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Advances in Microwave & Millimeter-wave Integrated Circuits
Amin K. EzzeddineAMCOM Communications, Inc.
22300 Comsat DriveClarksburg, Maryland 20871, USA
Tel: 301-353-8400 email: [email protected]
الراديو شمس عين جامعة -الهندسة آلية
٢٠٠٧مارس ١٥-١٣
Twenty FourthNational Radio Science Conference(NRSC’2007)
Presentation Outline
• Introduction to MMICs
• MMIC semiconductors and devices
• MMIC manufacturing and packaging
• MMIC design guidelines
• MMIC surveys and examples of novel MMIC circuits
• Conclusion and future trends
Wireless Systems OutlineTX Power
DigitalSignalProcessing
AmpDigitalModulator
BBLO
Amp PA
RF / MWLO
Synthesizer
RF Mixer
CrystalReference
Amp Amp LNA
RF MixerAudio & VideoTransducer
RX Power
RF / MWLO
DigitalDemod.
BBLO
Synthesizer
DigitalSignalProcessing
CrystalReference
Audio & VideoTransducer
MMIC Applications• Linear Components:
–– Switches: SPDT, SPNT, NPMT, ..etcSwitches: SPDT, SPNT, NPMT, ..etc–– Amplifiers: Amplifiers: LNAsLNAs, , PAsPAs, Drivers, Drivers–– Attenuators: Fixed, variable, digitalAttenuators: Fixed, variable, digital–– Phase Shifters: Fixed, variable, digitalPhase Shifters: Fixed, variable, digital
• Nonlinear Components:–– MixersMixers–– Frequency MultipliersFrequency Multipliers–– VCOsVCOs–– Phase DetectorsPhase Detectors–– Integrated Digital Circuits with RF circuitsIntegrated Digital Circuits with RF circuits
• Subsystems– RF front end: Down/Up-converters, LNB– PLL– Transmit/Receive Modules
MIC versus MMIC Solution?
•• MIC Advantages:MIC Advantages:–– Fast & Low Cost DevelopmentFast & Low Cost Development–– Better Performance such as: NF, Efficiency, PBetter Performance such as: NF, Efficiency, P1dB1dB–– Variety of Dielectric MaterialsVariety of Dielectric Materials–– Integration of Different Semiconductor Technologies: Integration of Different Semiconductor Technologies:
MesfetsMesfets, Bipolar, Pin Diodes, Digital, Bipolar, Pin Diodes, Digital……etcetc–– Higher Levels of Integration is possible Higher Levels of Integration is possible
• MMIC Advantages:– Low unit Cost– Performance Uniformity from Unit to Unit– Very Small Size– Very Broadband Performance due to few parasitic effects– Simple Assembly Procedure
Semiconductor Materials for MMICs
High power, limited availabilityHEMT130 W/ºC/mLow8.90.08m2/V/sGallium Nitride (GaN)
mm-wave MESFET, HEMT68 W/ºC/mLow140.60m2/V/sIndium Phosphide (InP)
Very high power below 5GHzMESFET430 W/ºC/mLow100.05m2/V/sSilicon Carbide (SiC)
Mature for low power mixed signal applications
LDMOS, RF CMOS, SiGe HBT (BiCMOS)145 W/ºC/mHigh11.70.14m2/V/sSilicon (Si)
PA, LNA, mixers, attenuators, switches, …etc
MESFET, HEMT, pHEMT, HBT, mHEMT
46 W/ºC/mLow12.90.85m2/V/sGallium Arsenide (GaAs)
ApplicationActive Device Technology
Thermal Conductivity
RF Lossεr
Electron Mobility
MMIC Semiconductors
FET & Bipolar Device Structures
µ
(Not to scale)
Typical FET Structure Typical HBT Structure
Typical Fabrication Steps of GaAs MESFET Process
µ
µ )
µ
µ
Wafer & MMIC Examples
6” GaAs wafer
Ku-Band PA MMIC
Output Matching
MMIC Component Snapshots
Single FET MMIC Components
MMIC Recommended Processes
GaAs HBT1 -100GHzVCOSiGe BiCMOS1 – 50GHzLow Power Mixed SignalpHEMT20–100GHzMesfet0.1 – 20GHzSwitches for digital attenuators
and phase shifters
GaN10 – 30GHz
GaAs Mesfet, GaN, SiC1 - 10GHzHigh Power (> 100W)
pHEMT10 –100GHz
GaAs HBT, GaAs Mesfet1 -10GHzMedium Power (< 10W)
InP> 100GHz
GaAs pHEMT10 –100Ghz
GaAs Mesfet1-10GHzLow Noise AmplifiersDevice ProcessFrequencyApplication
List of MMIC Foundries Worldwide
Only offers foundry services0.15µm, 0.5µm pHEMT and 1µm ,2µm HBT6” GaAsTao Yuan Shien,
TaiwanWIN Semiconductor
Offers foundry services &has a product line
0.15µm, 0.25µm pHEMT and 2µmHBT 4” GaAsUlm, Germany
Orsay, FranceUnited MonolithicSemiconductor
Offers foundry services &has a product line
0.15µm MHEMT,0.13,0.25, 0.35,0.5µm pHEMT,0.5µm & 0.6µmMesfet, 0.5µm, HFET,3µm InGaPHBT
6” GaAs &GaN
Portland, OR& Dallas, TX,USA
TriquintSemiconductor
Offers foundry services &has a product line
0.25µm & 0.5µm PHEMT, HFET &MESFET6” GaAsTainan, TaiwanTranscom
Offers foundry services &has a product lineSiGe BiCMOSSiGeOttawa, Ontario,
CanadaSiGe Semiconductor
Offers new foundry services& has a product lineGaN HEMTGaN on 4“
SiliconRaleigh, NC,USA
Nitronex
Offers foundry services &has a product line
0.18µm ,0.5µm & 1µmpHEMT,0.5µm & 1µm Mesfet, MSAG4” GaAs
Lowell, MA &Roanoke, VA,USA
M/A COM
Offers foundry services &has a product lineInGaP HBT6” GaAsIksan, S. KoreaKnowledge ON
Only offers foundry services0.18µm,0.25µm,0.35µm,0.5µm SiGeBiCMOS & 0.13µm, 0.18µm,0.25µmRFCMOS
SiliconBurlington, VT,USAIBM
Only offers foundry services0.5µm pHEMT, InGaP & InP HBT6” GaAsTorrance, CA,USAGCS
Offers foundry services &has a product line0.2µm pHEMT6” GaAsSanta Clara,
CA, USAFiltronics CompoundSemiconductors
Offers SiC foundry services& has a product lineGaN HEMT & SiC Mesfet3" SiC & GaNDurham, NC,
USACree
MarketProcesses offeredCapabilityLocationFoundry
Essential MMIC Assembly Equipment
Class 10,000 Clean Room Eutectic Die Attach
Automatic BonderDie Pick & Place
Packaging Examples: Carrier mounted
10W Module C-Band T/R Module
Low Cost Packaged MMICs & Devices
a) Ceramic Drop-in b) SMT Ceramic c) SMT Plastic
d) Finished Products
MMIC & Device Empty Packages
MMIC Development Steps
DeviceSelectionSpecifications Block
Diagram
Preliminary Analysis & Layout
Design of Wafer DC & RF Tests
PackageDesign orSelection
AreSpecifications
Met?
Yes
No
MMIC Test Fixture Design
AreSpecifications
Met?
GaAs WaferFabrication
DC & RFTesting
Yes
No
New IIteration
New Design Configuration
To Pre ProductionPhase
FinalAnalysis &Layout
• 6 to 12 months• Foundry Service: $50,000 - $120,000
MMIC Production Steps
Pre-ProductionSpecifications DC & RF
Testing
PreliminaryDataSheets
Life test Environmental Testing
AreSpecifications
Met?
Yes
No
To ProductionPhase
Final DataSheets
AreSpecifications
Met?Yes
No
Adjust Process
Tighten Process Parameters
DC & RF
all met
MMIC DESIGN GUIDELINES
• Device Characterization
• Device Scaling
• Circuit Design and Simulation
• Chip Yield
• Thermal Analysis
• MMIC testing
Device Characterization
• Device characterization accounts to 50% of design effort.
• Small signal testing include: S-parameters, NF …etc
• Large signal testing: DC data, I-V characteristics, power load-pull, efficiency, IMD & EVM
• Modeling should include all pads and transmission lines connected to test device
Device Scaling
• Invariant parameters are: voltage, gain, NF, efficiency (η), linearity, fmax & fT
• Scaled parameters such as: current, P1dB , Psat , Zin, Zout, Zopt are all proportional to device periphery
• Device dimensions should be less than 5% of wavelength (λ)
• Device building block such as gate length (Lg) and gate width (Wg) cannot be scaled and should remain invariant.
MMIC Design & Simulation
• Make it simple and use small number of matching elements
• Bode / Fano Theorem implies using resistive matching to achieve broadband matching
• Keep at least one substrate height between elements to avoid EM coupling
• Understand sources of simulation errors: EM coupling, non-standard library elements, layout inaccuracy, process variations, modeling errors
Bode / Fano Theorem
o 0
1ln .| ( ) | o
dR C
πωω
∞
≤Γ∫ min.| | exp( )
( )b a o oR Cπ
ω ωΓ = −
−
2-PortMatchingNetwork Co Ro
Γ(ω)
0
0.2
0.4
0.6
0.8
1
0 5 10 15 20Load Quality Factor (QL)
Min
imum
Ref
lect
ion
Mis
mat
ch
50% BW
20% BW
10% BW
Chip Yield
exp( )
exp( )
g g c c
m g g c cWafer CostWafer Area
Yield A D A D
Chip Cost A A D A D
= − −
= +
Ag is the total MMIC device gate or emitter area
Ac is the total MMIC capacitor area
Am is the MMIC chip area
Dg & Dc are critical defects per unit area
• Maximum MMIC area is 10 to 20mm2
• For very low cost the maximum area is usually < 2 to 3mm2
Thermal Analysis
• Maximum junction device temperature Tj < 175ºC
• High reliability applications < 120ºC
• Divide power stage device into small cells to spread the heat
• Take into account solder and package heat resistance when calculating Tj
On-Wafer Calibration Patterns FET for on-wafer characterization
Packaged MMIC TF
MMIC RF Testing
• S-parameters, power, IMD …etc
• On-wafer vs Test Fixture testing
• Calibration methods
RF Measurement Equipment
On-Wafer Probe Station
Vector Network Analyzer
Automated Power Test Bench
Power MMIC Survey
0
10
20
30
40
50
0.00 50.00 100.00 150.00 200.00Frequency (GHz)
Pow
er (d
Bm
)
GaAs FETGaNInPSiCGaAs HBTLDMOS
Pf2 = Constant Law
LNA MMIC Survey
0
2
4
6
8
10
0.00 50.00 100.00 150.00 200.00Frequency (GHz)
NF
(dB
)
ABCSGaAsGaNInPSiGe & CMOS
HIFET Voltage Waveforms
-1.5
-1
-0.5
0
0.5
1
1.5
0 1 2 3 4 5 6 7
Vin
3Vm
Vd = 4Vm
2Vm
Vm
C1
C2
C3
R2
R1
R1
R1
-1.5
-1
-0.5
0
0.5
1
1.5
0 1 2 3 4 5 6 7
-1.5
-1
-0.5
0
0.5
1
1.5
0 1 2 3 4 5 6 7
-1 .5
-1
-0 .5
0
0 .5
1
1 .5
0 1 2 3 4 5 6 7
Zopt
-1.5
-1
-0.5
0
0.5
1
1.5
0 1 2 3 4 5 6 7
4W 0.03 to 3GHz HiFET MMICBias 20V, 150mA, 400mA
-25
-20
-15
-10
-5
0
5
10
15
20
25
0 1 2 3 4 5Frequency (GHz)
Ret
urn
Loss
(dB
)
-50
-40
-30
-20
-10
0
10
20
30
40
50
Gai
n (d
B)Gain
S11
S22
Bias @ 20V/550mA
15
20
25
30
35
40
0 0.5 1 1.5 2 2.5 3Frequency (GHz)
P1d
B (d
Bm
)
0
10
20
30
40
50
Effi
cien
cy (%
)
P1dB
EfficiencyMMIC Photo Die Size 2.2x1.8mm
Power CMOS HiFET at 1GHz
640µm 4 in-Series HiFET at 1GHz & Bias 8V / 202mA
5
10
15
20
25
30
-15 -10 -5 0 5Pin (dBm)
Gai
n (d
B) &
Pou
t (dB
m)
0
10
20
30
40
50
Effic
ienc
y (%
)
Pout(dBm)GAIN(dB)EFF
Ropt= 40 Ω(2.5 Ω for 2560µm device)
MMICs for Wireless Applications
PAT/R SW
LNA IF AmpMixer
Modulator
MMIC PA for 802.11bRF Front End for ETC Applications
C-Band T/R Module for Phase Array
TX
RX
To BB
2 – 25GHz Millimeter-wave PA
DC – 40GHz SPDT Switch
44GHz 4-bit Phase Shifter MMIC
Conclusion and Future Trends
• GaAs MMICs dominate power, low noise and passive applications at microwave and will continue to do so in the near future
• Improvements in power levels & efficiency will continue to happen for pHEMT and HBT GaAs MMIC
• BiCMOS & SiGe MMIC is maturing for SOC and RF front end applications
• GaN MMIC are expected to mature in few years and may fulfill the need for 10W to 100W power levels up to mm-waves.
• SiC and LDMOS Silicon MMIC will continue to serve applications for >10W below 5GHz
• High power mm-wave MMICs will necessitate flip-chip designs• 3-D MMICs will mature for mm-waves and higher level of integration in
Silicon.