Revision of EUV Mask ITRS

Roadmap (LITH6)

Long He (SMT/INTC), Frank Goodwin (SMT), Patrick Kearney (SMT),

Greg McIntyre IBM, Emily Gallagher (IBM), Pei-yang Yan (Intel),

Brian Cha (Samsung), Obert Wood (GF), Pawitter Mangat (GF), Jim Wiley (ASML),

John Zimmerman (ASML), Kazuya Ota (Nikon), Shusuke Yoshitake (Nuflare),

Yoshiaki Ikuta (AGC), Patrick Naulleau (LBNL), Naoya Hayashi (DNP),

Franklin Kalk (Toppan Photomask)

October 6, 2013, Toyama, Japan

2011 LITH6 EUVL Mask Requirements

Summary of 2013 LITH6 Revision

Row Description Revision / Addition

1 8x magnification (new) 8x mask itrs’d for 2019 insertion

2 Soft defect (new) Requirement identical to hard defect

3 Maximum blank defect size with

mitigation (new)

Values of the spec = Minimum primary

feature size

4 ML roughness (new) RSM = 0.05 nm for all years

5 Alternating PSM phase MTT and

uniformity (new)

Requirement identical to optical mask

6 Attenuated PSM absorber thickness

MTT and uniformity (new)

Targeted to be consistent with optical

mask, but leakage and phase specified

through absorber thickness

7 CD uniformities Relaxed by ~25% (back to optical mask)

8 Absorber thickness uniformity Tightened by 20%

9 Substrate defect Specified to 20 nm for all years

10 Updated / added notes Updated for clarity and simplicity

Summary of 2013 LITH6 Revision

Other Items Visited Consensus

1 EUV pellicle Not included: Pellicle is in its feasibility study

phase. Pellicle-less protection remains to be the

primary approach.

2 Double / multiple patterning No need: No EUV-specific requirement beyond

timeline

3 Backside defect Not included: Impact to overlay may be

implementation-specific

4 Data volume No significant change needed at this time, but

revisit in future revisions

Mask Related Litho Chapter Revision

Four mask topics will be discussed in the Chapter:

1. High NA and its impact to EUV mask

2. Blank defect mitigation strategy

3. EUV phase shift mask

4. ML roughness

8x Magnification Impact to Mask ITRS

Note [1]: This specification linearly scales

to mask magnification. To improve process

margin for device yield, the net increase of

the specification from changing to 8x

magnification is scaled back by 50%.

Added EUVL Phase Shift Mask Requirements

193nm EUV

Alt.PSM Alternating PSM phase MTT (± degree) 1 1

Alternating PSM phase uniformity (degree, range) 2 2

Att. PSM

Attenuated PSM transmission MTT (± % of target) 4

Attenuated PSM transmission uniformity

(% of target, range) 3

Attenuated PSM phase MTT (± degree) 3

Attenuated PSM phase uniformity ( degree , range) 3

Attenuated PSM absorber thickness MTT (± % of target) 1.4

Attenuated PSM absorber thickness uniformity (% of target,

range) 1.1

• Intended to be consistent with 193nm PSM masks. Specifications are verified

through modeling (not discussed here).

• For Attenuated PSM, phase = 180o and transmission is in the magnitude of 6%.

Added Multilayer Roughness Requirement R

oughness in M

L S

tack A

bs.

(courtesy of Patrick Naulleau, LBNL)

Note [V]: Multilayer Roughness – The maximum roughness for spatial frequency of

1/10µm (?) in ML film stack in the central 136mm x 136mm area. Note the

specification is based on modeling and estimate, targeting to limit ML roughness

contribution to resist LWR under 10%. How ML surface roughness relates to

the underlying ML film stack roughness is not specified in the roadmap.

Pro

po

sed

IT

RS

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TIME FRAME ACTION

AUGUST –

SEPTEMBER

1) Chapter writing assignments are

identified within TWGS

2) ITRS ITWG tables and figures prepared

OCTOBER 15

EXCEL & POWEPOINT FILES DUE

Final drafts of TABLES’ and FIGURES’ files [excel and

powerpoint]

COMPLETED & DUE to IRC reviewers

OCTOBER 31 IRC returns to ITWGs

NOVEMBER 15

WORD FILE DUE

Final draft text [word document file] of chapter writing

COMPLETED & DUE to IRC team reviewers for

technical and editorial remarks/questions.

NOVEMBER 30 IRC returns to ITWGs

2013 ITRS DATES

Page | 11

TIME FRAME ACTION

NOVEMBER 15 Presentations due to Japan for translation

DECEMBER 4-5 AND 6 2013 Winter Workshop and Public Forum Meetings in Japan

DECEMBER 15

FREEZE DATE— ALL ITWG REMARKS ARE DUE TO IRC

from all reviews

JANUARY 15 IRC Regional Approval

MARCH 31

ITRS IS POSTED

2013 ITRS DATES