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August 2016 DocID024932 Rev 4 1/21
STB40N60M2, STP40N60M2,STW40N60M2
N-channel 600 V, 0.078 Ω typ., 34 A MDmesh M2 Power MOSFETs in D2PAK, TO-220 and TO-247 packages
Datasheet − production data
Figure 1. Internal schematic diagram
Features
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected
Applications• Switching applications
• LLC converters, resonant converters
DescriptionThese devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
AM01476v1
D2PAKTO-220
TO-247
13
2
TAB
12
3
TAB
12
3
Order code VDS @ TJmax RDS(on) max ID
STB40N60M2
650 V 0.088 Ω 34 ASTP40N60M2
STW40N60M2
Table 1. Device summary
Order code Marking Packages Packing
STB40N60M2
40N60M2
D2PAK Tape and reel
STP40N60M2 TO-220Tube
STW40N60M2 TO-247
www.st.com
Contents STB40N60M2, STP40N60M2, STW40N60M2
2/21 DocID024932 Rev 4
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1 D2PAK (TO-263) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2 TO-220 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.3 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
DocID024932 Rev 4 3/21
STB40N60M2, STP40N60M2, STW40N60M2 Electrical ratings
21
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VGS Gate-source voltage ± 25 V
ID Drain current (continuous) at TC = 25 °C 34 A
ID Drain current (continuous) at TC = 100 °C 22 A
IDM(1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 136 A
PTOT Total dissipation at TC = 25 °C 250 W
dv/dt (2)
2. ISD ≤ 34 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V.
Peak diode recovery voltage slope 15 V/ns
dv/dt(3)
3. VDS ≤ 480 V
MOSFET dv/dt ruggedness 50 V/ns
Tstg Storage temperature range- 55 to 150
°C
Tj Operating junction temperature range °C
Table 3. Thermal data
Symbol ParameterValue
UnitD2PAK TO-220 TO-247
Rthj-case Thermal resistance junction-case 0.50 °C/W
Rthj-pcb Thermal resistance junction-pcb (1)
1. When mounted on 1 inch² FR-4, 2 Oz copper board
30 °C/W
Rthj-amb Thermal resistance junction-ambient 62.5 50 °C/W
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
IARAvalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
6 A
EASSingle pulse avalanche energy (starting Tj =25°C, ID = IAR; VDD= 50 V)
500 mJ
Electrical characteristics STB40N60M2, STP40N60M2, STW40N60M2
4/21 DocID024932 Rev 4
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSSDrain-source breakdown voltage
VGS = 0, ID = 1 mA 600 V
IDSSZero gate voltage drain current
VGS = 0, VDS = 600 V 1 µA
VGS = 0, VDS = 600 V, TC = 125 °C (1)
1. Defined by design, not subject to production test
100 µA
IGSSGate-body leakagecurrent
VDS = 0, VGS = ± 25 V ±10 µA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
RDS(on)Static drain-source on-resistance
VGS = 10 V, ID = 17 A 0.078 0.088 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
- 2500 - pF
Coss Output capacitance - 117 - pF
CrssReverse transfer capacitance
- 2.4 - pF
Coss eq.(1)
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
Equivalent output capacitance
VDS = 0 to 480 V, VGS = 0 - 342 - pF
RGIntrinsic gate resistance
f = 1 MHz, ID = 0 - 4.4 - Ω
Qg Total gate charge VDD = 480 V, ID = 34 A,VGS = 10 V(see Figure 17)
- 57 - nC
Qgs Gate-source charge - 10 - nC
Qgd Gate-drain charge - 25.5 - nC
DocID024932 Rev 4 5/21
STB40N60M2, STP40N60M2, STW40N60M2 Electrical characteristics
21
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VDD = 300 V, ID = 34 A, RG = 4.7 Ω, VGS = 10 V(see Figure 16 and Figure 21)
- 20.5 - ns
tr Rise time - 13.5 - ns
td(off) Turn-off-delay time - 96 - ns
tf Fall time - 11 - ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current - 34 A
ISDM (1)
1. Pulse width limited by safe operating area.
Source-drain current (pulsed) - 136 A
VSD (2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 34 A, VGS = 0 - 1.6 V
trr Reverse recovery timeISD = 34 A, di/dt = 100 A/µsVDD = 60 V (see Figure 18)
- 440 ns
Qrr Reverse recovery charge - 8.2 µC
IRRM Reverse recovery current - 37 A
trr Reverse recovery time ISD = 34 A, di/dt = 100 A/µsVDD = 60 V, Tj = 150 °C(see Figure 18)
- 568 ns
Qrr Reverse recovery charge - 11.5 µC
IRRM Reverse recovery current - 40.5 A
Electrical characteristics STB40N60M2, STP40N60M2, STW40N60M2
6/21 DocID024932 Rev 4
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for D2PAK and TO-220
Figure 3. Thermal impedance D2PAK and TO-220
ID
10
1
0.1 1 100 VDS(V)10
(A)
Operation in
this
area is
Limite
d by max RDS(o
n)
10µs100µs1ms
10ms
0.1
Tj=150°CTc=25°CSingle pulse
100
AM16098v1
Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247ID
10
1
0.1 1 100 VDS(V)10
(A)
Opera
tion
in th
is ar
ea is
Limite
d by
max
RDS(o
n)
10µs
100µs
1ms
10ms
0.1
Tj=150°CTc=25°CSingle pulse
100
AM16099v1
Figure 6. Output characteristics Figure 7. ransfer characteristics
ID
50
30
10
00 5 VDS(V)10
(A)
15
70
80
5V
6V
VGS=7, 8, 9, 10V
20
40
60
90
20
4V
AM16100v1ID
60
40
20
00 4 VGS(V)8
(A)
2 6 10
80
10
30
50
70
VDS=18V
AM16101v1
DocID024932 Rev 4 7/21
STB40N60M2, STP40N60M2, STW40N60M2 Electrical characteristics
21
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance
Figure 10. Capacitance variations Figure 11. Output capacitance stored energy
Figure 12. Normalized gate threshold voltage vs temperature
Figure 13. Normalized on-resistance vs temperature
VGS
6
4
2
00 20 Qg(nC)
(V)
60
8
30 40
10
VDD=480VID=34A12
300
200
100
0
400
500VDS
10 50
VDS(V)
AM16102v1RDS(on)
0.077
0.076
0.0750 8 ID(A)
(Ω)
4 12
0.078
VGS=10V
16
0.079
0.080
0.081
20 24 28
0.082
AM16103v1
C
1000
100
10
10.1 10 VDS(V)
(pF)
1 100
Ciss
Coss
Crss
10000
AM16104v1 Eoss
5
00 100 VDS(V)
(µJ)
400200 300 500 600
10
15
AM16105v1
VGS(th)
0.9
0.8
0.7
0.6TJ(°C)
(norm)
-50
1.0
ID=250µA
0 50 100
1.1
AM15718v1 RDS(on)
2.1
1.7
1.3
0.9
TJ(°C)
(norm)
0.5-50 0 50 100
ID=17 A
AM15719v1
Electrical characteristics STB40N60M2, STP40N60M2, STW40N60M2
8/21 DocID024932 Rev 4
Figure 14. Normalized V(BR)DSS vs temperature Figure 15. Source-drain diode forward vs temperature
V(BR)DSS
-50 TJ(°C)
(norm)
00.9
0.94
0.98
1.02
1.06
ID=1 mA
50 100
1.1
AM15714v1
VSD
0 ISD(A)
(V)
60.5
0.6
0.7
0.8
0.9
12 18
1 TJ= -50°C
TJ= 25°C
TJ= 150°C
24 30
GIPD240920132025FSR
DocID024932 Rev 4 9/21
STB40N60M2, STP40N60M2, STW40N60M2 Test circuits
21
3 Test circuits
Figure 16. Switching times test circuit for resistive load
Figure 17. Gate charge test circuit
Figure 18. Test circuit for inductive load switching and diode recovery times
Figure 19. Unclamped inductive load test circuit
Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF3.3μF
VDD
AM01469v1
VDD
47kΩ 1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200μF
PW
IG=CONST100Ω
100nF
D.U.T.
VG
AM01470v1
AD
D.U.T.
SB
G
25 Ω
A A
BB
RG
G
FASTDIODE
D
S
L=100μH
μF3.3 1000
μF VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200μF
3.3μF VDD
AM01473v1
VDS
ton
tdon tdoff
toff
tftr
90%
10%
10%
0
0
90%
90%
10%
VGS
Package information STB40N60M2, STP40N60M2, STW40N60M2
10/21 DocID024932 Rev 4
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
DocID024932 Rev 4 11/21
STB40N60M2, STP40N60M2, STW40N60M2 Package information
21
4.1 D2PAK (TO-263) package information
Figure 22. D²PAK (TO-263) type A package outline
Package information STB40N60M2, STP40N60M2, STW40N60M2
12/21 DocID024932 Rev 4
Table 9. D²PAK (TO-263) type A mechanical data
Dim.mm
Min. Typ. Max.
A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50 7.75 8.00
D2 1.10 1.30 1.50
E 10.00 10.40
E1 8.50 8.70 8.90
E2 6.85 7.05 7.25
e 2.54
e1 4.88 5.28
H 15.00 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R 0.4
V2 0° 8°
DocID024932 Rev 4 13/21
STB40N60M2, STP40N60M2, STW40N60M2 Package information
21
Figure 23. D²PAK footprint(a)
a. All dimension are in millimeters
Package information STB40N60M2, STP40N60M2, STW40N60M2
14/21 DocID024932 Rev 4
4.2 TO-220 package information
Figure 24. TO-220 type A package outline
DocID024932 Rev 4 15/21
STB40N60M2, STP40N60M2, STW40N60M2 Package information
21
Table 10. TO-220 type A mechanical data
Dim.mm
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13 14
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95
Package information STB40N60M2, STP40N60M2, STW40N60M2
16/21 DocID024932 Rev 4
4.3 TO-247 package information
Figure 25. TO-247 package outline
DocID024932 Rev 4 17/21
STB40N60M2, STP40N60M2, STW40N60M2 Package information
21
Table 11. TO-247 package mechanical data
Dim.mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
Packing information STB40N60M2, STP40N60M2, STW40N60M2
18/21 DocID024932 Rev 4
5 Packing information
Figure 26. Tape
P1A0 D1
P0
F
W
E
D
B0K0
T
User direction of feed
P2
10 pitches cumulativetolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
B1
For machine ref. onlyincluding draft andradii concentric around B0
AM08852v1
Top covertape
DocID024932 Rev 4 19/21
STB40N60M2, STP40N60M2, STW40N60M2 Packing information
21
Figure 27. Reel
Table 12. D²PAK (TO-263) tape and reel mechanical data
Tape Reel
Dim.mm
Dim.mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base qty 1000
P2 1.9 2.1 Bulk qty 1000
R 50
T 0.25 0.35
W 23.7 24.3
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At slot location
T
Tape slot in core fortape start 25 mm min.width
AM08851v2
Revision history STB40N60M2, STP40N60M2, STW40N60M2
20/21 DocID024932 Rev 4
6 Revision history
Table 13. Document revision history
Date Revision Changes
01-Jul-2013 1 First release.
23-Sep-2013 2
– Added: TO-220FP and I2PAKFP packages– Inserted: VISO in Table 2– Modified: values in Table 4, the entire typical values in Table 6, 7
and 8– Updated: Section 4: Package mechanical data.
– Minor text changes
13-May-2014 3– The part numbers STF40N60M2 and STFI40N60M2 have been
moved to a separate datasheet– Minor text changes
09-Aug-2016 4
Updated title, features and description in cover page.
Updated Table 2: Absolute maximum ratings, Table 5: On /off states and Table 8: Source drain diode.
Updated Section 4.1: D2PAK (TO-263) package information and Section 4.2: TO-220 package information.
Minor text changes.
DocID024932 Rev 4 21/21
STB40N60M2, STP40N60M2, STW40N60M2
21
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