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BJT – Model
Yong Heui Cho @ Mokwon University
Some of slides are referred to:[1] A. S. Sedra & K. C. Smith, Microelectronic Circuits.
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Electronic Circuits
7. Diode – Advanced Applica-tions8. BJT – Operational Princi-ple9. BJT – Model
10. BJT – Analysis of Bias
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Active Condition• Collector Current(IC) = about mA• CE Voltage(VCE) = VCC/2
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NPN TR as Switch• NOT gate in digital circuit
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PNP TR as Switch
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iD = 0, vD ≤ VD0 iD = (vD - VD0) / rD , vD ≥ VD0
Diode Model• Piecewise Linear Model– B-E junction in BJT
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BJT Model• Diode model: B-E junction• Dependent current source: B-C junc-
tion
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Simple Ebers-Moll Model
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Final Model
Ebers-Moll Model at saturation Mode
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saturation modecutoff mode
Saturation Mode• Active, cutoff, and saturation modes• Small R region, full of carriers
active mode I-V curve