IMS-2010, Anaheim, CA, USA

To develop integrated, simple to use SMT packaged Customer friendly partsthat eliminates complex and expensive chip Assembly and relatedperformance degradation.

IMS-2010

Laminate Package

Chip Scale Package High performance at frequencies from DC-mmW

Eliminates one assembly step of die attach and wire bonding ascomplete package is processed with IC.

Virtually eliminates parasitic associated with plastic, lead framesand bond wires & provides true air cavity

Enables ultra-thin IC substrates to dissipate heat and wholepackage is thinner than current solutions so much better forthermal dissipation for PAs.

Finished GaAsCap wafer can be RF probed as accurately as ‘onwafer’ probing and so suitable for large scale manufacturing testand does not need any PCB or custom test fixture/contactor boardfor testing.

Estimated cost is $0.10/mm2) even at mmW frequencies.

Built to specifications, Uses Rogers 4350 material for base and lid

IMS-2010

x2

+2

0 d

Bm

x2

4*LO=-35dBm

RF=-17dBm

NF=12dBm

IP3=+4dBm

4*LO=-25dBm

RF=-7dBm

NF=17dBm

IP3=+14dBm

4*LO=-30dBm

RF=-12dBm

NF=17.8dBm

IP3=+8.5dBm

4*LO=-20dBm

RF=-2dBm

NF=17.9dBm

IP3=+18dBm

4*LO=-25dBm

RF=-7dBm

NF=18dBm

IP3=+12dBm

4*LO=-15dBm

RF=+5dBm

NF=18dBm

IP3=+18.5dBm

4*LO=+7dBm

RF=+25dBm

NF=18dBm

IP3=+35dBm

-6 t

o 0

dB

m

IF=-5dBm

4*LO@RF

-35dBm

7-1

2G

Hz

37

-44

GH

z

Transmitter SpecificationParameter Unit Specification

RF Frequency GHz 37-44

LO Frequency GHz 7.5-11.5

LO Power dBm ≤ 0

IF Frequency GHz DC-3.0

Conversion Gain dB 30

Gain Dynamic Range dB 15(min.) [>30 desired]

C/I3 dBc <29

NF dB <18 & 27 (Min./Max. Gain)

Side Band Rejection dB >15

4*LO-RF Leakage dBc <-15

IMS-2010

IF1

IF2

Balun

Balun

RF

LO

Parameter Unit Spec.

LO Frequency GHz 17-23

IF Frequency GHz DC-5

Conversion Gain dB 10

Gain Dynamic Range

dB 24

NF dBm 17/23

Input IP3 dBm +7/+16

LO Power dBm 20

2*LO Leakage dBc 10

S.B. Suppression dBc 15

RL dB 10

Current (5V) mA 300

Die

siz

e: 2

.65x3x0.1

mm

IMS-2010

IMS-2010

-22

-18

-14

-10

-6

-2

2

6

10

14

18

40.5 41 41.5 42 42.5 43 43.5

Co

nve

rsio

n G

ain

(d

B)

RF Frequency (GHz)

Max. G.

Min. G.

0

2

4

6

8

10

12

14

16

18

20

22

24

40.5 41 41.5 42 42.5 43 43.5

IIP

3 (

dB

)

RF Frequency (GHz)

Max. G.

Min. G.

-20

-15

-10

-5

0

5

10

15

20

25

30

35

40

24.5 26.5 28.5 30.5 32.5 34.5 36.5 38.5 40.5 42.5 44.5

C.G

.(d

B),

OIP

3 (

dB

m)

& S

SB S

up

p.

(dB

c)

RF Frequency (GHz)

C.G.

OIP3

SSB Supp.

-40

-35

-30

-25

-20

-15

-10

-5

0

40.5 41.0 41.5 42.0 42.5 43.0 43.5

Po

we

r @

RF-

Po

rt (

dB

m)

RF Frequency (GHz)

RFout

2*LO@RF-Port

IMS-2010

Design Parameters

Specifications: Measured

Must Want

BW (GHz) 37.5 – 43.5 37 - 45 37 -44

Gain (dB) 20 22 20.5

P-1dB (dBm) 29 30 29

OIP3 [dBm] @ 12(dBm) SCL

35 37 35

RLin (dB) 8 10 7

RLout (dB) 8 10 8

DC Power 5V, 0.8A 5V, 0.8A 5V, 0.7A

ESD 50V MM, 250HBM 50V MM, 250HBM

Block Diagram

Die size: 2.65x2x0.1mmIMS-2010

0

5

10

15

20

25

30

35

37 38 39 40 41 42 43 44

Frequency [GHz]

Gain

, P

-1, P

-3, an

d P

AE

Gain [dB] P1[dBm] PAE @P-1

P-3[dBm] PAE @P-3

0

5

10

15

20

25

30

35

40

45

37 38 39 40 41 42 43 44

Frequency [GHz]

OIP

3[d

Bm

]

-55

-50

-45

-40

-35

-30

-25

-20

-15

-10

IM3

Le

ve

l [d

Bc

]

OIP3_L OIP3_H

IM3L(dBc) IM3H(dBc)

Frequency : 38 – 44 GHz

Gain : 20.5dB +/- 2 dB

Output Power @P-1 : 29 dBm

Psat (-3dB) : 29.5 dBm

OIP3 @Po=12dBm SCL : 35 dBm

RL(in) : -7 dB

RL(out) : -8 dB

Bias Supply : 5V, 700mA

Chip Size (mm) : 2.65 x 2 x 0.1

Measured IMD3 @ Po=+12dBm SCLMeasured Gain, S11, and S22

Measured P1, gain, and PAE

IMS-2010

Power Amplifier Base (°c) ICmax (°c) Vd Id (mA) P(watts) Δ (°c) θjc

S/N #4 20 57.3 5 700 3.5 37.3 10.7

Thermal Resistance

10.7 Deg C / W

VDD

RF 90-deg

Hybrid

In-

phase

Divider

IF

90-deg

HybridIF1

IF2

External

Diplexer

Diplexer

LNA Sub-Harmonic

IRM

LO

Parameter Unit Spec.

RF Frequency GHz 37.5-43.5

LO Frequency GHz 17-23

IF Frequency GHz DC-5

Conversion Gain dB 14

Input IP3 dBm -6

LO Power dBm 15

Noise Figure dBm 4.8

Return Loss dB -10

Image Rejection dB 15

Current (3V) mA 95

Die size: 2.65x2x0.1mm

IMS-2010

2

4

6

8

38 39 40 41 42 43 44

Frequency (GHz)

No

ise F

igu

re (

dB

)

Vlna=3V

Vlna=3.5V

Vlna=4V

0

5

10

15

20

40 40.5 41 41.5 42 42.5 43 43.5

Frequency (GHz)

Co

nvers

ion

Gain

(d

B)

Vlna=3.5V

Vlna=4V

Vlna=3V

-15

-10

-5

0

5

40 40.5 41 41.5 42 42.5 43 43.5

Frequency (GHz)

IIP

3 (

dB

m)

Vdd=3V

Vdd=3.5V

Vdd=4V

0

5

10

15

20

25

37 38 39 40 41 42 43 44

Frequency (GHz)

IRR

(d

B)

Vlna=3V

Vlna=4V

IMS-2010

F1

F2

Amp

Diff. Active Balun

Amp

LO/4 LO/2

Fin=10.5GHz

-10

-5

0

5

10

15

20

25

-8.0 -7.0 -6.0 -5.0 -4.0 -3.0 -2.0 -1.0 0.0 1.0 2.0 3.0 4.0

Input Power (dBm)

Po

ut

[1H

, 2

H, 3

H, 4

H]

(dB

m)

1H2H3H4H

Fin=11.5 GHz

-10

-5

0

5

10

15

20

25

-8.0 -7.0 -6.0 -5.0 -4.0 -3.0 -2.0 -1.0 0.0 1.0 2.0 3.0 4.0

Input Power (dBm)

Po

ut

[1H

, 2

H, 3

H, 4

H]

(dB

m)

1H2H3H4H

IMS-2010

-0.9

-0.8

-0.7

-0.6

-0.5

-0.4

-0.3

-0.2

-0.1

0

25 30 35 40

Frequency (GHz)

S2

1 (

dB

)

1.0mm x 0.5mm x 0.1mm

IMS-2010

Parameter Unit x2Up-

ConverterPower Amp

Detector Down Converter

Pout (2H) dBm +21 n/a n/a n/a n/a

Gain dB n/a 11 20 -0.75 15

Gain control dB n/a 24 n/a n/a n/a

LO Power dBm n/a +20 n/a n/a +15

2x LO Leakage dBc n/a 15 n/a n/a n/a

Return Loss dB n/a -10 -10 -15 -10

OIP3 dBm n/a +22 +38 +50 +10

P-1dB dBm n/a +15 +30 +40 +5

Image Rejection dB n/a 15 n/a n/a `5

Fundamental Supp. dBc 20 n/a n/a n/a n/a

3rd Harmonic Supp. dBc 20 n/a n/a n/a n/a

4th Harmonic Supp. dBc 20 n/a n/a n/a n/a

Voltage V 5 5 5 1.8 3

Current mA 210 300 700 1 70

IMS-2010