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SuperKEKB 3nd open meeting, July 7-9. 2009 Hans- Günther Moser MPI für Physik PXD Summary Other talks in software, SVD and DAQ sessions

PXD Summary

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PXD Summary. Other talks in software, SVD and DAQ sessions. SOI Detectors. Yasuo Arai. *1st MPW: submission on 7th Aug. 2009 *2nd MPW: submission on end. Oct. 2010 *3rd MPW: submission on beg. Jan. 2010. - PowerPoint PPT Presentation

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Page 1: PXD Summary

SuperKEKB3nd open meeting,

July 7-9. 2009

Hans-Günther MoserMPI für Physik

PXD Summary

Other talks in software, SVD and DAQ sessions

Page 2: PXD Summary

SuperKEKB3nd open meeting,

July 7-9. 2009

Hans-Günther MoserMPI für Physik

SOI Detectors

Yasuo Arai

*1st MPW: submission on 7th Aug. 2009

*2nd MPW: submission on end. Oct. 2010

*3rd MPW: submission on beg. Jan. 2010

*1st MPW: submission on 7th Aug. 2009

*2nd MPW: submission on end. Oct. 2010

*3rd MPW: submission on beg. Jan. 2010

We have received several contacts from foreign labs ;

India, UK, Spain, USA, Poland ...

We have received several contacts from foreign labs ;

India, UK, Spain, USA, Poland ...

This possibility has been announced by the facilitation group for monolithic and vertically integrated pixel detectors (Marcel Demarteau, Junji Haba, Hans-Günther Moser and Valerio Re). Thus collaborations for R&D should be initiated pushing progress for such detectors

Page 3: PXD Summary

SuperKEKB3nd open meeting,

July 7-9. 2009

Hans-Günther MoserMPI für Physik

SOI R&D at KEK

Laser test of SBPIX148x48 pixels of 50x50µm²

BPW

B (~1E12 cm-2)Without BPWWithout BPW With BPWWith BPW

Vback Up

New: buried p-well to reduce back gate effect:

Page 4: PXD Summary

SuperKEKB3nd open meeting,

July 7-9. 2009

Hans-Günther MoserMPI für Physik

DEPFET: Ringberg Workshop

http://indico.mppmu.mpg.de/indico/conferenceDisplay.py?confId=466

Page 5: PXD Summary

SuperKEKB3nd open meeting,

July 7-9. 2009

Hans-Günther MoserMPI für Physik

DEPFET-Collab. @ Belle-II

Original Collaboration: DEPFET pixel detector @ ILC (since 2002)now: Unite efforts to deliver a REAL PXD by 2013 for Belle-II

University of Barcelona, Spain University Ramon Llull, Barcelona, Spain Bonn University, Germany Heidelberg University, Germany Giessen University, GermanyGöttingen University, Germany Karlsruhe University, Germany IFJ PAN, Krakow, Poland MPI Munich, Germany Charles University, Prague, Czech Republic IGFAE, Santiago de Compostela University, Spain

IFIC, CSIC-UVEG, Valencia, Spain

with important help from Hawaii, KEK, Vienna

DEPFET@Belle-II

New management:

IB- Board

Project LeaderC. Kiesling

Technical Coord.H.-G. Moser

„Integration Coord.“(Liaison @ KEK)

Page 6: PXD Summary

SuperKEKB3nd open meeting,

July 7-9. 2009

Hans-Günther MoserMPI für Physik

Funding

Page 7: PXD Summary

SuperKEKB3nd open meeting,

July 7-9. 2009

Hans-Günther MoserMPI für Physik

Schedule

Page 8: PXD Summary

SuperKEKB3nd open meeting,

July 7-9. 2009

Hans-Günther MoserMPI für Physik

Sensor Production Status

Status at 2nd Belle II meeting (March): SOI wafer bonding at Tracit, France

30 SOI wafers received, processing in our own lab has startedPresently: cleaning, oxygenation, alignment mask, first implantation: next week. Processed are 6 wafers + dummies

Page 9: PXD Summary

SuperKEKB3nd open meeting,

July 7-9. 2009

Hans-Günther MoserMPI für Physik

Wafer layout

Small test matrices with various pixel sizes;50 µm x 50 µm..50 µm x 175 µm

Technology variations(gate length L)

4 ½ module large matrices with most likely pixel sizes

5cm: 50µm x 75µm5cm: 50µm x 100µm3.5cm 50µm x 50µm3.5cm 50µm x 75µm

Important for timing!

Page 10: PXD Summary

SuperKEKB3nd open meeting,

July 7-9. 2009

Hans-Günther MoserMPI für Physik

DEPFET Readout and Control ASICs

15mm

clear[n]gate[n]

clear[n+1]gate[n+1]

drain lines

cross section(height not to scale)

50µm

~75

µm

132

mm

DCD chips (analog)

DHP chips (digital)

Switcher chips (line driver)

flex cable

thinned active pixel area

98 m

m

DCD, Switcher: HeidelbergDHP: Bonn, Barcelona

Page 11: PXD Summary

SuperKEKB3nd open meeting,

July 7-9. 2009

Hans-Günther MoserMPI für Physik

DCD Tests

Works almost at design frequency (540 MHz: 88ns line rate)(works still at nominal 600 MHz, but with higher noise)Noise level: 90nA with 450 pA/e: 200 e ENC (S/N = 20:1)Some bugs discovered, improved version will be submittedPush DEPFET gain (600 pA/e ?)

Manuel Koch, Bonn

Page 12: PXD Summary

SuperKEKB3nd open meeting,

July 7-9. 2009

Hans-Günther MoserMPI für Physik

Summary: ASICs»- DCD prototype chip has been tested with test signals that correspond to DEPFET

currents and irradiated up to 7 Mrad.

» The chip works fine and has high enough conversion speed.

» Operation with matrices still to be tested – we do not expect problems.

» Only „fine tuning“ of the design for the super KEKB operation is necessary.

»- Switcher prototype with LV transistors has been tested and irradiated up to 22 MRad.

» The chip works fine and has adequate speed for Belle II operation.

»- Another prototype with HV transistors has been designed and tested.

»- The irradiation of the chip still has to be done but the basic and most critical part (high-voltage NMOS) has been irradiated up to 600 KRad and no damage has been observed.

»- DHP chip will be designed using digital design tools in intrinsically radiation hard 90 nm technology.

»- Choice between 4 different bumping technologies – advantages and disadvantages still to be evaluated

»Planned submissions:

• Switcher: October 09

• DCD: September 09

• DHP: October 09

Page 13: PXD Summary

SuperKEKB3nd open meeting,

July 7-9. 2009

Hans-Günther MoserMPI für Physik

Consequences of nano beam

Less background? Always welcome, but to be confirmed

Smaller beam pipe: 1.5cm -> 1.0cm

1cm beam pipe allows:

1st layer closer to the beam => better resolutionSmaller modules with smaller pitch (in z) => better resolution

Smaller modules: better use of wafer size:higher yieldless wafers needed?more space for electronics and cooling

More freedom to choose layer spacingoptimize resolutionimprove mechanical layout

(symmetric arrangement?)(more room for cooling/services?)

Major work needed to find optimum!Need final geometry of IR (and beam pipe outer radius) soon!

Page 14: PXD Summary

SuperKEKB3nd open meeting,

July 7-9. 2009

Hans-Günther MoserMPI für Physik

Mechanics

Frank Simon:

Page 15: PXD Summary

SuperKEKB3nd open meeting,

July 7-9. 2009

Hans-Günther MoserMPI für Physik

Mechanics

New simpler concept for supportMore space for services and air flowIntegrated cooling channelsSliding module mount (termal expansion)

Page 16: PXD Summary

SuperKEKB3nd open meeting,

July 7-9. 2009

Hans-Günther MoserMPI für Physik

Cooling

Thomas Müller (work done in Karlsruhe and Valencia)

• DCDs always active: The hottest points• 2 Switchers active• 2 pixel stripes active

We need to cool down the

DCD

Power: ca 7W per module half6 W: ASIC on end1 W: sensor area

Total ~ 300 W

Needs both liquid and air cooling

Highly thermally conductive materials needed to get heat out of moduleUnder study: TPG (thermally pyrolythic graphite)CVD diamond

Work started, tooling to be set up (simulation, mock ups)

Page 17: PXD Summary

SuperKEKB3nd open meeting,

July 7-9. 2009

Hans-Günther MoserMPI für Physik

Simulations

Kolja Prothman (work done in Munich and Prague)

Important tool for parameter optimisation (pitch, layer radius, pixel arrangments

Simulated is PXD with active and passive material

SVD

and CDC

Some examples

Page 18: PXD Summary

SuperKEKB3nd open meeting,

July 7-9. 2009

Hans-Günther MoserMPI für Physik

Simulations

Variable pitch and bricking not usefull

Smaller pitch with longer readout time improves IP(z) resolution considerably

Performance better than Belle SVD

Most work done assuming 1.5 cm IR

Work on nano beam geometry started => should be even better

Page 19: PXD Summary

SuperKEKB3nd open meeting,

July 7-9. 2009

Hans-Günther MoserMPI für Physik

Test Beam

SC 0: 2 5x25x4mmSC 1: 4 x4 x4m m

-12 5 0 79 21 3 40 8 55 1 63 1 72 2Po sit ion

[m m] :0 1 2 3 4 5Po sit ion :

Bea m

D epfe t2: M E, C C G, PXD 5, S9 0K02 , 0.0 32x0.0 24m m

D epfe t6: M E, C C G, PXD 5,S9 0I03 , 0.0 24x0.0 24m m

D epfe t14: ME, CC G, PXD 5, 9 0K02 , 0.0 32x0.0 24m m

D epfe t7: M E, C C G, PXD 5, 9 0I00 , 0.0 32x0.0 24m m

D epfe t5: M E, C C G, PXD 5, 1 4B, S9 0I00 , 0.0 32x0.0 24m m

D epfe t11: ME, SIMC , PXD 5, S9 0K00 , 0.0 32x0.0 24m m

Zdenek Dolezal for test beam group

6 plane telescope (incl. DUT)IL-like pixels (24 µm pitch)Thick silicon (450 µm)‘old’ readout & control ASICsLearn a lot about DEPFET operationTuning of operation parametersX-check and tuning of simulationNext test beam end of JulyBelle II type test beam in 2010

Page 20: PXD Summary

SuperKEKB3nd open meeting,

July 7-9. 2009

Hans-Günther MoserMPI für Physik

Technical choices

Important: need to fix geometry: radius, module length, thicknesslatest possibility: September 2010 (prepare SOI material)Details on pitch can wait till March 2011Driven by sensor production schedule

However, engineering of support and cooling including prototypingshould start soon: need to fix parameters this year!

Page 21: PXD Summary

SuperKEKB3nd open meeting,

July 7-9. 2009

Hans-Günther MoserMPI für Physik

Parameter choices

Options like bricked pixels of variable pitch were abandoned in Ringberg(However: variable pitch may come back due to 1cm beam pipe?)

Major decision to take: 10µs or 20µs frame readout time?longer readout time allows smaller pixel, better resolutionslightly higher (but still tolerable) occupancyhigher readout bandwidth needed

20µs favoured in Ringberghave to study again for nano-beam

Some ideas to improve DCD readout speed (no DCS): not baseline

Important: Redundancy:Choose parameters (speed, pitch etc) not at the limit of the technology! Give some headroom in case some specs are not reached: e.g. T(line readout) x N(lines) < 10µs(e.g. use abort gap as ‘buffer’)