Latest Results from the SEMATECH Berkeley Actinic Inspection Tool

Kenneth A. Goldberga, Iacopo Mochia, David Chanb, Hyuk Joo Kwonb

aLawrence Berkeley National Laboratory bSEMATECH

Beyond the AIT: the SHARP microscope

2010 – 2011

AIT upgrades

New experimental results

KAGoldberg@lbl.gov, EIPBN 2010

Goldberg, SPIE 7122, (2008)

λ: 13.2–13.6 nm

NA (4x): 0.25–0.35, 6°

Mag: ~900x

The SEMATECH Berkeley Actinic Inspection Tool (AIT)

Pre-2011 zoneplate array with Si3N4 membrane

0.35 1000x

0.35 907x

0.30 907x

0.25 907x

0.25 NA 680x mag

Au absorber

Si3N4

visible-light microscope image

2011: Improved AIT zoneplate array

SEM Micrograph

open windows

20-µm support

0.25 907x

0.25 907x

0.32 907x

0.35 NA 907x mag

200 μm

Au absorber

0.35 907x

alignment

Mask images improve the reticle navigation

SEMATECH Berkeley Actinic Inspection Tool (AIT) • February 2011

Mask Performance Evaluation

Mask: MET10 / Wallow, et al., unpublished 2011

500 nm

28 nm

32 nm

22 nm

24 nm

ThroughFocus© Software N

ILS

focus

CD

[n

m]

Inte

nsi

ty

detail

Defect Repair Studies

500 nm

Mask: J7M29005NA Gallagher, Lawliss, unpublished 2011

16-09 / G4 / Site 8 / Site Loc 17

Defect Repair Studies

500 nm

Mask: J7M29005NA Gallagher, Lawliss, unpublished 2011

16-09 / G4 / Site 3 / Site Loc 11

Defect Repair Studies

500 nm

Mask: J7M29005NA Gallagher, Lawliss, unpublished 2011

16-09 / G4 / Site 7 / Site Loc 12

Defect Repair Studies

500 nm

Mask: J7M29005NA Gallagher, Lawliss, unpublished 2011

16-09 / G4 / Site 2 / Site Loc 6

Mask: SMOCOL2 / Gallagher, Badger, unpublished 2011 Defect A3-B30

500 nm SEM AIT (EUV)

Programmed Pattern Defects

500 nm

Native Defect Studies

Focu

s

500 nm

Native Defect Studies

Focu

s

500 nm

Native Defect Studies

Focu

s

500 nm

Native Defect Studies

Focu

s

500 nm

Native Defect Studies

Focu

s

500 nm

Native Defect Studies

Focu

s

500 nm

Native Defect Studies

Focu

s

500 nm

Native Defect Studies

Focu

s

500 nm

Native Defect Studies

Focu

s

500 nm

Native Defect Studies

Focu

s

Phase Defect Studies

• bump • pit

Mask: AGC1008005 Kwon, et al., unpublished 2011

through focus series… – + Δ = 50 nm

Phase Defect Studies

Mask: AGC1008005 Kwon, et al., unpublished 2011

through focus series…

• bump • pit

– + Δ = 50 nm

Phase Defect Studies

Mask: AGC1008005 Kwon, et al., unpublished 2011

through focus series…

• bump • pit

– + Δ = 50 nm

Phase Defect Studies

Mask: AGC1008005 Kwon, et al., unpublished 2011

through focus series…

• bump • pit

– + Δ = 50 nm

Phase Defect Studies

Mask: AGC1008005 Kwon, et al., unpublished 2011

through focus series…

• bump • pit

– + Δ = 50 nm

Phase Defect Studies

Mask: AGC1008005 Kwon, et al., unpublished 2011

through focus series…

• bump • pit

– + Δ = 50 nm

Phase Defect Studies

Mask: AGC1008005 Kwon, et al., unpublished 2011

through focus series…

• bump • pit

– + Δ = 50 nm

Phase Defect Studies

Mask: AGC1008005 Kwon, et al., unpublished 2011

through focus series…

• bump • pit

– + Δ = 50 nm

Phase Defect Studies

Mask: AGC1008005 Kwon, et al., unpublished 2011

through focus series…

• bump • pit

– + Δ = 50 nm

TEM AIT

50 nm

Focu

s

1.5 μm

PIT

PIT

1.5 μm 50 nm

TEM AIT

Focu

s

BUMP

1.5 μm

TEM

50 nm

AIT

Focu

s

Mask: APSM Yan, et al., SPIE 2011

Phase layer Substrate

Patterned phase layer

Side view

Mask top view

Thicker

Substrate

Phase Structure Studies

Mask: APSM Yan, et al., unpublished 2011

Phase Structure Studies

The AIT

The AIT is over 6 years old.

That’s 65 in litho years. Photo: Stefan Tell

14+ years of actinic mask inspection/imaging

Exitech U. Bielefeld MIRAI II/Selete MIRAI Fraunhofer Institute

Review: Goldberg, JVST B 28 (6), C6E1-10 (2010)

2014 Zeiss INVENT/CNSE Colorado State U. Hyogo Hanyang SEMATECH/LBNL

Lucent EUV LLC/LBNL NTT U. Hyogo SEMATECH/LBNL

SEMATECH/ LBNL 2012

♯

♯

SHARP concept drawing

At σ ≈ 0.2, AIT sees ≥ 16 nm dense lines

50%

4×NA:

Calculations: K. Goldberg

At σ = 0.8, SHARP will see > 6 nm

4×NA:

dense lines

50%

Calculations: K. Goldberg

Synchrotron Source • bending magnet • variable bandwidth, λ/Δλ • narrow divergence angles

Coherence control

Uniformity control

Variable NA, Incidence angle,

and Azimuth angle

3 fewer mirrors than AIT

Fourier-Synthesis Illuminator

condenser

mask

pupil

angle-scanner

angle-scanner

Fourier-Synthesis Illuminator

condenser

mask

pupil

Fourier-Synthesis Illuminator

mask

pupil

angle-scanner

~25 µm

10:1 demag ellipsoidal condenser 6–10° σ ≤ 0.9

Fourier-Synthesis Illuminator

condenser

mask

pupil

angle-scanner

coherence control

condenser

mask

pupil

angle-scanner

Fourier-Synthesis Illuminator

coherence control

condenser

mask

pupil

angle-scanner

Fourier-Synthesis Illuminator

coherence control

condenser

angle-scanner

mask

pupil

Fourier-Synthesis Illuminator

coherence control

condenser

angle-scanner

mask

pupil

Fourier-Synthesis Illuminator

adjustable azimuth ±25°

condenser

angle-scanner

mask

pupil

Fourier-Synthesis Illuminator

condenser

angle-scanner

mask

pupil

Fourier-Synthesis Illuminator

adjustable azimuth ±25°

adjustable azimuth ±25°

condenser

angle-scanner

mask

pupil

Fourier-Synthesis Illuminator

condenser

angle-scanner

mask adjustable azimuth ±25°

pupil

Fourier-Synthesis Illuminator

mask

CCD

pupil-fill monitor

visible-light microscope

zoneplates

Imaging System

mag = 250–1800× (up to ~8000×)

1st

0th

AIT > 16 nm

low σ

6° fixed

SHARP > 6 nm σ ≤ 0.9

6–10°

The AIT team

Iacopo Mochi James Macdougall Nathan Smith Seno Rekawa Ken Goldberg Project Scientist Graduate Student Engineering Associate Chief Engineer Principal Investigator

This work was supported by SEMATECH, through the U.S. Department of Energy under

Contract No. DE-AC02-05CH11231.

Harry Kwon David Chan Bryan Rice Stefan Wurm Project Manager Mask Strategy Sr. Director of Director of for AIT SHARP Leader Strategic Initiatives Lithography