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  • ( , , } 2007 , , 201 0

    l/lxt, +l , Fj //Ix , o 2008 , ,' I) ISO9001

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    , 2009 ,

    (I , , i ,2010 ,

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    Shanghai Sunby Sdar T chndog Co., Ltd. s a professional High technology enterprise, which is engaged in R&D,rnanufactur ng, sales of high quality PV r bbon. Founded in 2007, the headquarters of sunby' s ar s locatedin Shanghai, Ch na. And in 2010 company built a whoIIy o'Nned subsid ary in the city Yix ng, angsu province

    Jiangs' New Sunby Solar T chn ogy Co., Ltd.

    Company has international advanced integration production l ne, the spec aI zed quality testing labo''atory,adopts strict qu ty control system, to ensure product quality. ln 2008, the co! pany took the lead n pass ngthe Ch na qual ty certification center ISO9001 qual ity system certificat on, in 2009, the photovoltaic ribbonproject dev oped by our company for solar mod e 'I'Ias re Iarded as Shanghai key new product, n the sameyea r: the company was rated as h ghtech enterprises in Shanghai, n 2010, the col pany was rated as innovative

    companies n Shangha , in 2011 the coml)any had a fit e g ant enter1 rise of Shangha sc ence and technologyawa rd, chairman of the board of directors of our company won the nat on science and techn ogy spec alcontribution awa rd. 'n 2015, company developed tho ndustry ead ng high efficient photovolta c 'ibbon byst ckey: grea y enhance the conversion efficiency' of the cornponents, contr but ng o'Nn efforts for the sdarindustry boon ng.

    Sunby people solidar ty, pool ng energ continuous innovation, excellence, upholding the peop e or ented,3dhere to qu ty as the core, hop ng to be the globe kno''In 3nd first dass n domestic photovoltaic ribbonproducer.

    SunBy OiY

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    ' Co1pany honors and cert fcates

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    j ISO9001 ,, , I ] , T ,') ,

    Sunby So1a '' ntroduces the world advancedintegration PV ribbon product on l ne, we made strict

    i rnpleynentat on of lSO900l international ualitysyste l certif cation standards. From the materials

    purchasing to the fini hed product ons of each Iork ng

    procedure strictly cohtrol to ensure product qual ty n

    I ne with the Ge''nan T V certificat on standards, so

    as to ensure the satisfaction of custon ers.

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    ( n t) : ''

    * ( )S ze (

    'idth xhickness)

    Copper base

    thickness

    0. 18

    0. 20

    0. 22

    0. 15

    0. 20

    0. 15

    0. 18

    0. 20

    0. 22

    0. 13

    0. 15

    0. 18

    0. 20

    0. 30

    0. 30

    0. 35

    Coating a ioys

    (' nte rconnect)

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    (Busbar)

    1. 2 * 0. 23

    1.2 * 0 25

    1. 2 *0. 27

    1. 5 *0. 20

    1. 5 * 0. 25

    1, 6 * 0. 20

    1. 6* 0. 23

    1. 6 * 0. 25

    1. 6*0. 27

    1. 8 * 0. 18

    1. 8 * 0. 20

    1.8 * 0. 23

    25un 5un

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    SnPbAg: 62/3 6/2

    SnPb: 60/40

    SnPb : 63/3 7

    Sn: 100

    SnAgCu : 96. 5/3/0. 5

    5 * 0. 25

    5 * 0. 35

    6*0. 35

    6* 0.40

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    N ote: We can customize s1 ec f cat ons of the products accord ng to the requirements of custor'ners. The hardness

    of copper base, copper thickness& the thickness of the t n layer can be Bdjusted acco''d ng to the demand of

    custo n ers.

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    : ( )Base later al . in aer th nkness

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  • ' ' Techn ca' Pararneters

    i /j Raw mater als

    G rade

    i ! Composition content

    TIJ 1/ Cu-TP1/CDA110 : Cu>99.95%

    = | Chara cter

    st c

    : 100% 'ACS

    Tin

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    : 7

    7

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    : SnPb:60/40: I < 183c:

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    Sn:100 ,

    ; SnAg :96. 5/3. 5

    ! SnAgCu :96.5/3.0/0.5

    : < 220 :

    90 130N/n

    m2- Busbar

    < 70N/mm2 nte rconnect

    0. 08 0. 4mm

    '' ' Mechanicai Property of F nshed Product

    j >150N/mm2T ns l e

    Y eld Strength

    Vicke rs Hardness

    i o'erance

    Th ckness

    Width

    K ( )Length Tolerance (Length fixed

    1. 08rrl m

    1n n

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    Tbta l Internal Renechon

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    3 % o

    As the new PV complementa ry products, Eff=c ent

    Light Capturing R bbon, in combination '''IitY

    optical theory and practical appl cat ons in its R

    & D and design, with the us ng of convent onal

    welding zone around w'thout affecting the origina

    characteristics of photovdta c con ponents and

    technology premise, cBn imp''ove overa I I power

    nodule about 3%.

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    2 %

    Light capturing rit* on s in l ne

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    I th n arket den and and thedevelopment of a new type

    of welding products, whichl(::'I'y chBnging the raw ater=a |

    process= ng techndogy in the ea 'yprocessing of raw n laterials and

    a nun ber of re ular shapes areprocessed n the originaI sn oothsurface, these shapes can util ;ze

    the principle of light refraction,

    tr':;lnsfer and d spersed light source

    on the surface of rit* into the

    surface of c ls, to increase the solar

    cell surface and the l ght intens t%

    therefore 'you can upgrade the

    ove ra l l p Ner about 2%.

    =

    Light at Normal Incidence

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    ) 90

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    3 %

    Bei d ng busbars uses cold roIIing techndogy to bend the busbar plai e into the angle of 90 , the busbar after

    bend ng ca1 subst tute the exist ng busbar perfectly, and because of the whdel y B!ending, th(; re is no welding

    points and overlap parts, so the overal l res stance s s gnif cantly less than the busbar by 'Neldig, and the usage

    amount can be saved about 3% because of no more overlap welding.

    ' Pack n

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