The phenomena of photoluminescence blinking in InGaN...

「 InGaN 発光の点滅現象の特性」

"The phenomena of photoluminescence blinking in InGaN materials"

物理博士　ミケレット・ルジェロ

准教授、横浜市立大学　大学院ナノシステム科学専攻

InGaN の点滅現象

λ ＝３６５ nmλ ＝４０５ nm

2 2.5 3

400500600700In

ten s

ity

( a.u

.)

Photon Energy (eV)

：420nm

：460nm：510nm：540nm

Ex 365nm

After few seconds the PL image change structure

2 2.5 3

400500600700

No

rma

lize

d I

nte

nsi

ty (

arb

. u

nits

)

Photon Energy (eV)

発光中心波長狙い：420nm：460nm：510nm：540nm

Ex：365nm

GaN (undoped) 5nmInxGa1-xN 3nm

GaN (undoped) 4μm

Sapphire

Ex: 365nm

Ex: 405nm

Indium Concentration

λext

460nm 510nm 540nm

0 10 20 30 40

0.4

0.6

0.8

1

540nm510nm

460nm

420nmon sapphireEx:365nm

Time (sec)Norm

aliz

ed

Inte

ns i

ty (

arb.

units )

Y0-A1exp(-t/τ1)-A2exp(-t/τ2)

Fitting Model

0 10 20 30 40

Inte

nsity

(arb

.un i

ts)

Time (sec)

400 450 500 5500

5

10

15

Center wavelength of samples

λ(nm)

●： τ １ ○：τ ２

λ ＝３６５ nm

Time characteristics:

Sample 1

Sample 2 Sample 3Sample 4

0 10 20 30 40

0.4

0.6

0.8

1

540nm510nm

460nm

420nmon sapphireEx:365nm

Time (sec)

Yellow Band

There is a steep rise at the beginning　

The yellow band peak appears to be steady and unchanged

The first rise shape and timing can be an artifact related to the shutter mechanism.

PL Spectrum

1.5 2 2.5 3 3.5

400500600

700800

photon energy (eV)

wavelength (nm)

Inte

nsi

ty (

arb.

units)

(a) (b)

Yellow band

(a)

0 10 20 30 40

Time (sec)

Inte

nsity

( arb

.units)

Main Peak

(b)

0 10 20 30 40

Time (sec)

Inte

nsi

ty (

arb.

units)

λ ＝３６５ nm

Z

E

Z

E

Model concepts

どうして PL 像は変わりますか？ - Distortion of the band can induce observable PL intensity variations

Z

どうして PL 像は変わりますか？

E

Z

Z

E

λ ＝３６５ nmGaN

GaN

InGaN

E

- Distortion of band due to trapped carriers

- Band overlap is induced, F^2 increase and PL increase

- We are observing the time constant of this deformation process

Blinking mechanism for InGaN QW.

Strain incoherently grown InGaN QWs between GaN barriers causes a strong piezoelectric field of the order of 1 MV/cm to 3 MV/cm.

As a consequence the transition is red–shifted (quantum confined Stark effect, QCSE) and the transition 　matrix element is reduced.

Exposition “History” was found to be important

Design of ad hoc experiment

A routine of illumination and darkening Intervals

Y0-A1exp(-t/τ1)-A2exp(-t/τ2)

Fitting Model

Systematic analysis of single pixel time profile

Video data(3D file)

Single frames

x

yt(sec)

①Image is decomposed in 6 variables: time, x, y, R, G, B

x

yt t

Inte

nsity

② A single point (x,y) on sample is isolate and its time profile recorded

-190 degree

New dots appears at Low temperatures

まとめ

- We detected intermittency in PL fluorescence in GaN/InGaN sample- We found dependence with Indium concentration, Excitation wavelength, excitation power, temperature- Blinking is not a random process, it is not pure chaos.- We found several domains that show autocorrelation. - There is correlation between distant blinking domain.- Correlation depends on time lag, suggesting space drift

- We found new spatial structures in the crystal that manifest themselves only in the blinking phenomenon.