This is information on a product in full production.
July 2014 DocID023799 Rev 4 1/13
STR2N2VH5
N-channel 20 V, 0.025 Ω typ., 2.3 A STripFET™ H5 Power MOSFET in a SOT-23 package
Datasheet — production data
Figure 1. Internal schematic diagram
Features
• Low on-resistance RDS(on)
• High avalanche ruggedness
• Low gate drive power loss
Applications• Switching applications
DescriptionThis device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
SOT-23
12
3
Order code VDS RDS(on) max ID PTOT
STR2N2VH5 20 V 0.03 Ω (VGS=4.5 V) 2.3 A 0.35 W
Table 1. Device summary
Order code Marking Packages Packaging
STR2N2VH5 STD1 SOT-23 Tape and reel
www.st.com
Contents STR2N2VH5
2/13 DocID023799 Rev 4
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
DocID023799 Rev 4 3/13
STR2N2VH5 Electrical ratings
13
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage 20 V
VGS Gate-source voltage ± 8 V
ID(1)
1. This value is rated according to Rthj-pcb
Drain current (continuous) at Tpcb = 25 °C 2.3 A
ID (1) Drain current (continuous) at Tpcb = 100 °C 1.4 A
IDM(1)(2)
2. Pulse width is limited by safe operating area
Drain current (pulsed) 9.2 A
PTOT(1) Total dissipation at Tpcb = 25 °C 0.35 W
Tstg Storage temperature- 55 to 150
°C
Tj Max. operating junction temperature °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-pcb(1)
1. When mounted on 1 inch² FR-4, 2 Oz Cu, t< 10 sec.
Thermal resistance junction-pcb max 357 °C/W
Electrical characteristics STR2N2VH5
4/13 DocID023799 Rev 4
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSSDrain-source breakdown voltage
VGS = 0, ID = 1 mA 20 V
IDSSZero gate voltage
drain current
VGS = 0, VDS = 20 V 1 µA
VGS = 0, VDS = 20 V, TC=125 °C
10 µA
IGSSGate-body leakagecurrent
VDS = 0, VGS = ± 8 V ± 100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 0.7 V
RDS(on)Static drain-source on-resistance
VGS = 4.5 V, ID = 2 A 0.025 0.03 Ω
VGS = 2.5 V, ID = 2 A 0.031 0.04 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VGS = 0, VDS = 16 V, f = 1 MHz
- 367 - pF
Coss Output capacitance - 92 - pF
CrssReverse transfer capacitance
- 16 - pF
Qg Total gate charge VDD = 16 V, ID = 2 A,
VGS = 4.5 V(see Figure 14)
- 4.6 - nC
Qgs Gate-source charge - 0.9 - nC
Qgd Gate-drain charge - 1 - nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Voltage delay time VDD = 16 V, ID = 2 A, RG = 4.7 Ω, VGS = 4.5 V(see Figure 15 and Figure 18)
- 4.8 - ns
tr (V) Voltage rise time - 14.4 - ns
td (off) Current fall time - 17 - ns
tf Crossing time - 4 - ns
DocID023799 Rev 4 5/13
STR2N2VH5 Electrical characteristics
13
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current - 2.3 A
ISDM (1)
1. Pulse width limited by safe operating area.
Source-drain current (pulsed) - 9.2 A
VSD (2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage VGS = 0, ISD = 2 A - 1.1 V
trr Reverse recovery time ISD = 2 A, di/dt = 100 A/µsVDD = 16 V, Tj = 150 °C(see Figure 18)
- 10 ns
Qrr Reverse recovery charge - 24 nC
IRRM Reverse recovery current - 4.8 A
Electrical characteristics STR2N2VH5
6/13 DocID023799 Rev 4
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance
ID
1
0.1 1 VDS(V)10
(A)
Operation in this area is
Limited by max R
DS(on)
1ms
100µs
0.1
Tj=150°CTpcb=25°CSingle pulse
10ms
10
AM18126v1
Single pulse
δ=0.5
0.05
0.02
0.01
0.1
0.2
K
10 tp(s)-4 10-3
10-2
10-1
10-510-3
10-2 10-1 100
pcb
AM18127v1
ID
20
12
4
00 1 VDS(V)2
(A)
3
0.5V
1.5V
VGS=2.5, 3.5, 4.5, 5.5, 6.5 V
8
16
4
AM18128v1ID
16
8
00 0.4 VGS(V)0.8
(A)
0.2 0.6 1
4
12
20
VDS=4V
1.2
AM18129v1
VGS
6
4
2
00 4 Qg(nC)
(V) VDD=10VID=2A
2 6
AM18130v1 RDS(on)
24.8
24.4
241 2 ID(A)
(mΩ)
1.5 2.5
25.2
VGS=4.5V
3 3.5
25.6
26
AM18132v1
DocID023799 Rev 4 7/13
STR2N2VH5 Electrical characteristics
13
Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature
Figure 10. Normalized on-resistance vs temperature
Figure 11. Normalized V(BR)DSS vs temperature
Figure 12. Source-drain diode forward characteristics
C
100
100 8 VDS(V)
(pF)
4 12
Ciss
Coss
Crss
16
AM18133v1 VGS(th)
0.6
0.4
0.2
0-55 -5 TJ(°C)
(norm)
-30
0.8
7020 45 95
ID=250µA
120
1
1.2
AM18134v1
RDS(on)
1.4
0.8
0.4
0TJ(°C)
(norm)
0.2
0.6
1
1.2
1.6
ID=2AVGS=10V
-55 -5-30 7020 45 95 120
AM18135v1 V(BR)DSS
TJ(°C)
(norm)
0.9
0.95
1
1.05
1.1ID=1mA
-55 -5-30 7020 45 95 120
AM18136v1
VSD
0.5 1.3 ISD(A)
(V)
0.9 1.7 2.10.5
0.6
0.7
0.8
TJ=-55°C
TJ=150°C
TJ=25°C
0.9
AM18137v1
Test circuits STR2N2VH5
8/13 DocID023799 Rev 4
3 Test circuits
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 16. Unclamped inductive load test circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF3.3μF
VDD
AM01469v1
VDD
47kΩ 1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200μF
PW
IG=CONST100Ω
100nF
D.U.T.
VG
AM01470v1
AD
D.U.T.
SB
G
25 Ω
A A
BB
RG
G
FASTDIODE
D
S
L=100μH
μF3.3 1000
μF VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200μF
3.3μF VDD
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tftr
90%
10%
10%
0
0
90%
90%
10%
VGS
DocID023799 Rev 4 9/13
STR2N2VH5 Package mechanical data
13
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
Package mechanical data STR2N2VH5
10/13 DocID023799 Rev 4
Figure 19. SOT-23 mechanical drawing
Table 8. SOT-23 mechanical data
Dim.mm
Min. Typ. Max.
A 0.89 1.40
A1 0 0.10
B 0.30 0.51
C 0.085 0.18
D 2.75 3.04
e 0.85 1.05
e1 1.70 2.10
E 1.20 1.75
H 2.10 3.00
L 0.60
S 0.35 0.65
L1 0.25 0.55
a 0° 8°
0053390_I
DocID023799 Rev 4 11/13
STR2N2VH5 Package mechanical data
13
Figure 20. SOT-23 recommended footprint (a)
a. Dimensions are in mm.
2.89
0.95
0.48
0.97 0.99
SOT-23 footp_I
Revision history STR2N2VH5
12/13 DocID023799 Rev 4
5 Revision history
Table 9. Document revision history
Date Revision Changes
19-Oct-2012 1 First release.
14-Jan-2013 2 Modified: RDS(on) values
19-Mar-2014 3
– The part number STT5N2VH5 has been moved to a separate datasheet
– Modified: the entire typical values in Table 5, 6 and 7
– Added: Section 2.1: Electrical characteristics (curves)– Minor text changes
25-Jul-2014 4– Modified: title, description and features– Updated: Figure 12– Minor text changes
DocID023799 Rev 4 13/13
STR2N2VH5
13
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