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������� ��� �����
Optical NanoGauge / Optical MicroGauge
2
C11627 P12 C11295 P14
C10178 P10
SiO2
SiO2
SiO2
C12562 C11011
C11623
C11665
C10323
SiO2
P6
P16
P18 P20
P16
NEW
SiO2
Optical MicroGauge
700 μm
2900 μm
100 μm100 μm
50 μm
25 μm
0.5 μm
10 nm20 nm20 nm
Sample thickness
Optical NanoGauge Microscopic typeOptical NanoGauge / Optical MicroGauge
*The refractive index of SiO2 is 1.5, Si is 3.67 in this catalog.
Optical NanoGauge
1 mm100 μm10 μm1 μm100 nm
Extensibility model forresearch laboratory
Thick film measurementwith high speed
Embedded modelin 1Box unit
Ultrathin film measurementwith high speed
Multipointmeasurement
Microscope typeNanoGauge
Microscope typeMicroGauge
Embedded modelin 1Box unit
3
High measurement stability for focus and angular fluctuations
Defocus
No difficulty involved in designing a measurement systemShort down time for maintenanceNo adjustment jig necessary
Costreduction
Angularfluctuation
Roll-to-roll film production
Example: Inline measurement settings for film coating system
Let-off
Cutting, Roll-up
Drying, Curing
Multipoint NanoGaugeC11295
Optical NanoGaugeC12562
Optical MicroGaugeC11011
Coating, Deposition (PVD/CVD)
Plastic film, Bonding layer, ITO, Wet film
Coating layer
Film thickness, Coated layer thickness, Total thickness
Measurement after drying and curing
Example: Inline measurement settings for PVD/CVD system
Flange
Vacuumchamber
Multipoint NanoGaugeC11295
Max. 15 points
Film thicknessmeasurement
Evaporation film(PVD/CVD)
ITO, SiOx, NbO
Vacuum conditions - Vacuum level: 10-5 Pa - Environment temp: Less than +80 ˚C
Inside/outside of vacuum chamber is isolated by vacuum flange.Inside vacuum chamber, up to 15 vacuum fibers with 3 m maxlength can be installed.
* Please consult us for more details.
At a vertical movement of 6 mm, the Optical NanoGauge
has variations below 0.1 nm, while a typical thickness
measuring device exhibits variations up to 8 nm.
During angular movement from 0 degrees to 5 degrees,
the Optical NanoGauge has variations 0.39 nm (0.047 %)
while a typical thickness measuring device exhibits variations up to 5 nm or more.
Incident angle
0 degrees
3 degrees
5 degrees
Optical NanoGauge
702.23 nm
702.29 nm
702.62 nm
Typical thickness measuring device
702.47 nm
703.70 nm
709.38 nm
10
8
6
4
2
0
-20 3 5
Variation amount (nm)
Incident angle (degrees)
Optical NanoGauge
Typical thickness measuring device
3
3
2
2
1
10-1
-1
-2
-2
-3
-3
Optical NanoGauge
Typical thickness measuring device
0
Variation amount (nm)
Amount of vertical movement (mm)
Position
-3 mm
-2 mm
-1 mm
Reference point
+1 mm
+2 mm
+3 mm
Optical NanoGauge
701.59 nm
701.63 nm
701.66 nm
701.65 nm
701.66 nm
701.67 nm
701.65 nm
Typical thickness measuring device
698.39 nm
699.92 nm
701.13 nm
702.37 nm
703.51 nm
704.74 nm
705.91 nm
Focus dependence versus reference point: ±3 mm (1 mm pitch), WD of reference point: 10 mm Angular dependence versus reference point: 0 degrees to 5 degrees, WD of reference point: 10 mm
Reflectivity measurementTransmission measurement Chromaticity
Both surface analysis
Transmittance measurementis available.
Stability for focus700 nm SiO2 film measurement example 700 nm SiO2 film measurement example
Stability for angular fluctuations
4
C11665/C11011 C12562/C11295/C11627C12562/C11295/C11627C12562/C11295/C11627
Neighboring circuitmaking
Glass substrate production process (Electrostatic Capacitive touch panel)Touch panel
Semiconductor
Secondary battery
FPD
PV
Example applications
The Optical Gauge series can be used in each process in a variety of manufacturing settings.
A touch panel is the key factor in today's hottest digital products such as smart phones, tablets, digital cameras' liquid crystal displays, and advanced gaming systems. Although there are various detection schemes for touch panels, the resistive film manufacturing process is used here as an example to show how the Optical Gauge series is used in such a process.
The Optical Gauge series is used in the various manufacturing processes of semiconductor devices in which metal wiring is more multilayered, processes are increasingly miniaturized, and lower voltage is used. This contributes to improvement in the yield and shortens the time required to start a process.
The demand for secondary batteries, such as lithium ion, is rapidly increasing not only due to their use in personal computers and cell phones, but also with the development of electric vehicles and hybrid electric vehicles. The research and development of more efficient products are ongoing. The Optical Gauge series can be used in a wide range of processes in the manufacture of secondary batteries, contributing to promoting shorter tact time.
The Optical Gauge series can be used in a wide range of processes in the manufacture of FPD (flat-panel display) such as liquid crystal, LED, organic EL, VFD fluorescent display tube and plasma display.
Solar power generation is expanding continuously as a growing industry for the reduction of greenhouse gas emissions and other features. Also, many companies are engaging in research for improving the conversion efficiency of the solar cell or modules used in power generation. The Optical Gauge series can be used in a wide range of processes in the manufacture of solar cell or modules.
C11011C10178 C11011C10178 C11011C10178
C11011
C11665/C11011 C10323
C11665/C11011
C11665/C11011
Receiving substrate Etching
Wafer production process Pre-process
Ingot production Cut ingot Wafer polishing Wafer oxidizing
Rep
eat
Photoresistcoating Lithography Etching Ion implantation
Rep
eatSilicon
planarizationOxidizing,
Diffusion, Coating Cleaning
Electrode plateproduction
Crush/mixture
Electrode coil winding
Coating Roll press
Drying Drying
Slitter Separator
For NIR modelFor NIR modelFor NIR model
Array process
Glass substrate Coating Resist coating
EtchingCleaning
Inspection,Repair
Color filter substrateproduction process
Color filter process
Alignment filmcoating Rubbing
For transmission measurement model
Crystalline silicon PV production process
Silicon ingot Silicon slice Texture formation AR coat formation Electrode formation Heat sintering
Glass substrate Cleaning
CIGS PV production processMO
electrode formation PatterningCu-Ga filmformation
In filmformation
C12562/C11295/C11627
C12562/C11295/C11627C12562/C11295/C11627
C12562/C11295/C11627C12562/C11295/C11627
C12562/C11295/C11627
ITO Patterning Backside ITO Patterning
5
C11665/C11011C12562/C11295/C11627
Flexible printed substrate
Production process
Film
Coating filmPlastic filmObject color
AR coating, PET, Coating layer, PE, PMMA Coating film, Evaporation film, Functionality film,Acrylic resin, Video head
Micro measurement
Patterned semiconductorPatterned FPDMEMS
Multipoint measurement
Simultaneous measurement in multiplechamber In-line, in-situ measurement of APC
FPD
Cell gap, Organic EL film, Alignment film, TFTITO, MgO, Resist film on glass substratePolyimide, High-functioning film and Color film for FPD
Film thickness and color measurementof flat panel
Semiconductor material
Film on a waferThin film
Metal-oxide coating such as SiO2, SiC, Si and TiO2
Nitride coating, Wet film, Resist coatingPolished silicon, Optical disk, DLC, Carbon
In-situ measurement
Process feed gas
Process exhaust gas
Film formationprocess
Film formation process monitorDry and wet etching measurement
Metal-oxide coating such as SiO2 and Si
C11011 C11665/C11011
C11665/C11011
Heat-sealing Bonding film
Inspection
Back end process
Electrodeformation
Waferinspection
Waferpolishing
Waferdicing
Stealth dicing
Wirebonding
Mold
Productinspection
Assembly process Inspection process
StackingDischargeand charge Sorting
Alignment filmcoating
Seal materialcoating
Cell process
Spacerspraying Bonding
LCimplantation
Sealing
Sealing
Bondingpolarizing plate
Module process
Mountbacklight
Dynamic operatinginspection
SealingMapping
measurement
Quality controlinspection Modularization
CIGS filmformation
CdS buffer layerformation Patterning
Transparentelectrode formation Patterning
Quality controlinspection
Metal-oxide coating such as TiO2
Film with fillerResist coating, Oxide film, Nitrogen film
Tester
C12562/C11295/C11627 C12562/C11295/C11627
C12562/C11295/C11627
C12562/C11295/C11627
Glass substrate production process
EtchingNeighboring circuit
making
6
10 nm to 100 μm thin film high speed measurement
10 nm 100 μmSiO2
1 μm 10 μm 100 μm 1 mm100 nm
Measurablerange
Feature
1
Feature
2
Feature
3
Feature
4
Feature
5
Feature
6
Feature
7
Feature
8
Feature
9
Specification
Precise measurement of fluctuating film
Analyze optical constants (n, k)
External control available
*1: When converted with the refractive index of SiO2 = 1.5*2: Standard deviation (tolerance) when measuring 400 nm thick SiO2 film*3: Depending on optical system or objective lens magnification to be used*4: Measurement guaranteed range listed in VLSI standard measurement warranty sheet*5: Continuous data acquisition time excludes analysis time
Type number*1
*2 *3
*3
*3
*5
*3 *4
Measurement film thickness
Repeatability
Accuracy
Light sourceMeasurement wavelength
Spot size
Working distance
Number of measurable layers
Analysis
Measurement time
External control function
Power requirement
Power consumption
Fiber connector shape
C12562-0210 nm to 100 μm
0.02 nm
±0.4 %
Halogen
400 nm to 1100 nm
Approx. φ1 mm
10 mm
Max.10 layers
FFT analysis, Fitting analysis, Optical constant analysis
3 ms / point
RS-232C, Ethernet
AC 100 V to 240 V, 50 Hz/60 Hz
80 VA
FC
New model for wider thickness range and higher speed measurement
Ultrathin film measurementwith high speed
The Optical NanoGauge Film Thickness C12562 is a non-contact film thickness measurement system utilizing spectral interferometry. The Optical Gauge series is capable of measuring the thinnest 10 nm film. Capable of a wide range of film thickness measurements from 10 nm to 100 μm, it can accommodate a wide variety of objects. Moreover, high-speed measurement up to 100 Hz is possible, enabling measurement in fast-moving lines.
Capable of measuring 10 nm thin films
Shortening of cycle time (max. 100 Hz)
Enhanced external triggers(accommodates high-speed measurement)
Covers broad wavelength range (400 nm to 1100 nm)
Simplified measurement is added to the software
Capable of both surface analysis
NEW C12562������� ���� ��
10 nm to 100 μm thin film high speed measurement
7
C12562 standard system (Sample stage)
150±1
75±1
53 (M
IN)
183+
30 (
MA
X)
52+
30 (
MA
X)
2 (M
IN)
27
10±1
8±1
130±1
280±1
Option
Configuration example
StandardOption
Optical NanoGaugeC12562
Optical NanoGaugeC12562
Sample stageA10192-04
Sample
Data analyzerM11698
Film thicknessmeasurement software
StandardOption
C12562 standard system (Mounted into customer's equipment)
Sample
RS-232C/Ethernet
Sample stage Light condenser optics
Data analyzerData analyzer M11698
(Unit: mm)Dimensional outline
Main unit (Approx. 7.3 kg)
Sample stage A10192-04
Manufacturing equipment (i.e., etching or film forming equipment)
A10192-04 (Lensless type)This stage accommodates samples up to φ200 mmin diameter. Light condenser not included.
This receptacle is a tool for setting a fiber probe in a mount.
A10192-05 (Visible light condenser lens type)This stage accommodates samples up to φ200 mmin diameter. It comes with a visible-light condenserlens with corrected chromatic aberration.WD: approx. 35 mmMeasurement spot diameter: φ1.5 mm
Macro optics A10191-03Visible light condenser lens for A10192-05
Two branch light guide
Data analyzer
1 set of a monitor, mouse, and keyboard.
FC receptacle A12187-02
This receptacle lamp unit for C12562.
Replacement lamp unit L12839-01
Analysis software for both surface.
Film thickness measurement software U12708-01
Optical NanoGauge C12562
USB2.0 LAN1 LAN2 MONITOR AUDIOUSB3.0
LIGHT
SENSOR
TRIG. IN
POWER
LINE
Optical NanoGauge C12562
USB2.0 LAN1 LAN2 MONITOR AUDIOUSB3.0
LIGHT
SENSOR
TRIG. IN
POWER
LINE
Optical NanoGauge C12562
USB2.0 LAN1 LAN2 MONITOR AUDIOUSB3.0
LIGHT
SENSOR
TRIG. IN
POWER
LINE
292±1 408±1
6±2
98.5
±1
Film thicknessmeasurement
software
D95P connector
SUS-acceptable light tube
5000+200-0
200+50-0
FC connector
φ10
φ12
φ20
8
Theoretical wave pattern
Spectral reflection factor(measurable quantity)
Wavelength (nm)
Ref
lect
ivity
(%
)
400
20
40
60
80
500 600 700 800
Interference spectrum measurement of transparent electrode (ITO film: 350 nm)
The analyzed film thickness is the theoretical value, which is the least RMS (Root Mean Square) value of the theoretical wave pattern and measurement reflection pattern.
Spectral interferometry is used to measure film thickness.When light enters a thin film sample, multiple reflections occur inside the thin film. These multiple-reflection light waves boost or weaken each other along with their phase difference. The phase difference of each multiple-reflection light is determined by the light wavelength and optical path length (= distance that light moves back and forth in the thin film multiplied by the film refractive index).
This phase difference allows the spectrum reflected from or transmitted through the sample to produce a unique spectrum that depends on the film thickness. Spectral interferometry is a technique for measuring film thickness by analyzing that particular spectrum. The Optical NanoGauge utilizes spectral interferometry to analyze a target spectrum by the curve-fitting or FFT (Fast Fourier Transform) method that matches your application.
Incident lightPhase
difference
Reflected light
Film
Substrate
Intensity
Intensity
Intensity
Number of signal interval increased.
Wavelength
Wavelength
Wavelength
Thin film
Thick film
The number of signals is increased as the film thickness becomes thick. The signal intervals in short wavelength range appears more often than those in the long wavelength range.
Analysis by curve fitting For measuring less than1 μm film thickness
Analysis by FFT (Fast Fourier Transform) For measuring more than 1 μm film thickness
Fourier transform
Measurement of etalon (30 μm)
Ref
lect
ivity
(%
)
500
12.5
17.5
22.5
15
20
25
600 700 800 900 1000
Wavelength (nm)
4.00
2.00
6.00
0.1 1.0 10 100
0.00
Inte
nsity
Optical film thickness (μm)
30 μm
Principle
9
Both surface analysis
Film thickness
150 nm (n=2.0)
100 nm (n=1.5)
1000 nm (n=1.5)
150 nm1100 nm2
1000 nm3 1120.00 nm3
Film thicknessanalysis result
143.69 nm1119.25 nm2
Film thicknessanalysis result
Both side analysis Standard measurement
Ref
lect
ivity
400 600 800 1000Wavelength (nm)
Ref
lect
ivity
400 600 800 1000Wavelength (nm)
Ref
lect
ivity
400 600 800 1000Wavelength (nm)
Ref
lect
ivity
400 600 800 1000Wavelength (nm)
150 nm1100 nm2
1100 nm3 960.00 nm3
Film thicknessanalysis result
147.28 nm1120.06 nm2
Film thicknessanalysis result
Both surface analysis for both-side-coated samplesIn some cases, a coating film is applied to the back side of thin film samples. If such both-side-coated samples are measured by an ordinary method, the fitting cannot be consistent as the effect of the film on the back side is not taken into account, and therefore accurate values cannot be obtained. In addition, if the thickness of the film on the back side changes, the system cannot follow the change during the measurement and this may largely affect measured values.
Since the Optical Gauge is equipped with the both surface analysis function as an option, which makes it possible to measure both-side-coated samples accurately measurement of both-side-coated samples.
100 μm (n=1.7)Board
1
2
3
Both-side-coated samples
Coating film on the surface: first layer
Coating film on the surface: second layer
Coating film on the bottom surface
Thickness of coating film not only on the surface but also on the back side is measured with high accuracy.
Errors in measured values are large.
*This is the result of a simulation using an analysis model.
When the thickness of the coating filmon the back side is increased by 100 nm
Thickness is measured with high accuracy, even back side film thickness is changed.
Measurement errors are large, and the values are inaccurate as changes in the coating film on the back side cannot be followed.
*This is the result of a simulation using an analysis model.
Measurable wave pattern (simulation)Theoretical wave pattern
The analysis is performed using the film thickness measurement software U12708-01.
NEW
NEW
10
20 nm 50 μmSiO2
1 μm 10 μm 100 μm 1 mm100 nm
Measurablerange
Feature
1
Feature
2
Feature
3
Feature
4
Feature
5
Feature
6
Feature
7
������� ���� ��C10178
Highly accurate and real time measurement of thin filmfrom 20 nm to 50 μm thickness
High speed and high accuracy
Real time measurement
Mapping function
Precise measurement of fluctuating film
Analyze optical constants (n, k)
External control available
Specification
*1: When converted with the refractive index of SiO2 = 1.5*2: Standard deviation (tolerance) when measuring 400 nm thick SiO2 film*3: Depending on optical system or objective lens magnification to be used*4: Measurement guaranteed range listed in VLSI standard measurement warranty sheet*5: Continuous data acquisition time excludes analysis time
C10178-01Type number C10178-03 (NIR model)
20 nm to 50 μm
0.01 nm
400 nm to 1100 nm
250 VA
150 nm to 50 μm
0.05 nm
900 nm to 1650 nm
230 VA
*1
*2 *3
*3
*3
*5
*3 *4
Measurement film thickness
Repeatability
Accuracy
Light sourceMeasurement wavelength
Spot size
Working distance
Number of measurable layers
Analysis
Measurement time
External control function
Interface
Power requirement
Power consumption
Fiber connector shape
±0.4 %
Halogen
Approx. φ1 mm
10 mm
Max.10 layers
FFT analysis, Fitting analysis, Optical constant analysis
19 ms / point
RS-232C, Inter-software data transfer by PIPE or Ethernet
USB 2.0
AC100 V to 120 V / AC200 V to 240 V, 50 Hz / 60 Hz
φ12 sleeve shape
Extensibility model forresearch laboratory
Versatile standard type for basic research
The Optical NanoGauge Film Thickness C10178 is a non-contact film thickness measurement system utilizing spectral interferometry. Film thickness is measured quickly with high sensitivity and high accuracy through spectral interferometry. As our photonic multichannel analyzer (PMA) is used as the detector, a variety of measurement items such as quantum yield, reflectance, transmittance and absorption can also be measured simultaneously while measuring film thickness of various optical filters, coating, etc.
Quantum yield, reflectance, transmittanceand absorption can be measured withspecific accessories.
Highly accurate and real time measurement of thin filmfrom 20 nm to 50 μm thickness
Spectral interferometry is used to measure film thickness.When light enters a thin film sample, the sample produces a unique spectrum that depends on the film thickness. Spectral interferometry is a technique for measuring film thickness by analyzing that particular spectrum.
Incident lightPhase
difference
Reflected light
Film
Substrate
Intensity
Intensity
Intensity
Number of signal interval increased.
Wavelength
Wavelength
Wavelength
Thin film
Thick film
11
0.05
Configuration example
C10178 standard system
Option
StandardOption
StandardOption
C10178 mapping system for measuring thickness distribution
Mapping stage C8126-31, -32Measurement time: 2 s/point
Stage movement resolution: 0.1 mmStage movement repeatability: ±0.01 mm
Measurement area: to 140 mm square (C8126-31) (4 inch to 8 inch wafer) : to 200 mm square (C8126-32) (4 inch to 12 inch wafer)
Macro optics A10191-01
Light condenser optics
LED light source
Data analyzer
Sample stageLED light source L11693
(Unit: mm)Dimensional outline
Photonic Multichannel Analyzer (Approx. 5 kg) Halogen light source (Approx.2.6 kg)
Two branch light guide
Film thicknessmeasurement software
SIGNAL INPUT
PHOTONIC MULTI-CHANNEL ANALYZER C10027C10027
Halogen light sourceL6758-11
Data analyzer C10471-01
Photonic Multichannel Analyzer
Sample
Sample stageA10192-01
SIGNAL INPUT
PHOTONIC MULTI-CHANNEL ANALYZER C10027C10027
Mapping stageC8126-31,-32
Data analyzerC9025-11
Photonic Multichannel Analyzer
USB 2.0 / RS-232C
Film thicknessmeasurement software
Halogen light sourceL6758-11
Visible light condenser lens for A10192-02
Macro optics A10191-02IR condenser lens for A10192-03.
A10192-01 (Lensless type)This stage accommodates samples up to φ200 mmin diameter. Light condenser not included.
A10192-02 (Visible light condenser lens type)This stage accommodates samples up to φ200 mmin diameter. It comes with a visible-light condenserlens with corrected chromatic aberration. (For C10178-01)WD: approx. 35 mm, Measurement spot diameter: φ1.5 mm
A10192-03 (IR condenser lens type)This stage accommodates samples up to φ200 mmin diameter. It comes with a condenser lens coveringthe UV to near infrared light range. (For C10178-03)WD: approx. 35 mm, Measurement spot diameter: φ1.5 mm
Wavelength: 420 nm to 720 nm
Data analyzer C10471-01Laptop type data analyzer is available as an option.
Data analyzer C9025-11A desktop data analysis device for mappingmeasured result is available.
L6758-11
A10193-02
80±0.2
φ12
0 -0.0
5
2000+100 0 300+100
0
φ9.
2
50±0.2
50±0.2
*Please refer to page 7 the dimensional outline of sample stage A10192.
C10027-02 (Extensibility model for research laboratory)
383±2
9.7±
0.5
PHOTONIC MULTI-CHANNEL ANALYZER
SIGNAL INPUT
C10027
99±1
262±1
124±
1
C10028-01 (NIR model)PHOTONIC MULTI-CHANNEL ANALYZER
SIGNAL INPUT
C10028
262±1 433±2
9.7±
0.5
2085
57.5
15
8013
0
115 231
188
0.05
φ18
±0.2
φ7
0 -0.1
φ10
0.05
0.05
0.05
0 -0.1
φ10
50±0.2
12
Specification
���� ��� ��� �� �������� C11627
*1: When converted with the refractive index of SiO2 = 1.5*2: Standard deviation (tolerance) when measuring 400 nm thick SiO2 film*3: Depending on optical system or objective lens magnification to be used*4: Measurement guaranteed range listed in VLSI standard measurement warranty sheet*5: Continuous data acquisition time excludes analysis time
Type number*1
*2 *3
*3
*3
*5
*3 *4
Measurement film thickness
Repeatability
Accuracy
Light source
Measurement wavelength
Spot size
Working distance
Number of measurable layers
Analysis
Measurement time
External control function
Power requirement
Power consumption
Fiber connector shape
C11627-01
Integrates a light source, spectrometer and data analyzer into a compact box,ideal for mounting in customer's equipment
The Optical NanoGauge C11627 is a non-contact film thickness measurement system utilizing spectral interferometry. With the integration of the light source, a spectrometer and a data analysis unit in one unit, the C11627 offers a compact configuration consisting solely of the main unit and optical fiber. Designed for compactness and space savings under the assumption that it will be built into the customer's system, the C11627 can accommodate a wide variety of objects of measurement. Furthermore, because it is reference-free, the C11627 eliminates the need for cumbersome reference measurement and can perform high-speed and high-accuracy measurement for long hours in a stable manner.
20 nm 50 μmSiO2
1 μm 10 μm 100 μm 1 mm100 nm
Measurablerange
Highly accurate and real time measurement of thin filmfrom 20 nm to 50 μm thickness
Highly accurate and real time measurement of thin filmfrom 20 nm to 50 μm thickness
Feature
1
Feature
2
Feature
3
Feature
4Reference-free operation
Compact and space-saving
High speed and high accuracy
Feature
5
Feature
6
Precise measurement of fluctuating film
Analyze optical constants (n, k)
External control available
20 nm to 50 μm
0.02 nm
±0.4 %
LED
420 nm to 720 nm
Approx. φ1 mm
10 mm
Max.10 layers
FFT analysis, Fitting analysis, Optical constant analysis
19 ms / point
RS-232C / Ethernet
AC 100 V to 240 V, 50 Hz/60 Hz
70 VA
FC
Embedded modelin 1Box unit
Spectral interferometry is used to measure film thickness. When light enters a thin film sample, the sample produces a unique spectrum that depends on the film thickness. Spectral interferometry is a technique for measuring film thickness by analyzing that particular spectrum.
Incident lightPhase
difference
Reflected light
Film
Substrate
Intensity
Intensity
Intensity
Number of signal interval increased.
Wavelength
Wavelength
Wavelength
Thin film
Thick film
13
C11627 standard system (Sample stage)
Option
Configuration example
StandardOption
Optical NanoGaugeC11627-01
Optical NanoGaugeC11627-01
Sample stageA10192-04
Sample
Data analyzerM11698
Film thicknessmeasurement software
StandardOption
C11627 standard system (Mounted into customer's equipment)
Sample
RS-232C/Ethernet
(Unit: mm)Dimensional outline
Main unit (Approx. 6 kg) Light guide
Macro optics A10191-03
Light condenser opticsSample stage
Visible light condenser lens for A10192-05 A10192-04 (Lensless type)This stage accommodates samples up to φ200 mmin diameter. Light condenser not included.
A10192-05 (Visible light condenser lens type)This stage accommodates samples up to φ200 mmin diameter. It comes with a visible-light condenserlens with corrected chromatic aberration.WD: approx. 35 mmMeasurement spot diameter: φ1.5 mm
Manufacturing equipment (i.e., etching or film forming equipment)
OPTICAL NANO GAUGE
COM LAN USB
LINE
FIBERPROBE
PS2 MONITORPOWER
C11627
OPTICAL NANO GAUGE
COM LAN USB
LINE
FIBERPROBE
PS2 MONITORPOWER
C11627
Data analyzerData analyzer M116981 set of a monitor, mouse, and keyboard.
Data analyzer
*Please refer to page 7 for the dimensional outline of sample stage A10192.
This receptacle is a tool for setting a fiber probe in a mount.
FC receptacle A12187-02
292±1
OPTICAL NANO GAUGE C11627
COM LAN PS2 MONITOR USB
LINE
POWERFIBERPROBE
333±1
6±2
98.5
±1
FC connector SUS-acceptable light tube φ7 FC connector
36 φ10
φ10 36
5000+200 0
Film thicknessmeasurement
software
14
Enables simultaneous measurements in multiple chambers in thin filmproduction lines and multipoint measurements in film production lines
20 nm 100 μmSiO2
1 μm 10 μm 100 μm 1 mm100 nm
Measurablerange
Feature
1
Feature
2
Feature
3
Feature
4
Feature
5
Feature
6
Feature
7
Feature
8
Feature
9
Feature
10
���������� ������ � C11295
Simultaneous film thickness measurementup to 15 points
Reference-free operation
Stable long-term measurement bycorrection of light intensity fluctuation
Alarm and warning function (pass/fail)
Reflectance (transmittance) andspectrum measurements
High speed and high accuracy
Real time measurement
Precise measurement of fluctuating film
Analyze optical constants (n, k)
External control availableSpecification
Multipoint measurement model for real time simultaneous measurements
*1: Model number suffix "-XX" indicates number of measurement points. *2: When converted with the refractive index of SiO2 = 1.5*3: Standard deviation (tolerance) when measuring 400 nm thick SiO2 film*4: Depending on optical system or objective lens magnification to be used*5: Measurement guaranteed range listed in VLSI standard measurement warranty sheet*6: Halogen light source model is C11295-XXH.*7: Continuous data acquisition time excludes analysis time
Type number *1C11295-XX
*3 *4
*2
*6
*4
*4
*7
*4 *5
Measurement film thickness
Repeatability
Accuracy
Light source
Measurement wavelength
Spot size
Working distance
Number of measurable layers
Analysis
Measurement time
External control function
Interface
Power requirement
Power consumption
Fiber connector shape
Number of measurement points
20 nm to 100 μm
0.02 nm
±0.4 %
Xenon
320 nm to 1000 nm
Approx. φ1 mm
10 mm
Max.10 layers
FFT analysis, Fitting analysis
19 ms / point
Ethernet
USB 2.0 (Main unit - Computer)
RS-232C (Light source - Computer)
AC 100 V to 240 V, 50 Hz/60 Hz
Approx. 330 VA (2 ch) to Approx. 450 VA (15 ch)
SMA
2 to 15
Multipointmeasurement
Enables simultaneous measurements in multiple chambers in thin filmproduction lines and multipoint measurements in film production lines
The Multipoint NanoGauge Film Thickness C11295 is a film thickness measurement system utilizing spectral interferometry. It is designed to measure film thickness as part of the semiconductor manufacturing process, as well as for quality control of the APC and films that are mounted on semiconductor manufacturing equipment. The C11295 performs real time multipoint measurements, and enabled simultaneous measurements in multiple chambers and multipoint measurement on the surface of a film. The C11295 can also measure the reflectance (transmittance), the color of the object, and the temporal change simultaneously with film thickness measurement.
Spectral interferometry is used to measure film thickness. When light enters a thin film sample, the sample produces a unique spectrum that depends on the film thickness. Spectral interferometry is a technique for measuring film thickness by analyzing that particular spectrum.
Incident lightPhase
difference
Reflected light
Film
Substrate
Intensity
Intensity
Intensity
Number of signal interval increased.
Wavelength
Wavelength
Wavelength
Thin film
Thick film
15
Configuration example
C11295-03 standard system
Option
StandardOption
(Unit: mm)Dimensional outline
Data analyzerData analyzer C10471-21Laptop type data analyzer is available as an option.
Film thickness monitor Color monitor
Measuring data
Measurement value trend data
Alarm and warning can be set to appear during monitoring
Warningscreen
Monitor screen
Multipoint NanoGauge
Simultaneous measurement
Analyzer
Lightsource Fiber branching method
Light source
Analyzer
Bifurcated fiber
Multibranchingfiber
Measurement time difference occurs
Multidetector method
Concept view comparing multidetector and fiber branch method
Multipoint measurement method
Measurement screen
Multichannel analyzer
* Available using halogen light model.
POWER
Light source*
Film thicknessmeasurement software
SampleData analyzer C10471-21
Typical thickness measuring device
Measurement mode selectionfilm thickness / reflectance / transmittance
Main unit (Approx. 6 kg)
Light source (Approx. 6.4 kg)
Light source light guide
This receptacle is a tool for setting a fiber probe in a mount.
SMA receptacle A12187-01
442 308
123.
5
39.539.5 232
12.736
16 16110142
158
227
5
311
Measurement light guide 30
420.3
φ6
(50.3) 500 +30 0 50
φ4.8
φ8
SMA connector30
φ26 0 -0
.1
φ15
-0.0
2-0
.10
1000+50 0
φ4.8
φ20
SMA connectorSMA connector1000+100
0 10 000 +200 0100
φ4.8
16
Highly accurate and real time measurement of thin filmin micro field of view through microscope
Highly accurate and real time measurement of thin filmin micro field of view through microscope
Feature
1
Feature
2
Thickness measurement in micro fieldof view
High speed and high accuracy
Specification
���������� ��� �� ���� ����� C10323/C11623
*1: SiO2 film measurement features*2: Si film measurement features*3: Standard deviation (tolerance) when measuring 400 nm thick SiO2 film*4: Standard deviation when a 6 μm thick silicon film was measured*5: Measurement guaranteed range listed in VLSI standard measurement warranty sheet*6: Depending on optical system or objective lens magnification to be used
Type number C10323-01 C11623-21
Microscopic type for measuring thin film in small area
The Optical Gauge C10323 and C11623 are a microscopic thickness measurement systems. Objects with irregular surfaces that would produce high level of scattered light cannot be measured at the macro level. For these types of objects, measuring a small area reduces scattered light making measurement possible.
20 nm 50 μmSiO2
0.5 μm 700 μmSiO2
0.5 μm 300 μmSi
1 μm 10 μm 100 μm 1 mm100 nm
Measurablerange
Feature
3
Feature
4
Analyze optical constants (n, k)
External control available
C11623
C10323
*1
*2
*6
*5 *6
Repeatability
Accuracy
Light source
Measurement wavelength
Spot size
Working distance
Number of measurable layers
Analysis
External control function (Option)
Interface
Power requirement
Power consumption
Measurementfilm thickness
Refractive index of glass: 1.5
Refractive index of silicon: 3.67
±0.4 %
Halogen
φ8 μm to φ80 μm
Refer to objective lens list
Max.10 layers
FFT analysis, Fitting analysis, Optical constant analysis
RS-232C / Inter-software data transfer by PIPE / Ethernet
USB 2.0
AC100 V to 120 V / AC200 V to 240 V, 50 Hz / 60 Hz
330 VA
20 nm to 50 μm
-
0.02 nm
400 nm to 1100 nm
*3
0.5 μm to 700 μm
0.5 μm to 300 μm
0.1 nm
940 nm to 1000 nm
*4
Microscope typeMicroGauge
Microscope typeNanoGauge
Spectral interferometry is used to measure film thickness. When light enters a thin film sample, the sample produces a unique spectrum that depends on the film thickness. Spectral interferometry is a technique for measuring film thickness by analyzing that particular spectrum.
Incident lightPhase
difference
Reflected light
Film
Substrate
Intensity
Intensity
Intensity
Number of signal interval increased.
Wavelength
Wavelength
Wavelength
Thin film
Thick film
17
C10323-01 microscope system
Option
StandardOption
(Unit: mm)Dimensional outline
POWER
SIGNAL INPUT
PMA-11PHOTONIC MULTI-CHANNEL ANALYZER
Monitor Photonic Multichannel AnalyzerC10027-02
Halogenlight sourceL6758-11
Film thicknessmeasurement software
Data analyzerC10471-01
Sample stageA10407-01
Objective lens5× to 50×
Objective lens
Data analyzerData analyzer C10471-01Laptop type data analyzer is available as an option.
Lens
5×10×20×50×
Measurement spot size
φ80 μm
φ40 μm
φ20 μm
φ8 μm
NA
0.14
0.26
0.40
0.42
Working distance
37.5 mm
30.5 mm
20.0 mm
17.0 mm
Microscopicobjective lens
Macro measurement Micro measurementwith microscope
Samples which are difficult to measure with the conventional macro system, such as a wafer with irregular patterns and MEMS, can be measured with a microscopic system. Samples with irregular surfaces may not be able to be measured at the macro level due to high level of scattered light. In the micro measurement with a microscopic system, the measurement point can be narrowed down to a flat area with little scattered light, that makes measurement possible.
Principle and advantages of microscopic system
Scattered light
Scattered light
Scattered light
A10407-01 (Stage moving area: 75 mm × 50 mm)
A10407-02 (Stage moving area: 150 mm × 150 mm)
Sample stage
Microscope unit (Approx. 15 kg)
Sample stage for A10406 (Option)
111 17
4
205
317
129
4540
174
186
φ34
A10407-01
134 13
4
84
181227
140.5
25.5 φ34
A10407-02
Configuration example
Photonic Multichannel Analyzer (Approx. 5 kg) Halogen light source (Approx.2.6 kg)L6758-11
2085
57.5
15
8013
0
115 231
188
40
341
262 167 114 68
617
A10406-01
C10027-02
383±2
9.7±
0.5
PHOTONIC MULTI-CHANNEL ANALYZER
SIGNAL INPUT
C10027
99±1
262±1
18
Specification
���� ��� ��� �� �� ������ C11665An integrated built-in system capable of handling a wide variety of objects,including thin films and substrates
The Optical Microgauge C11665 is non-contact film thickness measurement and is designed compact of integrating a light source, a detector and a data analysis unit in 1 box.In the semiconductor industry, the widespread use of TSV technology is making substrate thickness measurement a critical area, while the semiconductor film industry is making the bonding layers ever thinner. Advances in these fields now require high accuracy film thickness measurement in the 1 μm to 300 μm range. The C11665 works well on various types of materials from silicon substrates to thin films and easily measures thicknesses in 0.5 μm to 700 μm range often used by semiconductor and film manufacturers.
1 μm 10 μm 100 μm 1 mm100 nm
Measurablerange
One unit measures a wide range of materials from thin filmto silicon substrate in thickness from 0.5 μm to 700 μm
Feature
1
Feature
2
Feature
3
Feature
4
Reference-free operation
Compact and space-saving
High speed and high accuracy
Precise measurement of fluctuating film
Feature
5
Feature
6
Analyze optical constants (n, k)
External control available
One unit measures a wide range of materials from thin filmto silicon substrate in thickness from 0.5 μm to 700 μm
0.5 μm 700 μmSiO2
0.5 μm 300 μmSi
*1: SiO2 film measurement features*2: Si film measurement features*3: Standard deviation when a 6 μm thick silicon film was measured*4: Depending on optical system or objective lens magnification to be used*5: At the time of the etalon measurement*6: Continuous data acquisition time excludes analysis time
Type number C11665-01*1
*2
*4
*4
*6
*4 *5
*3 *4
Measurement filmthickness
Refractive index of glass: 1.5
Refractive index of silicon: 3.67
Repeatability
Accuracy
Light source
Measurement wavelength
Spot size
Working distance
Number of measurable layers
Analysis
Measurement time
External control function
Power requirement
Power consumption
Fiber connector shape
0.5 μm to 700 μm
0.5 μm to 300 μm
0.1 nm
±1 %
LED
940 nm to 1000 nm
Approx. φ1 mm
5 mm
Max.10 layers
FFT analysis, Fitting analysis, Optical constant analysis
19 ms/point
RS-232C / Ethernet
AC 100 V to 240 V, 50 Hz/60 Hz
85 VA
FC
Embedded modelin 1Box unit
Spectral interferometry is used to measure film thickness. When light enters a thin film sample, the sample produces a unique spectrum that depends on the film thickness. Spectral interferometry is a technique for measuring film thickness by analyzing that particular spectrum.
Incident lightPhase
difference
Reflected light
Film
Substrate
Intensity
Intensity
Intensity
Number of signal interval increased.
Wavelength
Wavelength
Wavelength
Thin film
Thick film
19
Spectral reflection factor(measurable quantity) Theoretical wave pattern
Interference spectrum measurement of resist film
Analysis by curve fitting For measuring less than 10 μm film thickness
Analysis by FFT (Fast Fourier Transform) For measuring more than 10 μm film thickness
Measurement of etalon (300 μm)
The analyzed film thickness is the theoretical value, which is the least RMS (Root Mean Square) value of the theoretical wave pattern and measurement reflection pattern.
300 μmFourier transform
C11665 standard system (Sample stage)
Option
Configuration example
StandardOption
Optical NanoGaugeC11665-01
Sample stageA10192-04
Sample
Data analyzerM11698
Film thicknessmeasurement software
StandardOption
C11665 standard system (Mounted into customer's equipment)
Sample
RS-232C/Ethernet
(Unit: mm)Dimensional outline
Sample stageA10192-04 (Lensless type)This stage accommodates samples up to φ200 mmin diameter. Light condenser not included.
OPTICAL NANO GAUGE
COM LAN USB
LINE
FIBERPROBE
PS2 MONITORPOWER
C11665
Manufacturing equipment (i.e., etching or film forming equipment)
OPTICAL NANO GAUGE
COM LAN USB
LINE
FIBERPROBE
PS2 MONITORPOWER
C11665
Data analyzerData analyzer M11698
Main unit (Approx. 7.2 kg)
292±1
OPTICAL MICRO GAUGE C11665
COM LAN PS2 MONITOR USB
LINE
POWERFIBERPROBE
408±1
6±2
98.5
±1
Optical NanoGaugeC11665-01
1 set of a monitor, mouse, and keyboard.
This receptacle is a tool for setting a fiber probe in a mount.
*Please refer to page 7 the dimensional outline of sample stage A10192.
FC receptacle A12187-02
Data analyzer
Film thicknessmeasurement software
Analysis method
Light guideFC connector SUS-acceptable light tube φ7 FC connector
36 φ10
φ10 36
5000+200 0
20
25 μm to 2200 μm
10 μm to 900 μm
16.7 ms/point
25 μm to 2900 μm
10 μm to 1200 μm
22.2 ms/point
High speed measurement of film, glass and waferHigh speed measurement of film, glass and wafer
Specification
������� ����� �� C11011
The Optical MicroGauge C11011 series is a film thickness measurement system utilizing laser interferometry. High speed measurement at 60 Hz, applicable to in-line measurement in production. In addition, an optional mapping system can measure the thickness distribution of a given specimen. The C11011 can be used in a wide range of applications, such as product manufacture process monitoring or quality control.
Measurablerange
25 μm 2200 μm 2900 μmSiO2
10 μm 900 μm 1200 μm
*1: SiO2 film measurement features*2: Si film measurement features*3: Standard deviation when a 6 μm thick silicon film was measured*4: Optional model with 1,000 mm working distance is available. (C11011-01WL)*5: During continuous data acquisition but excludes analysis time
Type number C11011-01WC11011-01*1
*2
*4
*4
*3
*3
*5
Repeatability
Accuracy
Light source
Spot size
Working distance
Number of measurable layers
Analysis
Measurement time
External control function
Interface
Power requirement
Power consumption
Measurement filmthickness
Refractive index of glass: 1.5
Refractive index of silicon: 3.67
1 μm 10 μm 100 μm 1 mm
Feature
1
Feature
2
Feature
3
Measurement of non-transparent (white color)sample by infrared photometry
High speed measurement at 60 Hz
Measurement of pattern-formed wafer orwafer with protective film
Feature
4
Feature
5
Feature
6
Long working distance
Mapping function
External control available
High speed measurement model compatible with in-line systems, capable of measuring up to 2.9 mm
Thick film measurementwith high speed
WaferSi for PV panel
Wafer
Semiconductor
SiC coat, Si coat, Wet coat, Polished Si, Optical disk
Optical film
Film
AR coating, PET, Coating layer, Coating film, Evaporation film, Functionality filmAcrylic resin, Video head
Panel
FPD
Cell gap, Glass thickness, DLC, High-function film
100 nm
< 500 μm : ±0.5 μm, 500 μm : ±0.1 %
Infrared LD (1300 nm)
φ 60 μm
155 mm
One layer (Multilayer measurements are possible.)
Peak detection
RS-232C / PIPE
USB 2.0
AC 100 V to AC 240 V, 50 Hz/60 Hz
50 VA
Si
21
C11011-01, -01W standard system
Configuration example
StandardOption
StandardOption
C11011-01, -01W mapping system for measuring thickness distribution
(Unit: mm)Dimensional outline
Main unit (Approx. 8.5 kg) Probe head: A8653-01, -02
Thickness distributionof a wafer
Measurement of bonded wafer(multilayer)
In-situ monitoring of thickness (during wet etching)Use laser interferometry to measure film thickness.
Optical fiber
Probe headA8653-01
Etcher or Grinder
Sample
RS-232C / PIPE
Optical MicroGaugeC11011-01, -01W
USB 2.0
Data analyzerC9025-02
Wafer mapping software
Optical fiber
Optical MicroGaugeC11011-01, -01W
Wafer mapping software
Mapping stageC8126-021,-22
USB 2.0 / RS-232C Data analyzer
C9025-11
USB 2.0
The probe head irradiates sample with near infrared light which reflects back from the film front surface. Some of the light transmits through the film and reflects back from the boundary on the opposite side. The controller internally processes each reflected light to detect the position where light was reflected or in other words the position on the film boundary. The controller then calculates the film thickness from the distance between the detected peaks.
Probe head
Distance between the
peaks indicates film
thickness
Reflected light from the boundary
Incident light
Film
SubstrateDisplay from 70 μm to 76 μmSample: 8-inch Si bare wafer (Protective film / after grinding process)
Principle
Option
Data analyzer
Data analyzer C9025-01, -11[Desktop]For the standard system: C9025-01For the mapping system: C9025-11
Data analyzer C9025-02, -12[Laptop]For the standard system: C9025-02For the mapping system: C9025-12
Probe head A8653-02This probe head is surface-treated to make itacid-resistant and is recommended for use whilemounted in wet etching equipment.
Horizontal setting optics A9925-01This optical system is designed to connect tothe probe head and is useful when installing theprobe head in narrow locations with little workingdistance.
Analysis method
Measurement data
500
200
200
400
400100 3000
300
100
Time (second)
Thic
knes
s (μ
m)
0
Thickness measurement data
412±1
123.
5±1
5.9±
1383±1
OPTICAL MICRO GAUGE C11011
POWER
φ19±
0.3
WD=155±0.2 95.8±0.2
φ15±
0.3
13.9 Optical fiber (4 m)
φ34±
0.5
OPTICAL MICRO GAUGE C11011
Power
Probe headA8653-01
Mapping stage C8126-21, -22Measurement time: 2 s/point
Stage movement resolution: 0.1 mmStage movement repeatability: ±0.01 mm
Measurement area: to 140 mm square (C8126-21) (4 inch to 8 inch wafer) : to 200 mm square (C8126-22) (4 inch to 12 inch wafer)
22
Specification
������
����� ��� C8126
Type number0.1 mm
±0.01 mm
AC100 V to AC117 V, AC200 V to AC240 V , 50 Hz/60 Hz
C8126-22, -32: 170 VA
12 inch Stage unit for C8126-22, -32: 940 mm(W) × 595 mm(H) × 750 mm(D) Approx. 82 kg
Mapping thickness distribution of wafer and thin film Compatible with Optical NanoGauge or Optical MicroGauge
The Mapping Stage C8126 series is a mapping system that performs wafer and film in-plane thickness distribution measurement when combined with any one of the various Optical Gauge series. The C8126 can be used for examination of in-plane uniformity of etching and grinding property and for quality control purpose.
Type numberWafer (inch) Film (mm)
C11011-01C11011-01W
C10178-01C10178-03
4 to 8
4 to 12
4 to 8
4 to 12
< 140 × 140
< 200 × 200
< 140 × 140
< 200 × 200
Measurable range
C8126-21
C8126-22
C8126-31
C8126-32*For more details of the specification, please contact us.
*For more details of the specification, please contact us.*1: Either 100 V system or 200 V system can be selected.*2: For C8126-21, -31 details of the specification, please contact us. *3: For C8126-21, -31 details of the specification, please contact us.
Compatible withNanoGauge / MicroGauge
Feature
1
Feature
2
Feature
3
Thickness distribution measurement
Mapping thickness distribution of pattern-formed wafer
Mapping thickness distribution of pattern-formed wafer with protective film
C8126-21, -22 (For C11011 series)
StandardOption
StandardOption
C8126-31, -32 (For C10178 series)
Optical fiber
Stage unit
Optical MicroGauge C11011-01,-01W
USB 2.0
Probe headA8653-01
Wafer
Wafer mapping software
Data analyzerInterface
(USB 2.0 / RS-232C)
Stage movement resolution
Stage movement repeatability
Power requirement
Power consumption
Dimensional outline / Weight
C8126-21, -22, -31, -32
*1
Optical NanoGauge C10178-01, -03
Film thicknessmeasurement software
USB 2.0
Data analyzer
Interface(USB 2.0 / RS-232C)
Stage unit
Halogen light sourceL6758-11
SIGNAL INPUT
PHOTONIC MULTI-CHANNEL ANALYZER C10027
Power
*2
*3
23
StandardOption
200 nm to 950 nm
± 0.75 nm
< 2 nm
Approx. 70 VA
300 nm to 800 nm
±1.0 nm
< 3 nm
Approx. 50 VA
Type number C10346-02C10346-01
Detect in-process plasma light emission over a wide spectrum range in real time during etching, PVD and CVD
The C10346 is a monitoring system that detects wide spectrum plasma emission during the process of etching, PVD and CVD in semiconductor manufacturing.With its various analysis functions, it can be used for setting up end-point detection conditions and automatic detection of etching and cleaning, estimation of plasma species and monitoring (plasma) contamination and abnormal discharges.
Feature
1
Feature
2
Feature
3
Simultaneous measurement of widespectrum
Real time plasma (emission) measurement
Easy measurement using optical fiber
C10346 standard system
USB 2.0Optical
fiber probe
Multiband plasma-process monitorC10346-01, -02
Data acquisition softwareU9046
Data analyzer
Wavelength range
Wavelength accuracy
Wavelength resolution (FWHM)
Power requirement
Power consumption
Analog output terminal
Fiber probe
Interface
Digital output terminal(Determinate signal output)
Digital output terminal(Busy signal)
Digital input terminal (Starting measurement trigger signal)
AC 100 V to AC 240 V, 50 Hz / 60 Hz
2 channel, 0 V to 10 V
SMA
USB 2.0 Type B
TTL maximum 5 channel
TTL 1 channelUsing TTL 4 channel
TTL 1 channelUsing TTL 5 channel
Benefits
Easy parameter evaluation to detect etchingand cleaning endpointOptimal condition (or trigger) used for defining endpoint can beset for individual process by analyzing and simulating the timingat which etching and cleaning end.
Automatic detection of etching and cleaningendpointBoosts the process throughput and reduces device damage byautomatically detecting the endpoint for each ware by utilizingendpoint detection condition optimized for each process.
Estimation of plasma species during processPlasma spectrum library allows estimation of plasma speciesin a process.
������� �����
�������� ������ � ����� ��� C10346-01, -02
SIGNAL INPUT
C10346PLASMA PROCESS MONITOR
★ Product and software package names noted in this documentation are trademarks or registered trademarks of their respective manufacturers.● Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult your local sales representative.● Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications and external
appearance are subject to change without notice.
© 2014 Hamamatsu Photonics K.K.
Cat. No. SSMS0043E05MAR/2014 HPKCreated in Japan
www.hamamatsu.comHAMAMATSU PHOTONICS K.K.HAMAMATSU PHOTONICS K.K., Systems Division812 Joko-cho, Higashi-ku, Hamamatsu City, 431-3196, Japan, Telephone: (81)53-431-0124, Fax: (81)53-435-1574, E-mail: [email protected].: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected]: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected]: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777 E-mail: [email protected] Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 SE-164 40 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected]: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39)02-93581733, Fax: (39)02-93581741 E-mail: [email protected]: Hamamatsu Photonics (China) Co., Ltd.: B1201 Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected]