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1 © 2015 ANSYS, Inc. October 14, 2016 ANSYS Confidential
The Analysis of Qi Wireless Power Transfer System for Power Class 0 Specification
삼성전기
하근수, Ph.D./수석연구원
2 © 2015 ANSYS, Inc. October 14, 2016 ANSYS Confidential
Contents
• Introduction to Wireless Power Transfer System
• Electromagnetic Analysis − Magnetostatic Analysis
− Combined Magnetostatic & AC Analysis
• Integrated System Analysis− Verification
− Resonance Circuit
− Total Circuit
3 © 2015 ANSYS, Inc. October 14, 2016 ANSYS Confidential
Introduction to Wireless Power Transfer System
• 무선충전의정의− 전원공급선을제거,무선으로전력을전송
• 무선충전시스템방식− 자기유도 (Magnetic Inductive Coupling)
• 근거리 (~5mm) / Single Device 충전
− 자기공진 (Magnetic Resonance Coupling)
• 원거리 (~50mm) / Multi Device 충전
• 주요제어기술− 충전폐루프제어 (Closed Loop Control)
− 이물질감지 (Foreign Object Detection)
− 충전상태제어 (State Control)
4 © 2015 ANSYS, Inc. October 14, 2016 ANSYS Confidential
Introduction to Wireless Power Transfer System
• Power Class 0− WPC designation for flat-surface devices, such as chargers, mobile phones, tablets, cameras,
and battery packs, in the Baseline Power Profile (≤5W) and Extended Power Profile (≤15W)
• Baseline Power Profile− The minimum set of features applying to Power Transmitters and Power Receivers that can
transfer no more than around 5W of Power
• Extended Power Profile− The minimum set of features applying to Power Transmitters and Power Receivers that can
transfer power above 5W
※ Ref.: The Qi Wireless Power Transfer System Power Class o Specification Version 1.2.1 October 2015
5 © 2015 ANSYS, Inc. October 14, 2016 ANSYS Confidential
Target _ Specifications
• Transmitter
− Lp = 24±10%[uH] , Cp = 100 ±10%[nF]
− Vin = 12±5%[V] , fop = 110 … 205 [kHz]
• Receiver
− Ls = 15.3±1[uH] , C = 20[uF]
− Cs = 127 ±1%[nF] , Cd = 1.6±5%[nF]
※ Ref.: Section 3.2.30 [Low Power_V1.2, part1] ※ Ref.: Section A.1 [Low Power_V1.2, part1]
A30 Coil Example Rx1 Coil
6 © 2015 ANSYS, Inc. October 14, 2016 ANSYS Confidential
Electromagnetic Analysis _ Magnetostatic Analysis
• Results− Self Inductance : 25.738[uH]
규격에서정의한 Lp의범위(24±10% [uH]) 안에만족함.
− Magnetic Flux Density(左) / Field Strength(右)
• Transmitter Coil Model (A30 Coil)
− Bulk Model, not Detailed Coil as Litz Wire
7 © 2015 ANSYS, Inc. October 14, 2016 ANSYS Confidential
Electromagnetic Analysis _ Magnetostatic Analysis
• Results− Self Inductance : 15.994[uH]
규격에서정의한 Ls의범위(15.3±1 [uH]) 안에만족함.
− Magnetic Flux Density(左) / Field Strength(右)
• Receiver Coil Model (Example Rx1 Coil)
− Bulk Model, not Detailed Coil as Litz Wire
8 © 2015 ANSYS, Inc. October 14, 2016 ANSYS Confidential
Electromagnetic Analysis _ Combined Magnetostatic & AC Analysis
• Results
− Coupling Coefficient(左) / Inductance(右)
Gap의증가에따라감소함을확인.
− Magnetic Flux Density(左) & Field Strength(右)
• Magentostatic_Parametric Sweep
− Coil-to-Coil Gap0 (default): 5[mm]
− Gap: 2.5 … 10[mm], 1.5[mm] step
Distance = Gap0 + Gap
7.5[mm]15[mm] 7.5[mm]15[mm]
9 © 2015 ANSYS, Inc. October 14, 2016 ANSYS Confidential
Electromagnetic Analysis _ Combined Magnetostatic & AC Analysis
• Results− Coupling Coefficient
− Inductance (左) / Resistance (右)
거의일정 주파수↑ ∝ Resistance ↑
• Eddy Current
− AC 주파수가변: 110 … 205[kHz], 5[kHz] Step
− Shield Plate 포함 (for Safety)− Skin Effect 영향, 도체표면만Magnetic Field 형성
(Perfect conductor 재질, Impedance Boundary Setup)
거의일정
10 © 2015 ANSYS, Inc. October 14, 2016 ANSYS Confidential
Appendix. Skin Depth
• 고주파 AC 인가에따른전자계필드해석의경우: − 일반적으로 Skin effect 영향으로도체표면에서만Magnetic Field가형성
− 이로인한 Skin depth는매우작아해석의어려움이존재
(즉, 매우조밀한Mesh 형성→ Mesh 수급증→ 계산시간급증)
− 다음의조건이만족할경우, 도체의내부에서의계산은하지않고,
도체의경계면만계산할수있다. (예: Impedance Boundary Setup)
※조건: Rule of Thumb (ANSYS recommendation)
도체의 Skin depth(δ)가도체두께의 1/10이하일경우, Impedance Boundary는효과적이다.
11 © 2015 ANSYS, Inc. October 14, 2016 ANSYS Confidential
Integrated System Analysis _ Verification
• Results (Comparisons)− Inductance
− Resistance
• Import Maxwell Model to Simplorer − Add Maxwell Dynamic Eddy Current Model
− Imported Model 검증회로구성
0 0
R1
1GOhm
R2
1GOhm
I1
1A
+
V
VM1
A
AM1
Current1:src Current2:src
Current1:snk Current2:snk
Resistance = Re(VM1.V) , Inductance = Im(VM1.V)/(2*pi*F) 해석결과매우유사→ Circuit Analysis 가능
12 © 2015 ANSYS, Inc. October 14, 2016 ANSYS Confidential
Integrated System Analysis _ Resonance Circuit
• Results − Frequency vs. Voltage Gain
− Frequency vs. Efficiency
• Resonance Characteristics − AC Sweep: 50 … 250 [kHz], 5[kHz] step
공진주파수: 95[kHz] @ Coil-to-Coil 거리=7.5[mm]0 0
E1
12V
W
+
WM1
Rp_dc
75.92mOhm
Cp
100nF
Rs_dc
218mOhm
Cs
127nF
Cd
1.6nF
RL
10ohm
W
+
WM2
Current1:src Current2:src
Current1:snk Current2:snk
Vin = 12[V]DC Resistance = 75.92[mΩ]Cp = 100[nF]
RL = 10[Ω]DC Resistance = 218[mΩ]Cs = 127[nF] , Cd = 1.6[nF]
91% ↑ @ 동작주파수 , 93% @ 140[kHz]
13 © 2015 ANSYS, Inc. October 14, 2016 ANSYS Confidential
Integrated System Analysis _ Total Circuit
• Inverter-Resonance-Rectifier Characteristics− PWM Freq. Sweep: 110…205[kHz], 5[kHz] step
0 0
E1
12V
W
+
WM1
Rp_dc
75.92mOhm
Cp
100nF
Rs_dc
218mOhm
Cs
127nF
Cd
1.6nF
RL
10ohm
W
+
WM2
MOS1
G1
MOS2
G2
MOS3
G3
MOS4
G4
W
+
WM3
W
+
WM4
D1 D2
D3 D4
Cin
20uF
Cout
20uF
D5 D6
D7 D8
SET: G1:=LOSET: G3:=HI
SET: G1:=HISET: G3:=LO
TRANS1
TRIANG1.VAL < DUTY_L
TRANS2
TRIANG1.VAL>=DUTY_L
TRIANG1
PHASE=0deg
AMPL=HI/2
FREQ=PWM_Frq
OFF=HI/2
ICA:
FML_INIT1
DUTY_L:=0.5DUTY_R:=0.5HI:=1LO:=0PWM_Frq:=PWM_FPhaseShift:=0
TRANS3
TRIANG2.VAL>=DUTY_R
TRANS4
TRIANG2.VAL < DUTY_R
SET: G2:=LOSET: G4:=HI
SET: G2:=HISET: G4:=LO
TRIANG2
OFF=HI/2PHASE=PhaseShiftAMPL=HI/2FREQ=PWM_Frq
PWR
Probe
PWR_Probe1
PWR
Probe
PWR_Probe2
14 © 2015 ANSYS, Inc. October 14, 2016 ANSYS Confidential
Integrated System Analysis _ Total Circuit
• Full Bridge Inverter-Resonance-Rectifier Characteristics
0
E1
12V
W
+
WM1
Rp_dc
75.92mOhm
Cp
100nF
MOS1
G1
MOS2
G2
MOS3
G3
MOS4
G4
W
+
WM3
Cin
20uF
D5 D6
D7 D8
TRANS1
TRIANG1.VAL < DUTY_L
TRANS4
TRIANG2.VAL < DUTY_R
15 © 2015 ANSYS, Inc. October 14, 2016 ANSYS Confidential
Integrated System Analysis _ Total Circuit
• Full Bridge Inverter-Resonance-Full Bridge Rectifier Characteristics
0
Rs_dc
218mOhm
Cs
127nF
Cd
1.6nF
RL
10ohm
W
+
WM2
W
+
WM4
D1 D2
D3 D4
Cout
20uF
16 © 2015 ANSYS, Inc. October 14, 2016 ANSYS Confidential
Integrated System Analysis _ Total Circuit
• PWM Characteristics
Phase Shift Available
0
SET: G1:=LO
SET: G3:=HI
SET: G1:=HI
SET: G3:=LO
TRANS1
TRIANG1.VAL < DUTY_L
TRANS2
TRIANG1.VAL>=DUTY_L
TRIANG1
PHASE=0deg
AMPL=HI/2
FREQ=PWM_Frq
OFF=HI/2
ICA:
FML_INIT1
DUTY_L:=0.5DUTY_R:=0.5
HI:=1LO:=0
PWM_Frq:=PWM_FPhaseShift:=0
TRANS3
TRIANG2.VAL>=DUTY_R
TRANS4
TRIANG2.VAL < DUTY_R
SET: G2:=LO
SET: G4:=HI
SET: G2:=HI
SET: G4:=LO
TRIANG2
OFF=HI/2
PHASE=PhaseShiftAMPL=HI/2
FREQ=PWM_Frq
PWR
Probe
PWR_Probe1
PWR
Probe
PWR_Probe20
E1
12V
W
+
WM1
Rp_dc
75.92mOhm
Cp
100nF
MOS1
G1
MOS2
G2
MOS3
G3
MOS4
G4
W
+
WM3
Cin
20uF
D5 D6
D7 D8
TRANS1
TRIANG1.VAL < DUTY_L
TRANS4
TRIANG2.VAL < DUTY_R
17 © 2015 ANSYS, Inc. October 14, 2016 ANSYS Confidential
Appendix. PWM Results
• Phase Shift(φ)=0 • Phase Shift(φ)=90˚φ
18 © 2015 ANSYS, Inc. October 14, 2016 ANSYS Confidential
Integrated System Analysis _ Total Circuit
• Results− Frequency vs.. Voltage Gain(Load/DC Input)
PWM 동작주파수↑ ∝ Voltage Gain ↓
19 © 2015 ANSYS, Inc. October 14, 2016 ANSYS Confidential
Integrated System Analysis _ Total Circuit
• Results− Frequency vs.. Load Voltage
PWM 동작주파수↑ ∝ Load Voltage ↓
20 © 2015 ANSYS, Inc. October 14, 2016 ANSYS Confidential
Integrated System Analysis _ Total Circuit
• Results− Frequency vs.. Efficiency
PWM 동작주파수↑ ∝ Efficiency ↓ , (η = 67 ~ 36%)
21 © 2015 ANSYS, Inc. October 14, 2016 ANSYS Confidential
감사합니다.
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