Thickening Rate of SiO 2 半導體專題實驗期末報告 第十組 電機四 B93901007 許恭銓...

Thickening Rate of SiO2半導體專題實驗期末報告第十組電機四 B93901007 許恭銓電機四 B93901148 王彥翔

The diamond structure of Si

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Planes that are concerned

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Actual Photographs

100 110 111

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Molecular arrangements

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Molecular density

(100):

(110):

(111):

Thus here the molecular density is (110) > (100) > (111)

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22

783.6543.0

11441nm

atoms

2592.9

768.0543.0

21221441nm

atoms

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782.6768.021

321361nm

atoms

Si crystal orientation

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Si crystal orientation (cont.)

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Distance between layers (100): (110): (111): Hence the distance between two layers:

(110) > (111) > (100) Thus if the oxidation rate on each plane,

concerning the molecular density, is not the dominant factor, the rate of thickening the oxide should be fastest for plane (110).

aa 3536.042 aa 2500.04

aaa 2887.0212343

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Paper research

“Journal of The Electrochemical Society” Silicon Orientation Effects in the Initial

Regime of Wet Oxidation http://scitation.aip.org/getabs/servlet/

GetabsServlet?prog=normal&id=JESOAN000149000008000F98000001&idtype=cvips&gifs=yes

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Paper research Silicon Orientation Effects in the Initial

Regime of Wet Oxidation J. Electrochem. Soc., Volume 149, Issue 8, pp.

F98-F101 (August 2002) Julie L. Ngau,a Peter B. Griffin,b and James D.

Plummerb

aDepartment of Materials Science and Engineering and

bDepartment of Electrical Engineering, Stanford University, Stanford, California 94305

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Paper research

Atmospheric pressure, wet oxidation, ~785 degrees Celsius

Initially, (110) > (111) > (100). Eventually, (111) > (110) > (100).

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Paper research

The upper figure depicts the overall information in the experiment.

The lower figure shows the result of the first 150 minutes in the experiment.

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