RCAS, Academia SinicaShih-Yen Lin ( 林時彥 )

Optoelectrical Devices with Nano-Structures Optoelectrical Devices with Nano-Structures

Experiment Systems (Since 2006.10)

Device Processing Line

10-300 K IR DetectorMeasurement System

10-300 K PL/PLE

P32 MBE (NCU)

C21 MBE (NCU)

Plasma-Assisted MBE (NSYSU)

LandMark Corporation

Xpert Corporation

Collaborations Between Different Institutes

Crystal Epitaxy and Optoelectronic Device Laboratory (RCAS)

NSYSU( 中山大學 )

中研院奈米計畫

CSIST( 中科院 )國科會計畫 Project

Collaboration

MBE growth( 杜立偉 教授 )

RCAS( 應科中心 )NCU

( 中央大學 )

MBE growth( 綦振瀛 教授 )

NTU( 臺灣大學 )國科會計畫

Project Collaboration

( 李嗣涔 教授 )

Xpert( 翔合 )

固本精進計畫

Local Wafer Vender (MBE)

Wafer Provider

TUB, GermanyPPP Project

GaSb QDs(Prof. Bumberg)

Multi-color Quantum-Dot Infrared PhotodetectorsMulti-color Quantum-Dot Infrared Photodetectors

InGaAs-Capped Quantum-Dot Infrared Photodetectors Operated at LWIR Range

2 4 6 8 10 12

0.0

0.5

1.0~ 7.9 m~ 6 m

Device B

Wavelength (m)

N

orm

aliz

ed R

espon

sivi

ty (a.

u.)

10 K2.0 V

Device A

4 6 8 10 12 140.0

0.2

0.4

0.6

0.8

1.0

1.2 10.4 m

Wavelength (m)

Device C10 K2.0 V

Res

pons

ivit

y (A

/W)

Substrate

Bottom Contact

50 nm GaAs

InAs QDs (ML)

42 nm GaAs

Top Contact 300 nm GaAs n=2x10 18 cm -3

600 nm GaAs n=2x10 18 cm -3

350 mm (100) Semi-Insulating GaAs

undoped

undoped

10x 8 nm In X Ga 1-X As (X=)

Samples A B C

0 15 15

2.5 2.5 2.0

E QD,0

E QD,1

E WL

GaAs InAs GaAs

(a)

(b)

E InGaAs

Appl. Phys. Lett., under revision

Stark Effect in Asymmetric QD structures

4 6 8 10 12 140.0

0.2

0.4

0.6

0.8

1.0

1.2

8 nm In0.15

Ga0.85

As

5.7 m

10.4 m

Wavelength (m)

10 K2.0 V

Res

pons

ivit

y (A

/W)

4 6 8 10 12 140.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.68 nm In

0.15Ga

0.85As

8.4 m

Wavelength (m)

10 K-2.0 V

Res

pons

ivit

y (A

/W)

2 4 6 8 10 12 14

4 nm In0.15

Ga0.85

As

1.6 V

-1.6 V

Wavelength (m)

10 K

Nor

mal

ized

Res

pons

ivit

y (a

.u.)

GaAs Barrier

GaAs Barrier

8 nm In 0.15 Ga 0.85 As Layer

2.0 ML InAs QDs

GaAs Barrier

GaAs Barrier

4 nm In 0.15 Ga 0.85 As Layer

2.0 ML InAs QDs

e -

e - e -

Accepted for publication at IEEE PTL.

Two-Color Quantum-Dot Infrared Photodetectors

2 4 6 8 10 12

0.0

0.2

0.4

0.6

0.8

1.0

Nor

mal

ized

Res

pons

ivit

y (a

.u.)

Wavelength (m)

2.6 V -2.6 V

10 K

InAs/GaAsQDs

InGaAs-capped QDs

PositiveBias

TopContact

BottomContact

Photo-excitedelectronsApplied

Voltage

NagativeBias

Photo-excitedelectrons

E F,quasi

E F,quasi

E F,quasi

AppliedVoltage

E F,quasi

350 m SI-GaAs substrate

50 nm undoped GaAs

2.5 ML InAs QDs

300 nm n-GaAs n=2x10 18 cm -3

5 x QD for MWIR

600 nm n-GaAs n=2x10 18 cm -3

50 nm undoped GaAs

2.0 ML InAs QDs

8 nm undoped In 0.15 Ga 0.8 5As

42 nm undoped GaAs

5 x InGaAs-cappedQD for LWIR

Appl. Phys. Lett., under revision

Site-Controlled Self-Self Assembled QDsSite-Controlled Self-Self Assembled QDs

Buffer Layer Growth on Patterned Substrates

50 nm GaAs/GaAsSb

24

68

10m)

24

68

10m)

24

68

10m)

100 nm GaAs

100 nm GaAsSb

Fabrication of Nano-Holes on GaAs Substrates

Appl. Phys. Lett. 88, 072107 (2006)

AFM Local Oxidation

MBE Thermal Desorption

Thin Buffer Layer Growth

Site-Controlled Self-Assembled QD growth

Fabrication of Nano-Holes on GaAs Substrates

0.60鑑0.60鑑0.6 m 0.6 m

After Oxidation After Thermal Desorption

Site-Controlled Self-Assembled Quantum Dots Grown on GaAs Substrates

0.0 0.5

0

1

2

3

4

5

0.0 0.5

0

1

2

3

4

5

0 1 2 3

0

1

2

3

m

m

Nano-oxides Site-controlled QDs

m)

Site-controlled QDsDot density 1x107 cm-2

0 2 4 6 8 100.20.40.60.81.01.21.41.61.82.02.22.42.6

RM

S (

nm )

CaAs Cap GaAs

0.97Sb

0.03 Cap

Buffer Thickness ( nm )

AFM Local Oxidation

Smooth Surfaces of Thin GaAsSb Buffers

Site-Controlled Self-Assembled QDs with Ultra-Low Dot Density 1x107 cm-2

Submitted to Appl. Phys. Lett.

GaSb Quantum Dots/Quantum RingsGaSb Quantum Dots/Quantum Rings

GaSb QDs grown under Different V/III Ratios

V/III=2.0

V/III=1.6

V/III=1.2

V/III=1.0

The Evolution of GaSb Quantum Rings with As Supply

100 % Sb

50 % Sb

4 sec. As irradiation

8 sec. As irradiation

Future WorkFuture Work

GaN-Based Devices By Plasma-Assisted Molecular Beam Epitaxy

350 400 450 500

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5In

0.2Ga

0.8N

GaN

PL

Inte

nsi

ty (a.

u.)

Wavelength (m)

300 K

GaN Rods on Si (111) InGaN film on GaN templates

340 350 360 370 380 390 400

GaN:Mg Rods

P4P3

P2

P1

300 K

200 K

250 K

150 K

100 K

77 K

PL

Int

ensi

ty (

a.u.

)

Wavelength (nm)

Future Work

Epitaxially Grown Graphene by MBE - Career development award - A new MBE system with max. substrate temperature 1200 oC - Filament C source and N plasma source within a single chamber

Single-QD Devices - Based on current site-controlled QD growth technique - Single-photon generator array - Single-electron transistor array

Long-Wavelength Light Sources and Detectors - A new measurement system up to 100 m - New device structures for tunable long-wavelength light sources/detectors

Publications after 2008

1. Chun-Yuan Huang, Meng-Chyi Wu*,Jeng-Jung Shen, and Shih-Yen Lin, “Self-ordered InGaAs Quantum Dots Grown at Low Growth Rates”, J. Appl. Phys. vol. 103, no. 4, pp. 044301, Feb. 2008 (SCI, IF:, NSC 95-2215-E-007-003.).2. Chi-Che Tseng, Shu-Ting Chou, Yi-Hao Chen, Tung-Hsun Chung, Shih-Yen Lin* and Meng-Chyi Wu,” Influence of As-stabilized surface on the formation of InAs/GaAs quantum dots”, J. Vacuum Sci. Tech. B, vol. 26, no. 3, pp. 956-958, May/June 2008 (SCI, IF: 1.419, NSC 96-2221-E-001-030).3. Shu-Ting Chou, Chi-Che Tseng, Cheng-Nan Chen, Wei-Hsiun Lin, Shih-Yen Lin*, and Meng-Chyi Wu, “Quantum-Dot/Quantum-Well Mixed-Mode Infrared Photodetectors for Multi-Color Detection”, Appl. Phys. Lett., vol. 92, no. 25, pp. 253510, June 2008 (The paper is also selected in the Virtual Journal of Nanoscale Science & Technology, Volume 18, Issue 2 (2008)) (SCI, IF: 3.596, NSC 96-2221-E-001-030).4. C. L. Tsai, K. Y. Cheng, S. T. Chou, S. Y. Lin, C. Xu and K. C. Hsieh, “Tailoring detection wavelength of InGaAs quantum wire infrared photodetector”, J. Vacuum Sci. Tech. B, vol. 26, no. 3, pp. 1140-1144, May/June 2008 (The paper is also selected in the Virtual Journal of Nanoscale Science & Technology, Volume 17, Issue 23 (2008)) (SCI, IF: 1.419).5. Chi-Che Tseng, Shu-Ting Chou, Yi-Hao Chen, Cheng-Nan Chen, Wei-Hsun Lin, Tung-Hsun Chung, Shih-Yen Lin*, Pei-Chin Chiu, Jen-Inn Chyi and Meng-Chyi Wu, “Enhanced Normal-Incident Absorption of Quantum-Dot Infrared Photodetectors with Smaller Quantum Dots”, IEEE Photonics Technology Lett., vol. 20, no. 14, pp. 1240-1242, July 2008 (SCI, EI, IF: 2.015, NSC 96-2221-E-001-030)6. Shu-Ting Chou, Shih-Yen Lin*, Cheng-Nan Chen, Chi-Che Tseng, Yi-Hao Chen, and Meng-Chyi Wu, “Single-Period InAs/GaAs Quantum-Dot Infrared Photodetectors”, IEEE Photonics Technology Lett., vol. 20, no. 18, pp. 1575-1577, Sep. 2008 (SCI, EI, IF: 2.015, NSC 96-2221-E-001-030).7. Chi-Che Tseng, Shu-Ting Chou, Shih-Yen Lin*, Cheng-Nan Chen, Wei-Hsun Lin, Yi-Hao Chen, Tung-Hsun Chung, and Meng-Chyi Wu, “The Transition Mechanisms of a ten-Period InAs/GaAs Quantum-Dot Infrared Photodetector”, J. Vacuum Sci. Tech. B, vol. 26, no. 6, pp. 1831-1833, Nov/Dec 2008 (SCI, IF: 1.419, NSC 96-2228-E-002-012).8. S. T. Chou, S. Y. Lin*, Bonnie Yu, J. J. Shyue, C. C. Tseng, C. N. Chen, M. C. Wu and W. Lin, “The Influence of Interface Roughness on the Normal Incident Absorption of Quantum-Well Infrared Photodetectors”, Thin Solid Films, vol. 517, no. 5, pp. 1799–1802, Jan. 2009 (SCI, IF: 1.693, SBIR project with Grant # 1C950022).9. Yung-Sheng Wang, Shoou-Jinn Chang, Shu-Ting Chou and Shih-Yen Lin* and Wei Lin, “High Responsivity InGaAs/InP Quantum-Well Infrared Photodetectors Prepared by Metal Organic Chemical Vapor Deposition”, Jpn. J. Appl. Phys. vol. 48, no. 4, pp. 04C108, May 2009 (SCI, IF:, SBIR project with Grant # 1C950022).10. Shih-Yen Lin*, Shu-Ting Chou, Wei-Hsun Lin, “The Transition Mechanisms of Quantum-Dot/Quantum-Well Mixed-Mode Infrared Photodetectors”, Infrared Physics & Technology, in press (SCI, IF:, NSC 96-2221-E-001-030 and NSC 96-2218-E-002-012).

Publications after 2008

11. Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, Shu-Chen Mai, Shih-Yen Lin*, and Meng-Chyi Wu, “InGaAs-Capped InAs/GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-Wavelength Infrared Range”, IEEE Photonics Technology Lett. accepted for publication (SCI, IF:, NSC 96-2221-E-001-030 and NSC 96-2218-E-002-012). 12. Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, Shih-Yen Lin*, and Meng-Chyi Wu, “Enhancement of Operation Temperature of InAs/GaAs Quantum-Dot Infrared Photodetectors with Hydrogen-Plasma Treatment”, J. Vacuum Sci. Tech. B accepted for publication (SCI, IF:, NSC 96-2221-E-001-030 and NSC 96-2218-E-002-012).13. Shih-Yen Lin*, Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, and Shu-Cheng Mai, “Voltage-Tunable Two-Color Quantum-Dot Infrared Photodetectors”, Appl. Phys. Lett. under revision (SCI, IF:, NSC 98-2221-E-001-001).14. Wei-Hsun Lin, Kuang-Ping Chao, Chi-Che Tseng, Shu-Chen Mai, Shih-Yen Lin* and Meng-Chyi Wu, “The influence of In composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectors”, J. Appl. Phys. under revision (SCI, IF:, NSC 98-2221-E-001-001).15. Shih-Yen Lin*, Chi-Che Tseng, Tung-Hsun Chung, Wen-Hsuan Liao, Shu-Han Chen, and Jen-Inn Chyi, “Site-Controlled Self-Assembled InAs Quantum Dots Grown on GaAs Substrates”, submitted to Appl. Phys. Lett. (SCI, IF:, NSC 98-2221-E-001-001). 16. Chi-Che Tseng, Tung-Hsun Chung, Shu-Cheng Mai, Kuang-Ping Chao, Wei-Hsun Lin, Shih-Yen Lin* and Meng-Chyi Wu, “The transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages”, submitted to J. Vacuum Sci. Tech. B (SCI, IF:, NSC 98-2221-E-001-001).17. Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, Shu-Chen Mai, Shih-Yen Lin*, and Meng-Chyi Wu, “InGaAs-Capped InAs/GaAs Quantum-Dot Infrared Photodetectors with 10.4 m Responses”, submitted to J. Vacuum Sci. Tech. B (SCI, IF:, NSC 98-2221-E-001-001).