ISTITUTO DEI MATERIALI PER L’ELETTRONICA ED IL MAGNETISMOSede: Parma - UOS: Genova, Trento, Torino
Sputtering
-800
-400
0
400
800
//
-15 -10 -5 0 5 10 15
Mag
ne
tisatio
n (
em
u/c
m3)
Magnetic field (kOe)
1x1014
ions/cm2
A1
10 m
m
MFM
EF-FETEM
0.136 nm [110]
0.5 nmSi
0 100 200 300 400 500Energy Loss (eV)
Inte
nsity
(arb
. uni
t)C-K edge
Zero loss
low gain
high gain
Plasmon loss
CL l = 381 nm
CL l = 515 nm
ZnO TP SEI
SnO2 NBs
Chocralski CdTe
CZT X-ray det. response
Inorg/Inorg Org/Inorg - 1
InN/InGaN InN/Dyes
Org/Inorg - 2
ZnO/Dyes
Ab initio calculations
MBE
MAP of the LABS
Homo- (a) and hetero- (b)Synaptic junctions
Model of learning for LimneaStagnalis: association of the mechanical stimulus with presence of food
Organic Bioelectronics and Memristors
SYNAPSES
Photolithography
Metallization
Reactive
ion
etching
Wire bonding
Nanosystem for drug delivery i.e. based on Magnetic NP
Nanosystems for Photodynamic therapy
Polyelectrolyte capsules
Rom
a, 9
Set
tem
bre
2013
Thin Film Photovoltaic
Modules
X-ray Detectors and Monochromators
Magnetic Sensors for Electric Vehicles
Magnetic Refrigerators
Photovoltaic Cells for Infrared Radiation
Gas & OV Sensors
HumiditySensors
1
2
3
6
4
5
7
8
SuperconductingPower Cables
Role of IMEM-CNR
materials engineering
technology development
prototype manufacturing
Products developed
with industrial partners
Bio-electronics
and Bio-Sensors