- 1. Using Surface Micromachining ImplementSingle Cell Biochip
Platform
2. (Patch Clamp)(pipette)(voltage clamp) (action potential) BOE
1m 7m BOSCH ICP I 3. Abstract Patch clamp is a well-developed
electrophysiological recording techniqueused to study ion channel
function and regulation. The conventional method of performing
patch clamp technique employs a glass micropipette onto the cell
bymanual manipulation. Despite this technique is extremely
sensitive andinformation-rich, but requires a highly-skilled
operator and is limited inthroughput. Voltage clamp that determine
the behavior of the ion channelconductance responsible for the
generation of the action potential is the anothermethod to record
the flow of ionic current across the cell membrane. The method is
held a constant membrane potential while the ionic current flowing
throughthe membrane is measured.This research continue the
achievement of our laboratory. We not only replace traditional
patch clamp of glass electrode by patch clamp chip, but also
improveits efficacy, field and cost down. In this research we
reduce the patch hole below1m using the method of changing
structure material, process flow, and an additional process of BOE
dipping. Then the accurate rate could be arised. Bythis we also
reduce the whole structure thickness of the chip identically
whichcan make local series resistance lower and stablely. Besides
in the process wecancel the BOSCH ICP that has expensive patent
cost, and replace bulkmicromachining process by surface
micromachining like process to raise filed,hence this chip would
have much more competition potential. II 4.
KeywordsMEMSElectrophysiologyPatch ClampIon Channel III 5. IV 6.
Happy V 7. e-beamVI 8.
..............................................................................................................IAbstract
....................................................................................................II
...........................................................................................................IV
.........................................................................................................VII
.....................................................................................................XI
..................................................................................................XIV
1.1
...........................................................................................1
1.2
...............................................................1
1.3
..................................................................
4 1.4
....................................................................11
1.5
................................................................................12
1.6
..................................................................................13
1.6.1...............................................................13
1.6.2...............................................16 1.7
....................................................................................33
1.8
..................................................................................36
2.1
............................................................................................37
2.2 ......................................................37 2.3
................................................................38
2.3.1.......................................................................39
2.3.2
.................................................................40
VII 9. 2.3.3 ...........................................412.3.4
...............................................................412.3.5
...................................................................422.3.6
...........................................422.3.7
...................................................43 2.4
................................................................43
2.5
..........................................................442.5.1
...........................................................442.5.1.1
.........................................................................442.5.1.2
.............................................................452.5.1.3
.....................................................................462.5.1.4
.............................................................462.5.2
.................................................472.5.3
........................................................482.5.4
....................................................................492.5.5
................................................51 2.6
.....................................................................512.6.1
....................................512.6.2
........................................................53 2.7
.................................................................................532.7.1
........................................................532.7.2
........................................................552.7.3
................................................56 3.1
....................57 3.2
................................................................633.2.1
.......................................................................643.2.2
...............................................................70VIII
10. 4.1 RCA clean
................................................................................754.2
.........................................................................................754.3
.................................................764.4 SiO y
..............................................774.5 SiN x
..............................................774.6
.....................................784.7
.............................................794.8 TMAH
............................................................................804.9
.....................................854.10
...........................................874.11
.....................................................................884.12
.........................................884.13
.........................................................................904.14
.............................................904.15 PECVD
..................................................934.16
............................................................................100
5.1 C 4 F 8
................................................................1015.2
TMAH
...................................................................1025.3
ICP .........................................................1035.4
................................................................1045.5
....................................................................1045.6
........................................................................106
.......................................................................................108
ARCA clean
...............................................................113
B ......................................................115 IX 11.
C
..................................................................121
D
.................................................................127
E
..................................................................135
F
........................................................................141
X 12. 1.1 SEM 100m 15m .........7 1.2LIGA 38m NiFe ........7 1.3
....................................................................8
1.4 SU-8 ......................................................8
1.5 ............................................................8
1.6
..........................................................................................9
1.7........................................................................................9
1.8
.................................................................9
1.9
...........................................................................................10
1.10
.............................................................................................10
1.11
..............................................................................................10
1.12
...................................................................16
1.13 ...............................................16 1.14
..................................17 1.15
....................................................................17
1.16
.............................................................................17
1.17
.............................................................18
1.18
....................................................................................18
1.19 PDMS SEM .................................19 1.20 PDMS
..................................................20 1.21 SEM
....................................................20 1.22
......................................................21 1.23 SEM
...............................................................21
1.24 SEM ...................................................21 1.25
..........................................................................22
1.26 SEM
...................................................................................22
1.27 3m
......................................................................................23
1.28 2.5m
...................................................................................23
1.29 1m
..............................................................................23
1.30
..................................................................23
1.31 ..........................................................24
1.32 SEM ............................................24 1.33 PECVD
SEM ....25 1.34
.........................................................25XI 13.
1.35................................................................26
1.36
.....................................................................26
1.37 SEM .....................................................26
1.38
..................................................................27
1.39
...........................................................................27
1.40 SEM ....................................................27
1.41
..........................................................................28
1.42PECVD SEM
.................................................................29
1.43PECVD
...........................................................29
1.44SOI SEM ..................30 1.45LTO
.........................................................31 1.46LTO
.................................................................31
1.47LTO
.................................................................32
1.48LTO SEM
.......................................................32 1.49
.....................................................................................36
2.1
..............................................................................38
2.2
......................................................................39
2.3 ......................................45 2.4
..........................................46 2.5
.................................................................52
2.6
.................................................................54
2.7
.................................................................55
2.8
..................................................................56
3.1
..........................................................................60
3.2 TMAH .................................................66
3.3-(a) -1
...............................................................................67
3.3-(b) -2
................................................................................67
3.4-(a) -1
...............................................................................68
3.4-(b) -2
..............................................................................68
3.5-(a) -1
................................................................................69
3.5-(b) -2
................................................................................69
3.6 Si3N4SiO2....................................................
74 4.1
...........................................................76 4.2
OM ...................................................79 4.3 OM
...................................80XII 14. 4.4
.....................................................82 4.5
..................................................................................82
4.6 .............................................................82
4.7 spacer
.........................................................................82
4.8 spacer
...................................................................................82
4.9 TMAH
.......................................................................82
4.10-(a) TMAH
..............................................................83
4.10-(b) TMAH ..................................................83
4.11 TMAH
.................................................................83
4.12 TMAH ......................................83 4.13-(a) TMAH
.....................................83 4.13-(b) TMAH
.....................................83 4.14
..........................................84 4.15
.........................................84 4.16-(a)
................................. 84 4.16-(b)
................................. 84 4.17-(a)
SiO2.................................... 84 4.17-(b)
Si3N4................................... 84 4.18 UV
..........................................................86
4.19-(a) Si3N4
...............................................................87
4.19-(b) SiO2
................................................................ 87
4.20 ..................................................91 4.21
..................................................91 4.22 PECVD
.......................................93 4.23 BOE
..........................................94 4.24 PECVD
.......................................94 4.25 BOE
.............................................95 4.26 PECVD
.......................................95 4.27-(a) BOE
...................................97 4.27-(b) BOE
...................................................97 4.28-(a) BOE
...............................98 4.28-(b) BOE
..............................................98XIII 15. 4.29-(a)
BOE .............................99 4.29-(b) BOE
...............................................99 4.29-(c) Tilt20
....................................................................100
5.1
..................................................................................101
5.2 C4F8 .......................................................101
5.3
..................................................................102
5.4 ..................................................102 5.5-(a)
OM .............................................................103
5.5-(b) SEM
..........................................................103 5.6
..........................................................................104
5.7
..........................................................................104
5.8
......................................................................105
1.1 .......................................................6 4.1
SF6 .....................................93 XIV 16. 1.1
(micro-electro-mechanical system MEMS)(Micro system
technology)(1965 ) 1959 There is Plenty ofRoom at the
Bottom(micromachines) 1982 (silicon as a mechanical material)1989
(Micro-Tele-Operated Robotics Workshop) () 1.2 [37] 1959 -1- 17.
(1)(2) X (3)(sacrificiallayer)(back-side etching)(micro hinge) -2-
18. (4) (single crystal) (poly crystal) (amorphous) (Silicon
Nitride Si3N4) (Silicon dioxideSiO2) -3- 19. 1980 (Microelectronics
Center of NorthCarolinaMCNC) MUMPs(multi-userMEMS processes) Sandia
(Sandia National Laboratory) SUMMiT(Sandia Ultra-planar,Multi-level
MEMS Technology) 1.3 1.1 1.4 1.5 1.8(switch) 1.9 1.11 -4- 20.
(1)(2)(3)(4)(5) (Royal Institute of Technology)(1)(2)(3)(1)(2)(3)
1.1 (Cahner In-Stat Group) -5- 21. 2000 2005 26 % 24 % 15 % 15 %9.5
% 14 % 8.2 % 12 %4.4 % 6.9 %4 % 6% 1.6 % 4%0.8 % 2.9 % 0.6 % 2.2 %
0.4 % 1.7 % 1.1 -6- 22. 1.1 SEM 100m 15m [1]1.2 LIGA38mNiFe [2] -7-
23. 1.3 [3] 1.4 SU-8 [4]1.5 [5]-8- 24. 1.6 [6] 1.7 [7] 1.8 [8]-9-
25. 1.9 [9] 1.10 [10] 1.11 [11] - 10 - 26. 1.4 (restingmembrane
potential)(Polarization) (depolarize)(grade potwntial)(EPSP) - 11 -
27. 1.5 (sucking)- 12 - 28. 1.6 1.6.1 1890 (WilhelmOstwald1909 )
1920 [12]1940(Ling)(Gerard)[13]1952(Alan Hodgkin1963)(Andrew
Huxley1963)(Katz)(voltage-clamp)[14]1976Erwin Neher(1991- 13 - 29.
)Bert Sakmann(1991)(receptor)NeherSakmann(sensor)(diabetes)(cystic
fibrosis)[14] 1970 X [15] Roderick Mac Kinnon - 14 - 30. 30 X 1998
4 [15]Mac Kinnon Kcs A Streptomycesliridans 1.12MacKinnon 1.13[15]
- 15 - 31. 1.12 [15] 1.13 [15] 1.6.2
2001Ludwig-Maximilians-Universitat(ion track etching)1.141.16[16]-
16 - 32. 1.14 [16] 1.15 [16] 1.16 [16] - 17 - 33. 2002
SophionAPATCHI-1[17] 2002 (Munich University)(Centerof Nanoscience)
Niels Fertig (Planar micro structured quartz chip)1.171.18(Xenopus
oocytes)(cell-attached mode)(mammalian)(whole-cell mode)Nanion
[18]1.17 [18] 1.18 [18]- 18 - 34. 2002 (Yale) Kathryn
PDMS(Polydimethysiloxane)1.19(Gigaomh Seal)1.20 [19] 1.19 PDMS SEM
[19]- 19 - 35. 1.20 PDMS[19] 2002(Swiss Federal Institute of
Technology)(Institute of Microelectronics and
Microsystems)Lehnert(Hamburg)Evotec OAI
AGNetzer(SiO2)(micronozzle)1.21[20] 1.21 SEM[20]- 20 - 36. 2003
Masato TANABE MCA (Micro Channel Array)1.22[21] 1.22 [21]
2003(polymide)(focus ion beam etching)2m4m1.23 1.24[22] 2 m2 m 1.23
SEM[22] 1.24 SEM[22]- 21 - 37. 2003Cytocentrics
CCSCytoPatch(quartz)1.251.26[23]1.25 [23]2 m1.26
SEM[23]20033m1.27(Low Pressure Chemical VaporDeposition LPCVD)2m
2.5m 1.28 LPCVD2m1m1.291.30[24]- 22 - 38. 1.27 3m[24]1.28 2.5m[24]
1.30 [24]1.29 1m[24]- 23 - 39. 20031m3m(bonding)1.311.32[25]1.31
[25]1.32 SEM[25] - 24 - 40.
2004ICP(bulkmicromachining)2m(Plasma-Enhanced Chemical Vapor
Deposition PECVD) 0.7m1.33PDMS1.34[26]1.33 PECVDSEM[26] 1.34 [26]-
25 - 41. 2004(Berkeley Sensor andActuator
Center)J.SeoPDMS1.351.37[27]1.35 [27] 1.36 [27]1.37 SEM[27]- 26 -
42. 2006Adrian Y. LauPaul J. Hung1.381.40[28]1.38 [28] 1.39 [28]
1.40 SEM[28]- 27 - 43. 2006Brian Matthews2003BOSCH
ICP(smooth)1.41[29]1.41 [29] - 28 - 44. 2006Thomas
SordePECVDPECVDPECVDE1.421.43[30] 1.42 PECVD()()SEM[30]1.43
PECVD[30]- 29 - 45. 2007Z.L. Zhang(SOI)0.5m1.44[31] 1.44
SOI()()()SEM[31]- 30 - 46. 2007(low temperature
oxideLTO)41.451.48[32] 1.45 LTO[32]1.46 LTO[32] - 31 - 47. 1.47
LTO[32] 1.48 LTOSEM[32] - 32 - 48. 1.7 (1)(2) - 33 - 49. (3)(4)(5)-
34 - 50. - 35 - 51. 1.8 1.49 1.49 - 36 - 52. 2.1 1976 Neher Sakmann
(patch clamp recordingtechnique)(Gigaohm seal)1980 (gene
cloning)Neher Sakmann 1991 2.2 ()(pA) I-V(converter)(command
voltageVCMD)10G(Rseal - 37 - 53. )100%2.12.1 2.1RsRseal Ip R seal
Rs1~5MRseal10G =-1 IpI (Rs+R seal )I-V(Rf) A1 A2 2.3 2.2(Single
channel recording)(Cell-attached mode)- 38 - 54.
(Inside-out)(Outside-out)(Open cell-attached inside-out
mode)(Perforated vesicle outside-out mode)(Perforated patch
mode)Inside-out Open-cell-attachedOn cellcell open pullnystatin
suck Perforated-vesicle Outside-outPerforated-patch Hole-cellpull
pull2.22.3.1 (Cell-attached mode On-cell mode) - 39 - 55. 2.3.2
(Inside-out mode) (Gigaohm seal)(excised patch
membrane)(washout)(excision)()run down (run up) () - 40 - 56. 2.3.3
(Open cell-attached mode) 2.3.4 (Conventional whole-cell mode Hole
cell mode) (Whole cell mode)(Conventional)(hole cell
mode)(Perforatedpatch mode)(washout) - 41 - 57. 2.3.5 (Outside-out
mode) 2.3.6 (Perforated patch mode) (Slowwhole-cell
mode)HornMarty(nystatin) B(amphotericin B)(nystatin-patch
mode)(series resistanceRs) - 42 - 58. 2.3.7 (Perforated vesicle
outside-out mode) 2.4 (Johnson noise)(seal resistanceRseal) - 43 -
59. (dual gap) 2.5 2.5.1 2.5.1.1 (Pulling)(puller)() (borosilicate)
( Pyrex) (aluminosilicate)()()Rs 2.3 Rs>Rs1~5m 1~5M - 44 - 60.
2.3 2.5.1.2 (Sylgard coating) (stray capacitanceCs) Cs (Cg)(Cc)
2.4- 45 - 61. 2.4 2.5.1.3 (heat polish) 2.5.1.4 (solution filling)
- 46 - 62. (particle) ( 0.2m) (back-fill) 2.5.2 (Gigaohm seal)
HEKAEPC-7 http://www.heka.com/download/manuals/m_epc8+7.pdf Search
(Voltage clampVC)(off scale)- 47 - 63. () Reset Vp-OFFSET (Vp) 1mV
10~50ms 10mV 2.5.3 SEARCH MODEVC(Voltage Clamp) MODE On Off (Surge
current)(fast transient) - 48 - 64. C-FASTr-FAST() On-cell
(50~200mV/pA) Vp(Vm)(Vin) Vp Vm= -Vp(excised) Vm=-VpVm=Vp 2.5.4
(-30 ~ -200cm H2O) (zapping) 20nA 10mV/pA(Surge current)(slow
transient)- 49 - 65. CC(Current Clamp)MODECC+COMM MODE
V-HOLD(Holding potential)VC MODE
Vm=VpC-SLOWC-SERIESC-SLOWC-SERIES(Cm)(Rs)%-COMP(Series resistance
compensation) C-SLOWC-SERIES (single channel event) - 50 - 66.
2.5.5 (nystatin) (slow whole-cell recording)(50mg/ml ) DMSO -20C
1~2 DMSO perforated patch excise nystatin (perforated vesicle)
outside-outmode 2.6 2.6.1 (Capacitive surge measurement) V0 2-1 V0
Rm-t RmRsCm I(t) = ( ) (1+)exp( ) , where =( 2-1)Rm+Rs Rs Rm+Rs 2.5
2-2 - 51 - 67. q q V0Cm Cm Rm>>Rs V=t 2-2 V dV t I(t) = () +
Cm()=() + Cm( 2-2)Rm dt Rm Cm (jump value) Cm Rs Rm Cm 2.5 - 52 -
68. 2.6.2 (phase-sensitive detection methodPSD method) Rm>>Rs
90 (Lock-inamplifier)Neher Marty (exocytosis)Rs Rm PSD 0 90 Em CmRm
Rs() 2.7 2.7.1 (fast capacitance compensation) (capacitative surge)
(Cp)CpCp(VCMD) - 53 - 69. CpCp 2.6VCMD(A3)VCMD C-FAST A3 R-FASTC1Cp
2.6 - 54 - 70. 2.7.2 (Slow capacitative compensation) Cm(Series
resistanceRs)Cm(Rm)RsRs=5MCm=20pF 100s 2.7VCMDR2C2 100
R2(C-SERIES)C2(SLOW RANGE,pF)A4 C-SLOW A4 fast
capacitancecompensationA3C1 2.7 - 55 - 71. 2.7.3 (Series resistance
compensation) (Rs)RsRsCm (SLOW transient) RsRs=5MIp=2pARs10mV ( 2.8
Rscompensation%-COMP)VCMDRs 2.8 - 56 - 72. 3.1 3.1 - 57 - 73. 525um
RIE 1m- 58 - 74. BOE TMAH BOE - 59 - 75. BOSCH ICP 3.1 - 60 - 76.
RIETMAHRIEWaferTMAH(80C~90C)(pin hole)1m~2mTMAH(back side
alignment)1m4m4m20malignment key - 61 - 77.
BOETMAH50m50mTMAH3mTMAH20mTMAHSi WaferDI WaterICP- 62 - 78. TMAH3.2
(1)TMAH(Etching stop layer) (Over etching) TMAH(2)- 63 - 79. ICP(3)
TMAH(self alignment) 3.2.1 ( alignment key) - 64 - 80. 640m Wafer
525m 15m TMAH Si-100 Si-111 301 723m 640mTMAH Si-100 Si-111 3.2TMAH
30 80C TMAH (30 ) 80C 90C 90C TMAH Si-111 Si-100 3.3-(a) 3.3-(b) -
65 - 81. 3.2 TMAH (alignment key)20m~40m10m~50m3.4-(a)3.4-(b)
(alignment key)3m4m3.5-(a)3.5-(b)- 66 - 82. 3.3-(a) -1 3.3-(b) -2 -
67 - 83. 3.4-(a) -1 3.4-(b) -2 - 68 - 84. 3.5-(a) -1 3.5-(b) -2 -
69 - 85. 3.2.2 3.6()ICP - 70 - 86. Si wafer after RCA clean 525m
LPCVD 1m Low stress Nitride Oxidation 1m Oxide 1m1m 1m1m PECVD 3m
NitridePECVD 3m Nitride3m3m LithographyLithography2.2m2.2m
640m640m- 71 - 87. ICP or RIE trans patternICP or RIE trans
pattern640m 640mTMAH wet etching(14HR~15HR) TMAH wet
etching(14HR~15HR)20m~30m20m~30m640m 640m Lithography
Lithography2.2m2.2m ICP or RIE trans patternICP or RIE trans
pattern1m1m2m2m- 72 - 88. Lithography E-Beam Evaporator Al
30004m1.8m 3000 ICP trans pattern Lithography 4m4m 1.8m Back side
PECVD Oxide 5000 Al wet etching 4m4m 1.8m3.7m Front side PECVD
Oxide 2mICP trans pattern3m4m1m4m- 73 - 89. Dip BOE 3m1m4m Front
side PECVD Oxide 2m2m 1m6m Dip BOE2m 1m6m Front side PECVD Oxide 1m
1m 1m7m 1m 3.7m 20m~30m525m 1m640m 3.6 Si3 N 4SiO2- 74 - 90. 4.1
RCA cleanRCA clean(NDL)(clean room) (Wet Bench)1. CARO120C6002. DI
water6M.cm3. DHF( Diluted HF )604. DI water6M.cm5. SC175C6006. DI
water6M.cm7. SC275C6008. DI water6M.cm9. wafer4.2
(OxidationFurnace)4.1 - 75 - 91. 1. 1092C2. 3. 1092C4. 5.
(Nano-specification)1m 4.1 4.3 - 76 - 92. Low Stress Si3N4 850C
180mtorrSiH2Cl2NH3Low StressSi3N4 3mLow stress(Nano-specification)
1m4.4 SiOy NDLSiOy2150 /min625
/min48minPECVDNDL(n&kanalyzer)4m4.5 SiNx NDLSiNx2200 /min- 77 -
93. 152 /min1000 /min30minNDL(n&k analyzer)4m4.6 NDL(Spin
Coater)NDL(Mask aligner MA150CC)1. 110C2. Spin coatingHMDS a. 0
rpm200 rpm in 15 b. stay 200 rpm in 15 c. 200 rpm4000 rpm in 15 d.
stay 4000 rpm in 120 e. 4000 rpm0 rpm in 303. 90C1204. Spin
coatingAZ 5214E a. 0 rpm400 rpm in 15 b. stay 400 rpm in 30 - 78 -
94. c. 400 rpm5000 rpm in 15d. stay 5000 rpm in 120e. 5000 rpm0 rpm
in 30 5. 90C120 6. AZ 5214E 2msoft contact 10 7. AZ 300120DI Water
8. 110C180 4.2OM 4.2 OM 4.7 BOE10minDIwater NDL(ICP) 10mtorr 15C
SF6 45sccmRF POWER 15WICP POWER 1300W18min 4.3OM - 79 - 95. 4.3 OM
Si wafer ICP 4.8 TMAH TMAH 25%80C1290C23TMAH4.4 - 80 - 96.
1.5mm4.54.64.74.84.94.10-(a)4.10-(b)4.114.124.13-(a)4.13-(b)TMAHTMAHPH4.144.154.16-(a)4.16-(b)OM4.17-(a)4.17-(b)OM
- 81 - 97. 4.4 4.5 4.6 4.7 spacer 4.8 spacer 4.9 TMAH- 82 - 98.
4.10-(a) TMAH 4.10-(b) TMAH10mm 4.11 TMAH4.12 10mm10mm4.13-(a)
4.13-(b) - 83 - 99. 4.14 4.15 10m 20m4.16-(a) 4.16-(b) 10m 10m
4.17-(a) SiO24.17-(b) SiO2 - 84 - 100. 4.9 NDL(Spin Coater)NDL(Mask
aligner MA150CC)1. UV4.182. 90C3. Spin coatingHMDS a. 0 rpm200 rpm
in 15 b. stay 200 rpm in 15 c. 200 rpm4000 rpm in 15 d. stay 4000
rpm in 120 e. 4000 rpm0 rpm in 304. 90C1205. Spin coatingAZ 5214E
a. 0 rpm400 rpm in 15 b. stay 400 rpm in 30 c. 400 rpm5000 rpm in
15 d. stay 5000 rpm in 120 e. 5000 rpm0 rpm in 306. 90C1207. AZ
5214E 2mhard contact vacuum88. AZ 300120DI Water- 85 - 101. 9.
90C30010. UV4.18 UV UV Spin coating MA150CC TMAH UV 4m wafer UV- 86
- 102. UV 4.10 NDL(ICP) 10mtorr 15C SF6 45sccmRF POWER 15WICP POWER
1300W18min 8mtorr15C O2 8sccmC4F8 45sccmRF POWER 80WICP
POWER2500W3min50sC4F84.19-(a)Si3N4OM4.19-(b)SiO2OM10m 10m 4.19-(a)
Si3N4 4.19-(b) SiO2 - 87 - 103. 4.11 1 /s3000 4.12 NDL(Spin
Coater)NDL(Mask aligner MA150CC)1. UV2. 90C3. Spin coatingAZ 5214E
a. 0 rpm400 rpm in 15 b. stay 400 rpm in 30 c. 400 rpm7000 rpm in
15 d. stay 7000 rpm in 120 e. 7000 rpm0 rpm in 304. 90C1205. AZ
5214E 2mhard contact vacuum56. AZ 300180DI Water7. 90C3008. UV- 88
- 104. HMDS HMDS HMDS 200 DIWater HMDS DI Water HMDSDI Water HMDS
HMDS HMDS 2m UV - 89 - 105. HMDS HMDS HMDS m 4.13 NDL(PR strip
& wet etchingchemical hood)NDLAl(H3PO4HNO3CH3COOHH2O=16112)1800
/min54.14 NDL(ICP) 10mtorr 15C SF6 45sccmRF POWER 15WICP POWER
1300W80min 8mtorr15C O2 8sccmC4F8 45sccmRF POWER 80WICP POWER - 90
- 106. 2500W15min30s4.204.21 10m 10m4.20 4.21 ICP 10mtorr 15C SF6
45sccmRF POWER 50WICP POWER 2000W114m4m3m4m- 91 - 107.
2m2mICP124.1ICPRF PowerRF PowerICP PowerRF Power10mtorr 15C SF6
45sccmRF POWER 15WICPPOWER 1300W12.51.8m4.5m- 92 - 108. SF6 RF ICP
10 PowerPower (/min) 15C 10mtorr 45sccm 15 1200566YES15C 10mtorr
45sccm 15 1300700YES15C 10mtorr 45sccm 15 1500750 YES(but few)15C
10mtorr 45sccm 15 2000875 NO15C 10mtorr 45sccm 20 1700900 NO15C
10mtorr 45sccm 25 1700 XNO15C 10mtorr 45sccm 30 1700 XNO15C 10mtorr
45sccm 50 2000 XNO 4.1 SF6(X) 4.15 PECVD 1. (625 /min)16min2. (625
/min)32min4.22 10m4.22 PECVD - 93 - 109. 3. BOE4.23 10m 4.23 BOE4.
(625 /min)32min 4.24 10m4.24 PECVD- 94 - 110. 5. BOE4.2510m 4.25
BOE6. (625 /min)32min 4.2610m4.26 PECVD7. (625 /min)16min - 95 -
111. Ref.[29]SEMPECVD1m ~2m3mBOE1m - 96 - 112. SEM1.
BOE4.27-(a)(b)4.27-(a) BOE4.27-(b) BOE - 97 - 113. 2. BOEPECVD
4.28-(a)(b) 4.28-(a) BOE 4.28-(b) BOE - 98 - 114. 3. BOEPECVD
4.29-(a)(b)(c) 4.29-(a) BOE 4.29-(b) BOE - 99 - 115. 4.29-(c)
Tilt20 4.16 3m10m2 50m2 PDMSPDMSPDMS - 100 - 116. 5.1 C4F8F/CRF
PowerICPPowerC4F8F/C5.15.2200m10m 5.1 5.2 C4F8- 101 - 117. 5.2
TMAHTMAH5.35.4 20m 10m 5.3 5.4 - 102 - 118. (Chemical Mechanical
PolishingCMP) 5.3 ICP 5.5-(a)(b)ICP 10m5.5-(a) OM5.5-(b) SEM- 103 -
119. 5.4 5.65.7(cutting)CO2 10m 10m5.6 5.7 5.5 PECVD - 104 - 120.
PECVD(EDX)5.85.8 - 105 - 121. 5.6 1. 2. - 106 - 122. 3. CMOS
MEMSCMOS100nm- 107 - 123. [1] , , , , , ,2006[2] , ,, ,2003[3] T.
Lehnert, R. Netzer, Realization of hollow SiO2 micronozzles for
electrical measurements on living cell , Apply physics letters,
vol. 81,2002[4] 2006[5] 2000[6] Quasi-LIGA-like 1999[7] Answers.com
2007 6 http://www.answers.com/topic/accelerometer?cat=health/[8]
2004[9] Sandia National Laboratories 2007 6
http://mems.sandia.gov/scripts/index.asp- 108 - 124. [10] Urbanski
et al., Applied Physics Letters, 2006[11] Protron Mikrotechnik 2007
6 http://www.protron-mikrotechnik.de/products/products_rf_e.htm[12]
2007 6 http://www.sciscape.org/news_detail.php?news_id=1286/[13]
1991[14] 2007 6
http://brc.se.fju.edu.tw/nobelist/199x/p1991.htm/[15]
Nobelprize.org 2007 6
http://nobelprize.org/nobel_prizes/chemistry/laureates/2003/public.html/[16]
N. Fertig, Ch. Meyer, R. H. Blick, Ch. Trautmann, and J. C.
Behrends, Microstructured glass chip for ion-channel
electrophysiology, The American Physical Society, 2001[17] Sophion
20076http://www.sophion.dk/[18] N. Fertig, R. H. Blick, J. C.
BehrendsWhole cell patch clamp recording performed on a plannar
galss chip, Biophysical Journal, Vol.82, pp. 3056-3062, 2002[19] K.
G.. Klemic, J. F. Klemic, M. A. Reed, F. J. SigworthMicromolded
PDMS planar electrode allows patch clamp electrical recordings from
cells , Biosensors and Bioelectronics, Vol.17, pp. 597604, 2002-
109 - 125. [20] T. Lehnert, R. Netzer, Realization of hollow SiO2
micronozzles for electrical measurements on living cell , Apply
physics letters, vol. 81,2002[21] M. Tanabe, J. Makinodan,
Development of micro channel array with detecting electrodes for
electrophysiological biomedical sensor , Micro Electro Mechanical
Systems, pp. 407-410, 2003[22] A. Stett, V. Bucher, C. Burkhardt.
U. Weber, and W. Nisch,Patch-clamping of primary cardiac cells with
micro-openings in polyimide films , Medical & Biological
Engineering & Computing, 2003[23] Cytocentrics CCS 2007 6
http://www.cytocentrics.com/[24] B. Matthews and W. Judy,
Characterization of a Micromachined Planar Patch Clamp for Cellular
Electrophysiology, IEEE, 2003[25] N. Picollet-Dhahan, F. Sauter, F.
Ricoul, C. Pudda, F. Marcel, T. Sordel, F. Chatelain, and I.
Chartier, Multi-Patch: A chip-based ion-channel assay system for
drug screening, International Conference on MEMS, NANO and Smart
Systems, 2003[26] R. Pantoja, M. Nagarah, M. Starace, A. Melosh, R.
Blunck, F. Bezanilla, and R. Heath, Silicon chip-based patch-clamp
electrodes integrated with PDMS microfluidics, Biosensors and
Bioelectronics ,Vol.20, pp.509517, 2004- 110 - 126. [27] J. Seo, C.
Ionescu-Zanetti, J. Diamond, R. Lal, L. P. Lee, Integrated multiple
patch-clamp array chip via lateral cell trapping junctions, Applied
Physic Letters, 2004[28] Adrian Y. Lau, Paul J. Hung, Angela R. Wu
and Luke P. Lee, Open-access microfluidic patch-clamp array with
raised lateral cell trapping sites, Lab on a Chip, Vol. 6, pp.
15101515,2006[29] Brian Matthews, Jack W. Judy, Design and
Fabrication of a Micromachined Planar Patch-Clamp Substrate With
Integrated Microfluidics for Single-Cell Measurements, Journal of
Microelectromechanical Systems, Vol. 15, pp. 214222,2006[30] Thomas
Sordel, Stephanie Garnier-Raveaud, Fabien Sauter, Catherine Pudda,
Hourglass SiO2 coating increases the performance of planar
patch-clamp, Journal of Biotechnology, Vol. 125, pp.
142154,2006[31] Z.L. Zhang, T. Asano, H. Uno, R. Tero, M. Suzui, S.
Nakao, T. Kaito, Fabrication of Si-based Planar Type Patch-Clamp
Biosensor Using Silicon on Insulator Substrate Thin Solid Films,
2007[32] Sha Li, Liwei Lin, A single cell electrophysiological
analysis device with embedded electrode, Sensors and Actuators A,
Vol. 134, pp. 2026,2007- 111 - 127. [33]
http://www2.haut.edu.cn/[34] 2005[35] 2006[36] VLSI 1997[37]
2003[38] 1994 - 112 - 128. ARCA
cleanRCA1965RCA1970RCARCACARODHFSC-1SC-2(1)CARO
RCA(hydrophobic)31120- 130(2)DHF (10
~25)(hydrophobic)(D.I.water)(rinse)- 113 - 129. (3)SC-1 Standard
Clean 1 SC-1513012970 - 80SC-1(4)SC-2 Standard Clean 2
SC-2613013770 - 80SC-2- 114 - 130. B Chemical Vapor DepositionCVD
(thin film)(dielectrics)()CVD B.1 (Atmospheric Pressure Chemical
VaporDepositionAPCVD)(Oxidation Layer)
(oxidation)(SiO2)(mask)(thermal oxidation)SiO2 56SiO2 (Wet
Oxidation)(Dry Oxidation) - 115 - 131. (1)Si(s)+ O2(g)SiO2(s)
(2)Si(s)+2H2O(g)SiO2(s)+ 2H2(g) (3)
2H2(g)+O2(g)2H2O(g)Si(s)+2H2O(g)SiO2(s)+ 2H2(g) SiO2SourceSiO2
>> B.2 (Low Pressure Chemical Vapor DepositionLPCVD) LPCVD-
116 - 132. LPCVD Si3N4700C900C 200500mTorr 30
/min(DichlorosilaneSiH2Cl2)(ammoniaNH3)(SilaneSiH4)
NH3NH3SiH2Cl21013SiH 2Cl2(g) +7NH 3(g) Si3 N 4(s) +3NH 4Cl(s)
+3HCl(g) +6H 2(g) (crack)1m NH3SiH2Cl2850C 500mTorr - 117 - 133.
B.3 (Plasma-Enhanced Chemical VaporDepositionPECVD)B.3.1
(photoionization)(field emission)(secondary electrons)(ionization
collision)e- + A A+ + 2e-e-AA+ - 118 - 134. (multiplication
process)(DC)(AC) B.3.2 PECVD(Thermal
Budget)PECVD(Ionized)PECVDLPCVDPECVD300C(Stoichiometry)CVDSiNxSiOyPECVD-
119 - 135. RF+N SiH 4(g) +NH3(g) SiN x(s) +H 2(g)2(g) RF+N SiH 4(g)
+N 2O(g) SiO y(s) +N 2(g) +H 2(g) 2(g)
PECVD(IonBombardment)(Internalstress) - 120 - 136. C Lithography
(Mask)UV2D(Photoresist)3D(PhotomaskFabrication)(Pretreatment)(Priming)(Coating
Photoresist) (Soft Bake) (Exposure) (Development) (Hard
Bake)(Photoresist Strip)(1)AutoCAD CAD(Computer-Aided
Design)(Quarts)(Glass) - 121 - 137. (2) (3) (4)(Priming)
(HexamethyldisilazaneHMDS)(Surface Energy)(5) - 122 - 138. (4)(5)a.
1:1b. 1:110~20m - 123 - 139. c. d. (6)(7)- 124 - 140. . . (Photo
Active Compund)()()(Inhibitor)().
(Solvent)(Polymer)(Photo-initiator)()(Swelling)3m- 125 - 141. - 126
- 142. Wet Etching D.1 (Hydrofluoric Acid)SiO2(s) +6HF(aq) H 2(g)
+SiF6(g) +2H 2O(g) (Doping)PSG(Phosphosilicate
Glass)BPSG(Borophosphosilicate Glass) SiO2 SiO2(Ammonium
Fluoride)(Buffer Agent)BOE(Buffer Oxide Etch)- 127 - 143. D.1.2
D.1.2.1 (1) (2) (3) - 128 - 144. abc a=b=c, ===90 abc (4) A ,- 129
- 145. a. XYZb. abc XYZ A 11c. 1/1/11/1 011d. A
(011)(110)(100)(111) - 130 - 146. OE a. XYZ O b.() OE DD XYZ 111c.
OE [111] - 131 - 147. [100][110][111] (5) K D.1.2.2 (111)(1)
(111)(2) (111)- 132 - 148. (3) (111) EDP(ethylenedamine
pyrocatechol water)KOH(potassium hydroxide)TMAH(Tetra Methyl
Ammonium Hydroxide)(1) EDP
EDPethylenedaminepyrocatecholpyrocatechol3.7035m/hr18m/hrpyrocatechol(OH-)2NH
2 (CH 2 ) 2 NH 2 +Si+3C6 H 4 (OH) 2 2NH 2 (CH 2 ) 2 NH 3+ +[Si(C6 H
4O 2 )3 ]-2 +2H 2 EDP(2)KOH KOH- 133 - 149.
1180C80CKOH10~15wt%30wt%KOH()EDP(20~30)KOHSi (s) +KOH (aq) +H 2O
(l) KSiO 3(aq) +2H 2(g) (3)TMAH (Tetramethyl ammonium
hvdroxideTMAH)(CH3)4NOH3070C ~90C10 wt %12.5m/hr90C20 wt
%0.68m/min15wt%(hill-lock)20 wt%TMAHPHPHSi (s) +(CH 3 ) 4 NOH (aq)
+H 2O (l) (CH 3 ) 4 NSiO 3(aq) +2H 2(g) - 134 - 150. E Dry Etching
(Momentum Transfer)(Sputtering Etching)90(Plasma
Etching)(ReactiveIon EtchRIE)RIE80 - 135 - 151. 9011401 E.1 (High
Density Plasma Etching) HDP(Electron Cyclotron
ResonanceECR)(Helicon)(Inductively Coupled PlasmaICP)ECRHDP(1)ECR
ECR2.45GHz(Solenoidal Magnet)RFHDP(2) HDP Helicon HDPRF RF(Helicon
Wave)HDPRF - 136 - 152. (3)ICP ICPHDPRFRF ICPHDPHDPICP E.2 (1)SiO2
(Carbon TetrafluorideCF4)CHF3C2F6C3F8C4F8SF6CF4CF4CF2- 137 - 153.
SiO2Si(SiF4)CF4(g) 2F(g) +CF2(g) SiO 2(s) +4F(g) SiF4(g) +2O (g)SiO
2(s) +2CF2(g) SiF4(g) +2CO (g) CF4CF4COCO2COF2CF4SiO2 CF4HF
CF4F/CF/C - 138 - 154. CF4F/C SiO2CF4SiO2(2)Si3N4NF3 - 139 - 155.
BOSCHSF6SF6Si3N4SF6(g) SF6-x (g) +xF(g) Si 3 N 4(s) +12F(g)
3SiF4(g) +4N (g) - 140 - 156. F Soft
Lithography(PolydimethylsiloxanePDMS)(a)PDMSPDMS(b)PDMSPDMSPDMS -
141 - 157. PDMSPDMS SAMSAM PDMSPDMS SAM SAM PDMSPDMS SAM SAM (a)
(b) PDMSPDMS22dyne/cm2PDMS PDMSPDMS - 142 - 158.
SH-(CH2)11-COOHPDMSPDMSPDMS60PDMSSH-(CH2)11-COOHSH-(CH2)11-COOH(Van
derWaals force)self-assembled monolayers,SAMCOOH - 143 - 159. 71 04
07 800 (06)[email protected]
(2005/09~2007/07)(2000/09~2005/06)
