Ultra-Deep submicron technologyEtienne SicardInsa

etienne.sicard@insa-tlse.frhttp://intrage.insa-tlse.fr/~etienne

E. Sicard - ultra deep submicron

Ultra-deep submicron technology Specific features Embedded Memory Magnetic RAM SOI conclusion Summary

E. Sicard - ultra deep submicron

83868992959801040.18028680386486pentiumpentium II1.00.20.32.00.05YearPentium IV0.031. Ultra-deep submicron technologyItanium07MicronSub-micronDeep-submicronUltraDeep-submicronNano

E. Sicard - ultra deep submicron

1. Ultra-deep submicron technologyMultiple technological options to optimize performanceFaster & bigger chipsAgreements to handle tremendous costs (ST,Philips,Motorola,TSMC)

E. Sicard - ultra deep submicron

2. Specific featuresImproved tretch isolationMultiple MOS optionsMultiple metal layersStacked viasLow K dielectric to reduce couplingsCopper to speed up signal transport High K dielectric to reduce leakage

E. Sicard - ultra deep submicron

2. Specific features3-6 MOS optionsHigh Speed: normal MOSVery high speed: critical pathLow leakage: for low powerHigh voltage: for I/OsDouble-gate: for embedded EEPROMRF : optimized for GHz amplifiers

E. Sicard - ultra deep submicron

High VoltageLow LeakageHigh SpeedUltra High SpeedEEPromApplication-oriented MOS deviceSame basic mechanism

New physical properties in EEPROM and MRam2. Specific features

E. Sicard - ultra deep submicron

2.5V1.2VHigh SpeedHigh Voltage1.2VLow leakage1.2V1.2V2.5V1.2V2. Specific features1.8V2.5VExample in 0.12m technology

E. Sicard - ultra deep submicron

2. Specific featuresOption layerOption layer propertiesSimple access to low leakage, high voltage and isolated Pwell

E. Sicard - ultra deep submicron

2. Specific features

Low leakage High speed High voltage Simulation of the 3 MOS options

E. Sicard - ultra deep submicron

2. Specific featuresHigh speedLow leakageSmall Ion reductionLow leakage MOS has higher Vt, slight Ion reductionLow leakage MOS has 1/100 Ioff of high speed MOSIoff ~10nAIoff ~100pA

E. Sicard - ultra deep submicron

2. Specific features0.1m process (TSMC+ST+IBM+)Each MOS is optimized for a target customer applicationTowards a world-wide standard process which will ease design

E. Sicard - ultra deep submicron

Type of MOS

Effective channel length (m)

Oxide thickness

Ioff

Ion

Ultra-high speed

0.07

16

Very high

Very high

High speed

0.09

16

High

High

Low leakage

0.09

24

Low

Medium

High voltage

0.2

50

Low

Low

Cmos Embedded memories80% of a system-on-chipBottleneck for bandwidth3. Embedded Memory

E. Sicard - ultra deep submicron

Parasitic capacitance: 2fFSpecific capacitance: 3-30fF3. Embedded Memory

E. Sicard - ultra deep submicron

3. Embedded Memory2nd PolyFloating PolyUsed in EPROM, EEPROM and Flash memoriesDouble-Gate MOS

E. Sicard - ultra deep submicron

3. Embedded MemoryDouble-Gate MOS

E. Sicard - ultra deep submicron

12V3. Embedded MemoryDouble-Gate MOS: write/erase by tunneling0V

0VddAccelerateHot electron Tunneling12VColdelectron TunnelingwriteeraseDense but slow

E. Sicard - ultra deep submicron

4. Magnetic RAMDense, fast, non-volatile: universal memory2 stage magnetic statesSilicium, Cobalt et NikelA high magnetic field changes the state of the material equal toI=5mA

E. Sicard - ultra deep submicron

Principles: Write: i/2 on the line, i/2 on the column gives a current high enough to change the stateRead: i/4 on the line, i/4 on the column and monitor the attenuation of current due to magnetic stateLineColumni/2i/2i/4WriteReadi/2i/2Erasei/44. Magnetic RAM

E. Sicard - ultra deep submicron

The next major evolution?Less capacitanceLess distance between nMOS and pMOSLess leakageCMOS compatible>50% faster circuits5. Silicon-On-insulator

E. Sicard - ultra deep submicron

6. ConclusionThe ultra-deep submicron technologies introduce new featuresLow leakage MOS targeted for low powerHigh voltage MOS introduced for I/O interfacingDouble-poly MOS for EPROM/Flash memoriesEmbedded memory are key components for System-on-chipMagnetic RAM to become the universal memorySOI has many promising features, some design issues pending

E. Sicard - ultra deep submicron