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MA
X19994A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
________________________________________________________________ _Maxim Integrated Products_ _ 1
19-5197; Rev 0; 4/10
定购信息
概述MAX19994A双通道、下变频混频器可为1200MHz至2000MHz分集接收机应用提供8.4dB转换增益、+25dBm输入IP3、+14dBm输入1dB压缩点以及9.8dB噪声系数。该混频器针对1450MHz至2050MHzLO频率范围进行优化,支持1200MHz至1700MHz和1700MHz至2000MHzRF频率范围的高端和低端LO注入架构。
除具有优异的线性度和噪声指标外,该器件还具有非常高
的元件集成度。器件包括两个双平衡无源混频器核、两个
LO缓冲器、一个双输入LO选择开关以及一对差分IF输出放大器。片内集成非平衡变压器使器件能够接收单端RF和LO输入。MAX19994A需要一个标称为0dBm的LO驱动,电源电流在VCC=5.0V时的典型值为330mA、VCC=3.3V时的典型值为264mA。
MAX19994A与MAX9985/MAX9995/MAX19985A/MAX19993/MAX19995/MAX19995A系列700MHz至2500MHz混频器引脚兼容,与MAX19997A/MAX19999系列1850MHz至4000MHz混频器引脚相似,这使得该系列下变频混频器非常适合多个频段采用相同PCB布局的应用。
器件采用带裸焊盘的6mmx6mm、36引脚薄型QFN封装。在扩展级温度范围(TC=-40°C至+85°C)内确保电气性能。
应用WCDMA/LTE基站
TD-SCDMA基站
GSM/EDGE基站
cdma2000®基站
无线本地环路
固定宽带无线接入
个人移动无线装置
军用系统
特性S 1200MHz至2000MHz RF频率范围
S 1450MHz至2050MHz LO频率范围
S 50MHz至500MHz IF频率范围
S 8.4dB (典型值)转换增益
S 9.8dB (典型值)噪声系数
S +25dBm (典型值)输入IP3
S +14dBm (典型值)输入1dB压缩点
S PRF = -10dBm时,具有68dBc (典型值)的2LO - 2RF杂散抑制
S 双通道理想用于分集接收机应用
S 47dB (典型值)通道间隔离
S -6dBm至+3dBm的低LO驱动
S 集成LO缓冲器
S 内部RF和LO非平衡变压器支持单端输入
S 内置SPDT LO开关,LO-LO隔离度为48dB,开关时间为50ns
S 引脚兼容于MAX9985/MAX9995/MAX19985A/MAX19993/MAX19995/MAX19995A系列700MHz至2200MHz混频器
S 引脚相似于MAX19997A/MAX19999系列1850MHz至4000MHz混频器
S 5.0V或3.3V单电源供电
S 外部电流设置电阻允许折中选择混频器的低功耗/低性能工作模式
cdma2000是电信工业协会的注册商标。
+表示无铅(Pb)/符合RoHS标准的封装。*EP=裸焊盘。T=卷带包装。
本文是英文数据资料的译文,文中可能存在翻译上的不准确或错误。如需进一步确认,请在您的设计中参考英文资料。
有关价格、供货及订购信息,请联络Maxim亚洲销售中心:10800 852 1249 (北中国区),10800 152 1249 (南中国区),或访问Maxim的中文网站:china.maxim-ic.com。
PART TEMP_RANGE PIN-PACKAGE
MAX19994AETX+ -40NC to +85NC 36 Thin QFN-EP*
MAX19994AETX+T -40NC to +85NC 36 Thin QFN-EP*
MA
X199
94A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
2
RECOMMENDED_AC_OPERATING_CONDITIONS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
VCC to GND ..........................................................-0.3V to +5.5VLO1, LO2 to GND .................................................-0.3V to +0.3VLOSEL to GND .........................................-0.3V to (VCC + 0.3V)RFMAIN, RFDIV, and LO_ Input Power ........................+15dBmRFMAIN, RFDIV Current (RF is DC shorted to GND through a balun) ...................50mAContinuous Power Dissipation (Note 1) ..............................8.7WBJA (Notes 1, 3) ............................................................ +38NC/W
BJC (Notes 2, 3) ..............................................................7.4NC/WOperating Case Temperature Range (Note 4) ................................................. -40NC to +85NCJunction Temperature .....................................................+150NCStorage Temperature Range ............................ -65NC to +150NCLead Temperature (soldering, 10s) ................................+300NCSoldering Temperature (reflow) ......................................+260NC
5.0V_SUPPLY_DC_ELECTRICAL_CHARACTERISTICS(Typical Application Circuit, VCC = 4.75V to 5.25V, no input AC signals. TC = -40NC to +85NC, R1 = R4 = 681I, R2 = R5 = 1.82kI. Typical values are at VCC = 5.0V, TC = +25NC, unless otherwise noted. All parameters are production tested.)
3.3V_SUPPLY_DC_ELECTRICAL_CHARACTERISTICS(Typical Application Circuit, VCC = 3.0V to 3.6V, no input AC signals. TC = -40NC to +85NC, R1 = R4 = 681I, R2 = R5 = 1.43kI. Typical values are at VCC = 3.3V, TC = +25NC, unless otherwise noted.)
ABSOLUTE_MAXIMUM_RATINGS
Note_1: Junction temperature TJ = TA + (BJA x VCC x ICC). This formula can be used when the ambient temperature of the PCB is known. The junction temperature must not exceed +150NC.
Note_2: Based on junction temperature TJ = TC + (BJC x VCC x ICC). This formula can be used when the temperature of the exposed pad is known while the device is soldered down to a PCB. See the Applications Information section for details. The junction temperature must not exceed +150NC.
Note_3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to china.maxim-ic.com/thermal-tutorial.
Note_4: TC is the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Voltage VCC 4.75 5 5.25 V
Supply Current ICC Total supply current 330 420 mA
LOSEL Input High Voltage VIH 2 V
LOSEL Input Low Voltage VIL 0.8 V
LOSEL Input Current IIH and IIL -10 +10 FA
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
RF Frequency fRFC1 = C8 = 39pF (Note 5) 1200 1700
MHzC1 = C8 = 1.8pF, L7 = L8 = 4.7nH (Note 5) 1700 2000
LO Frequency fLO (Note 5) 1450 2050 MHz
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Voltage VCC 3.0 3.3 3.6 V
Supply Current ICC Total supply current 264 mA
LOSEL Input High Voltage VIH 2 V
LOSEL Input Low Voltage VIL 0.8 V
MA
X19994A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
3
5.0V_SUPPLY,_HIGH-SIDE_INJECTION_AC_ELECTRICAL_CHARACTERISTICS(Typical Application Circuit optimized for the Standard_RF_Band (see_Table_1). R1 = R4 = 681I, R2 = R5 = 1.82kI, VCC = 4.75V to 5.25V, RF and LO ports are driven from 50I sources, PLO = -6dBm to +3dBm, PRF = -5dBm, fRF = 1200MHz to 1700MHz, fLO = 1550MHz to 2050MHz, fIF = 350MHz, fRF < fLO, TC = -40NC to +85NC. Typical values are at VCC = 5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1450MHz, fLO = 1800MHz, fIF = 350MHz, TC = +25NC. All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)
RECOMMENDED_AC_OPERATING_CONDITIONS_(continued)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Conversion Gain GC
6.2 8.4 9.8
dBTC = +25NC (Note 7) 7.0 8.4 9.0
TC = +25NC, fRF = 1427MHz to 1463MHz (Note 7)
7.9 8.4 8.9
Conversion Gain Flatness DGC fRF = 1427MHz to 1463MHz Q0.05 dB
Gain Variation Over Temperature TCCG TC = -40NC to +85NC -0.01 dB/NC
Input Compression Point IP1dB fRF = 1450MHz (Notes 7, 8) 12.6 14.0 dBm
Input Third-Order Intercept Point IIP3
fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone 21.5 25.0
dBm
fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone, fRF = 1427MHz to 1463MHz, TC = +25NC (Note 7)
23.0 25.0
fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone, fRF = 1427MHz to 1463MHz
22 25.0
Input Third-Order Intercept Point Variation Over Temperature
TCIIP3fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone, TC = -40NC to +85NC
Q0.75 dBm
Noise Figure (Note 9) NFSSB
Single sideband, no blockers present 9.8 13
dB
fRF = 1427MHz to 1463MHz, TC = +25NC, PLO = 0dBm, single sideband, no blockers present
9.8 11
fRF = 1427MHz to 1463MHz, PLO = 0dBm, single sideband, no blockers present
9.8 12.5
Noise Figure Temperature Coefficient
TCNFSingle sideband, no blockers present, TC = -40NC to +85NC
0.016 dB/NC
Noise Figure with Blocker NFB
PBLOCKER = +8dBm, fRF = 1450MHz, fLO = 1800MHz, fBLOCKER = 1350MHz, PLO = 0dBm, VCC = 5.0V, TC = +25NC (Notes 9, 10)
20.2 22 dB
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
IF Frequency fIF
Using Mini-Circuits TC4-1W-17 4:1 trans-former as defined in the Typical Application Circuit, IF matching components affect the IF frequency range (Note 5)
100 500
MHzUsing alternative Mini-Circuits TC4-1W-7A 4:1 transformer as defined in the Typical Application Circuit, IF matching components affect the IF frequency range (Note 5)
50 250
LO Drive Level PLO (Note 5) -6 +3 dBm
MA
X199
94A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
4
5.0V_SUPPLY,_HIGH-SIDE_INJECTION_AC_ELECTRICAL_CHARACTERISTICS_(continued)(Typical Application Circuit optimized for the Standard_RF_Band_(see_Table_1). R1 = R4 = 681I, R2 = R5 = 1.82kI, VCC = 4.75V to 5.25V, RF and LO ports are driven from 50I sources, PLO = -6dBm to +3dBm, PRF = -5dBm, fRF = 1200MHz to 1700MHz, fLO = 1550MHz to 2050MHz, fIF = 350MHz, fRF < fLO, TC = -40NC to +85NC. Typical values are at VCC = 5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1450MHz, fLO = 1800MHz, fIF = 350MHz, TC = +25NC. All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
2LO - 2RF Spur Rejection (Note 9) 2 x 2
fRF = 1450MHz, fLO = 1800MHz, fSPUR = 1625MHz
PRF = -10dBm 57 68
dBc
PRF = -5dBm 52 63
fRF = 1450MHz, fLO = 1800MHz, fSPUR = 1625MHz, PLO = 0dBm, VCC = 5.0V, TC = +25NC
PRF = -10dBm 58 68
PRF = -5dBm 53 63
3LO - 3RF Spur Rejection (Note 9) 3 x 3
fRF = 1450MHz, fLO = 1800MHz, fSPUR = 1683.33MHz
PRF = -10dBm 68 84
dBc
PRF = -5dBm 58 74
fRF = 1450MHz, fLO = 1800MHz, fSPUR = 1683.33MHz, PLO = 0dBm, VCC = 5.0V, TC = +25NC
PRF = -10dBm 70 84
PRF = -5dBm 60 74
RF Input Return LossLO and IF terminated into matched impedance, LO “on”
17 dB
LO Input Return Loss
LO port selected, RF and IF terminated into matched impedance
16
dBLO port unselected, RF and IF terminated into matched impedance
20
IF Output Impedance ZIFNominal differential impedance of the IF outputs
200 I
IF Output Return Loss
RF terminated into 50I, LO driven by 50I source, IF transformed to 50I using external components shown in the Typical Application Circuit
13.0 dB
RF-to-IF Isolation (Note 7) 19 30 dB
LO Leakage at RF Port (Note 7) -42 dBm
2LO Leakage at RF Port (Note 7) -30 dBm
LO Leakage at IF Port (Note 7) -35 dBm
Channel Isolation (Note 7)
RFMAIN converted power measured at IFDIV relative to IFMAIN, all unused ports terminated to 50I
43 47
dBRFDIV converted power measured at IFMAIN relative to IFDIV, all unused ports terminated to 50I
43 47
LO-to-LO IsolationPLO1 = +3dBm, PLO2 = +3dBm, fLO1 = 1800MHz, fLO2 = 1801MHz (Note 7)
42 48 dB
LO Switching Time 50% of LOSEL to IF settled within 2 degrees 50 ns
MA
X19994A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
5
3.3V_SUPPLY,_HIGH-SIDE_INJECTION_AC_ELECTRICAL_CHARACTERISTICS(Typical Application Circuit optimized_ for_ the_Standard_RF_Band_ (see_Table_1). R1 = R4 = 681I, R2 = R5 = 1.43kI. Typical values are at VCC = 3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 1450MHz, fLO = 1800MHz, fIF = 350MHz, TC = +25NC, unless otherwise noted.) (Note 6)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Conversion Gain GC (Note 7) 8.2 dB
Conversion Gain Flatness DGC fRF = 1427MHz to 1463MHz ±0.05 dB
Gain Variation Over Temperature TCCG TC = -40NC to +85NC -0.01 dB/NC
Input Compression Point IP1dB (Note 8) 10.6 dBm
Input Third-Order Intercept Point IIP3 fRF1 - fRF2 = 1MHz 23.6 dBm
Input Third-Order Intercept Point Variation Over Temperature
TCIIP3fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone, TC = -40NC to +85NC
±0.5 dBm
Noise Figure NFSSB Single sideband, no blockers present 9.8 dB
Noise Figure Temperature Coefficient TCNFSingle sideband, no blockers present, TC = -40NC to +85NC
0.016 dB/NC
2LO - 2RF Spur Rejection 2 x 2PRF = -10dBm 68
dBcPRF = -5dBm 63
3LO - 3RF Spur Rejection 3 x 3PRF = -10dBm 77
dBcPRF = -5dBm 67
RF Input Return LossLO and IF terminated into matched impedance, LO “on”
15 dB
LO Input Return Loss
LO port selected, RF and IF terminated into matched impedance
18
dBLO port unselected, RF and IF terminated into matched impedance
21
IF Output Return Loss
RF terminated into 50I, LO driven by 50I source, IF transformed to 50I using external components shown in the Typical Application Circuit
12.5 dB
RF-to-IF Isolation 31 dB
LO Leakage at RF Port -49 dBm
2LO Leakage at RF Port -40 dBm
LO Leakage at IF Port -35 dBm
Channel Isolation
RFMAIN converted power measured at IFDIV relative to IFMAIN, all unused ports terminated to 50I
48
dBRFDIV converted power measured at IFMAIN relative to IFDIV, all unused ports terminated to 50I
48
LO-to-LO IsolationPLO1 = +3dBm, PLO2 = +3dBm, fLO1 = 1800MHz, fLO2 = 1801MHz
50 dB
LO Switching Time 50% of LOSEL to IF settled within 2 degrees 50 ns
MA
X199
94A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
6
5.0V_SUPPLY,_LOW-SIDE_INJECTION_AC_ELECTRICAL_CHARACTERISTICS(Typical Application Circuit optimized_ for_ the_Extended_RF_Band_ (see_Table_1), R1 = R4 = 681I, R2 = R5 = 1.82kI. Typical values are at VCC = 5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1850MHz, fLO = 1500MHz, fIF = 350MHz, TC = +25NC, unless otherwise noted.) (Note 6)
Note_5: Not production tested. Operation outside this range is possible, but with degraded performance of some parameters. See the Typical Operating Characteristics.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Conversion Gain GC 7.9 dB
Conversion Gain Flatness DGCfRF = 1700MHz to 2000MHz, over any 100MHz band
Q0.06 dB
Gain Variation Over Temperature TCCG TC = -40NC to +85NC -0.007 dB/NC
Input Compression Point IP1dB (Note 8) 13.9 dBm
Input Third-Order Intercept Point IIP3 fRF1 - fRF2 = 1MHz 24.9 dBm
Input Third-Order Intercept Point Variation Over Temperature
TCIIP3fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone,TC = -40NC to +85NC
Q0.6 dBm
Noise Figure NFSSB Single sideband, no blockers present 10.2 dB
Noise Figure Temperature Coefficient TCNFSingle sideband, no blockers present, TC = -40NC to +85NC
0.017 dB/NC
2RF - 2LO Spur Rejection 2 x 2PRF = -10dBm 68
dBcPRF = -5dBm 63
3RF - 3LO Spur Rejection 3 x 3PRF = -10dBm 87
dBcPRF = -5dBm 77
RF Input Return LossLO and IF terminated into matched impedance, LO “on”
14 dB
LO Input Return Loss
LO port selected, RF and IF terminated into matched impedance
29
dBLO port unselected, RF and IF terminated into matched impedance
28
IF Output Return Loss
RF terminated into 50I, LO driven by 50I source, IF transformed to 50I using external components shown in the Typical Application Circuit
14.5 dB
RF-to-IF Isolation 37 dB
LO Leakage at RF Port -52 dBm
2LO Leakage at RF Port -29 dBm
LO Leakage at IF Port -19.4 dBm
Channel Isolation
RFMAIN converted power measured at IFDIV relative to IFMAIN, all unused ports terminated to 50I
43
dBRFDIV converted power measured at IFMAIN relative to IFDIV, all unused ports terminated to 50I
43
LO-to-LO IsolationPLO1 = +3dBm, PLO2 = +3dBm, fLO1 = 1500MHz, fLO2 = 1501MHz
54 dB
LO Switching Time 50% of LOSEL to IF settled within 2 degrees 50 ns
MA
X19994A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
7
Note_6: All limits reflect losses of external components, including a 0.8dB loss at fIF = 350MHz due to the 4:1 transformer. Output measurements were taken at IF outputs of the Typical Application Circuit.
Note_7: 100% production tested for functionality.Note_8: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50I source.Note_9: Not production tested.Note_10: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects
of all SNR degradations in the mixer, including the LO noise, as defined in Application Note 2021: Specifications and Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
典型工作特性(Typical Application Circuit optimized_for_the_Standard_RF_Band_(see_Table_1). VCC_=_5.0V,_fRF_=_1200MHz_to_1700MHz,_LO_is_high-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
CONVERSION GAIN vs. RF FREQUENCY
MAX
1999
4A to
c01
RF FREQUENCY (MHz)
CONV
ERSI
ON G
AIN
(dB)
1600150014001300
7
8
9
10
61200 1700
TC = +85°C
TC = -40°C
TC = +25°C
CONVERSION GAIN vs. RF FREQUENCY
MAX
1999
4A to
c02
RF FREQUENCY (MHz)
CONV
ERSI
ON G
AIN
(dB)
1600150014001300
7
8
9
10
61200 1700
PLO = -6dBm, -3dBm, 0dBm, +3dBm
RF FREQUENCY (MHz)
CONV
ERSI
ON G
AIN
(dB)
1600150014001300
7
8
9
10
61200 1700
CONVERSION GAIN vs. RF FREQUENCY
MAX
1999
4A to
c03
VCC = 4.75V, 5.0V, 5.25V
INPUT IP3 vs. RF FREQUENCY
MAX
1999
4A to
c04
RF FREQUENCY (MHz)
INPU
T IP
3 (d
Bm)
1600150014001300
23
24
25
26
27
221200 1700
TC = +25°C
TC = +85°C
TC = -40°C
PRF = -5dBm/TONE
INPUT IP3 vs. RF FREQUENCY
MAX
1999
4A to
c05
RF FREQUENCY (MHz)
INPU
T IP
3 (d
Bm)
1600150014001300
23
24
25
26
27
221200 1700
PLO = -3dBm
PLO = +3dBm PLO = 0dBm
PLO = -6dBm
PRF = -5dBm/TONE
INPUT IP3 vs. RF FREQUENCY
MAX
1999
4A to
c06
RF FREQUENCY (MHz)
INPU
T IP
3 (d
Bm)
1600150014001300
23
24
25
26
27
221200 1700
VCC = 5.0V
VCC = 5.25V
VCC = 4.75V
PRF = -5dBm/TONE
MA
X199
94A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
8
典型工作特性(续)(Typical Application Circuit optimized_for_the_Standard_RF_Band_(see_Table_1). VCC_=_5.0V,_fRF_=_1200MHz_to_1700MHz,_LO_is_high-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
NOISE FIGURE vs. RF FREQUENCY
MAX
1999
4A to
c07
RF FREQUENCY (MHz)
NOIS
E FI
GURE
(dB)
1600150014001300
7
8
9
10
11
12
61200 1700
TC = -40°C
TC = +85°C
TC = +25°C
NOISE FIGURE vs. RF FREQUENCY
MAX
1999
4A to
c08
RF FREQUENCY (MHz)
NOIS
E FI
GURE
(dB)
1600150014001300
7
8
9
10
11
12
61200 1700
PLO = -6dBm, -3dBm, 0dBm, +3dBm
NOISE FIGURE vs. RF FREQUENCY
MAX
1999
4A to
c09
RF FREQUENCY (MHz)
NOIS
E FI
GURE
(dB)
1600150014001300
7
8
9
10
11
12
61200 1700
VCC = 4.75V, 5.0V, 5.25V
2LO - 2RF RESPONSE vs. RF FREQUENCY
MAX
1999
4A to
c10
RF FREQUENCY (MHz)
2LO
- 2RF
RES
PONS
E (d
Bc)
1600150014001300
60
70
80
501200 1700
TC = -40°C
TC = +85°C
PRF = -5dBm
TC = +25°C
2LO - 2RF RESPONSE vs. RF FREQUENCYM
AX19
994A
toc1
1
RF FREQUENCY (MHz)
2LO
- 2RF
RES
PONS
E (d
Bc)
1600150014001300
60
70
80
501200 1700
PLO = -3dBm
PRF = -5dBm
PLO = -6dBm
PLO = +3dBm PLO = 0dBm
2LO - 2RF RESPONSE vs. RF FREQUENCY
MAX
1999
4A to
c12
RF FREQUENCY (MHz)
2LO
- 2RF
RES
PONS
E (d
Bc)
1600150014001300
60
70
80
501200 1700
PRF = -5dBm
VCC = 4.75V, 5.0V, 5.25V
3LO - 3RF RESPONSE vs. RF FREQUENCY
MAX
1999
4A to
c13
RF FREQUENCY (MHz)
3LO
- 3RF
RES
PONS
E (d
Bc)
1600150014001300
65
75
85
95
551200 1700
TC = +85°C
TC = +25°C
TC = -40°C
PRF = -5dBm
3LO - 3RF RESPONSE vs. RF FREQUENCY
MAX
1999
4A to
c14
RF FREQUENCY (MHz)
3LO
- 3RF
RES
PONS
E (d
Bc)
1600150014001300
65
75
85
95
551200 1700
PLO = -3dBm, 0dBm, +3dBm
PRF = -5dBm
PLO = -6dBm
3LO - 3RF RESPONSE vs. RF FREQUENCYM
AX19
994A
toc1
5
RF FREQUENCY (MHz)
3LO
- 3RF
RES
PONS
E (d
Bc)
1600150014001300
65
75
85
95
551200 1700
VCC = 5.0V
VCC = 5.25V
PRF = -5dBm
VCC = 4.75V
MA
X19994A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
9
典型工作特性(续)(Typical Application Circuit optimized_for_the_Standard_RF_Band_(see_Table_1). VCC_=_5.0V,_fRF_=_1200MHz_to_1700MHz,_LO_is_high-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
INPUT P1dB vs. RF FREQUENCY
MAX
1999
4A to
c16
RF FREQUENCY (MHz)
INPU
T P 1
dB (d
Bm)
1600150014001300
12
13
14
15
16
111200 1700
TC = +85°C
TC = +25°C
TC = -40°C
INPUT P1dB vs. RF FREQUENCY
MAX
1999
4A to
c17
RF FREQUENCY (MHz)
INPU
T P 1
dB (d
Bm)
1600150014001300
12
13
14
15
16
111200 1700
PLO = -6dBm, -3dBm, 0dBm, +3dBm
INPUT P1dB vs. RF FREQUENCY
MAX
1999
4A to
c18
RF FREQUENCY (MHz)
INPU
T P 1
dB (d
Bm)
1600150014001300
12
13
14
15
16
111200 1700
VCC = 4.75V
VCC = 5.25V
VCC = 5.0V
CHANNEL ISOLATION vs. RF FREQUENCY
MAX
1999
4A to
c19
RF FREQUENCY (MHz)
CHAN
NEL
ISOL
ATIO
N (d
B)
1600150014001300
35
40
45
50
55
60
301200 1700
TC = -40°C, +25°C, +85°C
CHANNEL ISOLATION vs. RF FREQUENCYM
AX19
994A
toc2
0
RF FREQUENCY (MHz)
CHAN
NEL
ISOL
ATIO
N (d
B)
1600150014001300
35
40
45
50
55
60
301200 1700
PLO = -6dBm, -3dBm, 0dBm, +3dBm
CHANNEL ISOLATION vs. RF FREQUENCY
MAX
1999
4A to
c21
RF FREQUENCY (MHz)
CHAN
NEL
ISOL
ATIO
N (d
B)
1600150014001300
35
40
45
50
55
60
301200 1700
VCC = 4.75V, 5.0V, 5.25V
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX
1999
4A to
c22
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T IF
POR
T (d
Bm)
1950185017501650
-45
-40
-35
-30
-25
-20
-501550 2050
TC = +25°C
TC = -40°C
TC = +85°C
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX
1999
4A to
c23
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T IF
POR
T (d
Bm)
1950185017501650
-45
-40
-35
-30
-25
-20
-501550 2050
PLO = -6dBm
PLO = -3dBm
PLO = 0dBm
PLO = +3dBm
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX
1999
4A to
c24
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T IF
POR
T (d
Bm)
1950185017501650
-45
-40
-35
-30
-25
-20
-501550 2050
VCC = 4.75VVCC = 5.0V
VCC = 5.25V
MA
X199
94A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
10
典型工作特性(续)(Typical Application Circuit optimized_for_the_Standard_RF_Band_(see_Table_1). VCC_=_5.0V,_fRF_=_1200MHz_to_1700MHz,_LO_is_high-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX
1999
4A to
c25
RF FREQUENCY (MHz)
RF-T
O-IF
ISOL
ATIO
N (d
B)
1600150014001300
30
40
50
201200 1700
TC = +25°C
TC = -40°C
TC = +85°C
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX
1999
4A to
c26
RF FREQUENCY (MHz)
RF-T
O-IF
ISOL
ATIO
N (d
B)
1600150014001300
30
40
50
201200 1700
PLO = -6dBm
PLO = -3dBm
PLO = 0dBm
PLO = +3dBm
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX
1999
4A to
c27
RF FREQUENCY (MHz)
RF-T
O-IF
ISOL
ATIO
N (d
B)
1600150014001300
30
40
50
201200 1700
VCC = 4.75V
VCC = 5.0V
VCC = 5.25V
LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1999
4A to
c28
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T RF
POR
T (d
Bm)
200018001600
-60
-50
-40
-30
-20
-701400 2200
TC = +25°C
TC = -40°C
TC = +85°C
LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1999
4A to
c29
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T RF
POR
T (d
Bm)
200018001600
-60
-50
-40
-30
-20
-701400 2200
PLO = -6dBmPLO = -3dBm
PLO = 0dBmPLO = +3dBm
LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1999
4A to
c30
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T RF
POR
T (d
Bm)
200018001600
-60
-50
-40
-30
-20
-701400 2200
VCC = 4.75V, 5.0V, 5.25V
2LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1999
4A to
c31
LO FREQUENCY (MHz)
2LO
LEAK
AGE
AT R
F PO
RT (d
Bm)
200018001600
-50
-40
-30
-20
-10
-601400 2200
TC = +25°C
TC = -40°C
TC = +85°C
PLO = +3dBm
2LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1999
4A to
c32
LO FREQUENCY (MHz)
2LO
LEAK
AGE
AT R
F PO
RT (d
Bm)
200018001600
-50
-40
-30
-20
-10
-601400 2200
PLO = -6dBm
PLO = -3dBm
PLO = 0dBm
2LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1999
4A to
c33
LO FREQUENCY (MHz)
2LO
LEAK
AGE
AT R
F PO
RT (d
Bm)
200018001600
-50
-40
-30
-20
-10
-601400 2200
VCC = 4.75VVCC = 5.0V
VCC = 5.25V
MA
X19994A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
11
典型工作特性(续)(Typical Application Circuit optimized_for_the_Standard_RF_Band_(see_Table_1). VCC_=_5.0V,_fRF_=_1200MHz_to_1700MHz,_LO_is_high-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
LO SWITCH ISOLATIONvs. LO FREQUENCY
MAX
1999
4A to
c34
LO FREQUENCY (MHz)
LO S
WIT
CH IS
OLAT
ION
(dB)
200018001600
45
55
65
351400 2200
TC = +25°C
TC = -40°C
TC = +85°C
LO SWITCH ISOLATIONvs. LO FREQUENCY
MAX
1999
4A to
c35
LO FREQUENCY (MHz)
LO S
WIT
CH IS
OLAT
ION
(dB)
200018001600
45
55
65
351400 2200
PLO = -6dBm, -3dBm, 0dBm, +3dBm
LO SWITCH ISOLATIONvs. LO FREQUENCY
MAX
1999
4A to
c36
LO FREQUENCY (MHz)
LO S
WIT
CH IS
OLAT
ION
(dB)
200018001600
45
55
65
351400 2200
VCC = 4.75V, 5.0V, 5.25V
RF PORT RETURN LOSSvs. RF FREQUENCY
MAX
1999
4A to
c37
RF FREQUENCY (MHz)
RF P
ORT
RETU
RN L
OSS
(dB)
1600150014001300
25
20
15
10
5
0
301200 1700
PLO = -6dBm, -3dBm, 0dBm, +3dBm
IF = 350MHz
IF PORT RETURN LOSS vs. IF FREQUENCYM
AX19
994A
toc3
8
IF FREQUENCY (MHz)
IF P
ORT
RETU
RN L
OSS
(dB)
410320230140
25
20
15
10
5
0
3050 500
VCC = 4.75V, 5.0V, 5.25V
LO = 2050MHz
LO = 1550MHz
LO = 1800MHz
LO SELECTED PORT RETURN LOSSvs. LO FREQUENCY
MAX
1999
4A to
c39
LO FREQUENCY (MHz)
LO S
ELEC
TED
PORT
RET
URN
LOSS
(dB)
200018001600
30
20
10
0
401400 2200
PLO = -6dBm
PLO = -3dBm
PLO = 0dBm
PLO = +3dBm
LO UNSELECTED PORT RETURN LOSSvs. LO FREQUENCY
MAX
1999
4A to
c40
LO FREQUENCY (MHz)
LO U
NSEL
ECTE
D PO
RT R
ETUR
N LO
SS (d
B)
200018001600
30
20
10
0
401400 2200
PLO = -6dBm, -3dBm, 0dBm, +3dBm
SUPPLY CURRENT vs.TEMPERATURE (TC)
MAX
1999
4A to
c41
TEMPERATURE (°C)
SUPP
LY C
URRE
NT (m
A)
603510-15
310
320
330
340
350
360
300-40 85
VCC = 4.75VVCC = 5.0V
VCC = 5.25V
MA
X199
94A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
12
典型工作特性(续)(Typical Application Circuit optimized_for_the_Standard_RF_Band_(see_Table_1). VCC_=_3.3V,_fRF_=_1200MHz_to_1700MHz,_LO_is_high-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
CONVERSION GAIN vs. RF FREQUENCY
MAX
1999
4A to
c43
RF FREQUENCY (MHz)
CONV
ERSI
ON G
AIN
(dB)
1600150014001300
7
8
9
10
61200 1700
VCC = 3.3V
PLO = -6dBm, -3dBm, 0dBm, +3dBm
CONVERSION GAIN vs. RF FREQUENCY
MAX
1999
4A to
c44
RF FREQUENCY (MHz)
CONV
ERSI
ON G
AIN
(dB)
1600150014001300
7
8
9
10
61200 1700
VCC = 3.0V
VCC = 3.3V
VCC = 3.6V
INPUT IP3 vs. RF FREQUENCY
MAX
1999
4A to
c45
RF FREQUENCY (MHz)
INPU
T IP
3 (d
Bm)
1600150014001300
21
22
23
24
25
26
201200 1700
TC = +25°C
TC = -40°C
TC = +85°CVCC = 3.3V
PRF = -5dBm/TONE
INPUT IP3 vs. RF FREQUENCYM
AX19
994A
toc4
6
RF FREQUENCY (MHz)
INPU
T IP
3 (d
Bm)
1600150014001300
21
22
23
24
25
26
201200 1700
VCC = 3.3VPRF = -5dBm/TONE
PLO = -6dBm
PLO = -3dBm
PLO = 0dBmPLO = +3dBm
INPUT IP3 vs. RF FREQUENCY
MAX
1999
4A to
c47
RF FREQUENCY (MHz)
INPU
T IP
3 (d
Bm)
1600150014001300
21
22
23
24
25
26
201200 1700
PRF = -5dBm/TONEVCC = 3.6V
VCC = 3.0V VCC = 3.3V
NOISE FIGURE vs. RF FREQUENCY
MAX
1999
4A to
c48
RF FREQUENCY (MHz)
NOIS
E FI
GURE
(dB)
1600150014001300
8
9
10
11
12
13
71200 1700
VCC = 3.3V
TC = +25°C
TC = -40°C
TC = +85°C
NOISE FIGURE vs. RF FREQUENCY
MAX
1999
4A to
c49
RF FREQUENCY (MHz)
NOIS
E FI
GURE
(dB)
1600150014001300
8
9
10
11
12
13
71200 1700
VCC = 3.3V
PLO = -6dBm, -3dBm, 0dBm, +3dBm
NOISE FIGURE vs. RF FREQUENCYM
AX19
994A
toc5
0
RF FREQUENCY (MHz)
NOIS
E FI
GURE
(dB)
1600150014001300
8
9
10
11
12
13
71200 1700
VCC = 3.0V, 3.3V, 3.6V
CONVERSION GAIN vs. RF FREQUENCY
MAX
1999
4A to
c42
RF FREQUENCY (MHz)
CONV
ERSI
ON G
AIN
(dB)
1600150014001300
7
8
9
10
61200 1700
TC = +25°CTC = +85°C
VCC = 3.3VTC = -40°C
MA
X19994A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
13
典型工作特性(续)(Typical Application Circuit optimized_for_the_Standard_RF_Band_(see_Table_1). VCC_=_3.3V,_fRF_=_1200MHz_to_1700MHz,_LO_is_high-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
2LO - 2RF RESPONSE vs. RF FREQUENCY
MAX
1999
4A to
c51
RF FREQUENCY (MHz)
2LO
- 2RF
RES
PONS
E (d
Bc)
1600150014001300
60
70
80
501200 1700
TC = +25°CTC = -40°C
TC = +85°C
VCC = 3.3VPRF = -5dBm
2LO - 2RF RESPONSE vs. RF FREQUENCY
MAX
1999
4A to
c52
RF FREQUENCY (MHz)
2LO
- 2RF
RES
PONS
E (d
Bc)
1600150014001300
60
70
80
501200 1700
VCC = 3.3VPRF = -5dBm
PLO = -6dBm PLO = -3dBm
PLO = 0dBm
PLO = +3dBm
2LO - 2RF RESPONSE vs. RF FREQUENCY
MAX
1999
4A to
c53
RF FREQUENCY (MHz)
2LO
- 2RF
RES
PONS
E (d
Bc)
1600150014001300
60
70
80
501200 1700
PRF = -5dBm
VCC = 3.0VVCC = 3.3V
VCC = 3.6V
3LO - 3RF RESPONSE vs. RF FREQUENCY
MAX
1999
4A to
c54
RF FREQUENCY (MHz)
3LO
- 3RF
RES
PONS
E (d
Bc)
1600150014001300
55
65
75
85
451200 1700
TC = +25°C
TC = -40°C
TC = +85°C
VCC = 3.3VPRF = -5dBm
3LO - 3RF RESPONSE vs. RF FREQUENCYM
AX19
994A
toc5
5
RF FREQUENCY (MHz)
3LO
- 3RF
RES
PONS
E (d
Bc)
1600150014001300
55
65
75
85
451200 1700
VCC = 3.3VPRF = -5dBm
PLO = -6dBm, -3dBm, 0dBm, +3dBm
3LO - 3RF RESPONSE vs. RF FREQUENCY
MAX
1999
4A to
c56
RF FREQUENCY (MHz)
3LO
- 3RF
RES
PONS
E (d
Bc)
1600150014001300
55
65
75
85
451200 1700
PRF = -5dBm
VCC = 3.0V
VCC = 3.3V
VCC = 3.6V
INPUT P1dB vs. RF FREQUENCY
MAX
1999
4A to
c57
RF FREQUENCY (MHz)
INPU
T P 1
dB (d
Bm)
1600150014001300
9
10
11
12
13
81200 1700
TC = +25°C
TC = -40°C
TC = +85°C
VCC = 3.3V
INPUT P1dB vs. RF FREQUENCY
MAX
1999
4A to
c58
RF FREQUENCY (MHz)
INPU
T P 1
dB (d
Bm)
1600150014001300
9
10
11
12
13
81200 1700
VCC = 3.3V
PLO = -6dBm, -3dBm, 0dBm, +3dBm
INPUT P1dB vs. RF FREQUENCYM
AX19
994A
toc5
9
RF FREQUENCY (MHz)
INPU
T P 1
dB (d
Bm)
1600150014001300
9
10
11
12
13
81200 1700
VCC = 3.6V
VCC = 3.0V
VCC = 3.3V
MA
X199
94A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
14
典型工作特性(续)(Typical Application Circuit optimized_for_the_Standard_RF_Band_(see_Table_1). VCC_=_3.3V,_fRF_=_1200MHz_to_1700MHz,_LO_is_high-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
CHANNEL ISOLATIONvs. RF FREQUENCY
MAX
1999
4A to
c61
RF FREQUENCY (MHz)
CHAN
NEL
ISOL
ATIO
N (d
B)
1600150014001300
35
40
45
50
55
60
301200 1700
PLO = -6dBm, -3dBm, 0dBm, +3dBm
VCC = 3.3V
CHANNEL ISOLATIONvs. RF FREQUENCY
MAX
1999
4A to
c62
RF FREQUENCY (MHz)
CHAN
NEL
ISOL
ATIO
N (d
B)
1600150014001300
35
40
45
50
55
60
301200 1700
VCC = 3.0V, 3.3V, 3.6V
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX
1999
4A to
c63
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T IF
POR
T (d
Bm)
1950185017501650
-45
-40
-35
-30
-25
-20
-501550 2050
TC = +25°C
TC = +85°C
TC = -40°C
VCC = 3.3V
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX
1999
4A to
c64
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T IF
POR
T (d
Bm)
1950185017501650
-45
-40
-35
-30
-25
-20
-501550 2050
PLO = -3dBmPLO = -6dBm
PLO = +3dBm
PLO = 0dBm
VCC = 3.3V
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX
1999
4A to
c65
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T IF
POR
T (d
Bm)
1950185017501650
-45
-40
-35
-30
-25
-20
-501550 2050
VCC = 3.0V
VCC = 3.3V
VCC = 3.6V
RF-TO-IF ISOLATIONvs. RF FREQUENCY
MAX
1999
4A to
c66
RF-T
O-IF
ISOL
ATIO
N (d
B)
30
40
50
20
RF FREQUENCY (MHz)
16001500140013001200 1700
TC = -40°C
TC = +25°C
TC = +85°CVCC = 3.3V
RF-TO-IF ISOLATIONvs. RF FREQUENCY
MAX
1999
4A to
c67
RF-T
O-IF
ISOL
ATIO
N (d
B)
30
40
50
20
RF FREQUENCY (MHz)
16001500140013001200 1700
PLO = -6dBm
PLO = +3dBm
PLO = -3dBm
VCC = 3.3V
PLO = 0dBm
RF-TO-IF ISOLATIONvs. RF FREQUENCY
MAX
1999
4A to
c68
RF-T
O-IF
ISOL
ATIO
N (d
B)
30
40
50
20
RF FREQUENCY (MHz)
16001500140013001200 1700
VCC = 3.6V
VCC = 3.3V
VCC = 3.0V
CHANNEL ISOLATION vs. RF FREQUENCY
MAX
1999
4A to
c60
RF FREQUENCY (MHz)
CHAN
NEL
ISOL
ATIO
N (d
B)
1600150014001300
35
40
45
50
55
60
301200 1700
TC = -40°C, +25°C, +85°C
VCC = 3.3V
MA
X19994A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
15
典型工作特性(续)(Typical Application Circuit optimized_for_the_Standard_RF_Band_(see_Table_1). VCC_=_3.3V,_fRF_=_1200MHz_to_1700MHz,_LO_is_high-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1999
4A to
c69
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T RF
POR
T (d
Bm)
200018001600
-60
-50
-40
-30
-20
-701400 2200
TC = -40°C
TC = +25°C
TC = +85°C
VCC = 3.3V
LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1999
4A to
c70
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T RF
POR
T (d
Bm)
200018001600
-60
-50
-40
-30
-20
-701400 2200
PLO = +3dBm
PLO = 0dBm
PLO = -6dBm
PLO = -3dBm
VCC = 3.3V
LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1999
4A to
c71
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T RF
POR
T (d
Bm)
200018001600
-60
-50
-40
-30
-20
-701400 2200
VCC = 3.6V
VCC = 3.3V
VCC = 3.0V
2LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1999
4A to
c72
LO FREQUENCY (MHz)
2LO
LEAK
AGE
AT R
F PO
RT (d
Bm)
200018001600
-50
-40
-30
-20
-10
-601400 2200
VCC = 3.3V
TC = +85°C
TC = +25°C
TC = -40°C
2LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1999
4A to
c73
LO FREQUENCY (MHz)
2LO
LEAK
AGE
AT R
F PO
RT (d
Bm)
200018001600
-50
-40
-30
-20
-10
-601400 2200
VCC = 3.3V
PLO = +3dBm
PLO = -6dBm
PLO = 0dBm
PLO = -3dBm
2LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1999
4A to
c74
LO FREQUENCY (MHz)
2LO
LEAK
AGE
AT R
F PO
RT (d
Bm)
200018001600
-50
-40
-30
-20
-10
-601400 2200
VCC = 3.6V VCC = 3.3V
VCC = 3.0V
LO S
WIT
CH IS
OLAT
ION
(dB)
45
55
65
35
LO SWITCH ISOLATIONvs. LO FREQUENCY
MAX
1999
4A to
c75
TC = +25°C
TC = +85°C
LO FREQUENCY (MHz)
2000180016001400 2200
TC = -40°C
VCC = 3.3V
LO S
WIT
CH IS
OLAT
ION
(dB)
45
55
65
35
LO SWITCH ISOLATIONvs. LO FREQUENCY
MAX
1999
4A to
c76
LO FREQUENCY (MHz)
2000180016001400 2200
VCC = 3.3V
PLO = -6dBm, -3dBm, 0dBm, +3dBm
LO S
WIT
CH IS
OLAT
ION
(dB)
45
55
65
35
LO SWITCH ISOLATIONvs. LO FREQUENCY
MAX
1999
4A to
c77
LO FREQUENCY (MHz)
2000180016001400 2200
VCC = 3.0V, 3.3V, 3.6V
MA
X199
94A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
16
典型工作特性(续)(Typical Application Circuit optimized_for_the_Standard_RF_Band_(see_Table_1). VCC_=_3.3V,_fRF_=_1200MHz_to_1700MHz,_LO_is_high-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
IF PORT RETURN LOSSvs. IF FREQUENCY
MAX
1999
4A to
c79
IF FREQUENCY (MHz)
IF P
ORT
RETU
RN L
OSS
(dB)
410320230140
25
20
15
10
5
0
3050 500
VCC = 3.3V
LO = 1550MHz
LO = 1800MHz
LO = 2050MHz
LO SELECTED PORT RETURN LOSSvs. LO FREQUENCY
MAX
1999
4A to
c80
LO S
ELEC
TED
PORT
RET
URN
LOSS
(dB)
30
20
10
0
40
LO FREQUENCY (MHz)
2000180016001400 2200
PLO = +3dBm
PLO = 0dBm
PLO = -6dBm
PLO = -3dBm
VCC = 3.3V
LO UNSELECTED PORT RETURN LOSSvs. LO FREQUENCY
MAX
1999
4A to
c81
LO FREQUENCY (MHz)
LO U
NSEL
ECTE
D PO
RT R
ETUR
N LO
SS (d
B)
200018001600
30
20
10
0
401400 2200
PLO = -6dBm, -3dBm, 0dBm, +3dBm
VCC = 3.3V
SUPPLY CURRENTvs. TEMPERATURE (TC)
MAX
1999
4A to
c82
TEMPERATURE (°C)
SUPP
LY C
URRE
NT (m
A)
603510-15
240
260
280
300
220-40 85
VCC = 3.0V
VCC = 3.3V
VCC = 3.6V
RF PORT RETURN LOSSvs. RF FREQUENCY
MAX
1999
4A to
c78
RF FREQUENCY (MHz)
RF P
ORT
RETU
RN L
OSS
(dB)
1600150014001300
25
20
15
10
5
0
301200 1700
PLO = -6dBm, -3dBm, 0dBm, +3dBm
VCC = 3.3VIF = 350MHz
MA
X19994A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
17
典型工作特性(续)(Typical Application Circuit optimized_for_the_Extended_RF_Band_(see_Table_1). VCC_=_5.0V,_fRF_=_1700MHz_to_2000MHz,_LO_is_low-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
INPUT IP3 vs. RF FREQUENCYM
AX19
994A
toc8
7
RF FREQUENCY (MHz)
INPU
T IP
3 (d
Bm)
19001800
22
24
26
28
201700 2000
PRF = -5dBm/TONE
PLO = -3dBm, 0dBm, +3dBm
INPUT IP3 vs. RF FREQUENCY
MAX
1999
4A to
c86
RF FREQUENCY (MHz)
INPU
T IP
3 (d
Bm)
19001800
22
24
26
28
201700 2000
TC = +25°C
TC = -40°C
TC = +85°C
PRF = -5dBm/TONE
CONVERSION GAIN vs. RF FREQUENCY
MAX
1999
4A to
c85
RF FREQUENCY (MHz)
CONV
ERSI
ON G
AIN
(dB)
19001800
7
8
9
10
61700 2000
VCC = 4.75V, 5.0V, 5.25V
CONVERSION GAIN vs. RF FREQUENCY
MAX
1999
4A to
c84
RF FREQUENCY (MHz)
CONV
ERSI
ON G
AIN
(dB)
19001800
7
8
9
10
61700 2000
PLO = -3dBm, 0dBm, +3dBm
CONVERSION GAIN vs. RF FREQUENCY
MAX
1999
4A to
c83
RF FREQUENCY (MHz)
CONV
ERSI
ON G
AIN
(dB)
19001800
7
8
9
10
61700 2000
TC = +25°C
TC = -40°C
TC = +85°C
NOISE FIGURE vs. RF FREQUENCYM
AX19
994A
toc9
1
RF FREQUENCY (MHz)
NOIS
E FI
GURE
(dB)
19001800
8
9
10
11
12
13
71700 2000
VCC = 4.75V, 5.0V, 5.25V
NOISE FIGURE vs. RF FREQUENCY
MAX
1999
4A to
c90
RF FREQUENCY (MHz)
NOIS
E FI
GURE
(dB)
19001800
8
9
10
11
12
13
71700 2000
PLO = -3dBm, 0dBm, +3dBm
NOISE FIGURE vs. RF FREQUENCY
MAX
1999
4A to
c89
RF FREQUENCY (MHz)
NOIS
E FI
GURE
(dB)
19001800
8
9
10
11
12
13
71700 2000
TC = +25°C
TC = -40°C
TC = +85°C
INPUT IP3 vs. RF FREQUENCY
MAX
1999
4A to
c88
RF FREQUENCY (MHz)
INPU
T IP
3 (d
Bm)
19001800
22
24
26
28
201700 2000
PRF = -5dBm/TONE
VCC = 4.75V
VCC = 5.0V
VCC = 5.25V
MA
X199
94A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
18
典型工作特性(续)(Typical Application Circuit optimized_for_the_Extended_RF_Band_(see_Table_1). VCC_=_5.0V,_fRF_=_1700MHz_to_2000MHz,_LO_is_low-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
INPUT P1dB vs. RF FREQUENCYM
AX19
994A
toc1
00
RF FREQUENCY (MHz)
INPU
T P 1
dB (d
Bm)
19001800
12
13
14
15
16
111700 2000
VCC = 5.0V
VCC = 4.75V
VCC = 5.25V
INPUT P1dB vs. RF FREQUENCY
MAX
1999
4A to
c99
RF FREQUENCY (MHz)
INPU
T P 1
dB (d
Bm)
19001800
12
13
14
15
16
111700 2000
PLO = -3dBm, 0dBm, +3dBm
INPUT P1dB vs. RF FREQUENCY
MAX
1999
4A to
c98
RF FREQUENCY (MHz)
INPU
T P 1
dB (d
Bm)
19001800
12
13
14
15
16
111700 2000
TC = +85°C
TC = -40°C
TC = +25°C
3RF - 3LO RESPONSE vs. RF FREQUENCY
MAX
1999
4A to
c97
RF FREQUENCY (MHz)
PRF = -5dBm
3RF
- 3LO
RES
PONS
E (d
Bc)
19001800
65
75
85
95
551700 2000
VCC = 5.0V
VCC = 5.25V
VCC = 4.75V
3RF - 3LO RESPONSE vs. RF FREQUENCYM
AX19
994A
toc9
6
RF FREQUENCY (MHz)
PRF = -5dBm
3RF
- 3LO
RES
PONS
E (d
Bc)
19001800
65
75
85
95
551700 2000
PLO = -3dBm, 0dBm, +3dBm
3RF - 3LO RESPONSE vs. RF FREQUENCY
MAX
1999
4A to
c95
RF FREQUENCY (MHz)
PRF = -5dBm
3RF
- 3LO
RES
PONS
E (d
Bc)
19001800
65
75
85
95
551700 2000
TC = +85°C
TC = +25°C
TC = -40°C
MAX
1999
4A to
c94
RF FREQUENCY (MHz)
PRF = -5dBm
2RF
- 2LO
RES
PONS
E (d
Bc)
1800 1900
60
70
80
501700 2000
VCC = 4.75V, 5.0V, 5.25V
2RF - 2LO RESPONSE vs. RF FREQUENCY
MAX
1999
4A to
c93
RF FREQUENCY (MHz)
PLO = +3dBm
PLO = -3dBm
PLO = 0dBm
PRF = -5dBm
2RF
- 2LO
RES
PONS
E (d
Bc)
1800 1900
60
70
80
501700 2000
2RF - 2LO RESPONSE vs. RF FREQUENCY2RF - 2LO RESPONSE vs. RF FREQUENCY
MAX
1999
4A to
c92
RF FREQUENCY (MHz)
TC = +85°C
TC = +25°C TC = -40°C
PRF = -5dBm
2RF
- 2LO
RES
PONS
E (d
Bc)
1800 1900
60
70
80
501700 2000
MA
X19994A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
19
典型工作特性(续)(Typical Application Circuit optimized_for_the_Extended_RF_Band_(see_Table_1). VCC_=_5.0V,_fRF_=_1700MHz_to_2000MHz,_LO_is_low-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
CHANNEL ISOLATIONvs. RF FREQUENCY
MAX
1999
4A to
c101
RF FREQUENCY (MHz)
CHAN
NEL
ISOL
ATIO
N (d
B)
1800 1900
40
45
50
351700 2000
TC = -40°C, +25°C, +85°C
CHANNEL ISOLATIONvs. RF FREQUENCY
MAX
1999
4A to
c102
RF FREQUENCY (MHz)
CHAN
NEL
ISOL
ATIO
N (d
B)
1800 1900
40
45
50
351700 2000
PLO = -3dBm, 0dBm, +3dBm
CHANNEL ISOLATIONvs. RF FREQUENCY
MAX
1999
4A to
c103
RF FREQUENCY (MHz)
CHAN
NEL
ISOL
ATIO
N (d
B)
1800 1900
40
45
50
351700 2000
VCC = 4.75V, 5.0V, 5.25V
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX
1999
4A to
c104
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T IF
POR
T (d
Bm)
15501450
-35
-30
-25
-20
-15
-10
-401350 1650
TC = -40°C
TC = +25°C
TC = +85°C
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX
1999
4A to
c105
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T IF
POR
T (d
Bm)
15501450
-35
-30
-25
-20
-15
-10
-401350 1650
PLO = +3dBm
PLO = 0dBm
PLO = -3dBm
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX
1999
4A to
c106
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T IF
POR
T (d
Bm)
15501450
-35
-30
-25
-20
-15
-10
-401350 1650
VCC = 4.75V
VCC = 5.0V
VCC = 5.25V
RF-TO-IF ISOLATIONvs. RF FREQUENCY
MAX
1999
4A to
c107
RF FREQUENCY (MHz)
RF-T
O-IF
ISOL
ATIO
N (d
B)
1800 1900
30
40
50
201700 2000
TC = -40°C, +25°C, +85°C
RF-TO-IF ISOLATIONvs. RF FREQUENCY
MAX
1999
4A to
c108
RF FREQUENCY (MHz)
RF-T
O-IF
ISOL
ATIO
N (d
B)
1800 19001700 2000
PLO = -3dBm, 0dBm, +3dBm
30
40
50
20
RF-TO-IF ISOLATIONvs. RF FREQUENCY
MAX
1999
4A to
c109
RF FREQUENCY (MHz)
RF-T
O-IF
ISOL
ATIO
N (d
B)
1800 19001700 2000
VCC = 4.75V, 5.0V, 5.25V
30
40
50
20
MA
X199
94A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
20
典型工作特性(续)(Typical Application Circuit optimized_for_the_Extended_RF_Band_(see_Table_1). VCC_=_5.0V,_fRF_=_1700MHz_to_2000MHz,_LO_is_low-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
LO LEAKAGE AT RF PORTvs. LO FREQUENCY
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T RF
POR
T (d
Bm)
1900175016001450
-60
-50
-40
-30
-20
-701300 2050
MAX
1999
4A to
c110
TC = +25°C
TC = +85°C
TC = -40°C
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX
1999
4A to
c111
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T RF
POR
T (d
Bm)
1900175016001450
-60
-50
-40
-30
-20
-701300 2050
PLO = +3dBm
PLO = 0dBm
PLO = -3dBm
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX
1999
4A to
c112
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T RF
POR
T (d
Bm)
1900175016001450
-60
-50
-40
-30
-20
-701300 2050
VCC = 4.75V, 5.0V, 5.25V
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX
1999
4A to
c113
LO FREQUENCY (MHz)
2LO
LEAK
AGE
AT R
F PO
RT (d
Bm)
1900175016001450
-50
-40
-30
-20
-10
-601300 2050
TC = +85°C
TC = -40°C
TC = +25°C
2LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1999
4A to
c114
LO FREQUENCY (MHz)
2LO
LEAK
AGE
AT R
F PO
RT (d
Bm)
1900175016001450
-50
-40
-30
-20
-10
-601300 2050
PLO = -3dBm
PLO = 0dBmPLO = +3dBm
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX
1999
4A to
c115
LO FREQUENCY (MHz)
2LO
LEAK
AGE
AT R
F PO
RT (d
Bm)
1900175016001450
-50
-40
-30
-20
-10
-601300 2050
VCC = 4.75V
VCC = 5.25V
VCC = 5.0V
LO SWITCH ISOLATION vs. LO FREQUENCY
MAX
1999
4A to
c116
LO FREQUENCY (MHz)
LO S
WIT
CH IS
OLAT
ION
(dB)
182516501475
45
55
65
351300 2000
TC = +85°C
TC = +25°C
TC = -40°C
LO SWITCH ISOLATION vs. LO FREQUENCY
MAX
1999
4A to
c117
LO FREQUENCY (MHz)
LO S
WIT
CH IS
OLAT
ION
(dB)
182516501475
45
55
65
351300 2000
PLO = -3dBm, 0dBm, +3dBm
LO SWITCH ISOLATION vs. LO FREQUENCYM
AX19
994A
toc1
18
LO FREQUENCY (MHz)
LO S
WIT
CH IS
OLAT
ION
(dB)
182516501475
45
55
65
351300 2000
VCC = 4.75V, 5.0V, 5.25V
MA
X19994A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
21
典型工作特性(续)(Typical Application Circuit optimized_for_the_Extended_RF_Band_(see_Table_1). VCC_=_5.0V,_fRF_=_1700MHz_to_2000MHz,_LO_is_low-side_injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
RF PORT RETURN LOSSvs. RF FREQUENCY
MAX
1999
4A to
c119
RF FREQUENCY (MHz)
RF P
ORT
RETU
RN L
OSS
(dB)
19001800
25
20
15
10
5
0
IF = 350MHz
301700 2000
PLO = -3dBm, 0dBm, +3dBm
IF PORT RETURN LOSSvs. IF FREQUENCY
MAX
1999
4A to
c120
IF FREQUENCY (MHz)
IF P
ORT
RETU
RN L
OSS
(dB)
410320230140
25
20
15
10
5
0
3050 500
VCC = 4.75V, 5.0V, 5.25V
LO SELECTED PORT RETURN LOSSvs. LO FREQUENCY
MAX
1999
4A to
c121
LO FREQUENCY (MHz)
LO S
ELEC
TED
PORT
RET
URN
LOSS
(dB)
200018001600
30
20
10
0
401400 2200
PLO = -3dBm
PLO = 0dBm
PLO = +3dBm
LO UNSELECTED PORT RETURN LOSSvs. LO FREQUENCY
MAX
1999
4A to
c122
LO FREQUENCY (MHz)
LO U
NSEL
ECTE
D PO
RT R
ETUR
N LO
SS (d
B)
200018001600
30
20
10
0
401400 2200
PLO = -3dBm, 0dBm, +3dBm
SUPPLY CURRENTvs. TEMPERATURE (TC)
MAX
1999
4A to
c123
TEMPERATURE (°C)
SUPP
LY C
URRE
NT (m
A)
603510-15
310
320
330
340
350
360
300-40 85
VCC = 4.75V
VCC = 5.0V
VCC = 5.25V
MA
X199
94A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
22
引脚配置/功能框图
EXPOSED PAD
EXPOSED PAD ON THE BOTTOM OF THE PACKAGE
1 2 3 4 5 6 7 8 9
10
11
12
13
14
15
16
17
18
VCC
IFD_SET
GND
IFD+
IFD-
IND_EXTD
VCC
LO_ADJ_D
N.C.
192021222324252627
LO2
GND
GND
GND
LOSE
L
GND
V CC
GND
LO1
RFM
AIN
TAPM
AIN
GND
V CC
GND
V CC
GND
TAPD
IV
RFDI
V
28
29
30
31
32
33
34
35
36
N.C.
LO_ADJ_M
VCC
IND_EXTM
IFM-
IFM+
GND
IFM_SET
VCC
TQFN(6mm × 6mm)
TOP VIEW
MAX19994A
+
引脚说明
引脚 名称 功能
1 RFMAIN 主通道RF输入。内部匹配为50Ω,需要一个输入隔直电容。
2 TAPMAIN主通道非平衡变压器的中间抽头。使用尽可能靠近该引脚放置的39pF和0.033μF电容旁路至GND,容值较小的电容离器件较近。
3, 5, 7, 12, 20, 22, 24,
25, 26, 34
GND 地。
4, 6, 10, 16, 21, 30, 36
VCC 电源。使用典型应用电路所示电容将其旁路至GND,电容应尽可能靠近引脚放置。
8 TAPDIV分集通道非平衡变压器的中间抽头。使用尽可能靠近该引脚放置的39pF和0.033μF电容旁路至GND,容值较小的电容离器件较近。
MA
X19994A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
23
引脚说明(续)
详细说明MAX19994A是一款双通道下变频器,设计用于提供8.4dB的转换增益、+25dBm的输入IP3、+14dBm的1dB输入压缩点以及9.8dB的噪声系数。
除具有高线性度性能外,器件还具有非常高的器件集成度。
该器件集成有两个双平衡混频器用于双通道下变频。主通道
和分集通道都包含非平衡变压器和匹配电路,允许50Ω单端连接至RF端口和两个LO端口。集成的单刀双掷(SPDT)开关在两个LO输入之间的切换时间为50ns,具有48dB的LO至LO隔离度,在RF端具有-42dBm的LO泄漏。此外,集成
LO缓冲器可以为各混频器核提供较强的驱动能力,将器件输入端所需的LO驱动减小到-6dBm至+3dBm。两个通道的IF端口配合差分输出进行下变频转换,可有效改善2LO-2RF性能。
器件优化于1450MHz至2050MHzLO频率范围,混频器支持高端和低端LO注入,分别工作在1200MHz至1700MHz和1700MHz至2000MHzRF输入范围。器件还支持50MHz至500MHzIF范围,外部IF器件可设置更低的频率范围(详细信息请参考典型工作特性)。器件也可以工作在上述范围以外,更多信息请参考典型工作特性。
引脚 名称 功能
9 RFDIV 分集通道RF输入。内部匹配为50Ω,需要一个输入隔直电容。
11 IFD_SETIF分集放大器的偏置控制。在该引脚与地之间连接一个电阻来设置分集IF放大器的偏置电流(参见典型应用电路)。
13, 14 IFD+, IFD- 分集混频器差分IF输出+/-。各引脚均需通过上拉电感连接至VCC(参见典型应用电路)。
15 IND_EXTD外部分集电感连接端。该引脚接地,也可以在该引脚与地之间连接一个低ESR的10nH电感,以提高RF与IF之间和LO与IF之间的隔离度(参见典型应用电路)。
17 LO_ADJ_DLO分集放大器的偏置控制。在该引脚与地之间连接一个电阻设置分集LO放大器的偏置电流(参见典型应用电路)。
18, 28 N.C. 没有连接,无内部连接。
19 LO1 本振1输入。该输入端在内部匹配为50Ω,需要一个输入隔直电容。
23 LOSEL 本振选择。该引脚为高电平时选择LO1,为低电平时选择LO2。
27 LO2 本振2输入。该输入端在内部匹配为50Ω,需要一个输入隔直电容。
29 LO_ADJ_MLO主放大器的偏置控制。在该引脚与地之间连接一个电阻来设置LO主放大器的偏置电流(参见典型应用电路)。
31 IND_EXTM外部主电感连接端。该引脚接地,也可以在该引脚与地之间连接一个低ESR的10nH电感,以提高RF与IF之间和LO与IF之间的隔离度(参见典型应用电路)。
32, 33 IFM-, IFM+ 主混频器差分IF输出-/+。各引脚均需通过上拉电感连接至VCC(参见典型应用电路)。
35 IFM_SET IF主放大器的偏置控制。在该引脚与地之间连接一个电阻设置IF主放大器的偏置电流(参见典型应用电路)。
— EP裸焊盘。内部连接至GND,使用多个接地过孔将该焊盘焊接到一个PCB焊盘,为器件与PCB地层之间提供良好的散热通道。多个接地过孔还有助于改善RF性能。
MA
X199
94A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
24
尽管该器件针对1450MHz至2050MHzLO频率范围进行优化,但它同样可以工作在更低的LO频率,支持1200MHz至1700MHz低端LO注入。然而,随着fLO频率的降低,性能有所下降。如需改善低端LO注入的性能,请与工厂联系。
RF端口和非平衡变压器当器件工作在1200MHz至1700MHzRF频率范围时,主通道和分集通道的RF输入端均在内部匹配为50Ω,无需外部匹配元件。输入端通过片上非平衡变压器内部直流短接到地,
因此需要隔直流电容。在整个1200MHz至1700MHz的RF频率范围内,RF端口的输入回波损耗典型值优于15dB。
还可以对器件的RF输入进行匹配,增加两个额外的4.7nH并联电感,使其工作在1700MHz至2000MHz更宽的RF频率范围,详细信息请参考表1。
LO输入、缓冲器和非平衡变压器器件针对1450MHz至2050MHz的LO频率范围进行了优化。作为一个附加功能,器件包括一个内部LOSPDT开关,可以用于跳频设计。该开关选择两个单端LO端口中的一个,允许外部振荡器在接入之前稳定在一个特定频率上。典型
LO切换时间为50ns,远远超过典型GSM应用的要求。如果不使用跳频功能,可以简单地将开关置于任意一个LO输入端。该开关由数字输入(LOSEL)控制:逻辑高电平时选择LO1;逻辑低电平时选择LO2。LO1和LO2输入端在内部匹配为50Ω,只需一个39pF的隔直电容。
LOSEL直接连接到逻辑源,为了避免损坏器件,VCC必须在LOSEL加载数字逻辑电平之前上电。对于在VCC之前加载LOSEL信号的应用,可在LOSEL端串联一个1kΩ的电阻来限制输入电流。
主通道和分集通道采用两级LO缓冲器,允许使用宽输入功率范围的LO驱动。片上低损耗非平衡变压器和LO缓冲器配合使用,驱动双平衡混频器。LO输入端与IF输出端之间的所有接口和匹配元件均已集成在芯片上。
高线性度混频器
MAX19994A双通道下变频器的核心由两个双平衡、高性能无源混频器组成。片上LO缓冲器具有较大的LO摆幅,可提供优异的线性度指标。与集成IF放大器配合使用时,级联后的IIP3、2LO-2RF抑制和噪声系数的典型值分别为+25dBm、68dBc和9.8dB。
差分IF器件具有50MHz至500MHz的IF频率范围,其低端频率取决于外部IF元件的频率响应。注意:这些差分端口可以改善IIP2性能。单端IF应用需要一个4:1(阻抗比)的非平衡变压器将200Ω的差分IF阻抗转换为50Ω单端输出。经过非平衡变压器之后,回波损耗的典型值为13dB。用户可以在混频器的IF端口使用差分IF放大器,但是IFD+/IFD-和IFM+/IFM-端口均需要隔直,以防止外部直流进入混频器的IF端口。
应用信息
输入和输出匹配
RF和LO输入端在内部匹配为50Ω,工作在1200MHz至1700MHz和1450MHz至2050MHz频率范围。工作在这两个频段时无需匹配元件。在整个1200MHz至1700MHz的RF频率范围内,RF端口的输入回波损耗典型值优于15dB;而在整个LO范围内,LO端口的回波损耗典型值优于15dB。RF和LO输入端只需通过隔直电容连接。
如果器件工作在1700MHz至2000MHz扩展RF频段,只需将隔直流电容更改为1.8pF,并在每个RF端口增加一个4.7nH的并联电感,详细信息请参考表1。更换上述元件后,在1700MHz至2000MHz频率范围内,RF端口的输入回波损耗典型值优于14dB。
IF输出阻抗为200Ω(差分)。为方便评估,通过外部低损耗4:1(阻抗比)非平衡变压器将该阻抗转化成50Ω单端输出(参见典型应用电路)。
MA
X19994A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
25
表1. 元件值
降低功耗模式
器件的每个通道均具有两个引脚(LO_ADJ__、IF__SET),允许通过外部电阻设置内部偏置电流。电阻的标称值如表1所示。增大电阻值可降低功耗,但代价是性能有所下降。
如果没有±1%精度的电阻,可以采用±5%的电阻替代。
选择3.3V为混频器供电也可以显著降低功耗,这种方式可以将整体功耗降低约47%,具体细节请参考3.3VSupplyACElectricalCharacteristics表和典型工作特性中与3.3V供电相关的特性曲线。
IND_EXT_电感在需要改善RF与IF之间和LO与IF之间隔离度的应用中,可以在IND_EXT_(引脚15和31)与地之间连接一个低ESR电感。如果不需要很高的隔离度,可以用一个0Ω电阻将IND_EXT_连接至地。
布局考虑
合理的PCB设计是任何RF/微波电路的一个重要部分。RF信号线应尽可能短,以减小损耗、辐射和电感。连接至混频器
的负载阻抗必须保证IF_-和IF_+与地之间的电容不会超过
几个皮法。为获得最佳性能,接地引脚须直接与封装底部的
裸焊盘连接。PCB上的裸焊盘必须连接至PCB的地层。建议采用多个过孔将该焊盘连接至地层。这种方法能为器件提供
一个良好的RF/散热路径。将器件封装底部的裸焊盘焊接至PCB。电路板布局请参考MAX19994A评估板,Gerber文件可从china.maxim-ic.com申请。
电源旁路
合理的电源旁路对高频电路的稳定性至关重要。如典型应用
电路所示,对各VCC引脚和TAPMAIN/TAPDIV引脚使用电容旁路(元件值如表1所示)。将TAPMAIN/TAPDIV的对地旁路电容放置在距相应引脚100mil以内的位置。
裸焊盘的RF/散热考虑MAX19994A采用36引脚薄型QFN-EP封装,其裸焊盘(EP)提供了一个与管芯之间的低热阻通路。在安装器件的PCB与EP之间保持良好的热传递通道非常重要。此外,EP应通过一个低电感路径接地。EP必须直接或通过一系列电镀过孔焊接至PCB的地层。
DESIGNATION QTY DESCRIPTION COMPONENT_SUPPLIER
C1, C8 239pF microwave capacitors (0402)1.8pF for Extended RF Band applications (fRF = 1.7GHz to 2GHz)
Murata Electronics North America, Inc.
C2, C7, C14, C16 4 39pF microwave capacitors (0402) Murata Electronics North America, Inc.
C3, C6 2 0.033FF microwave capacitors (0603) Murata Electronics North America, Inc.
C4, C5 2 Not used —
C9, C13, C15, C17, C18
5 0.01FF microwave capacitors (0402) Murata Electronics North America, Inc.
C10, C11, C12, C19, C20, C21
6 150pF microwave capacitors (0603) Murata Electronics North America, Inc.
L1, L2, L4, L5 4 120nH wire-wound, high-Q inductors (0805) Coilcraft, Inc.
L3, L6 2
10nH wire-wound, high-Q inductors (0603). Smaller values or a 0I resistor can be used at the expense of some LO leakage at the IF port and RF-to-IF isolation performance loss.
Coilcraft, Inc.
L7, L8 24.7nH inductor (0603). Installed for Extended RF Band applications only (1.7GHz to 2GHz).
TOKO America, Inc.
MA
X199
94A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
26
表1. 元件值(续)
典型应用电路
VCC
IFD_SET
GND
IFD+
IFD-
IND_EXTD
VCC
LO_ADJ_D
N.C.
LO2
GND
GND
GND
LOSE
L
GND
V CC
GND
LO1
RFM
AIN
TAPM
AIN
GND
V CC
GND
V CC
GND
TAPD
IV
RFDI
V
N.C.
LO_ADJ_M
VCC
IND_EXTM
IFM-
IFM+
GND
IFM_SET
VCC
VCC
VCC
VCC
VCC
VCCVCC
VCC
VCC
L7 L8
C2
C3 C4 C5 C6
C9C18
4:1T2T14:1
R4R1
L4L5L2L1
L6L3
C12 C10C11C21 C20C19
C13C17
C14C16
C15
R6R3
R5R2
C7
C8
RF MAIN INPUT RF DIV INPUT
IF DIV OUTPUTIF MAIN OUTPUT
LO1LO2 LO SELECT
C1
VCC
EXPOSED PAD
1 2 3 4 5 6 7 8 9
10
11
12
13
14
15
16
17
18
192021222324252627
28
29
30
31
32
33
34
35
36
MAX19994A
+
DESIGNATION QTY DESCRIPTION COMPONENT_SUPPLIER
R1, R4 2
681I ±1% resistors (0402). Used for VCC_=_5.0V applications. Larger values can be used to reduce power at the expense of some performance loss. Digi-Key Corp.
681I ±1% resistors (0402). Used for VCC_=_3.3V applications.
R2, R5 2
1.82kI ±1% resistors (0402). Used for VCC_=_5.0V applications. Larger values can be used to reduce power at the expense of some performance loss. Digi-Key Corp.
1.43kI ±1% resistors (0402). Used for VCC_=_3.3V applications.
R3, R6 2 0I resistors (1206) Digi-Key Corp.
T1, T2 2 4:1 transformers (200:50) TC4-1W-17 Mini-Circuits
U1 1 MAX19994A IC (36 TQFN-EP) Maxim Integrated Products, Inc.
MA
X19994A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关
27
芯片信息PROCESS: SiGe BiCMOS
封装信息如需最近的封装外形信息和焊盘布局,请查询china.maxim-ic.com/packages。请注意,封装编码中的“+”、“#”或“-”仅表示RoHS状态。封装图中可能包含不同的尾缀字符,但封装图只与封装有关,与RoHS状态无关。
封装类型 封装编码 文档编号
36引脚薄型QFN-EP T3666+2 21-0141
MA
X199
94A
双通道、SiGe、高线性度、1200MHz至2000MHz 下变频混频器,带有LO缓冲器/开关 修订历史
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修订号 修订日期 说明 修改页
0 4/10 最初版本。 —