杜武青 Charles W. Tu 工作單位: 加州大學聖地牙哥分校 Jacobs 工程

杜武青 Charles W Tu

工作單位加州大學聖地牙哥分校 Jacobs 工程學院

Jacobs School of Engineering University of California San Diego La Jolla CA 92093-0403 USA 電話 +1-858-822-0220 傳真 +1-858-822-3904 E-mail ctuucsdedu

學歷 1973-1978 PhD耶魯大學(Yale University)工程應用科學系

1971-1973 MPhil耶魯大學物理系

1968-1971 BSc (Honors) 麥其爾大學(McGill University) 物理系

經歷 2007-迄今卓越教授美國加州大學聖地牙哥分校(UCSD)電機電腦工程系

2004-迄今工學院副院長 UCSD Jacobs 工學院

2005-迄今副主任 Global TIES (工程服務學生隊) 2005-迄今主任 COSMOS (加州中學生數理夏令營) 1999-2003 系主任 UCSD 電機電腦系 (Department of Electrical and Computer Engineering) 1996-1999 副系主任

1991-2007 教授 1988-1991 副教授 1980-1988 研究員 ATampT 貝爾實驗室美國紐澤西州梅山鎮 (Murray Hill New Jersey) 1978-1980 講師耶魯大學(Yale University)物理系

學術榮譽獎項

2011 分子束磊晶創新獎 (MBE Innovator Award) 北美分子束磊晶學會 2009 潘文淵研究傑出獎台灣潘文淵文教基金會 2009 韓國 WCU (World Class University 世界級大學)教授光州科學技術院

奈米生物材料電子系 (Department of Nanobio Materials and Electronics Gwangju Institute of Science and Technology)

2007 卓越教授美國加州大學聖地牙哥分校(UCSD) 2006 工程教育家獎 (Engineering Educator of the Year) 聖地牙哥縣工程師理事會

(San Diego County Engineering Council) 2005 亞裔文物理工研究獎 (Asian Heritage Award) 亞洲通報 (Asia Journal) 2004 美國 AVS 科技學會會士 (AVS Fellow) 2002 美國物理學會會士 (APS Fellow) 2002 IEEE 電機及電子學工程師學會會士 (IEEE Fellow) 1997 第 613 多被參考文獻 (500000 作者內) 科學文獻研究所 (Institute of Scientific

Informations) 1997 日本科學振興學會獎學金 1995-2009 韓國光州科學技術院材料工程系客座教授 1993-1995 聯合國開發部獎學金mdash中國考察 1987 卓越研究員獎 1985 1986 1987 貢獻優異獎ATampT 貝爾實驗室 1971 Watson 物理金牌麥其爾大學(McGill University)


研究領域 III-V 族半導體化合物異質體氣態源分子束磊金電子元件光電元件學術學會電機及電子學工程師學會(IEEE)會士美國物理學會會士美國 AVS 科技學會會士文獻 gt385 篇學報論文 gt8500 引用 (201191) gt110 科學會議論文 5 本書的章文 9 本科學會議論文的主編 4 項專利專業事項 2006-迄今國立中山大學南台灣光電卓越研究中心計畫諮詢委員

2003-迄今電機及電子學工程師學會(IEEE)聖地牙哥分會學生活動連絡人

諮詢委員會會員

北美分子束磊晶會議 1990-迄今會長 2001-迄今

美國真空會議電子材料及制造組 1980-91 2004-06 電子材料會議 1991-1997 2000-06 2008-迄今

會議主席

北美分子束磊晶會議 2011 國際分子束磊晶會議 2008 美國材料研究學會會議 1989 1992 1994 國際化學束磊晶會議 1993 1995 會議組織委員會會員國際分子束磊晶會議 1990 會議節目委員會會員國際分子束磊晶會議 1992 1996 1998 2000 國際磷化銦會議 1994 1997-2002 國際化合物半導體會議 2994 1997 2000-01 2004-05 國際化學束磊晶會議 1997 1999

Charles W Tu 杜武青

Address Jacobs School of Engineering University of California San Diego

La Jolla California 92093-0403 USA Phone 1-858-822-0220 Fax 1-858-822-3904 E-mail ctuucsdedu

Education 1978 PhD Engineering and Applied Science Yale University New Haven 1972 MPhil Physics Yale University New Haven 1971 BSc (Honors) McGill University Montreal Professional Appointments 2007-present Distinguished Professor Dept Electrical amp Computer Engineering

University of California San Diego (UCSD) 122004-present Associate Dean Jacobs School of Engineering UCSD

2005-present Co-executive Director Global TIES (Teams in Engineering Service) 2005-present Director COSMOS (California Summer School on Math and Science)

1999-2003 Chair Dept Electrical amp Computer Engineering 1996-1999 Vice Chair Academic Personnel

1991-2007 Professor 1988-1991 Associate Professor 1980-1988 Member of Technical Staff ATampT Bell Labs Murray Hill NJ 1978-1980 Lecturer Physics Department Yale University Honors 2011 MBE Innovator Award North American Molecular Beam Conference

2009 Pan Wen-Yuan Foundation Outstanding Research Award Taiwan 2007 Distinguished Professor University of California San Diego 2006 Engineering Educator of the Year San Diego County Engineering

Council 2005 Asian Heritage Award on Science Technology amp Research Asia Journal 2004 Fellow of the AVS Science and Technology Society

2002 Fellow of the American Physical Society 2002 Fellow of the Institute of Electrical and Electronics Engineers (IEEE) 1997 ranked no 613 Most Cited Physicist 1981-1997 by ISI (among 500000

authors) 1997 Japan Society for Promotion of Sciences (JSPS) Fellowship 1995-2009 Adjunct Professor Dept Materials Science amp Engineering

Gwangju Institute of Science and Technology Gwangju Korea 1993-1995 NSF-Japan Center for Global Partnership Fellowship 1991 United Nations Development Program Award for a lecture tour in China 1987 Distinguished Member of Technical Staff ATampT Bell Labs 1985 1986 1987 Exceptional Contribution Award ATampT Bell Labs 1971 Watson Gold Medal in Physics McGill University Research Area III-V compound semiconductor heterostructures gas-source molecular beam

epitaxy (MBE) in situ etching and patterned growth by metal-organic MBE electronicoptoelectronic devices

Professional Societies Fellow IEEE Fellow American Physical Society Fellow AVS Science and

Technology Society


Publications gt385 refereed journal papers gt8500 citations (as of September 1 2011) gt110 refereed conference proceeding papers 9 unrefereed published articles 5 book chapters 9 edited conference or symposium proceedings 4 patents Professional Activities 2006-present Advisory Board member National Sun Yet-Sen University

Opto-Electronic Center of Excellence 2003-present Student Activities Coordinator IEEE San Diego Section Advisory board committee member

North American Molecular Beam Epitaxy Conference 1990-present Chair 2001-present

American Vacuum Society Electronic Materials amp Processing Div 1989- 91 2004-06

Electronic Materials Conference 1991-97 (also Treasurer 1995-97) 2000-06

International Conference on Modulated Semiconductor Structures 1997 Conference ChairCo-Chair North American Molecular Beam Epitaxy Conference 2011 International Conf Molecular Beam Epitaxy 2008

Materials Research Society Symposium 1989 1992 1994 International Conf Chemical Beam Epitaxy amp Related Growth Tech

1993 1995 Conference Organizing Committee member International Conference on Molecular Beam Epitaxy 1990 Conference Program Committee member International Conference on Molecular Beam Epitaxy 1992 1996 1998 2000 International Conference on InP and Related Materials 1994 1997-2002 International Symposium on Compound Semiconductors 1994 1997

2000-01 2004-05 International Conf Chemical Beam Epitaxy amp Rel Growth Techniques

1997 1999

Charles W Tu 杜武青 Department of Electrical and Computer Engineering

Jacobs School of Engineering University of California San Diego

I Refereed Journal Articles helliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphellip 1 II Books and Book Chapters helliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphellip 24 III Conference Proceedings helliphelliphellip helliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphellip 25 IV Patents helliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphellip 33

I Refereed Journal Articles (1-388)

1 CW Tu and AR Schlier Electron stimulated interaction of water vapor with InP Journal of Vacuum Science amp Technology Vol 20 (March 1982) pp 739-740

2 GD Fletcher MJ Alguard TJ Gay VW Hughes CW Tu PF Wainwright MS Lubell W Raith and FC Tang Measurement of spin-exchange effects in electron-hydrogen collisions 90deg elastic scattering from 4 to 30 eV Physical Review Vol 48 (June 1982) pp 1671-1674

3 CW Tu RPH Chang and AR Schlier Surface etching kinetics of hydrogen plasma on InP Applied Physics Letters Vol 41 No 1 (July 1982) pp 80-82

4 CW Tu and AR Schlier Surface studies of InP by electron energy loss spectroscopy and Auger electron spectroscopy Applied Surface Science Vol 11-12 (July 1982) pp 355-361

5 VM Donnely DL Flamm CW Tu and DE Ibbotson Temperature dependence of InP and GaAs etching in a chlorine plasma Journal of the Electrochemical Society Vol 129 No 11 (November 1982) pp 2533-2537

6 CW Tu SR Forrest and WD Johnston Jr Epitaxial InPfluorideInP (001) double heterostructures grown by molecular beam epitaxy Applied Physics Letters Vol 43 No 6 (September 1983) pp 569-571

7 CW Tu TT Sheng MH Read AR Schlier JG Johnson Jr and WA Bonner Growth of single-crystalline epitaxial group II fluoride films on InP (001) by molecular-beam epitaxy Journal of the Electrochemical Society Vol 130 (October 1983) pp 2081-2087

8 CW Tu TT Sheng AT Macrander JM Phillips and HJ Guggenheim Lattice-matched single-crystalline dielectric films (BaxSr1-x F2) on InP(001) grown by molecular-beam epitaxy Journal of Vacuum Science Technology B Vol 2 No 1 (January 1984) pp 24-26

9 RH Hendel SS Pei SA Kiehl CW Tu M D Feuer and R Dingle A 10-GHz frequency divider using selectively doped heterostructure transistors IEEE Electron Device Letters Vol 5 No 10 (October 1984) pp 406-408

10 MS Skolnick TD Harris CW Tu TM Brennan and MD Sturge Strongly polarized bound exciton luminescence from GaAs grown by molecular beam epitaxy Applied Physics Letters Vol 46 No 4 (February 1985) pp 427-429

11 NJ Shah SS Pei CW Tu RH Hendel and RC Tiberio 11 ps ring oscillators with submicrometer selectively doped heterostructure transistors Electronics Letters Vol 21 No 4 (February 1985) pp 151-157

12 CY Chen NA Olsson CW Tu and PA Garbinski Monolithic integrated receiver front end consisting of a photoconductive detector and a GaAs selectively doped heterostructure transistor Applied Physics Letters Vol 46 No 7 (April 1985) pp 681-683

13 J Chevallier WC Dautremont-Smith CW Tu and SJ Pearton Donor Neutralization in GaAs (Si) by atomic hydrogen Applied Physics Letters Vol 47 No 2 (July 1985) pp 108-110


2

14 JP Eisenstein HL Stormer V Narayanamurti AY Cho AC Gossard and CW Tu Density of states and De haas-van Alphen effect in two-dimensional electron systems Physical Review Letters Vol 55 No 8 (August 1985) pp 875-878

15 L Schultheis and CW Tu Influence of a surface electric-field on the line shape of the excitonic emission in GaAs Physical Review B Vol 32 No 10 (November 1985) pp 6978-6981

16 SJ Allen F De Rosa R Bhat G Dolan and CW Tu Standing charge density waves driven by electron drift in patterned (AlGa)AsGaAs heterostructures Physica B amp C Vol 134 No 1-3 (November 1985) pp 332-336

17 HJ Polland L Schultheis J Kuhl EO Goumlbel and CW Tu ldquoLifetime enhancement of two-dimensional excitons by the quantum-confined stark effectrdquo Physical Review Letters Vol 55 No 23 (December 1985) pp 2610-2613

18 P Dawson BA Wilson CW Tu and RC Miller Staggered band alignments in AlGaAs heterojunctions and the determination of valence-band offsets Applied Physics Letters Vol 48 No 8 (February 1986) pp 541-543

19 CW Tu SJ Wang JM Phillips JM Gibson RA Stall and RJ Wunder Structural and electrical properties of lattice-matched Ca044Sr056F2GaAs structures grown by molecular-beam epitaxy Journal of Vacuum Science amp Technology B Vol 4 No 2 (March-April 1986) pp 637-640

20 SJ Pearton WC Dautremont-Smith J Chevalliers CW Tu and KD Cummings Hydrogenation of shallow donor levels in GaAs Journal of Applied Physics Vol 59 No 8 (April 1986) pp 2821-2827

21 GS Boebinger AM Chang HL Stormer DC Tsui JCM Hwang AY Cho CW Tu and G Weimann Activation energies of fundamental and higher order states in the fractional quantum Hall effect Surface Science Technology Vol 170 No 1-2 (April 1986) pp 129-135

22 NJ Shah SS Pei CW Tu and RC Tiberio Gate length dependence of the speed of SSI circuits using submicron selectively doped heterostructure transistor technology IEEE Transactions on Electron Devices Vol 33 No 5 (May 1986) pp 543-547

23 MS Skolnick CW Tu and TD Harris High-Resolution spectroscopy of defect-bound excitons and acceptors in GaAs grown by molecular-beam epitaxy Physical Review B Vol 33 No 12 (June 1986) pp 8468-8474

24 JH Abeles CW Tu SA Schwarz and TM Brennan Nonlinear high frequency response of GaAs metal-semiconductor field effect transistors Applied Physics Letters Vol 48 No 23 (June 1986) pp 1620-1622

25 L Schultheis A Honold J Kuhl K Kohler and CW Tu Phase coherence and line broadening of free-excitons in GaAs quantum-wells Superlattices and Microstructures Vol 2 No 5 (July 1986) p 441-443

26 BA Wilson CW Tu RC Miller and P Dawson Optical evidence of staggered band alignments in (AlGa)AsAlAs multi-quantum-well structures Journal of Vacuum Science amp Technology B Vol 4 No 4 (July-August 1986) pp 1037-1040

27 E Batke and CW Tu Effective mass of a space-charge layer on GaAs in a parallel magnetic field Physical Review B Vol 34 No 4 (August 1986) pp 3027-3029

28 HJ Polland L Schultheis J Kuhl EO Gobel and CW Tu Influence of electric-fields on the carrier lifetime in quantum wells Journal of the Optical Society of America B-Optical Physics Vol 3 No 8 (August 1986) pp P40-P41

29 JH Plland K Kohler L Schultheis J Kuhl and CW Tu ldquoField-induced lifetime enhancement and ionization of excitons in GaAsAlGaAs quantum wells Superlattices and Microstructures Vol 2 No 4 (August 1986) pp 309-312

30 LT Florez and CW Tu Picosecond Phase Coherence and Orientational Relaxation of Excitons in GaAs Physical Review Letters Vol 57 No 14 (September 1986) pp 1797-1800


3

31 L Schultheis J Kuhl A Honold and CW Tu Ultrafast phase relaxation of excitons via exciton-exciton and exciton-electron collisions Physical Review Letters Vol 57 No 13 (September 1986) pp 1635-1638

32 CW Tu WL Jones RF Kopf LD Urbanek and SS Pei Properties of selectively doped heterostructure transistors incorporating a superlattice donor layer IEEE Electron Device Letters Vol7 No 9 (September 1986) pp 552-554

33 W C Dautremont-Smith J C Nabity V Swaminathan Michael Stavola J Chevallier C W Tu and S J Pearton ldquoPassivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposure Applied Physics Letters Vol 49 No 17 (October 1986) pp 1098-1100

34 CW Tu SA Ajuria and H Temkin Broad-band high-reflectivity mirror using (AlGa)As(CaSr)F2 multilayer structures grown by molecular beam epitaxy Applied Physics Letters Vol 49 No 15 (October 1986) pp 920-922

35 E Batke D Heitmann and CW Tu Plasmon and magnetoplasmon excitation in two-dimensional electron space-charge layers on GaAs Physical Review B Vol 34 No 10 (November 1986) pp 6951-6960

36 RC Miller CW Tu SK Sputz and F Kopf Photoluminescence studies of the effects of interruption during the growth of single GaAsAl03Ga07As quantum wells Applied Physics Letters Vol 49 No 19 (November 1986) pp 1245-1247

37 R C Miller DA Kleinman CW Tu and SK Sputz Doubly resonant LO-phonon Raman scattering via the deformation potential with a single quantum well Physical Review B Vol 34 No 10 (November 1986) p 7444-7446

38 L Schultheis A Honold J Kuhl K Kohler and CW Tu Optical dephasing of homogeneously broadened 2D exciton transitions in GaAs quantum wells Physical Review Vol B 34 No 12 (December 1986) pp 9027-9030

39 JJ Song YS Yoon A Fedotowsky YB Kim JN Schulman CW Tu D Huang and H Morkoc Barrier-width-dependence of optical transitions involving unconfined energy states in GaAsAlxGa1-xAs superlattices Physical Review B Vol 34 No 12 (December 1986) pp 8958-8962

40 CW Tu SA Ajuria and H Temkin ldquoMolecular-beam epitaxial growth of (AlGa)As(CaSr)F2 multilayer structures as a broad-band high-reflectivity mirrorrdquo Journal of Crystal Growth Vol 81 (1987) pp 545-546

41 CW Tu RC Miller BA Wilson PM Petroff TD Harris RF Kopf SK Sputz and MG Lamont Properties of (Al Ga)AsGaAs heterostructures grown by molecular beam epitaxy with growth interruption Journal of Crystal Growth Vol81 No 4 (February 1987) pp 159-163

42 JC Nabity M Stavola J Lopata WC Dautremont-Smith CW Tu and SJ Pearton Passivation of Si donors and DX centers in AlGaAs by hydrogen plasma exposure Applied Physics Letters Vol50 No 14 (April 1987) pp 921-923

43 YS Yoon PS Jung YB Kim A Fedotowsky JJ Song JN Schulman CW Tu JM Brown D Huang and H Morkoc Above barrier PLE doublets in GaAs(AlGa)As superlattices Applied Physics Letters Vol50 No 18 (May 1987) pp 1269-1271

44 CH Yang SA Lyon and CW Tu Photoluminescence from two dimensional electrons at single heterojunctions Superlattices and Microstructures Vol 3 No 3 (May 1987) pp 269-271

45 E Batke and CW Tu ldquoMagnetic excitons in space charge layers in GaAsrdquo Physical Review Letters Vol58 No 23 (June 1987) pp 2474-2477

46 PM Petroff J Cibert AC Gossard GJ Dolan and CW Tu Interface structure and optical properties of quantum wells and quantum boxes Journal of Vacuum Science amp Technology B Vol 5 No 4 (July-August 1987) pp 1204-1208

47 Ezis DW Langer and CW Tu The dependence of AlGaAsGaAs MODFET isolation on material and device structure Solid-State Electronics Vol 30 No 8 (August 1987) pp 807-811


4

48 B Deveaud TC Damen J Shah and CW Tu Dynamics of exciton transfer between monolayer-flat islands in single quantum wells Applied Physics Letters Vol51 No 11 (September 1987) pp 828-830

49 SJ Pearton WC Dautremont-Smith J Lopata CW Tu and CR Abernathy Dopant type effects on the diffusion of deuterium in GaAs Physical Review B Vol 36 No 8 (September 1987) pp 4260-4264

50 L Schultheis K Kohler and CW Tu Energy shift and line broadening of three-dimensional excitons in electric fields Physical Review B Vol 36 No 12 (October 1987) pp 6609-6612

51 HJ Polland WW Ruhle K Ploog and CW Tu Frohlich interaction in 2D-GaAsAlxGa1-xAs systems Physical Review B Vol 36 No 14 (November 1987) pp 7722-7725

52 DF Nelson and SK Sputz RC Miller and CW Tu Exciton binding energies from an envelope function analysis of data on narrow quantum wells of integral monolayer widths in AlGaAsGaAs Physical Review B Vol 36 No 15 (November 1987) pp 8063-8070

53 GS Boebinger HL Stormer DC Tsui AM Chang JCM Hwang AY Cho and CW Tu Activation energies and localization in the fractional quantum Hall effect Physical Review B Vol 36 No 15 (November 1987) pp 7919-7929

54 CW Tu VM Donnelly JC Beggy FA Baiocchi VR McCrary TD Harris and MG Lamont Laser-modified molecular-beam epitaxial growth of (Al)GaAs on GaAs and (CaSr)F2GaAs substrates Applied Physics Letters Vol52 No 12 (March 1988) pp 966-968

55 VM Donnelly CW Tu JC Beggy VR McCrary MG Lamont TD Harris FA Baiocchi and RC Farrow Laser-assisted metal-organic molecular beam epitaxy of GaAs Applied Physics Letters Vol52 No 13 (March 1988) pp 1065-1067

56 BB Goldberg D Heiman A Pinczuk CW Tu AC Gossard and JH English Magneto-optics of the fractional quantum Hall effect Surface Science Vol 196 No 1-3 (March 1988) pp 209-218

57 WW Ruhle HJ Polland E Bauser K Ploog and CW Tu Heating of cold electrons by a warm GaAs lattice a novel probe to carrier-phonon interaction Solid State Electronics Vol31 No 3-4 (March-April 1988) pp 407-412

58 CW Tu RC Miller PM Petroff RF Kopf B Deveaud TC Damen and J Shah Intra-well exciton transport in monolayer-flat GaAsAlGaAs single quantum wells grown by molecular-beam epitaxy Journal of Vacuum Science amp Technology B Vol 6 No 2 (March-April 1988) pp 610-612

59 TH Chiu WT Tsang J Ditzenberg CW Tu F Ren and CS Wu Growth of device quality GaAs by chemical beam epitaxy Journal of Electronic Materials Vol 17 No 3 (May 1988) pp 217-221

60 Honold L Schultheis J Kuhl and CW Tu Reflective degenerate 4-wave mixing on GaAs single quantum wells Applied Physics Letters Vol 52 No 25 (June 1988) pp 2105-2107

61 CH Yang SA Lyon and CW Tu Photoluminescence from the two dimensional electron gas at GaAsAlGaAs single heterojunctions Applied Physics Letters Vol 53 No 4 (July 1988) pp 285-287

62 R Mostegaoui J Chevallier A Jalil JC Pesant CW Tu and RF Kopf Shallow donors and D-X centers neutralization by atomic hydrogen in GaAlAs doped with silicon Journal of Applied Physics Vol 64 No 1 (July 1988) pp 207-210

63 D Heiman BB Golberg A Pinczuk CW Tu AC Gossard and JH English Optical anomalies of the two-dimensional electron gas in the extreme magnetic quantum limit Physical Review Vol 61 No 5 (August 1988) pp 605-608

64 MS Skolnick DP Halliday and CW Tu Zeeman spectroscopy of the defect-induced bound exciton lines in GaAs grown by molecular beam epitaxy Physical Review B Vol 38 No 6 (August 1988) pp 4165-4179

65 PS Yung YS Yoon A Fedotows JJ Song JN Schulman CW Tu RF Kopf and H Morkoc Photoluminescence excitation and resonance Raman spectroscopy of confined transitions in GaAsAlxGa1-xAs superlattices Superlattice and Microstructures Vol 4 No 4-5 (August 1988) pp 581-583


5

66 K Kohler HJ Polland L Schultheis and CW Tu Photoluminescence of two-dimensional excitons in an electric field lifetime enhancement and field ionization in GaAs quantum results Physical Review B Vol 38 No 8 (September 1988) pp 5496-5503

67 YH Lee JL Jewell SJ Walker CW Tu JP Harbison and LT Florez Electro-dispersive multiple-quantum-well modulator Applied Physics Letters Vol 53 No 18 (October 1988) pp 1684-1686

68 BB Goldberg D Heiman MJ Graf DA Broido A Pinczuk CW Tu JH English and AC Gossard ldquoOptical-transmission spectroscopy of the two-dimensional electron-gas in GaAs in the quantum hall regimerdquo Physical Review B Vol 38 No 14 (November 1988) pp 10131-10134

69 V A Pinczuk JP Valladares D Heiman AC Gossard JH English CW Tu L Pfeiffer and K West Observation of roton density of states in two-dimensional Landau-level excitations Physical Review Letters Vol 61 No 23 (December 1988) pp 2701-2704

70 A Ourmazd DW Taylor J Cunningham and CW Tu Chemical mapping of GaAsAlGaAs interfaces at near-atomic resolution Physical Review Letters Vol 62 No 8 (February 1989) pp 933-936

71 CW Tu VM Donnelly JC Beggy VR McCrary and JA McCaulley Selective-area epitaxy of GaAs by molecular-beam epitaxy (MBE) and metal-organic MBE with excimer laser irradiation Journal of Crystal Growth Vol 95 No 1-4 (February 1989) pp 140-141

72 J Kuhl A Honold L Schultheis and CW Tu ldquoOptical dephasing and orientational relaxation of wannier-excitons and free-carriers in GaAs and GaAsAlxGa1-xAs quantum-wellsrdquo Festkorperprobleme-Advances In Solid State Phyics Vol 29 (March 1989) pp 157-181

73 G Danan A Pinczuk JP Valladares LN Pfeiffer KW West and CW Tu Coupling of excitons with free electrons in light scattering from GaAs quantum wells Physical Review B Vol 39 No 8 (March 1989) pp 5512-5515

74 JJ Song PS Jung YS Yoon H Chu YC Chang and CW Tu Excitons associated with subband dispersion in GaAsAlxGa1-xAs as superlattices Physical Review B Vol 39 No 8 (March 1989) pp 5562-5565

75 EF Schubert CW Tu R Kopf JM Kuo and L Lunnardi Diffusion and drift of Si-dopants in delta-doped n-type AlxGa1-xAs Applied Physics Letters Vol 54 No 25 (June 1989) pp 2592-2594

76 DY Oberli J Shah TC Damen CW Tu TY Chang DAB Miller JE Henry RE Kopf N Sauer and AE DiGiovanni Direct measurement of resonant and nonresonant tunneling times in asymmetric coupled quantum wells Physical Review B Vol 40 No 5 (August 1989) pp 3028-3031

77 A Honold L Schultheis J Kuhl and CW Tu Collision broadening of two-dimensional excitons in a GaAs single quantum well Physical Review B Vol 40 No 9 (September 1989) pp 6442-6445

78 PS Jung JM Jacob JJ Song YC Cheng and CW Tu Exciton linewidth narrowing in thin-barrier GaAsAlxGa1-xAs superlattices Physical Review B Vol 40 No 9 (September 1989) pp 6454-6457

79 F Ren DJ Resnick DK Atwood CW Tu RF Kopf and NJ Shah ldquoGaAs heterostructure FET frequency dividers fabricated with high-yield 05 mm direct-write trilevel-gate-resestrdquo Electronics Letters Vol 25 No 24 (November 1989) pp 1631-1632

80 F Ren CW Tu RF Kopf CS Wu A Chandra and SJ Pearton Partially doped GaAs single-quantum-well FET Electronics Letters Vol 25 No 24 (November 1989) pp 1675-1677

81 CW Tu BW Liang TP Chin and J Zhang Growth and characterization of GaAs grown by metalorganic molecular-beam epitaxy using trimethylgallium and arsenic Journal of Vacuum Science amp Technology B Vol 8 No 2 (March-April 1990) pp 293-296

82 BW Liang TP Chin and CW Tu Reflection-high-energy electron-diffraction study of metal-organic molecular-beam epitaxy of GaAs using tri-methylgallium and arsenic Journal of Applied Physics Vol 67 No 9 (May 1990) pp 4393-4395

83 JF Zhou PS Jung JJ Song and CW Tu Effect of subband mixing and subband dispersion on the exciton line shape of superlattices Applied Physics Letters Vol 56 No 19 (May 1990) pp 1880-1882


6

84 W Liang TP Chin and CW Tu Reflection high-energy electron-diffraction study of metalorganic molecular-beam epitaxy of GaAs using trimethylgallium and arsenic Journal of Applied Physics Vol 67 No 9 (May 1990) pp 4393-4395

85 BW Liang and CW Tu Surface kinetics of chemical beam epitaxy of GaAs Applied Physics Letters Vol 57 No 7 (August 1990) pp 689-691

86 H Hillmer A Forchel R Sauer and CW Tu Interface-roughness-controlled exciton mobilities in GaAsAl037Ga063As quantum wells Physical Review B Vol 42 No 5 (August 1990) pp 3220-3223

87 CW Tu BW Liang and TP Chin The effects of arsenic overpressure in metal-organic molecular-beam epitaxy of GaAs and InAs Journal of Crystal Growth Vol105 No 1-4 (October 1990) pp 195-198

88 K Leo J Shah JP Gordon TC Damen DAB Miller CW Tu and JE Cunningham Effect of collisions and relaxation on coherent resonant tunneling Hole tunneling in GaAsAlxGa1-xS double-quantum-well structures Physical Review B Vol 42 No 11 (October 1990) pp 7065-7068

89 BW Liang TP Chin LY Wang and CW Tu A study of metal-organic molecular-beam epitaxy growth of InAs by mass spectrometry and reflection high-energy-electron diffraction Journal of Crystal Growth Vol 105 No 1-4 (October 1990) pp 240-243

90 TP Chin BW Liang HQ Hou MC Ho CE Chang and CW Tu Determination of VIII ratios of phosphide surfaces during gas-source molecular-beam epitaxy Applied Physics Letters Vol 58 No 3 (January 1991) pp 254-256

91 J Zhang NC Tien EW Lin HH Wieder WH Ku and CW Tu Molecular beam epitaxial growth and characterization of pseudomorphic modulation-doped field-effect transistors Thin Solid Films Vol 196 No 2 (February 1991) pp 295-303

92 CE Chang TP Chin and CW Tu A differential reflection high energy electron diffraction measurement system Review of Scientific Instruments Vol 62 No 3 (March 1991) pp 655-659

93 JCP Chang TP Chin KL Kavanagh and CW Tu High-resolution x-ray diffraction of InAlAsInP superlattices grown by gas-source molecular-beam epitaxy Applied Physics Letters Vol 58 No 14 (April 1991) pp 1530-1532

94 BW Liang and CW Tu The roles of group-V species in metalorganic molecular-beam epitaxy and chemical-beam epitaxy of II-V compounds Journal of Crystal Growth Vol 111 No 1-4 (May 1991) pp 550-553

95 HQ Hou CW Tu and SNG Chu Gas-source molecular beam epitaxy growth of highly strained device quality InAsPInP multiple quantum well structures Applied Physics Letters Vol 58 No 25 (June 1991) pp 2954-2956

96 HQ Hou BW Liang TP Chin and CW Tu In situ determination of phosphorus composition in GaAs1-xPx grown by gas-source molecular beam epitaxy Applied Physics Letters Vol 59 No 3 (July 1991) pp 292-294

97 TP Chin PD Kirchner JM Woodall CW Tu Highly carbon-doped p-type Ga05In05As and Ga05In05P by carbon tetrachloride in gas-source molecular beam epitaxy Applied Physics Letters Vol 59 No 22 (November 1991) pp 2865-2867

98 MC Ho Y He TP Chin BW Liang and CW Tu Enhancement of effective Schottky barrier height on normal-type InP Electronics Letters Vol 28 No 1 (January 1992) pp 68-71

99 H Hillmer A Forchel and CW Tu ldquoEnhancement of electron-hole pair mobilities in thin GaAsAlxGa1-xAs quantum-wellsrdquo Physical Review B Vol 45 No 3 (January 1992) pp 1240-1245

100 HQ Hou and CW Tu Growth of GaAs1-xPxGaAs and InAsxP1-xInP strained quantum wells for optoelectronic devices by gas source molecular beam epitaxy Journal of Electronic Materials Vol 21 No 2 (February 1992) pp 137-141


7

101 CS Wu CP Wen RN Sato M Hu CW Tu J Zhang LD Flesner L Pham and PS Nayer Novel GaAsAlGaAs multiquantum well Schottky junction device and its photovoltaic LWIR detection IEEE Transacations on Electronic Devices Vol 39 No 2 (February 1992) pp 234-241

102 H Hillmer A Forchel CW Tu and R Sauer Enhanced exciton mobilities in GaAsAlGaAs and InGaAsInP quantum wells Semiconductor Science and Technology Vol 7 No 3B (March 1992) pp B235-B239

103 XYin Xinxin Guo FH Pollack GD Pettit JM Woodall TP Chin and CW Tu Nature of band bending at semiconductor surfaces by contactless electroreflectance Applied Physics Letters Vol 60 No 11 (March 1992) pp 1336-1338

104 HQ Hou BW Liang MC Ho TP Chin and CW Tu Growth studies of GaAs1-xPx in gas-source molecular beam epitaxy Journal of Vacuum Science amp Technology B Vol 10 No 2 (March-April 1992) pp 953-955

105 HQ Hou BW Liang MC Ho TP Chin and CW Tu Growth studies of GaAsP in gas-source molecular beam epitaxy Journal of Vacuum Science Technology B Vol 10 No 2 (March-April 1992) pp 953-955

106 HQ Hou and CW Tu In situ control of As composition in InAsP and InGaAsP grown by gas-source molecular beam epitaxy Applied Physics Letters Vol 60 No 15 (April 1992) pp 1872-1874

107 BW Liang PZ Lee DW Shih and CW Tu Electrical properties of InP grown by gas-source molecular beam epitaxy at low temperature Applied Physics Letters Vol 60 No 17 (April 1992) pp 2104-2106

108 HQ Hou and CW Tu InGaAsPInP multiple quantum-wells grown by gas-source molecular beam epitaxy Journal of Crystal Growth Vol 120 No 1-4 (May 1992) pp 167-171

109 RC Gee TP Chin CW Tu PM Asbeck CL Lin PD Kirchner and JM Woodall InPInGaAs heterojunction bipolar transistors grown by gas-source molecular beam epitaxy with carbon-doped base IEEE Electron Device Letters Vol 13 No 5 (May 1992) pp 247-249

110 DS Kim JM Jacobs JF Zhuo JJ Song HQ Hou CW Tu and H Markoc Initial generation of hot LO phonons by photoexcited hot carriers in GaAs and AlxGa1-xAs alloys studied by picosecond Raman scattering Physical Review B Vol 45 No 24 (June 1992) pp 13973-13977

111 Y He BW Liang NC Tien and CW Tu Selective Chemical Etching of InP Over InAlAs Journal of the Electrochemical Society Vol 139 No 7 (July 1992) pp 2046-2048

112 SJ Hwang W Shan JJ Song HQ Hou and CW Tu Interband transitions in InAsxP1-xInP strained multiple quantum wells Journal of Applied Physics Vol 72 No 4 (August 1992) pp 1645-1647

113 BW Liang and CW Tu A study of group-V desorption from GaAs and GaP by reflection high-energy electron diffraction in gas-source molecular beam epitaxy Journal of Applied Physics Vol 72 No 7 (October 1992) pp 2806-2809

114 HK Dong BW Liang MC Ho S Hung and CW Tu A study of Ar ion laser-assisted metalorganic molecular beam epitaxy of GaAs by reflection high-energy difraction Journal of Crystal Growth Vol 124 No 1-4 (November 1992) pp 181-185

115 PW Yu BW Liang and CW Tu Deep center photoluminescence study of low-temperature InP grown by molecular beam epitaxy Applied Physics Letters Vol 61 No 20 (November 1992) pp 2443-2445

116 HQ Hou and CW Tu Homoepitaxial growth of InP on (111) B substrates by gas-source molecular beam epitaxy Applied Physics Letters Vol 62 No 3 (January 1993) pp 281-283

117 P Dreszer WM Chen K Seendripu JA Wolk W Walukiewicz BW Liang CW Tu and ER Weber Phosphorus antisite defects in low-temperature InP Physical Review B Vol 47 No7 (February 1993) pp 4111-4114


8

118 HQ Hou and CW Tu InP and InAsPInP heterostructures grown on InP (111)B substrates by gas-source molecular beam epitaxy Journal of Crystal Growth Vol 127 No 1-4 (February 1993) pp 199-203

119 W Han S Hwang JJ Song HQ Hou and CT Tu ldquoHigh-pressure photoluminescence study of GaAsGaAs1-xPx strained multiple quantum-wellsrdquo Physical Review B Vol 47 No 7 (February 1993) pp 3765-3770

120 BW Liang and CW Tu A study of group-V element desorption from InAs InP GaAs and GaP by reflection high-energy electron diffraction Journal of Crystal Growth Vol 128 No 1-4 (March 1993) pp 538-542

121 CW Tu BW Liang and HQ Hou Growth kinetics and in situ composition determination of mixed-group-V compounds grown by gas-source molecular beam epitaxy Journal of Crystal Growth Vol 127 (April 1993) pp 251-254

122 W Shan SJ Hwang JJ Song HQ Hou and CW Tu Valence band offset of GaAsGaAs068P032 multiple quantum wells Applied Physics Letters Vol 62 No 17 (April 1993) pp 2078-2080

123 H Hillmer and CW Tu 2-dimensional electron-hole pair diffusivities in thin GaAsAlGaAs quantum wells Applied Physics A ndash Materials Science amp Processing Vol 56 No 5 (May 1993) pp 445-448

124 TP Chin JCP Chang KL Kavanagh CW Tu PD Kirchner and JM Woodall Gas-source molecular beam epitaxial growth characterization and light-emitting diode application of In(x)Ga(1-x)P on GaP (100) Applied Physics Letters Vol 62 No 19 (May 1993) pp 2369-2371

125 TPChin and CW Tu Heteroepitaxial growth of InPIn052Ga048As structures on GaAs (100) by gas-source molecular beam epitaxy Applied Physics Letters Vol 62 No 21 (May 1993) pp 2708-2710

126 HQ Hou CW Tu W Shan SJ Hwang JJ Song SNG Chu ldquoCharacterization of GaAsGaAsP strained multiple quantum wells grown by gas-source molecular beam epitaxyrdquo Journal of Vacuum Science amp Technology B (Microelectronics Processing and Phenomena) Vol 11 No 3 (May-June 1993) pp 854-856

127 BW Liang and CW Tu A kinetic model for As and P incorporation behaviors in GaAsP grown by gas-source molecular beam epitaxy Journal of Applied Physics Vol 74 No 1 (July 1993) pp 255-259

128 JCP Chang TP Chin CW Tu and KL Kavanagh Multiple dislocation loops in linearly graded InxGa1-xAs (0ltxlt053) on GaAs and InxGa1-xP (0ltxlt032) on GaP Applied Physics Letters Vol 63 No 4 (July 1993) pp 500-502

129 MC Ho TP Chin CW Tu and PM Asbeck Planarized growth of AlGaAsGaAs heterostructures on patterned substrates by molecular beam epitaxy Journal of Applied Physics Vol 74 No 3 (August 1993) pp 2128-2130

130 H Hillmer A Forchel and CW Tu An optical study of the lateral motion of 2-dimensional electron hole pairs in GaAsAlGaAs quantum wells Journal of Physics - Condensed Matterrdquo Vol 5 No 31 (August 1993) pp 5563-5580

131 HQ Hou AN Cheng HH Wieder WSC Chang and CW Tu Electroabsorption of InAsPInP strained multiple quantum wells for 13 microm waveguide modulators Applied Physics Letters Vol 63 No 13 (September 1993) pp 1833-1835

132 P Dreszer WM Chen D Wasik R Leon W Walukiewicz BW Liang CW Tu and ER Weber Electronic properties of low-temperature InP Journal of Electronic Materials Vol 22 No 12 (December 1993) pp 1487-1490

133 WM Chen P Dreszer ER Weber E Soumlrman B Monemar BW Liang and CW Tu Optically detected magnetic resonance studies of low-temperature InP Journal of Electronic Materials Vol 22 No 12 (December 1993) pp 191-194

134 CW Tu BW Liang and TP Chin Heavily carbon-doped p-type GaAs and In053Ga047As grown by gas-source molecular beam epitaxy using carbon tetrabromide Journal of Crystal Growth Vol 136 No 1-4 (March 1994) pp 191-194


9

135 HQ Hou CW Tu W Shan SJ Hwang JJ Song and SNG Chu Structural and optical characterizations of InAsPInP strained multiple quantum wells grown on InP (111)B substrates Journal of Vacuum Science amp Technology Vol B 12 No 2 (March-April 1994) pp 1116-1118

136 SL Fu TP Chin B Zhu CW Tu SS Lau and PM Asbeck Electrical properties of He+ ion-implanted GaInP Journal of Electronic Matererials Vol 23 No 4 (April 1994) pp 403-407

137 TP Chin HQ Hou CW Tu JCP Chang and N Otsuka InGaAsInP and InAsPInP quantum well structures on GaAs(100) with a linearly graded InGaP buffer layer grown by gas-source molecular beam epitaxy Applied Physics Letters Vol 64 No 15 (April 1994) pp 2001-2003

138 PW Yu DN Talwar HQ Hou and CW Tu 1356-eV exciton bound to the deep antisite double donor-P(In) in InP grown by gas source moleclar beam epitaxy Physical Review B Vol 49 No 15 (April 1994) pp 10735-10738

139 HQ Hou and CW Tu Optical property of InAsPInP strained quantum wells grown on InP (111)B and (100) substrates Journal of Applied Physics Vol 75 No 9 (May 1994) pp 4673-4679

140 WM Chen P Dreszer A Prasad A Kurpiewski ER Weber BW Liang and CW Tu Origin of n-type conductivity of low-temperature grown InP Journal of Applied Physics Vol 76 No 1 (July 1994) pp 600-602

141 JM Jacob DS Kim A Bouchalkha JJ Song J Klem and CW Tu Spatial characteristics of GaAs GaAs-like and AlAs-like LO phonons in GaAsAlxGa1-xAs superlattices the strong x-dependence Solid State Communications Vol 91 No 9 (September 1994) pp 721-724

142 BW Liang and CW Tu Group-V composition control for InGaAsP grown by gas-source molecular beam epitaxy Journal of Electronic Materials Vol 23 No 11 (November 1994) pp 1251-1254

143 DY Chu MK Chin WG Bi HQ Hou CW Tu and ST Ho Double-disk structure for output coupling in microdisk lasers Applied Physics Letters Vol 65 (December 1994) pp 3167

144 YM Hsin MC Ho XB Mei HH Liao TP Chin CW Tu and PM Asbeck Pseudomorphic AlInPInP heterojunction bipolar transistors Electronics Letters Vol 31 No 2 (January 1995) pp 141-142

145 HK Dong NY Li CW Tu M Geva and WC Mitchel A study of chemical beam epitaxy of GaAs using tris-dimethylaminoarsenic Journal of Electronic Materials Vol 24 No 2 (February 1995) pp 69-74

146 DS Kim A Bouchalkha JM Jacob JJ Song HQ Hou and CW Tu Hot-phonon generation in GaAsAlxGa1-xAs superlattices - observations and implications on the coherence length of LO phonons Physical Review B Vol 51 No 8 (February 1995) pp 5449-5452

147 WG Bi F Deng SS Lau and CW Tu High-resolution X-ray diffraction studies of AlGaP grown by gas-source molecular beam epitaxy Journal of Vacuum Science amp Technology B Vol 13 No 2 (March-April 1995) pp 754-757

148 NY Li HK Dong YM Hsin T Nakamura PM Asbeck and CW Tu Selective-area epitaxy of carbon-doped (Al)GaAs by chemical beam epitaxy Journal of Vacuum Science amp Technology B Vol 13 No 2 (March-April 1995) pp 664-666

149 HK Dong SCH Hung and CW Tu The effects of laser irradiation on InGaAsGaAs multiple quantum wells grown by metalorganic molecular beam epitaxy Journal of Electronic Materials Vol 24 No 4 (April 1995) pp 327-332

150 NY Li HK Dong CW Tu and M Geva P-type GaAs doped by diiodomethane (CI2H2) in molecular beam epitaxy (MBE) metalorganic MBE and chemical beam epitaxyrdquo Journal of Crystal Growth Vol 150 No 1-4 (May 1995) pp 246-250

151 NY Li YM Hsin HK Dong T Nakamura PM Asbeck and CW Tu Selectively regrown carbon-doped (Al)GaAs by chemical beam epitaxy with novel gas sources Journal of Crystal Growth Vol 150 No 1-4 (May 1995) pp 562-567


10

152 DY Chu ST Ho XZ Wang BW Wessels WG Bi CW Tu RP Espindola and SL Wu Observtion enhanced photoluminescence in erbium-doped semidonductor microdisk resonator Applied Physics Letters Vol 66 No 21 (May 1995) pp 2843-2845

153 CW Tu HK Dong and NY Li Metal-organic molecular beam epitaxy (MOMBE) and laser-modified MOMBE of III-V semiconductors Materials Chemistry amp Physics Vol 40 No 4 (May 1995) pp 260-266

154 SL Fu TP Chin MC Ho CW Tu and PM Asbeck Impact ionization coefficients in (100) GaInP Applied Physics Letters Vol 66 No 25 (June 1995) pp 3507-3509

155 HK Dong NY Li and CW Tu ldquoChemical beam epitaxy and laser-modified chemical beam epitaxy of InGaAs using tri-dimethylaminoarsenicrdquo Journal of Electronic Materials Vol 24 No 7 (July 1995) pp 827-832

156 AY Lew CH Yan CW Tu and ET Yu Characterization of arsenide phosphide heterostructure interfaces grown by gas-source molecular beam epitaxy Applied Physics Letters Vol 67 No 7 (August 1995) pp 932-934

157 WG Bi and CW Tu Optimization and characterization of interfaces of InGaAsInGaAsP quatum well structures grown by gas-source molecular beam epitaxy Journal of Applied Physics Vol 78 No 4 (August 1995) pp 2889-2891

158 JP Zhang DY Chu SL Wu ST Ho WG Bi and CW Tu Photonic-wire laser Physical Review Letters Vol 75 No 14 (October 1995) pp 2678-2681

159 JCP Chang JM Woodall MR Melloch I Lahiri DD Nolte NY Li and CW Tu Investigation of interface intermixing and roughening in low-temperature-grown AlAsGaAs multiple quantum wells during thermal annealing by chemical lattice imaging and x-ray diffraction Applied Physics Letters Vol 67 No 23 (December 1995) pp 3491-3493

160 CW Tu XB Mei CH Yan and WG Bi Growth and characterization of strain-compensated InAsPGaInP and InGaAsGaInP multiple quantum wells Materials Science amp Engineering B Solid State Materials for Advanced Technology Vol B 35 No 1-3 (December 1995) pp 166-170

161 CW Tu ldquoMolecular beam epitaxy and related growth techniquesrdquo JOM-Journal of the Minerals Metals amp Materials Society Vol 47 No 12 (December 1995) pp 34-37

162 XB Mei KK Loi HH Wieder WSC Chang and CW Tu Strain-compensated InAsPGaInP multiple quantum wells for 13 microm waveguide modulators Applied Physics Letters Vol 68 No 1 (January 1996) pp 90-92

163 OK Kwon K Kim KS Hyun YW Choi EH Lee XB Mei and CW Tu A novel all-optical bistable device in a noninterferometric double p-i(ESQWs)-n diode structurerdquo IEEE Photonics Technology Letters Vol 8 No 2 (February 1996) pp 224-226

164 KK Loi I Sakamoto XF Shao HQ Hou HH Liao XB Mei AN Cheng CW Tu and WSC Chang Accurate de-embedding technique for on-chip small signal characterization of high-frequency optical modulator IEEE Photonics Technology Letters Vol 8 No 3 (March 1996) pp 402-404

165 CH Yan and CW Tu Study on improving InxGa1-xAsInyGa1-yP heterointerfaces in gas-source molecular beam epitaxy Journal of Vacuum Science amp Technology B Vol 14 No 3 (March-June 1996) pp 2331-2334

166 JP Zhang DY Chu SL Wu WG Bi RC Tiberio RM Joseph A Taflove CW Tu ST Ho ldquoNanofabrication of 1-D photonic bandgap structures along a photonic wirerdquo IEEE Photonics Technology Letters Vol 8 No 4 (April 1996) pp 491-493

167 KK Loi I Sakamoto XB Mei CW Tu and WSC Chang High-efficiency 13 microm InAsP-GaInP MQW electroabsorption waveguide modulators for microwave fiber-optic links IEEE Photonics Technology Letters Vol 8 No 5 (May 1996) pp 626-628


11

168 XB Mei WG Bi CW Tu LJ Chou and KC Hsieh ldquoQuantum confined Stark effect near 15 μm wavelength in InAs053P047GayIn1-yP strain-balanced quantum wellsrdquo Journal of Vacuum Science amp Technology B Vol 14 No 3 (May-June 1996) pp 2327-2330

169 WG Bi and CW Tu Material optimization for a polarized electron source from strained GaAsBe grown on an InGaP pseudosubstrate Journal of Vacuum Science amp Technology B Vol 14 No 3 (May-June 1996) pp 2282-2285

170 MR Melloch I Lahiri DD Nolte JCP Chang ES Harmon JM Woodall NY Li and CW Tu Molecular-beam epitaxy of high-quality nonstoichiometric multiple quantum wells Journal of Vacuum Science amp Technology B Vol 14 No 3 (May-June 1996) pp 2271-2274

171 HQ Hou and CW Tu Field Screening in (111) B InAsPInP strained quantum wells Journal of Electronic Materials Vol 25 No 6 (June 1996) pp 1019-1022

172 CW Tu H K Dong and NY Li Growth etching doping and effects of Ar+ laser irradiation in chemical beam epitaxy of GaAs with novel precursors Journal of Crystal Growth Vol 163 (June 1996) pp 187-194

173 WS Wong NY Li H K Dong F Deng S S Lau CW Tu J Hays S Bidnyk and J J Song Growth of GaN by gas-source molecular beam epitaxy by ammonia and by plasma generated nitrogen radicals Journal of Crystal Growth Vol 164 No 1-4 (July 1996) pp 159-166

174 NY Li WS Wong D H Tomich H K Dong J S Solomon J T Grant and CW Tu Growth study of chemical beam epitaxy GaNxP1-x using NH3 and tertiarybutylphosphine Journal of Crystal Growth Vol 164 No 1-4 (July 1996) pp 180-184

175 C H Yan AY Lew E T Yu and CW Tu P2-induced PAs exchange on GaAs during gas-source molecular beam epitaxy growth interruptions Journal of Crystal Growth Vol 164 No 1-4 (July 1996) pp 77-83

176 CH Yan and CW Tu Synthesis of highly strained InyGa1-yPInxGa1-xAsInGa1-xP quantum well structures with strain compensation Journal of Crystal Growth Vol 164 No 1-4 (July 1996) pp 276-280

177 NY Li H K Dong WS Wong and CW Tu An evaluation of alternative precursors in chemical beam epitaxy tris-dimethylaminoarsenic tris-dimethylaminophosphorus and tertiarybutylphosphine Journal of Crystal Growth Vol 164 No 1-4 (July 1996) pp 112-116

178 WG Bi X B Mei and CW Tu Growth studies of GaP on Si by gas-source molecular beam epitaxy Journal of Crystal Growth Vol 164 No 1-4 (July 1996) pp 256-262

179 WG Bi and CW Tu Gas-source molecular beam epitaxy and characterization of InGaAsInGaAsP quantum well structures on InP Journal of Electronic Materials Vol 25 No 7 (July 1996) pp1049-1053

180 S Niki P J Fons A Yamada T Kurafuji WG Bi and CW Tu High quality CuInSe2 films grown on pseudo-lattice-matched substrates by molecular beam epitaxy Applied Physics Letters Vol 69 No 5 (July 1996) pp 647-649

181 NY Li WS Wong D H Tomich K L Kavanagh and CW Tu Tensile strain relaxation in GaNxP1-x (xle01) grown by chemical beam epitaxy Journal of Vacuum Science amp Technology B Vol 14 No 4 (July-August 1996) pp 2952-2956

182 WG Bi and CW Tu Study on interface abruptness of InxGa1-xAsInyGa1-yAsz P1-z heterostructures grown by gas-source molecular beam epitaxy Journal of Vacuum Science amp Technology B Vol 14 No 4 (July-August 1996) pp 2918-2921

183 JP Zhang D Y Chu S L Wu WG Bi CW Tu and S T Ho Directional light output from photonic-wire microcavity semiconductor lasers IEEE Photonics Technology Letters Vol 8 No 8 (August 1996) pp 968-970


12

184 WG Bi and CW Tu Highly strained InxGa1-xPGaP quantum wells grown on GaP and on an Inx2Ga1-x2P buffer layer by gas-source molecular beam epitaxy Journal of Crystal Growth Vol 165 No 3 (August 1996) pp 210-214

185 WG Bi and CW Tu N incorporation in InP and band gap bowing of InNxP1-x Journal of Applied Physics Vol 80 No 3 (August 1996) pp 1934-1936

186 IA Buyanova WM Chen AV Buyanov WG Bi and CW Tu Optical detection of quantum oscillations in InPInGaAs quantum structures Applied Physics Letters Vol 69 No 6 (August 1996) pp 809-811

187 CW Tu Issues in epitaxial growth of phosphides and antimonides Computational Materials Science Vol 6 No 2 (August 1996) pp188-196

188 CS Wu CP Wen P Reiner CW Tu and HQ Hou Radiation hard blocked tunneling band GaAsAlGaAs superlattice long wavelength infrared detectors Solid-State Electronics Vol 39 No 9 (September 1996) pp 1253-1268

189 WM Chen IA Buyanova AV Buyanov T Lundstrom WG Bi and CW Tu Intrinsic doping a new approach for n-type modulation doping in InP-based heterostructures Physical Review Letters Vol 77 No 13 (September 1996) pp 2734-2737

190 AY Lew CH Yan CW Tu and ET Yu Characterization of arsenidephosphide heterostructure interfaces by scanning tunneling microscopy Applied Surface Science Vol 104 (September 1996) pp 522-528

191 BA Morgan AA Talin WG Bi KL Kavanagh RS Williams CW Tu T Yasuda T Yasui and Y Segawa ldquoComparison of Au contacts to Si GaAs InxGa1-xP and ZnSe measured by ballistic electron emission microscopyrdquo Materials Chemistry And Physics Vol 46 No 2-3 (November-December 1996) pp 224-229

192 WG Bi and CW Tu N incorporation in GaP and bandgap bowing of GaNxP1-x Applied Physics Letters Vol 69 No 24 (December 1996) pp 3710-3712

193 HK Dong NY Li WS Wong and CW Tu ldquoGrowth doping and etching of GaAs and InGaAs using tris-dimethylaminoarsenicrdquo Journal of Vacuum Science amp Technology B Vol 15 No 1 (January-February 1997) pp 159-166

194 AY Lew CH Yan RB Welstand JT Zhu PKL Yu CW Tu and ET Yu ldquoInterface structure in arsenidephosphide heterostructures grown by gas-source MBE and low-pressure MOVPErdquo Journal of Electronic Materials Vol 26 No 2 (February 1997) pp 64-69

195 QZ Liu L Shen KV Smith CW Tu ET Yu and SS Lau ldquoEpitaxy of Al films on GaN studied by reflection high-energy electron diffraction and atomic force microscopyrdquo Applied Physics Letters Vol 70 No 8 (February 1997) pp 990-992

196 WG Bi and CW Tu ldquoGas-source molecular beam epitaxial growth and characterization of InNxP1-x on InPrdquo Journal of Electronic Matererials Vol 26 No 3 (March 1997) pp 252-256

197 WM Chen IA Buyanova WG Bi and CW Tu ldquoIntrinsic modulation doping in InP-based heterostructuresrdquo Materials Science Forum Vol 258 No 2 (March 1997) pp 805-812

198 D Wasik L Dmowski J Micuki J Lusakowski L Hsu L W Walukiewicz WG Bi and CW Tu ldquoPressure dependent two-dimensional electron transport in defect doped InGaAsInP heterostructuresrdquo Materials Science Forum Vol 258 No 2 (March 1997) pp 813-818

199 IA Buyanova T Lundstrom AV Buyanov WM Chen WG Bi and CW Tu ldquoStrong effects of carrier concentration on the Fermi-edge singularity in modulation-doped InPInxGa1-xAs heterostructuresrdquo Physical Review B Vol 55 No 11 (March 1997) pp 7052-7058

200 WG Bi and CW Tu ldquoBowing parameter of the band-gap energy of GaNxAs1-xrdquo Applied Physics Letters Vol 70 No 12 (March 1997) pp 1608-1610


13

201 NY Li YM Hsin WG Bi PM Asbeck and CW Tu ldquoIn situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenicrdquo Applied Physics Letters Vol 70 No 19 (May 1997) pp 2589-2591

202 NY Li YM Hsin PM Asbeck and CW Tu ldquoImproving the etchedregrown GaAs interface by in situ etching using tris-dimethylaminoarsenicrdquo Journal of Crystal Growth Vol 175 No 1 (May 1997) pp 387-392

203 WG Bi and CW Tu ldquoN incorporation in GaNxP1-x and InNxP1-x using a RF N plasma sourcerdquo Journal of Crystal Growth Vol 175 No 1 (May 1997) pp 145-149

204 S Niki PJ Fons H Shibata T Kurafuji A Yamada Y Okada H Oyanagi WG Bi and CW Tu ldquoEffects of strain on the growth and properties of CuInSe2 epitaxial filmsrdquo Journal of Crystal Growth Vol 175 No 2 (May 1997) pp 1051-1056

205 XB Mei KK Loi WSC Chang and CW Tu ldquoImproved electroabsorption properties in 13 m MQW waveguide modulators by a modified doping profilerdquo Journal of Crystal Growth Vol 175 No 2 (May 1997) pp 994-998

206 WG Bi Y Ma JP Zhang L W Wang ST Ho and CW Tu ldquoImproved high-temperature performance of 13-15 mu m InNAsP-InGaAsP quantum-well microdisk lasersrdquo IEEE Photonics Technology Letters Vol 9 No 8 (August 1997) pp 1072-1074

207 CW Tu and XB Mei ldquoStrain-compensated InAsPGaInP multiple-quantum-well waveguide modulators and in situ monitored AlGaAsAlAs mirrors grown by gas-source molecular beam epitaxyrdquo Materials Chemistry and Physics Vol 51 No 1 (October 1997) pp 1-5

208 WG Bi and CW Tu ldquoGrowth and characterization of InNxAsyP1-x-yInP strained quantum well structuresrdquo Applied Physics Letters Vol 72 No 10 (March 1998) pp 1161-1163

209 SL Zuo WG Bi CW Tu and ET Yu ldquoA scanning tunneling microscopy study of atomic-scale clustering in InAsPInP heterostructuresrdquo Applied Physics Letters Vol 72 No 17 (April 1998) pp 2135-2137

210 HP Xin and CW Tu ldquoGaInNAsGaAs multiple quantum wells grown by gas-source molecular beam epitaxyrdquo Applied Physics Letters Vol 72 No 19 (May 1998) pp 2442-2444

211 KK Loi XB Mei JH Hodiak CW Tu and WSC Chang ldquo38GHz bandwidth 13 m MQW electroabsorption modulators for RF photonic linksrdquo Electronic Letters Vol 34 (May 1998) pp 1018-1019

212 DH Tomich KG Eyink ML Seaford WF Taferner CW Tu and WV Lampert ldquoAtomic force microscopy correlated with spectroscopic ellipsometry during homepitaxial growth on GaAs(111)B substratesrdquo Journal of Vacuum Science amp Technology B Vol 16 No 3 (May-June 1998) pp 1479-1483

213 Y Zhao F Deng SS Lau and CW Tu ldquoEffects of arsenic in gas-source molecular beam epitaxyrdquo Journal of Vacuum Science amp Technology B Vol 16 No 3 (May-June 1998) pp 1297-1299

214 CW Tu WG Bi Y Ma JP Zhang LW Wang and ST Ho ldquoA novel material for long-wavelength lasers InNAsPrdquo IEEE Journal of Selected Topics in Quantum Electronics Vol 4 No 3 (May-June 1998) pp 510-513

215 YM Hsin NY Li CW Tu and PM Asbeck ldquoAlGaAsGaAs HBTs with extrinsic base regrowthrdquo Journal of Crystal Growth Vol 188 No 1-4 (June 1998) pp 355-358

216 AY Egorov AR Kovsh VM Zhukov PS Kopev and CW Tu ldquoA thermodynamic analysis of the growth of III-V compounds with two volatile group V elements by molecular-beam epitaxyrdquo Journal of Crystal Growth Vol 188 No 1-4 (June 1998) pp 69-74

217 NY Li and CW Tu ldquoLow-resistance polycrystalline GaAs grown by gas-source molecular beam epitaxy using CBr4rdquoJournal of Crystal Growth Vol 188 No 1-4 (June 1998) pp 45-49


14

218 QZ Liu WX Chen NY Li LS Yu CW Tu PKL Yu SS Lau and HP Zappe ldquoPlanar semiconductor lasers using the photoelastic effectrdquo Journal of Applied Physics Vol 83 No 12 (June 1998) pp 7442-7447

219 KK Loi JH Hodiak XB Mei CW Tu and WSC Chang ldquoLinearization of 13-m MQW electroabsorption modulators using an all-optical frequency-insensitive techniquerdquo IEEE Photonic Technology Letters Vol 10 No 7 (July 1998) pp 964-966

220 SL Zuo WG Bi CW Tu and ET Yu ldquoAtomic-scale compositional structure of InAsPInP and InNAsPInP hetero structures grown by molecular-beam epitaxyrdquo Journal of Vacuum Science amp Technology B Vol 16 No 4 (July-August 1998) pp 2395-2398

221 KK Loi JH Hodiak XB Mei CW Tu WSC Chang DT Nichols LJ Lembo JC Brock ldquoLow-loss 13-m MQW electroabsorption modulators for high-linearity analog optical linksrdquo IEEE Photonics Technology Letters Vol 10 No 11 (November 1998) pp 1572-1574

222 BQ Shi and CW Tu ldquoModeling study of silicon incorporation from SiBr4 in GaAs layers grown by chemical beam epitaxyrdquo Journal of Crystal Growth Vol 195 No 1-4 (December 1998) pp 740-745

223 BQ Shi and CW Tu ldquoA kinetic model for tris(dimethylamino) arsine decomposition on GaAs(100) surfacesrdquo Journal of Electronic Materials Vol 28 No 1 (January 1999) pp 43-49

224 TY Seong IT Bae CJ Choi Y Zhao and CW Tu ldquoOrdering and microstructures of GaN1-xAsx layers grown on (0001) GaNsapphire substratesrdquo Electrochemical and Solid State Letters Vol 2 No 2 (February 1999) pp 94-96

225 TY Seong IT Bae CJ Choi Y Zhao and CW Tu ldquoOrdering and microstructures of GaN1-xAsx layers grown on (0001) GaNsapphire substraterdquo Electrochemical and Solid State Letters Vol 2 No 2 (February 1999) pp 94-96

226 TY Seong IT Bae CJ Choi DY Noh Y Zhao and CW Tu ldquoMicrostructures of GaN1-xPx layers grown on (0001)GaN substrates by gas source molecular beam epitaxyrdquo Journal of Applied Physics Vol 85 No 6 (March 1999) pp 3192-3197

227 HP Xin KL Kavanagh ZQ Zhu and CW Tu ldquoObservation of quantum dot-like behavior of GaInNAs in GaInNAsGaAs quantum wellsrdquo Applied Physics Letters Vol 74 No 16 (April 1999) pp 2337-2339

228 DH Tomich WC Mitchel P Chow and CW Tu ldquoStudy of interfaces in GaInSbInAs quantum wells by high-resolution X-ray diffraction and reciprocal space mappingrdquo Journal of Crystal Growth Vol 201-202 (May 1999) pp 868-871

229 IA Buyanova WM Chen WG Bi YP Zeng and CW Tu ldquoIntrinsic modulation doping in InP-based structures properties relevant to device applicationsrdquo Journal of Crystal Growth Vol 201-202 (May 1999) pp 786-789

230 HP Xin K L Kavanagh M Kondow and C W Tu ldquoEffects of rapid thermal annealing on GaInNAsGaAs multiple quantum wellsrdquo Journal of Crystal Growth Vol 201-202 (May 1999) pp 419-422

231 Y Zhao CW Tu IT Bae and TY Seong ldquoGrowth of cubic GaN by phosphorus-mediated molecular beam epitaxyrdquo Applied Physics Letters Vol 74 No 21 (May 1999) pp 3182-3184

232 M Kondow BQ Shi and CW Tu ldquoChemical beam etching of GaAs using a novel precursor of tertiarybutylchloride (TBCl)rdquo Japanese Journal of Applied Physics Part 2-Letters Vol 38 No 6AB (June 1999) pp L617-L619

233 BQ Shi and CW Tu ldquoChemical beam epitaxy of InP with Ar+ laser irradiationrdquo Journal of the Electrochemical Society Vol 146 No 7 (July 1999) pp 2679-2682

234 IA Buyanova WM Chen G Pozina JP Bergman B Monemar HP Xin and CW Tu ldquoMechanism for low-temperature photoluminescence in GaNAsGaAs structures grown by molecular-beam epitaxyrdquo Applied Physics Letters Vol 75 No 4 (July 1999) pp 501-503


15

235 ET Yu SL Zuo WG Bi CW Tu AA Allerman RM Biefeld ldquoNanometer-scale compositional variations in III-V semiconductor heterostructures characterized by scanning tunnelingrdquo Journal of Vacuum Science amp Technology A Vol 17 No 4 (July-August 1999) pp 2246-2250

236 HP Xin KL Kavanagh ZQ Zhu and CW Tu ldquoQuantum dot-like behavior of GaInNAs in GaInNAsGaAs quantum wells grown by gas-source molecular-beam epitaxyrdquo Journal of Vacuum Science amp Technology B Vol 17 No 4 (July-August 1999) pp 1649-1653

237 WM Chen AV Buyanov IA Buyanova T Lundstrom WG Bi YP Zeng and CW Tu ldquoTransport properties of intrinsically and extrinsically modulation doped InPInGaAs heterostructuresrdquo Physica Scripta Vol T79 (August 1999) pp 103-105

238 HP Xin CW Tu and M Geva ldquoAnnealing behavior of p-type Ga0892In0108NxAs1-x (0 lt= X lt= 0024) grown by gas-source molecular beam epitaxyrdquo Applied Physics Letters Vol 75 No 10 (September 1999) pp 1416-1418

239 IA Buyanova WM Chen WG Bi YP Zeng and CW Tu ldquoThermal stability and doping efficiency of intrinsic modulation doping in InP-based structuresrdquo Applied Physics Letters Vol 75 No 12 (September 1999) pp 1733-1735

240 IA Buyanova WM Chen G Pozina B Monemar HP Xin and CW Tu ldquoMechanism for light emission in GaNAsGaAs structures grown by molecular beam epitaxyrdquo Physica Status Solidi B-Basic Research Vol 216 No 1 (November 1999) pp 125-129

241 IA Buyanova WM Chen B Monemar HP Xin and CW Tu ldquoEffect of growth temperature on photoluminescence of GaNAsGaAs quantum well structuresrdquo Applied Physics Letters Vol 75 No 24 (December 1999) pp 3781-3783

242 HP Xin KL Kavanagh and CW Tu ldquoGas-source molecular beam epitaxial growth and thermal annealing of GaInNAsGaAs quantum wellsrdquo Journal of Crystal Growth Vol 208 No 1-4 (January 2000) pp 145-152

243 M Kondow BQ Shi and CW Tu ldquoIn situ etching using a novel precursor of tertiarybutylchloride (TBCl)rdquo Journal of Crystal Growth Vol 209 No 2-3 (February 2000) pp 263-266

244 M Sopanen HP Xin and CW Tu ldquoSelf-assembled GaInNAs quantum dots for 13 and155 m emission on GaAsrdquo Applied Physics Letters Vol 76 No 8 (February 2000) pp 994-996

245 Y Zhang A Mascarenhas HP Xin and CW Tu ldquoValence-band splitting and shear deformation potential of dilute GaAs1-xNx alloysrdquo Physical Review B Vol 61 No 7 (February 2000) pp 4433-4436

246 HP Xin CW Tu Y Zhang and A Mascarenhas ldquoEffects of nitrogen on the band structure of GaNxP1-x alloysrdquo Applied Physics Letters Vol 76 No 10 (March 2000) pp 1267-1269

247 BQ Shi and CW Tu ldquoA study of Ar+ laser-assisted Si doping of GaAs by chemical beam epitaxyrdquo Applied Physics Letters Vol 76 No 13 (March 2000) pp 1716-1718

248 Y Zhang A Mascarenhas HP Xin and CW Tu ldquoFormation of an impurity band and its quantum confinement in heavily doped GaAs Nrdquo Physical Review B Vol 61 No 11 (March 2000) pp 7479-7482

249 J Mikucki M Baj D Wasik W Walukiewicz WG Bi and CW Tu ldquoMetastability of the phosphorus antisite defect in low-temperature InPrdquo Physical Review B Vol 61 No 11 (March 2000) pp 7199-7202

250 BQ Shi and CW Tu ldquoExperimental and numerical studies of Ar+-laser-assisted Si doping of GaAs with SiBr4 by chemical beam epitaxyrdquo Journal of Crystal Growth Vol 210 No 4 (March 2000) pp 444-450

251 M Kozhevnikov V Narayanamurti CV Reddy HP Xin CW Tu A Mascarenhas and Y Zhang ldquoEvolution of GaAs1-xNx conduction states and giant AuGaAs1-xNx Schottky barrier reduction studied by ballistic electron emission spectroscopyrdquo Physical Review B Vol 61 No 12 (March 2000) pp R7861-R7864

252 J Siwiec J Mikucki M Baj W Walukiewicz WG Bi and CW Tu ldquoPressure reduction of parasitic parallel conduction in InGaAsInP heterostructures containing LT-InP layersrdquo High Pressure Research Vol 18 No 1-6 (March 2000) pp 75-80


16

253 W Shan W Walukiewicz KM Yu J Wu JW Ager EE Haller HP Xin and CW Tu ldquoNature of the fundamental band gap in GaNxP1-x alloysrdquo Applied Physics Letters Vol 76 No 22 (May 2000) pp 3251-3253

254 HP Xin CW Tu and M Geva ldquoEffects of hydrogen on doping of GaInNAs grown by gas-source molecular beam epitaxyrdquo Journal of Vacuum Science amp Technology Vol 18 No 3 (May-June 2000) pp 1476-1479

255 IA Buyanova WM Chen B Monemar HP Xin and CW Tu ldquoPhotoluminescence characterization of GaNAsGaAs structures grown by molecular beam epitaxyrdquo Materials Science and Engineering B-Solid State Materials For Advanced Technology Vol 75 No 2-3 (June 2000) pp 166-169

256 WM Chen IA Buyanova and CW Tu ldquoApplications of defect engineering in InP-based structuresrdquo Materials Science and Engineering B-Solid State Materials For Advanced Technology Vol 75 No 2-3 (June 2000) pp 103-109

257 BQ Shi and CW Tu ldquoA reaction model for chemical beam epitaxy with triethylgallium and tris(dimethylamino)arsenicrdquo Journal of Crystal Growth Vol 216 No 1-4 (July 2000) pp 87-96

258 BQ Shi M Kondow and CW Tu ldquoChemical beam epitaxy of AlAs using novel group-V precursorsrdquo Journal of Crystal Growth Vol 216 No 1-4 (July 2000) pp 80-86

259 BQ Shi and CW Tu ldquoInvestigations on the mechanisms responsible for Ar+-laser-induced growth enhancement of GaAs by chemical beam epitaxyrdquo Journal of Crystal Growth Vol 217 No 1-2 (July 2000) pp 91-101

260 BQ Shi and CW Tu ldquoEvaluation of temperature rise on semiconductor surfaces associated with scanning Ar+ lasersrdquo Journal of Crystal Growth Vol 217 No 1-2 (July 2000) pp 82-90

261 Y Zhang B Fluegel A Mascarenhas HP Xin and CW Tu ldquoOptical transitions in the isoelectronically doped semiconductor GaP N An evolution from isolated centers pairs and clusters to an impurity bandrdquo Physical Review B Vol 62 No 7 (August 2000) pp 4493-4500

262 HP Xin RJ Welty and CW Tu ldquoGaN0011P0989-GaP double-heterostructure red light-emitting diodes directly grown on GaP substratesrdquo IEEE Photonics Letters Vol 12 No 8 (August 2000) pp 960-962

263 PN Hai WM Chen IA Buyanova HP Xin and CW Tu ldquoDirect determination of electron effective mass in GaNAsGaAs quantum wellsrdquo Applied Physics Technology Letters Vol 77 No 12 (September 2000) pp 1843-1845

264 HP Xin RJ Welty and CW Tu ldquoGaN0011P0989 red light-emitting diodes directly grown on GaP substratesrdquo Applied Physics Letters Vol 77 No 13 (September 2000) pp 1946-1948

265 HP Xin and CW Tu ldquoPhotoluminescence properties of GaNPGaP multiple quantum wells grown by gas source molecular beam epitaxyrdquo Applied Physics Letters Vol 77 No 14 (October 2000) pp 2180-2182

266 IA Buyanova G Pozina PN Hai NQ Thinh JP Bergman WM Chen HP Xin and CW Tu ldquoMechanism for rapid thermal annealing improvements in undoped GaNxAs1-xGaAs structures grown by molecular beam epitaxyrdquo Applied Physics Letters Vol 77 No 15 (October 2000) pp 2325-2327

267 AP Young LJ Brillson Y Naoi and CW Tu ldquoThe effect of nitrogen ion damage on the optical and electrical properties of MBE GaN grown on MOCVD GaNsapphire templatesrdquo MRS Internet Journal Of Nitride Semiconductor Research Vol 5 No W11-56 (November-December 2000) pp U679-U684

268 IA Buyanova G Pozina PN Hai WM Chen HP Xin and CW Tu ldquoType I band alignment in the GaNxAs1-xGaAs quantum wellsrdquo Physical Review B Vol 63 No 3 (January 2001) pp 033303-1-033303-4

269 NQ Thinh IA Buyanova PN Hai WM Chen HP Xin and CW Tu ldquoSignature of an intrinsic point defect in GaNxAs1-xrdquo Physical Review B Vol 63 No 3 (January 2001) pp 033203-1-033203-5

270 W Shan W Walukiewicz KM Yu JW Ager EE Haller JF Geisz DJ Friedman JM Olson SR Kurtz HP Xin and CW Tu ldquoBand anticrossing in III-N-V alloysrdquo Physica Status Solidi B-Basic Research Vol 223 No 1 (January 2001) pp 75-85


17

271 KM Yu W Walukiewicz J Wu JW Beeman JW Ager EE Haller W Shan HP Xin and CW Tu ldquoSynthesis of InNxP1-x thin films by N ion implantationrdquo Applied Physics Letters Vol 78 No 8 (February 2001) pp 1077-1079

272 Y Zhang A Mascarenhas JF Geisz HP Xin and CW Tu ldquoDiscrete and continuous spectrum of nitrogen-induced bound states in heavily doped GaAs1-xNxrdquo Physical Review B Vol 63 No 8 (February 2001) pp 085205-1-085205-8

273 Y Zhang A Mascarenhas HP Xin and CW Tu ldquoScaling of band-gap reduction in heavily nitrogen doped GaAsrdquo Physical Review B Vol 63 No 16 (April 2001) pp 161303-1-161303-4

274 PN Hai WM Chen IA Buyanova B Monemar HP Xin and CW Tu ldquoProperties of GaAsNGaAs quantum wells studied by optical detection of cyclotron resonancerdquo Materials Science and Engineering B-Solid State Materials for Advanced Technology Vol 82 No 1-3 (May 2001) pp 218-220

275 IA Buyanova WM Chen G Pozina PN Hai B Monemar HP Xin and CW Tu ldquoOptical properties of GaNAsGaAs structuresrdquo Materials Science and Engineering B-Solid State Materials for Advanced Technology Vol 82 No 1-3 (May 2001) pp 143-147

276 IA Buyanova WM Chen EM Goldys HP Xin and CW Tu ldquoStructural properties of a GaNxP1-x alloy Raman studiesrdquo Applied Physics Letters Vol 78 No 25 (June 2001) pp 3959-3961

277 HP Xin RJ Welty YG Hong and CW Tu ldquoGas-source MBE growth of Ga(In)NPGaP structures and their applications for red light-emitting diodesrdquo Journal of Crystal Growth Vol 227 (July 2001) pp 558-561

278 YG Hong CW Tu and RK Ahrenkiel ldquoImproving properties of GaInNAs with a short-period GaInAsGaNAs superlatticerdquo Journal of Crystal Growth Vol 227 (July 2001) pp 536-540

279 YG Hong R Andre and CW Tu ldquoGas-source molecular beam expitaxy of GaInNPGaAs and a study of its band lineuprdquo Journal of Vacuum Science amp Technology B Vol 19 No 4 (July-August 2001) pp 1413-1416

280 J Wu W Shan W Walukiewicz KM Yu JW Ager EE Haller HP Xin and CW Tu ldquoEffect of band anticrossing on the optical transitions in GaAs1-xNxGaAs multiple quantum wellsrdquo Physical Review B Vol 64 No 8 (August 2001) pp 085320-1-085320-4

281 CW Tu ldquoIII-N-V low-bandgap nitrides and their device applicationsrdquo Journal of Physics-Condensed Matter Vol 13 No 32 (August 2001) pp 7169-7182

282 KM Yu W Walukiewicz J Wu JW Beeman JW Ager EE Haller W Shan HP Xin CW Tu and MC Ridgway ldquoFormation of diluted III-V nitride thin films by N ion implantationrdquo Journal of Applied Physics Vol 90 No 5 (September 2001) pp 2227-2234

283 NQ Thinh IA Buyanova WM Chen HP Xin and CW Tu ldquoFormation of nonradiative defects in molecular beam epitaxial GaNxAs1-x studied by optically detected magnetic resonancerdquo Applied Physics Letters Vol 79 No 19 (November 2001) pp 53089-53091

284 Y Zhang S Francoeur A Mascarenhas HP Xin and CW Tu ldquoElectronic structure of heavily and randomly nitrogen doped GaAs near the fundamental band gaprdquo Physica Status Solidi B-Basic Research Vol 228 No 1 (November 2001) pp 287-291

285 AP Young LJ Brillson Y Naoi and CW Tu ldquoChemical composition morphology and deep level electronic states of GaN (0001) (1X1) surfaces prepared by indium decappingrdquo Journal of Vacuum Science amp Technology B Vol 19 No 6 (November-December 2001) pp 2063-2066

286 IA Buyanova WM Chen EM Goldys MR Phillips HP Xin and CW Tu ldquoStrain relaxation in GaNxP1-x alloy effect on optical propertiesrdquo Physica B Vol 308 (December 2001) pp 106-109

287 RJ Welty HP Xin K Mochizuki CW Tu and PM Asbeck ldquoGaAsGa089In011N002As098GaAs NpN double heterojunction bipolar transistor with low turn-on voltagerdquo Solid-State Electronics Vol 46 No 1 (January 2002) pp 1-5


18

288 R Andre S Wey and CW Tu ldquoCompetition between As and P for incorporation during gas-source molecular beam epitaxy of InGaAsPrdquo Journal of Crystal Growth Vol 235 No 1-4 (February 2002) pp 65-72

289 IA Buyanova GY Rudko WM Chen HP Xin and CW Tu ldquoRadiative recombination mechanism in GaNxP1-x alloysrdquo Applied Physics Letters Vol 80 No 10 (March 2002) pp 1740-1742

290 YG Hong AY Egorov and CW Tu ldquoGrowth of GaInNAs quaternaries using a digital alloy techniquerdquo Journal of Vacuum Science amp Technology B Vol 20 No 3 (May-June 2002) pp 1163-1166

291 J Wu W Walukiewicz KM Yu JW Ager EE Haller YG Hong HP Xin and CW Tu ldquoBand anticrossing in GaP1-xNx alloysrdquo Physical Review B Vol 65 No 24 (June 2002) pp 241303-1-241303-4

292 IA Buyanova G Pozina PN Hai W Chen H Xin and CW Tu ldquoEvidence for type I band alignment in GaNAsGaAs quantum structures by optical spectroscopiesrdquo Physica E Low-Dimensional Systems and Nanostructures Vol 13 No 2-4 (March 2002) pp 1074-1077

293 YG Hong and CW Tu ldquoOptical properties of GaAsGaNxAs1-x quantum well structures grown by migration-enhanced epitaxyrdquo Journal of Crystal Growth Vol 242 No 1-2 (July 2002) pp 29-34

294 IA Buyanova G Pozina G JP Bergman W Chen H Xin and CW Tu ldquoTime-resolved studies of photoluminescence in GaNxP1-x alloys Evidence for indirect-direct band gap crossoverrdquoApplied Physics Letters Vol 81 No 1 (July 2002) pp 52-54

295 PM Asbeck RJ Welty CW Tu H Xin and R Welser ldquoHeterojunction bipolar transistors implemented with GaInNAs materialsrdquo Semiconductor Science and Technology Vol 17 No 8 (August 2002) pp 898-906

296 IA Buyanova WM Chen and CW Tu ldquoMagneto-optical and light-emission properties of III-As-N semiconductorsrdquo Semiconductor Science and Technology Vol 17 No 8 (August 2002) pp 815-822

297 GY Rudko IA Buyanova WM Chen H Xin and CW Tu ldquoTemperature dependence of the GaNxP1-x band gap and effect of band crossoverrdquo Applied Physics Letters Vol 81 No 21 (November 2002) pp 3984-3986

298 CV Reddy RE Martinez V Narayanamurti H Xin and CW Tu ldquoEvolution of the GaNxP1-x alloy band structure A ballistic electron emission spectroscopic investigationrdquo Physical Review B Vol 66 No 23 (December 2002) pp 235313-1-235313-4

299 GY Rudko IA Buyanova WM Chen H Xin and CW Tu ldquoTemperature behavior of the GaNP band gap energyrdquo Solid State Electronics Vol 47 No 3 (March 2003) pp 493-496

300 IA Buyanova WM Chen CW Tu ldquoRecombination processes in N-containing III-V ternary alloysrdquo Solid State Electronics Vol 47 No 3 (March 2003) pp 467-475

301 XD Luo JS Huang ZY Xu C Yang J Liu W Ge Y Shang A Mascarenhas H Xin and CW Tu ldquoAlloy states in dilute GaAs1-xNx alloys (x lt 1)rdquo Applied Physics Letters Vol 82 No 11 (March 2003) pp 1697-1699

302 MH Kim FS Juang YG Hong CW Tu and SJ Park ldquoSingle-crystal zincblende GaN grown on GaP (100) substrate by molecular beam epitaxyrdquo Journal of Crystal Growth Vol 251 No 1-4 (April 2003) pp 465-470

303 YG Hong FS Juang MH Kim and CW Tu ldquoGrowth and characterization of GaInNP grown on GaAs substratesrdquo Journal of Crystal Growth Vol 251 No 1-4 (April 2003) pp 437-442

304 AY Egorov VA Odnobludov VV Mamutin A Zhukov A Tsatsulrsquonikov N Kryzhanovskaya V Unstinov Y Hong and CW Tu ldquoValence band structure of GaAsN compounds and band-edge lineup in GaAsGaAsNInGaAs heterostructuresrdquo Journal of Crystal Growth Vol 251 No 1-4 (April 2003) pp 417-421

305 IA Buyanova M Izadifard WM Chen A Polimeni M Capizzi H Xin and CW Tu ldquoHydrogen-induced improvements in optical quality of GaNAs alloysrdquo Applied Physics Letters Vol 82 No 21 (May 2003) pp 3662-3664


19

306 CW Tu and PKL Yu ldquoMaterial properties of III-V semiconductors for lasers and detectorsrdquo MRS Bulletin Vol 28 No 5 (May 2003) pp 345-349

307 A Polimeni M Bissiri M Felici M Capizzi I Buyanova W Chen H Xin and CW Tu ldquoNitrogen passivation induced by atomic hydrogen The GaP1-yNy caserdquo Physical Review B Vol 67 No 20 (May 2003) pp 201303-1-201301-4

308 YJ Wang X Wei Y Zhang A Mascarenhas H Xin Y Hong and CW Tu ldquoEvolution of the electron localization in a nonconventional alloy system GaAs1-xNx probed by high-magnetic-field photoluminescencerdquo Applied Physics Letters Vol 82 No 25 (June 2003) pp 4453-4455

309 G Yulin L Yijun Z Jiansheng Y Zhang A Mascarenhas H Xin and CW Tu ldquoRaman scattering of GaP1-xNx alloysrdquo Chinese Journal of Semiconductors Vol 24 No7 (July 2003) pp 714-717

310 S Francoeur MJ Seong MC Hanna J Geisz A Mascarenhas H Xin and CW Tu ldquoOrigin of the nitrogen-induced optical transitions in GaAs1-xNxrdquo Physical Review B Vol 68 No 7 (August 2003) pp 075207-1-075207-5

311 SW Johnston RK Ahrenkiel CW Tu and YG Hong ldquoMeasurement of charge-separation potentials in GaAs1-xNxrdquo Journal of Vacuum Science amp Technology A Vol 21 No 5 (September-October 2003) pp 1765-1769

312 CW Tu ldquoElectronic materials growth A retrospective and look forwardrdquo Journal of Vacuum Science amp Technology A Vol 21 No 5 (September-October 2003) pp S160-S166

313 A Nishikawa YG Hong and CW Tu ldquoThe effect of nitrogen on self-assembled GaInNAs quantum dots grown on GaAsrdquo Physica Status Solidi B-Basic Research Vol 240 No 2 (November 2003) pp 310-313

314 YG Hong A Nishikawa and CW Tu ldquoEffect of nitrogen on the optical and transport properties of Ga048In052NyP1-y grown on GaAs(001) substratesrdquo Applied Physics Letters Vol 83 No 26 (December 2003) pp 5446-5448

315 IP Vorona NQ Thinh IA Buyanova W Chen Y Hong and CW Tu ldquoIdentification of Ga interstitials in GaAlNPrdquo Physica B-Condensed Matter Vol 340 (December 2003) pp 466-469

316 WM Chen NQ Thinh IP Vorona I Buyanova H Xin and CW Tu ldquoP-N defect in GaNP studied by optically detected magnetic resonancerdquo Physica B-Condensed Matter Vol 340 (December 2003) pp 399-402

317 A Polimeni F Masia M Felici G Baldassarri Houmlger von Houmlgersthal H Baldassarri M Bissiri A Frova M Capizzi PJ Klar W Stolz IA Buyanova WM Chen HP Xin and CW Tu ldquoHydrogen-related effects in diluted nitridesrdquoPhysica B-Condensed Matter Vol 340 (December 2003) pp 371-376

318 RJ Welty HP Xin CW Tu and P Asbeck ldquoMinority carrier transport properties of GaInNAs heterojunction bipolar transistors with 2 nitrogenrdquo Journal of Applied Physics Vol 95 No 1 (January 2004) pp 327-333

319 M Izadifard IA Buyanova WM Chen A Polimeni M Capizzi and CW Tu ldquoRole of hydrogen in improving optical quality of GaNAs alloysrdquo Physica E-Low-Dimensional Systems amp Nanostructures Vol 20 No 3-4 (January 2004) pp 313-316

320 IA Buyanova M Izadifard WM Chen H Xin and CW Tu ldquoExperimental evidence for N-induced strong coupling of host conduction band states in GaNxP1-x Insight into the dominant mechanism for giant band-gap bowingrdquo Physical Review B Vol 69 No 20 (May 2004) pp 201303-1-201303-4

321 A Nishikawa YG Hong and CW Tu ldquoTemperature dependence of optical properties of Ga03In07NxAs1-x quantum dots grown on GaAs (001)rdquo Journal of Vacuum Science amp Technology B Vol 22 No 3 (May-June 2004) pp 1515-1517

322 YG Hong A Nishikawa and CW Tu ldquoSimilarities between Ga048In052NyP1-y and Ga092In008NyAs1-y grown on GaAs (001) substratesrdquo Journal of Vacuum Science amp Technology B Vol 22 No 3 (May-June 2004) pp 1495-1498


20

323 HP Hsu YS Huang CH Wu Y Su F Juang Y Hong and CW Tu ldquoThe structural and optical characterization of a new class of dilute nitride compound semiconductors GaInNPrdquo Journal of Physics-Condensed Matter Vol 16 No 31 (August 2004) pp S3245-S3256

324 IA Buyanova WM Chen and CW Tu ldquoDefects in dilute nitridesrdquo Journal of Physics-Condensed Matter Vol 16 No 31 (August 2004) pp S3027-S3035

325 IA Buyanova M Izadifard A Kasic H Arwin W Chen H Xin Y Hong and CW Tu ldquoAnalysis of band anticrossing in GaNxP1-x alloysrdquo Physical Review B Vol 70 No 8 (August 2004) pp 085209-1-085209-8

326 NQ Thinh IP Vorona IA Buyanova WM Chen Sukit Limpijumnong SB Zhang YG Hong CW Tu A Utsumi Y Furukawa S Moon A Wakahara and H Yonezu ldquoIdentification of Ga-interstitial defects in GaNyP1-y and AlxGa1-xNyP1-yrdquo Physical Review B Vol 70 No 12 (September 2004) pp 121201-1-121201-4

327 IA Buyanova M Izadifard WM Chen HP Xin and CW Tu ldquoOrigin of bandgap bowing in GaNP alloysrdquo IEE Proceedings-Optoelectronics Vol 151 No5 (October 2004) pp 389-392

328 WM Chen IA Buyanova and CW Tu ldquoDefects in dilute nitrides significance and experimental signaturesrdquo IEE Proceedings-Optoelectronics Vol 151 No 5 (October 2004) pp 379-84

329 NQ Thinh IP Vorona M Izadifard I Buyanova W Chen Y Hong H Xin and CW Tu ldquoFormation of Ga interstitials in (AlIn)(y)Ga1-yNxP1-x alloys and their role in carrier recombinationrdquo Applied Physics Letters Vol 85 No 14 (October 2004) pp 2827-2829

330 IA Buyanova M Izadifard IG Ivanov J Birch WM Chen M Felici A Polimeni M Capizzi YG Hong HP Xin and CW Tu ldquoDirect experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties of GaNxP1-x alloys A proof for a general property of dilute nitridesrdquo Physical Review B Vol 70 No 24 (December 2004) pp 245215-1-245215-4

331 BS Ma FH Su K Ding G Li Y Zhang A Mascarenhas H Xin and CW Tu ldquoPressure behavior of the alloy band edge and nitrogen-related centers in GaAs0999N0001rdquo Physical Review B Vol 71 No 4 (January 2005) pp 045213-1-045213-9

332 M Felici A Polimeni A Miriametro M Capizzi H Xin and CW Tu ldquoFree carrier andor exciton trapping by nitrogen pairs in dilute GaP1-xNxrdquo Physical Review B Vol 71 No 4 (January 2005) pp 045209-1-045209-6

333 JS Hwang KI Lin HC Lin H Hsu K Chen Y Lu Y Hong and CW Tu ldquoStudies of band alignment and two-dimensional electron gas in InGaPNGaAs heterostructuresrdquo Applied Physics Letters Vol 86 No 6 (February 2005) pp 061103-1-061103-3

334 F Altomare AM Chang MR Melloch Y Hong and CW Tu ldquoUltranarrow AuPd and Al wiresrdquo Applied Physics Letters Vol 86 No 17 (April 2005) pp 172501-1-172501-3

335 A Nishikawa R Katayama K Onabe Y Hong and CW Tu ldquoExcitation power dependent photoluminescence of In07Ga03As1-xNx quantum dots grown on GaAs (001)rdquo Journal of Crystal GrowthVol 278 No 1-4 (May 2005) pp 244-248

336 VA Odnoblyudov and CW Tu ldquoRoom-temperature yellow-amber emission from InGaP quantum wells grown on an InGaP metamorphic buffer layer on GaP(100) substratesrdquo Journal of Crystal Growth Vol 279 No 1-2 (May 2005) pp 20-25

337 KI Lin JY Lee TS Wang SH Hsu JS Hwang YG Hong and CW Tu ldquoEffects of weak ordering of InGaPNrdquo Applied Physics Letters Vol 86 No 21 (May 2005) pp 211914-1-211914-3

338 IP Vorona T Mchedlidze M Izadifard I Buyanova W Chen Y Hong H Xin and CW Tu ldquoMagnetic resonance signatures of grown-in defects in GaInNP alloys grown on a GaAs substraterdquo Applied Physics Letters Vol 86 No 22 (May 2005) pp 222110-1-222110-3


21

339 VA Odnoblyudov and CW Tu ldquoGas-source molecular-beam epitaxial growth of Ga(In)NP on GaP(100) substrates for yellow-amber light-emitting devicesrdquo Journal of Vacuum Science amp Technology B Vol 23 No3 (May-June 2005) pp 1317-1319

340 M Izadifard T Mtchedlidze I Vorona W Chen I Buyanova Y Hong and CW Tu ldquoBand alignment in GaInNPGaAs heterostructures grown by gas-source molecular-beam epitaxyrdquoApplied Physics Letters Vol 86 No 26 (June 2005) pp 261904-1-261904-3

341 CJ Pan CW Tu JJ Song G Cantwell C Lee B Pong and C Chi ldquoPhotoluminescence of ZnO films grown by plasma-assisted molecular beam epitaxyrdquo Journal of Crystal Growth Vol 282 No 1-2 (August 2005) pp 112-116

342 WM Chen IA Buyanova CW Tu and H Yonezu ldquoDefects in dilute nitridesrdquo Acta Physica Polonica A Vol 108 No 4 (October 2005) pp 571-579

343 YJ Lu YL Gao JS Zheng Y Zhang A Mascarenhas H Xin and CW Tu ldquoDirect observation of NN pairs transfer in GaP1-xNx (x=012)rdquo Chinese Physics Letters Vol 22 No 11 (November 2005) pp 2957-2959

344 M Izadifard JP Bergman WM Chen I Buyanova Y Hong and CW Tu ldquoRadiative recombination of GaInNP alloys lattice matched to GaAsrdquo Applied Physics LettersVol 88 No 1 (January 2006) pp 011919-1-011919-3

345 IA Buyanova M Izadifard WM Chen Y Hong and CW Tu ldquoModeling of band gap properties of GaInNP alloys lattice matched to GaAsrdquo Applied Physics Letters Vol 88 No 3 (January 2006) pp 031907-1-031907-3

346 IA Buyanova M Izadifard WM Chen H Xin and CW Tu ldquoOn a possible origin of the 287 eV optical transition in GaNPrdquo Journal of PhysicsmdashCondensed Matter Vol 18 No 2 (January 2006) pp 449-457

347 V Odnoblyudov and CW Tu ldquoGrowth and characterization of AlGaNP on GaP(100) substratesrdquo Applied Physics Letters Vol 88 No 7 (February 2006) pp 071907-1-071907-3

348 CW Tu WM Chen IA Buyanova and J Hwang ldquoMaterial properties of dilute nitrides Ga(In)NAs and Ga(In)NPrdquoJournal of Crystal Growth Vol 288 No 1 (February 2006) pp 7-11

349 CJ Pan BJ Pong BW Chou GC Chi and CW Tu ldquoPhotoluminescence of nitrogen-doped ZnOrdquo Physica Status Solidi C Vol 3 No 3 (February 2006) pp 611-613

350 PH Tan XD Luo WK Ge ZY Xu Y Zhang A Mascarenhas HP Xin and CW Tu ldquoResonant Raman scattering and photoluminescence emissions from above bandgap levels in dilute GaAsN alloysrdquo Chinese Journal of Semiconductors Vol 27 No 3 (March 2006) pp 397-402

351 M Izadifard JP Bergman WM Chen I Buyanova Y Hong and CW Tu ldquoPhotoluminescence upconversion in GaInNPGaAs heterostructures grown by gas source molecular beam epitaxyrdquo Journal of Applied Physics Vol 99 No 7 (April 2006) pp 073515-1-073515-5

352 IA Buyanova M Izadifard T Seppanen J Birch W Chen S Pearton A Polimeni M Capizzi M Brandt C Bihler Y Hong and CW Tu ldquoUnusual effects of hydrogen on electronic and lattice properties of GaNP alloysrdquo Physica B-Condensed Matter Vol 376 (April 2006) pp 568-570

353 IP Vorona T Mchedlidze M Izadifard I Buyanova W Chen Y Hong and CW Tu ldquoSignatures of grown-in defects in GaInNP alloys grown on a GaAs substrate from magnetic resonance studiesrdquo Physica B-Condensed Matter Vol 376 (April 2006) pp 571-574

354 WM Chen IA Buyanova Tu CW and H Yonezu ldquoPoint defects in dilute nitride III-N-As and III-N-Prdquo Physica B-Condensed Matter Vol 376 (April 2006) pp 545-551

355 WJ Wang XD Yang BS Ma Z Sun F Su K Ding Z Xu G Li Y Zhang A Mascarenhas HP Xin and C W Tu ldquoLifetime study of N impurity states in GaAs1-xNx (x=01) under hydrostatic pressurerdquo Applied Physics Letters Vol 88 No 20 (May 2006) pp 201917-1-201917-3


22

356 PH Tan XD Luo ZY Xu Y Zhang A Mascarenhas H Xin CW Tu and W Ge ldquoPhotoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1-xNx alloys A microphotoluminescence studyrdquo Physical Review B Vol 73 No 20 (May 2006) pp 205205-1-205205-5

357 F Altomare AM Chang MR Melloch Y Hong CW Tu ldquoEvidence for macroscopic quantum tunneling of phase slips in long one-dimensional superconducting Al wiresrdquo Physical Review Letters Vol 97 Article No 017001 (July 2006) pp 017001-1 ndash 017001-4

358 PH Tan ZY Xu XD Luo WK Ge Y Zhang A Mascarenhas HP Xin CW Tu ldquoResonant Raman scattering with the E+ band in a dilute GaAs1-xNx alloy (x=01)rdquo Applied Physics Letters Vol 89 Article No 101912 (September 2006) 101912-1 ndash 101912-3

359 VA Odnoblyudov and CW Tu ldquoOptical properties of InGaNP quantum wells grown on GaP(100)

substrates by gas-source molecular beam epitaxyrdquo Applied Physics Letters Vol 89 Article No 111922 (September 2006) pp 111922-1 ndash 111922-3

360 VA Odnoblyudov and CW Tu ldquoAmber GaNP-based light-emitting diodes directly grown on GaP(100)

substratesrdquo Journal of Vacuum Science amp Technology B Vol 24 No 5 (September-October 2006) pp 2202-2204

361 SV Dudly A Zunger M Felici A Polimeni M Capizzi HP Xin C W Tu ldquoNitrogen-induced perturbation of the valence band states in GaP1-xNx alloysrdquo Physical Review B Vol 74 No 15 Article No 155303 (October 2006) pp 155303-1 ndash 155303-6

362 VA Odnoblyudov and CW Tu ldquoGrowth and fabrication of InGaNP-based yellow-red light emitting diodesrdquo Applied Physics Letters Vol 89 No 19 Article 191107 (November 2006) pp 191107-1 ndash 191107-3

363 IA Buyanova WM Chen M Izadifard SJ Pearton C Bihler MS Brandt YG Hong CW Tu

ldquoHydrogen passivation of nitrogen in GaNAs and GaNP alloys How many H atoms are required for each N atomrdquo Applied Physics Letters Vol 90 Nov 2 Article 021920 (January 2007) pp 0210920-1 ndash 021920-3

364 PH Tan ZY Xu XD Luo WK Ge Y Zhang A Mascarenhas HP Xin CW Tu ldquoUnusual carrier

thermalization in a dilute GaAs1-xNx alloyrdquo Applied Physics Letters Vol 90 No 6 Article 061905 (2007) pp 061905-1 ndash 061905-3

365 S Suraprapapich YM Shen VA Odnoblyudov VA Odnoblyudov Y Fainman S Panyakeow CW

Tu ldquoSelf-assembled lateral Bi-quantum-dot molecule formation by gas-source molecular beam epitaxyrdquo Journal of Crystal Growth Vol 301 (April 2007) pp 735-739

366 S Suraprapapich S Panyakeow and CW Tu ldquoEffect of arsenic species on the formation of (Ga)InAs

nanostructures after partial capping and regrowthrdquo Applied Physics Letters Vol 90 No 18 Article No 183112 (April 2007) 183112-1 ndash 183112-3

367 M Kaneko T Hashizume VA Odnoblyudov and CW Tu ldquoElectrical and deep-level characterization of

GaP1-xNx grown by gas-source molecular beam epitaxyrdquo Journal of Applied Physics Vol 101 No 10 Article No 103703 (15 May 2007) pp 103707-1 ndash 103707-5

368 CJ Pan CW Tu CJ Tun CC Lee GC Chi ldquoStructural and optical properties of ZnO epilayers grown

by plasma-assisted molecular beam epitaxy on GaNsapphire (0001)rdquo Journal of Crystal Growth Vol 305 No 1 (July 2007) pp 133-136

369 XJ Wang IA Buyanova WM Chen CJ Pan CW Tu ldquoOptical characterization studies of grown-in

defects in ZnO epilayers grown by molecular beam epitaxyrdquo Physica B Vol 401-402 (December 2007) pp 413-416


23

370 S Kleekalai K Colon M Stavola WB Fowler KR Martin A Polimeni M Capizzi YG Hong HP

Xin CW Tu ldquoVibrational spectroscopy of hydrogenated GaP1-yNyrdquo Physica B Vol 401-402 (December 2007) pp 347-350

371 J Chamings S Ahmed SJ Sweeney VA Odnoblyudov CW Tu ldquoPhysical properties and efficiency of

GaNP light emitting diodesrdquo Applied Physics Letters Vol 92 No 2 Article No 021101 (January 2008) pp 021101-1 ndash 021101-3

372 XJ Wang IA Buyanova WM Chen CJ Pan CW Tu ldquoEffects of stoichiometry on defect formation in

ZnO epilayers grown by molecular-beam epitaxy An optically detected magnetic resonance studyrdquo Journal of Applied Physics Vol 103 No 2 Article No 023712 (January 2008) pp 023712-1 ndash 023712-4

373 IA Buyanova WM Chen and CW Tu ldquoOptical and electronic properties of GaInNP alloys - a new

material system for lattice matching to GaAsrdquo Physica Status Solidi A Vol 205 No 1 (January 2008) pp 101-106

374 S Kleekajai F Jiang K Colon M Stavola WB Fowler KR Martin A Polimeni M Capizzi YG

Hong HP Xin CW Tu G Bais S Rubini F Martelli ldquoVibrational properties of the H-N-H complex in dilute III-N-V alloys Infrared spectroscopy and density functional theoryrdquo Physical Review B Vol 77 No 8 Article No 085213 (February 2008) pp 085213-1 ndash 085213-9

375 XJ Wang IA Buyanova F Zhao D Lagarde A Balocchi X Marie CW Tu JC Harmand WM

Chen ldquoRoom-temperature defect-engineered spin filter based on a non-magnetic semiconductorrdquo Nature Materials Vol 8 Issue 3 (February 2009) pp 198-201

376 J Chamings S Ahmed A Adams S Sweeney VA Odnoblyudov CW Tu B Kunert W Stolz ldquoBand

anti-crossing and carrier recombination in dilute nitride phosphide based lasers and light emitting diodesrdquo Physica Status Solidi B Vol 246 Issue 3 (March 2009) pp 527-531

377 S Suraprapapich YM Shen Y Fainman Y Horikoshi S Panyakeow CW Tu ldquoThe effects of rapid

thermal annealing on doubled quantum dots grown by molecular beam epitaxyrdquo Journal of Crystal Growth Vol 311 Issue 7 (March 2009) pp 1791-1794

378 IA Buyanova XJ Wang WM Wang CW Tu WM Chen ldquoEffects of Ga doping on optical and

structural properties of ZnO epilayersrdquo Superlattices and Microstructures Vol 45 Issue 4-5 (April-May 2009) pp 413-420

379 HP Hsu YN Huang YS Huang P Sitarek KK Tiong CW Tu ldquoEvidence of type-II band alignment

at the ordered GaInNP to GaAs heterointerfacerdquo Physica Status Solidi A ndash Applications and Materials ScienceVol 206 Issue 5 (May 2009) pp 803-807

380 J Beyer IA Buyanova S Suraprapapich CW Tu WM Chen ldquoSpin injection in lateral InAs quantum

dot structures by optical orientation spectroscopyrdquo Nanotechnology Vol 20 Issue 37 Article 375401 (September 2009) 5 pages

381 XJ Wang Y Puttisong CW Tu AJ Ptak VK Kalevich AY Egorov L Geelhaar H Riechert WM

Chen IA Buyanova ldquoDominant recombination centers in Ga(In)NAs alloys Ga interstitialsrdquo Applied Physics Letters Vol 95 Issue 95 Article 241904 (December 2009) pp 241904-1 ndash 241904-3

382 IA Buyanova A Murayama T Furuta Y Oka DP Norton SJ Pearton A Osinsky JW Dong CW

Tu WM Chen ldquoSpin Dynamics in ZnO-Based Materialsrdquo Journal of Superconductivity and Novel Magnetism Special Issue Vol 23 Issue 1 (January 2010) pp 161-165


24

383 Y Puttisong XJ Wang IA Buyanova H Carrere F Zhao A Balocchi X Marie CW Tu WM Chen ldquoElectron spin filtering by thin GaNAsGaAs multiquantum wellsrdquo Applied Physics Letters Vol 96 Issue 5 Article 052104 (February 2010) pp 052104-1 ndash 052104-3

384 J-W Kang M-S Oh Y-S Choi C-Y Cho T-Y Park CW Tu and S-J Park ldquoImproved Light Extraction of GaN-Based Green Light-Emitting Diodes with an Antireflection Layer of ZnO Nanorod Arraysrdquo Electrochemical and Solid State Letters Vol 14 (2011) pp H120-H123

385 Y Puttisong XJ Wang IA Buyanova CW Tu L Geelhaar R Riechert and WM Chen ldquoRoom-temperature spin injection and spin loss across a GaNAsGaAs interface ldquo Applied Physics Letters Vol 98 Article Number 012112 (January 2011)

386 D Dagnelund XJ Wang CW Tu A Polimeni M Capizzi WM Chen and IA Buyanova ldquoEffect of postgrowth hydrogen treatment on defects in GaNP ldquo Applied Physics Letters Vol 98 Article Number 141920 (April 2011)

387 J Beyer IA Buyanova S Suraprapapich CW Tu and WM Chen ldquoStrong room-temperature optical and spin polarization in InAsGaAs quantum dot structures ldquo Applied Physics Letters Vol 98 Article Number 203110 (May 2011)

388 P Pichanusakorn YJ Kuang CJ Patel CW Tu and PR Bandaru ldquoThe influence of dopant type and carrier concentration on the effective mass and Seebeck coefficient of GaNxAs1-x thin films ldquo Applied Physics Letters Vol 99 Article Number 072114 (August 2011)

II Books and Book Chapters

1 R Dingle MD Feuer and CW Tu The selectively doped heterostructure transistors materials devices and circuits Chapter 6 in VLSI Electronics Microstructure Science GaAs Microelectronics NG Einspruch and WR Wisseman Eds Orlando Academic Press (Vol 11) 1985 pp 215-264

2 CW Tu RH Hendel and R Dingle Molecular beam epitaxy and the technology of selectively doped

heterostructure transistors Chapter 4 in GaAs Technology DK Ferry HW Sams amp Co Eds Indianopolis Sams amp Co 1985 pp 107-153

3 III-V Heterostructures for ElectronicPhotonic Devices Materials Research Society Symposium

Proceedings Vol 145 CW Tu VD Mattera and AC Gossard Eds Pittsburgh Materials Research Society 1989 pp 1-513

4 Semiconductor Heterostructures for Electronic and Photonic Applications Vol 281 CW Tu DL

Houghton and RT Tung Eds Pittsburgh Materials Research Society 1993 pp 1-850 5 Compound Semiconductor Epitaxy Vol 340 CW Tu LA Kolodziejski and VR McCrary Eds

Pittsburgh Materials Research Society 1994 pp 1-609

6 CW Tu Molecular Beam Epitaxy Chapter 30 in Handbook of Surface Imaging and Visualization AT Hubbard Eds Boca Raton CRC Press 1995 pp 433-448

7 CW Tu Molecular beam epitaxy using gaseous sources Chapter 3 in Integrated Optoelectronics RF

Lehny J Crow and M Dagenais Eds New York Academic Press 1995 pp 83-120)

8 CW Tu ldquoGrowth characterization and bandgap engineering of dilute nitridesrdquo Chapter 10 in Physics and Application of Dilute Nitrides Irinia Buyanova and Weimin Chen Eds New York Taylor and Francis 2004 pp 281-308


25

III Conference Proceedings

1 SJ Allen F DeRosa GJ Dolan and CW Tu Collective resonances in the laterally confined 2D electron gas Proceedings of the 17th International Conference on the Physics of Semiconductors (JD Chadi and WA Harrison eds Springer-Verlag New York) San Francisco CA August 6-10 1984 pp 313-316

2 SS Pei NJ Shah RH Hendel CW Tu and R Dingle Ultra high speed integrated circuits with selectively doped heterostructure transistors IEEE GaAs IC Symposium Technical Digest Boston MA October 23-25 1984 pp 129-134

3 JH Abeles CW Tu SA Schwarz SH Wemple and TM Brennan Phase nonlinearity of buried-layer GaAs MESFETs International Electron Devices Technical Digest Meeting San Francisco CA December 9-12 1984 pp 178-181

4 RH Hendel SS Pei CW Tu BJ Roman NJ Shah and R Dingle Realization of sub-10 picosecond switching times in selectively doped (AlGa)AsGaAs heterostructure transistors International Electron Devices Technical Digest Meeting San Francisco CA December 9-12 1984 pp 857-858

5 AR Schlier SS Pei NJ Shah CW Tu and GE Nahoney A high-speed 4x4 bit parallel multiplier using selectively doped heterostructure transistors GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Technical Digest Monterey CA November 12-14 1985 pp 91-93

6 J Chevallier WC Dautremont-Smith SJ Pearton CW Tu and A Jalil ldquoDonor neutralization in n type GaAs by atomic hydrogenrdquo 3eme Symposium International sur la Gravure Seche et le Depot Plasma en Microelectronique (3rd International Symposium on Dry Etching and Plasma Deposition in Microelectronics) Cachan France November 26-29 1985 pp 161-166

7 BA Wilson P Dawson CW Tu and RC Miller Novel measurement of the band discontinuities in (AlGa)As heterojunctions Layered Structures and Epitaxy Symposium Boston MA December 2-4 1985 pp 307-312

8 L Schultheis J Kuhl A Honold and CW Tu Picosecond relaxation of nonthermal Wannier excitons in GaAs Proceedings of the Fifth OSA Topical Meeting (in Ultrafast Phenomena V GR Fleming and AE Siegman eds Springer-Verlag Berlin) Snowmass CO June 16-19 1986 pp 201-202

9 HJ Polland L Schultheis J Kuhl EO Gobel and CW Tu Broad tuning of the photoluminescence energy and lifetime by the quantum-confined Stark effect Proceedings of the Fifth OSA Topical Meeting (in Ultrafast Phenomena V GR Fleming and AE Siegman eds Springer-Verlag Berlin) Snowmass CO June 16-19 1986 pp 234-237

10 GS Boebinger DC Tsui HL Stormer JCM Hwang AY Cho and CW Tu ldquoActivation energies and localization in the fractional quantum Hall effectrdquo 18th International Conference on the Physics of Semiconductors (Vol 1) Stockholm Sweden August 11-15 1986 pp 409-412

11 JJ Song YS Yoon PS Jung A Fedotowsky JN Schulman and CW Tu RF Kopf D Huang and H Morkoc ldquoExperimental and theoretical studies of quantized electronic states above the energy barrier of GaAsAlxGa1-xAs superlatticesrdquo 18th International Conference on the Physics of Semiconductors (Vol 1) Stockholm Sweden August 11-15 1986 pp 699-702

12 L Schultheis J Kuhl A Honold and CW Tu Ultrafast relaxation of nonthermal excitons in GaAs 18th International Conference on the Physics of Semiconductors Stockholm Sweden August 11-15 1986 pp 1397-1404

13 BA Wilson RC Miller SK Sputz TD Harris R Sauer MG Lamont CW Tu and RF Kopf Photoluminescence studies of single GaAsAl03Ga07As quantum wells with extended monolayer-flat regions Proceedings of the 13th International Symposium on Gallium Arsenide and Related Compounds Las Vegas NV September 28 ndash October 1 1986 pp 215-220

14 SJ Pearton WC Dautremont-Smith CW Tu JC Nabity V Swaminathan M Stavola and J Chevallier Hydrogen passivation of shallow level impurities and deep level defects in GaAs Proceedings


26

of the 13th International Symposium on Gallium Arsenide and Related Compounds Las Vegas NV September 28 ndash October 1 1986 pp 289-294

15 A Honold L Schultheis J Kuhl and CW Tu Phase relaxation of two-dimensional excitons in a GaAs single quantum well Proceedings of the 6th International Conference on Ultrafast Phenomena (in Ultrafast Phenomenon VI T Yajima K Yoshihara CB Harris and S Shionoya Eds Springer-Verlag Berlin) Mount Hiei Kyoto Japan July 12-15 1988 pp 307-310

16 WG Bi CW Tu D Mathes and R Hull ldquoA study of mixed group-V nitrides grown by gas-source molecular beam epitaxy using a nitrogen radical beam sourcerdquo III-V Nitrides Symposium (Materials Research Society Symposium Proceedings) Boston MA December 2-6 1996 pp 203-208

17 L Schultheis J Kuhl A Honold and CW Tu Optical dephasing of Wannier excitons in GaAs Proceedings of the International Meeting on Excitons in Confined Systems (R DelSole A DAndrea and A Lapiccirella eds Springer-Verlag Berlin) Rome Italy April 13-16 1987 pp 50-58

18 L Schultheis K Kohler and CW Tu Wannier excitons at GaAs surfaces and in thin GaAs layers Proceedings of the International Meeting on Excitons in Confined Systems (R DelSole A DAndrea and A Lapiccirella eds Springer-Verlag Berlin) Rome Italy April 13-16 1987 pp 110-118

19 CW Tu and NY Li ldquoIn situ etching and chemical beam epitaxy of carbon-doped Alx Ga1-xAs using tris-dimethylaminoarsenicrdquo Proceedings of the 26th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVI) (Electrochemical Society) Montreal Quebec Canada May 4-9 1997 pp10-18

20 VM Donnelly JC Beggy VR McCrary TD Harris MG Lamont FA Baiocchi and RC Farrow ldquoEffects of excimer laser irradiation on MBE and MO-MBE growth of (Al)GaAs on GaAs and (CaSr)F2GaAs substratesrdquo Laser and Particle-Beam Chemical Processing for Microelectronics SymposiumBoston MA December 1-3 1987 pp 291-299

21 R Hull JE Turner A Fischer-Colbrie AE White KT Short SJ Pearton and CW Tu Semiconductor superlattices order and disorder Materials Modification and Growth Using Ion Beams Symposium Anaheim CA April 21-23 1987 pp 153-169

22 CW Tu JC Beggy FA Baiocchi SM Abys SJ Pearton SJ Hsieh RF Kopf R Caruso and AS Jordan ldquoLattice-matched GaAsCa045Sr055F2Ge(100) heterostructures grown by molecular beam epitaxyrdquo Conference Information Heteroepitaxy on Silicon II Symposium Anaheim CA April 21-23 1987 pp 359-364

23 J Wang JW Steeds and CW Tu The investigation of impurity distributions around an oval defect in MBE AlGaAsGaAs single quantum wells by TEM and TEM-CL Proceedings of the 3rd International Conference on Shallow Impurities in Semiconductors Linkoping Sweden August 10-12 1988 pp 45-50

24 D Heiman BB Goldberg A Pinczuk CW Tu JH English AC Gossard M Santos and M Shayegan Spectral blue-shifts in optical absorption and emission of the 2D electron system in the magnetic quantum limit Proceedings of the International Conference on High Magnetic Fields in Semiconductor Physics II Transport and Optics Wurzburg West Germany August 8-12 1988 pp 278-288

25 EF Schubert JE Cunningham TH Chiu JB Star B Tell and CW Tu Spatial localization and diffusion of Si in d-doped GaAs and AlxGa1-xAs and its application to electron-mobility optimization in selectively doped heterostructures Proceedings of the 15th International Symposium on Gallium Arsenide and Related Compounds Atlanta GA September 11-14 1988 pp 33-40

26 S Tae-Yeon B In-Tae Y Zhao and CW Tu ldquoStructural study of GaN(AsP) layers grown on (0001) GaN by gas source molecular beam epitaxyrdquo GaN and Related Alloys Symposium (Materials Research Society) Boston MA October 30 - November 4 1998 pp G3116-G3116

27 J Kuhl A Honold L Schultheis and CW Tu Optical dephasing and orientational relaxation of excitons in GaAs single quantum well Proceedings of the 19th International Conference on the Physics of Semiconductors Polish Academy of Sciences 1988 pp 407-410


27

28 BB Goldberg D Heiman A Pinczuk CW Tu JH English and AC Gossard Optical studies of the 2D electron gas in GaAs in the fractional quantum Hall regime Proceedings of the 19th International Conference on the Physics of Semiconductors Polish Academy of Sciences 1988 pp 135-138

29 JW Steeds SJ Bailey JN Wang and CW Tu ldquoTEM-cathodoluminescence study of single and multiple quantum wells of MBE grown GaAsAlGaAsrdquo Evaluation of Advanced Semiconductor Materials by Electron Microscopy Proceedings of a NATO Advanced Research Workshop Bristol UK September 12-17 1988 pp 127-141

30 VM Donnelly JA McCaulley VR McCrary and CW Tu Selected area growth of GaAs by laser induced pyrolysis of adsorbed Ga-alkyls Laser and Particle-Beam Chemical Processes on Surfaces Symposium Materials Research Society Boston MA November 29 ndash December 2 1988 pp 147-158

31 W Xia S C Lin S A Pappert C A Hewett M Fernandes T T Vu C Cozzolino J Zhang C W Tu P K L Yu and S S Lau Superlattice Waveguides by Ion Mixing (presented at The Electrochemical Society Meeting) Proceedings of the Symposium on Ion Implantation and Dielectics for Elemental and Compound Semiconductors Vol 90-13 1990 Hollywood FL October 15-20 1989 pp 100-109

32 K Leo J Shah TC Damen JE Cunningham CW Tu and JE Henry ldquoHole tunneling in GaAsAlGaAs heterostructures coherent vs incoherent resonant Proceedings of the SPIE - The International Society for Optical Engineering (Vol 1283) San Diego CA March 18-19 1990 pp 35-44

33 JM Jacob JF Zhou SJ Hwang PS Jung JJ Song YC Chang and CW Tu Subband-dispersion and subband-mixing effects on excitonic spectra in thin barrier superlatticesrdquo Proceedings of the SPIE - The International Society for Optical Engineering (Vol 1283) San Diego CA March 18-19 1990 pp 344-352

34 BW Liang K Ha J Zhang TP Chin and CW Tu Growth of InAs on GaAs(001) by migration enhanced epitaxy Proceedings of the SPIE - The International Society for Optical Engineering (Vol 1285) San Diego CA March 20-21 1990 pp 116-121

35 BW Liang LY Wang and CW Tu A kinetic model for metal-organic molecular-beam epitaxy of InAs Proceedings State of the Art Program on Compound Semiconductors Electrochemical Society Proceedings Vol 90-15 1990 pp 107-111

36 TP Chin BW Liang HQ Hou and CW Tu Reflection high-energy-electron diffraction study of InP and InAs (100) in gas-source molecular beam epitaxy Long-Wavelength Semiconductor Devices Materials Research Society (Vol 216) Boston MA November 26-29 1990 pp 517-522

37 CW Tu BW Liang and VM Donnelly Metalorganic molecular-beam epitaxy growth kinetics and selective-area epitaxy Proceedings of Conference on Frontiers of Materials Research Electronic and Optical Materials M Kong and L Huang eds North Holland Amsterdam 1991 pp 511-519

38 BW Liang HQ Hou and CW Tu Study of As and P incorporation behavior in GaAsP by gas-source molecular beam epitaxy Atomic Layer Growth and Processing Symposium Materials Research Society (Vol 222) Anaheim CA April 29 ndash May 1 1991 pp 145-150

39 HQ Hou TP Chin BW Liang and CW Tu Modulator structure using In(AsP)InP strained multiple quantum wells grown by gas-source MBE Materials for Optical Information Processing Symposium Materials Research Society (Vol 228) May 1-3 1991 pp 231-236

40 CW Tu BW Liang J Moore HQ Hou TP Chin and MC Ho Comparison of various versions of molecular beam epitaxy for large-area deposition of III-V device structures Proceedings of State of the Art Program on Compound Semiconductors and Symposium on Large AreaScale Epitaxy for III-V Device Fabrication Electrochemical Society DN Buckley and AT Macrander Eds Elctrochemical Society Proceedings Vol 91-13 1991 pp 13-22

41 BW Liang Y He and CW Tu Low temperature growth and characterization of InP grown by gas-source molecular beam epitaxy Low Temperature (LT) GaAs and Related Materials Symposium Matererials Research Society (Vol 240) Boston MA December 4-6 1991 pp 283-288


28

42 CW Tu Carbon-doped p-type In053Ga047As and its application to InPIn053Ga047As heterojunction bipolar transistors Proceedings of the 5th International Conference on Indium Phosphide and Related Materials Paris France April 19-22 1993 pp 695-698

43 WM Chen P Dreszer R Leon ER Weber BW Liang and CW Tu Electronic structures of PIn antisite defects in InP 17th International Conference on Defects in Semiconductors Materials Science Forum (Vol 143-147 Part 1) Gmunden Austria July 18-23 1993 pp 211-215

44 P Dreszer WM Chen D Wasik W Walukiewica BW Liang CW Tu and E Weber Properties of resonant localized donor level in low-temperature-grown InP 17th International Conference on Defects in Semiconductors Materials Science Forum (Vol 143-147 Part 2) Gmunden Austria July 18 ndash 23 1993 pp 1081-1085

45 PM Asbeck CW Tu MC Ho SL Fu RC Gee and TP Chin Materials and structures for advanced III-V HBTs Semiconductor Heterostructures for Photonic and Electronic Applications Symposium Materials Research Society (Vol 281) Boston MA November 30 ndash December 4 1993 pp 241-250

46 TP Chin JCP Chang KL Kavanagh and CW Tu Growth and characterization of InxGa1-xP (x lt 038) on GaP(100) with a linearly graded buffer layer by gas-source molecular beam epitaxy Semiconductor Heterostructures for Photonic and Electronic Applications2 Symposium Materials Research Society (Vol 281) Boston MA November 30 ndash December 4 1993 pp 227-232

47 CW Tu and HQ Hou InAsPInP strained quantum wells grown by gas-source molecular beam epitaxy on InP (100) and (111)B substrates Proceedings of the SPIE - The International Society for Optical Engineering (Vol 2140) Los Angeles CA January 26-27 1994 pp 150-157

48 CW Tu TP Chin JCP Chang KL Kavanagh and N Ostuka InGaAsInP and InAsPInP quantum wells on GaAs(100) with graded InGaAs or InGaP buffer layers grown by gas-source molecular beam epitaxy Proceedings of the 6th International Conference on Indium Phosphide and Related Materials Santa Barbara CA March 27-31 1994 pp 543-546

49 SCH Hung HK Dong and CW Tu Non-contact temperature measurement with infrared interferometry Compound Semiconductor Epitaxy Symposium Materials Research Society San Francisco CA April 4-7 1994 pp 35-40

50 HK Dong NY Li CW Tu M Geva and WC Mitchel Chemical beam epitaxy (CBE) and laser-enhanced CBE of GaAs using tris-dimethylaminoarsenic Compound Semiconductor Epitaxy Symposium Materials Research Society San Francisco CA April 4-7 1994 pp 173-180

51 HK Dong SCH Hung and CW Tu Reflection high-energy electron diffraction study of arsenic incorporation in metalorganic molecular beam epitaxy of GaAs Compound Semiconductor Epitaxy Symposium Materials Research Society San Francisco CA April 4-7 1994 pp 193-198

52 CW Tu and BW Liang ldquoGroup V Composition control for InGaAsP grown by gas-source molecular beam epitaxyrdquo Proceedings of the Electrochemical Sociaety May 1994

53 S Wu WG Bi RP Espindola MK Udo CW Tu and ST Ho Fabrication of AlxGa1-xP waveguides with unusually smooth side walls for nonlinear optical applications CLEO 1994 Summaries of Papers Presented at the Conference on Lasers and Electro-Optics Technical Digest Series (Conference Edition Vol8) Anaheim CA May 8-13 1994 pp 335-336

54 HK Dong NY Li and CW Tu Chemical beam epitaxy of InGaAsGaAs multiple quantum wells using cracked or uncracked tris-dimethylaminoarsenic Proceedings of the 21st International Symposium on Compound Semiconductors San Diego CA September 18-22 1994 pp 69-74

55 CH Yan and CW Tu Strain compensation in InGaPInGaAsInGaP single quantum wells grown by gas-source molecular beam epitaxy Proceedings of the 21st International Symposium on Compound Semiconductors San Diego CA September 18-22 1994 pp 161-166

56 HK Dong NY Li and CW Tu ldquoLaser-modified chemical beam epitaxy of InGaAsGaAs multiple quantum wells using tris-dimethylaminoarsenicrdquo Beam-Solid Interactions for Materials Synthesis and


29

Characterization Symposium Materials Research Society Boston MA November 28 ndash December 2 1994 pp 597-602

57 WG Bi and CW Tu A new type of graded buffer layer for gas-source molecular beam epitaxial growth of highly strained InxGa1-xPGaP multiple quantum wells on GaP Strained Layer Epitaxy - Materials Processing and Device Applications Materials Research Society San Francisco CA April 17-20 1995 pp 67-72

58 DY Chu XZ Wang WG Bi RP Espindola SL Wu BW Wessels CW Tu and ST Ho Enhanced photoluminescence from erbium-doped GaP microdisk resonator Thin Films for Integrated Optics Applications Materials Research Society San Francisco CA April 17-20 1995 pp 229-233

59 Y Makita T Iida T Shima S Kimura A Obara K Harada CW Tu S Uekusa T Matsumori K Kudo and K Tanaka Effects of carbon-ion irradiation energies on the molecular beam epitaxy of GaAs and InGaAsrdquo Film Synthesis and Growth Using Energetic Beams Materials Research Society San Francisco CA April 17-20 1995 pp 241-252

60 XB Mei and CW Tu Strain compensation in InAsPGaInP multiple quantum wells for 13 microm wavelength Strained Layer Epitaxy - Materials Processing and Device Applications Materials Research Society San Francisco CA April 17-20 1995 pp 291-296

61 QZ Liu XB Mei LS Yu CW Tu and SS Lau Photoelastic waveguides using strain-compensated InAsPInGaP multi-quantum-wells Strained Layer Epitaxy - Materials Processing and Device Applications Materials Research Society San Francisco CA April 17-20 1995 pp 303-308

62 HK Dong NY Li and CW Tu ldquoEffects of laser irradiation on growth and doping characteristics of GaAs in chemical beam epitaxyrdquo Film Synthesis and Growth Using Energetic Beam Symposium Materials Research Society San Francisco CA April 17-20 1995 pp 373-378

63 WSC Chang KK Loi I Sakamoto HH Liao XB Mei PM Asbeck CW Tu and PKL Yu High efficiency 13 microm InAsPGaInP MQW electroabsorption waveguide modulators for microwave fiber optic links Proceedings of the DoD Photonics Conference McLean VA March 26-28 1996 pp 273-274

64 WG Bi XB Mei KL Kavanagh and CW Tu A study of low-temperature grown GaP by gas-source molecular beam epitaxy Conference on Compound Semiconductor Electronics and Photonics Materials Research Society San Francisco CA April 8-10 1996 pp 293-298

65 WM Chen IA Buyanova A Buyanova WG Bi and CW Tu ldquoIntrinsic n-type modulation doping in InP-based heterostructuresrdquo Conference on Compound Semiconductor Electronics and Photonics Materials Research Society San Francisco CA April 8-10 1996 pp 21-26

66 NY Li and CW Tu ldquoSelective-area epitaxy and in-situ etching of GaAs using tris-dimethylaminoarsenic by chemical beam epitaxyrdquo Conference on Compound Semiconductor Electronics and Photonics Materials Research Society San Francisco CA April 8-10 1996 pp 15-20

67 NY Li DH Tomich WS Wong JS Solomon and CW Tu ldquoChemical beam epitaxy of GaNxP1-x using a N radical beam sourcerdquo III-Nitride SiC and Diamond Materials for Electronic Device Symposium Materials Research Society San Francisco CA April 8-12 1996 pp 317-322

68 HH Liao XB Mei KK Loi CW Tu WSC Chang and PM Asbeck ldquoDesign of millimeter wave optical modulators with monolithically integrated narrow band impedance matching circuits for 13 mm photonic linksrdquo Proceedings of the SPIE - The International Society for Optical Engineering (Vol 2844) Denver CO August 7-8 1996 pp 97-107

69 KK Loi XB Mei CW Tu and WSC Chang ldquoHigh efficiency 13 μm multiple quantum well electroabsorption waveguide modulator for microwave photonic linksrdquo Proceedings of the SPIE - The International Society for Optical Engineering (Vol 2844) Denver CO August 7-8 1996 pp 84-90

70 H H Liao XB Mei K K Loi C W Tu WSC Chang and PM Asbeck ldquoDesign of millimeter wave optical modulators with monolithically integrated narrow band impedance matching circuits for 13 mm photonic linksrdquo Proceedings of the SPIE - The International Society for Optical Engineering (Vol 2844) Denver CO August 7-8 1996 pp 97-107


30

71 CW Tu and WG Bi ldquoGrowth and characterization of (InGa)(NP) on GaPrdquo Compound Semiconductors 1996 Institute of Physics Conference Series(No 155) St Petersburg Russia September 23-27 1996 pp 213 -215

72 IA Buyanova WM Chen AV Buyanov B Monemar WG Bi and CW Tu ldquoOptical perturbation spectroscopy of modulation-doped InPInGaAs heterostructuresrdquo Proceedings of the Twenty-Third International Symposium on Compound Semiconductors St Petersburg Russia September 23-27 1996 pp 755-758

73 YM Hsin NY Li CW Tu and PM Asbeck ldquoIn-situ etch to improve chemical beam epitaxy regrown AlGaAsGaAs interfaces for HBT applicationsrdquo Control of Semiconductor Surfaces and Interface Symposium Materials Research Society Boston MA December 2-5 1996 pp 87-92

74 HH Liao XB Mei KK Loi CW Tu PM Asbeck and WSC Chang ldquoMicrowave structures for traveling-wave MQW electro-absorption modulators for wide band 13 μm photonic linksrdquo Proceedings of the SPIE - The International Society for Optical Engineering (Vol 3006) San Jose CA February 12-14 1997 pp 291-300

75 XB Mei KK Loi WSC Chang and CW Tu ldquoBenefits and limitations in barrier design in InAsPGaInP strain-balanced MQWs for improving the 13 μm waveguide modulator performancerdquo 1997 International Conference on Indium Phosphide and Related Materials Cape Cod MA May 11-15 1997 pp 436-4399

76 QZ Liu LS Yu KV Smith F Deng CW Tu PM Asbeck ET Yu and SS Lau ldquoMetal-GaN contact technologyrdquo Proceedings of the 2nd Symposium on III-V Nitride Materials and Processes Electrochemical Society Paris France August 31-September 5 1997 pp 11-23

77 BQ Shi and CW Tu ldquoSimulation of chemical beam epitaxy with triethylgallium and tris(dimethylamino) arsinerdquo Proceedings of the IEEE 24th International Symposium on Compound Semiconductors San Diego CA September 8-11 1997 pp143-146

78 KK Loi XB Mei JH Hondiak KN Cheng L Shen HH Wieder CW Tu and WSC Chang ldquoExperimental study of efficiency-bandwidth tradeoff of electroabsorption waveguide modulators for microwave photonic linksrdquo LEOS 97 10th Annual Meeting(Vol1) San Francisco CA November 10-13 1997 pp 142-143

79 CW Tu WG Bi HP Xin Y Ma JP Zhang LW Wang and ST Ho ldquoIII-N-V a novel material system for lasers with good high-temperature characteristicsrdquo Proceedings of the SPIE - The International Society for Optical Engineering (Vol 3284) San Jose CA January 26-28 1998 pp 190-196

80 HP Xin and CW Tu ldquoGaInNAs-GaAs multiple quantum wells at 13 microm wavelength grown by gas-source molecular beam epitaxyrdquo Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the 28th State-of-the-Art Program on Compound Semiconductors Electrochemical Society San Diego CA May 3-8 1998 pp 196-202

81 BQ Shi and CW Tu ldquoLaser-assisted chemical beam epitaxy of InP with trimethylindium and tertiarybutylphosphinerdquo Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the 28th State-of-the-Art Program on Compound Semiconductors Electrochemical Society San Diego CA May 3-8 1998 pp 366-376

82 XB Mei NY Li YP Zeng PF Chen RA Johnson PM Asbeck and CW Tu ldquoStrain-compensated p-channel InGaPInGaAs heterostructure field-effect transistorsrdquo Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the 28th State-of-the-Art Program on Compound Semiconductors Electrochemical Society San Diego CA May 3-8 1998 pp 450-454

83 XB Mei CW Tu and ED Jones ldquoEffects of thermal annealing on InAsPGaInP strain-compensated multiple quantum wellsrdquo Proceedings of the International Conference on Indium Phosphide and Related Materials (Japan Society of Applied Physics IEEE Lasers and Electro-Optics Society) Tsukuba Japan May 11-15 1998 pp552-555

84 A Ourmazd JE Cunningham DW Taylor JA Rentschler and CW Tu ldquoThe atomic structure of GaAsAlGaAs interfaces and its correlation with the optical properties of quantum wellsrdquo 15th


31

International Conference on Defects in Semiconductors Budapest Hungary August 22-26 1988 pp 689-693

85 CW Tu HP Xin and WG Bi ldquoIII-N-V a novel material system for optoelectronic applicationsrdquo Proceedings of the International Electron Devices amp Materials Symposium Tainan Taiwan December 20-23 1998 pp B4-1-P111 - B4-1-P115

86 BQ Shi and CW Tu ldquoLocalized doping enhancement by photon-assisted chemical beam epitaxyrdquo Epitaxial Growth-Principles and Applications Symposium Materials Research Society San Francisco CA April 5-8 1999 pp 291-296

87 CW Tu ldquoProperties and applications of a novel material system III-N-Vrdquo Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX) Electrochemical Society (Vol99-4) Seattle WA May 2-7 1999 pp 250-259

88 Yong Zhang A Mascarenhas SK Deb HP Xin and CW Tu ldquoHeavily nitrogen-doped III-V semiconductors for high-efficiency solar cellsrdquo Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000 Anchorage AK September 15-22 1999 pp1189-1192

89 CW Tu M Sopanen and HP Xin ldquoGaInNAsGaAs a novel material system for many applicationsrdquo Proceedings of the 35th Symposium on the State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXI) Electrochemical Society (Vol 99-17) Honolulu HI October 17-22 1999 pp1-7

90 AP Young LJ Brillson Y Naoi and CW Tu ldquoThe effect of nitrogen ion damage on the optical and electrical properties of MBE GaN grown on MOCVD GaNsapphire templatesrdquo GaN and Related Alloys Symposium Materials Research Society Boston MA November 28 ndash December 3 1999 ppW11561-6

91 W Shan W Walukiewicz KM Yu JW Ager III EE Haller JF Geisz DJ Friedman JM Olson SR Kurtz HP Xin and CW Tu ldquoEffect of nitrogen on the band structure of III-N-V alloysrdquo SPIE - Proceedings of the International Society for Optical Engineering (Vol 3944 Part 1-2) San Jose January 24-28 2000 pp 69-79

92 HP Xin Tu CW ldquoGas-source molecular beam epitaxy growth and characterization of GaNPGaP structuresrdquo Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films Materials Research Society (Vol 618) San Francisco CA April 24-27 2000 pp 279-284

93 YG Hong HP Xin and CW Tu ldquoImproving properties of GaInNAs with a short-period GaInAsGaNAs superlatticerdquo Proceedings of the International Conference on Indium Phosphides and Related Materials IEEE Electron Devices Society Williamsburg VA May 14-18 2000 pp 545-548

94 RJ Welty HP Xin K Mochizuki CW Tu and PM Asbeck ldquoDesign and characterization of GaAs-Gasub 089Insub 011Nsub 002Assub 098-GaAs NpN double heterojunction bipolar transistors with low turn-on voltagerdquo IEEE 58th Device Research Conference Digest Denver CO June 19-21 2000 pp 145-146

95 RJ Welty YG Hong HP Xin CW Tu PM Asbeck and K Mochizuki ldquoNitrogen incorporation in GaInP for novel heterojunction bipolar transistorsrdquo Proceedings of the IEEE Cornell Conference on High Performance Devices Ithaca NY August 7-9 2000 pp33-40

96 RJ Welty HP Xin K Mochizuki CW Tu and PM Asbeck ldquoDesign and characterization of GaAs-Gasub 089Insub 011Nsub 002Assub 098-GaAs NpN double heterojunction bipolar transistors with low turn-on voltagerdquo IEEE 58th Device Research Conference Digest Denver CO June 19-21 2000 pp145-146

97 Y Zhang A Mascarenhas SK Deb HP Xin and CW Tu ldquoHeavily nitrogen-doped III-V semiconductors for high-efficiency solar cellsrdquo Proceedings of the 28th IEEE Photovoltaic Specialists Conference Anchorage AK September 15-22 2000 pp1189-1192

98 CW Tu HP Xin M Sopanen and RJ Welty ldquoNovel optoelectronic materials GaInNAs and Ga(In)NPrdquo IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings (Vol 2) Rio Grande Puerto Rico November 13-16 2000 pp784-785


32

99 IA Buyanova WM Chen G Pozina PN Hai NQ Thinh EM Goldys HP Xin and CW Tu ldquoOptical and electronic properties of GaNAsGaAs structuresrdquo Conference on Optoelectronic and Microelectronic Materials and Devices (IEEE Cat No 00EX466) Bundoora Victoria Australia December 6-8 2000 pp 483-490

100 CW Tu YG Hong R Andre and HP Xin ldquoGaInNP a novel material for device applicationsrdquo III-Nitride Based Semiconductor Electronics and Optical Devices and the 34th State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) Electrochemical Society (Vol2001-1) Washington DC March 25-30 2001 pp187-192

101 CW Tu YG Hong R Andre and HP Xin ldquoGaInNP a novel material for electronic and optoelectronic applicationsrdquo International Conference Proceedings on Indium Phosphide and Related Materials Nara Japan May 14-18 2001 pp 591-594

102 IA Buyanova WM Chen EM Goldys HP Xin and CW Tu ldquoRaman studies of GaNP alloyrdquo GaN and Related Alloys Symposium Materials Research Society (Vol693) Boston MA January 26-30 2001 pp 303-308

103 WM Chen NQ Thinh IA Buyanova PN Hai HP Xin CW Tu Li Wei and M Pessa ldquoNature and formation of non-radiative defects in GaNAs and InGaAsNrdquo Progress in Semiconductor Materials for Optoelectronic Applications Symposium Materials Research Society (Vol692) Boston MA November 26-29 2001 pp 67-72

104 IA Buyanova GY Rudko WM Chen HP Xin and CW Tu ldquoOn the origin of light emission in GaNxP1-xrdquo Materials and Devices for Optoelectronics and Microphotonics Materials Research Society (Vol722) San Francisco CA April 1-5 2002 pp 135-140

105 CW Tu ldquoLow-bandgap nitrides Issues and applicationsrdquo 12th International Conference on Semiconducting and Insulating Materials Bratislava Slovak Republic June 30 - July 5 2002 pp 251-257

106 K Min-Ho FS Juang YG Hong CW Tu and P Seong-Ju ldquoSingle-crystal zinclende GaN growth on GaP(100) substrate in molecular beam epitaxyrdquo 12th International Conference on Molecular Beam Epitaxy San Francisco CA September 15-20 2002 pp 207-208

107 FS Juang YG Hong MH Kim B Simpkins CW Tu J Tsai and WC Lai ldquoStrong blue emission from isoelectronically P-doped GaN epilayers grown by gas source molecular beam epitaxyrdquo 12th International Conference on Molecular Beam Epitaxy San Francisco CA September 15-20 2002 pp 211-212

108 AY Egorov VA Odnobludov AE Zhukov AF Tsatsulrsquonikov NV Krizhanovskaya VM Ustinov YG Hong and CW Tu ldquoValence band structure of GaAsN compounds and band-edge line-up in GaAsGaAsNInGaAs Heterostructuresrdquo 12th International Conference on Molecular Beam Epitaxy San Francisco CA September 15-20 2002 pp 269-270

109 YG Hong FS Juang MH Kim and CW Tu ldquoGrowth and characterization of GaInNP grown on GaAs substratesrdquo 12th International Conference on Molecular Beam Epitaxy San Francisco CA September 15-20 2002 pp 299-300

110 XD Luo CL Yang JS Huang ZY Xu J Liu WK Ge Y Zhang A Mascarenhas HP Xin and C W Tu ldquoOptical study of electronic states in GaAsNrdquo Conference on Optoelectronic and Microelectronic Materials and Devices Sydney NSW Australia December 11-13 2002 pp 587-590

111 A Nishikawa YG Hong and CW Tu ldquoExtension of emission wavelength of GaInNAs QDs grown on GaAs (001)rdquo International Proceedings of the International Conference on Indium Phosphides and Related Materials Santa Barbara CA May 12-16 2003 pp 359-360

112 A Nishikawa YG Hong and CW Tu ldquoEffects of thermal annealing on Ga03In07N xAs1-x QDs grown on GaAs (001)rdquo International Symposium on Compound Semiconductors Post-Conference Proceedings (IEEE Cat No03TH8767) San Diego CA August 25-27 2003 pp 55-60


33

113 ZY Xu XD Luo XD Yang PH Tan CL Yang WK Ge Y Zhang A Mascarenhas HP Xin and CW Tu ldquoOptical study of localized and delocalized states in GaAsNGaAsrdquo GaN and Related Alloys Symposium Materials Research Society (Vol 798) Boston MA December 1-5 2003 pp 695-700

114 CW Tu Y G Hong R Andre RJ Welty and PM Asbeck ldquoBandgap engineering of GaInNP on GaAs(001) for electronic applicationsrdquo 16th International Proceedings of the International Conference on Indium Phosphides and Related Materials IEEE Lasers and Electro-Optics Society (Cat No04CH37589) Kagoshima Japan May 31-June 4 2004 pp 631-635

115 NQ Thinh I Vorona IA Buyanova WM Chen YG Hong CW Tu S Limpijunmong and SB Zhang ldquoGa-interstitial related defects in Ga(Al)NPrdquo Physics of Semiconductors 27th International Conference on the Physics of Semiconductors American Institute of Physics Conference Proceedings (No772 Part 1) Flagstaff AZ July 26-30 2004 pp 259-260

116 M Felici A Polimeni M Capizzi SV Dudiy A Zunger IA Buyanova W M Chen H P Xin and CW Tu ldquoHigh energy optical transitions in Ga(PN) contribution from perturbed valence bandrdquo Physics of Semiconductors 27th International Conference on the Physics of Semiconductors American Institute of Physics Conference Proceedings (No772 Part 1) Flagstaff AZ July 26-30 2004 pp 265-266

117 IA Buyanova WM Chen and CW Tu ldquoNew insight into the electronic properties of GaNP alloysrdquo Physics of Semiconductors 27th International Conference on the Physics of Semiconductors American Institute of Physics Conference Proceedings (No772 Part 1) Flagstaff AZ July 26-30 2004 pp 271-274

118 CJ Pan CW Tu JJ Song G Cantwell CC Lee BJ Pong and GC Chi ldquoOptical properties of homoepitaxial and heteroepitaxial ZnO grown by molecular beam epitaxyrdquo Proceedings of the SPIE - The International Society for Optical Engineering (Vol 5722 No1) San Jose CA January 24 2005 pp 410-416

IV Patents 1 Shallow Impurity Neutralization United States Patent No 4610731 JP Chevallier WC Dautremont-Smith

and CW Tu September 9 1986

2 Gaseous Etching Process United States Patent No 4689115 DE Ibbotson and CW Tu August 15 1987

3 Method of Fabricating Single-Crystal Films of Cubic Goup II Fluorides on Semiconductor Compounds by Molecular Beam Epitaxy United States Patent No 4870032 WD Johnston Jr and CW Tu September 26 1989

4 HBT With Nitrogen-Containing Current Blocking Base Collector Interface and Method for Current Blocking United States Patent No 6674 103 CW Tu PM Asbeck K Mochizuki and R Welty January 6 2004


研究領域 III-V 族半導體化合物異質體氣態源分子束磊金電子元件光電元件學術學會電機及電子學工程師學會(IEEE)會士美國物理學會會士美國 AVS 科技學會會士文獻 gt385 篇學報論文 gt8500 引用 (201191) gt110 科學會議論文 5 本書的章文 9 本科學會議論文的主編 4 項專利專業事項 2006-迄今國立中山大學南台灣光電卓越研究中心計畫諮詢委員

2003-迄今電機及電子學工程師學會(IEEE)聖地牙哥分會學生活動連絡人

諮詢委員會會員

北美分子束磊晶會議 1990-迄今會長 2001-迄今

美國真空會議電子材料及制造組 1980-91 2004-06 電子材料會議 1991-1997 2000-06 2008-迄今

會議主席

北美分子束磊晶會議 2011 國際分子束磊晶會議 2008 美國材料研究學會會議 1989 1992 1994 國際化學束磊晶會議 1993 1995 會議組織委員會會員國際分子束磊晶會議 1990 會議節目委員會會員國際分子束磊晶會議 1992 1996 1998 2000 國際磷化銦會議 1994 1997-2002 國際化合物半導體會議 2994 1997 2000-01 2004-05 國際化學束磊晶會議 1997 1999
















Technology Society











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Technology Society











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Documents

杜武青 Charles W. Tu 工作單位: 加州大學聖地牙哥分校 Jacobs 工程