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BJT – Model Yong Heui Cho @ Mokwon University Some of slides are referred to: [1] A. S. Sedra & K. C. Smith, Microelectronic Circuits.

BJT - Model

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Page 1: BJT - Model

BJT – Model

Yong Heui Cho @ Mokwon University

Some of slides are referred to:[1] A. S. Sedra & K. C. Smith, Microelectronic Circuits.

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Electronic Circuits

7. Diode – Advanced Applica-tions8. BJT – Operational Princi-ple9. BJT – Model

10. BJT – Analysis of Bias

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Active Condition• Collector Current(IC) = about mA• CE Voltage(VCE) = VCC/2

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NPN TR as Switch• NOT gate in digital circuit

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PNP TR as Switch

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iD = 0, vD ≤ VD0 iD = (vD - VD0) / rD , vD ≥ VD0

Diode Model• Piecewise Linear Model– B-E junction in BJT

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BJT Model• Diode model: B-E junction• Dependent current source: B-C junc-

tion

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Simple Ebers-Moll Model

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Final Model

Ebers-Moll Model at saturation Mode

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saturation modecutoff mode

Saturation Mode• Active, cutoff, and saturation modes• Small R region, full of carriers

active mode I-V curve