PP Phun Xa Magnetron

Phng php Tng hp mng mng

- Phn x magnetron

Cc Phng Php Tng hp v Phn tch Vt liu

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L k thut ch to mng mng da trn nguyn l truyn ng

nng bng cch dng cc ion kh him c tng tc di in

trng bn ph b mt vt liu t bia vt liu, truyn ng nng

cho cc nguyn t ny bay v pha v lng ng trn .

Phn x (Sputtering):

One Chun b vt liu phn x ( Bia Target )

Two Chun b vt liu ph mng ( - Substrate ).

Three To mi trng chn khng.

Four Phn x.

Cc giai on c bn

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Gm (dn in/ in mi)

Chun b Vt liu phn x

Kim loi/ Hp kim

Bia

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Chun b Vt liu ph mng

Mt s loi vt liu dng lm

ph mng

Lam thy tinh (glass)

Wafer Silic (Si)

Inox

S, gch men

Polymer

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Phng php Phn x magnetron

Chun b Vt liu ph mng

Quy trnh x l trc khi ph mng

X l th

-Dng kim: NaOH, nc ra sunplay, -Dng axit: HF, HCL, -Dng sng siu m (my siu m) ra. - Ra li bng nc sch (nc ct) - Sy kh Lm sch cht hu c b mt .

X l tinh

Lm sch b mt bng phng in trong chn khng trc khi cho ph mng.

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To mi trng chn khng

H thng bm dng to mi trng chn khng

Bm s cp

- Ht kh hay hi t th tch cn ht,

bt u t p sut kh quyn.

- Cc loi bm s cp: Bm quay du,

Bm Booster (Roots),

To chn khng ban u cho bm th

cp hot ng.

Bm th cp

-Lm vic ch vi iu kin khi trong

th tch t c chn khng ban u

(p sut khi ng ~ 10-2 torr).

- Cc loi bm th cp: Bm phn t

(Turbo), Bm khuch tn,

To chn khng cho qu trnh phn x

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n v p sut (n v o chn khng)

pascal

(Pa)

bar

(bar)

atmtphe

k thut

(at)

atmtphe

(atm)

torr

(Torr)

pao (p sut) trn mt ins

vung

(psi)

1 Pa 1

N/m2 105 1.0197105 9.8692106 7.5006103 145,04106

1 bar 100000 106 dyn/cm2 1,0197 0,98692 750,06 14,504

1 at 98.066,5 0,980665 1 kgf/cm2 0,96784 735,56 14,223

1 atm 101.325 1,01325 1,0332 1 atm 760 14,696

1 torr 133,322 1,3332103 1,3595103 1,3158103 1 Torr;

1 mmHg 19,337103

1 psi 6.894.76 68,948103 70,307103 68,046103 51,715 1 lbf/in2

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Bm chan khong

Vung lam viec cua cac bm chan khong

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p sut bung < 510-6 torr

p sut nn 510-5 torr p sut phn x 310-3 torr Kh phn x N2/Ar ; N2O/Ar ph Thy tinh; Corning 7059 Khong cch bia- 5 cm Cng sut phn x RF 100W

Nhit Thi gian phn x

250oC 15 pht

Bng 1. Cc thng s to mng ZnO:N

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Pha rn

(Bia-Target)

Pha hi Pha hi

Pha rn (Mng - Film)

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Qu trnh phn x

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Nguyn l: l qu trnh truyn ng nng.

Vt liu ngun c to thnh dng cc tm bia v c t

ti in cc (thng l catot), trong bung c ht chn

khng cao v np kh him vi p sut thp (c 102 MBar).

Di tc dng ca in trng, cc nguyn t kh him b ion

ha, tng tc v chuyn ng v pha bia vi tc ln v bn

ph b mt bia, truyn ng nng cho cc nguyn t vt liu ti

b mt bia.

Cc nguyn t c truyn ng nng s bay v pha v

lng ng trn . Cc nguyn t ny c gi l cc nguyn t

b phn x.

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S phn x phn ng ca TiN

S phn x Magnetron



Nht plasma trn b mt cathode hay bia

phn x

Da vo s kt hp ca in trng v t trng

Cng t trng c iu chnh (500 2000G) sao cho cc in t b tc ng mnh cn cc ion th khng.

Cc in t thc hin cc chuyn ng cycloid trong in trng v t trng vung gc h s ion ha rt cao.

Phng in magnetron c th duy tr p sut rt thp (< 10-2 Pa) v mt dng in cao hn rt nhiu so vi phng in khng c t trng.

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H magnetron cn bng H magnetron khng cn bng

B (hng v)

T trng khp kn

Cc e chu tc dng ca t trng ngang

e ch yu chuyn ng gn bia

t b e va p

t b t nng

Thch hp to mng cho cc loi khng chu c T0 cao: nha, giy,

T trng khng khp kn

Cc e t chu tc dng ca t trng ngang

e theo in trng n vi v ln

b nhiu e va p mnh

b t nng

Thch hp to cc mng yu cu T0 cao

in trng

S

N N

S

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Hnh 1. M t h phn x magnetron phng

DC

P = 1- 10 mtorr

N = 1012 1015 cm-3

ne = 10

10 1012 cm-3

Te = 2 5 eV

T trng gi cc in t trong vng

plasma c dng ng hm hnh tr

trn b mt bia to ra s n mn

khng u ca bia phn x.

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Phng in DC da trn s sinh ra in t th cp cathode, do in th ln ca bia l cn thit duy tr plasma v pht x in t tng gn tuyn tnh vi vn tc ion bn ph

(a)

(b)

Hnh 2. S phn b th trong phn x

magnetron cn bng ch DC v RF

Bia

Bia

Plasma RF c duy tr bi s ion ha ca in t dao ng trong th tch plasma. Cc in t c th theo kp tn s RF 13.56 MHz trong khi ion th khng do qun tnh ln.

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Hnh 3. Th phn x cathode trong

magnetron DC v RF theo cng sut phng

in i vi bia ZnO p sut 0.8 Pa

-Trong phng in RF th bia phn x

thp hn.

- Tuy nhin, s by cc in t trn b mt bia li khng tt nh

trong ch DC.

- Mt plasma trn cao hn so vi trng hp DC.

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- Phn x DC

cho vn tc ph cao

hn t 1.5 n 2 ln so

vi RF cng cng sut.

- i vi DC vn tc ph

bt u tng t cng sut

bng khng.

- Trong khi RF ta c

th quan st thy cng

sut ngng khong trn

10W, do th phng in

thp khng

phn x. Hnh 4. Vn tc lng ng trong

magnetron DC v RF theo cng sut

phng in

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Vn tc ph

c xc nh bi

nng lng ion

bia v nng lng

ca nguyn t Ar

phn x trong ch

DC cao hn

so vi RF.

Hnh 5. S ph thuc ca vn tc ph

theo nng lng ion bn ph

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Hnh 2.8 S ph thuc ca cng sut nhit

trn trong phn x DC v RF bia ZnO

vo: a). p sut lm vic

b). Cng sut phng in

Cng sut nhit trn tng t l theo cng sut phng in.

Trong trng hp RF gn nh c lp vi p sut, th trong trng hp DC cng sut nhit gim mnh khi tng p sut.

Nhit sinh ra trn trong qu trnh phn x ch RF s cao hn so vi DC.

Ngun nhit cung cp cho trong phn x RF ch yu t cc ht trong plasma, ch khng phi duy nht t cc ht phn x t bia.

(RF) ng gp nhit ln gy bi cc ht t plasma sau khi vt qua rng rt nh ca v m khng va chm nn c lp vi p sut.

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(DC) ng gp nhit ln ch yu gy bi cc ion Ar c gia tc trong vng st th cathode, b phn x v trung ha, sau i v pha .

Cc ht trung ha chu cc va chm vi phn t kh v b nhit ha trong qung ng t bia n nn cng sut nhit trn ph thuc vo p sut.

u im ca phng php phn x magnetron

Nhit thp, c th xung n nhit phng

bm dnh tt ca mng trn

Vn tc ph cao, c th t 12 m/pht

ng nht cao v dy, mt khi lng mng cao, gn vi mt

khi

D dng iu khin v tnh lp li cao trong qu trnh ch to mng

Cc hp kim v hp cht ca cc vt liu vi p sut hi rt khc

nhau c th d dng phn x

Bng phn x phn ng trong hn hp kh, nhiu hp cht c th

c ph t vt liu n cht

Phng php c chi ph khng cao

C kh nng ph mng trn din tch rng, c th t 3m x 6m

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PP Phun Xa Magnetron