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Semiconductor Materials and Diodes

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半導體材料與特性 pn 接面 二極體電路:直流分析與模型 二極體電路 : 交流等效電路 其他形式二極體. Semiconductor Materials and Diodes. 半導體材料與特性 (1/25). 前言 最常見的半導體為 矽 ,用在半導體元件及積體電路 其他特殊用途的則有 砷化鎵 及相關的化合物,用在非常高速元件及光元件 半導體 原子:質子、中子、電子 電子能量隨殼層半徑增加而增加 價電子:最外層的電子,化學活性主要由其數目而定. 週期表依價電子數而排列 第四族之矽與鍺為元素半導體 砷化鎵為三五族的化合物半導體. - PowerPoint PPT Presentation

Text of Semiconductor Materials and Diodes

  • Semiconductor Materials and Diodespn:

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  • T=0KEg () (3/25)

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  • Eg3-6 eV1 eV (=1.610-19)

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  • (a)EVECEg= EV - EC(b) (5/25)

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  • BEgkBoltzmann=8610-6 eV/K

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  • Example 1.1T=300 K

    1.51010 cm-351022 cm-3 (7/25)

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  • ()

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  • ()n

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  • p

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  • n0 p0 ni()()()

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  • np

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  • Example 1.2 T=300 K Nd=1016cm-3 1.1ni=1.51010cm-3

    Ndni

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  • ()()---

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  • n 1350 (cm2/V-s)n(/cm3)e

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  • p 480 (cm2/V-s)p(/cm3)e (18/25)

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  • (-cm)-1 , (-cm)

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  • Example 1.3 T=300 K Nd=8*1015cm-3 100 V/cm

    1.1 ni=1.51010cm-3 (1.9)

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  • eDn X (22/25)

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  • eDp X (23/25)

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  • ()() () ()

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  • PN (1/22)pnpnPN--- (b)x = 0

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  • pnPN (2/22)

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  • ()

    p(n)()VTT=300 K0.026 VVbipnVbi0.1-0.2 VPN (3/22)

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  • Example 1.5 T=300 K pnpNa=1016 cm-3 nNd=1017 cm-3

    1-1

    PN (4/22)

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  • PN

    NEAP(N)()PNPN (5/22)

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  • ()Cj0pFPN

    PN (6/22)

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  • Example 1-6 T=300 K Na=1016cm-3Na=1016cm-3pnNa=1016cm-3Cjo=0.5PFVR=1VVR=5V

    VR=1VVR=5VPN (7/22)

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  • PN()np(pn)EPN (8/22)

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  • ()N (P)P(N)P-N-

    PN (9/22)

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  • ISPN10-1510-13 AVT0.026 Vn12(1)21

    PN (10/22)

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  • Example 1.7 T=300 KPNIs=10-14An=1vD=+0.70VvD=-0.70V

    vD=+0.70Vpn

    vD=-0.70Vpn

    PN (11/22)

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  • PNPN-0.1V-1PN (12/22)

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  • PN0.1 V-IS 10-14 A 10-9 A(1 nA)PN (13/22)

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  • VT2 mV/CISni5 CIS 10 C(VT)ni PN (14/22)

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  • ()n (p)50-200 VPIV

    PN (15/22)

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  • (1)(2)(3)(4)(5)PN (16/22)

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  • (Zener)(tunneling) PN5VPN (17/22)

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  • t < 0,PN (18/22)

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  • PN (19/22)

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  • RRIR 0+ < t < tS ts tf10%

    PN (20/22)

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  • tf + tS

    PN (21/22)

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  • offon

    PN (22/22)

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  • DC (1/13)I-V()I-VI-ViD= 0, iD >0, vD~ 0,

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  • iDvD~ 0vO = vIiD =0vO =0 = 0 >0DC (2/13)

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  • DC (3/13)

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  • Kirchhoff

    VDVDDC (4/13)

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  • Example 1.8VDIDIs=10-13A

    VD=0.6V2.7V

    VD=0.6V15.1V DC (5/13)

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  • VD0.60.65V

    VD=0.619V4.99V(5V)

    DC (6/13)

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  • I-VVPS RID VD ID = 0, VD = VPS VD = 0, ID = VPS / R(Q)DC (7/13)

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  • VD Vr , 1/ rf rf VrVrrfDC (8/13)

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  • VD < Vr ,VDrf =0, rf=0DC (9/13)

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  • Example 1.9Vr=0.6Vrf=10ID 01.27(a)

    DC (10/13)

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  • rfRID Vr 0.7V ID2.15 mA ID Vr0.7 V

    DC (11/13)

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  • Vr = 0.7 Vrf = 0VPS = +5 V QVPS()R()A VPS = 5 V R = 2 kB VPS = 5 V R = 4 kC VPS = 2.5 V R = 2 kD VPS = 2.5 V R = 4 kSlope=-1/RDC (12/13)

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    ID=0VD=0VD=-5 VID=0

    DC (13/13)

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  • AC (1/8)acdcvi()vIdc VPSac vidcacdcac

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  • Current-voltage relationshipsacdcacdc ac

    acvd

  • ()gdrd

    dcIDQI-V()dcacAC (3/8)

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  • Example 1.9 Vps=5VR=5kVr=0.6Vvi=0.1sint(V)

    vi=0

    AC (4/8)

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  • VPS=0KVL

    rd

    AC (5/8)

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  • ac() VDQpn\VDQVDQ +V pn\VDQ+VVDQ -V pn\VDQ-VAC (6/8)

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  • +V-VPN +Q

    AC (7/8)

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  • Small-signal equivalent circuitgdCdCj rd CdN-P- AC (8/8)

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  • (1/13)---PN R

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  • ---

    (2/13)

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  • --- (3/13)

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  • LEDIFLEDLEDLED

    (4/13)

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  • Schottky barrier diode()n I-VPN

    PN

    (5/13)

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  • Schottky PN Schottky Vr

    (6/13)

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  • Example 1.12 PnSchottkyIS=10-12A and 10-8A, 1 mA

    (7/13)

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  • PN

    Schottky

    SchottkyIs PN

    (8/13)

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  • ----ICIC (9/13)

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  • IZ (10/13)

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  • rzVZIZ

    (11/13)

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  • Example 1.13 1.41Vz=5.6Vrz=0`RI=3mA

    R

    (12/13)

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  • The power dissipated in the Zener diode is

    The Zener diode must be able to dissipate 16.8mW of power without being damaged.

    (13/13)

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  • :(1/4)0100(1.20)

    T=300KIS =10-13A ISni2 I-V (-1)

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  • ,

    VD1VD2T1T2,

    2 :(2/4)

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  • T1=300KVD1 :

    VD1 = 0.5976 V ID =0.96mA

    (1)T1=300K (T):

    :(3/4)

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  • T = 300 KVD = 0.598V,T = 310.8 KVD =0.579V,,0100VD:VD0.1V, 67%,OPA

    :(4/4)

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