March 2015 DocID027383 Rev 3 1/17

This is information on a product in full production. www.st.com

STH6N95K5-2

N-channel 950 V, 1 Ω typ., 6 A MDmesh™ K5 Power MOSFET in a H²PAK-2 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code VDS RDS(on) max. ID PTOT

STH6N95K5-2 950 V 1.25 Ω 6 A 110 W

Industry’s lowest RDS(on) x area

Industry’s best figure of merit (FoM)

Ultra low gate charge

100% avalanche tested

Zener-protected

Applications Switching applications

Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Table 1: Device summary

Order code Marking Package Packaging

STH6N95K5-2 6N95K5 H²PAK-2 Tape and reel

D(TAB)

G(1)

S(2, 3)

AM15557a.v3

Contents STH6N95K5-2

2/17 DocID027383 Rev 3

Contents

1 Electrical ratings ............................................................................. 3

2 Electrical characteristics ................................................................ 4

2.1 Electrical characteristics (curves) ...................................................... 6

3 Test circuits ..................................................................................... 9

4 Package mechanical data ............................................................. 10

4.1 Package mechanical data ............................................................... 11

5 Packing information ...................................................................... 14

6 Revision history ............................................................................ 16

STH6N95K5-2 Electrical ratings

DocID027383 Rev 3 3/17

1 Electrical ratings Table 2: Absolute maximum ratings

Symbol Parameter Value Unit

VGS Gate-source voltage ± 30 V

ID Drain current at TC = 25 °C 6 A

ID Drain current at TC = 100 °C 3.8 A

IDM(1) Drain current (pulsed) 24 A

PTOT Total dissipation at TC = 25 °C 110 W

IAR(2) Max current during repetitive or single pulse avalanche 3 A

EAS(3) Single pulse avalanche energy 90 mJ

dv/dt(4) Peak diode recovery voltage slope 4.5 V/ns

dv/dt(5) MOSFET dv/dt ruggedness 50 V/ns

Tj Operating junction temperature - 55 to 150 °C

Tstg Storage temperature

Notes:

(1)Pulse width limited by safe operating area. (2)Pulse width limited by Tjmax. (3)Starting Tj = 25 °C, ID = IAS, VDD = 50 V. (4)ISD ≤ 6 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS. (5)VDS ≤ 760 V.

Table 3: Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 1.14 °C/W

Rthj-pcb(1) Thermal resistance junction-pcb max 30

Notes:

(1)When mounted on 1 inch² FR-4 board, 2 oz Cu.

Electrical characteristics STH6N95K5-2

4/17 DocID027383 Rev 3

2 Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4: On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown

voltage VGS = 0 V, ID = 1 mA 950

V

IDSS Zero gate voltage drain

current

VGS = 0 V, VDS = 950 V

1 µA

VGS = 0 V, VDS = 950 V,

Tc = 125 °C 50 µA

IGSS Gate body leakage current VDS = 0 V, VGS = ± 20 V

± 10 µA

VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V

RDS(on) Static drain-source on-resistance

VCS = 10 V, ID = 3 A

1 1.25 Ω

Table 5: Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance

VGS = 0 V, VDS = 100 V, f = 1 MHz

- 450 -

pF Coss Output capacitance - 30 -

Coss Output capacitance - 1.6 -

Co(tr)(1)

Equivalent

capacitance, time-

related VGS = 0 V, VDS = 0 to 760 V

- 45 -

pF

Co(er)(2)

Equivalent

capacitance, energy-

related

- 19 -

RG Intrinsic gate

resistance f = 1 MHz, ID =0 A - 7 - Ω

Qg Total gate charge VDD = 760 V, ID = 6 A, VGS = 10 V (see Figure 16: "Gate charge test circuit" )

- 13 -

nC Qgs Gate-source charge - 3 -

Qgd Gate-drain charge - 7 -

Notes:

(1)Time-related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS. (2)Energy-related is defined as a constant equivalent capacitance giving the same stored energy as Coss when

VDS increases from 0 to 80% VDSS.

Table 6: Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time

VDD = 475 V, ID = 3 A,

RG = 4.7 Ω, VGS = 10 V

- 12 - ns

tr Rise time - 12 - ns

td(off) Turn-off-delay time - 33 - ns

tf Fall time - 21 - ns

STH6N95K5-2 Electrical characteristics

DocID027383 Rev 3 5/17

Table 7: Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current

-

6 A

ISDM(1) Source-drain current (pulsed)

-

24 A

VSD(2) Forward on voltage ISD = 6 A, VGS = 0 -

1.6 V

trr Reverse recovery time ISD = 6 A,

di/dt = 100 A/µs

VDD = 60 V

- 372

ns

Qrr Reverse recovery charge - 4

µC

IRRM Reverse recovery current - 22

A

trr Reverse recovery time ISD = 6 A,

di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

- 522

ns

Qrr Reverse recovery charge - 5

µC

IRRM Reverse recovery current - 20

A

Notes:

(1)Pulse width limited by safe operating area (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Table 8: Gate-source Zener diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0 30 - - V

The built-in back-to-back Zener diodes have specifically been designed to enhance the device's ESD capability. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.

Electrical characteristics STH6N95K5-2

6/17 DocID027383 Rev 3

2.1 Electrical characteristics (curves)

Figure 2: Safe operating area

Figure 3: Thermal impedance

Figure 4: Output characteristics

Figure 5: Transfer characteristics

Figure 6: Gate charge vs gate-source voltage

Figure 7: Static drain-source on-resistance

VDS

(V)

ID

(A)

1001010.10.01

0.1

1

10

100µs

1ms

10msO

pera

tion

in th

is a

rea

is lim

ited

by m

ax R

DS(o

n)

Tj=150°C

TC=25°C

Single pulse

GIPG220120151710ALS CG20930

tp

Zth = k R

thj-C

δ = tp/ Ƭ

10-2

10-1

K

Ƭ

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.01

δ = 0.02δ = 0.05

SINGLE PULSE

Zth = k R

thj-C

δ = tp/ Ƭ

tpƬ

tp(s)10-110-210-310-410-5

6

4

2

0

8

10

5V

6V

7V

VGS=10V

12

ID

(A)

0 5 10 15 20 25 VDS

(V)

AM07108v1 ID

6

4

2

0

(A)

8

VDS

=15V

VGS

(V)86420

AM07109v1

VGS

6

4

2

0

(V)

8

10

12

300

200

100

0

400

500

VDS

(V)

600

700

Qg(nC)

VDD

=760V

ID=6A

VDS

14121086420

AM07110v1 RDS(on)

0.93

0.91

0.89

0.87

(Ohm)

0.95

0.97

0.99

1.01

1.03

ID(A)

VGS

=10V

3.02.52.01.51.00.5

AM07111v1

STH6N95K5-2 Electrical characteristics

DocID027383 Rev 3 7/17

Figure 8: Capacitance variations

Figure 9: Output capacitance stored energy

Figure 10: Normalized gate threshold voltage vs temperature

Figure 11: Normalized on-resistance vs temperature

Figure 12: Source-drain diode forward characteristics

Figure 13: Normalized V(BR)DSS vs temperature

C

1000

100

10

1

(pF)

Ciss

Coss

Crss

VDS

(V)1001010.1

AM07112v1

4

0

8

12

16

20

VDS

(V)

Eoss

(µJ)

8006004002000

AM07113v1

VGS(th)

0.7

0.6

0.5

0.4

(norm)

0.8

0.9

1.0

1.1

1.2

TJ(°C)

ID=100 µA

1257525-25-75

AM07114v1 RDS(on)

2.0

1.5

1.0

0.5

(norm)

2.5

0T

j(°C)1257525-25-75

VGS

=10V

AM07115v1

0.55

0.65

0.75

0.85

0.95

ISD

(A)6.05.04.03.02.0

VSD

(V)

0.7

0.8

0.9

1.0

1.1

1.2

Tj(°C)

ID=1 mA

V(BR)DSS

(norm)

1257525-25-75

AM07116v1

Electrical characteristics STH6N95K5-2

8/17 DocID027383 Rev 3

0

20

40

60

80

100

ID=3 A

VDD

=50 V

Tj(°C)

EAS

(mJ)

140120100806040200

AM07117v1

Figure 14: Maximum avalanche energy vs starting Tj

STH6N95K5-2 Test circuits

DocID027383 Rev 3 9/17

3 Test circuits Figure 15: Switching times test circuit for resistive

load

Figure 16: Gate charge test circuit

Figure 17: Test circuit for inductive load switching and diode recovery times

Figure 18: Unclamped inductive load test circuit

Figure 19: Unclamped inductive waveform

Figure 20: Switching time waveform

AM01469v1

VDD

47 kΩ1 kΩ

47 k Ω

2.7 k Ω

1 kΩ

12 V

Vi ≤ VGS

2200 μ F

PW

I G = CONST100 Ω

100 nF

D.U.T.

VG

AM01470v1

A

D

D.U.T.

SB

G

25

A A

BB

RG

G

FAST

DIODE

D

S

L=100 µH

µF

3.3 1000µF

VDDΩ

D.U.T.

V(BR)DSS

VDD

VDD

VD

IDM

ID

AM01472v1 AM01473v10

VGS

90%

VDS

ton

90%

10%

90%

10%

td(on)

tr

t

td(off)

tf

10%

0

off

Package mechanical data STH6N95K5-2

10/17 DocID027383 Rev 3

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

STH6N95K5-2 Package mechanical data

DocID027383 Rev 3 11/17

4.1 Package mechanical data

Figure 21: H²PAK-2 outline

8159712_D

Package mechanical data STH6N95K5-2

12/17 DocID027383 Rev 3

Table 9: H²PAK-2 mechanical data

Dim. mm

Min. Typ. Max.

A 4.30

-

4.80

A1 0.03 0.20

C 1.17 1.37

e 4.98 5.18

E 0.50 0.90

F 0.78 0.85

H 10.00 10.40

H1 7.40 7.80

L 15.30 15.80

L1 1.27 1.40

L2 4.93 5.23

L3 6.85 7.25

L4 1.5 1.7

M 2.6 2.9

R 0.20 0.60

V 0° 8°

STH6N95K5-2 Package mechanical data

DocID027383 Rev 3 13/17

Figure 22: H²PAK-2 recommended footprint

8159712_D

Packing information STH6N95K5-2

14/17 DocID027383 Rev 3

5 Packing information Figure 23: Tape outline

STH6N95K5-2 Packing information

DocID027383 Rev 3 15/17

Figure 24: Reel outline

Table 10: Tape and reel mechanical data

Tape Reel

Dim. mm

Dim. mm

Min. Max. Min. Max.

A0 10.5 10.7 A

330

B0 15.7 15.9 B 1.5

D 1.5 1.6 C 12.8 13.2

D1 1.59 1.61 D 20.2

E 1.65 1.85 G 24.4 26.4

F 11.4 11.6 N 100

K0 4.8 5.0 T

30.4

P0 3.9 4.1

P1 11.9 12.1 Base quantity 1000

P2 1.9 2.1 Bulk quantity 1000

R 50

T 0.25 0.35

W 23.7 24.3

A

D

B

Full radius

Tape slot

In core for

Tape start

G measured

At hub

C

N

REE L DIMENS IONS

40 mm min.

Access hole

At slot location

T

Revision history STH6N95K5-2

16/17 DocID027383 Rev 3

6 Revision history Table 11: Document revision history

Date Revision Changes

23-Jan-2015 1 First release.

04-Feb-2015 2 Updated Section 2: "Electrical characteristics"

12-Mar-2015 3 Document status changed from preliminary to producion data.

STH6N95K5-2

DocID027383 Rev 3 17/17

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