This is information on a product in full production.
May 2015 DocID027030 Rev 2 1/16
STD85N10F7AG
Automotive-grade N-channel 100 V, 0.0085 Ω typ., 70 A STripFET™ F7 Power MOSFET in a DPAK package
Datasheet - production data
Figure 1. Internal schematic diagram
Features
• Designed for automotive applications and AEC-Q101 qualified
• Among the lowest RDS(on) on the market
• Excellent figure of merit (FoM)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
Applications• Switching applications
DescriptionThis N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
DPAK
1
3
TAB
Order code VDS RDS(on)
maxID PTOT
STD85N10F7AG 100 V 0.010 Ω 70 A 85 W
Table 1. Device summary
Order code Marking Package Packing
STD85N10F7AG 85N10F7 DPAK Tape and reel
www.st.com
Contents STD85N10F7AG
2/16 DocID027030 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1 DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . 10
4.2 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
DocID027030 Rev 2 3/16
STD85N10F7AG Electrical ratings
16
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage 100 V
VGS Gate-source voltage ± 20 V
IDDrain current (continuous) at TC = 25 °C 70
ADrain current (continuous) at TC = 100 °C 48
IDM (1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 280 A
PTOT Total dissipation at TC = 25 °C 85 W
Tstg Storage temperature- 55 to 175 °C
Tj Max. operating junction temperature
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-pcb Thermal resistance junction-pcb max 50°C/W
Rthj-case Thermal resistance junction-case max 1.76
Electrical characteristics STD85N10F7AG
4/16 DocID027030 Rev 2
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSSDrain-source breakdown voltage
ID = 250 µA, VGS = 0 100 V
IDSSZero gate voltage drain current (VGS = 0)
VDS = 100 V 1µA
VDS = 100 V, TC=125 °C 100
IGSSGate-body leakage
current (VDS = 0)VGS = 20 V 100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2.5 3.5 4.5 V
RDS(on)Static drain-source on-resistance
ID = 40 A, VGS=10 V 0.0085 0.010 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VDS = 50 V, f = 1 MHz, VGS = 0
- 3100 -
pFCoss Output capacitance - 700 -
CrssReverse transfer capacitance
- 45 -
Qg Total gate charge VDD = 50 V, ID = 70 A,VGS = 10 V(see Figure 14)
- 45 -
nCQgs Gate-source charge - 18 -
Qgd Gate-drain charge - 13 -
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VDD = 50 V, ID = 40 A, RG = 4.7 Ω, VGS = 10 V
(see Figure 15 and Figure 18)
- 19 -
nstr Rise time - 32 -
td(off) Turn-off delay time - 36 -
tf Fall time - 13 -
DocID027030 Rev 2 5/16
STD85N10F7AG Electrical characteristics
16
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current - 70 A
ISDM (1)
1. Pulse width limited by safe operating area.
Source-drain current (pulsed) - 280 A
VSD (2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 70 A, VGS = 0 - 1.1 V
trr Reverse recovery time ISD = 70 A, di/dt = 100 A/µsVDD = 80 V, Tj=150 °C (see Figure 18)
- 70 ns
Qrr Reverse recovery charge - 125 nC
IRRM Reverse recovery current - 3.6 A
Electrical characteristics STD85N10F7AG
6/16 DocID027030 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
ID
100
10
1
0.10.1 1 VDS(V)10
(A)
Operation in
this
area is
Limite
d by max R
DS(on)
100µs
1msTj=175°CTc=25°C
Sinlgepulse
10ms
GIPD220720131539FSR
Single pulse
δ=0.5
0.050.020.01
0.10.2
K
10 tp(s)-4 10-3
10-1
10-510-2
10-2 10-1 100
c
AM18025v1
Figure 4. Output characteristics Figure 5. Transfer characteristics
ID
300
200
100
00 4 VDS(V)8
(A)
2 6
5V
250
150
50
6V
7V
8V
9V
VGS=10 V
AM15971v1ID
300
200
100
04 VGS(V)8
(A)
2 6
50
150
250
VDS=9V
10
AM15972v1
Figure 6. Static drain-source on-resistance Figure 7. Gate charge vs gate-source voltage
RDS(on)
8.1
7.9
7.7
7.50 80 ID(A)
(mΩ)
40
8.3
8.5
VGS=10V
20 60
8.7
8.9
9.1
AM18070v1 VGS
6
4
2
00 10 Qg(nC)
(V)
40
8
20 30
10
VDD=50VID=70A12
50
AM15974v1
DocID027030 Rev 2 7/16
STD85N10F7AG Electrical characteristics
16
Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature
C
1500
1000
500
00 40 VDS(V)
(pF)
20
2000
60
Ciss
CossCrss
80
2500
3000
3500
AM15975v1 VGS(th)
0.8
0.6
0.4
0.2
-55 -5 TJ(°C)
(norm)
-30
1
7020 45 95
ID=250µA
0120
1.2
AM15976v1
Figure 10. Normalized on-resistance vs temperature
Figure 11. Source-drain diode forward characteristics
Figure 12. Normalized VDS vs temperature
RDS(on)
0.5
0TJ(°C)
(norm)
ID=40A
1
-55 -5-30 7020 45 95 120
1.5
2VGS=10V
AM15977v1 VSD
0 40 ISD(A)
(V)
20 60 80
0.6
0.7
0.8
0.9
TJ=-55°C
TJ=150°C
TJ=25°C
0.5
1
1.1
AM15978v1
VDS
TJ(°C)
(norm)
0.96
0.97
0.98
0.99
1
ID=1mA
-55 -5-30 7020 45 95 120
1.01
1.02
1.03
1.04
AM15979v1
Test circuits STD85N10F7AG
8/16 DocID027030 Rev 2
3 Test circuits
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 16. Unclamped inductive load test circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF3.3μF
VDD
AM01469v1
VDD
47kΩ 1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200μF
PW
IG=CONST100Ω
100nF
D.U.T.
VG
AM01470v1
AD
D.U.T.
SB
G
25 Ω
A A
BB
RG
G
FASTDIODE
D
S
L=100μH
μF3.3 1000
μF VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200μF
3.3μF VDD
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tftr
90%
10%
10%
0
0
90%
90%
10%
VGS
DocID027030 Rev 2 9/16
STD85N10F7AG Package information
16
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
Package information STD85N10F7AG
10/16 DocID027030 Rev 2
4.1 DPAK (TO-252) type A2 package information
Figure 19. DPAK (TO-252) type A2 package outline
DocID027030 Rev 2 11/16
STD85N10F7AG Package information
16
Table 8. DPAK (TO-252) type A2 mechanical data
Dim.mm
Min. Typ. Max.
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 4.95 5.10 5.25
E 6.40 6.60
E1 5.10 5.20 5.30
e 2.16 2.28 2.40
e1 4.40 4.60
H 9.35 10.10
L 1.00 1.50
L1 2.60 2.80 3.00
L2 0.65 0.80 0.95
L4 0.60 1.00
R 0.20
V2 0° 8°
Package information STD85N10F7AG
12/16 DocID027030 Rev 2
Figure 20. DPAK (TO-252) recommended footprint (a)
a. All dimensions are in millimeters
DocID027030 Rev 2 13/16
STD85N10F7AG Package information
16
4.2 Packing information
Figure 21. Tape outline
P1A0 D1
P0
F
W
E
D
B0K0
T
User direction of feed
P2
10 pitches cumulativetolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
B1
For machine ref. onlyincluding draft andradii concentric around B0
AM08852v1
Top covertape
Package information STD85N10F7AG
14/16 DocID027030 Rev 2
Figure 22. Reel outline
Table 9. DPAK (TO-252) tape and reel mechanical data
Tape Reel
Dim.mm
Dim.mm
Min. Max. Min. Max.
A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D 1.5 1.6 D 20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R 40
T 0.25 0.35
W 15.7 16.3
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At slot location
T
Tape slot in core fortape start 25 mm min.width
AM08851v2
DocID027030 Rev 2 15/16
STD85N10F7AG Revision history
16
5 Revision history
Table 10. Document revision history
Date Revision Changes
21-Oct-2014 1 First release.
26-May-2015 2Text and formatting edits throughout document.Promoted document from “preliminary data” to “production data”Updated device package information.
STD85N10F7AG
16/16 DocID027030 Rev 2
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