19747:SiNMOSSiNMOS Siticon Gate N ChannelMOS TechnologY
Phvsicaa=de-ectricacharacterislicsa=dprocessl=gteCq=eSOftheSigateN
channelMOS LSIs are discussed.With the SigateN
channelMOStechniquethe
4096-bitmemorvhascometobeproducedo=aCOmmerCialbasisThisSigateN
andLSIsofhighercIassesThearlicle∂lsodescribessomeofitsappCations
NMOS
,CVD
,,,PSi,Si
V,Al
q
g(
P
Ec
Structure
17
20 10 5
,r.:Si
⊥1,β:PSii
QS
r
,M
Q5S,
,Q55.1J100
,A-
Fig4 Pocessing Step for Sj Gate N Chan=elMOST
111Q55%
(a)
(Bottom)and That by Spin On GSS Process wjth a Flatter
Surface(Top)
(3)
ChanneMOST
,
Q5sMOSTBT
(Bias Temperature)VTf∫
V7/±0.05V,
:P,<100>,8£cm
r
Fig7 hteface State Densty Versus E=ergyi=the Gap
”b30VSiP MO
S L SI m50V
RAM4TR S(),3TR S,
ments
(1)RAM
3TR
S--∫4
DD(b)4S MOS (c)3TRSMOS (d)3TRSMOS I
W= RW=L WW=
9 MOS MOS ,
4TRS,3TRS,lTRS
20
CE CS
Fig.10 Block Diagam of 4k bit RAM
