Mosfet Depletion - Simulasi Dengan PSpice

A. A. Mannan

Simulasi Depletion MOSFETs Scheme

Dengan menggunakan dasar rangkaian sebagai berikut:

Dengan menggunakan program PSpice, listing spice (dengan bantuan software Microwind) adalah

sebagai berikut:

CIRCUIT D:\My Documents\Arif\Other\Program & Roket\enhancement.MSK

*

* IC Technology: CMOS 90nm - 6 Metal

*

VDD 1 0 DC 1.20

V8_Vdd 8 0 DC 0.01V

Vsinus1 9 0 PULSE(0.00 1.20 0.09N 100.00N 0.01N 0.09N 100.19N)

*

* List of nodes

* "N3" corresponds to n°3



* "s1" corresponds to n°7

* "sinus1" corresponds to n°9

*

* MOS devices

MN1 7 9 3 0 N2 W= 25U L= 5U

MN2 0 5 5 0 N1 W= 50U L= 5U

MN3 5 3 2 0 N1 W= 50U L= 5U

MN4 0 5 7 0 N1 W= 50U L= 5U

MN5 0 8 4 0 N2 W= 25U L= 5U

MP1 3 4 2 0 P1 W= 10U L= 5U

MP2 4 4 2 0 P1 W= 10U L= 5U

*

C2 2 0 0.562fF

C3 3 0 0.310fF

C4 4 0 0.443fF

C5 5 0 0.467fF

C7 7 0 0.213fF

C8 8 0 0.066fF

C9 9 0 0.107fF

*

* n-MOS Model 3 :

* low leakage

.MODEL N1 NMOS LEVEL=3 VTO=0.40 UO=600.000 TOX= 2.0E-9

+LD =0.000U THETA=0.500 GAMMA=0.400

+PHI=0.200 KAPPA=0.060 VMAX=120.00K

+CGSO=100.0p CGDO=100.0p

+CGBO= 60.0p CJSW=240.0p

*

* n-MOS Model 3 :

* low leakage

.MODEL N2 NMOS LEVEL=3 VTO=-0.40 UO=600.000 TOX= 2.0E-9

+LD =0.000U THETA=0.500 GAMMA=0.400

+PHI=0.200 KAPPA=0.060 VMAX=120.00K



*

* p-MOS Model 3:

* low leakage

.MODEL P1 PMOS LEVEL=3 VTO=-0.45 UO=200.000 TOX= 2.0E-9

+LD =0.000U THETA=0.300 GAMMA=0.400

+PHI=0.200 KAPPA=0.060 VMAX=110.00K



*

* Transient analysis

*

.TEMP 27.0

.TRAN 0.1N 100.00N

* (Pspice)

.PROBE

.END

Hasil simulasi adalah sebagai berikut:

Terlihat bahwa hasil keluaran atau V(7) sudah mengikuti tegangan masukan V(9) tetapi nilai penguatan

tidak tepat. Hal ini dikarenakan parameter-parameter mosfet tidak dimasukkan atau menggunakan

parameter yang di generate otomatis oleh Microwind sendiri.

Dengan menggunakan PSpice Schematic, dilakukan uji pada rangkaian yang sama

Listing program adalah sebagai berikut (hasil konversi dari PSpice Schematic)

**** 05/28/12 20:07:52 *********** Evaluation PSpice (Nov 1999) **************

* D:\My Documents\Arif\kuliah S2\Material solid state\Schematic1.sch

**** CIRCUIT DESCRIPTION

******************************************************************************

* Schematics Version 9.1 - Web Update 1

* Mon May 28 20:07:52 2012

** Analysis setup **

.tran 0ns 100ms

.OP

.LIB "D:\My Documents\Arif\kuliah S2\Material solid state\Schematic1.lib"

* From [PSPICE NETLIST] section of pspiceev.ini:

.lib "nom.lib"

.INC "Schematic1.net"

**** INCLUDING Schematic1.net ****

* Schematics Netlist *

M_M2 out $N_0001 0 0 MbreakN

+ L=5u

+ W=50u

M_M6 $N_0001 $N_0001 0 0 MbreakN

+ L=5u

+ W=50u

M_M7 vdd $N_0002 $N_0001 $N_0001 MbreakN

+ L=5u

+ W=50u

M_M5 vdd $N_0003 $N_0003 $N_0003 MbreakP

+ L=5u

+ W=10u

M_M4 vdd $N_0003 $N_0002 $N_0002 MbreakP

+ L=5u

+ W=10u

R_R1 0 out 10k

M_M3 $N_0003 0 0 0 MbreakND

+ L=5u

+ W=25u

M_M1 $N_0002 in out out MbreakND-X

+ L=5u

+ W=25u

V_V5 in 0 AC 0.5V

+SIN 1V 1 50 0 0 0

V_V4 vdd 0 3V

**** RESUMING Schematic1.cir ****

.INC "Schematic1.als"

**** INCLUDING Schematic1.als ****

* Schematics Aliases *

.ALIASES

M_M2 M2(d=out g=$N_0001 s=0 s=0 )

M_M6 M6(d=$N_0001 g=$N_0001 s=0 s=0 )

M_M7 M7(d=vdd g=$N_0002 s=$N_0001 s=$N_0001 )

M_M5 M5(d=vdd g=$N_0003 s=$N_0003 s=$N_0003 )

M_M4 M4(d=vdd g=$N_0003 s=$N_0002 s=$N_0002 )

R_R1 R1(1=0 2=out )

M_M3 M3(d=$N_0003 g=0 s=0 s=0 )

M_M1 M1(d=$N_0002 g=in s=out s=out )

V_V5 V5(+=in -=0 )

V_V4 V4(+=vdd -=0 )

_ _(vss=0)

_ _(out=out)

_ _(vdd=vdd)

_ _(in=in)

.ENDALIASES

**** RESUMING Schematic1.cir ****

.probe

.END



**** MOSFET MODEL PARAMETERS

******************************************************************************

MbreakND-X MbreakN MbreakP MbreakND

NMOS NMOS PMOS NMOS

LEVEL 1 1 1 1

L 100.000000E-06 100.000000E-06 100.000000E-06 100.000000E-06

W 100.000000E-06 100.000000E-06 100.000000E-06 100.000000E-06

VTO -4 0 0 -4

KP 20.000000E-06 20.000000E-06 20.000000E-06 20.000000E-06

GAMMA 0 0 0 0

PHI .6 .6 .6 .6

LAMBDA 0 0 0 0

IS 10.000000E-15 10.000000E-15 10.000000E-15 10.000000E-15

JS 0 0 0 0

PB .8 .8 .8 .8

PBSW .8 .8 .8 .8

CJ 0 0 0 0

CJSW 0 0 0 0

CGSO 0 0 0 0

CGDO 0 0 0 0

CGBO 0 0 0 0

TOX 0 0 0 0

XJ 0 0 0 0

UCRIT 10.000000E+03 10.000000E+03 10.000000E+03 10.000000E+03

DIOMOD 1 1 1 1

VFB 0 0 0 0

LETA 0 0 0 0

WETA 0 0 0 0

U0 0 0 0 0

TEMP 0 0 0 0

VDD 0 0 0 0

XPART 0 0 0 0



**** SMALL SIGNAL BIAS SOLUTION TEMPERATURE = 27.000 DEG C

******************************************************************************

NODE VOLTAGE NODE VOLTAGE NODE VOLTAGE NODE VOLTAGE

( in) 1.0000 ( out) 1.4500 ( vdd) 3.0000 ($N_0001) 1.1890

($N_0002) 2.3780 ($N_0003) 2.3558

VOLTAGE SOURCE CURRENTS

NAME CURRENT

V_V5 0.000E+00

V_V4 -1.093E-03

TOTAL POWER DISSIPATION 3.28E-03 WATTS



**** OPERATING POINT INFORMATION TEMPERATURE = 27.000 DEG C

******************************************************************************

**** MOSFETS

NAME M_M2 M_M6 M_M7 M_M5 M_M4

MODEL MbreakN MbreakN MbreakN MbreakP MbreakP

ID 1.41E-04 1.41E-04 1.41E-04 6.65E-04 2.86E-04

VGS 1.19E+00 1.19E+00 1.19E+00 0.00E+00 -2.22E-02

VDS 1.45E+00 1.19E+00 1.81E+00 6.44E-01 6.22E-01

VBS 0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00

VTH 0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00

VDSAT 1.19E+00 1.19E+00 1.19E+00 -6.44E-01 -6.44E-01

Lin0/Sat1 -1.00E+00 -1.00E+00 -1.00E+00 -1.00E+00 -1.00E+00

if -1.00E+00 -1.00E+00 -1.00E+00 -1.00E+00 -1.00E+00

ir -1.00E+00 -1.00E+00 -1.00E+00 -1.00E+00 -1.00E+00

TAU -1.00E+00 -1.00E+00 -1.00E+00 -1.00E+00 -1.00E+00

GM 2.38E-04 2.38E-04 2.38E-04 2.58E-05 2.49E-05

GDS 0.00E+00 0.00E+00 0.00E+00 0.00E+00 8.89E-07

GMB 0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00

CBD 0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00

CBS 0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00

CGSOV 0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00

CGDOV 0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00

CGBOV 0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00

CGS 0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00

CGD 0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00

CGB 0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00

NAME M_M3 M_M1

MODEL MbreakND MbreakND-X

ID 6.65E-04 2.86E-04

VGS 0.00E+00 -4.50E-01

VDS 2.36E+00 9.28E-01

VBS 0.00E+00 0.00E+00

VTH -4.00E+00 -4.00E+00

VDSAT 4.00E+00 3.55E+00

Lin0/Sat1 -1.00E+00 -1.00E+00

if -1.00E+00 -1.00E+00

ir -1.00E+00 -1.00E+00

TAU -1.00E+00 -1.00E+00

GM 2.36E-04 9.28E-05

GDS 1.64E-04 2.62E-04

GMB 0.00E+00 0.00E+00

CBD 0.00E+00 0.00E+00

CBS 0.00E+00 0.00E+00

CGSOV 0.00E+00 0.00E+00

CGDOV 0.00E+00 0.00E+00

CGBOV 0.00E+00 0.00E+00

CGS 0.00E+00 0.00E+00

CGD 0.00E+00 0.00E+00

CGB 0.00E+00 0.00E+00



**** INITIAL TRANSIENT SOLUTION TEMPERATURE = 27.000 DEG C

******************************************************************************

NODE VOLTAGE NODE VOLTAGE NODE VOLTAGE NODE VOLTAGE

( in) 1.0000 ( out) 1.4500 ( vdd) 3.0000 ($N_0001) 1.1890

($N_0002) 2.3780 ($N_0003) 2.3558

VOLTAGE SOURCE CURRENTS

NAME CURRENT

V_V5 0.000E+00

V_V4 -1.093E-03

TOTAL POWER DISSIPATION 3.28E-03 WATTS

JOB CONCLUDED

TOTAL JOB TIME .06

Hasil simulasi masukan tegangan ramp adalah sebagai berikut:

Hasil simulasi dengan masukan sinosoida adalah sebagai berikut:

Derdasarkan hasil tersebut, dapat dilihat bahwa nilai output telah mengikuti nilai masukan tetapi

dengan memiliki offset tegangan sebesar 1,2V dan memiliki redaman bila dibandingkan langsung antara

input dan output, hal ini dikarenakan parameter-parameter mosfet masih belum sesuai dengan

rangkaian asli yang diinginkan (parameter adalah hasil generate otomatis dari PSpise sendiri).