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GANPOWER INTERNATIONAL
鎵 能 國 際 半 導 體 有 限 公 司
© GANPOWER INTERNATIONAL INC.
Report on OVP-GaN Testing
ByCarl XH Li (GaNPowerSemiconductor (Foshan) Ltd.)Simon Li (GaNPowerInternational Inc.)
2© GANPOWER INTERNATIONAL INC.
VPOVP-IC
D
S
Gi
Ig(ref)
MonolithicIntegration
GaNPower New Product: GaN EHEMT with Integrated Over-Voltage Protection Circuit
Go
Vgo (V)
3© GANPOWER INTERNATIONAL INC.
S
CO.34x45
K=2.74mm
b e
D2
E2
L
D
E
D=8; E=8; e=1.95; b=0.97;L=0.57; D2=6.82; E2=3.19
8LEAD DFN (8x8x0.75mm,Pitch 1.95mm) IMPORTANT:Please connect the bottom thermal pad to the source electrode on PCB
14
5 8
Pin 8
Top view Bottom view
Thermal pad and pin 1 are source; Pin 2 is sensing source; Pin 3 is GO (OVP-gate); Pin 4 is gate; Pins 5 to 8 are drain
DFN8x8-OVP. Suggested driving range G: 5-6V; GO: 5-15V, protection > 30V
D D D D
G GO SS S
Source/Thermal PAD
4© GANPOWER INTERNATIONAL INC.
White68n
Red1u
Red220p
Double pulse unclamped inductive switching (UIS) testing at 10V driving pulses.
Vd testing pointId probe
5© GANPOWER INTERNATIONAL INC.
Experimental• A general purpose power supply PCB were used with 8x8 DFN foot print
compatible with GaNPower OVP-GaN device (product ID GPI60515DSOVP).• A RIGOL DG1022U Waveform Generator were used as a driver to provide a
maximum of 10V driving to Go lead of the OVP-GaN device. 10V double pulse equivalent to 100kHz were used to perform the experiment.
• A CYBERTEK CP8050A Current Probe were used to provide drain current measure for the low-side GaN device.
6© GANPOWER INTERNATIONAL INC.
L1200uH
GaN1 (hi-side)
Vin (450V)
GaN2 (lo-side)
Ground
Ground
220pF1uF68nF
OVP-Vg inputTo wave generator
Vd testing point
Id probe
7© GANPOWER INTERNATIONAL INC.
Measurement Summary
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Waveforms
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Waveforms
10© GANPOWER INTERNATIONAL INC.
Waveforms
11© GANPOWER INTERNATIONAL INC.
Waveforms
12© GANPOWER INTERNATIONAL INC.
Waveforms
13© GANPOWER INTERNATIONAL INC.
Waveforms
14© GANPOWER INTERNATIONAL INC.
Conclusions
• Double pulse testing with unclamped inductive load has been succefully demonstrated for GaNPower’s OVP-GaNdevices up to 450V (limited by HV capacitor) and 24A.
• GaNPower’s OVP-GaN device not only provides over-voltage protection but also enables larger gate driving voltage up to 15V.
• Under hard-switching condition, it is important to protect the low-side GaN switch using a filtering capacitor.
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