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MAX19994A 双通道、 SiGe 、高线性度、 1200MHz 2000MHz 下变频混频器,带有 LO 缓冲器 / 开关 _ _______________________________________________________________ _Maxim Integrated Products__1 19-5197; Rev 0; 4/10 定购信息 概述 MAX19994A双 通 道、 下 变 频 混 频 器 可 为1200MHz 2000MHz 分集接收机应用提供8.4dB 转换增益、+25dBm 输入IP3+14dBm 输入1dB压缩点以及9.8dB 噪声系数。该 混频器针对1450MHz 2050MHz LO 频率范围进行优化, 支持1200MHz 1700MHz 1700MHz 2000MHz RF 频率范围的高端和低端LO 注入架构。 除具有优异的线性度和噪声指标外,该器件还具有非常高 的元件集成度。器件包括两个双平衡无源混频器核、两个 LO 缓冲器、一个双输入LO 选择开关以及一对差分IF输出放 大器。片内集成非平衡变压器使器件能够接收单端RF LO 输入。 MAX19994A需要一个标称为0dBm LO驱动,电 源电流在V CC = 5.0V时的典型值为330mAV CC = 3.3V 时的典型值为264mAMAX19994AMAX9985/MAX9995/MAX19985A/ MAX19993/MAX19995/MAX19995A系列700MHz 2500MHz 混频器引脚兼容,与MAX19997A/MAX19999 系列1850MHz 4000MHz 混频器引脚相似,这使得该系 列下变频混频器非常适合多个频段采用相同PCB 布局的应 用。 器件采用带裸焊盘的6mm x 6mm36引脚薄型QFN 封装。 在扩展级温度范围(T C = -40° C+85° C)内确保电气性能。 应用 WCDMA/LTE 基站 TD-SCDMA基站 GSM/EDGE 基站 cdma2000 ® 基站 无线本地环路 固定宽带无线接入 个人移动无线装置 军用系统 特性 S 1200MHz2000MHz RF频率范围 S 1450MHz2050MHz LO频率范围 S 50MHz500MHz IF频率范围 S 8.4dB (典型值)转换增益 S 9.8dB (典型值)噪声系数 S +25dBm (典型值)输入IP3 S +14dBm (典型值)输入1dB压缩点 S P RF = -10dBm时,具有68dBc (典型值)2LO - 2RF杂散抑制 S 双通道理想用于分集接收机应用 S 47dB (典型值)通道间隔离 S -6dBm+3dBm的低LO驱动 S 集成LO缓冲器 S 内部RFLO非平衡变压器支持单端输入 S 内置SPDT LO开关,LO-LO隔离度为48dB开关时间为50ns S 引脚兼容于MAX9985/MAX9995/MAX19985A/ MAX19993/MAX19995/MAX19995A系列700MHz2200MHz混频器 S 引脚相似于MAX19997A/MAX19999系列1850MHz4000MHz混频器 S 5.0V3.3V单电源供电 S 外部电流设置电阻允许折中选择混频器的低功耗/低性能 工作模式 cdma2000 是电信工业协会的注册商标。 + 表示无铅 (Pb)/ 符合 RoHS 标准的封装。 * EP = 裸焊盘。 T= 卷带包装。 本文是英文数据资料的译文,文中可能存在翻译上的不准确或错误。如需进一步确认,请在您的设计中参考英文资料。 有关价格、供货及订购信息,请联络Maxim亚洲销售中心: 10800 852 1249 ( 北中国区) 10800 152 1249 (南中国区) 或访问Maxim的中文网站:china.maxim-ic.comPART TEMP_RANGE PIN-PACKAGE MAX19994AETX+ -40NC to +85NC 36 Thin QFN-EP* MAX19994AETX+T -40NC to +85NC 36 Thin QFN-EP*

双通道、SiGe、高线性度、1200MHz 2000MHz 下变频混频器,带有 · 2010-09-30 · MAX19994A 双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

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Page 1: 双通道、SiGe、高线性度、1200MHz 2000MHz 下变频混频器,带有 · 2010-09-30 · MAX19994A 双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

MA

X19994A

双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

________________________________________________________________ _Maxim Integrated Products_ _ 1

19-5197; Rev 0; 4/10

定购信息

概述MAX19994A双通道、下变频混频器可为1200MHz至2000MHz分集接收机应用提供8.4dB转换增益、+25dBm输入IP3、+14dBm输入1dB压缩点以及9.8dB噪声系数。该混频器针对1450MHz至2050MHzLO频率范围进行优化,支持1200MHz至1700MHz和1700MHz至2000MHzRF频率范围的高端和低端LO注入架构。

除具有优异的线性度和噪声指标外,该器件还具有非常高

的元件集成度。器件包括两个双平衡无源混频器核、两个

LO缓冲器、一个双输入LO选择开关以及一对差分IF输出放大器。片内集成非平衡变压器使器件能够接收单端RF和LO输入。MAX19994A需要一个标称为0dBm的LO驱动,电源电流在VCC=5.0V时的典型值为330mA、VCC=3.3V时的典型值为264mA。

MAX19994A与MAX9985/MAX9995/MAX19985A/MAX19993/MAX19995/MAX19995A系列700MHz至2500MHz混频器引脚兼容,与MAX19997A/MAX19999系列1850MHz至4000MHz混频器引脚相似,这使得该系列下变频混频器非常适合多个频段采用相同PCB布局的应用。

器件采用带裸焊盘的6mmx6mm、36引脚薄型QFN封装。在扩展级温度范围(TC=-40°C至+85°C)内确保电气性能。

应用WCDMA/LTE基站

TD-SCDMA基站

GSM/EDGE基站

cdma2000®基站

无线本地环路

固定宽带无线接入

个人移动无线装置

军用系统

特性S 1200MHz至2000MHz RF频率范围

S 1450MHz至2050MHz LO频率范围

S 50MHz至500MHz IF频率范围

S 8.4dB (典型值)转换增益

S 9.8dB (典型值)噪声系数

S +25dBm (典型值)输入IP3

S +14dBm (典型值)输入1dB压缩点

S PRF = -10dBm时,具有68dBc (典型值)的2LO - 2RF杂散抑制

S 双通道理想用于分集接收机应用

S 47dB (典型值)通道间隔离

S -6dBm至+3dBm的低LO驱动

S 集成LO缓冲器

S 内部RF和LO非平衡变压器支持单端输入

S 内置SPDT LO开关,LO-LO隔离度为48dB,开关时间为50ns

S 引脚兼容于MAX9985/MAX9995/MAX19985A/MAX19993/MAX19995/MAX19995A系列700MHz至2200MHz混频器

S 引脚相似于MAX19997A/MAX19999系列1850MHz至4000MHz混频器

S 5.0V或3.3V单电源供电

S 外部电流设置电阻允许折中选择混频器的低功耗/低性能工作模式

cdma2000是电信工业协会的注册商标。

+表示无铅(Pb)/符合RoHS标准的封装。*EP=裸焊盘。T=卷带包装。

本文是英文数据资料的译文,文中可能存在翻译上的不准确或错误。如需进一步确认,请在您的设计中参考英文资料。

有关价格、供货及订购信息,请联络Maxim亚洲销售中心:10800 852 1249 (北中国区),10800 152 1249 (南中国区),或访问Maxim的中文网站:china.maxim-ic.com。

PART TEMP_RANGE PIN-PACKAGE

MAX19994AETX+ -40NC to +85NC 36 Thin QFN-EP*

MAX19994AETX+T -40NC to +85NC 36 Thin QFN-EP*

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94A

双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

2

RECOMMENDED_AC_OPERATING_CONDITIONS

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

VCC to GND ..........................................................-0.3V to +5.5VLO1, LO2 to GND .................................................-0.3V to +0.3VLOSEL to GND .........................................-0.3V to (VCC + 0.3V)RFMAIN, RFDIV, and LO_ Input Power ........................+15dBmRFMAIN, RFDIV Current (RF is DC shorted to GND through a balun) ...................50mAContinuous Power Dissipation (Note 1) ..............................8.7WBJA (Notes 1, 3) ............................................................ +38NC/W

BJC (Notes 2, 3) ..............................................................7.4NC/WOperating Case Temperature Range (Note 4) ................................................. -40NC to +85NCJunction Temperature .....................................................+150NCStorage Temperature Range ............................ -65NC to +150NCLead Temperature (soldering, 10s) ................................+300NCSoldering Temperature (reflow) ......................................+260NC

5.0V_SUPPLY_DC_ELECTRICAL_CHARACTERISTICS(Typical Application Circuit, VCC = 4.75V to 5.25V, no input AC signals. TC = -40NC to +85NC, R1 = R4 = 681I, R2 = R5 = 1.82kI. Typical values are at VCC = 5.0V, TC = +25NC, unless otherwise noted. All parameters are production tested.)

3.3V_SUPPLY_DC_ELECTRICAL_CHARACTERISTICS(Typical Application Circuit, VCC = 3.0V to 3.6V, no input AC signals. TC = -40NC to +85NC, R1 = R4 = 681I, R2 = R5 = 1.43kI. Typical values are at VCC = 3.3V, TC = +25NC, unless otherwise noted.)

ABSOLUTE_MAXIMUM_RATINGS

Note_1: Junction temperature TJ = TA + (BJA x VCC x ICC). This formula can be used when the ambient temperature of the PCB is known. The junction temperature must not exceed +150NC.

Note_2: Based on junction temperature TJ = TC + (BJC x VCC x ICC). This formula can be used when the temperature of the exposed pad is known while the device is soldered down to a PCB. See the Applications Information section for details. The junction temperature must not exceed +150NC.

Note_3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to china.maxim-ic.com/thermal-tutorial.

Note_4: TC is the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB.

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Supply Voltage VCC 4.75 5 5.25 V

Supply Current ICC Total supply current 330 420 mA

LOSEL Input High Voltage VIH 2 V

LOSEL Input Low Voltage VIL 0.8 V

LOSEL Input Current IIH and IIL -10 +10 FA

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

RF Frequency fRFC1 = C8 = 39pF (Note 5) 1200 1700

MHzC1 = C8 = 1.8pF, L7 = L8 = 4.7nH (Note 5) 1700 2000

LO Frequency fLO (Note 5) 1450 2050 MHz

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Supply Voltage VCC 3.0 3.3 3.6 V

Supply Current ICC Total supply current 264 mA

LOSEL Input High Voltage VIH 2 V

LOSEL Input Low Voltage VIL 0.8 V

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双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

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5.0V_SUPPLY,_HIGH-SIDE_INJECTION_AC_ELECTRICAL_CHARACTERISTICS(Typical Application Circuit optimized for the Standard_RF_Band (see_Table_1). R1 = R4 = 681I, R2 = R5 = 1.82kI, VCC = 4.75V to 5.25V, RF and LO ports are driven from 50I sources, PLO = -6dBm to +3dBm, PRF = -5dBm, fRF = 1200MHz to 1700MHz, fLO = 1550MHz to 2050MHz, fIF = 350MHz, fRF < fLO, TC = -40NC to +85NC. Typical values are at VCC = 5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1450MHz, fLO = 1800MHz, fIF = 350MHz, TC = +25NC. All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)

RECOMMENDED_AC_OPERATING_CONDITIONS_(continued)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Conversion Gain GC

6.2 8.4 9.8

dBTC = +25NC (Note 7) 7.0 8.4 9.0

TC = +25NC, fRF = 1427MHz to 1463MHz (Note 7)

7.9 8.4 8.9

Conversion Gain Flatness DGC fRF = 1427MHz to 1463MHz Q0.05 dB

Gain Variation Over Temperature TCCG TC = -40NC to +85NC -0.01 dB/NC

Input Compression Point IP1dB fRF = 1450MHz (Notes 7, 8) 12.6 14.0 dBm

Input Third-Order Intercept Point IIP3

fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone 21.5 25.0

dBm

fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone, fRF = 1427MHz to 1463MHz, TC = +25NC (Note 7)

23.0 25.0

fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone, fRF = 1427MHz to 1463MHz

22 25.0

Input Third-Order Intercept Point Variation Over Temperature

TCIIP3fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone, TC = -40NC to +85NC

Q0.75 dBm

Noise Figure (Note 9) NFSSB

Single sideband, no blockers present 9.8 13

dB

fRF = 1427MHz to 1463MHz, TC = +25NC, PLO = 0dBm, single sideband, no blockers present

9.8 11

fRF = 1427MHz to 1463MHz, PLO = 0dBm, single sideband, no blockers present

9.8 12.5

Noise Figure Temperature Coefficient

TCNFSingle sideband, no blockers present, TC = -40NC to +85NC

0.016 dB/NC

Noise Figure with Blocker NFB

PBLOCKER = +8dBm, fRF = 1450MHz, fLO = 1800MHz, fBLOCKER = 1350MHz, PLO = 0dBm, VCC = 5.0V, TC = +25NC (Notes 9, 10)

20.2 22 dB

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

IF Frequency fIF

Using Mini-Circuits TC4-1W-17 4:1 trans-former as defined in the Typical Application Circuit, IF matching components affect the IF frequency range (Note 5)

100 500

MHzUsing alternative Mini-Circuits TC4-1W-7A 4:1 transformer as defined in the Typical Application Circuit, IF matching components affect the IF frequency range (Note 5)

50 250

LO Drive Level PLO (Note 5) -6 +3 dBm

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双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

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5.0V_SUPPLY,_HIGH-SIDE_INJECTION_AC_ELECTRICAL_CHARACTERISTICS_(continued)(Typical Application Circuit optimized for the Standard_RF_Band_(see_Table_1). R1 = R4 = 681I, R2 = R5 = 1.82kI, VCC = 4.75V to 5.25V, RF and LO ports are driven from 50I sources, PLO = -6dBm to +3dBm, PRF = -5dBm, fRF = 1200MHz to 1700MHz, fLO = 1550MHz to 2050MHz, fIF = 350MHz, fRF < fLO, TC = -40NC to +85NC. Typical values are at VCC = 5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1450MHz, fLO = 1800MHz, fIF = 350MHz, TC = +25NC. All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

2LO - 2RF Spur Rejection (Note 9) 2 x 2

fRF = 1450MHz, fLO = 1800MHz, fSPUR = 1625MHz

PRF = -10dBm 57 68

dBc

PRF = -5dBm 52 63

fRF = 1450MHz, fLO = 1800MHz, fSPUR = 1625MHz, PLO = 0dBm, VCC = 5.0V, TC = +25NC

PRF = -10dBm 58 68

PRF = -5dBm 53 63

3LO - 3RF Spur Rejection (Note 9) 3 x 3

fRF = 1450MHz, fLO = 1800MHz, fSPUR = 1683.33MHz

PRF = -10dBm 68 84

dBc

PRF = -5dBm 58 74

fRF = 1450MHz, fLO = 1800MHz, fSPUR = 1683.33MHz, PLO = 0dBm, VCC = 5.0V, TC = +25NC

PRF = -10dBm 70 84

PRF = -5dBm 60 74

RF Input Return LossLO and IF terminated into matched impedance, LO “on”

17 dB

LO Input Return Loss

LO port selected, RF and IF terminated into matched impedance

16

dBLO port unselected, RF and IF terminated into matched impedance

20

IF Output Impedance ZIFNominal differential impedance of the IF outputs

200 I

IF Output Return Loss

RF terminated into 50I, LO driven by 50I source, IF transformed to 50I using external components shown in the Typical Application Circuit

13.0 dB

RF-to-IF Isolation (Note 7) 19 30 dB

LO Leakage at RF Port (Note 7) -42 dBm

2LO Leakage at RF Port (Note 7) -30 dBm

LO Leakage at IF Port (Note 7) -35 dBm

Channel Isolation (Note 7)

RFMAIN converted power measured at IFDIV relative to IFMAIN, all unused ports terminated to 50I

43 47

dBRFDIV converted power measured at IFMAIN relative to IFDIV, all unused ports terminated to 50I

43 47

LO-to-LO IsolationPLO1 = +3dBm, PLO2 = +3dBm, fLO1 = 1800MHz, fLO2 = 1801MHz (Note 7)

42 48 dB

LO Switching Time 50% of LOSEL to IF settled within 2 degrees 50 ns

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双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

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3.3V_SUPPLY,_HIGH-SIDE_INJECTION_AC_ELECTRICAL_CHARACTERISTICS(Typical Application Circuit optimized_ for_ the_Standard_RF_Band_ (see_Table_1). R1 = R4 = 681I, R2 = R5 = 1.43kI. Typical values are at VCC = 3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 1450MHz, fLO = 1800MHz, fIF = 350MHz, TC = +25NC, unless otherwise noted.) (Note 6)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Conversion Gain GC (Note 7) 8.2 dB

Conversion Gain Flatness DGC fRF = 1427MHz to 1463MHz ±0.05 dB

Gain Variation Over Temperature TCCG TC = -40NC to +85NC -0.01 dB/NC

Input Compression Point IP1dB (Note 8) 10.6 dBm

Input Third-Order Intercept Point IIP3 fRF1 - fRF2 = 1MHz 23.6 dBm

Input Third-Order Intercept Point Variation Over Temperature

TCIIP3fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone, TC = -40NC to +85NC

±0.5 dBm

Noise Figure NFSSB Single sideband, no blockers present 9.8 dB

Noise Figure Temperature Coefficient TCNFSingle sideband, no blockers present, TC = -40NC to +85NC

0.016 dB/NC

2LO - 2RF Spur Rejection 2 x 2PRF = -10dBm 68

dBcPRF = -5dBm 63

3LO - 3RF Spur Rejection 3 x 3PRF = -10dBm 77

dBcPRF = -5dBm 67

RF Input Return LossLO and IF terminated into matched impedance, LO “on”

15 dB

LO Input Return Loss

LO port selected, RF and IF terminated into matched impedance

18

dBLO port unselected, RF and IF terminated into matched impedance

21

IF Output Return Loss

RF terminated into 50I, LO driven by 50I source, IF transformed to 50I using external components shown in the Typical Application Circuit

12.5 dB

RF-to-IF Isolation 31 dB

LO Leakage at RF Port -49 dBm

2LO Leakage at RF Port -40 dBm

LO Leakage at IF Port -35 dBm

Channel Isolation

RFMAIN converted power measured at IFDIV relative to IFMAIN, all unused ports terminated to 50I

48

dBRFDIV converted power measured at IFMAIN relative to IFDIV, all unused ports terminated to 50I

48

LO-to-LO IsolationPLO1 = +3dBm, PLO2 = +3dBm, fLO1 = 1800MHz, fLO2 = 1801MHz

50 dB

LO Switching Time 50% of LOSEL to IF settled within 2 degrees 50 ns

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双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

6

5.0V_SUPPLY,_LOW-SIDE_INJECTION_AC_ELECTRICAL_CHARACTERISTICS(Typical Application Circuit optimized_ for_ the_Extended_RF_Band_ (see_Table_1), R1 = R4 = 681I, R2 = R5 = 1.82kI. Typical values are at VCC = 5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1850MHz, fLO = 1500MHz, fIF = 350MHz, TC = +25NC, unless otherwise noted.) (Note 6)

Note_5: Not production tested. Operation outside this range is possible, but with degraded performance of some parameters. See the Typical Operating Characteristics.

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Conversion Gain GC 7.9 dB

Conversion Gain Flatness DGCfRF = 1700MHz to 2000MHz, over any 100MHz band

Q0.06 dB

Gain Variation Over Temperature TCCG TC = -40NC to +85NC -0.007 dB/NC

Input Compression Point IP1dB (Note 8) 13.9 dBm

Input Third-Order Intercept Point IIP3 fRF1 - fRF2 = 1MHz 24.9 dBm

Input Third-Order Intercept Point Variation Over Temperature

TCIIP3fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone,TC = -40NC to +85NC

Q0.6 dBm

Noise Figure NFSSB Single sideband, no blockers present 10.2 dB

Noise Figure Temperature Coefficient TCNFSingle sideband, no blockers present, TC = -40NC to +85NC

0.017 dB/NC

2RF - 2LO Spur Rejection 2 x 2PRF = -10dBm 68

dBcPRF = -5dBm 63

3RF - 3LO Spur Rejection 3 x 3PRF = -10dBm 87

dBcPRF = -5dBm 77

RF Input Return LossLO and IF terminated into matched impedance, LO “on”

14 dB

LO Input Return Loss

LO port selected, RF and IF terminated into matched impedance

29

dBLO port unselected, RF and IF terminated into matched impedance

28

IF Output Return Loss

RF terminated into 50I, LO driven by 50I source, IF transformed to 50I using external components shown in the Typical Application Circuit

14.5 dB

RF-to-IF Isolation 37 dB

LO Leakage at RF Port -52 dBm

2LO Leakage at RF Port -29 dBm

LO Leakage at IF Port -19.4 dBm

Channel Isolation

RFMAIN converted power measured at IFDIV relative to IFMAIN, all unused ports terminated to 50I

43

dBRFDIV converted power measured at IFMAIN relative to IFDIV, all unused ports terminated to 50I

43

LO-to-LO IsolationPLO1 = +3dBm, PLO2 = +3dBm, fLO1 = 1500MHz, fLO2 = 1501MHz

54 dB

LO Switching Time 50% of LOSEL to IF settled within 2 degrees 50 ns

Page 7: 双通道、SiGe、高线性度、1200MHz 2000MHz 下变频混频器,带有 · 2010-09-30 · MAX19994A 双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

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X19994A

双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

7

Note_6: All limits reflect losses of external components, including a 0.8dB loss at fIF = 350MHz due to the 4:1 transformer. Output measurements were taken at IF outputs of the Typical Application Circuit.

Note_7: 100% production tested for functionality.Note_8: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50I source.Note_9: Not production tested.Note_10: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects

of all SNR degradations in the mixer, including the LO noise, as defined in Application Note 2021: Specifications and Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.

典型工作特性(Typical Application Circuit optimized_for_the_Standard_RF_Band_(see_Table_1). VCC_=_5.0V,_fRF_=_1200MHz_to_1700MHz,_LO_is_high-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)

CONVERSION GAIN vs. RF FREQUENCY

MAX

1999

4A to

c01

RF FREQUENCY (MHz)

CONV

ERSI

ON G

AIN

(dB)

1600150014001300

7

8

9

10

61200 1700

TC = +85°C

TC = -40°C

TC = +25°C

CONVERSION GAIN vs. RF FREQUENCY

MAX

1999

4A to

c02

RF FREQUENCY (MHz)

CONV

ERSI

ON G

AIN

(dB)

1600150014001300

7

8

9

10

61200 1700

PLO = -6dBm, -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

CONV

ERSI

ON G

AIN

(dB)

1600150014001300

7

8

9

10

61200 1700

CONVERSION GAIN vs. RF FREQUENCY

MAX

1999

4A to

c03

VCC = 4.75V, 5.0V, 5.25V

INPUT IP3 vs. RF FREQUENCY

MAX

1999

4A to

c04

RF FREQUENCY (MHz)

INPU

T IP

3 (d

Bm)

1600150014001300

23

24

25

26

27

221200 1700

TC = +25°C

TC = +85°C

TC = -40°C

PRF = -5dBm/TONE

INPUT IP3 vs. RF FREQUENCY

MAX

1999

4A to

c05

RF FREQUENCY (MHz)

INPU

T IP

3 (d

Bm)

1600150014001300

23

24

25

26

27

221200 1700

PLO = -3dBm

PLO = +3dBm PLO = 0dBm

PLO = -6dBm

PRF = -5dBm/TONE

INPUT IP3 vs. RF FREQUENCY

MAX

1999

4A to

c06

RF FREQUENCY (MHz)

INPU

T IP

3 (d

Bm)

1600150014001300

23

24

25

26

27

221200 1700

VCC = 5.0V

VCC = 5.25V

VCC = 4.75V

PRF = -5dBm/TONE

Page 8: 双通道、SiGe、高线性度、1200MHz 2000MHz 下变频混频器,带有 · 2010-09-30 · MAX19994A 双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

MA

X199

94A

双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

8

典型工作特性(续)(Typical Application Circuit optimized_for_the_Standard_RF_Band_(see_Table_1). VCC_=_5.0V,_fRF_=_1200MHz_to_1700MHz,_LO_is_high-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)

NOISE FIGURE vs. RF FREQUENCY

MAX

1999

4A to

c07

RF FREQUENCY (MHz)

NOIS

E FI

GURE

(dB)

1600150014001300

7

8

9

10

11

12

61200 1700

TC = -40°C

TC = +85°C

TC = +25°C

NOISE FIGURE vs. RF FREQUENCY

MAX

1999

4A to

c08

RF FREQUENCY (MHz)

NOIS

E FI

GURE

(dB)

1600150014001300

7

8

9

10

11

12

61200 1700

PLO = -6dBm, -3dBm, 0dBm, +3dBm

NOISE FIGURE vs. RF FREQUENCY

MAX

1999

4A to

c09

RF FREQUENCY (MHz)

NOIS

E FI

GURE

(dB)

1600150014001300

7

8

9

10

11

12

61200 1700

VCC = 4.75V, 5.0V, 5.25V

2LO - 2RF RESPONSE vs. RF FREQUENCY

MAX

1999

4A to

c10

RF FREQUENCY (MHz)

2LO

- 2RF

RES

PONS

E (d

Bc)

1600150014001300

60

70

80

501200 1700

TC = -40°C

TC = +85°C

PRF = -5dBm

TC = +25°C

2LO - 2RF RESPONSE vs. RF FREQUENCYM

AX19

994A

toc1

1

RF FREQUENCY (MHz)

2LO

- 2RF

RES

PONS

E (d

Bc)

1600150014001300

60

70

80

501200 1700

PLO = -3dBm

PRF = -5dBm

PLO = -6dBm

PLO = +3dBm PLO = 0dBm

2LO - 2RF RESPONSE vs. RF FREQUENCY

MAX

1999

4A to

c12

RF FREQUENCY (MHz)

2LO

- 2RF

RES

PONS

E (d

Bc)

1600150014001300

60

70

80

501200 1700

PRF = -5dBm

VCC = 4.75V, 5.0V, 5.25V

3LO - 3RF RESPONSE vs. RF FREQUENCY

MAX

1999

4A to

c13

RF FREQUENCY (MHz)

3LO

- 3RF

RES

PONS

E (d

Bc)

1600150014001300

65

75

85

95

551200 1700

TC = +85°C

TC = +25°C

TC = -40°C

PRF = -5dBm

3LO - 3RF RESPONSE vs. RF FREQUENCY

MAX

1999

4A to

c14

RF FREQUENCY (MHz)

3LO

- 3RF

RES

PONS

E (d

Bc)

1600150014001300

65

75

85

95

551200 1700

PLO = -3dBm, 0dBm, +3dBm

PRF = -5dBm

PLO = -6dBm

3LO - 3RF RESPONSE vs. RF FREQUENCYM

AX19

994A

toc1

5

RF FREQUENCY (MHz)

3LO

- 3RF

RES

PONS

E (d

Bc)

1600150014001300

65

75

85

95

551200 1700

VCC = 5.0V

VCC = 5.25V

PRF = -5dBm

VCC = 4.75V

Page 9: 双通道、SiGe、高线性度、1200MHz 2000MHz 下变频混频器,带有 · 2010-09-30 · MAX19994A 双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

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X19994A

双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

9

典型工作特性(续)(Typical Application Circuit optimized_for_the_Standard_RF_Band_(see_Table_1). VCC_=_5.0V,_fRF_=_1200MHz_to_1700MHz,_LO_is_high-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)

INPUT P1dB vs. RF FREQUENCY

MAX

1999

4A to

c16

RF FREQUENCY (MHz)

INPU

T P 1

dB (d

Bm)

1600150014001300

12

13

14

15

16

111200 1700

TC = +85°C

TC = +25°C

TC = -40°C

INPUT P1dB vs. RF FREQUENCY

MAX

1999

4A to

c17

RF FREQUENCY (MHz)

INPU

T P 1

dB (d

Bm)

1600150014001300

12

13

14

15

16

111200 1700

PLO = -6dBm, -3dBm, 0dBm, +3dBm

INPUT P1dB vs. RF FREQUENCY

MAX

1999

4A to

c18

RF FREQUENCY (MHz)

INPU

T P 1

dB (d

Bm)

1600150014001300

12

13

14

15

16

111200 1700

VCC = 4.75V

VCC = 5.25V

VCC = 5.0V

CHANNEL ISOLATION vs. RF FREQUENCY

MAX

1999

4A to

c19

RF FREQUENCY (MHz)

CHAN

NEL

ISOL

ATIO

N (d

B)

1600150014001300

35

40

45

50

55

60

301200 1700

TC = -40°C, +25°C, +85°C

CHANNEL ISOLATION vs. RF FREQUENCYM

AX19

994A

toc2

0

RF FREQUENCY (MHz)

CHAN

NEL

ISOL

ATIO

N (d

B)

1600150014001300

35

40

45

50

55

60

301200 1700

PLO = -6dBm, -3dBm, 0dBm, +3dBm

CHANNEL ISOLATION vs. RF FREQUENCY

MAX

1999

4A to

c21

RF FREQUENCY (MHz)

CHAN

NEL

ISOL

ATIO

N (d

B)

1600150014001300

35

40

45

50

55

60

301200 1700

VCC = 4.75V, 5.0V, 5.25V

LO LEAKAGE AT IF PORT vs. LO FREQUENCY

MAX

1999

4A to

c22

LO FREQUENCY (MHz)

LO L

EAKA

GE A

T IF

POR

T (d

Bm)

1950185017501650

-45

-40

-35

-30

-25

-20

-501550 2050

TC = +25°C

TC = -40°C

TC = +85°C

LO LEAKAGE AT IF PORT vs. LO FREQUENCY

MAX

1999

4A to

c23

LO FREQUENCY (MHz)

LO L

EAKA

GE A

T IF

POR

T (d

Bm)

1950185017501650

-45

-40

-35

-30

-25

-20

-501550 2050

PLO = -6dBm

PLO = -3dBm

PLO = 0dBm

PLO = +3dBm

LO LEAKAGE AT IF PORT vs. LO FREQUENCY

MAX

1999

4A to

c24

LO FREQUENCY (MHz)

LO L

EAKA

GE A

T IF

POR

T (d

Bm)

1950185017501650

-45

-40

-35

-30

-25

-20

-501550 2050

VCC = 4.75VVCC = 5.0V

VCC = 5.25V

Page 10: 双通道、SiGe、高线性度、1200MHz 2000MHz 下变频混频器,带有 · 2010-09-30 · MAX19994A 双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

MA

X199

94A

双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

10

典型工作特性(续)(Typical Application Circuit optimized_for_the_Standard_RF_Band_(see_Table_1). VCC_=_5.0V,_fRF_=_1200MHz_to_1700MHz,_LO_is_high-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)

RF-TO-IF ISOLATION vs. RF FREQUENCY

MAX

1999

4A to

c25

RF FREQUENCY (MHz)

RF-T

O-IF

ISOL

ATIO

N (d

B)

1600150014001300

30

40

50

201200 1700

TC = +25°C

TC = -40°C

TC = +85°C

RF-TO-IF ISOLATION vs. RF FREQUENCY

MAX

1999

4A to

c26

RF FREQUENCY (MHz)

RF-T

O-IF

ISOL

ATIO

N (d

B)

1600150014001300

30

40

50

201200 1700

PLO = -6dBm

PLO = -3dBm

PLO = 0dBm

PLO = +3dBm

RF-TO-IF ISOLATION vs. RF FREQUENCY

MAX

1999

4A to

c27

RF FREQUENCY (MHz)

RF-T

O-IF

ISOL

ATIO

N (d

B)

1600150014001300

30

40

50

201200 1700

VCC = 4.75V

VCC = 5.0V

VCC = 5.25V

LO LEAKAGE AT RF PORTvs. LO FREQUENCY

MAX

1999

4A to

c28

LO FREQUENCY (MHz)

LO L

EAKA

GE A

T RF

POR

T (d

Bm)

200018001600

-60

-50

-40

-30

-20

-701400 2200

TC = +25°C

TC = -40°C

TC = +85°C

LO LEAKAGE AT RF PORTvs. LO FREQUENCY

MAX

1999

4A to

c29

LO FREQUENCY (MHz)

LO L

EAKA

GE A

T RF

POR

T (d

Bm)

200018001600

-60

-50

-40

-30

-20

-701400 2200

PLO = -6dBmPLO = -3dBm

PLO = 0dBmPLO = +3dBm

LO LEAKAGE AT RF PORTvs. LO FREQUENCY

MAX

1999

4A to

c30

LO FREQUENCY (MHz)

LO L

EAKA

GE A

T RF

POR

T (d

Bm)

200018001600

-60

-50

-40

-30

-20

-701400 2200

VCC = 4.75V, 5.0V, 5.25V

2LO LEAKAGE AT RF PORTvs. LO FREQUENCY

MAX

1999

4A to

c31

LO FREQUENCY (MHz)

2LO

LEAK

AGE

AT R

F PO

RT (d

Bm)

200018001600

-50

-40

-30

-20

-10

-601400 2200

TC = +25°C

TC = -40°C

TC = +85°C

PLO = +3dBm

2LO LEAKAGE AT RF PORTvs. LO FREQUENCY

MAX

1999

4A to

c32

LO FREQUENCY (MHz)

2LO

LEAK

AGE

AT R

F PO

RT (d

Bm)

200018001600

-50

-40

-30

-20

-10

-601400 2200

PLO = -6dBm

PLO = -3dBm

PLO = 0dBm

2LO LEAKAGE AT RF PORTvs. LO FREQUENCY

MAX

1999

4A to

c33

LO FREQUENCY (MHz)

2LO

LEAK

AGE

AT R

F PO

RT (d

Bm)

200018001600

-50

-40

-30

-20

-10

-601400 2200

VCC = 4.75VVCC = 5.0V

VCC = 5.25V

Page 11: 双通道、SiGe、高线性度、1200MHz 2000MHz 下变频混频器,带有 · 2010-09-30 · MAX19994A 双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

MA

X19994A

双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

11

典型工作特性(续)(Typical Application Circuit optimized_for_the_Standard_RF_Band_(see_Table_1). VCC_=_5.0V,_fRF_=_1200MHz_to_1700MHz,_LO_is_high-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)

LO SWITCH ISOLATIONvs. LO FREQUENCY

MAX

1999

4A to

c34

LO FREQUENCY (MHz)

LO S

WIT

CH IS

OLAT

ION

(dB)

200018001600

45

55

65

351400 2200

TC = +25°C

TC = -40°C

TC = +85°C

LO SWITCH ISOLATIONvs. LO FREQUENCY

MAX

1999

4A to

c35

LO FREQUENCY (MHz)

LO S

WIT

CH IS

OLAT

ION

(dB)

200018001600

45

55

65

351400 2200

PLO = -6dBm, -3dBm, 0dBm, +3dBm

LO SWITCH ISOLATIONvs. LO FREQUENCY

MAX

1999

4A to

c36

LO FREQUENCY (MHz)

LO S

WIT

CH IS

OLAT

ION

(dB)

200018001600

45

55

65

351400 2200

VCC = 4.75V, 5.0V, 5.25V

RF PORT RETURN LOSSvs. RF FREQUENCY

MAX

1999

4A to

c37

RF FREQUENCY (MHz)

RF P

ORT

RETU

RN L

OSS

(dB)

1600150014001300

25

20

15

10

5

0

301200 1700

PLO = -6dBm, -3dBm, 0dBm, +3dBm

IF = 350MHz

IF PORT RETURN LOSS vs. IF FREQUENCYM

AX19

994A

toc3

8

IF FREQUENCY (MHz)

IF P

ORT

RETU

RN L

OSS

(dB)

410320230140

25

20

15

10

5

0

3050 500

VCC = 4.75V, 5.0V, 5.25V

LO = 2050MHz

LO = 1550MHz

LO = 1800MHz

LO SELECTED PORT RETURN LOSSvs. LO FREQUENCY

MAX

1999

4A to

c39

LO FREQUENCY (MHz)

LO S

ELEC

TED

PORT

RET

URN

LOSS

(dB)

200018001600

30

20

10

0

401400 2200

PLO = -6dBm

PLO = -3dBm

PLO = 0dBm

PLO = +3dBm

LO UNSELECTED PORT RETURN LOSSvs. LO FREQUENCY

MAX

1999

4A to

c40

LO FREQUENCY (MHz)

LO U

NSEL

ECTE

D PO

RT R

ETUR

N LO

SS (d

B)

200018001600

30

20

10

0

401400 2200

PLO = -6dBm, -3dBm, 0dBm, +3dBm

SUPPLY CURRENT vs.TEMPERATURE (TC)

MAX

1999

4A to

c41

TEMPERATURE (°C)

SUPP

LY C

URRE

NT (m

A)

603510-15

310

320

330

340

350

360

300-40 85

VCC = 4.75VVCC = 5.0V

VCC = 5.25V

Page 12: 双通道、SiGe、高线性度、1200MHz 2000MHz 下变频混频器,带有 · 2010-09-30 · MAX19994A 双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

MA

X199

94A

双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

12

典型工作特性(续)(Typical Application Circuit optimized_for_the_Standard_RF_Band_(see_Table_1). VCC_=_3.3V,_fRF_=_1200MHz_to_1700MHz,_LO_is_high-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)

CONVERSION GAIN vs. RF FREQUENCY

MAX

1999

4A to

c43

RF FREQUENCY (MHz)

CONV

ERSI

ON G

AIN

(dB)

1600150014001300

7

8

9

10

61200 1700

VCC = 3.3V

PLO = -6dBm, -3dBm, 0dBm, +3dBm

CONVERSION GAIN vs. RF FREQUENCY

MAX

1999

4A to

c44

RF FREQUENCY (MHz)

CONV

ERSI

ON G

AIN

(dB)

1600150014001300

7

8

9

10

61200 1700

VCC = 3.0V

VCC = 3.3V

VCC = 3.6V

INPUT IP3 vs. RF FREQUENCY

MAX

1999

4A to

c45

RF FREQUENCY (MHz)

INPU

T IP

3 (d

Bm)

1600150014001300

21

22

23

24

25

26

201200 1700

TC = +25°C

TC = -40°C

TC = +85°CVCC = 3.3V

PRF = -5dBm/TONE

INPUT IP3 vs. RF FREQUENCYM

AX19

994A

toc4

6

RF FREQUENCY (MHz)

INPU

T IP

3 (d

Bm)

1600150014001300

21

22

23

24

25

26

201200 1700

VCC = 3.3VPRF = -5dBm/TONE

PLO = -6dBm

PLO = -3dBm

PLO = 0dBmPLO = +3dBm

INPUT IP3 vs. RF FREQUENCY

MAX

1999

4A to

c47

RF FREQUENCY (MHz)

INPU

T IP

3 (d

Bm)

1600150014001300

21

22

23

24

25

26

201200 1700

PRF = -5dBm/TONEVCC = 3.6V

VCC = 3.0V VCC = 3.3V

NOISE FIGURE vs. RF FREQUENCY

MAX

1999

4A to

c48

RF FREQUENCY (MHz)

NOIS

E FI

GURE

(dB)

1600150014001300

8

9

10

11

12

13

71200 1700

VCC = 3.3V

TC = +25°C

TC = -40°C

TC = +85°C

NOISE FIGURE vs. RF FREQUENCY

MAX

1999

4A to

c49

RF FREQUENCY (MHz)

NOIS

E FI

GURE

(dB)

1600150014001300

8

9

10

11

12

13

71200 1700

VCC = 3.3V

PLO = -6dBm, -3dBm, 0dBm, +3dBm

NOISE FIGURE vs. RF FREQUENCYM

AX19

994A

toc5

0

RF FREQUENCY (MHz)

NOIS

E FI

GURE

(dB)

1600150014001300

8

9

10

11

12

13

71200 1700

VCC = 3.0V, 3.3V, 3.6V

CONVERSION GAIN vs. RF FREQUENCY

MAX

1999

4A to

c42

RF FREQUENCY (MHz)

CONV

ERSI

ON G

AIN

(dB)

1600150014001300

7

8

9

10

61200 1700

TC = +25°CTC = +85°C

VCC = 3.3VTC = -40°C

Page 13: 双通道、SiGe、高线性度、1200MHz 2000MHz 下变频混频器,带有 · 2010-09-30 · MAX19994A 双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

MA

X19994A

双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

13

典型工作特性(续)(Typical Application Circuit optimized_for_the_Standard_RF_Band_(see_Table_1). VCC_=_3.3V,_fRF_=_1200MHz_to_1700MHz,_LO_is_high-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)

2LO - 2RF RESPONSE vs. RF FREQUENCY

MAX

1999

4A to

c51

RF FREQUENCY (MHz)

2LO

- 2RF

RES

PONS

E (d

Bc)

1600150014001300

60

70

80

501200 1700

TC = +25°CTC = -40°C

TC = +85°C

VCC = 3.3VPRF = -5dBm

2LO - 2RF RESPONSE vs. RF FREQUENCY

MAX

1999

4A to

c52

RF FREQUENCY (MHz)

2LO

- 2RF

RES

PONS

E (d

Bc)

1600150014001300

60

70

80

501200 1700

VCC = 3.3VPRF = -5dBm

PLO = -6dBm PLO = -3dBm

PLO = 0dBm

PLO = +3dBm

2LO - 2RF RESPONSE vs. RF FREQUENCY

MAX

1999

4A to

c53

RF FREQUENCY (MHz)

2LO

- 2RF

RES

PONS

E (d

Bc)

1600150014001300

60

70

80

501200 1700

PRF = -5dBm

VCC = 3.0VVCC = 3.3V

VCC = 3.6V

3LO - 3RF RESPONSE vs. RF FREQUENCY

MAX

1999

4A to

c54

RF FREQUENCY (MHz)

3LO

- 3RF

RES

PONS

E (d

Bc)

1600150014001300

55

65

75

85

451200 1700

TC = +25°C

TC = -40°C

TC = +85°C

VCC = 3.3VPRF = -5dBm

3LO - 3RF RESPONSE vs. RF FREQUENCYM

AX19

994A

toc5

5

RF FREQUENCY (MHz)

3LO

- 3RF

RES

PONS

E (d

Bc)

1600150014001300

55

65

75

85

451200 1700

VCC = 3.3VPRF = -5dBm

PLO = -6dBm, -3dBm, 0dBm, +3dBm

3LO - 3RF RESPONSE vs. RF FREQUENCY

MAX

1999

4A to

c56

RF FREQUENCY (MHz)

3LO

- 3RF

RES

PONS

E (d

Bc)

1600150014001300

55

65

75

85

451200 1700

PRF = -5dBm

VCC = 3.0V

VCC = 3.3V

VCC = 3.6V

INPUT P1dB vs. RF FREQUENCY

MAX

1999

4A to

c57

RF FREQUENCY (MHz)

INPU

T P 1

dB (d

Bm)

1600150014001300

9

10

11

12

13

81200 1700

TC = +25°C

TC = -40°C

TC = +85°C

VCC = 3.3V

INPUT P1dB vs. RF FREQUENCY

MAX

1999

4A to

c58

RF FREQUENCY (MHz)

INPU

T P 1

dB (d

Bm)

1600150014001300

9

10

11

12

13

81200 1700

VCC = 3.3V

PLO = -6dBm, -3dBm, 0dBm, +3dBm

INPUT P1dB vs. RF FREQUENCYM

AX19

994A

toc5

9

RF FREQUENCY (MHz)

INPU

T P 1

dB (d

Bm)

1600150014001300

9

10

11

12

13

81200 1700

VCC = 3.6V

VCC = 3.0V

VCC = 3.3V

Page 14: 双通道、SiGe、高线性度、1200MHz 2000MHz 下变频混频器,带有 · 2010-09-30 · MAX19994A 双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

MA

X199

94A

双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

14

典型工作特性(续)(Typical Application Circuit optimized_for_the_Standard_RF_Band_(see_Table_1). VCC_=_3.3V,_fRF_=_1200MHz_to_1700MHz,_LO_is_high-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)

CHANNEL ISOLATIONvs. RF FREQUENCY

MAX

1999

4A to

c61

RF FREQUENCY (MHz)

CHAN

NEL

ISOL

ATIO

N (d

B)

1600150014001300

35

40

45

50

55

60

301200 1700

PLO = -6dBm, -3dBm, 0dBm, +3dBm

VCC = 3.3V

CHANNEL ISOLATIONvs. RF FREQUENCY

MAX

1999

4A to

c62

RF FREQUENCY (MHz)

CHAN

NEL

ISOL

ATIO

N (d

B)

1600150014001300

35

40

45

50

55

60

301200 1700

VCC = 3.0V, 3.3V, 3.6V

LO LEAKAGE AT IF PORT vs. LO FREQUENCY

MAX

1999

4A to

c63

LO FREQUENCY (MHz)

LO L

EAKA

GE A

T IF

POR

T (d

Bm)

1950185017501650

-45

-40

-35

-30

-25

-20

-501550 2050

TC = +25°C

TC = +85°C

TC = -40°C

VCC = 3.3V

LO LEAKAGE AT IF PORT vs. LO FREQUENCY

MAX

1999

4A to

c64

LO FREQUENCY (MHz)

LO L

EAKA

GE A

T IF

POR

T (d

Bm)

1950185017501650

-45

-40

-35

-30

-25

-20

-501550 2050

PLO = -3dBmPLO = -6dBm

PLO = +3dBm

PLO = 0dBm

VCC = 3.3V

LO LEAKAGE AT IF PORT vs. LO FREQUENCY

MAX

1999

4A to

c65

LO FREQUENCY (MHz)

LO L

EAKA

GE A

T IF

POR

T (d

Bm)

1950185017501650

-45

-40

-35

-30

-25

-20

-501550 2050

VCC = 3.0V

VCC = 3.3V

VCC = 3.6V

RF-TO-IF ISOLATIONvs. RF FREQUENCY

MAX

1999

4A to

c66

RF-T

O-IF

ISOL

ATIO

N (d

B)

30

40

50

20

RF FREQUENCY (MHz)

16001500140013001200 1700

TC = -40°C

TC = +25°C

TC = +85°CVCC = 3.3V

RF-TO-IF ISOLATIONvs. RF FREQUENCY

MAX

1999

4A to

c67

RF-T

O-IF

ISOL

ATIO

N (d

B)

30

40

50

20

RF FREQUENCY (MHz)

16001500140013001200 1700

PLO = -6dBm

PLO = +3dBm

PLO = -3dBm

VCC = 3.3V

PLO = 0dBm

RF-TO-IF ISOLATIONvs. RF FREQUENCY

MAX

1999

4A to

c68

RF-T

O-IF

ISOL

ATIO

N (d

B)

30

40

50

20

RF FREQUENCY (MHz)

16001500140013001200 1700

VCC = 3.6V

VCC = 3.3V

VCC = 3.0V

CHANNEL ISOLATION vs. RF FREQUENCY

MAX

1999

4A to

c60

RF FREQUENCY (MHz)

CHAN

NEL

ISOL

ATIO

N (d

B)

1600150014001300

35

40

45

50

55

60

301200 1700

TC = -40°C, +25°C, +85°C

VCC = 3.3V

Page 15: 双通道、SiGe、高线性度、1200MHz 2000MHz 下变频混频器,带有 · 2010-09-30 · MAX19994A 双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

MA

X19994A

双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

15

典型工作特性(续)(Typical Application Circuit optimized_for_the_Standard_RF_Band_(see_Table_1). VCC_=_3.3V,_fRF_=_1200MHz_to_1700MHz,_LO_is_high-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)

LO LEAKAGE AT RF PORTvs. LO FREQUENCY

MAX

1999

4A to

c69

LO FREQUENCY (MHz)

LO L

EAKA

GE A

T RF

POR

T (d

Bm)

200018001600

-60

-50

-40

-30

-20

-701400 2200

TC = -40°C

TC = +25°C

TC = +85°C

VCC = 3.3V

LO LEAKAGE AT RF PORTvs. LO FREQUENCY

MAX

1999

4A to

c70

LO FREQUENCY (MHz)

LO L

EAKA

GE A

T RF

POR

T (d

Bm)

200018001600

-60

-50

-40

-30

-20

-701400 2200

PLO = +3dBm

PLO = 0dBm

PLO = -6dBm

PLO = -3dBm

VCC = 3.3V

LO LEAKAGE AT RF PORTvs. LO FREQUENCY

MAX

1999

4A to

c71

LO FREQUENCY (MHz)

LO L

EAKA

GE A

T RF

POR

T (d

Bm)

200018001600

-60

-50

-40

-30

-20

-701400 2200

VCC = 3.6V

VCC = 3.3V

VCC = 3.0V

2LO LEAKAGE AT RF PORTvs. LO FREQUENCY

MAX

1999

4A to

c72

LO FREQUENCY (MHz)

2LO

LEAK

AGE

AT R

F PO

RT (d

Bm)

200018001600

-50

-40

-30

-20

-10

-601400 2200

VCC = 3.3V

TC = +85°C

TC = +25°C

TC = -40°C

2LO LEAKAGE AT RF PORTvs. LO FREQUENCY

MAX

1999

4A to

c73

LO FREQUENCY (MHz)

2LO

LEAK

AGE

AT R

F PO

RT (d

Bm)

200018001600

-50

-40

-30

-20

-10

-601400 2200

VCC = 3.3V

PLO = +3dBm

PLO = -6dBm

PLO = 0dBm

PLO = -3dBm

2LO LEAKAGE AT RF PORTvs. LO FREQUENCY

MAX

1999

4A to

c74

LO FREQUENCY (MHz)

2LO

LEAK

AGE

AT R

F PO

RT (d

Bm)

200018001600

-50

-40

-30

-20

-10

-601400 2200

VCC = 3.6V VCC = 3.3V

VCC = 3.0V

LO S

WIT

CH IS

OLAT

ION

(dB)

45

55

65

35

LO SWITCH ISOLATIONvs. LO FREQUENCY

MAX

1999

4A to

c75

TC = +25°C

TC = +85°C

LO FREQUENCY (MHz)

2000180016001400 2200

TC = -40°C

VCC = 3.3V

LO S

WIT

CH IS

OLAT

ION

(dB)

45

55

65

35

LO SWITCH ISOLATIONvs. LO FREQUENCY

MAX

1999

4A to

c76

LO FREQUENCY (MHz)

2000180016001400 2200

VCC = 3.3V

PLO = -6dBm, -3dBm, 0dBm, +3dBm

LO S

WIT

CH IS

OLAT

ION

(dB)

45

55

65

35

LO SWITCH ISOLATIONvs. LO FREQUENCY

MAX

1999

4A to

c77

LO FREQUENCY (MHz)

2000180016001400 2200

VCC = 3.0V, 3.3V, 3.6V

Page 16: 双通道、SiGe、高线性度、1200MHz 2000MHz 下变频混频器,带有 · 2010-09-30 · MAX19994A 双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

MA

X199

94A

双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

16

典型工作特性(续)(Typical Application Circuit optimized_for_the_Standard_RF_Band_(see_Table_1). VCC_=_3.3V,_fRF_=_1200MHz_to_1700MHz,_LO_is_high-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)

IF PORT RETURN LOSSvs. IF FREQUENCY

MAX

1999

4A to

c79

IF FREQUENCY (MHz)

IF P

ORT

RETU

RN L

OSS

(dB)

410320230140

25

20

15

10

5

0

3050 500

VCC = 3.3V

LO = 1550MHz

LO = 1800MHz

LO = 2050MHz

LO SELECTED PORT RETURN LOSSvs. LO FREQUENCY

MAX

1999

4A to

c80

LO S

ELEC

TED

PORT

RET

URN

LOSS

(dB)

30

20

10

0

40

LO FREQUENCY (MHz)

2000180016001400 2200

PLO = +3dBm

PLO = 0dBm

PLO = -6dBm

PLO = -3dBm

VCC = 3.3V

LO UNSELECTED PORT RETURN LOSSvs. LO FREQUENCY

MAX

1999

4A to

c81

LO FREQUENCY (MHz)

LO U

NSEL

ECTE

D PO

RT R

ETUR

N LO

SS (d

B)

200018001600

30

20

10

0

401400 2200

PLO = -6dBm, -3dBm, 0dBm, +3dBm

VCC = 3.3V

SUPPLY CURRENTvs. TEMPERATURE (TC)

MAX

1999

4A to

c82

TEMPERATURE (°C)

SUPP

LY C

URRE

NT (m

A)

603510-15

240

260

280

300

220-40 85

VCC = 3.0V

VCC = 3.3V

VCC = 3.6V

RF PORT RETURN LOSSvs. RF FREQUENCY

MAX

1999

4A to

c78

RF FREQUENCY (MHz)

RF P

ORT

RETU

RN L

OSS

(dB)

1600150014001300

25

20

15

10

5

0

301200 1700

PLO = -6dBm, -3dBm, 0dBm, +3dBm

VCC = 3.3VIF = 350MHz

Page 17: 双通道、SiGe、高线性度、1200MHz 2000MHz 下变频混频器,带有 · 2010-09-30 · MAX19994A 双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

MA

X19994A

双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

17

典型工作特性(续)(Typical Application Circuit optimized_for_the_Extended_RF_Band_(see_Table_1). VCC_=_5.0V,_fRF_=_1700MHz_to_2000MHz,_LO_is_low-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)

INPUT IP3 vs. RF FREQUENCYM

AX19

994A

toc8

7

RF FREQUENCY (MHz)

INPU

T IP

3 (d

Bm)

19001800

22

24

26

28

201700 2000

PRF = -5dBm/TONE

PLO = -3dBm, 0dBm, +3dBm

INPUT IP3 vs. RF FREQUENCY

MAX

1999

4A to

c86

RF FREQUENCY (MHz)

INPU

T IP

3 (d

Bm)

19001800

22

24

26

28

201700 2000

TC = +25°C

TC = -40°C

TC = +85°C

PRF = -5dBm/TONE

CONVERSION GAIN vs. RF FREQUENCY

MAX

1999

4A to

c85

RF FREQUENCY (MHz)

CONV

ERSI

ON G

AIN

(dB)

19001800

7

8

9

10

61700 2000

VCC = 4.75V, 5.0V, 5.25V

CONVERSION GAIN vs. RF FREQUENCY

MAX

1999

4A to

c84

RF FREQUENCY (MHz)

CONV

ERSI

ON G

AIN

(dB)

19001800

7

8

9

10

61700 2000

PLO = -3dBm, 0dBm, +3dBm

CONVERSION GAIN vs. RF FREQUENCY

MAX

1999

4A to

c83

RF FREQUENCY (MHz)

CONV

ERSI

ON G

AIN

(dB)

19001800

7

8

9

10

61700 2000

TC = +25°C

TC = -40°C

TC = +85°C

NOISE FIGURE vs. RF FREQUENCYM

AX19

994A

toc9

1

RF FREQUENCY (MHz)

NOIS

E FI

GURE

(dB)

19001800

8

9

10

11

12

13

71700 2000

VCC = 4.75V, 5.0V, 5.25V

NOISE FIGURE vs. RF FREQUENCY

MAX

1999

4A to

c90

RF FREQUENCY (MHz)

NOIS

E FI

GURE

(dB)

19001800

8

9

10

11

12

13

71700 2000

PLO = -3dBm, 0dBm, +3dBm

NOISE FIGURE vs. RF FREQUENCY

MAX

1999

4A to

c89

RF FREQUENCY (MHz)

NOIS

E FI

GURE

(dB)

19001800

8

9

10

11

12

13

71700 2000

TC = +25°C

TC = -40°C

TC = +85°C

INPUT IP3 vs. RF FREQUENCY

MAX

1999

4A to

c88

RF FREQUENCY (MHz)

INPU

T IP

3 (d

Bm)

19001800

22

24

26

28

201700 2000

PRF = -5dBm/TONE

VCC = 4.75V

VCC = 5.0V

VCC = 5.25V

Page 18: 双通道、SiGe、高线性度、1200MHz 2000MHz 下变频混频器,带有 · 2010-09-30 · MAX19994A 双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

MA

X199

94A

双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

18

典型工作特性(续)(Typical Application Circuit optimized_for_the_Extended_RF_Band_(see_Table_1). VCC_=_5.0V,_fRF_=_1700MHz_to_2000MHz,_LO_is_low-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)

INPUT P1dB vs. RF FREQUENCYM

AX19

994A

toc1

00

RF FREQUENCY (MHz)

INPU

T P 1

dB (d

Bm)

19001800

12

13

14

15

16

111700 2000

VCC = 5.0V

VCC = 4.75V

VCC = 5.25V

INPUT P1dB vs. RF FREQUENCY

MAX

1999

4A to

c99

RF FREQUENCY (MHz)

INPU

T P 1

dB (d

Bm)

19001800

12

13

14

15

16

111700 2000

PLO = -3dBm, 0dBm, +3dBm

INPUT P1dB vs. RF FREQUENCY

MAX

1999

4A to

c98

RF FREQUENCY (MHz)

INPU

T P 1

dB (d

Bm)

19001800

12

13

14

15

16

111700 2000

TC = +85°C

TC = -40°C

TC = +25°C

3RF - 3LO RESPONSE vs. RF FREQUENCY

MAX

1999

4A to

c97

RF FREQUENCY (MHz)

PRF = -5dBm

3RF

- 3LO

RES

PONS

E (d

Bc)

19001800

65

75

85

95

551700 2000

VCC = 5.0V

VCC = 5.25V

VCC = 4.75V

3RF - 3LO RESPONSE vs. RF FREQUENCYM

AX19

994A

toc9

6

RF FREQUENCY (MHz)

PRF = -5dBm

3RF

- 3LO

RES

PONS

E (d

Bc)

19001800

65

75

85

95

551700 2000

PLO = -3dBm, 0dBm, +3dBm

3RF - 3LO RESPONSE vs. RF FREQUENCY

MAX

1999

4A to

c95

RF FREQUENCY (MHz)

PRF = -5dBm

3RF

- 3LO

RES

PONS

E (d

Bc)

19001800

65

75

85

95

551700 2000

TC = +85°C

TC = +25°C

TC = -40°C

MAX

1999

4A to

c94

RF FREQUENCY (MHz)

PRF = -5dBm

2RF

- 2LO

RES

PONS

E (d

Bc)

1800 1900

60

70

80

501700 2000

VCC = 4.75V, 5.0V, 5.25V

2RF - 2LO RESPONSE vs. RF FREQUENCY

MAX

1999

4A to

c93

RF FREQUENCY (MHz)

PLO = +3dBm

PLO = -3dBm

PLO = 0dBm

PRF = -5dBm

2RF

- 2LO

RES

PONS

E (d

Bc)

1800 1900

60

70

80

501700 2000

2RF - 2LO RESPONSE vs. RF FREQUENCY2RF - 2LO RESPONSE vs. RF FREQUENCY

MAX

1999

4A to

c92

RF FREQUENCY (MHz)

TC = +85°C

TC = +25°C TC = -40°C

PRF = -5dBm

2RF

- 2LO

RES

PONS

E (d

Bc)

1800 1900

60

70

80

501700 2000

Page 19: 双通道、SiGe、高线性度、1200MHz 2000MHz 下变频混频器,带有 · 2010-09-30 · MAX19994A 双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

MA

X19994A

双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关

19

典型工作特性(续)(Typical Application Circuit optimized_for_the_Extended_RF_Band_(see_Table_1). VCC_=_5.0V,_fRF_=_1700MHz_to_2000MHz,_LO_is_low-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)

CHANNEL ISOLATIONvs. RF FREQUENCY

MAX

1999

4A to

c101

RF FREQUENCY (MHz)

CHAN

NEL

ISOL

ATIO

N (d

B)

1800 1900

40

45

50

351700 2000

TC = -40°C, +25°C, +85°C

CHANNEL ISOLATIONvs. RF FREQUENCY

MAX

1999

4A to

c102

RF FREQUENCY (MHz)

CHAN

NEL

ISOL

ATIO

N (d

B)

1800 1900

40

45

50

351700 2000

PLO = -3dBm, 0dBm, +3dBm

CHANNEL ISOLATIONvs. RF FREQUENCY

MAX

1999

4A to

c103

RF FREQUENCY (MHz)

CHAN

NEL

ISOL

ATIO

N (d

B)

1800 1900

40

45

50

351700 2000

VCC = 4.75V, 5.0V, 5.25V

LO LEAKAGE AT IF PORT vs. LO FREQUENCY

MAX

1999

4A to

c104

LO FREQUENCY (MHz)

LO L

EAKA

GE A

T IF

POR

T (d

Bm)

15501450

-35

-30

-25

-20

-15

-10

-401350 1650

TC = -40°C

TC = +25°C

TC = +85°C

LO LEAKAGE AT IF PORT vs. LO FREQUENCY

MAX

1999

4A to

c105

LO FREQUENCY (MHz)

LO L

EAKA

GE A

T IF

POR

T (d

Bm)

15501450

-35

-30

-25

-20

-15

-10

-401350 1650

PLO = +3dBm

PLO = 0dBm

PLO = -3dBm

LO LEAKAGE AT IF PORT vs. LO FREQUENCY

MAX

1999

4A to

c106

LO FREQUENCY (MHz)

LO L

EAKA

GE A

T IF

POR

T (d

Bm)

15501450

-35

-30

-25

-20

-15

-10

-401350 1650

VCC = 4.75V

VCC = 5.0V

VCC = 5.25V

RF-TO-IF ISOLATIONvs. RF FREQUENCY

MAX

1999

4A to

c107

RF FREQUENCY (MHz)

RF-T

O-IF

ISOL

ATIO

N (d

B)

1800 1900

30

40

50

201700 2000

TC = -40°C, +25°C, +85°C

RF-TO-IF ISOLATIONvs. RF FREQUENCY

MAX

1999

4A to

c108

RF FREQUENCY (MHz)

RF-T

O-IF

ISOL

ATIO

N (d

B)

1800 19001700 2000

PLO = -3dBm, 0dBm, +3dBm

30

40

50

20

RF-TO-IF ISOLATIONvs. RF FREQUENCY

MAX

1999

4A to

c109

RF FREQUENCY (MHz)

RF-T

O-IF

ISOL

ATIO

N (d

B)

1800 19001700 2000

VCC = 4.75V, 5.0V, 5.25V

30

40

50

20

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典型工作特性(续)(Typical Application Circuit optimized_for_the_Extended_RF_Band_(see_Table_1). VCC_=_5.0V,_fRF_=_1700MHz_to_2000MHz,_LO_is_low-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)

LO LEAKAGE AT RF PORTvs. LO FREQUENCY

LO FREQUENCY (MHz)

LO L

EAKA

GE A

T RF

POR

T (d

Bm)

1900175016001450

-60

-50

-40

-30

-20

-701300 2050

MAX

1999

4A to

c110

TC = +25°C

TC = +85°C

TC = -40°C

LO LEAKAGE AT RF PORT vs. LO FREQUENCY

MAX

1999

4A to

c111

LO FREQUENCY (MHz)

LO L

EAKA

GE A

T RF

POR

T (d

Bm)

1900175016001450

-60

-50

-40

-30

-20

-701300 2050

PLO = +3dBm

PLO = 0dBm

PLO = -3dBm

LO LEAKAGE AT RF PORT vs. LO FREQUENCY

MAX

1999

4A to

c112

LO FREQUENCY (MHz)

LO L

EAKA

GE A

T RF

POR

T (d

Bm)

1900175016001450

-60

-50

-40

-30

-20

-701300 2050

VCC = 4.75V, 5.0V, 5.25V

2LO LEAKAGE AT RF PORT vs. LO FREQUENCY

MAX

1999

4A to

c113

LO FREQUENCY (MHz)

2LO

LEAK

AGE

AT R

F PO

RT (d

Bm)

1900175016001450

-50

-40

-30

-20

-10

-601300 2050

TC = +85°C

TC = -40°C

TC = +25°C

2LO LEAKAGE AT RF PORTvs. LO FREQUENCY

MAX

1999

4A to

c114

LO FREQUENCY (MHz)

2LO

LEAK

AGE

AT R

F PO

RT (d

Bm)

1900175016001450

-50

-40

-30

-20

-10

-601300 2050

PLO = -3dBm

PLO = 0dBmPLO = +3dBm

2LO LEAKAGE AT RF PORT vs. LO FREQUENCY

MAX

1999

4A to

c115

LO FREQUENCY (MHz)

2LO

LEAK

AGE

AT R

F PO

RT (d

Bm)

1900175016001450

-50

-40

-30

-20

-10

-601300 2050

VCC = 4.75V

VCC = 5.25V

VCC = 5.0V

LO SWITCH ISOLATION vs. LO FREQUENCY

MAX

1999

4A to

c116

LO FREQUENCY (MHz)

LO S

WIT

CH IS

OLAT

ION

(dB)

182516501475

45

55

65

351300 2000

TC = +85°C

TC = +25°C

TC = -40°C

LO SWITCH ISOLATION vs. LO FREQUENCY

MAX

1999

4A to

c117

LO FREQUENCY (MHz)

LO S

WIT

CH IS

OLAT

ION

(dB)

182516501475

45

55

65

351300 2000

PLO = -3dBm, 0dBm, +3dBm

LO SWITCH ISOLATION vs. LO FREQUENCYM

AX19

994A

toc1

18

LO FREQUENCY (MHz)

LO S

WIT

CH IS

OLAT

ION

(dB)

182516501475

45

55

65

351300 2000

VCC = 4.75V, 5.0V, 5.25V

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典型工作特性(续)(Typical Application Circuit optimized_for_the_Extended_RF_Band_(see_Table_1). VCC_=_5.0V,_fRF_=_1700MHz_to_2000MHz,_LO_is_low-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)

RF PORT RETURN LOSSvs. RF FREQUENCY

MAX

1999

4A to

c119

RF FREQUENCY (MHz)

RF P

ORT

RETU

RN L

OSS

(dB)

19001800

25

20

15

10

5

0

IF = 350MHz

301700 2000

PLO = -3dBm, 0dBm, +3dBm

IF PORT RETURN LOSSvs. IF FREQUENCY

MAX

1999

4A to

c120

IF FREQUENCY (MHz)

IF P

ORT

RETU

RN L

OSS

(dB)

410320230140

25

20

15

10

5

0

3050 500

VCC = 4.75V, 5.0V, 5.25V

LO SELECTED PORT RETURN LOSSvs. LO FREQUENCY

MAX

1999

4A to

c121

LO FREQUENCY (MHz)

LO S

ELEC

TED

PORT

RET

URN

LOSS

(dB)

200018001600

30

20

10

0

401400 2200

PLO = -3dBm

PLO = 0dBm

PLO = +3dBm

LO UNSELECTED PORT RETURN LOSSvs. LO FREQUENCY

MAX

1999

4A to

c122

LO FREQUENCY (MHz)

LO U

NSEL

ECTE

D PO

RT R

ETUR

N LO

SS (d

B)

200018001600

30

20

10

0

401400 2200

PLO = -3dBm, 0dBm, +3dBm

SUPPLY CURRENTvs. TEMPERATURE (TC)

MAX

1999

4A to

c123

TEMPERATURE (°C)

SUPP

LY C

URRE

NT (m

A)

603510-15

310

320

330

340

350

360

300-40 85

VCC = 4.75V

VCC = 5.0V

VCC = 5.25V

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22

引脚配置/功能框图

EXPOSED PAD

EXPOSED PAD ON THE BOTTOM OF THE PACKAGE

1 2 3 4 5 6 7 8 9

10

11

12

13

14

15

16

17

18

VCC

IFD_SET

GND

IFD+

IFD-

IND_EXTD

VCC

LO_ADJ_D

N.C.

192021222324252627

LO2

GND

GND

GND

LOSE

L

GND

V CC

GND

LO1

RFM

AIN

TAPM

AIN

GND

V CC

GND

V CC

GND

TAPD

IV

RFDI

V

28

29

30

31

32

33

34

35

36

N.C.

LO_ADJ_M

VCC

IND_EXTM

IFM-

IFM+

GND

IFM_SET

VCC

TQFN(6mm × 6mm)

TOP VIEW

MAX19994A

+

引脚说明

引脚 名称 功能

1 RFMAIN 主通道RF输入。内部匹配为50Ω,需要一个输入隔直电容。

2 TAPMAIN主通道非平衡变压器的中间抽头。使用尽可能靠近该引脚放置的39pF和0.033μF电容旁路至GND,容值较小的电容离器件较近。

3, 5, 7, 12, 20, 22, 24,

25, 26, 34

GND 地。

4, 6, 10, 16, 21, 30, 36

VCC 电源。使用典型应用电路所示电容将其旁路至GND,电容应尽可能靠近引脚放置。

8 TAPDIV分集通道非平衡变压器的中间抽头。使用尽可能靠近该引脚放置的39pF和0.033μF电容旁路至GND,容值较小的电容离器件较近。

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23

引脚说明(续)

详细说明MAX19994A是一款双通道下变频器,设计用于提供8.4dB的转换增益、+25dBm的输入IP3、+14dBm的1dB输入压缩点以及9.8dB的噪声系数。

除具有高线性度性能外,器件还具有非常高的器件集成度。

该器件集成有两个双平衡混频器用于双通道下变频。主通道

和分集通道都包含非平衡变压器和匹配电路,允许50Ω单端连接至RF端口和两个LO端口。集成的单刀双掷(SPDT)开关在两个LO输入之间的切换时间为50ns,具有48dB的LO至LO隔离度,在RF端具有-42dBm的LO泄漏。此外,集成

LO缓冲器可以为各混频器核提供较强的驱动能力,将器件输入端所需的LO驱动减小到-6dBm至+3dBm。两个通道的IF端口配合差分输出进行下变频转换,可有效改善2LO-2RF性能。

器件优化于1450MHz至2050MHzLO频率范围,混频器支持高端和低端LO注入,分别工作在1200MHz至1700MHz和1700MHz至2000MHzRF输入范围。器件还支持50MHz至500MHzIF范围,外部IF器件可设置更低的频率范围(详细信息请参考典型工作特性)。器件也可以工作在上述范围以外,更多信息请参考典型工作特性。

引脚 名称 功能

9 RFDIV 分集通道RF输入。内部匹配为50Ω,需要一个输入隔直电容。

11 IFD_SETIF分集放大器的偏置控制。在该引脚与地之间连接一个电阻来设置分集IF放大器的偏置电流(参见典型应用电路)。

13, 14 IFD+, IFD- 分集混频器差分IF输出+/-。各引脚均需通过上拉电感连接至VCC(参见典型应用电路)。

15 IND_EXTD外部分集电感连接端。该引脚接地,也可以在该引脚与地之间连接一个低ESR的10nH电感,以提高RF与IF之间和LO与IF之间的隔离度(参见典型应用电路)。

17 LO_ADJ_DLO分集放大器的偏置控制。在该引脚与地之间连接一个电阻设置分集LO放大器的偏置电流(参见典型应用电路)。

18, 28 N.C. 没有连接,无内部连接。

19 LO1 本振1输入。该输入端在内部匹配为50Ω,需要一个输入隔直电容。

23 LOSEL 本振选择。该引脚为高电平时选择LO1,为低电平时选择LO2。

27 LO2 本振2输入。该输入端在内部匹配为50Ω,需要一个输入隔直电容。

29 LO_ADJ_MLO主放大器的偏置控制。在该引脚与地之间连接一个电阻来设置LO主放大器的偏置电流(参见典型应用电路)。

31 IND_EXTM外部主电感连接端。该引脚接地,也可以在该引脚与地之间连接一个低ESR的10nH电感,以提高RF与IF之间和LO与IF之间的隔离度(参见典型应用电路)。

32, 33 IFM-, IFM+ 主混频器差分IF输出-/+。各引脚均需通过上拉电感连接至VCC(参见典型应用电路)。

35 IFM_SET IF主放大器的偏置控制。在该引脚与地之间连接一个电阻设置IF主放大器的偏置电流(参见典型应用电路)。

— EP裸焊盘。内部连接至GND,使用多个接地过孔将该焊盘焊接到一个PCB焊盘,为器件与PCB地层之间提供良好的散热通道。多个接地过孔还有助于改善RF性能。

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尽管该器件针对1450MHz至2050MHzLO频率范围进行优化,但它同样可以工作在更低的LO频率,支持1200MHz至1700MHz低端LO注入。然而,随着fLO频率的降低,性能有所下降。如需改善低端LO注入的性能,请与工厂联系。

RF端口和非平衡变压器当器件工作在1200MHz至1700MHzRF频率范围时,主通道和分集通道的RF输入端均在内部匹配为50Ω,无需外部匹配元件。输入端通过片上非平衡变压器内部直流短接到地,

因此需要隔直流电容。在整个1200MHz至1700MHz的RF频率范围内,RF端口的输入回波损耗典型值优于15dB。

还可以对器件的RF输入进行匹配,增加两个额外的4.7nH并联电感,使其工作在1700MHz至2000MHz更宽的RF频率范围,详细信息请参考表1。

LO输入、缓冲器和非平衡变压器器件针对1450MHz至2050MHz的LO频率范围进行了优化。作为一个附加功能,器件包括一个内部LOSPDT开关,可以用于跳频设计。该开关选择两个单端LO端口中的一个,允许外部振荡器在接入之前稳定在一个特定频率上。典型

LO切换时间为50ns,远远超过典型GSM应用的要求。如果不使用跳频功能,可以简单地将开关置于任意一个LO输入端。该开关由数字输入(LOSEL)控制:逻辑高电平时选择LO1;逻辑低电平时选择LO2。LO1和LO2输入端在内部匹配为50Ω,只需一个39pF的隔直电容。

LOSEL直接连接到逻辑源,为了避免损坏器件,VCC必须在LOSEL加载数字逻辑电平之前上电。对于在VCC之前加载LOSEL信号的应用,可在LOSEL端串联一个1kΩ的电阻来限制输入电流。

主通道和分集通道采用两级LO缓冲器,允许使用宽输入功率范围的LO驱动。片上低损耗非平衡变压器和LO缓冲器配合使用,驱动双平衡混频器。LO输入端与IF输出端之间的所有接口和匹配元件均已集成在芯片上。

高线性度混频器

MAX19994A双通道下变频器的核心由两个双平衡、高性能无源混频器组成。片上LO缓冲器具有较大的LO摆幅,可提供优异的线性度指标。与集成IF放大器配合使用时,级联后的IIP3、2LO-2RF抑制和噪声系数的典型值分别为+25dBm、68dBc和9.8dB。

差分IF器件具有50MHz至500MHz的IF频率范围,其低端频率取决于外部IF元件的频率响应。注意:这些差分端口可以改善IIP2性能。单端IF应用需要一个4:1(阻抗比)的非平衡变压器将200Ω的差分IF阻抗转换为50Ω单端输出。经过非平衡变压器之后,回波损耗的典型值为13dB。用户可以在混频器的IF端口使用差分IF放大器,但是IFD+/IFD-和IFM+/IFM-端口均需要隔直,以防止外部直流进入混频器的IF端口。

应用信息

输入和输出匹配

RF和LO输入端在内部匹配为50Ω,工作在1200MHz至1700MHz和1450MHz至2050MHz频率范围。工作在这两个频段时无需匹配元件。在整个1200MHz至1700MHz的RF频率范围内,RF端口的输入回波损耗典型值优于15dB;而在整个LO范围内,LO端口的回波损耗典型值优于15dB。RF和LO输入端只需通过隔直电容连接。

如果器件工作在1700MHz至2000MHz扩展RF频段,只需将隔直流电容更改为1.8pF,并在每个RF端口增加一个4.7nH的并联电感,详细信息请参考表1。更换上述元件后,在1700MHz至2000MHz频率范围内,RF端口的输入回波损耗典型值优于14dB。

IF输出阻抗为200Ω(差分)。为方便评估,通过外部低损耗4:1(阻抗比)非平衡变压器将该阻抗转化成50Ω单端输出(参见典型应用电路)。

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表1. 元件值

降低功耗模式

器件的每个通道均具有两个引脚(LO_ADJ__、IF__SET),允许通过外部电阻设置内部偏置电流。电阻的标称值如表1所示。增大电阻值可降低功耗,但代价是性能有所下降。

如果没有±1%精度的电阻,可以采用±5%的电阻替代。

选择3.3V为混频器供电也可以显著降低功耗,这种方式可以将整体功耗降低约47%,具体细节请参考3.3VSupplyACElectricalCharacteristics表和典型工作特性中与3.3V供电相关的特性曲线。

IND_EXT_电感在需要改善RF与IF之间和LO与IF之间隔离度的应用中,可以在IND_EXT_(引脚15和31)与地之间连接一个低ESR电感。如果不需要很高的隔离度,可以用一个0Ω电阻将IND_EXT_连接至地。

布局考虑

合理的PCB设计是任何RF/微波电路的一个重要部分。RF信号线应尽可能短,以减小损耗、辐射和电感。连接至混频器

的负载阻抗必须保证IF_-和IF_+与地之间的电容不会超过

几个皮法。为获得最佳性能,接地引脚须直接与封装底部的

裸焊盘连接。PCB上的裸焊盘必须连接至PCB的地层。建议采用多个过孔将该焊盘连接至地层。这种方法能为器件提供

一个良好的RF/散热路径。将器件封装底部的裸焊盘焊接至PCB。电路板布局请参考MAX19994A评估板,Gerber文件可从china.maxim-ic.com申请。

电源旁路

合理的电源旁路对高频电路的稳定性至关重要。如典型应用

电路所示,对各VCC引脚和TAPMAIN/TAPDIV引脚使用电容旁路(元件值如表1所示)。将TAPMAIN/TAPDIV的对地旁路电容放置在距相应引脚100mil以内的位置。

裸焊盘的RF/散热考虑MAX19994A采用36引脚薄型QFN-EP封装,其裸焊盘(EP)提供了一个与管芯之间的低热阻通路。在安装器件的PCB与EP之间保持良好的热传递通道非常重要。此外,EP应通过一个低电感路径接地。EP必须直接或通过一系列电镀过孔焊接至PCB的地层。

DESIGNATION QTY DESCRIPTION COMPONENT_SUPPLIER

C1, C8 239pF microwave capacitors (0402)1.8pF for Extended RF Band applications (fRF = 1.7GHz to 2GHz)

Murata Electronics North America, Inc.

C2, C7, C14, C16 4 39pF microwave capacitors (0402) Murata Electronics North America, Inc.

C3, C6 2 0.033FF microwave capacitors (0603) Murata Electronics North America, Inc.

C4, C5 2 Not used —

C9, C13, C15, C17, C18

5 0.01FF microwave capacitors (0402) Murata Electronics North America, Inc.

C10, C11, C12, C19, C20, C21

6 150pF microwave capacitors (0603) Murata Electronics North America, Inc.

L1, L2, L4, L5 4 120nH wire-wound, high-Q inductors (0805) Coilcraft, Inc.

L3, L6 2

10nH wire-wound, high-Q inductors (0603). Smaller values or a 0I resistor can be used at the expense of some LO leakage at the IF port and RF-to-IF isolation performance loss.

Coilcraft, Inc.

L7, L8 24.7nH inductor (0603). Installed for Extended RF Band applications only (1.7GHz to 2GHz).

TOKO America, Inc.

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表1. 元件值(续)

典型应用电路

VCC

IFD_SET

GND

IFD+

IFD-

IND_EXTD

VCC

LO_ADJ_D

N.C.

LO2

GND

GND

GND

LOSE

L

GND

V CC

GND

LO1

RFM

AIN

TAPM

AIN

GND

V CC

GND

V CC

GND

TAPD

IV

RFDI

V

N.C.

LO_ADJ_M

VCC

IND_EXTM

IFM-

IFM+

GND

IFM_SET

VCC

VCC

VCC

VCC

VCC

VCCVCC

VCC

VCC

L7 L8

C2

C3 C4 C5 C6

C9C18

4:1T2T14:1

R4R1

L4L5L2L1

L6L3

C12 C10C11C21 C20C19

C13C17

C14C16

C15

R6R3

R5R2

C7

C8

RF MAIN INPUT RF DIV INPUT

IF DIV OUTPUTIF MAIN OUTPUT

LO1LO2 LO SELECT

C1

VCC

EXPOSED PAD

1 2 3 4 5 6 7 8 9

10

11

12

13

14

15

16

17

18

192021222324252627

28

29

30

31

32

33

34

35

36

MAX19994A

+

DESIGNATION QTY DESCRIPTION COMPONENT_SUPPLIER

R1, R4 2

681I ±1% resistors (0402). Used for VCC_=_5.0V applications. Larger values can be used to reduce power at the expense of some performance loss. Digi-Key Corp.

681I ±1% resistors (0402). Used for VCC_=_3.3V applications.

R2, R5 2

1.82kI ±1% resistors (0402). Used for VCC_=_5.0V applications. Larger values can be used to reduce power at the expense of some performance loss. Digi-Key Corp.

1.43kI ±1% resistors (0402). Used for VCC_=_3.3V applications.

R3, R6 2 0I resistors (1206) Digi-Key Corp.

T1, T2 2 4:1 transformers (200:50) TC4-1W-17 Mini-Circuits

U1 1 MAX19994A IC (36 TQFN-EP) Maxim Integrated Products, Inc.

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芯片信息PROCESS: SiGe BiCMOS

封装信息如需最近的封装外形信息和焊盘布局,请查询china.maxim-ic.com/packages。请注意,封装编码中的“+”、“#”或“-”仅表示RoHS状态。封装图中可能包含不同的尾缀字符,但封装图只与封装有关,与RoHS状态无关。

封装类型 封装编码 文档编号

36引脚薄型QFN-EP T3666+2 21-0141

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双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关 修订历史

Maxim不对Maxim产品以外的任何电路使用负责,也不提供其专利许可。Maxim保留在任何时间、没有任何通报的前提下修改产品资料和规格的权利。

28_____________________ ________ Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600©2010MaximIntegratedProducts Maxim是MaximIntegratedProducts,Inc.的注册商标。

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修订号 修订日期 说明 修改页

0 4/10 最初版本。 —