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1 Advantage of the LED (OSRAM)

LED Reference

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LED Reference

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Page 1: LED Reference

1

Advantage of the LED

(OSRAM)

Page 2: LED Reference

2

LED Cross-Section View

Substrat (absorbierend

oder transparent)

~ 0.25 mm

內部量子效率

+

引出效率

p- Window Layer

p- Cladding Layer

n- Cladding Layer

n- Substrate

i- Active Layer

Page 3: LED Reference

3

電流驅動發光原理

Page 4: LED Reference

4

Different Kinds of Electric Transition

E2

E1

E2

E1

hν 12

E2

E1

hν 12

E2

E1 hν 12

hν 12

(Before) (After)

(a) Absorption

(b) Spontaneous Emission

(c) Stimulated Emission

(Photodetector)

(LED)

(Laser Diode)

E2

E1

hν 12

E2

E1

Eg (Bandgap)

Page 5: LED Reference

5

LED發光光譜及其採用材料

Blue B = Blue (InGaN) 470nm

B = Blue (GaN) 466nm

Green

V = Verde-Green (InGaN) 505nm

T = True Green (InGaN) 525nm

P = Pure Green (GaP) 560nm

G = Green (GaP:N) 570nm

White

W = White (GaN) (x=0.32/y=0.31)

W = White (InGaN) (x=0.32/y=0.31)

Yellow Y = Yellow (AlGaInP) 587nm

Orange O = Orange (AlGaInP) 605nm

Amber A = Amber (AlGaInP) 615nm

Red S = Super-Red (AlGaInP) 630nm

H = Hyper-Red (AlGaAs) 645nm

s

0

0.1

0.2

0.3

0.4

0.,5

0.6

0.7

0.8

0.9

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

blue

green

red

yellow

white

Colour triangle

(OSRAM)

Page 6: LED Reference

6

AlGaInP及InGaN LED

540 560 580 600 620 640 660

Emission Wavelength [nm]

20

50

1000

200

AlGaInP

Traditional

20 mA

Lum

inou

s Flu

x @

20m

A

Orange Yellow Superred Hyperred

AlGaAs

GaP GaAsP

Lum

inou

s Flu

x @

20m

A

20

50

100

520 500 480 460

Green Verde Blue

InGaN

on SiC on Sapphire

on GaAs

1000

200

500

100

500

(OSRAM)

Page 7: LED Reference

7

單晶磊晶層的成長(AlGaInP)

(E. F. Schubert, “Light-Emitting Diode”)

Page 8: LED Reference

8

單晶磊晶層的成長(AlGaInN)

Lattice Constant a0 (Å)

Ban

dgap

Ene

rgy

Eg (

eV)

Page 9: LED Reference

9

有機金屬氣相磊晶(MOVPE)設備

(AXITRON)

Page 10: LED Reference

10

The Planetary Reactor

wafer handler

4” wafer on rotating satellite

main susceptor disk

collector ring (molybdenum)

(AXITRON)

Page 11: LED Reference

11

質流控制器(MFC)

(M. Quirk and J. Serda, “Semiconductor Manufacturing Technology”)

Page 12: LED Reference

12

LED Chips or Dies

Page 13: LED Reference

13

LED Measurement (Probe Station)

Page 14: LED Reference

14

LED發光特性的改善

磊晶製程

LED-Epitaxy

晶粒製程

LED-Process

封裝製程

LED-Package

Page 15: LED Reference

15

Current Spreading Layer

(a) 2 µm (b) 15 µm (c) 50 µm

125

Top Contact

P-GaP Current Spreading Window 1.0

0.5

(a)

(b)

(c)

0 0 25 50 75 100

Distance from Center of Chip, x(µm)

Nor

mal

ized

Cur

rent

Den

sity

, J(x

) p-Contact

n-Contact

2-50 µm p-GaP Window Layer

1.0 µm AlInP Si-doped

n-GaAs Substrate

0.5-1 µm AlInP Mg-doped 0.5-1 µm AlGaInP Undoped

Page 16: LED Reference

16

Current Spreading Layer

Without a spreading layer

With a spreading layer

(E. F. Schubert, “Light-Emitting Diode”)

Page 17: LED Reference

17

Wafer Bonding

p-Contact

n-Contact

p-GaP Window (~50µm)

Wafer Bonded n-GaP (~200 µm)

AlGaInP (~2 µm)

GaP Epilayer LED Structure

GaAs Substrate

GaP Epilayer LED Structure

GaP Epilayer LED Structure

GaP Substrate GaAs Substrate

GaP Epilayer LED Structure

GaP Substrate

(Temperature and Force)

(LumiLEDs)

Page 18: LED Reference

18

Extraction Efficiency

(E. F. Schubert, “Light-Emitting Diode”)

Page 19: LED Reference

19

Surface Roughening

Before etching

After etching

(Fujii et al., APL, v84, p855, 2004)

Page 20: LED Reference

20

AlInGaP Chip Efficiency Improvement

~ 30x (LumiLEDs) ~ 18x ~ 3x

Batwing

Page 21: LED Reference

21

Effect of Epoxy

( )airη ( )epoxyη

(E. F. Schubert, “Light-Emitting Diode”)

Page 22: LED Reference

22

Different Kinds of LED Packages

(http://en.wikipedia.org/wiki/LED)

(LED Lamps) (LED Displays)

(SMT LEDs) (PCB LEDs) (SunLED)

Page 23: LED Reference

23

銲線(Ball Bond)

銲線完成照片 (CREE)

Page 24: LED Reference

24

Flip-Chip InGaN LED

(LumiLEDs)

(Nichia)

N-GaN

Sapphire

Buffer layer

P-GaN MQW

P-Contact

N-Contact

Transparent contact layer

N-GaN

Sapphire

Buffer layer

P-GaN MQW

P-Metal

N-Metal

Submount

Solder

Conventional InGaN LED

Flip-Chip InGaN LED

Page 25: LED Reference

25

Packaging Technology (Power Improvement)

(Low Power LED) (High Power LED)

(LumiLEDs)

Page 26: LED Reference

26

RGB LEDs (2)

Diffusion cap

Page 27: LED Reference

27

Blue LED + Yellow Phosphor (1)

演色性評價指數: ~ 80 色溫: 5000 K.. 6500 K

藍光Blue LED + 螢光粉phosphor = 白光white LED

(OSRAM)

Page 28: LED Reference

28

Blue LED + Yellow Phosphor (2)

Page 29: LED Reference

29

Street and Roadway

(LumiLEDs)

Page 30: LED Reference

30

Product Design (LED Curing System)

(Innovation in Optics)

Heat Sink

Page 31: LED Reference

31

Traffic Signals

150W 15W (LumiLeds high power LED *12)

Sun Phantom

Prevention

Page 32: LED Reference

32

Media Boards

Times Square, New York

~ 1000 m2 LEDs = 19 mil. LEDs

(Thomas Swan)

Page 33: LED Reference

33

Road Lighting

Very bright and can be seen from up to 4 miles away

(Sweden)

Page 34: LED Reference

34

Elevated Taxiway LED

(Dialight)

Page 35: LED Reference

35

LED Automotive Lighting

Mercedes Benz 128 LEDs in two different colors

18 in each mirror (Amber) 32 in every stop light

28 high mount stop light

Lexus Interior Lighting Ford Tonka F-350 500 lm*2 for low-beam operation with side parking lights

Page 36: LED Reference

36

Forward Lighting

(LumiLEDs)

Page 37: LED Reference

37

Flashlights and Lighting for Diving

(Fa&Mi)

Page 38: LED Reference

38

Backlighting Source

For all types of displays: LCD Televisions, LCD monitors on laptop computers, and various custom sized LCD displays.

(LumiLEDs)

Page 39: LED Reference

39

Wide Area Lighting

(LumiLEDs)

Page 40: LED Reference

40

Residential Lighting Application

(LumiLEDs)

Page 41: LED Reference

41

Capsule Endoscopy