

70

-10 0 10 20 30 40 50 60 70 80

Cla

mpi

ng V

olta

ge -

V C(V

)

Time (ns)

330pF and 330 Ohm with 50 Ohm scope input impedance, 2GHz bandwidth. Corrected for 50 Ohm, 26dB attenuator. ESD gun return path connected to horizontal coupling plane.

-10

0

10

20

30

40

50

60

70

-10 0 10 20 30 40 50 60 70 80

Cla

mpi

ng V

olta

ge -

V C(V

)

Time (ns)

330pF and 2k Ohm with 50 Ohm scope input impedance, 2GHz bandwidth. Corrected for 50 Ohm, 26dB attenuator. ESD gun return path connected to horizontal coupling plane.

-50

-40

-30

-20

-10

0

10

20

-10 0 10 20 30 40 50 60 70 80

Cla

mpi

ng V

olta

ge -

V C(V

)

Time (ns)


-50

-40

-30

-20

-10

0

10

20

-10 0 10 20 30 40 50 60 70 80

Cla

mpi

ng V

olta

ge -

V C(V

)

Time (ns)

330pF and 2k Ohm with 50 Ohm scope input impedance, 2GHz bandwidth. Corrected for 50 Ohm, 26dB attenuator. ESD gun return path connected to horizontal coupling plane.

-10

0

10

20

30

40

50

60

70

-10 0 10 20 30 40 50 60 70 80

Cla

mpi

ng V

olta

ge -

V C(V

)

Time (ns)


-40

-35

-30

-25

-20

-15

-10

-5

0

5

10

-10 0 10 20 30 40 50 60 70 80

Cla

mpi

ng V

olta

ge -

V C(V

)

Time (ns)


ESD Clamping (-15kV Contact per ISO-10605 330pF, 330W)

ESD Clamping (+15kV Contact per ISO-10605 330pF, 2kW)



Typical Characteristics (Continued)

Capacitance vs. Reverse Voltage Capacitance vs. Temperature

Insertion Loss - S21 Analog Crosstalk

Breakdown Voltage (VBR) vs. Temperature

0

2

4

6

8

10

12

-50 -25 0 25 50 75 100 125 150

Bre

akdo

wn

Volta

ge -

V BR

(V)

Temperature (OC)

IBR = 10mA

-80

-70

-60

-50

-40

-30

-20

-10

0

10 100 1000 10000

Cro

ssta

lk-C

T (d

B)

Frequency (MHz)

‐3

‐2

‐1

0

1 10 100 1000

Insertion Loss ‐IL (d

B)

Frequency (MHz)

Pin 1 to 2

Pin 1 to 3 Pin 2 to 3

0

0.5

1

1.5

2

2.5

3

0 1 2 3 4 5 6

Junc

tion

Capa

cita

nce

-CJ

(pF)

Voltage (V)

f = 1 MHz

Pin 1 to 3 Pin 2 to 3

Pin 1 to 2

0

1

2

3

4

5

6

-50 -25 0 25 50 75 100 125 150

Junc

tion

Capa

cita

ncs

-CJ

(pF)

Temperature (°C)

VR = 0V

VR = 5V

f = 1MHzPin 1 or 2 to Pin 3



Application Information

Device Operation

Thisdeviceutilizesamulti-junctionstructurethatisdesignedtoswitchtoalowvoltagestatewhentriggeredbyESD,EOS,orothertransientevents.Duringnormaloperation,thedevicewillpresentahigh-impedancetothecircuitforvoltageuptotheworkingvoltage(VRWM)ofthedevice.Whenthevoltageacrossthedeviceterminalsexceedsthebreakdownvoltage(VBR),avalanchebreakdownoccursintheblockingjunctioncausingthedeviceto“snap-back”orswitchtoalowimpedanceon-state.Thishastheadvantageofloweringtheoverallclampingvoltage(VC)asESDpeakpulsecurrent(IPP)flowsthroughthedevice.Oncethecurrentdecreasesbelowtheholdingcurrent(IH),thedevicewillreturntoahigh-impedanceoff-state.

Characteristic Curve

VRWM VBR

IR

IPP

VC

“Snap-Back”

IH

VH

Table1-ParameterDefinition

Symbol Parameter

VRWM MaximumWorkingVoltage

VBR BreakdownVoltage

VC ClampingVoltage

IH HoldingCurrent

IR ReverseLeakageCurrent

IPP PeakPulseCurrent




Figure 1 - 1GbE / 2.5GbE Protection Circuit

1

234

8

567

RJ-4

5

Ethe

rnet

PHY

1GbE

/ 2.

5GbE

RClamp0512TQ

RClamp0512TQ

RClamp0512TQ

RClamp0512TQ

1

2

3

1

2

3

1

2

3

1

2

3

intheprotectionpathshouldbeminimizedbylocatingRClamp0512TQasphysicallyclosetothemagneticsaspossible,andpreferablyonthesamesideofthePCB.ReducingparasiticinductanceisespeciallyimportantforsuppressingfastrisetimetransientssuchasESDandEFT.Inductanceinthepathoftheprotectiondeviceincreasesthepeakclampingvoltageseenbytheprotect-eddevice(V=Ldi/dt).Forexample,1nHofinductancecanincreasethepeakclampingvoltageby30Vfora30A(8kV)ESDpulsewitha1nsrisetime.DifferentialpairsareroutedthrougheachRClamp0512TQatpins1and2.Pin3ofthedeviceisnotconnected.

PlacingtheprotectiononthePHYsideofthemagneticsisadvantageousinthatthemagnitudeanddurationofthesurgeisattenuatedbythetransformerwindings.Theamountofattenuationwillvarybyvendorandconfig-urationofthemagnetics.TheEthernettransformerhastobeabletosupporttheimpulsetestswithoutfailure.AtypicalEthernettransformercanwithstandafewhundredamperes(tp=8/20us)beforefailureoccurs,butthisneedstobeverifiedbytesting.Alternatively,theprotectioncanbeplacedonthelinesideofthetrans-former.However,theadditionalprotectionaffordedbythetransformerislost,andtheabilityofthesystemtowithstandhighenergysurgesislimitedtothecapabilityoftheprotectiondevice.

Ethernet ProtectionEthernetportsareexposedtoexternaltransienteventsintheformofESD,EFT,lightning,andcabledischargeevents(CDE).TeststandardsthatmodeltheseeventsincludeIEC61000-4-2forESD,IEC61000-4-4forEFT,andIEC61000-4-5andGR-1089forlightning.AnyoftheseeventscancausecatastrophicdamagetothePHYIC.

WhendesigningEthernetprotection,theentiresys-temmustbeconsidered.Over-voltageeventscanbecommonmode(withrespecttoground)ordifferen-tial(line-to-line).AnEthernetportincludesinterfacemagneticsconsistingoftransformersintegratedwithcommonmodechokes.ThetransformercentertapsareconnectedtogroundviaanRCnetworkor“BobSmith”termination.Thepurposeofthisterminationistoreducecommonmodeemissions.Thetransformerprovidescommonmodeisolationtotransientevents,butnoprotectionfordifferentialsurges.Duringadifferentialtransientevent,currentwillflowthroughthetransform-er,chargingthewindingsonthelineside.Energyistransferredtothesecondaryuntilthesurgesubsidesorthetransformersaturates.

AtypicalprotectionschemewhichutilizestheRClamp0512TQisshowninFigure1.ThedevicesarelocatedonthePHYsideofthetransformerwithonedeviceplacedacrosseachlinepair.Parasiticinductance




Figure 3 - USB 3.1 Type-A Protection ExampleFigure 2 - USB 3.0 Type-A Protection Example

USB 3.0 - Type AHost Connector

RClamp0512TQ

RClamp3324T

VBus

D-

D+

SSTX+

SSTX-

SSRX+

SSRX-

GND

GND

Via to GroundLanding PadDevice OutlineTrace

uClamp0571P

USB 3.1 - Type AHost Connector

RClamp0512TQ

VBus

D-

D+

SSTX+

SSTX-

SSRX+

SSRX-

GND

GND

RClamp0561Z

RClamp0561Z

RClamp0561Z

RClamp0561Z

Via to GroundLanding PadDevice OutlineTrace

uClamp0571P

RClamp0561Zhasamaximumcapacitanceof0.15pFallowingittobeusedontransmissionlinesoperatinginexcessof10GHz.Singlelinedevicesmakeiteasierforthedesignertoroutethetracesandmaintainequaldistancebetweenthedifferentialpairsformaximumsignalinteg-rity.

SinglelinedevicessuchasuClamp0571Parerecom-mendedforsurgeandESDprotectionoftheVBusline.ThisdevicefeatureshighsurgeandESDcapabilityandmaybeusedon5Vpowerrails.Inpowerdelivery(PD)applications,higherworkingvoltageTVSdevicemaybeneeded.OptionsexistforESDandsurgeprotectionupto24V.

Device PlacementPlacementoftheprotectioncomponentisacriticalele-mentforeffectiveESDsuppression.TVSdiodesshouldbeplacedasclosetotheconnectoraspossible.Thishelpsreducetransientcouplingtonearbytraces.Groundconnectionsshouldbemadedirectlytothegroundplaneusingmicro-vias.Thisreducesparasiticinductanceinthegroundpathandminimizestheclamp-ingvoltageseenbytheprotecteddevice.

USB Interface ProtectionRClamp0512TQmaybeusedtoprotectD+andD-linesinUSB2.0,USB3.0,andUSB3.1applications.Ineachcase,USBD+andD-pinsareroutedthroughRClamp0512TQatpin1andpin2.Pin3isconnectedtothegroundplane.Figures2and3belowareexamplesofprotectingUSB3.0and3.1Type-Ainterfaces(hostsideshown).

ForUSB3.0applications,RClamp3324Tisrecommendedforprotectingthe5Gb/sSuperSpeedlinepairs.Linesareroutedthroughthedeviceatpins1-4.Tracesshouldbekeptthesamelengthtoavoidimpedancemismatch.Groundisconnectedatpins5and6.ThedifferentialimpedanceofeachpaircanbecontrolledforUSB3.0(85Ohms+/-15%)whilemaintainingaminimumtrace-to-traceandtrace-to-padspacing.IndividualPCBdesignconstraintsmaynecessitatedifferentspacingortracewidth.Bothgroundpadsshouldbeconnectedforop-timalperformance.Groundconnectionismadeusingfilledvia-in-pad.Additionalinformationmaybefoundonthedevicedatasheet.

ForUSB3.1applications,RClamp0561Zisrecommendedforprotectingthe10Gb/sSuperSpeed+linepairs.Onedeviceisconnectedbetweeneachlineandground.



Applications Information Assembly Guidelines

Thesmallsizeofthisdevicemeansthatsomecaremustbetakenduringthemountingprocesstoinsurereliablesolderjoints.ThefigureattherightdetailsSemtech’srecommendedmountingpattern.RecommendedassemblyguidelinesareshowninTable2.Notethattheseareonlyrecommendationsandshouldserveonlyasastartingpointfordesignsincetherearemanyfactorsthataffecttheassemblyprocess.Exactmanufacturingparameterswillrequiresomeexperimentationtogetthedesiredsolderapplication.Semtech’srecommendedmountingpatternisbasedonthefollowingdesignguidelines:

Land PatternTherecommendedlandpatternfollowsIPCstandardsandisdesignedformaximumsoldercoverage.Detaileddimensionsareshownelsewhereinthisdocument.

Solder StencilStencildesignisoneofthekeyfactorswhichwilldeterminethevolumeofsolderpastewhichisdepositedontothelandpad.Thearearatioofthestencilaperturewilldeterminehowwellthestencilwillprint.Thearearatiotakesintoaccounttheapertureshape,aperturesize,andstencilthickness.Anarearatioof0.70–0.75ispreferredforthesubjectpackage.Thearearatioofarectangularapertureisgivenas:

AreaRatio=(L*W)/(2*(L+W)*T)

Where:L=ApertureLengthW=ApertureWidthT=StencilThickness

Semtechrecommendsastencilthicknessof0.100mmforthisdevice.Thestencilshouldbelasercutwithelectro-polishedfinish.Thestencilshouldhaveapositivetaperofapproximately5degrees.Electropolishingandtaperingthewallsresultsinreducedsurfacefrictionandbetterpasterelease.Duetothesmallaperturesize,asolderpastewithType4orsmallerparticlesarerecommended.Assuminga100umthickstencil,theaperturedimensionsshownwillyieldanarearatioofapproximately0.75.

Recommended Mounting Pattern

Stencil Opening (0.220 x 0.480 mm)

Land Pad (0.200 x 0.430 mm)

All Dimensions are in mm.

Component

1.000

.850

Table 2 - Recommended Assembly Guidelines

Assembly Parameter Recommendation

SolderStencilDesign LaserCut,Electro-Polished

ApertureShape Rectangular

SolderStencilThickness 0.100mm(0.004”)

SolderPasteType Type4sizesphereorsmaller

SolderReflowProfile PerJEDECJ-STD-020

PCBSolderpadDesign Non-SolderMaskDefined

PCBPadFinish OSPorNiAu



Outline Drawing - SGP1006N3T

Land Pattern - SGP1006N3T

b

bbbaaaN

e

D

DIM

A1A

0.250.15 0.20

0.080.10

3

1.00

0.70 BSC

MILLIMETERSMAX

0.050.45

DIMENSIONS

MIN

0.00

NOM0.35

0.0150.40

CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).NOTES:

1.

0.60E1.0750.95

0.55 0.675

PIN 1INDICATOR

(LASER MARK)

SEATINGPLANE

L 0.20 0.25 0.30

1

N

2

D

bbb C A B

C

aaa C

BA

E

D/2

A1

A

e/2

e

LxN

bxN

(0.025-0.075)E/2

THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR

NOTES:

2.

COMPANY'S MANUFACTURING GUIDELINES ARE MET.

1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).

DIM

XY

CMILLIMETERS

(0.42)

0.200.43

DIMENSIONS

0.85Z

P 0.70

YZ

X

P/2

P

(C)



Marking Code

Tape and Reel Specification - Paper Tape, 2mm Pitch

50

Notes: Marking will also include line matrix date code

505050

Pin 1 Location(Towards Sprocket Holes)



Tape and Reel Specification - Plastic Tape, 4mm Pitch

Ordering Information

Part Number Qty per Reel Reel Size Carrier Tape PitchRClamp0512TQTNT 10000 7Inch Paper 2mmRClamp0512TQTCT 3000 7Inch Plastic 4mmRailClampandRClampareregisteredtrademarksofSemtechCorporation.

50 50 50

Pin 1 Location(Towards Sprocket Holes)


Page 13 Semtech

Contact Information

Semtech Corporation200 Flynn Road, Camarillo, CA 93012

Phone: (805) 498-2111, Fax: (805) 498-3804www.semtech.com

IMPORTANT NOTICE

Information relating to this product and the application or design described herein is believed to be reliable, however such information is provided as a guide only and Semtech assumes no liability for any errors in this document, or for the application or design described herein. Semtech reserves the right to make changes to the product or this document at any time without notice. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. Semtech warrants performance of its products to the specifications applicable at the time of sale, and all sales are made in accordance with Semtech’s standard terms and conditions of sale.

SEMTECH PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS, OR IN NUCLEAR APPLICATIONS IN WHICH THE FAILURE COULD BE REASONABLY EXPECTED TO RESULT IN PERSONAL INJURY, LOSS OF LIFE OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. INCLUSION OF SEMTECH PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE UNDERTAKEN SOLELY AT THE CUSTOMER’S OWN RISK. Should a customer purchase or use Semtech products for any such unauthorized application, the customer shall indemnify and hold Semtech and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs damages and attorney fees which could arise.

The Semtech name and logo are registered trademarks of the Semtech Corporation. All other trademarks and trade names mentioned may be marks and names of Semtech or their respective companies. Semtech reserves the right to make changes to, or discontinue any products described in this document without further notice. Semtech makes no warranty, representation or guarantee, express or implied, regarding the suitability of its products for any particular purpose. All rights reserved.

© Semtech 2015

Documents

Features - Digi-Key Sheets/Semtech PDFs... · 2019-11-25 · RClamp0512TQ Final Datasheet Rev 6.0 December 17, 2015 Page 2 Semtech Parameter Symbol Conditions Min. Typ. Max. Units