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First results with non- irradiated and heavily irradiated microstrip trenched detectors 1 University of Liverpool *Dean Forshaw, G. Casse, T, Huse, I. Tsurin, M. Wormald CNM Guilio Pellegrini et al 19th RD50 Workshop – CERN, 21-23 November 2011

First results with non-irradiated and heavily irradiated microstrip trenched detectors

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First results with non-irradiated and heavily irradiated microstrip trenched detectors. University of Liverpool *Dean Forshaw , G. Casse , T, Huse , I. Tsurin , M. Wormald CNM Guilio Pellegrini et al. 19th RD50 Workshop – CERN, 21-23 November 2011. 1. Contents. Detector designs - PowerPoint PPT Presentation

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Page 1: First results with non-irradiated and heavily irradiated  microstrip  trenched detectors

First results with non-irradiated and heavily irradiated microstrip trenched

detectors

1

University of Liverpool*Dean Forshaw, G. Casse, T, Huse, I. Tsurin, M. Wormald

CNMGuilio Pellegrini et al

19th RD50 Workshop – CERN, 21-23 November 2011

Page 2: First results with non-irradiated and heavily irradiated  microstrip  trenched detectors

Contents

2

•Detector designs

•TCAD simulations

•Results of CCV and IV measurements before and after

neutron irradiation

19th RD50 Workshop – CERN, 21-23 November 2011

Page 3: First results with non-irradiated and heavily irradiated  microstrip  trenched detectors

19th RD50 Workshop – CERN, 21-23 November 2011

MotivationProject: fabricate a p-type strip detector with small gain -> Similar signal before and

after irradiation

• Multiplication occurs at low bias voltage

• Gain should be limited between 2 and 10:

- Avoid Crosstalk

- Avoid exceeding the dynamic range of readout electronics

• Capacitance should not increase significantly

- Higher capacitance -> Higher noise

You may remember Guilio Giving a presentation on these sensors at 17th RD50 workshop

TCAD simulations done by Pablo Fernánde at CNM

Many thanks to all there Hard work on simulation and Fabrication

Page 4: First results with non-irradiated and heavily irradiated  microstrip  trenched detectors

Basic detector information

4

NinP type strip detectors with trenched electrodes

Single chip - 1cm2 area

Strip pitch 80um with p-stop isolation structures

Device Simulation and fabricated done by CNM

6 Guard Ring structure used, proved operation at 1000v

AC coupled

19th RD50 Workshop – CERN, 21-23 November 2011

1 standard P-stop design used a reference 5 trench structures simulated → Fabricated → Measured

Page 5: First results with non-irradiated and heavily irradiated  microstrip  trenched detectors

Poly trench

P-type diffusion

19th RD50 Workshop – CERN, 21-23 November 2011

Trenched detector design

n+

Oxide trench

P+ implant under N electrodeCentered, 5um wide

Trench 5, 10 50um deepAll 5um wide in center of N+ electrode

Same as P-type diffusion but with trench through N+

Page 6: First results with non-irradiated and heavily irradiated  microstrip  trenched detectors

19th RD50 Workshop – CERN, 21-23 November 2011

TCAD simulationsReference trenched

P+ diffusion P+ diffusion with oxide filled trench

See NIMA53508 - Simulation of new p-type strip detectors with trench to enhance the charge multiplication effect in the n-type electrodes, P. Ferna ndez-Martı nez et al ́ ́

Page 7: First results with non-irradiated and heavily irradiated  microstrip  trenched detectors

Each wafer featured a couple of variations on trench placementDet A1- trench structure only in active stripsDet A2 – trench structure extended to Bias railDet A3 – trench structure extended to Bias rail and last GR

19th RD50 Workshop – CERN, 21-23 November 2011

Trench, Bias ring and final GR

Note, Only type A1 dets sent for irradiation

Design Variation’s

Page 8: First results with non-irradiated and heavily irradiated  microstrip  trenched detectors

19th RD50 Workshop – CERN, 21-23 November 2011

Waffers received from CNM:

W2 – 5um trench through center of electrodesW3 – 10um trench through center of electrodesW5 – 50um trench through center of electrodes (poor metalisation)W7 – reference, standard N electrodes with P-stopsW16 – P+ implant under N electrode, 5um wideW18 – W16 structure with 5um deep and wide through N electrode

Detectors sent for neutron irradiation, Doses -

1E15 1MeV neq Measured5E15 1MeV neq Measured1E16 1MeV neq Partially Measured2E16 1MeV neq Measured3E16 1MeV neq W2/5 No signal at 1000v

Wafer information/ Irradiation

Page 9: First results with non-irradiated and heavily irradiated  microstrip  trenched detectors

19th RD50 Workshop – CERN, 21-23 November 2011

Initial IV from wafers W2,3,7,16

Page 10: First results with non-irradiated and heavily irradiated  microstrip  trenched detectors

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Alibava Setup

Cooling down to - 45 deg.C (ElCold EL11LT), 1deg.C hysteresis loop

Analogue readout based on the Beetle V1.5 chip(40 MHz readout speed)

Signal generation with 370 Mbq 90Sr fast beta source or IR Laser

(980/1060 nm) for charge collection & sharing studies

Detector attached to aluminium

heat sink and cooled using fans to blow

cold air over/under

detectorScintilator/s placed under/ontop

daughter board for single or coincidence trigger

19th RD50 Workshop – CERN, 21-23 November 2011

Page 11: First results with non-irradiated and heavily irradiated  microstrip  trenched detectors

Un-irradiated CCV

0 50 100 150 200 250 300 350 40014000

16000

18000

20000

22000

24000

26000FRESH CNM trench

W5-#17 NinP FRESHW7-#21 NinP FRESHW16 #14 NinP FRESHW16 #5 NinP FRESHSeries9Series11

Voltage

Char

ge C

olle

cted

(ele

ctro

ns)

19th RD50 Workshop – CERN, 21-23 November 2011

W5 wouldn't Bias, >1ma at 10v

W16 (lightblue), electrode structure extended to Bias Rail

Page 12: First results with non-irradiated and heavily irradiated  microstrip  trenched detectors

19th RD50 Workshop – CERN, 21-23 November 2011

0 200 400 600 800 1000 12000

20

40

60

80

100

120

140

160

180

2001E15 Neutrons CNM Trench IV

W5-#17 NinP 1.00E+15 Neutron 1 62.5W7-#21 NinP 1.00E+15 NeutronW16 NinP 1.00E+15 NeutronW18 NinP 1.00E+15 NeutronSeries9Series11

Voltage

Curr

ent (

uA)

200 300 400 500 600 700 800 900 1000 1100 12005000

7000

9000

11000

13000

15000

17000

19000

21000

23000

25000

1E15 Neutron CNM trench CCVW5-#17 NinP 1.00E+15 NeutronW7-#21 NinP 1.00E+15 NeutronW16 NinP 1.00E+15 NeutronW18 NinP 1.00E+15 NeutronSeries9Series11

Voltage

Char

ge C

olle

cted

(ele

ctro

ns)

CCV/IV @1E15n

W16 showing growth of CC at higher Voltages

Deeper trench’s collect more charge

Currents fairly similar

Not too high

High W3 current most probably due to self heating at high V

Page 13: First results with non-irradiated and heavily irradiated  microstrip  trenched detectors

19th RD50 Workshop – CERN, 21-23 November 2011

0 200 400 600 800 1000 12000

100

200

300

400

500

6005E15 Neutrons CNM trench IV

W5-#14 NinP 5.00E+15 NeutronW7-#14 NinP 5.00E+15 NeutronW16-#23 NinP 5.00E+15 NeutronW18-#15 NinP 5.00E+15 NeutronSeries9Series11

Voltage

Curr

ent u

A

0 200 400 600 800 1000 12002500

4500

6500

8500

10500

12500

14500

165005E15 Neutrons CNM trench CCV

W5-#14 NinP 5.00E+15 NeutronW7-#14 NinP 5.00E+15 NeutronW16-#23 NinP 5.00E+15 NeutronW18-#15 NinP 5.00E+15 NeutronSeries9Series11

Voltage

Colle

cted

Cha

rge

(ele

ctro

ns)

CCV/IV @5E15n

W18 Working!! But Higher current

Trenched dets have enhanced CC compared to reference

P+ Diffusion slight increase on CC

All det designs have higher currents than reference >800v

Page 14: First results with non-irradiated and heavily irradiated  microstrip  trenched detectors

19th RD50 Workshop – CERN, 21-23 November 2011

Cross talk issues

Page 15: First results with non-irradiated and heavily irradiated  microstrip  trenched detectors

CCV/IV @1E16n

19th RD50 Workshop – CERN, 21-23 November 2011

Partially measured

Intersection point for W2 and W5 performance

Higher bias voltages past 500v start to see significant increases in Current

Currents values ok, no sign of thermal runaway at this high dose

Page 16: First results with non-irradiated and heavily irradiated  microstrip  trenched detectors

19th RD50 Workshop – CERN, 21-23 November 2011

CCV/IV @2E16nW18 clearly broken, coupling of channels at odd voltages

Other designs above reference

Deeper trench's have larger CC enhancement

Currents (except for W18) not bad given radical design

W16 Very promising for thin detectors at high fluences

Page 17: First results with non-irradiated and heavily irradiated  microstrip  trenched detectors

Conclusion

1719th RD50 Workshop – CERN, 21-23 November 2011

W16 –(P diffusion) Shows only small gains in multiplication, Design more suited to thinner detectors, able to make thinner detectors with higher charge collection

W2 – (5um trench) higher CC therefore multiplication seen in all neutron does shown, very good CC even at 1E16 neutrons.

W5 – (50um trench) Higher CC at all dose’s most promising design after irradiation, does not work before irradiation

W3 – (10um trench) good CC @1E15 but higher currents than other designs

W18 – (P diffusion + oxide filled trench) poor performance at all dose’s with respect to CC and IV.

ALL designs have cross talk problems at high Neutron dose and Bias Voltage

Page 18: First results with non-irradiated and heavily irradiated  microstrip  trenched detectors

Thank you for your attention

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Any Questions?